CN109450393A - A kind of single chip integrated double-frequency radio-frequency power amplifier - Google Patents
A kind of single chip integrated double-frequency radio-frequency power amplifier Download PDFInfo
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- CN109450393A CN109450393A CN201811077922.7A CN201811077922A CN109450393A CN 109450393 A CN109450393 A CN 109450393A CN 201811077922 A CN201811077922 A CN 201811077922A CN 109450393 A CN109450393 A CN 109450393A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The invention discloses a kind of single chip integrated double-frequency radio-frequency power amplifiers, input terminal transformer is connected between first via first order Power Amplifier Unit module input and the second tunnel first order Power Amplifier Unit module input, output end transformer is connected between first via second level Power Amplifier Unit module output end and the second tunnel second level Power Amplifier Unit module output end, first via interstage transformer is connected between first via first order Power Amplifier Unit module output end and first via second level Power Amplifier Unit module input, No. second interstage transformer is connected between second tunnel first order Power Amplifier Unit module output end and the second tunnel second level Power Amplifier Unit module input.The present invention guarantees the optimal of each frequency range performance, goes back while supporting the work of two frequency ranges in the work for guaranteeing not only to support single frequency range on the basis of not increasing circuit area.
Description
Technical field
The invention belongs to wireless communication power amplifier technique field more particularly to CMOS complementary metal-oxide-semiconductors
(CMOS) radio-frequency power amplifier field, more specifically, it relates to a kind of single chip integrated double-frequency radio-frequency power amplifiers.
Background technique
Nowadays, the fast development of wireless communication industry has become the maximum bright spot of information industry, is for wireless communication
The design requirement of system is also higher and higher.In order to reduce volume and cost, many wireless devices not only need to take into account the same standard
Interior multiple frequency bands, it is also necessary to which compatible in different standard rooms, this just brings to double frequency-band, multiband microwave circuit and subsystem
The demand of system.Power amplifier is located at the end of transmitter in wireless communication system, and output power determines transmitting range
Length, therefore power amplifier is very important a part in communication system.Radio-frequency power amplifier is widely used in satellite
The fields such as communication, radar and various industrial equipments lead to along with the development of wireless telecommunications and military field new standard new technology
The growth requirement of the diversification of letter and various wireless devices, therefore, wireless communication system wants the performance of radio-frequency power amplifier
It asks and also correspondinglys increase, in order to pursue the optimization of system performance and price, double frequency or multifrequency power amplifier have become one
The popular direction of a research.
Current double-frequency power amplifier is broadly divided into following three classes: the first kind is the two-band power based on Unit selection
Amplifier.This power amplifier structure is formed in parallel by the single band power amplifier to work in two different frequencies, switches function using electronic switch
It works in amplification module and is realized in the power amplifier unit of different frequency, but such power amplifier must realize using two power amplifier units
Dual band functionality, required DC power is big, and area occupied is big, this will lead to cooling system respectively and the cost of circuit mentions
Height can not support two band operations simultaneously.Second class is that the concept based on restructural load realizes that the power of double frequency-band is put
Big device.The maximum feature of this power amplifier is exactly to apply a power amplifier unit, in conjunction with devices such as mems switch, varactors can
Reconstruction property realizes the power amplifier structure of double frequency-band, can not support two band operations simultaneously.Simultaneously as restructural member
There is reliability in part, so directly affecting the reliability and performance of double frequency-band power amplifier.Third class is based on double frequency-band
The dual-band power amplifier of impedance matching network.This structure maximum feature is using that can be worked at the same time in two frequency bands
It is realized with circuit.Therefore, it can not only reduce system power dissipation and circuit design cost to a certain extent, while can also be only with one
A circuit realizes that two frequency bands work at the same time.
Two-band power amplifier based on Unit selection and the concept based on restructural load realize the power of double frequency-band
The disadvantages of amplifier can realize optimal performance in each frequency range, but big there is area occupied；Based on double frequency-band impedance
Presently, there are the compromise problems of the index of two frequency ranges for the dual-band power amplifier of matching network, can not be in respective frequency range
It is upper to realize optimal performance.Therefore, under the conditions of area is not increased, how simultaneously two frequency ranges realize optimal performance at
For one of the difficult point of current double-frequency radio-frequency power amplifier.
