CN109473282A - A kind of patch type capacitor and preparation method thereof - Google Patents
A kind of patch type capacitor and preparation method thereof Download PDFInfo
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- CN109473282A CN109473282A CN201811613733.7A CN201811613733A CN109473282A CN 109473282 A CN109473282 A CN 109473282A CN 201811613733 A CN201811613733 A CN 201811613733A CN 109473282 A CN109473282 A CN 109473282A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 120
- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 116
- 229910052751 metal Inorganic materials 0.000 claims abstract description 116
- 238000010276 construction Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 229910017107 AlOx Inorganic materials 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 5
- 229910003070 TaOx Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses a kind of patch type capacitors and preparation method thereof, patch type capacitor includes stepped construction, stepped construction includes that spaced insulating layer and metal layer, the patterned metal structures in adjacent metal form the first electrode and second electrode of patch type capacitor in the stacking direction；Second electrode includes the first sub-electrode and second sub electrode, and the patterned metal structures for constituting the first sub-electrode and the patterned metal structures for constituting second sub electrode are located at same metal layer；In the stacking direction, the upright projection of first electrode exists with the upright projection of the first sub-electrode and the upright projection of second sub electrode and partly overlaps.According to the technical solution of the present invention, the resistance to pressure for improving patch type capacitor is conducive to the precision for improving patch type capacitor while being advantageously implemented the miniaturization of patch type capacitor, it is also beneficial to reduce the equivalent series resistance of patch type capacitor simultaneously, improves the Q value of patch type capacitor.
Description
Technical field
The present embodiments relate to electronic component technology fields more particularly to a kind of patch type capacitor and preparation method thereof.
Background technique
As the integrated level of the raising that user requires miniaturization of electronic products, electronic product is gradually increased, this is just to electricity
More stringent requirements are proposed for the size of electronic component included in sub- product, and how electronic component takes into account miniaturization and electronics
The electric property of element itself becomes urgent problem to be solved.
Patch type capacitor is commonly utilized in each electronic product, and the size and electric property of patch type capacitor directly affect collection
At the size and performance of the electronic product for having patch type capacitor, this allows for how patch type capacitor takes into account miniaturization and height is resistance to
The electrology characteristic of pressure becomes most important problem.
Summary of the invention
In view of this, the present invention provides a kind of patch type capacitor and preparation method thereof, the pressure resistance of patch type capacitor is improved
Property, while being advantageously implemented the miniaturization of patch type capacitor, be conducive to the size for accurately controlling patch type capacitor, improve patch
The precision of formula capacitor, while being also beneficial to reduce the resistance of patch type capacitor, improve the Q value of patch type capacitor.
In a first aspect, the embodiment of the invention provides a kind of patch type capacitor, patch type capacitor includes:
Stepped construction, the stepped construction include spaced insulating layer and metal layer in the stacking direction, are located at adjacent
Patterned metal structures in the metal layer form the first electrode and second electrode of the patch type capacitor；
The second electrode includes the first sub-electrode and second sub electrode, constitutes the pattern metal of first sub-electrode
Structure and the patterned metal structures for constituting the second sub electrode are located at the same metal layer；Along the stacking direction, institute
Upright projection and the upright projection of first sub-electrode and the upright projection of the second sub electrode for stating first electrode are equal
In the presence of partly overlapping.
Further, along the stacking direction, the thickness of the insulating layer is less than the thickness of the metal layer.
Further, along the stacking direction, the patch type capacitor further includes being located at the second electrode far from described
The pin layer of first electrode side, the pin layer are provided with the first pin and second pin, first sub-electrode with it is described
The electrical connection of first pin, the second sub electrode are electrically connected with the second pin.
It further, include at least one layer of insulating layer between the pin layer and the second electrode, the first son electricity
Pole is electrically connected by the via structure between the pin layer and the second electrode in insulating layer with first pin, described
Second sub electrode passes through the via structure and second pin electricity between the pin layer and the second electrode in insulating layer
Connection.
Further, first pin includes the first pad structure and the first figure on first pad structure
Case metal structure, first sub-electrode are electrically connected with first patterned metal structures；
The second pin includes the second pad structure and the second pattern metal on second pad structure
Structure, the second sub electrode are electrically connected with second patterned metal structures.
Further, the first electrode is whole face electrode, and first sub-electrode and the second sub electrode are bulk
Electrode.
