CN112422144B - Radio frequency front-end device and wireless device - Google Patents
Radio frequency front-end device and wireless device Download PDFInfo
- Publication number
- CN112422144B CN112422144B CN202011193836.XA CN202011193836A CN112422144B CN 112422144 B CN112422144 B CN 112422144B CN 202011193836 A CN202011193836 A CN 202011193836A CN 112422144 B CN112422144 B CN 112422144B
- Authority
- CN
- China
- Prior art keywords
- radio frequency
- signal transmission
- transmission line
- switch
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Transceivers (AREA)
Abstract
The invention discloses a radio frequency front-end device. The radio frequency front end device comprises a filter and a selective switch which are arranged on a substrate, wherein the selective switch is used for connecting a radio frequency antenna, the filter and the selective switch are connected on the substrate through a signal transmission line, a compensation metal wire is arranged on a wiring layer adjacent to the signal transmission line, the compensation metal wire and the projection of the signal transmission line in the longitudinal direction are at least partially overlapped, and the compensation metal wire is connected with a grounding end. The radio frequency front-end device utilizes the at least partial overlapping of the projection of the compensation metal wire and the signal transmission line in the longitudinal direction to form a parallel plate capacitor in a matching way, so that the inductive impedance presented by the overlong signal transmission line between the filter and the selection switch in the radio frequency front-end device is counteracted, and the impedance matching is realized; and no additional matching capacitor is needed to be configured on the signal transmission line, namely, the total occupied area of the radio frequency front-end device is not needed to be increased additionally, so that the size requirement of the radio frequency front-end device is met.
Description
Technical Field
The present invention relates to the field of radio frequency communications technologies, and in particular, to a radio frequency front end device and a wireless device.
Background
In the existing radio frequency front-end device development and design process, an integrated passive device and a passive device circuit are generally adopted to reduce the overall size of the radio frequency front-end device. For example, in the rf front-end apparatus, passive devices are used to form a passive device circuit having a certain function, such as the impedance matching circuit 7, the filter, and the selection switch, so as to reduce the overall size of the rf front-end apparatus.
In the design process of the high-efficiency radio frequency front-end device, all necessary passive devices cannot be integrated on the same layer of circuit board due to the limited size of the radio frequency front-end device, so that specific functions can be realized. As shown in fig. 1, a conventional rf front-end device is generally connected to an rf antenna 1, the rf front-end device includes a filter 2, and a selection switch 3 connected to the filter 2, the selection switch 3 is connected to the rf antenna 1, and generally, a signal transmission line 4 is used to connect the filter 2 and the selection switch 3. In the actual packaging process of the existing radio frequency front-end device, according to the design and the requirement of wiring, the signal transmission line 4 between the filter 2 and the selection switch 3 is often designed to be longer, so that the signal transmission line 4 is equivalent to a series equivalent inductor; moreover, when the selection switch 3 is operated, part of the rf switches in the selection switch 3 are connected to the ground, which generates a capacitance to ground, but the capacitance is not enough to compensate the inductive impedance caused by the long length of the signal transmission line, so that the whole rf front-end device presents an inductive impedance. In order to eliminate the inductive impedance formed in the working process of the radio frequency front-end device and realize impedance matching, in the prior art, a matching capacitor C0 connected with a ground terminal is generally connected in parallel on a signal transmission line, and the impedance matching of the radio frequency front-end device is realized by utilizing the matching capacitor C0 to eliminate the inductive impedance, but the total occupied area of the radio frequency front-end device is increased by connecting the matching capacitor C0 in parallel, so that the size requirement for deleting the radio frequency front-end device cannot be met.
Disclosure of Invention
The embodiment of the invention provides a radio frequency front-end device, which aims to solve the problems that the existing radio frequency front-end device cannot compatibly eliminate inductive impedance and the total occupied area is small.
The invention provides a radio frequency front-end device, which comprises a filter and a selection switch arranged on a substrate, wherein the selection switch is used for connecting a radio frequency antenna, the filter and the selection switch are connected on the substrate through a signal transmission line, a compensation metal wire is arranged on a wiring layer adjacent to the signal transmission line, the projection of the compensation metal wire and the signal transmission line in the longitudinal direction is at least partially overlapped, and the compensation metal wire is connected with a grounding end.