Summary of the invention
Purpose of the invention is to overcome the shortcomings in the prior art, provides a kind of single chip integrated double-frequency radio-frequency power
Amplifier guarantees each frequency range performance in the work for guaranteeing not only to support single frequency range on the basis of not increasing circuit area
It is optimal, go back while supporting the work of two frequency ranges.
The purpose of the present invention is what is be achieved through the following technical solutions.
Single chip integrated double-frequency radio-frequency power amplifier of the invention, including first via first order Power Amplifier Unit mould
Block, first via second level Power Amplifier Unit module, the second tunnel first order Power Amplifier Unit module and the second tunnel second
Stage power amplifier unit module, the first via first order Power Amplifier Unit module input and the second tunnel first order function
Input terminal transformer, the first via second level Power Amplifier Unit mould are connected between rate amplifier unit module input terminal
It is connected with output end transformer between block output end and the second tunnel second level Power Amplifier Unit module output end, described first
Connect between road first order Power Amplifier Unit module output end and first via second level Power Amplifier Unit module input
It is connected to first via interstage transformer, the second tunnel first order Power Amplifier Unit module output end and the second tunnel second level function
No. second interstage transformer is connected between rate amplifier unit module input terminal；
The primary coil of the input terminal transformer is in series by four inductance, and the primary coil connects input terminal
Mouthful；The secondary coil of the input terminal transformer is made of four inductance, and two of them inductance connection is in first via first order function
Between rate amplifier unit module and the positive input of the second tunnel first order Power Amplifier Unit module, other two inductance
It is connected to the reversed defeated of first via first order Power Amplifier Unit module and the second tunnel first order Power Amplifier Unit module
Enter between end；
The secondary coil of the output end transformer is in series by four inductance, and the secondary coil connects output end
Mouthful；The primary coil of the output end transformer is made of four inductance, and two of them inductance connection is in first via second level function
Between rate amplifier unit module and the positive output end of the second tunnel second level Power Amplifier Unit module, other two inductance
It is connected to the reversed defeated of first via second level Power Amplifier Unit module and the second tunnel second level Power Amplifier Unit module
Between outlet；It is connected between the positive output end and inverse output terminal of the first via second level Power Amplifier Unit module
No.1 control switch connects between the positive output end and inverse output terminal of second tunnel second level Power Amplifier Unit module
It is connected to No. two control switches；
The primary coil and secondary coil of the first via interstage transformer are made of two inductance, the primary coil
It is connected between the positive output end and inverse output terminal of first via first order Power Amplifier Unit module, the secondary coil
It is connected between the positive input and reverse input end of first via second level Power Amplifier Unit module；
The primary coil and secondary coil of No. second interstage transformer are made of two inductance, the primary coil
It is connected between the positive output end and inverse output terminal of the second tunnel first order Power Amplifier Unit module, the secondary coil
It is connected between the positive input and reverse input end of the second tunnel second level Power Amplifier Unit module.
Four inductance of the input terminal transformer secondary coil are divided into two groups, and every group includes two electricity being one another in series
Sense, wherein one group is connected to first via first order Power Amplifier Unit module and the second tunnel first order Power Amplifier Unit mould
Between the positive input of block, another group is connected to first via first order Power Amplifier Unit module and the second tunnel first order function
Between the reverse input end of rate amplifier unit module.
Four inductance of the output end transformer are divided into two groups, and every group includes two electricity being one another in series
Sense, wherein one group is connected to first via second level Power Amplifier Unit module and the second tunnel second level Power Amplifier Unit mould
Between the positive output end of block, another group is connected to first via second level Power Amplifier Unit module and the second tunnel second level function
Between the inverse output terminal of rate amplifier unit module.
The primary coil of the first via interstage transformer is connected with No.1 voltage source, the first via interstage transformer
Secondary coil is connected with No.1 bias supply；The primary coil of No. second interstage transformer is connected with No. two voltage sources, institute
The secondary coil for stating No. second interstage transformer is connected with No. two bias supplies.
The No.1 control switch and No. two control switches are made of transistor.
Compared with prior art, the beneficial effects brought by the technical solution of the present invention are as follows:
Present invention firstly provides the structures that novel double-frequency radio-frequency power amplifier is realized in transformer matching+switch selection.