Further, the material for constituting the insulating layer includes SiNx、AlOxAnd TaOxAt least one of.
Second aspect, the embodiment of the invention also provides a kind of production methods of patch type capacitor, for making first party
The patch type capacitor in face, the production method of patch capacitor include:
Form substrate；
The patterned metal structures for constituting first electrode are formed over the substrate；
The first insulating layer is formed on the patterned metal structures for constituting the first electrode；
The patterned metal structures for constituting the second electrode are formed on the first insulating layer.
Further, in the stacking direction, the patch type capacitor further includes being located at the second electrode far from described first
The pin layer of electrode side, the pin layer are provided with the first pin and second pin；
It is formed after the patterned metal structures for constituting the second electrode on the first insulating layer, further includes:
Second insulating layer is formed on the patterned metal structures for constituting the second electrode and in the second insulating layer
Setting position on form via structure；
First pin and the second pin are formed on the second insulating layer, and the first sub-electrode is by being located at institute
The correspondence via structure stated in second insulating layer is electrically connected with first pin, and second sub electrode is by being located at described second absolutely
Correspondence via structure in edge layer is electrically connected with the second pin.
Further, it is formed on the second insulating layer after first pin and the second pin, further includes:
Remove the substrate or the grinding substrate.
The embodiment of the invention provides a kind of patch type capacitors and preparation method thereof, and it includes stacking knot that patch type capacitor, which is arranged,
Structure, stepped construction is including spaced insulating layer and metal layer in the stacking direction, the patterned gold in adjacent metal
Belong to first electrode and second electrode that structure forms patch type capacitor, setting second electrode includes the first sub-electrode and the second son electricity
Pole, the patterned metal structures for constituting the first sub-electrode and the patterned metal structures for constituting second sub electrode are located at same metal
Layer, in the stacking direction, the vertical throwing of the upright projection of first electrode and the upright projection of the first sub-electrode and second sub electrode
Shadow, which exists, to partly overlap, i.e. first electrode and the first sub-electrode and second sub electrode has a face part, first electrode with
First sub-electrode and first electrode and second sub electrode are respectively formed capacitance structure, by the way that second electrode is divided into the first sub-electrode
And second sub electrode, the resistance to pressure of patch type capacitor is improved, and patch type capacitor can be made using semiconductor technology,
While being advantageously implemented the miniaturization of patch type capacitor, is conducive to the size for accurately controlling patch type capacitor, improves patch type electricity
The precision of appearance, while being also beneficial to reduce the resistance of patch type capacitor, improve the Q value of patch type capacitor.
Detailed description of the invention
By reading a detailed description of non-restrictive embodiments in the light of the attached drawings below, the application's is other
Feature, objects and advantages will become more apparent upon:
Fig. 1 is a kind of schematic perspective view of patch type capacitor provided in an embodiment of the present invention；
Fig. 2 is a kind of the schematic diagram of the section structure of patch type capacitor provided in an embodiment of the present invention；
Fig. 3 is a kind of flow diagram of the production method of patch type capacitor provided in an embodiment of the present invention.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.It is same or similar in this specification
Drawing reference numeral represent the same or similar structure, element or process.It should be noted that in the absence of conflict, this Shen
Please in embodiment and embodiment in feature can be combined with each other.
The embodiment of the invention provides a kind of patch type capacitor, patch type capacitor includes stepped construction, and stepped construction includes
Spaced insulating layer and metal layer in the stacking direction, the patterned metal structures in adjacent metal form patch type
The first electrode and second electrode of capacitor.Second electrode includes the first sub-electrode and second sub electrode, constitutes the first sub-electrode
Patterned metal structures and the patterned metal structures for constituting second sub electrode are located at same metal layer.In the stacking direction, first
The upright projection of electrode exists with the upright projection of the first sub-electrode and the upright projection of second sub electrode to partly overlap.
As the integrated level of the raising that user requires miniaturization of electronic products, electronic product is gradually increased, this is just to electricity
More stringent requirements are proposed for the size of electronic component included in sub- product, and how electronic component takes into account miniaturization and electronics
The electric property of element itself becomes urgent problem to be solved.Patch type capacitor is commonly utilized in each electronic product, patch type
The size and electric property of capacitor directly affect the size and performance for being integrated with the electronic product of patch type capacitor, this allows for pasting
How sheet capacitor, which takes into account miniaturization and the electrology characteristic of high voltage, becomes most important problem.
