CN109427606A - 用于老化测试的半导体装置结构及其方法 - Google Patents

用于老化测试的半导体装置结构及其方法 Download PDF

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CN109427606A
CN109427606A CN201810967487.9A CN201810967487A CN109427606A CN 109427606 A CN109427606 A CN 109427606A CN 201810967487 A CN201810967487 A CN 201810967487A CN 109427606 A CN109427606 A CN 109427606A
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semiconductor device
height
electric connection
device structure
engagement pad
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CN109427606B (zh
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M·E·塔特尔
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Micron Technology Inc
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Micron Technology Inc
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    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
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Abstract

本申请涉及用于老化测试的半导体装置结构及其方法。提供一种半导体装置结构。所述半导体装置结构包含衬底、从所述衬底的上表面朝上延伸第一高度的电连接结构、以及以电气方式设置在所述衬底的所述上表面上的接触垫。所述接触垫具有焊料可润湿表面，所述焊料可润湿表面具有被配置成支撑具有至少是所述第一高度的两倍的第二高度的焊球的区域。所述半导体装置结构进一步包含熔丝元件，其具有电耦合到所述电连接结构的第一端和电耦合到所述接触垫的第二端。

Description

用于老化测试的半导体装置结构及其方法
技术领域
本公开大体上涉及半导体装置，且更具体地，涉及用于老化测试的半导体装置结构及其方法。
背景技术
包含存储器芯片、微处理器芯片和成像器芯片的封装的半导体裸片通常包含安装在衬底上且封入塑料保护盖或由导热盖子覆盖的一或多个半导体裸片。裸片可以包含功能特征，例如存储器单元、处理器电路和/或成像器装置，以及电连接到所述功能特征的接合垫。接合垫可以电连接到保护盖外部的端子，以允许裸片连接到更高层级电路。
半导体制造商不断地减小裸片封装的大小以适应电子装置的空间限制，同时还增加每个封装的功能容量以满足操作参数。一种用于增加半导体封装的功能容量而基本上不增加由此覆盖的表面积(即封装的“占用面积”)的方法是在单个封装中将多个半导体裸片竖直堆叠在彼此之上。这种竖直堆叠封装中的裸片可以通过将各个裸片的接合垫与相邻裸片的接合垫电耦合而互连。在预期电耦合这种裸片时，裸片的接合垫可以设置有电连接结构，例如在裸片被组装到封装中之前从裸片的接合垫朝上延伸的柱。