Preferably, the wiring layer where the compensation metal line is located is an adjacent upper layer of the wiring layer where the signal transmission line is located, or the wiring layer where the compensation metal line is located is an adjacent lower layer of the wiring layer where the signal transmission line is located.
Preferably, a projected overlapping area of the signal transmission line and the compensation metal line in the longitudinal direction is configured to be proportional to a length of the signal transmission line.
Preferably, a relative distance between the wiring layer where the signal transmission line is located and the wiring layer where the compensation metal line is located is configured to be inversely proportional to a length of the signal transmission line.
Preferably, the selection switch comprises at least one transmission path, and each transmission path comprises a selection series radio frequency switch and a selection parallel radio frequency switch;
the selective series radio frequency switch is arranged between the parallel plate capacitor and the radio frequency antenna in series;
one end of the selective parallel radio frequency switch is connected with a connecting node between the parallel plate capacitor and the selective series radio frequency switch, or connected with a connecting node between two adjacent selective series radio frequency switches, or connected with a connecting node between the selective series radio frequency switch and the radio frequency antenna, and the other end of the selective parallel radio frequency switch is connected with a grounding end.
Preferably, the selective series radio frequency switch comprises a first series radio frequency switch, and the selective parallel radio frequency switch comprises a first parallel radio frequency switch and a second parallel radio frequency switch;
the first series RF switch disposed in series between the parallel plate capacitor and the RF antenna;
one end of the first parallel radio frequency switch is connected with a connection node between the parallel plate capacitor and the first series radio frequency switch, and the other end of the first parallel radio frequency switch is connected with a grounding end;
one end of the second parallel radio frequency switch is connected with a connection node between the first serial radio frequency switch and the radio frequency antenna, and the other end of the second parallel radio frequency switch is connected with a grounding end.
Preferably, the radio frequency front-end device further comprises an amplifying transistor circuit, a first end of the amplifying transistor circuit is used as an input end of the radio frequency front-end device, and an output end of the amplifying transistor circuit is connected with the filter.
Preferably, the radio frequency front-end device further includes an impedance matching circuit, one end of the impedance matching circuit is connected to a connection node between the amplifying transistor circuit and the filter, and the other end of the impedance matching circuit is connected to a ground terminal.
Preferably, the impedance matching circuit comprises a first branch, a second branch and a third branch which are arranged in parallel;
the first branch circuit comprises a first capacitor and a first inductor which are arranged in series, the first capacitor is connected with a connection node between the amplifying transistor circuit and the filter, and the first inductor is connected with a grounding end;
the second branch circuit comprises a second capacitor, one end of the second capacitor is connected with a connection node between the amplifying transistor circuit and the filter, and the other end of the second capacitor is connected with a grounding end;
and the third branch circuit comprises a second inductor, one end of the second inductor is connected with a connecting node between the amplifying transistor circuit and the filter, and the other end of the second inductor is connected with a grounding end.
The invention also provides a wireless device comprising the radio frequency front-end device.
The radio frequency front-end device and the wireless device adopt signal transmission lines to connect the filter and the selection switch so as to realize the basic function of radio frequency signal transmission; and a compensation metal wire is arranged on the wiring layer adjacent to the signal transmission line, and the compensation metal wire and the projection of the signal transmission line in the longitudinal direction are at least partially overlapped, so that the signal transmission line and the compensation metal wire are matched to form a parallel plate capacitor, and the parallel plate capacitor is utilized to counteract the inductive impedance presented by the overlong signal transmission line between the filter and the selection switch in the radio frequency front-end device, thereby realizing impedance matching. The compensation metal wire is arranged on the adjacent wiring layer of the signal transmission wire, and a matching capacitor is not required to be additionally configured on the wiring layer where the signal transmission wire is arranged, so that the total occupied area of the radio frequency front-end device is not required to be additionally increased, and the size requirement of the radio frequency front-end device is met.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a schematic circuit diagram of a prior art RF front-end device;
FIG. 2 is a schematic circuit diagram of an RF front-end device according to an embodiment of the present invention;
FIG. 3 is another circuit diagram of an RF front-end device according to an embodiment of the present invention;
FIG. 4 is another circuit diagram of an RF front-end device according to an embodiment of the present invention;
FIG. 5 is another schematic circuit diagram of an RF front-end device according to an embodiment of the present invention;
FIG. 6 is a schematic circuit diagram of an RF front-end device according to an embodiment of the present invention;
fig. 7 is a circuit diagram of an impedance matching circuit according to an embodiment of the invention.