Patch type capacitor provided in an embodiment of the present invention includes stepped construction, and stepped construction includes being spaced to set in the stacking direction
The insulating layer and metal layer set, patterned metal structures in adjacent metal formed patch type capacitor first electrode and
Second electrode, setting second electrode include the first sub-electrode and second sub electrode, constitute the pattern metal knot of the first sub-electrode
Structure and the patterned metal structures for constituting second sub electrode are located at same metal layer, in the stacking direction, the vertical throwing of first electrode
The upright projection of shadow and the first sub-electrode and the upright projection of second sub electrode, which exist, to partly overlap, i.e. first electrode and the
There is face part, first electrode and the first sub-electrode and first electrode and the second son electricity in one sub-electrode and second sub electrode
Pole is respectively formed capacitance structure, by the way that second electrode is divided into the first sub-electrode and second sub electrode, improves patch type capacitor
Resistance to pressure, and patch type capacitor can be made using semiconductor technology, be advantageously implemented the same of patch type capacitor miniaturization
When, be conducive to the size for accurately controlling patch type capacitor, improve the precision of patch type capacitor, reduces the equivalent series electricity of capacitor
Resistance improves the Q value of patch type capacitor.
It is core of the invention thought above, following will be combined with the drawings in the embodiments of the present invention, to the embodiment of the present invention
In technical solution be clearly and completely described.Based on the embodiments of the present invention, those of ordinary skill in the art are not having
Under the premise of making creative work, every other embodiment obtained be shall fall within the protection scope of the present invention.
Fig. 1 is a kind of schematic perspective view of patch type capacitor provided in an embodiment of the present invention, and Fig. 2 is that the present invention is implemented
A kind of the schematic diagram of the section structure for patch type capacitor that example provides.Patch type capacitor includes stepped construction, layer combined with Figure 1 and Figure 2,
Stack structure includes the spaced insulating layer 1 of XX ' and metal layer 2 in the stacking direction, and insulating layer is not shown in Fig. 1, is located at adjacent
Patterned metal structures in metal layer 2 form the first electrode 3 and second electrode 4 of patch type capacitor, and the first electricity is arranged here
Pole 3 is located in metal layer 21, and second electrode 4 is located in metal layer 22.Second electrode 4 includes the first sub-electrode 41 and the second son electricity
Pole 42, the patterned metal structures for constituting the first sub-electrode 41 and the patterned metal structures for constituting second sub electrode 42 are located at same
One metal layer 22.
Along the stacking direction XX ' of stepped construction, the upright projection of the upright projection of first electrode 3 and the first sub-electrode 41 with
And the upright projection of second sub electrode 42 exists and partly overlaps, i.e., along the stacking direction XX ' of stepped construction, first electrode 3 with
There is face in the second sub electrode 42 in the first sub-electrode 41 and first electrode 3 and second electrode 4 in second electrode 4
The first sub-electrode 41 in part, first electrode 3 and second electrode 4 forms a capacitance structure, first electrode 3 and second electrode 4
In second sub electrode 42 form another capacitance structure.
Illustratively, it is whole face electrode, the first sub-electrode 41 and second that first electrode 3 can be set combined with Figure 1 and Figure 2,
Sub-electrode 42 is block type electrode.It should be noted that the embodiment of the present invention is to first electrode 3, the first sub-electrode 41 and second
The concrete shape of sub-electrode 42 is not construed as limiting, it is ensured that along the stacking direction XX ' of stepped construction, first electrode 3 and the first sub-electrode
41 and second sub electrode 42 exist face setting part.
Illustratively, can be set and constitute the material of insulating layer 1 includes SiNx、AlOxAnd TaOxAt least one of.In conjunction with
Fig. 1 and Fig. 2, the insulating layer 1 between metal layer 21 and metal layer 22 play insulating effect, realize metal layer 21 and metal layer
22 electrical isolation, so realize patch type capacitor in being electrically insulated between first electrode 3 and second electrode 4, i.e., first electrode 3 with
Between second sub electrode 42 between the first sub-electrode 41 in second electrode 4 and in first electrode 3 and second electrode 4
Electrical isolation, while insulating layer 1 serves as the dielectric layer between patch type capacitor first electrode 3 and second electrode 4, that is, serves as the first electricity
Second in capacitance structure and first electrode 3 and second electrode 4 that the first sub-electrode 41 in pole 3 and second electrode 4 is formed
The dielectric layer for the capacitance structure that sub-electrode 42 is formed.