为了避免封装有缺陷的或“不良的”裸片与数个起作用的或“良好的”裸片(并由此可能呈现出封装中的所有裸片都不可用)，可以在组装之前测试裸片以识别良好和不良的裸片。用于识别已知的良好裸片的一个测试是老化测试，其中裸片的多个(例如，许多甚至全部)电路任选地在升高的装置温度下(例如，通过在老化炉中或使用另一加热设备进行老化测试来提供)被延长持续时间。由于半导体裸片内的集成电路的复杂性不断增加，以及用于互连多个裸片的电连接结构的数量，电连接结构的尺寸继续缩小到这样的程度，即将电连接结构电连接到测试装置(例如，具有探针引脚等)的动作会不可恢复地损坏电连接结构。因此，期望提供用于以防止损坏用于连接半导体装置封装中的裸片的电连接结构的方式来测试半导体装置的方法和结构。
发明内容
本申请的一个方面涉及一种半导体装置结构。在一个实施例中，一种半导体装置结构包括：衬底；电连接结构，其从所述衬底的上表面朝上延伸第一高度；以电气方式设置在所述衬底的所述上表面上的接触垫，所述接触垫具有焊料可润湿表面，所述焊料可润湿表面具有被配置成支撑具有至少是所述第一高度的两倍的第二高度的焊球的区域；以及熔丝元件，其具有电耦合到所述电连接结构的第一端和电耦合到所述接触垫的第二端。
本申请的另一方面涉及一种半导体装置结构。在一个实施例中，一种半导体装置结构包括：衬底；多个电连接结构，其从所述衬底的上表面朝上延伸第一高度；在所述多个电连接结构的相对侧设置在所述衬底的所述上表面上的多个接触垫，每个接触垫具有焊料可润湿表面，所述焊料可润湿表面具有被配置成支撑具有至少是所述第一高度的两倍的第二高度的焊球的区域；以及多个熔丝元件，每个熔丝元件具有电耦合到所述多个电连接结构中的对应一者的第一端和电耦合到所述多个接触垫中的对应一者的第二端。
本申请的又另一方面涉及一种测试包含衬底的半导体装置的方法，所述衬底具有从所述衬底的上表面朝上延伸第一高度的多个电连接结构。在一个实施例中，所述方法包括：在电耦合到所述多个电连接结构中的对应者并且设置在所述衬底的所述上表面上的多个接触垫上安置相应的多个焊球，所述多个焊球具有至少是所述第一高度的两倍的第二高度；将测试结构连接到所述多个焊球；以及通过所述测试结构以电气方式测试所述半导体装置的电路。
附图说明
图1示出根据本发明技术的实施例的半导体装置。
图2A-2E示出根据本发明技术的实施例在制造和测试的各个阶段的半导体装置。
图3是示出根据本发明技术的实施例测试半导体装置的方法的流程图。
图4是示出包含根据本发明技术的实施例配置的半导体装置的系统的示意图。
具体实施方式
在以下描述中，论述了众多具体细节以提供对本发明技术的实施例的透彻和启发性描述。然而，相关领域的技术人员将认识到，可以在并无具体细节中的一或多者的情况下实践本公开。在其它情况下，并不示出或并不详细地描述常常与半导体装置相关联的熟知结构或操作，以免混淆技术的其它方面。一般来说，应理解，除了本文中所公开的那些具体实施例之外的各种其它装置、系统和方法可在本发明技术的范围内。
如上所述，半导体装置可以设计有小而精细的电连接结构，由于它们的小尺寸和/或紧密间隔而对装置测试提出挑战，尤其是同时测试多个这样的电连接结构时(例如，在老化测试期间)。因此，根据本发明技术的半导体装置的若干实施例可以为半导体装置提供用于老化测试的结构。
本发明技术的若干实施例涉及包括电连接结构和接触垫的半导体装置。在一个实施例中，半导体装置结构包含衬底、从衬底的上表面朝上延伸第一高度的电连接结构、以及以电气方式设置在衬底的上表面上的接触垫。接触垫具有焊料可润湿表面，所述焊料可润湿表面具有被配置成支撑具有至少是第一高度的两倍的第二高度的焊球的区域。半导体装置结构进一步包含熔丝元件，其具有电耦合到电连接结构的第一端和电耦合到接触垫的第二端。
下文描述半导体装置的若干实施例的具体细节。术语“半导体装置”通常是指包含半导体材料的固态装置。半导体装置可以包含例如从晶片或衬底单一化的半导体衬底、晶片或裸片。在整个本公开中，通常在半导体裸片的上下文中描述半导体装置；然而，半导体装置不限于半导体裸片。
