CN109437086A - A kind of high q-factor resonant beam structure as secondary sensitive structure - Google Patents
A kind of high q-factor resonant beam structure as secondary sensitive structure Download PDFInfo
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- CN109437086A CN109437086A CN201811220044.XA CN201811220044A CN109437086A CN 109437086 A CN109437086 A CN 109437086A CN 201811220044 A CN201811220044 A CN 201811220044A CN 109437086 A CN109437086 A CN 109437086A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0027—Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0109—Bridges
Abstract
The invention discloses a kind of high q-factor resonant beam structures as secondary sensitive structure, belong to sensor technical field.The structure mainly includes the first resonance beam, the second resonance beam, the first support island, the second support island, third support island, the 4th support island and substrate；First resonance beam, the second resonance beam support island to be fixed on upper surface of substrate by both ends, and the two side by side parallel spaced apart is placed；First resonance beam, the second resonance beam keep self-oscillation, do reversal of vibrations perpendicular to upper surface of substrate, reduce resonance beam by supporting island to be transmitted to the energy that substrate dissipates away by vibration cancellation between the two, achieve the purpose that propose high q-factor.Relative to existing oscillation crosswise sensitive structure, structure design is simple, reduces difficulty of processing, high yield rate.
Description
Technical field
The invention belongs to micro electro mechanical system fields, and in particular to a kind of high q-factor resonance beam knot as secondary sensitive structure
Structure.
Background technique
Resonance type pressure sensor is that a kind of resonant mode for typically passing through change its equivalent stiffness sensitive pressure variation passes
Sensor, has small in size, and light-weight, low in energy consumption, measurement accuracy is high, and stability is good, easily produces in batches, directly output digital quantity,
The advantages that being easy to computer communication is always the emphasis of various countries' research and development.For direct sensitive mode, pressure is directly acted on
In on resonance sensitive structure, change its equivalent stiffness；For indirect sensitive mode, including two sensitive links, i.e. direct feeling
Sensitive structure of pressure and the secondary sensitive structure for experiencing pressure indirectly.Secondary sensitive structure is mostly that simple both-end is clamped
Beam resonance sensitive structure, pressure are converted to the concentrated force acted on resonance sensitive structure (F) by a sensitive structure, are changed
The frequency of resonance sensitive structure.The indirect sensitive pressure of resonance sensitive structure is not interacted by measuring pressure with resonance sensitive structure,
Resonance sensitive structure can be packaged in vacuum, be conducive to the high quality factor for keeping sensitive structure, made resonant mode pressure sensing
Device has good job specification and performance indicator.
Currently, there are many scientific research institutions to carry out correlative study and existing Related product appearance both at home and abroad.It is typical to produce
Druck company, Pin You Britain utilizes " butterfly beam " structure of dense boron self-stopping technology lithographic technique production, is examined using static excitation/capacitor
The working method of survey, secondary sensitive structure are made of two intermediate rectangular slabs connected and V-arrangement supporting beam, mode of vibration two
The turn-back of rectangular slab, Q value is greater than 10000 under 0.133Pa vacuum, since secondary sensitive structure direction of vibration is perpendicular to pressure
Sensitive diaphragm, secondary sensitive structure pass through presser sensor diaphragm and extraneous generation energy coupling；Meanwhile dense boron self-stopping technology etching knot
The technological problems such as the internal stress of structure itself and thickness also limit its application；The Yokogawa of Japan is also in the nineties in last century
Phase develops and produces a kind of electromagnetic excitation/electromagnetic detection silicon resonance type differential pressure pickup, by 6.8mm × 6.8mm ×
Pressure-sensitive diaphragm is made on the monocrystalline silicon body of 0.5mm, two H-shaped silicon resonance beams are made using extension boron-doping technology in diaphragm upper surface
(5 μm of 1200 μ m, 20 μ m), one is located at diaphragm center, another is located at diaphragm edge, and the compound of pressure difference is experienced in formation
Body, silicon beam are encapsulated in that parital vacuum is intracavitary, and Q value is up to 50000 by reacting sealing technique, it is contemplated that must be additional constant
Magnetic field, sensor are difficult to realize be miniaturized, and its selective epitaxial growth polysilicon membrane needs to control stringent technique ginseng
The quality to guarantee film is counted, it is more demanding to MEMS processing technology level.