Specifically, setting second electrode 4 includes the first sub-electrode 41 and second sub electrode 42 combined with Figure 1 and Figure 2, so that
First electrode 3 and second electrode 4 form series capacitance structure, i.e. 41 shape of the first sub-electrode in first electrode 3 and second electrode 4
At capacitance structure, with first electrode 3 in second electrode 4 second sub electrode 42 formed capacitance structure connect, relative to
The capacitor that two whole face electrodes are constituted only includes one dielectric layer supply breakdown, first electrode 3 and the first sub-electrode 41 and second
The series capacitance structure that sub-electrode 42 is formed includes the supply breakdown of two layers of dielectric layer, is conducive to do not changing patch type capacitor in this way
Under the premise of volume, the resistance to pressure of patch type capacitor is promoted.
In addition, the patch type capacitor generallyd use at present be MLCC (Muiti-layer Ceramic Capacitiors,
Chip multilayer ceramic capacitor), use multi-layer ceramics material to be sintered, manufacture craft is rougher, is unable to accurately control patch
The size of sheet capacitor, patch type capacitance accuracy and Q value are lower, and the miniaturization of patch type capacitor difficult to realize.The present invention is real
It applies example and forms patch type capacitor using the spaced insulating layer 1 of XX ' in the stacking direction and metal layer 2, in metal layer 2
Patterned metal structures form the first electrode 3 in patch type capacitor, the first sub-electrode 41 and the second electricity in second electrode 4
Patch type capacitor can be made using semiconductor technology in second sub electrode 42 in pole 4, and being advantageously implemented, patch type capacitor is small
While type, is conducive to the size for accurately controlling patch type capacitor, improves the precision of patch type capacitor, reduce the equivalent of capacitor
Series resistance improves the Q value of patch type capacitor.
Optionally, combined with Figure 1 and Figure 2, along the stacking direction XX ' of stepped construction, the thickness that insulating layer 1 can be set is less than
The thickness of metal layer 2, it can the thickness for the insulating layer 1 being arranged between metal layer 21 and metal layer 22 is less than metal layer 21
And the thickness of metal layer 22, i.e., the thickness of the dielectric layer in setting patch type capacitor is less than in first electrode 3, second electrode 4
The thickness of first sub-electrode 41 and second sub electrode 42 is conducive to the capacitance density for improving patch type capacitor, in unit area
It is interior to obtain bigger capacitor, while being conducive to further increase the Q value of patch type capacitor.
Optionally, XX ', patch type capacitor can also include being located at second electrode 4 far in the stacking direction combined with Figure 1 and Figure 2,
Pin layer 5 from 3 side of first electrode, pin layer 5 are provided with the first pin 51 and second pin 52, the first sub-electrode 41 and
The electrical connection of one pin 51, second sub electrode 42 are electrically connected with second pin 52.Specifically, the first son electricity of patch type capacitor is set
Pole 41 is electrically connected with the first pin 51, and second sub electrode 42 is electrically connected with second pin 52, the first pin 51 and second pin 52
As two endpoints that patch type capacitor is electrically connected with other electron component, so that forming first electrode 3 inside patch type capacitor
The capacitance structure formed with the first sub-electrode 41, with the pass of connecting for the capacitance structure that first electrode 3 and second sub electrode 42 are formed
System.
Optionally, can be set combined with Figure 1 and Figure 2, between pin layer 5 and second electrode 4 includes at least one layer of insulating layer,
It includes a layer insulating 6 between pin layer 5 and second electrode 4 that Fig. 2, which is illustratively arranged, and the first sub-electrode 41 passes through pin layer 5
The via structure 61 in insulating layer 1 between second electrode 4 is electrically connected with the realization of the first pin 51, and second sub electrode 42 passes through
The via structure 62 in insulating layer 6 between pin layer 5 and second electrode 4 is electrically connected with the realization of second pin 52.Specifically, draw
Insulating layer 6 between foot layer 5 and second electrode 4 is for realizing the first sub-electrode 41 and the first pin 51 without electrical connections
Electrical isolation, and realize that second sub electrode 42 is not necessarily to being electrically insulated for electrical connections with second pin 52.