术语“半导体装置封装”可以指一或多个半导体装置并入到共同封装中的布置。半导体封装可以包含部分或完全地囊封至少一个半导体装置的外壳或壳体。半导体装置封装还可以包含携载一或多个半导体装置且附接到壳体或以其它方式并入到壳体中的插入式衬底。术语“半导体装置组合件”可以指一或多个半导体装置、半导体装置封装和/或衬底(例如，插入件、支撑件或其它合适的衬底)的组合件。半导体装置组合件可以例如以离散封装形式、条带或矩阵形式，和/或晶片面板形式制造。如本文中所使用，术语“竖直”、“侧向”、“上部”和“下部”可指半导体装置或装置组合件中的特征鉴于图中示出的定向的相对方向或位置。例如，“上部”或“最上”可以分别指相比另一特征或同一特征的部分，定位成更接近或最接近于页面顶部的特征。然而，这些术语应广泛地理解为包含具有其它定向的半导体装置，所述定向例如倒置或倾斜定向，其中顶部/底部、上面/下面、上方/下方、向上/向下，和左侧/右侧可取决于定向而互换。
图1示出根据本发明技术的实施例的半导体装置100。半导体装置100包含从衬底110的上表面朝上延伸的多个电连接结构120。为便于测试电连接结构120电耦合到的半导体装置100内的电路，半导体装置100进一步包含多个接触垫130，每个接触垫电耦合到多个电连接结构120中的对应一者。如上文所述，电连接结构120可以按此类小尺寸和/或以此类高密度制造，使得直接将测试设备连接到电连接结构120可能不可恢复地损坏所述电连接结构(例如，使所述电连接结构不适合将半导体装置100电连接到半导体装置封装中的另一装置)。通过将接触垫130电耦合到具有迹线140(例如，形成在一或多个重布层中)的电连接结构120，测试设备可以替代地连接到接触垫130，从而保护电连接结构120以防损坏。
虽然可以分开测试半导体装置100的电路(例如，通过用测试设备同时连接到仅一个或几个接触垫130)，但是在单一操作中测试半导体装置100的所有电路(例如，通过同时连接到所有电路)可以高度保证裸片具备完整功能性。为了确保待测试的所有电路以可靠的方式电耦合到测试设备，可能需要使用比探针引脚与接触垫130的机械相互作用所提供的连接更稳定的连接。根据本发明技术的一个方面，半导体装置100可以通过稳定的、半永久性焊点电耦合到测试设备，所述焊点可以在如下文更详细阐述的充分测试(例如，老化测试)的持续时间维持电连接性。
转向图2A，示出根据本发明技术的实施例的半导体装置200的部分横截面。如参考图2A可见，半导体装置200包含衬底202，在所述衬底上设置电连接结构210和212。电连接结构210和212从衬底202的上表面朝上延伸高度h1。根据本发明技术的实施例，电连接结构210和212可以是分别生长在垫220和222上的柱，用于连接到半导体装置封装中的另一个半导体装置。例如，电连接结构210和212可以是铜微柱，各自具有介于约5到30μm之间的高度h1和介于约5到30μm之间的直径。由于电连接结构210和212的极小尺寸，因此直接将所述电连接结构电耦合到测试装置(例如，探针引脚、测试板等)可能导致不可接受的损坏量(例如，将阻止与半导体装置200电耦合到的半导体封装中的其它装置进行可靠电连接)。因此，半导体装置200包含接触垫230和232，以相应迹线240和242电耦合到电连接结构210和212的对应者
为便于可靠电连接到测试装置(例如，用于进行老化测试的测试板)，接触垫230和232各自具有被配置成支撑高度大于电连接结构210和212的高度h1的焊球的区域(例如，形状和大小)，使得可以防止测试装置接触(并且潜在地损坏)电连接结构210和212。接触垫230和232可以由焊料可润湿材料(例如，铜、镍、其合金等)形成或涂覆有焊料可润湿材料以便于形成并支撑焊球。例如，接触垫230和232可以各自具有被配置成支撑高度至少是电连接结构210和212的高度h1的两倍的已知材料焊球的区域(例如，直径d1的圆形形状)。