The airborne sensor branch company of the Schlumberger company in the U.S. had developed in 1991 a kind of static excitation/
The silicon resonance type pressure sensor of piezoresistive detection, core closes technology using silicon-silicon bond by upper lower silicon slice and is linked together, double
End clamped beam is produced on above diaphragm upper surface central pan, and Q value is 60000 after Vacuum Package.Due to resonance beam direction of vibration
Perpendicular to presser sensor diaphragm, inevitably there is energy coupling to a certain extent therebetween；Although above two biography
Sensor has been carried out the marketization, but it is common the problem is that structure is complicated, cost of manufacture is high, yield rate is relatively low,
According to the existing miromaching technical level in China, difficulty of processing is very big.
Domestic Chinese Academy of Sciences electron institute electromagnetic excitation silicon resonance type Study on pressure sensor since 2008, at present research and development altogether
Three kinds of electromagnetic excitation/electromagnetic detection silicon resonance type pressure sensors.The first resonator is three groups of H-shaped two-end fixed beams,
Q value is 10000 under vacuum, and second of resonator is three groups of double-ended tuning fork resonance beams, and Q value is greater than 10000 under vacuum.The third is
Improved three groups of double-ended tuning fork resonant beam structures work in testing pressure environment using four groups of H-shaped resonance beams and realize Differential Detection.
Q value is that Q value is 2600 under 1200,1kPa air pressure under normal pressure, and resonator q can change with testing pressure environmental change, no
Conducive to closed-loop control, sensor accuracy can be had an impact.The resonator and presser sensor diaphragm of three kinds of structures are all made of dense boron
Self-stopping technology lithographic technique integral production, resonator use lateral vibration to reduce the energy coupling between presser sensor diaphragm,
But structure domain is complicated, difficulty of processing is larger.Northwestern Polytechnical University's silicon resonance type pressure sensor since 2005 is ground
Study carefully.Develop within 2007 a kind of static excitation/capacitance detecting silicon resonance type pressure sensor of sandwich structure, resonator
For using the petal-like structures of anisotropic etching technology hollow out, Q value is 34 under normal pressure, and resonator direction of vibration is perpendicular to pressure
Sensitive diaphragm.It is subsequent and developed on the basis of early-stage study using silicon-on-insulator (SOI) deep silicon etching technology a kind of lateral
Dynamic balancing silicon micro mechanical resonance pressure sensor selects differential comb structure to design, using static excitation/capacitance detecting mode,
Resonator is of reciprocating vibration using lateral dynamic balancing, and Q value is that Q value is 50000 under 1250,5Pa vacuum under normal pressure.Above two structure
In the presence of structure is complicated, the problems such as manufacture craft and domain are more complicated, and difficulty of processing is big.
The research of BJ University of Aeronautics & Astronautics's silicon resonance type pressure sensor since early 1990s, grinds altogether at present
Two kinds of electric heating excitation/piezoresistive detection silicon resonance type pressure sensors are sent out.The first structure resonator is two-end fixed beam, very
The lower Q value of sky is 5195.Tang Zhangyang in 2011 it is further proposed that a kind of temperature self-compensation double resonance beam silicon resonance pressure sensor,
One of resonance beam is located at pressure-sensitive diaphragm upper surface center for sensitive pressure, and it is non-depressed that another resonance beam is located at edge
Power sensitizing range is used for compensation temperature.Although two kinds of sensor core structures are simple, two kinds of structure resonator direction of vibration are equal
Perpendicular to presser sensor diaphragm, since energy coupling between the two is interfered, the raising of sensor Q value is subject to certain restrictions.
Summary of the invention
The technical problem to be solved in the present invention are as follows: overcome the deficiencies of the prior art and provide that a kind of structure is simple, Q value is higher
The high q-factor resonant beam structure as secondary sensitive structure.
The present invention solve above-mentioned technical problem the technical solution adopted is that:
A kind of high q-factor resonant beam structure as secondary sensitive structure, by the first resonance beam 1, the second resonance beam 2, support
Island, substrate 3 form；First resonance beam 1, the second resonance beam 2 are parallel placed side by side；The both ends of first resonance beam 1 are individually fixed in
First support island 11, second supports 12 upper surface of island；Supporting island includes that the first support island 11, second supports island 12, third support
Island the 21, the 4th supports island 22；3 upper surface of substrate is plane；The both ends of first resonance beam 1 be individually fixed in the first support island 11,
Second support 12 upper surface of island；The both ends of second resonance beam 2 are individually fixed in third support island the 21, the 4th and support table on island 22
Face；First support island 11, second supports island 12, third support island 21 parallel with the 4th support 22 upper and lower surface of island and thickness phase
Together, 3 upper surface of substrate is fixed in lower surface；First resonance beam 1, the second resonance beam 2 are etched by same layer raw material, structure
Geomery is all the same, and thickness direction is vertical with 3 upper surface of substrate, and beam width is greater than thickness；First support island 11, second supports
Island 12, third support island the 21, the 4th support island 22 to be process by same layer material, and geomery is all the same.