Optionally, the first pin 51 can be set combined with Figure 1 and Figure 2, to include the first pad structure 511 and weld positioned at first
The first patterned metal structures 512 in dish structure 511, the first sub-electrode 41 are electrically connected with the first patterned metal structures 512.
Second pin 52 includes the second pad structure 521 and the second patterned metal structures 522 on the second pad structure 521,
Second sub electrode 42 is electrically connected with the second patterned metal structures 522.Specifically, the first sub-electrode 41 and the first pattern metal
The electrical connection of structure 512 is to realize being electrically connected for the first sub-electrode 41 and the first pin 51, second sub electrode 42 and the second pattern
Change the electrical connection of metal structure 522 to realize being electrically connected for second sub electrode 42 and second pin 52.Illustratively, first is constituted
The material of pad structure 511 and the second pad structure 521 can be scolding tin, on a printed circuit convenient for patch type capacitor
Welding can be set 512 material of the first patterned metal structures constituted in the first pin 51 and constitute in second pin 52
The second patterned metal structures 522 with constitute stepped construction in the material of each metal layer 2 it is identical.
It should be noted that the embodiment of the present invention is to the material for constituting metal layer 2 in stepped construction, i.e. composition first electrode
3, the first sub-electrode 41 and the material of second sub electrode 42 are not construed as limiting, preferably conductivity high metal material or metal oxide
Material, to improve the Q value of patch type capacitor to the full extent.
The embodiment of the invention also provides a kind of production methods of patch type capacitor, for making the patch of above-described embodiment
Formula capacitor, Fig. 3 are a kind of flow diagram of the production method of patch type capacitor provided in an embodiment of the present invention.As shown in figure 3,
The production method of patch type capacitor includes:
S110, substrate is formed.
Specifically, substrate is formed, which can be the crystalline substance of 8 cun of wafers, 12 cun of wafers or 500mm x 500mm size
The larger sized wafers such as circle, the shape of substrate can be circle, square, rectangle etc., constitute substrate material can be silicon,
One or more of glass, quartz, ceramics or organic matter.
S120, the patterned metal structures for constituting first electrode are formed on the substrate.
Specifically, it is formed on substrate (substrate is not shown in Fig. 1 and Fig. 2) combined with Figure 1 and Figure 2, and constitutes first electrode 3
Patterned metal structures, can use plating perhaps sputtering technology or first pass through physically or chemically vapor deposition the methods of first
One layer of metal layer 21 is deposited, then technique is patterned to the metal layer 21 of formation, is formed for example, by using etching technics and constitutes first
The patterned metal structures of electrode 3.It is preferred that the patterned metal structures for constituting first electrode 3 are formed using electroplating technology, plating
Technique can form the biggish metallic diaphragm of thickness, be conducive to the Q value for improving patch type capacitor.
S130, the first insulating layer is formed on the patterned metal structures for constituting first electrode.
Specifically, the first insulating layer 1 is formed on the patterned metal structures for constituting first electrode 3 combined with Figure 1 and Figure 2,.
Illustratively, can be set and constitute the material of the first insulating layer 1 includes SiNx、AlOxAnd TaOxAt least one of, when constituting the
The material of one insulating layer 1 is SiNxWhen, the first insulating layer 1 can be formed using chemical vapor deposition process, such as can use
Plasma reinforced chemical vapour deposition method makes to form the first insulating layer 1, and plasma reinforced chemical vapour deposition needs heavy
Accumulated temperature degree is lower, smaller to the structure and impact on physical properties of film layer, and the thicknesses of layers and homogeneity of ingredients of formation are preferable, and
Film layer is finer and close, and adhesive force is strong.When the material for constituting the first insulating layer 1 is AlOxOr TaOxWhen, can using atomic layer deposition or
Metallo-Organic Chemical Vapor depositing operation forms the first insulating layer 1.
Illustratively, since the first sub-electrode 41 and second sub electrode 42 are by carrying out Patternized technique to second electrode 4
It is formed, accordingly it is also possible to make the first insulating layer 1 form corresponding figure according to the shape of the first sub-electrode 41 and second sub electrode 42
Case structure, it is ensured that the first insulating layer 1 can play insulating effect, to realize between first electrode 3 and the first sub-electrode 41, with
And being electrically insulated between first electrode 3 and second sub electrode 42.