如所属领域的技术人员将容易了解，在本发明技术的其它实施例中，接触垫230和232无需是圆形的，或甚至都具有相同的形状或大小。此外，接触垫230和232被配置成支撑的焊球的高度可以是除电连接结构210和212的高度h1的两倍高度之外的高度。例如，在另一实施例中，接触垫230和232可以各自具有被配置成支撑高度至少是电连接结构210和212的高度h1的三倍的焊球的区域(例如，任何数量的不同多边形、椭圆形或具有不同表面积的不规则形状中的一或多者)。虽然在前述实例中，接触垫已经被描述为具有被配置成支撑高度至少是电连接结构高度的两倍或三倍的焊球的区域，但所属领域的技术人员将容易了解，接触垫可以具有被配置成支撑具有多种其它高度中的任一者的焊球的区域。例如，接触垫可以具有被配置成支撑高度至少大于电连接结构的高度、高度至少比电连接结构的高度大50％、高度至少比电连接结构的高度大300％等等的焊球的区域。通过为接触垫提供被配置成支撑具有更大高度的焊球的区域，可以增加测试结构与电连接结构之间的距离，但是以更大裸片区域为代价。因此，接触垫的区域(例如，形状和大小)可以被配置成在安全地间隔测试结构和电连接结构与接触垫所消耗的裸片区域之间达到所要的平衡。
转向图2B，示出根据本发明技术的实施例当已经在其接触垫上形成焊球之后半导体装置200的部分横截面。如参考图2B可见，接触垫230和232的区域(例如，焊料可润湿材料的大小和/或形状)使得形成于其上的焊球250和252的高度h2足以防止连接到其上的测试装置接触电连接结构210和212。例如，如果测试装置包含具有处于平面表面中的多个接触垫的测试板，则焊球250和252的高度h2可以确保所述平面表面保持支撑在电连接结构210和212的最上表面上方和/或竖直地与所述最上表面分离。如果测试装置包含多个引脚、柱或其它突出结构，则焊球250和252的高度h2可以确保突出结构能够可靠地耦合到焊料而不接触电连接结构210和212。
图2C示出根据本发明技术的实施例当测试板已经连接到在其上形成的焊球之后半导体装置200的部分横截面。如参考图2C可见，测试板204包含对应于半导体装置200的接触垫230和232(例如，与其对准)的接触垫234和236。测试板204的接触垫234和236可以(例如，经由导线、通孔或其它重布结构)连接到被配置成测试半导体装置200的性能和可靠性的电路。使用通过稳定焊料连接而连接到半导体装置200的测试板204可以允许在不干扰电连接结构210和212的情况下在老化炉中进行半导体装置200的老化测试，以确保半导体装置200是已知良好的裸片。
在图2C所示的本实施例中，焊球250和252设置在电连接结构210和212的相对的外围侧上。这种布置允许焊球250和252支撑电连接结构210和212的相对侧上的基本上平面的测试结构(例如，测试板204)，使得测试结构可以稳定地“桥接”电连接结构210和212。返回参考图1，可以看出围绕其中设置有电连接结构120的中心区域在外围提供接触垫130可以在多个旋转轴上提供稳定性(例如，防止测试结构围绕图1的平面中的任一正交轴旋转)。当然，虽然前述示例性实施例已经示出了电连接结构的相对侧上的接触垫，但是所属领域的技术人员将容易理解，可以使用接触垫和电连接结构的其它布置。例如，可以在电连接结构的范围中、或者在相邻的电连接结构的单侧上(例如，当测试结构不在电连接结构上延伸时，或当电连接结构的相对侧包含除设置在接触垫上的焊球之外的一些支撑件时)提供额外的接触垫(例如，以提供抵抗测试结构的弯曲的额外稳定性)。
再次参考图2C，在焊球250和252已经电连接到测试板204的接触垫234和236并且固化的情况下，在测试板204的表面与电连接结构210和212最上部分之间保留间隙g1。可以通过改变半导体装置的接触垫230和232的区域(例如，形状和大小)(这将改变每个接触垫230和232能够支撑的焊球250和252的高度h2)、电连接结构210和212的高度h1、用于形成焊球250和252的焊料材料的量、以及测试板的接触垫234和236的区域(例如，形状和大小)来控制此间隙g1的量。通过设计半导体装置200和测试板204以提供足够大的间隙g1来适应制造过程中这些因素的变化，可以防止测试板204或其它测试结构在测试操作期间接触电连接结构210和212，从而保护它们以用于在半导体装置200与半导体装置封装中的其它装置之间形成互连。
