CN109428500B - 功率转换器装置 - Google Patents
功率转换器装置 Download PDFInfo
- Publication number
- CN109428500B CN109428500B CN201811030328.2A CN201811030328A CN109428500B CN 109428500 B CN109428500 B CN 109428500B CN 201811030328 A CN201811030328 A CN 201811030328A CN 109428500 B CN109428500 B CN 109428500B
- Authority
- CN
- China
- Prior art keywords
- power converter
- converter device
- resistor
- electrically connected
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/40—Testing power supplies
- G01R31/42—AC power supplies
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05567—Disposition the external layer being at least partially embedded in the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inverter Devices (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102017120356.7A DE102017120356A1 (de) | 2017-09-05 | 2017-09-05 | Stromrichtereinrichtung |
DE102017120356.7 | 2017-09-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109428500A CN109428500A (zh) | 2019-03-05 |
CN109428500B true CN109428500B (zh) | 2023-09-19 |
Family
ID=65363532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811030328.2A Active CN109428500B (zh) | 2017-09-05 | 2018-09-05 | 功率转换器装置 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN109428500B (de) |
DE (1) | DE102017120356A1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021127644A1 (de) | 2021-10-25 | 2023-04-27 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Überwachung des Betriebs einer Stromrichtereinrichtung und Stromrichteranordnung |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6434181A (en) * | 1987-07-30 | 1989-02-03 | Mitsubishi Electric Corp | Dc voltage detection circuit of invertor device |
CN1691476A (zh) * | 2004-04-27 | 2005-11-02 | 三洋电机株式会社 | 逆变器模块 |
DE102012109283A1 (de) * | 2012-09-28 | 2014-04-03 | Siemens Aktiengesellschaft | Stromrichter mit Zusatzschaltung, sowie Verfahren zum Betreiben eines Stromrichters |
DE102014112517B3 (de) * | 2014-09-01 | 2015-08-27 | Semikron Elektronik Gmbh & Co. Kg | Stromrichtereinrichtung |
CN106787622A (zh) * | 2016-12-05 | 2017-05-31 | 广州金升阳科技有限公司 | 一种电压采样方法及电压采样电路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004180281A (ja) * | 2002-11-13 | 2004-06-24 | Renesas Technology Corp | 直交ミキサ回路及びそれを用いた携帯端末 |
DE102006062101B4 (de) * | 2006-12-30 | 2017-10-05 | Conti Temic Microelectronic Gmbh | Vorrichtung zum Entladen des Zwischenkreiskondensators der Leistungselektronik eines Hybridantriebssystems |
DE102008010978A1 (de) | 2008-02-25 | 2009-08-27 | Robert Bosch Gmbh | Entladeschaltung für Hochspannungsnetze |
EP2308088A1 (de) * | 2008-07-02 | 2011-04-13 | Nxp B.V. | Verbesserter meander-widerstand |
-
2017
- 2017-09-05 DE DE102017120356.7A patent/DE102017120356A1/de active Pending
-
2018
- 2018-09-05 CN CN201811030328.2A patent/CN109428500B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6434181A (en) * | 1987-07-30 | 1989-02-03 | Mitsubishi Electric Corp | Dc voltage detection circuit of invertor device |
CN1691476A (zh) * | 2004-04-27 | 2005-11-02 | 三洋电机株式会社 | 逆变器模块 |
DE102012109283A1 (de) * | 2012-09-28 | 2014-04-03 | Siemens Aktiengesellschaft | Stromrichter mit Zusatzschaltung, sowie Verfahren zum Betreiben eines Stromrichters |
DE102014112517B3 (de) * | 2014-09-01 | 2015-08-27 | Semikron Elektronik Gmbh & Co. Kg | Stromrichtereinrichtung |
CN106787622A (zh) * | 2016-12-05 | 2017-05-31 | 广州金升阳科技有限公司 | 一种电压采样方法及电压采样电路 |
Also Published As
Publication number | Publication date |
---|---|
CN109428500A (zh) | 2019-03-05 |
DE102017120356A1 (de) | 2019-03-07 |
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GR01 | Patent grant | ||
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