S140, the patterned metal structures for constituting second electrode are formed on the first insulating layer.
Specifically, it equally can use plating combined with Figure 1 and Figure 2, and perhaps sputtering technology or first pass through physically or chemically
The methods of vapor deposition first deposits one layer of metal layer 22, then is patterned technique to the metal layer 22 of formation, for example, by using etching
Technique forms the patterned metal structures for constituting second electrode 4, to form the first sub-electrode 41 and second sub electrode 42.Equally
, it is preferred to use electroplating technology forms the patterned metal structures for constituting second electrode 4, and it is biggish that electroplating technology can form thickness
Metallic diaphragm is conducive to the Q value for improving patch type capacitor.
Optionally, XX ' in the stacking direction combined with Figure 1 and Figure 2, patch type capacitor further include being located at second electrode 4 far from the
The pin layer 5 of one electrode, 3 side, pin layer 5 are provided with the first pin 51 and second pin 52.It is formed on the first insulating layer 1
After the patterned metal structures for constituting second electrode 4, the production method of patch type capacitor can also be included in the second electricity of composition
Second insulating layer 6 is formed on the patterned metal structures of pole 4 and forms via structure on the setting position of second insulating layer 6,
The first pin 51 and second pin 52 are formed in second insulating layer 6.Specifically, the first sub-electrode 41 is by being located at the second insulation
Correspondence via structure 61 in layer 6 is electrically connected with the first pin 51, and second sub electrode 42 passes through pair in second insulating layer 6
Via structure 62 is answered to be electrically connected with second pin 52.Illustratively, the first pin 51 and second is formed in second insulating layer 6
When pin 52, corresponding via structure in the material filling second insulating layer 6 of the first pin 51 and second pin 52 is constituted, the
One sub-electrode 41 is electrically connected by the correspondence via structure 61 being located in second insulating layer 6 with the first pin 51, second sub electrode
The 42 correspondence via structure 62 by being located in second insulating layer 6 is electrically connected with second pin 52.
Illustratively, the first pin 51 including the first pad structure 511 and is located at the first pad structure combined with Figure 1 and Figure 2,
The first patterned metal structures 512 on 511, second pin 52 is including the second pad structure 521 and is located at the second pad structure
The second patterned metal structures 522 on 521, can be initially formed 512 He of the first patterned metal structures in second insulating layer 6
Second patterned metal structures 522, the then shape on the first patterned metal structures 512 and the second patterned metal structures 522
At corresponding pad structure, metal structure in the first pin 51 and second pin 52 and corresponding pad structure can be set
Shape is consistent, and the two realizes patterning to simplify manufacturing process simultaneously.
Optionally, it is formed after the first pin 51 and second pin 52, substrate can be removed or ground in second insulating layer 6
Mill lining bottom, i.e. removing, which are located at the substrate above the patterned metal structures for constituting first electrode 3 or grind to be located at, constitutes the first electricity
Substrate above the patterned metal structures of pole 3 is to form complete patch type capacitor.After removal substrate or grinding substrate,
The surface mounting component size for forming standard, such as 0201,01005 or smaller size of can be cut to metal layer 2 and insulating layer 1
Surface mounting component.
Patch type capacitor provided in an embodiment of the present invention includes stepped construction, and stepped construction includes being spaced to set in the stacking direction
The insulating layer and metal layer set, patterned metal structures in adjacent metal formed patch type capacitor first electrode and
Second electrode, setting second electrode include the first sub-electrode and second sub electrode, constitute the pattern metal knot of the first sub-electrode
Structure and the patterned metal structures for constituting second sub electrode are located at same metal layer, in the stacking direction, the vertical throwing of first electrode
The upright projection of shadow and the first sub-electrode and the upright projection of second sub electrode, which exist, to partly overlap, i.e. first electrode and the
There is face part, first electrode and the first sub-electrode and first electrode and the second son electricity in one sub-electrode and second sub electrode
Pole is respectively formed capacitance structure, by the way that second electrode is divided into the first sub-electrode and second sub electrode, improves patch type capacitor
Resistance to pressure；On the other hand patch type capacitor is made using semiconductor technology, is being advantageously implemented the miniaturization of patch type capacitor
Meanwhile being conducive to the size for accurately controlling patch type capacitor, the precision of patch type capacitor is improved, and can reduce the equivalent of capacitor
Series resistance improves the Q value of patch type capacitor.