First resonance beam 1,2 spacing distance of the second resonance beam are no more than 10 times of beam width；
First resonance beam 1, the second resonance beam 2 can etch the first resonance beam 1, in SOI wafer device layer
Two resonance beams, 2 shape, the silica of selective removal buried oxide layer obtain the girder construction on support island and suspension；
First resonance beam 1, the second resonance beam 2 can be processed using Si-Si bonding process, chosen soi wafer and carried out
Thinned, polishing forms beam film, and beam film and substrate 3 are bonded to together, anisotropic etching is utilized to obtain the girder construction to suspend；
First resonance beam 1, the second resonance beam 2 can be in the silicon wafer upper surface CVD growth polycrystalline for having sacrificial layer
Silicon thin film and the acquisition of the silica of selective removal part；
First resonance beam 1, the second resonance beam 2 can be prepared with graphene film；
The energisation mode of first resonance beam 1, the use of the second resonance beam 2 is static excitation, the detection side of use
Formula can be capacitance detecting, piezoresistive detection or piezoelectric detection；
The energisation mode of first resonance beam 1, the use of the second resonance beam 2 is electromagnetic excitation, the detection side of use
Formula can be piezoresistive detection, piezoelectric detection or electromagnetic detection；
The energisation mode of first resonance beam 1, the use of the second resonance beam 2 is piezoelectric excitation, the detection side of use
Formula can be piezoresistive detection, piezoelectric detection；
First resonance beam 1,2 zone of action length of the second resonance beam are L.
The principle of the present invention and the course of work: mechanical quality factor (Q value) is the most important of measurement resonator mechanical performance
Parameter, the height of resonator q, depending on the number of vibrational system energy loss, therefore, the Q value of sensor to be improved must
Corresponding measure must be taken during designing and manufacturing, and reduce the loss of resonator vibrational energy.
Shearing and Moment Influence that resonance beam two fixed ends region is generated in vibration processes by beam and deform, it is solid simultaneously
Branch region is by supporting island structure by beam vibration energy transmission to substrate.Substrate is directly contacted with air, it is possible to by excellent
Change sensitive structure design and reduces the energy by dissipating at support island to improve the Q value of resonance beam.
According to analysis, side by side parallel places two consistent resonance beams of parameter above substrate 3, and substrate 3 is using one kind in quilt
It is deformed under measurement effect, makes the structure for supporting island that relative displacement occurs, in actual work, exciting force amplitude phase suffered by the two
Together, contrary, resonance beam is reduced by the vibration cancellation of the two, the energy that substrate 3 dissipates away is transmitted to by support island,
To achieve the purpose that propose high q-factor.
The advantages of the present invention over the prior art are that:
(1) the high q-factor resonant beam structure that can be used as secondary sensitive structure, structure are devised the present invention is based on two-end fixed beam
Simply, relative to existing oscillation crosswise deep etching sensitive structure, anisotropic etching is carried out using soi wafer device layer and is obtained
Girder construction is obtained, difficulty of processing and cost, high yield rate are reduced；
(2) present invention uses unique double work girder construction, offsets resonance beam and substrate by double resonance beam reversal of vibrations
Between energy coupling, to achieve the purpose that propose high q-factor.
Detailed description of the invention
Fig. 1 is a kind of high q-factor resonant beam structure that can be used as secondary sensitive structure；
Fig. 2 is the axonometric drawing of resonant beam structure；
Fig. 3 is the face the a-a ' cross-sectional view of resonant beam structure；
Fig. 4 is resonant beam structure static excitation/piezoresistive detection circuit diagram；
Fig. 5 is the resonance beam overall structure with compensation beam；
Fig. 6 is static excitation/piezoresistive detection schematic diagram；
Fig. 7 is electromagnetic excitation/piezoresistive detection schematic diagram；
Fig. 8 is structure chart after processing is completed；
Fig. 9 is the first resonance beam 1, the second resonance beam 2 in the silicon wafer upper surface CVD growth polysilicon membrane for having sacrificial layer
And the schematic diagram that the silica of selective removal part obtains；
Figure 10 is structure top view after processing is completed；
Figure 11 is the schematic diagram that one group of resonance beam is arranged in non-sensitive pressure span above substrate 3；
Appended drawing reference meaning in figure are as follows: 1 is the first resonance beam, and 2 be the second resonance beam, and 11 be the first support island, and 12 be the
Two support islands, 21 support island for third, and 22 be the 4th support island, and 3 be substrate, and 13 be the first varistor, and 14 is pressure-sensitive for second
Resistance, 23 be third varistor, and 24 be the 4th varistor, and 4 be the first resonance beam of compensation, and 5 be to compensate the second resonance beam, 41
It is the second support of compensation island for the first support of compensation island, 42,51 support island for compensation third, and 52 be the 4th support island of compensation.