根据本发明技术的一个方面，在通过将测试设备(例如，老化板、测试探针等)电耦合到具有稳定且半永久性焊点的接触垫230和232来测试半导体装置200的电路之后，通过回焊焊球250和252并移除测试设备，可以使测试设备与半导体装置200断开连接。取决于测试设备用于与焊球250和252接合的焊料可润湿表面区域的多少，移除测试设备可带走焊球250和252的一些焊料材料。例如，图2D示出根据本发明技术的实施例在已从其上移除测试板204并随其带走其上形成的焊球的一些焊料材料之后半导体装置200的部分横截面。可能需要从接触垫230和232移除剩余的焊料材料254和256，以防止可能的污染或便于后续处理步骤。因此，可以使用许多已知的焊料移除方法中的任何一种从接触垫230和232移除剩余的焊料材料254和256，包含真空吸附、芯吸、刮擦等。
如果接触垫230和232保持电耦合到半导体装置200中的电路，电连接结构210和212也电耦合到所述电路，则不期望的寄生电容、电感和/或其它不期望的效用可能影响那些电路的性能。因此，根据本发明技术的一个方面，可能期望将接触垫230和232与电连接结构210和212电分离(例如，并因此与电连接结构210和212也电耦合到的半导体装置200中的电路电分离)。在这方面，迹线240和242可以是可熔迹线，或者包含可熔断部分，使得接触垫230和232以及可能的迹线240和242本身的一些部分可以与半导体装置200中的电路电隔离。例如，图2E示出在迹线240和242已经熔融以将接触垫230和232(以及迹线240和242的一部分)与电连接结构210和212(以及与电连接结构210和212所电耦合到的电路)断开之后半导体装置200的部分横截面。通过尽可能地将迹线240和242熔融为靠近电连接结构210和212，可以使迹线240和242的寄生电容、电感和其它不期望的电特性最小化。
虽然在前述示例性实施例中，迹线240和242已经被示出为可熔迹线(例如，包含被配置成电流熔断、激光熔断等的熔丝元件)，但是还可以替代可熔迹线或结合可熔迹线使用其它公知机构来断开半导体装置中的电路元件。例如，如果使用不可熔的迹线，则可以通过激光切割、蚀刻或以其它方式机械地移除一部分迹线材料以电隔离接触垫和剩余的迹线材料来使接触垫(以及迹线的至少一部分)与电连接结构电分离。
图3是示出根据本发明技术的实施例测试具有从衬底上表面朝上延伸第一高度的多个电连接结构的半导体装置的方法的流程图。所述方法包含在电耦合到多个电连接结构中的相应电连接结构的多个接触垫上设置相应的多个焊球，所述多个焊球具有至少是第一高度的两倍的第二高度(框302)。所述方法还包含将测试结构连接到多个焊球(框304)，并通过测试结构来电测试半导体装置的电路(框30)。所述方法还可以包含从接触垫移除测试结构(例如，通过回焊由焊球形成的焊点)和焊料材料(例如，通过芯吸、真空抽吸等)(框308)。所述方法还可以包含将多个接触垫与多个电连接结构电分离(框310)。
上文参考图1-3描述的任何一个半导体装置可以结合到无数更大和/或更复杂系统中的任何一者中，其代表性实例是图4中示意性示出的系统400。系统400可以包含半导体装置组合件402、电源404、驱动器406、处理器408和/或其它子系统或组件410。半导体装置组合件402包含的特征可以大致类似于上文参考图1-3描述的半导体装置的特征。得到的系统400可以执行各种功能中的任何功能，例如存储器存储、数据处理和/或其它合适的功能。因此，代表性系统400可以包含但不限于手持式装置(例如，移动电话、平板电脑、数字阅读器和数字音频播放器)、计算机、车辆、电器和其它产品。系统400的组件可容纳于单个单元中或分布在多个互连的单元中(例如，通过通信网络)。系统400的组件还可包含远程装置和多种计算机可读媒体中的任一种。
从上文中将了解，本文中已经出于说明的目的描述了本发明的具体实施例，但是可以在不偏离本发明的精神和范围的情况下进行各种修改。因此，本发明不受除所附权利要求书之外的限制。