In order to reduce the area of entire double-frequency radio-frequency power amplifier, active part is divided into two-way to the present invention in design, between two-stage
Matching network using transformer by the impedance of two-way while carry out transformation to realize impedance matching and the function of double frequency
Rate coupling.Meanwhile in order to realize the optimal of each frequency range performance, in Design of Transformer, the working frequency according to double frequency is needed
Requirement by the size design of transformer to optimal result.In addition to this, the present invention adds one group of control switch in output end,
The requirement for working independently or working at the same time of two frequency ranges is realized by the on-off of control switch.
The present invention uses the topological structure of transformer+switch radio-frequency power amplifier, realizes two simultaneously using transformer
The impedance variations on road not only can solve the realization dual-frequency amplifier area occupied based on Unit selection and based on restructural load
The problems such as big, and maintain the dual-band power amplifier based on dual band impedance match network and can support two frequencies simultaneously
The work of section.Meanwhile in conjunction with switch control make double-frequency power amplifier meet wireless device diversification growth requirement.
Detailed description of the invention
Fig. 1 is the circuit block diagram of single chip integrated double-frequency radio-frequency power amplifier of the invention.
Appended drawing reference: PA1 first via first order Power Amplifier Unit module, the second stage power amplifier of the PA2 first via
Unit module, the second tunnel PA3 first order Power Amplifier Unit module, the second tunnel PA4 second level Power Amplifier Unit module,
PA_IN input port, PA_OUT output port, VD1No.1 voltage source, VD2No. two voltage sources, VG1No.1 bias supply, VG2No. two
Bias supply, Vctrl_A No.1 control switch, No. bis- control switches of Vctrl_B, L1 No.1 inductance, No. bis- inductance of L2, L3 tri-
Inductance, No. tetra- inductance of L4, No. five inductance of L5, No. six inductance of L6, No. seven inductance of L7, No. eight inductance of L8, No. nine inductance of L9, L10 ten
Number inductance, L11 ride on Bus No. 11 inductance, ten No. two inductance of L12, ten No. three inductance of L13, ten No. four inductance of L14, ten No. five inductance of L15,
Ten No. six inductance of L16, ten No. seven inductance of L17, ten No. eight inductance of L18, ten No. nine inductance of L19, bis- No. ten inductance of L20, L21 20
No.1 inductance, 20 No. two inductance of L22,20 No. three inductance of L23,20 No. four inductance of L24.
Specific embodiment
The present invention is based on the growth requirement of the diversification of current various wireless devices, proposes a kind of transformer and match+open
Close the radio-frequency power amplifier that two-frequency operation is realized in selection.Illustrate technical solution of the present invention in order to clearer, below with reference to
The invention will be further described for attached drawing.
As shown in Figure 1, single chip integrated double-frequency radio-frequency power amplifier of the invention, including first via first order power are put
Big device unit module PA1, first via second level Power Amplifier Unit module PA2, the second tunnel first order Power Amplifier Unit
Module PA3 and the second tunnel second level Power Amplifier Unit module PA4.The first via first order Power Amplifier Unit module
It is connected with input terminal transformer between PA1 input terminal and the second tunnel first order Power Amplifier Unit module PA3 input terminal, it is described
First via second level Power Amplifier Unit module PA2 output end and the second tunnel second level Power Amplifier Unit module PA4 are defeated
Output end transformer, the first via first order Power Amplifier Unit module PA1 output end and first are connected between outlet
First via interstage transformer, second tunnel first are connected between the Power Amplifier Unit module PA2 input terminal of the road second level
Connect between stage power amplifier unit module PA3 output end and the second tunnel second level Power Amplifier Unit module PA4 input terminal
It is connected to No. second interstage transformer.
The primary coil of the input terminal transformer is set to the outer layer of secondary coil.The primary of the input terminal transformer
Coil is in series by four inductance (including No.1 inductance L1, No. two inductance L2, No. three inductance L3, No. four inductance L4), and should
Primary coil connects input port PA_IN.The secondary coil of the input terminal transformer is made of four inductance, four inductance point
It is two groups, every group includes two inductance being one another in series, wherein one group of inductance (including No. five inductance L5 and No. six inductance L6)
It is connected to first via first order Power Amplifier Unit module PA1's and the second tunnel first order Power Amplifier Unit module PA3
Between positive input, another group of inductance (including No. seven inductance L7 and No. eight inductance L8) is connected to first via first order power and puts
Between big device unit module PA1 and the reverse input end of the second tunnel first order Power Amplifier Unit module PA3.