1, a radio frequency antenna; 2. a filter; 3. a selector switch; s11, a first series radio frequency switch; s21, a first parallel radio frequency switch; s22, a second parallel radio frequency switch; 4. a signal transmission line; 5. a compensation metal line; 6. an amplifying transistor circuit; 7. an impedance matching circuit; c1, a first capacitance; c2, a second capacitor; l1, a first inductor; l2, a second inductor; c0, matching capacitance.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity to indicate like elements throughout.
It will be understood that when an element or layer is referred to as being "on" …, "adjacent to …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on …," "directly adjacent to …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
Spatial relational terms such as "under …," "under …," "below," "under …," "over …," "above," and the like may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under …" and "under …" can include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
In the following description, for purposes of explanation, specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.
An embodiment of the present invention provides a radio frequency front end device, as shown in fig. 1, the radio frequency front end device includes a filter 2 and a selection switch 3, which are disposed on a substrate, the selection switch 3 is used for connecting a radio frequency antenna 1, the filter 2 and the selection switch 3 are connected on the substrate through a signal transmission line 4, a compensation metal line 5 is disposed on a wiring layer adjacent to the signal transmission line 4, a projection of the compensation metal line 5 and the signal transmission line 4 in a longitudinal direction at least partially overlaps, and the compensation metal line 5 is connected to a ground terminal.
The signal transmission line 4 is a metal line for transmitting radio frequency signals. The compensation metal line 5 is a metal line provided on a wiring layer adjacent to the wiring layer on which the signal transmission line 4 is located. In this example, the signal transmission line 4 and the compensation metal line 5 are disposed on two adjacent wiring layers, the two adjacent wiring layers are disposed in parallel and opposite to each other, and the projection of the compensation metal line 5 and the signal transmission line 4 in the longitudinal direction at least partially overlaps, so that the compensation metal line 5 and the signal transmission line 4 cooperate to form a parallel plate capacitor, and the parallel plate capacitor is used to cancel inductive impedance presented by the excessively long signal transmission line between the filter 2 and the selection switch 3 in the radio frequency front end device, thereby implementing impedance matching.
In the radio frequency front-end device provided in the embodiment, the signal transmission line 4 is adopted to connect the filter 2 and the selection switch 3, so as to realize the basic function of radio frequency signal transmission; a compensation metal wire 5 is arranged on the wiring layer adjacent to the signal transmission line 4, and the compensation metal wire 5 and the projection of the signal transmission line 4 in the longitudinal direction are at least partially overlapped, so that the signal transmission line 4 and the compensation metal wire 5 are matched to form a parallel plate capacitor, and the parallel plate capacitor is utilized to counteract the inductive impedance presented by the radio frequency front-end device due to the overlong signal transmission line between the filter 2 and the selection switch 3, thereby realizing impedance matching. Since the compensation metal line 5 is disposed on the adjacent wiring layer of the signal transmission line 4, it is not necessary to additionally configure the matching capacitor C0 on the wiring layer where the signal transmission line 4 is located, and therefore, the total occupied area of the rf front-end device does not need to be additionally increased, so as to meet the size requirement of the rf front-end device.
In one embodiment, the wiring layer in which the compensation metal line 5 is located is an adjacent upper layer of the wiring layer in which the signal transmission line 4 is located, or the wiring layer in which the compensation metal line 5 is located is an adjacent lower layer of the wiring layer in which the signal transmission line 4 is located.