Claims (24)

1.一种半导体装置结构，其包括：
衬底；
电连接结构，其从所述衬底的上表面朝上延伸第一高度；
以电气方式设置在所述衬底的所述上表面上的接触垫，所述接触垫具有焊料可润湿表面，所述焊料可润湿表面具有被配置成支撑具有至少是所述第一高度的两倍的第二高度的焊球的区域；以及
熔丝元件，其具有电耦合到所述电连接结构的第一端和电耦合到所述接触垫的第二端。
2.根据权利要求1所述的半导体装置结构，其中所述第一高度介于约5到30μm之间。
3.根据权利要求1所述的半导体装置结构，其中所述第二高度大于约50μm。
4.根据权利要求1所述的半导体装置结构，其中所述电连接结构是直径介于约5到30μm之间的铜柱。
5.根据权利要求1所述的半导体装置结构，其中所述接触垫的所述区域是直径介于约10到50μm之间的圆圈。
6.根据权利要求1所述的半导体装置结构，其中所述熔丝元件是可激光熔断的熔丝。
7.根据权利要求6所述的半导体装置结构，其中所述可激光熔断的熔丝靠近所述电连接结构。
8.根据权利要求1所述的半导体装置结构，其中所述熔丝元件是熔断的熔丝元件。
9.一种半导体装置结构，其包括：
衬底；
多个电连接结构，其从所述衬底的上表面朝上延伸第一高度；
在所述多个电连接结构的相对侧设置在所述衬底的所述上表面上的多个接触垫，每个接触垫具有焊料可润湿表面，所述焊料可润湿表面具有被配置成支撑具有至少是所述第一高度的两倍的第二高度的焊球的区域；以及
多个熔丝元件，每个熔丝元件具有电耦合到所述多个电连接结构中的对应一者的第一端和电耦合到所述多个接触垫中的对应一者的第二端。
10.根据权利要求9所述的半导体装置结构，其中所述第一高度介于约5到30μm之间。
11.根据权利要求9所述的半导体装置结构，其中所述第二高度大于约50μm。
12.根据权利要求9所述的半导体装置结构，其中所述多个电连接结构包括各自直径介于约5到30μm之间的多个铜柱。
13.根据权利要求9所述的半导体装置结构，其中所述多个接触垫中的每一者的所述区域是直径介于约10到50μm之间的圆圈。
14.根据权利要求9所述的半导体装置结构，其中所述多个熔丝元件包括多个可激光熔断的熔丝。
15.根据权利要求14所述的半导体装置结构，其中每个可激光熔断的熔丝靠近所述多个电连接结构中的所述对应一者。
16.根据权利要求9所述的半导体装置结构，其中所述多个熔丝元件包括多个熔断的熔丝元件。
17.一种测试包含衬底的半导体装置的方法，所述衬底具有从所述衬底的上表面朝上延伸第一高度的多个电连接结构，所述方法包括：
在电耦合到所述多个电连接结构中的对应者并且设置在所述衬底的所述上表面上的多个接触垫上安置相应的多个焊球，所述多个焊球具有至少是所述第一高度的两倍的第二高度；
将测试结构连接到所述多个焊球；以及
通过所述测试结构以电气方式测试所述半导体装置的电路。
18.根据权利要求17所述的方法，其中连接所述测试结构包括回焊所述焊球以在所述多个接触垫与所述测试结构之间形成焊点。
19.根据权利要求17所述的方法，其中所述测试结构由所述焊点支撑在所述多个电连接结构上方的第三高度处。
20.根据权利要求17所述的方法，其进一步包括回焊所述焊点以移除所述测试结构。
21.根据权利要求17所述的方法，其进一步包括从所述多个接触垫移除所述测试结构并移除剩余的焊料。
22.根据权利要求17所述的方法，其进一步包括将所述多个接触垫与所述多个电连接结构电分离。
23.根据权利要求17所述的方法，其中第一高度介于约5到30μm之间。
24.根据权利要求17所述的方法，其中在老化炉中以电气方式测试所述电路。
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US10712382B2 (en) 2020-07-14
US20190064257A1 (en) 2019-02-28

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