Specific embodiment
The present invention is discussed in detail below with reference to a kind of specific embodiment and its attached drawing.
The present embodiment is a kind of high q-factor resonant beam structure as secondary sensitive structure, humorous by the first resonance beam 1, second
Shake beam 2, support island and the composition of substrate 3；Supporting island includes that the first support island 11, second supports island 12, third to support island the 21, the 4th
Support island 22；First resonance beam 1, the second resonance beam 2 are etched by same layer raw material, and planform size is all the same, thick
It is vertical with 3 upper surface of substrate to spend direction, beam width is greater than thickness, and resonance beam zone of action length is L.First support island 11, the
Two support islands 12, third support island the 21, the 4th support island 22 to be process by same layer material, and geomery is all the same.
The present embodiment combination silicon resonance type pressure sensor is introduced, as shown in Figure 1, processed using SOI wafer,
I-shaped simple beam shape is etched in top layer silicon, the silica of selective removal buried oxide layer obtains support island 3 and suspension
Girder construction obtains substrate 3 in substrate silicon layer etching deep trouth；First resonance beam 1,2 side by side parallel of the second resonance beam are placed, interval distance
From 10 times no more than beam width.
The both ends of first resonance beam 1 are individually fixed in the first support island 11, second support 12 upper surface of island；Second resonance beam
2 both ends are individually fixed in third support island the 21, the 4th and support 22 upper surface of island；First support island 11, second supports island 12, the
Three support islands 21 are parallel with the 4th support 22 upper and lower surface of island and thickness is identical, and 3 upper surface of substrate is fixed in lower surface；First is humorous
Vibration beam 1, the second resonance beam 2 are etched by same layer raw material, and planform size is all the same, on thickness direction and substrate 3
Surface is vertical, and beam width is greater than thickness；First support island 11, second support island 12, third support island the 21, the 4th support island 22 by
It is process with layer material, geomery is all the same.
To guarantee the first resonance beam 1,2 vertical substrates of the second resonance beam, 3 upper surface reversal of vibrations, the vibrational excitation of the two can
Take a variety of implementations.For example static excitation/piezoresistive detection mode can be used, static excitation mode schematic illustration is as schemed
Shown in 4, static excitation is realized by electrode of substrate 3 itself, and it is consistent to be symmetrical arranged two parameters in 1 liang of end surfaces of the first resonance beam
Varistor to (the first varistor 13, the second varistor 14), 2 liang of end surfaces of the second resonance beam be symmetrical arranged two ginseng
The consistent varistor of number is to (third varistor 23, the 4th varistor 24), and all pad locations are also relative to beam midpoint
It keeps symmetrical, the output signal of two varistors is handled using differential amplifier circuit, realizes the counteracting of coupled interference, the two is applied
Add static electric excitation signal polarity on the contrary, static excitation/piezoresistive detection circuit diagram is as shown in Figure 5.
Electromagnetic excitation/piezoresistive detection mode can also be used, electromagnetic excitation mode schematic illustration is as shown in fig. 6, humorous
Shake beam surface covering conductive film, is placed in the magnetic field in the direction yIn, pass through ac-excited electricity in conductive film
Stream:
ix(t)=Ixcosωt
It can produce alternating electromagnetic force (Ampere force), realize ac-excited.
The conducting wire infinitesimal that x position length is dx is by power member:
It is acted on by power member, which is the direction z (normal direction) alternating force.Then resonance beam is distributed masterpiece by normal direction alternation
With generation normal vibration.Pass through contrary ac-excited electricity in by the first resonance beam 1,2 conductive film of the second resonance beam
Stream generates the alternating electromagnetic force of opposite in phase, realizes twin beams reversal of vibrations, electromagnetic excitation/piezoresistive detection schematic diagram such as Fig. 7 institute
Show.