As an example, as shown in fig. 2, a wiring layer where a compensation metal line 5 is located is an adjacent upper layer of a wiring layer where a signal transmission line 4 is located, specifically, an adjacent upper layer of a wiring layer where a signal transmission line 4 is located, and the compensation metal line 5 is connected to a ground terminal, where the compensation metal line 5 and the signal transmission line 4 are at least partially overlapped in a projection in a longitudinal direction, so that a parallel plate capacitor is formed between the signal transmission line 4 and the compensation metal line 5 in a matching manner, and impedance matching is achieved due to an inductive impedance presented by an excessively long signal transmission line between the filter 2 and the selection switch 3 in the radio frequency front end device; since the wiring layer where the compensation metal line 5 is located is an adjacent upper layer of the wiring layer where the signal transmission line 4 is located, and the matching capacitor C0 does not need to be additionally configured on the wiring layer where the signal transmission line 4 is located, the total occupied area of the radio frequency front end device does not need to be additionally increased, so that the size requirement of the radio frequency front end device is met.
In this example, the gap between the wiring layer where the signal transmission line 4 is located and the wiring layer where the compensation metal line 5 is located may be filled with an air dielectric, or may be filled with an insulating dielectric, and may be set according to actual requirements.
As another example, as shown in fig. 3, a wiring layer where a compensation metal line 5 is located is an adjacent lower layer of a wiring layer where a signal transmission line 4 is located, specifically, an adjacent lower layer of a wiring layer where a signal transmission line 4 is located, and the compensation metal line 5 is connected to a ground terminal, where the compensation metal line 5 and a projection of the signal transmission line 4 in the longitudinal direction at least partially overlap, so that a parallel plate capacitor is formed by matching the signal transmission line 4 and the compensation metal line 5, and impedance matching is achieved due to an inductive impedance presented by an overlong signal transmission line between the filter 2 and the selection switch 3 in the radio frequency front end device; because the wiring layer of the compensation metal wire 5 is the adjacent lower layer of the wiring layer of the signal transmission line 4, and the matching capacitor C0 is not required to be additionally configured on the signal transmission line 4 where the signal transmission line 4 is located, the total occupied area of the radio frequency front-end device is not required to be additionally increased, so as to meet the size requirement of the radio frequency front-end device.
In this example, the gap between the signal transmission line 4 and the compensation metal line 5 may be filled with an air dielectric, or may be filled with an insulating dielectric, and may be set according to actual requirements.
The parallel plate capacitor is formed by the signal transmission line 4 and the compensation metal line 5 which are at least partially overlapped in projection in the longitudinal direction, and when a voltage is applied between the signal transmission line 4 and the compensation metal line 5, electric charges are stored between the parallel plate capacitors, and the electric charges which can be stored between the parallel plate capacitors are the capacitance values of the parallel plate capacitors.
Generally, the capacitance value of the parallel plate capacitor is proportional to the projected overlapping area of the signal transmission line 4 and the compensation metal line 5 in the longitudinal direction, i.e. the larger the projected overlapping area of the signal transmission line 4 and the compensation metal line 5 in the longitudinal direction, the larger the capacitance value of the parallel plate capacitor; conversely, the smaller the projected overlapping area of the signal transmission line 4 and the compensation metal line 5 in the longitudinal direction, the smaller the capacitance value of the parallel plate capacitor.
Generally, the capacitance value of the parallel plate capacitor is inversely proportional to the relative distance between the wiring layer where the signal transmission line 4 is located and the wiring layer where the compensation metal line 5 is located, that is, the larger the relative distance between the wiring layer where the signal transmission line 4 is located and the wiring layer where the compensation metal line 5 is located, the smaller the capacitance value of the parallel plate capacitor is; conversely, the smaller the relative distance between the wiring layer in which the signal transmission line 4 is located and the wiring layer in which the compensation metal line 5 is located, the larger the capacitance value of the parallel plate capacitor.
In one embodiment, the projected overlapping area of the signal transmission line 4 and the compensation metal line 5 in the longitudinal direction is configured to be proportional to the length of the signal transmission line 4.