Note that the above is only a better embodiment of the present invention and the applied technical principle.It will be appreciated by those skilled in the art that
The present invention is not limited to specific embodiments here, be able to carry out for a person skilled in the art it is various it is apparent variation, again
Adjustment and substitution are without departing from protection scope of the present invention.Therefore, although by above embodiments to the present invention carried out compared with
For detailed description, but the present invention is not limited to the above embodiments only, without departing from the inventive concept, can be with
Including more other equivalent embodiments, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. a kind of patch type capacitor characterized by comprising
Stepped construction, the stepped construction include spaced insulating layer and metal layer in the stacking direction, are located at adjacent described
Patterned metal structures in metal layer form the first electrode and second electrode of the patch type capacitor；
The second electrode includes the first sub-electrode and second sub electrode, constitutes the patterned metal structures of first sub-electrode
It is located at the same metal layer with the patterned metal structures for constituting the second sub electrode；Along the stacking direction, described
The upright projection of one electrode exists with the upright projection of first sub-electrode and the upright projection of the second sub electrode
It partly overlaps.
2. patch type capacitor according to claim 1, which is characterized in that along the stacking direction, the thickness of the insulating layer
Degree is less than the thickness of the metal layer.
3. patch type capacitor according to claim 1, which is characterized in that along the stacking direction, the patch type capacitor
Further include be located at pin layer of the second electrode far from the first electrode side, the pin layer be provided with the first pin and
Second pin, first sub-electrode are electrically connected with first pin, and the second sub electrode is electrically connected with the second pin
It connects.
4. patch type capacitor according to claim 3, which is characterized in that wrapped between the pin layer and the second electrode
At least one layer of insulating layer is included, first sub-electrode passes through the via hole between the pin layer and the second electrode in insulating layer
Structure is electrically connected with first pin, and the second sub electrode passes through insulating layer between the pin layer and the second electrode
In via structure be electrically connected with the second pin.
5. patch type capacitor according to claim 3 or 4, which is characterized in that first pin includes the first pad knot
Structure and the first patterned metal structures on first pad structure, first sub-electrode and first patterning
Metal structure electrical connection；
The second pin includes the second pad structure and the second patterned metal structures on second pad structure,
The second sub electrode is electrically connected with second patterned metal structures.
6. patch type capacitor according to claim 1, which is characterized in that the first electrode is whole face electrode, described the
One sub-electrode and the second sub electrode are block type electrode.
7. patch type capacitor according to claim 1, which is characterized in that the material for constituting the insulating layer includes SiNx、
AlOxAnd TaOxAt least one of.
8. a kind of production method of patch type capacitor, special for making the described in any item patch type capacitors of claim 1-7
Sign is that the production method includes:
Form substrate；
The patterned metal structures for constituting first electrode are formed over the substrate；
The first insulating layer is formed on the patterned metal structures for constituting the first electrode；
The patterned metal structures for constituting the second electrode are formed on the first insulating layer.
9. the production method of patch type capacitor according to claim 8, which is characterized in that in the stacking direction, the patch
Formula capacitor further includes being located at pin layer of the second electrode far from the first electrode side, and the pin layer is provided with first
Pin and second pin；
It is formed after the patterned metal structures for constituting the second electrode on the first insulating layer, further includes:
Second insulating layer and setting in the second insulating layer are formed on the patterned metal structures for constituting the second electrode
Formation via structure is set in positioning；
Form first pin and the second pin on the second insulating layer, the first sub-electrode is by being located at described the
Correspondence via structure in two insulating layers is electrically connected with first pin, and second sub electrode is by being located at the second insulating layer
In correspondence via structure be electrically connected with the second pin.
10. the production method of patch type capacitor according to claim 9, which is characterized in that on the second insulating layer
It is formed after first pin and the second pin, further includes:
Remove the substrate or the grinding substrate.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811613733.7A CN109473282A (en) | 2018-12-27 | 2018-12-27 | A kind of patch type capacitor and preparation method thereof |
| PCT/CN2019/094160 WO2020133998A1 (en) | 2018-12-27 | 2019-07-01 | Patch capacitor and manufacturing method therefor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811613733.7A CN109473282A (en) | 2018-12-27 | 2018-12-27 | A kind of patch type capacitor and preparation method thereof |
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