The secondary coil of the output end transformer is set to the outer layer of primary coil.The secondary of the output end transformer
Coil by four inductance (including ten No. seven inductance L17, ten No. eight inductance L18, ten No. nine inductance L19, two No. ten inductance) series connection
It constitutes, and the secondary coil connects output port PA_OUT.The primary coil of the output end transformer is made of four inductance,
Four inductance are divided into two groups, and every group includes two inductance being one another in series, wherein one group of inductance (including 20 No. three inductance
L23 and 20 No. four inductance L24) it is connected to first via second level Power Amplifier Unit module PA2 and the second tunnel second level function
Between the positive output end of rate amplifier unit module PA4, another group of inductance (including 20 No. three inductance L21 and 20 No. four
Inductance L22) it is connected to first via second level Power Amplifier Unit module PA2 and the second tunnel second level Power Amplifier Unit mould
Between the inverse output terminal of block PA4.The positive output end of the first via second level Power Amplifier Unit module PA2 and reversed
No.1 control switch Vctrl_A is connected between output end, second tunnel second level Power Amplifier Unit module PA4 is just
To being connected with No. two control switches Vctrl_B, the No.1 control switch Vctrl_A and two between output end and inverse output terminal
Number control switch Vctrl_B is made of transistor.
The secondary coil of the first via interstage transformer is set to the outer layer of primary coil, transformation between the first via grade
The primary coil and secondary coil of device are in series by two inductance, the primary coil (including ride on Bus No. 11 inductance L11 and ten
No. two inductance L12) be connected to first via first order Power Amplifier Unit module PA1 positive output end and inverse output terminal it
Between, the secondary coil (including No. nine inductance L9 and No. ten inductance L10) is connected to first via second level Power Amplifier Unit
Between the positive input and reverse input end of module PA2.The primary coil of the first via interstage transformer is connected with No.1
Voltage source VD1, the secondary coil of the first via interstage transformer is connected with No.1 bias supply VG1。
The primary coil and secondary coil of No. second interstage transformer are in series by two inductance, the primary
Coil (including ten No. five inductance L15 and ten No. six inductance L16) is connected to the second tunnel first order Power Amplifier Unit module PA3
Positive output end and inverse output terminal between, the secondary coil (including ten No. three inductance L13 and ten No. four inductance L14) is even
It is connected between the positive input and reverse input end of the second tunnel second level Power Amplifier Unit module PA4.Second tunnel
The primary coil of interstage transformer is connected with No. two voltage source VD2, the secondary coil of No. second interstage transformer is connected with two
Number bias supply VG2。
The part of the amplifier of the core of single chip integrated double-frequency radio-frequency power amplifier proposed by the present invention uses two-way
Realized, above the first via working frequency be f1, below the second tunnel working frequency be f2.This guarantees two-way power amplification
Device different frequency can be biased under different working conditions, play optimal performance.Meanwhile in order in two different frequencies
Place obtains bigger output power, every all to be realized all the way using the power amplifier of two-stage.
Compatible portion is realized using transformer.Wherein, it is outputting and inputting at matching, in order to realize two-way difference
The requirement for outputting and inputting impedance matching of frequency power amplifier, is realized using the transformer of one-to-two.Grade between
Transformer with place separates to be realized using two-way, but during realization, the area of two transformers accounts for respectively
The half of input (or output) matching transformer meets the difference at different frequency under conditions of not introducing additional areas
Impedance matching demand, realize Optimum Matching.Wherein, VG1With VG2First via second level Power Amplifier Unit mould is given respectively
Block PA2 and the second tunnel second level Power Amplifier Unit module PA4 provides gate bias voltage, VD1With VD2Respectively to first
Road first order Power Amplifier Unit module PA1 and the second tunnel first order Power Amplifier Unit module PA3 provides supply voltage.
It, can different sizes to transformer according to impedance at different frequency and corresponding metal layer during Design of Transformer
Number makes appropriate choice and adjusts.The advantage of RF IC multiple layer metal is greatly utilized in this.Because in radio-frequency power
During the layout drawing of amplifier, passive compatible portion determines the area of entire power amplifier.Therefore, transformation is utilized
Device not only realizes the demand of double frequency, while the area of double-frequency power amplifier is greatly saved.