Generally, the longer the length of the signal transmission line 4 is, the larger the equivalent inductance of the signal transmission line 4 is, and in order to eliminate the influence of loss or oscillation caused by the equivalent inductance formed by the signal transmission line 4, a parallel plate capacitor with a larger capacitance value is required; since the capacitance value of the parallel plate capacitor is proportional to the projected overlapping area of the signal transmission line 4 and the compensation metal line 5 in the longitudinal direction, the projected overlapping area of the signal transmission line 4 and the compensation metal line 5 in the longitudinal direction is configured to be proportional to the length of the signal transmission line 4.
In one embodiment, the relative distance between the wiring layer in which the signal transmission line 4 is located and the wiring layer in which the compensation metal line 5 is located is configured to be inversely proportional to the length of the signal transmission line 4.
Generally, the longer the length of the signal transmission line 4 is, the larger the equivalent inductance of the signal transmission line 4 is, and in order to eliminate the influence of loss or oscillation caused by the equivalent inductance formed by the signal transmission line 4, a parallel plate capacitor with a larger capacitance value is required; since the capacitance value of the parallel plate capacitor is inversely proportional to the relative distance between the wiring layer in which the signal transmission line 4 is located and the wiring layer in which the compensation metal line 5 is located, the relative distance between the wiring layer in which the signal transmission line 4 is located and the wiring layer in which the compensation metal line 5 is located is configured to be inversely proportional to the length of the signal transmission line 4.
In one embodiment, the selection switch 3 includes at least one transmission path, each transmission path including a selection series rf switch and a selection parallel rf switch; a series radio frequency switch is selected and is arranged between the parallel plate capacitor and the radio frequency antenna 1 in series; one end of the selective parallel radio frequency switch is connected with a connecting node between the parallel plate capacitor and the selective series radio frequency switch, or connected with a connecting node between two adjacent selective series radio frequency switches, or connected with a connecting node between the selective series radio frequency switch and the radio frequency antenna 1, and the other end of the selective parallel radio frequency switch is connected with a grounding end.
The transmission path refers to a path for transmitting or receiving a radio frequency signal, and specifically includes a transmission path for transmitting a radio frequency signal and a reception path for receiving a radio frequency signal.
As an example, when it is necessary to transmit a radio frequency signal through a transmission path between the parallel plate capacitor and the radio frequency antenna 1, a selective series radio frequency switch disposed in series between the parallel plate capacitor and the radio frequency antenna 1 is closed, and a selective parallel radio frequency switch is opened to transmit a radio frequency signal through all transmission paths of the selective series radio frequency switch.
As another example, when the radio frequency signal does not need to be transmitted through the transmission path between the parallel plate capacitor and the radio frequency antenna 1, but the end of the parallel plate capacitor connected to the selective series radio frequency switch, or the end of the radio frequency antenna 1 connected to the selective series radio frequency switch is at a high power/high voltage, the selective series radio frequency switch is used to share the high power/high voltage, and the selective parallel radio frequency switch is closed to ground the high voltage, so that the normal operation of the radio frequency switch is ensured, and the service life of the radio frequency switch is prolonged.
In one embodiment, as shown in fig. 4, the selecting series rf switch includes a first series rf switch S11, and the selecting parallel rf switch includes a first parallel rf switch S21 and a second parallel rf switch S22; a first series rf switch S11 arranged in series between the parallel plate capacitor and the rf antenna 1; a first parallel rf switch S21 having one end connected to a connection node between the parallel plate capacitor and the first series rf switch S11 and the other end connected to a ground terminal; one end of the second parallel rf switch S22 is connected to the connection node between the first serial rf switch S11 and the rf antenna 1, and the other end is connected to the ground.
As shown in fig. 4, the selection switch 3 is used for connecting the parallel plate capacitor and the rf antenna 1, and includes a first series rf switch S11, a first parallel rf switch S21, and a second parallel rf switch S22; the first series radio frequency switch S11 is arranged in series between the parallel plate capacitor and the radio frequency antenna 1; a first parallel rf switch S21 having one end connected to a connection node between the parallel plate capacitor and the first series rf switch S11 and the other end connected to a ground terminal; one end of the second parallel rf switch S22 is connected to the connection node between the first serial rf switch S11 and the rf antenna 1, and the other end is connected to the ground.