First resonance beam 1, the second resonance beam 2 can also be processed using Si-Si bonding process, etch deep trouth in silicon chip back side
Substrate 3 is obtained, soi wafer is chosen and is thinned, polishes to form beam film, beam film and substrate 3 are bonded to together, using each to different
Property etching obtain the girder construction to suspend, support island is linked to be an entirety in the structure, specific process detail can refer to it is existing at
Ripe technique, structure after processing is completed is as shown in figure 8, top view refers to Figure 10；
First resonance beam 1, the second resonance beam 2 can also be thin in the silicon wafer upper surface CVD growth polysilicon with sacrificial layer
Film and the acquisition of the silica of selective removal part, as shown in figure 9, etching shallow slot in silicon chip surface, deposit silica is simultaneously
Polishing polishes, and uses CVD growth polysilicon membrane in upper surface, the silica of selective removal part obtains the resonance to suspend
Girder construction, specific process detail can refer to existing mature technology, support island 3 to be linked to be an entirety in the structure, structure is bowed
View is with reference also to Figure 10；
First resonance beam 1, the second resonance beam 2 can also be prepared with graphene film；
As shown in figure 11, one group of resonance beam can be set for non-sensitive pressure span above substrate 3, it is insensitive by measuring pressure
Variation, the real-time change of sensitive environmental factor such as temperature identical with resonant operational beam etc., resonance compensation beam and work beam
Structural parameters and excitation detection mode are consistent, and when detection can be obtained humorous by the frequency difference of two groups of resonance beams of Difference Calculation
The ideal value of the resonance frequency of vibration work beam, achievees the purpose that real-time compensation.
Claims (9)
1. a kind of high q-factor resonant beam structure as secondary sensitive structure, it is characterised in that: it is by the first resonance beam (1), second
Resonance beam (2), support island, substrate (3) composition；First resonance beam (1), the second resonance beam (2) side by side parallel are placed；Support island packet
Include the first support island (11), the second support island (12), third support island (21), the 4th support island (22)；Substrate (3) upper surface is
Plane；The both ends of first resonance beam (1) are individually fixed in the first support island (11), second support island (12) upper surface；Second is humorous
The both ends of vibration beam (2) are individually fixed in third support island (21), the 4th support island (22) upper surface；First support island (11), the
Two supports island (12), third support island (21) is parallel with the 4th support island (22) upper and lower surface and thickness is identical, and lower surface is fixed
In substrate (3) upper surface；First resonance beam (1), the second resonance beam (2) are etched by same layer raw material, planform ruler
Very little all the same, thickness direction is vertical with substrate (3) upper surface, and beam width is greater than thickness；First support island (11), the second support island
(12), third support island (21), the 4th support island (22) are process by same layer material, and geomery is all the same.
2. a kind of high q-factor resonant beam structure as secondary sensitive structure according to claim 1, it is characterised in that: institute
The first resonance beam (1) for stating, the second resonance beam (2) spacing distance are no more than 10 times of beam width.
3. a kind of high q-factor resonant beam structure as secondary sensitive structure according to claim 1, it is characterised in that: institute
The first resonance beam (1) for stating, the second resonance beam (2) etch the first resonance beam (1), the second resonance beam in SOI wafer device layer
(2) shape, the silica of selective removal buried oxide layer obtain the girder construction on support island and suspension.
4. a kind of high q-factor resonant beam structure as secondary sensitive structure according to claim 1, it is characterised in that: institute
The first resonance beam (1), the second resonance beam (2) stated are processed using Si-Si bonding process, are chosen soi wafer and are thinned, are polished
Beam film is formed, beam film and substrate (3) are bonded to together, the girder construction to suspend is obtained using anisotropic etching.
5. a kind of high q-factor resonant beam structure as secondary sensitive structure according to claim 1, it is characterised in that: institute
The first resonance beam (1), the second resonance beam (2) stated are having the silicon wafer upper surface CVD growth polysilicon membrane of sacrificial layer and are selecting
The silica of selecting property removal part obtains.
6. a kind of high q-factor resonant beam structure as secondary sensitive structure according to claim 1, it is characterised in that: institute
The first resonance beam (1), the second resonance beam (2) stated are prepared with graphene film.
7. a kind of high q-factor resonant beam structure as secondary sensitive structure according to claim 1, it is characterised in that: institute
The energisation mode that the first resonance beam (1), the second resonance beam (2) stated use is static excitation, and the detection mode used is electricity
Hold detection, piezoresistive detection or piezoelectric detection.
8. a kind of high q-factor resonant beam structure as secondary sensitive structure according to claim 1, it is characterised in that: institute
The energisation mode that the first resonance beam (1), the second resonance beam (2) stated use is electromagnetic excitation, and the detection mode used is pressure
Resistance detection, piezoelectric detection or electromagnetic detection.
9. a kind of high q-factor resonant beam structure as secondary sensitive structure according to claim 1, it is characterised in that: institute
The energisation mode that the first resonance beam (1), the second resonance beam (2) stated use is piezoelectric excitation, and the detection mode used is pressure
Resistance detection, piezoelectric detection.
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Application publication date: 20190308 |