In addition to this, the present invention adds one group of control switch in the output end of two-way power amplifier and realizes to working frequency
Selection, specific selection is as shown in table 1.When Vctrl_A and Vctrl_B are respectively at the state of " disconnected " and " logical ", radio frequency
The upper surface of power amplifier works all the way, working frequency f1；On the contrary, when Vctrl_A and Vctrl_B be respectively at " logical " and
When the state of " disconnected ", working frequency f2.In the state that Vctrl_A and Vctrl_B is all in " disconnected ", radio-frequency power amplifier
It is worked at the same time at two frequencies.
Table 1 is the working condition of double-frequency power amplifier corresponding to the state of switch
| State | Vctrl_A | Vctrl_B | Working frequency |
| 1 | It is disconnected | It is logical | f1 |
| 2 | It is logical | It is disconnected | f2 |
| 3 | It is disconnected | It is disconnected | f1&f2 |
Although function and the course of work of the invention are described above in conjunction with attached drawing, the invention is not limited to
Above-mentioned concrete function and the course of work, the above mentioned embodiment is only schematical, rather than restrictive, ability
The those of ordinary skill in domain under the inspiration of the present invention, is not departing from present inventive concept and scope of the claimed protection situation
Under, many forms can also be made, all of these belong to the protection of the present invention.
Claims (5)
1. a kind of single chip integrated double-frequency radio-frequency power amplifier, including first via first order Power Amplifier Unit module
(PA1), first via second level Power Amplifier Unit module (PA2), the second tunnel first order Power Amplifier Unit module (PA3)
With the second tunnel second level Power Amplifier Unit module (PA4), which is characterized in that the first stage power amplifier of first via list
Input terminal is connected between element module (PA1) input terminal and second tunnel first order Power Amplifier Unit module (PA3) input terminal
Transformer, first via second level Power Amplifier Unit module (PA2) output end and second the second stage power amplifier of tunnel
Output end transformer, the first via first order Power Amplifier Unit module are connected between unit module (PA4) output end
(PA1) it is connected between first via grade and becomes between output end and the first via second level Power Amplifier Unit module (PA2) input terminal
Depressor, the second tunnel first order Power Amplifier Unit module (PA3) output end and second tunnel the second stage power amplifier list
No. second interstage transformer is connected between element module (PA4) input terminal；
The primary coil of the input terminal transformer is in series by four inductance, and the primary coil connects input port (PA_
IN)；The secondary coil of the input terminal transformer is made of four inductance, and two of them inductance connection is in first via first order function
Between rate amplifier unit module (PA1) and the positive input of the second tunnel first order Power Amplifier Unit module (PA3), separately
Outer two inductance connections are in first via first order Power Amplifier Unit module (PA1) and second tunnel the first stage power amplifier list
Between the reverse input end of element module (PA3)；
The secondary coil of the output end transformer is in series by four inductance, and the secondary coil connects output port (PA_
OUT)；The primary coil of the output end transformer is made of four inductance, and two of them inductance connection is in the first via second level
Between Power Amplifier Unit module (PA2) and the positive output end of the second tunnel second level Power Amplifier Unit module (PA4),
Other two inductance connection is in first via second level Power Amplifier Unit module (PA2) and second the second stage power amplifier of tunnel
Between the inverse output terminal of unit module (PA4)；The forward direction of the first via second level Power Amplifier Unit module (PA2) is defeated
It is connected between outlet and inverse output terminal No.1 control switch (Vctrl_A), the second stage power amplifier of the second tunnel list
No. two control switches (Vctrl_B) are connected between the positive output end and inverse output terminal of element module (PA4)；
The primary coil and secondary coil of the first via interstage transformer are made of two inductance, the primary coil connection
Between the positive output end and inverse output terminal of first via first order Power Amplifier Unit module (PA1), the secondary wire
Circle is connected between the positive input and reverse input end of first via second level Power Amplifier Unit module (PA2)；
The primary coil and secondary coil of No. second interstage transformer are made of two inductance, the primary coil connection
Between the positive output end and inverse output terminal of the second tunnel first order Power Amplifier Unit module (PA3), the secondary wire
Circle is connected between the positive input and reverse input end of the second tunnel second level Power Amplifier Unit module (PA4).