It should be understood that the processing procedure of the selection switch 3 applied to the transmission path of the rf front-end device for receiving the rf signal is similar to the processing procedure applied to the transmission path of the rf front-end device for receiving the rf signal, and is not repeated here.
In this embodiment, the first series rf switch S11, the first parallel rf switch S21, and the second parallel rf switch S22 are rf switches formed by a single transistor or rf switches formed by at least two transistors connected in series. Alternatively, the transistor may be a MOS transistor.
In an embodiment, as shown in fig. 5, the rf front-end device further includes an amplifying transistor circuit 6, a first terminal of the amplifying transistor circuit 6 is used as an input terminal of the rf front-end device, and an output terminal of the amplifying transistor circuit 6 is connected to the filter 2.
In this example, the radio frequency front-end device further includes an amplifying transistor circuit 6, a first end of the amplifying transistor circuit 6 is an input end of the radio frequency front-end device, an output end of the amplifying transistor circuit 6 is connected to the filter 2, and the amplifying transistor circuit 6 can amplify the received radio frequency signal and then send the amplified radio frequency signal to the filter 2 for filtering, so that the filter 2 transmits the filtered radio frequency signal to the outside through the radio frequency antenna 1.
In an embodiment, as shown in fig. 6, the rf front-end device further includes an impedance matching circuit 7, where one end of the impedance matching circuit 7 is connected to a connection node between the amplifying transistor circuit 6 and the filter 2, and the other end is connected to a ground terminal.
In this example, the impedance matching circuit 7 has one end connected to a connection node between the amplifying transistor circuit 6 and the filter 2 and the other end connected to a ground terminal; the impedance matching circuit 7 is configured to provide impedance matching between the amplifying transistor circuit 6 and the filter 2.
As shown in fig. 7, the impedance matching circuit 7 includes a first branch, a second branch, and a third branch arranged in parallel; the first branch circuit comprises a first capacitor C1 and a first inductor L1 which are arranged in series, the first capacitor C1 is connected with a connection node between the amplifying transistor circuit 6 and the filter 2, and the first inductor L1 is connected with a ground terminal; the second branch circuit comprises a second capacitor C2, one end of the second capacitor C2 is connected with the connection node between the amplifying transistor circuit 6 and the filter 2, and the other end is connected with the ground terminal; the third branch comprises a second inductor, i.e. one end of the second inductor is connected to the connection node between the amplifying transistor circuit 6 and the filter 2, and the other end is connected to the ground terminal. In this example, the first capacitor C1 and the second capacitor C2 may be set as adjustable capacitors with adjustable capacitance values; the second inductor L2 can be set as an adjustable inductor with adjustable inductance value, so as to adjust the capacitance values of the first capacitor C1 and the second capacitor C2 autonomously according to practical situations, and adjust the inductance value of the second inductor L2, thereby ensuring the impedance matching effect of the impedance matching circuit 7.
An embodiment of the present invention further relates to a wireless device, which includes the radio frequency front end device in the above embodiment. The radio frequency front end device mainly comprises a filter and a selection switch which are arranged on a substrate, wherein the selection switch is used for connecting a radio frequency antenna, the filter and the selection switch are connected on the substrate through a signal transmission line, a compensation metal wire is arranged on a wiring layer adjacent to the signal transmission line, the compensation metal wire and the signal transmission line are at least partially overlapped in the longitudinal projection, and the compensation metal wire is connected with a grounding end. The compensation metal wire in the radio frequency front-end device is at least partially overlapped with the projection of the signal transmission line in the longitudinal direction, and a parallel plate capacitor is formed in a matching mode, so that the inductive impedance presented by the overlong signal transmission line between the filter and the selection switch in the radio frequency front-end device is counteracted, and the impedance matching is realized; and no additional matching capacitor is needed to be configured on the signal transmission line, so that the total occupied area of the wireless device is not needed to be increased additionally, and the size requirement of the wireless device is met.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein.
Claims (9)
1. A radio frequency front-end device comprises a filter and a selection switch which are arranged on a substrate, wherein the selection switch is used for connecting a radio frequency antenna, and the filter and the selection switch are connected on the substrate through a signal transmission line;
the wiring layer where the compensation metal wire is located is an adjacent upper layer of the wiring layer where the signal transmission wire is located, or the wiring layer where the compensation metal wire is located is an adjacent lower layer of the wiring layer where the signal transmission wire is located.
2. The radio frequency front-end arrangement according to claim 1, wherein a projected overlapping area of the signal transmission line and the compensation metal line in the longitudinal direction is configured to be proportional to a length of the signal transmission line.
3. The radio frequency front end device according to claim 1, wherein a relative distance between a wiring layer in which the signal transmission line is located and a wiring layer in which the compensation metal line is located is configured to be inversely proportional to a length of the signal transmission line.
4. The radio frequency front-end arrangement of claim 1, wherein the compensation metal line cooperates with the signal transmission line to form a parallel plate capacitor; the selection switch comprises at least one transmission path, and each transmission path comprises a selection series radio frequency switch and a selection parallel radio frequency switch;
the selective series radio frequency switch is arranged between the parallel plate capacitor and the radio frequency antenna in series;
one end of the selective parallel radio frequency switch is connected with a connecting node between the parallel plate capacitor and the selective series radio frequency switch, or connected with a connecting node between two adjacent selective series radio frequency switches, or connected with a connecting node between the selective series radio frequency switch and the radio frequency antenna, and the other end of the selective parallel radio frequency switch is connected with a grounding end.
5. The radio frequency front end apparatus of claim 4, wherein the selective series radio frequency switch comprises a first series radio frequency switch, and the selective parallel radio frequency switch comprises a first parallel radio frequency switch and a second parallel radio frequency switch;
the first series radio frequency switch disposed in series between the parallel plate capacitor and the radio frequency antenna;
one end of the first parallel radio frequency switch is connected with a connection node between the parallel plate capacitor and the first series radio frequency switch, and the other end of the first parallel radio frequency switch is connected with a grounding end;
one end of the second parallel radio frequency switch is connected with a connection node between the first serial radio frequency switch and the radio frequency antenna, and the other end of the second parallel radio frequency switch is connected with a grounding end.
6. The radio frequency front end device according to claim 1, further comprising an amplifying transistor circuit, a first terminal of the amplifying transistor circuit serving as an input terminal of the radio frequency front end device, an output terminal of the amplifying transistor circuit being connected to the filter.
7. The radio frequency front end device according to claim 6, further comprising an impedance matching circuit having one end connected to a connection node between the amplifying transistor circuit and the filter and the other end connected to a ground terminal.
8. The radio frequency front end device according to claim 7, wherein the impedance matching circuit comprises a first branch, a second branch, and a third branch arranged in parallel;
the first branch circuit comprises a first capacitor and a first inductor which are arranged in series, the first capacitor is connected with a connection node between the amplifying transistor circuit and the filter, and the first inductor is connected with a grounding end;
the second branch circuit comprises a second capacitor, one end of the second capacitor is connected with a connection node between the amplifying transistor circuit and the filter, and the other end of the second capacitor is connected with a grounding end;
the third branch circuit comprises a second inductor, one end of the second inductor is connected with a connection node between the amplifying transistor circuit and the filter, and the other end of the second inductor is connected with a grounding end.