2. single chip integrated double-frequency radio-frequency power amplifier according to claim 1, which is characterized in that the input terminal becomes
Four inductance of depressor secondary coil are divided into two groups, and every group includes two inductance being one another in series, wherein one group is connected to
The forward direction of first order Power Amplifier Unit module (PA1) and the second tunnel first order Power Amplifier Unit module (PA3) all the way
Between input terminal, another group is connected to first via first order Power Amplifier Unit module (PA1) and the second tunnel first order power
Between the reverse input end of amplifier unit module (PA3).
3. single chip integrated double-frequency radio-frequency power amplifier according to claim 1, which is characterized in that the output end becomes
Four inductance of depressor primary coil are divided into two groups, and every group includes two inductance being one another in series, wherein one group is connected to
The forward direction of second level Power Amplifier Unit module (PA2) and the second tunnel second level Power Amplifier Unit module (PA4) all the way
Between output end, another group is connected to first via second level Power Amplifier Unit module (PA2) and the second tunnel second level power
Between the inverse output terminal of amplifier unit module (PA4).
4. single chip integrated double-frequency radio-frequency power amplifier according to claim 1, which is characterized in that the first via grade
Between the primary coil of transformer be connected with No.1 voltage source (VD1), the secondary coil of the first via interstage transformer is connected with one
Number bias supply (VG1)；The primary coil of No. second interstage transformer is connected with No. two voltage source (VD2), second tunnel
The secondary coil of interstage transformer is connected with No. two bias supply (VG2)。
5. single chip integrated double-frequency radio-frequency power amplifier according to claim 1, which is characterized in that the No.1 control
Switch (Vctrl_A) and No. two control switches (Vctrl_B) are made of transistor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811077922.7A CN109450393A (en) | 2018-09-16 | 2018-09-16 | A kind of single chip integrated double-frequency radio-frequency power amplifier |
| LU101198A LU101198B1 (en) | 2018-09-16 | 2019-04-30 | A monolithically integrated dual-band RF power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811077922.7A CN109450393A (en) | 2018-09-16 | 2018-09-16 | A kind of single chip integrated double-frequency radio-frequency power amplifier |
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| Publication Number | Publication Date |
|---|---|
| CN109450393A true CN109450393A (en) | 2019-03-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811077922.7A Pending CN109450393A (en) | 2018-09-16 | 2018-09-16 | A kind of single chip integrated double-frequency radio-frequency power amplifier |
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| Country | Link |
|---|---|
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| LU (1) | LU101198B1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW445704B (en) * | 2000-01-04 | 2001-07-11 | Ind Tech Res Inst | Second harmonic terminations for high efficiency radio frequency dual-band power amplifier |
| US20010011926A1 (en) * | 1996-06-03 | 2001-08-09 | Anadigics, Inc. | Multiple-band amplifier |
| WO2015101147A1 (en) * | 2013-12-30 | 2015-07-09 | 国民技术股份有限公司 | Multi-mode multi-frequency power amplifier |
-
2018
- 2018-09-16 CN CN201811077922.7A patent/CN109450393A/en active Pending
-
2019
- 2019-04-30 LU LU101198A patent/LU101198B1/en active IP Right Grant
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010011926A1 (en) * | 1996-06-03 | 2001-08-09 | Anadigics, Inc. | Multiple-band amplifier |
| TW445704B (en) * | 2000-01-04 | 2001-07-11 | Ind Tech Res Inst | Second harmonic terminations for high efficiency radio frequency dual-band power amplifier |
| WO2015101147A1 (en) * | 2013-12-30 | 2015-07-09 | 国民技术股份有限公司 | Multi-mode multi-frequency power amplifier |
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| Title |
|---|
| QUN JANE GU: "Two-Way Current-Combining W-Band Power Amplifier in 65-nm CMOS", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 》 * |
| YI ZHAO: "A Wideband, Dual-Path, Millimeter-Wave Power Amplifier With 20 dBm Output Power and PAE Above 15% in 130 nm SiGe-BiCMOS", 《 IEEE JOURNAL OF SOLID-STATE CIRCUITS》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| LU101198B1 (en) | 2019-08-26 |
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Application publication date: 20190308 |