9. A wireless device comprising the radio frequency front end device of any one of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011193836.XA CN112422144B (en) | 2020-10-30 | 2020-10-30 | Radio frequency front-end device and wireless device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011193836.XA CN112422144B (en) | 2020-10-30 | 2020-10-30 | Radio frequency front-end device and wireless device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112422144A CN112422144A (en) | 2021-02-26 |
| CN112422144B true CN112422144B (en) | 2022-06-24 |
Family
ID=74828290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011193836.XA Active CN112422144B (en) | 2020-10-30 | 2020-10-30 | Radio frequency front-end device and wireless device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112422144B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113595579B (en) * | 2021-06-30 | 2023-03-24 | 锐石创芯(深圳)科技股份有限公司 | Radio frequency switch module and radio frequency switch circuit |
| CN117579017A (en) * | 2023-01-19 | 2024-02-20 | 北京芯溪半导体科技有限公司 | Filter, filter design method and communication equipment |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8538355B2 (en) * | 2010-04-19 | 2013-09-17 | Rf Micro Devices, Inc. | Quadrature power amplifier architecture |
| WO2017199690A1 (en) * | 2016-05-20 | 2017-11-23 | 株式会社村田製作所 | Impedance matching circuit, high-frequency front end circuit, and communication device |
| KR102659671B1 (en) * | 2016-11-01 | 2024-04-22 | 삼성전자주식회사 | Signal channel for improving crosstalk noise, module substrate and memory module including the same |
| CN107483073B (en) * | 2017-09-08 | 2021-04-23 | 台州市吉吉知识产权运营有限公司 | Radio frequency matching circuit and radio frequency system |
| CN107612568A (en) * | 2017-09-12 | 2018-01-19 | 上海斐讯数据通信技术有限公司 | A kind of radio-frequency front-end receiving circuit and its implementation |
| TWI671947B (en) * | 2018-06-08 | 2019-09-11 | 啟碁科技股份有限公司 | Antenna structure |
| CN111355500B (en) * | 2020-02-13 | 2021-11-23 | 芯朴科技(上海)有限公司 | Method for adjusting output power |
-
2020
- 2020-10-30 CN CN202011193836.XA patent/CN112422144B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN112422144A (en) | 2021-02-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111600559B (en) | Power amplifier output matching circuit, radio frequency front end module and wireless device | |
| US7417515B2 (en) | On-chip TX/RX antenna switching | |
| KR102060406B1 (en) | Offset device and its design method | |
| US6795714B1 (en) | Multiband antenna switcher | |
| EP0911985B1 (en) | Dual band transmitter with switchable matching circuit | |
| US20140028521A1 (en) | Tuner topology for wide bandwidth | |
| US7885614B2 (en) | Antenna switch with adaptive filter | |
| CN101662267A (en) | Branching filter, semiconductor integrated circuit device, and communication mobile terminal | |
| CN109600142B (en) | Front-end module and communication device | |
| CN103825571B (en) | Realize the radio-frequency antenna switch circuit of impedance matching | |
| WO2002073794A2 (en) | Switchless multi-resonant, multi-band power amplifier | |
| CN112422144B (en) | Radio frequency front-end device and wireless device | |
| CN102355223B (en) | Single-chip GSM (Global System for Mobile Communications) radio-frequency antenna switch module and GSM radio-frequency front end | |
| CN110474657B (en) | High-frequency transceiving switch integrated circuit and method thereof | |
| US7889023B2 (en) | Switching circuit for millimeter waveband control circuit | |
| CN101197461A (en) | Electronic device and RF module | |
| CN210899100U (en) | Reconfigurable broadband balun impedance matching circuit for power amplifier | |
| CN100361398C (en) | Impedance matching circuit for a multi-band radio frequency device | |
| US11362644B2 (en) | Switch module | |
| US20110215981A1 (en) | High frequency transmission module with improved harmonic feature | |
| US11329630B2 (en) | Switch module | |
| US10135134B2 (en) | Antenna system for receiving and transmitting wireless signals | |
| JP2006109084A (en) | Switching module and radio communication apparatus therewith | |
| CN113595579B (en) | Radio frequency switch module and radio frequency switch circuit | |
| KR101444551B1 (en) | Power amplifying circuit and front end module including the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Applicant after: Ruishi Chuangxin (Shenzhen) Technology Co.,Ltd. Address before: 518000 room 2001, building 3, Shenzhen new generation industrial park, 136 Zhongkang Road, Meidu community, Meilin street, Futian District, Shenzhen City, Guangdong Province Applicant before: AN ADVANCED RF POWER AMPLIFIER AND COMMUNICATION DEVICE |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |