CN109423689A

CN109423689A - Heat shield component, single crystal pulling apparatus, single crystal pulling method

Info

Publication number: CN109423689A
Application number: CN201710764993.3A
Authority: CN
Inventors: 仓垣俊二
Original assignee: Sumco Corp
Current assignee: Sumco Corp
Priority date: 2017-08-30
Filing date: 2017-08-30
Publication date: 2019-03-05
Anticipated expiration: 2037-08-30
Also published as: CN109423689B

Abstract

It generates dislocation problem of the invention is that reducing and prevents crackle defect.A kind of heat shield component (20) of single crystal pulling apparatus (1), it passes through CZ method from melt (15) pulling single crystal (16) being stored in crucible (10), it has: cylindrical body portion (21) configure in a manner of around monocrystalline and lower end reach the position far from molten surface；And circular base plate (22), lower end than main part more covers melt to radially extending, wherein, base plate is installed on main part with the state separated more than at one in the circumferential, and it is provided in the segregated portion (L) with base plate main surface parallel and extends in the circumferential and sliding surface (La1, Lb1) that when overlook view overlaps, can absorb the thermal deformation of base plate in the circumferential.

Description

Heat shield component, single crystal pulling apparatus, single crystal pulling method

Technical field

The present invention relates to a kind of heat shield component for based on Czochralski method and utilize the heat shield component The preferred technology of single crystal pulling apparatus, single crystal pulling method.

Background technique

In the past, as the method for making silicon single crystal grow up, it is known to Czochralski method.Czochralski method refers in crucible Crystal seed is immersed in the melt (melt), graduallys while making crystal seed and crucible rotation and lift crystal seed by interior fused raw material, by This method for successively making monocrystalline silicon grow up under it.

The quality of the commonly known monocrystalline grown up by the Czochralski method relies on the temperature in growth.As to crystallization The factor that is affected of temperature, the radiant heat being subject to from the melt in crucible can be enumerated, in order to control the factor, based on cutting gram In the single crystal pulling apparatus of Louth base method, the heat shield component being made of graphite etc. is configured near the crystallization usually in growth (for example, referenced patent document 1 and 2).

Also, in above-mentioned single crystal pulling apparatus, it is provided with the diameter for measuring the crystallization in growth in a non contact fashion (GAP) etc. controls the optical device of pull rate at a distance from liquation face with heat shield component lower end, therefore in order to ensure it Notch section (including slit is arranged in above-mentioned heat shield component mostly in the visual field.).

Moreover, such as patent document 3, it is known to have the pulling apparatus for carrying out cooling mechanism to the monocrystalline lifted.

Patent document 1: Japanese Unexamined Patent Publication 05-294784 bulletin

Patent document 2: Japanese Unexamined Patent Publication 2009-292722 bulletin

Patent document 3: Japanese Unexamined Patent Publication 2009-249243 bulletin.

On the other hand, in above-mentioned single crystal pulling apparatus, during carrying out single crystal pulling, the indoor temperature of chamber is maintained at On the other hand 1000 DEG C or more of high temperature after single crystal pulling, makes the indoor temperature of chamber temporarily be reduced to room temperature, with the shape State supplies the raw material for the monocrystalline for being used to lift next time to crucible.That is, in chamber, when base feed and when pulling single crystal The very big temperature difference is generated, this temperature difference is iteratively produced in monocrystalline manufacturing process.Also, in the lower end of above-mentioned heat shield component Portion is provided with the part opposite with melt, but influence and crucible or heater caused by inert gas of the reason along its surface flow The relationship of configuration etc. generates 100 DEG C~200 DEG C of the temperature difference between the central part and peripheral part of the part.

Also, such as patent document 3, in the pulling apparatus for being provided with cooling body, cooling body is set to as monocrystalline The radially inner side position of side, therefore the temperature difference between the central part and peripheral part radially of the heat shield component further becomes Greatly.

Therefore, sometimes in above-mentioned heat shield component, because of the temperature change sharply that is generated in chamber as described above or The temperature difference sharply and the residual stress in material that are generated in material or the thermal expansion difference etc. with deterioration preventing coating material It influences, generates biggish stress in use.In particular, stress is readily concentrated to be set as near the notch section of optical device, If a possibility that deterioration aggravation of material due to heat shield component Reusability, there are service failures.

Melt/crucible etc. is caused not to be available in this case, the clast etc. of heat shield component is mixed into the melt in crucible, But also become the reason of yield rate reduces.

Alternatively, sometimes because sharply the temperature difference and material in residual stress or deterioration preventing coating material and internal Thermal expansion difference of substance etc. influences, and generates micro mist or small from carbon heating shield member.These micro mists or small are mixed In the case where entering the melt into crucible, it is mixed into monocrystalline there are the micro mist or small from the melt in crucible and generates position Melted in wrong (dislocation), or melt in crucible and the concentration of carbon in monocrystalline increases and becoming causes to deviate the dense of target The problem of the reason of spending numberical range.

In order to avoid these problems, it is also contemplated that replaced heat shield component before Material degradation aggravation, but due to heat shielding Component itself is more expensive, if therefore frequently replace repeatedly, there are problems that cost increase.

Summary of the invention

The present invention has been made in view of the above-described circumstances, and an object thereof is to provide the thermal stress generated in a kind of mitigation material And excellent in te pins of durability, the heat shield component of the separation shielding properties of melt side and monocrystalline side is improved, and provide and utilize the heat Shield member can be improved crystalline quality and can reduce the single crystal pulling apparatus that monocrystalline generates dislocation.

Heat shield component of the invention, based on the Czochralski method from the melt pulling single crystal being stored in crucible Single crystal pulling apparatus in, to carrying out heat shielding around the monocrystalline,

Have: cylindrical body portion configures in a manner of around the monocrystalline and lower end is reached far from the molten surface Position；And circular base plate, than the lower end of the main part more to radially extending and opposed with the molten surface match It sets,

The base plate is installed on the main part with the state separated more than at one in the circumferential,

And it is provided in the segregated portion with the base plate main surface parallel and extends in the circumferential and when overlook view is mutual The sliding surface of coincidence can absorb the thermal deformation of the base plate in the circumferential, thus solves the above problems.

Heat shield component of the invention is provided with notch section in the base plate, the base plate can along pass through the notch The line segment in portion is divided.

In the divided base plate of heat shield component of the invention, radially extend and mutually opposed end face Can by the circumferential direction in the base plate have predetermined distance and it is separated in a manner of configure.

Heat shield component many places of the invention are provided with the notch section, and can be in the inner peripheral portion of the base plate The circumferential position of the notch section do not configured each other in same mode diametrically.

Heat shield component of the invention, can be on the inside of the main part to cover on the inside of these on the upside of the base plate Heat insulating member is arranged in the mode in face.

Heat shield component of the invention can will configure in the heat insulating member and carry out the cold of cooling to the monocrystalline lifted But the recess portion of component is set to inner side.

Single crystal pulling apparatus of the invention, based on cutting krousky from the melt pulling single crystal being stored in crucible Method,

As the heat shield component covered around the monocrystalline, it is able to use above-mentioned described in any item heat shield components.

In single crystal pulling apparatus of the invention, can be provided on the inside of the heat insulating member to the monocrystalline lifted into The cooling cooling component of row.

Single crystal pulling method of the invention can lift monocrystalline using above-mentioned single crystal pulling apparatus.

And it is provided in the segregated portion with the base plate main surface parallel and extends in the circumferential and when overlook view is mutual The sliding surface of coincidence can absorb the thermal deformation of the base plate in the circumferential, the annulus thus configured in a manner of covering melt Shape base plate is installed on main part with the state separated more than at one in the circumferential, therefore can mitigate and generate in base plate Thermal stress, can prevent thermal stress from focusing on the privileged site of heat shield component.

That is, base plate with continuous state in the circumferential setting when, that is, when base plate is without separated place, base plate from It is restricted by thermal expansion, there may be biggish thermal stress in use.In this regard, according to the present invention, by by base plate one Place is above to be separated in the circumferential, and thermal expansion/thermal contraction of base plate is distributed to divided each section, and thus, it is possible to prevent Above-mentioned biggish thermal stress.

As a result, the survivable heat shield component deterioration of material aggravation, can be improved the heat shield component Durability.Also, due to survivable heat shield component, component costs can be reduced.

Moreover, divided each section of base plate is because temperature change causes to expand or shrinks by setting sliding surface When deformation, each section can limit/control the divided each of base plate in the direction along sliding surface along sliding surface expansion Because of thermally-induced shrink/expanded direction in part.Meanwhile divided each section of base plate because temperature change cause expansion or When person shrinks, the state that sliding surface is in contact with each other can be mutually maintained, therefore divided each section of base plate can be prevented It is separated from each other due to expansion/contraction caused by temperature change.The case where base plate leads to expansion/contraction because of temperature change as a result, Under, it is separated between divided each section of base plate, the connection up and down of base plate can be prevented.Therefore, in base plate Rubbish/particle etc. that upside generates falls to the melt (dissolving raw material) positioned at the downside of base plate, can prevent from becoming monocrystalline The reason of generating dislocation and crystalline quality reduction.

Here, become cylindrical body portion in approximate same size in the diameter that cylindrical body portion includes upper and lower ends, It in addition to this further include the main part for becoming the inverted cone mesa-shaped of path gradually from the upper end toward the lower end.In circular base plate packet The horizontal base plate that inner circumferential side and the height of peripheral side become roughly the same is included, further includes that inner circumferential side than peripheral side is located at upside Or the base plate of the inclined state of downside.

Also, can also circular base plate have be not dependent on angle as the height of inner circumferential side and peripheral side and Be from inner circumferential side to peripheral side until become plate shape or curved that is downwardly convex or raising upward.

Moreover, the base plate when single crystal pulling can be set as fixed relative to the angle of the main part.

Also, as the method that base plate is installed on main part, such as can enumerate inside in the setting of the lower end of main part The support portion that side extends, in the method etc. of the state installation of the periphery of the upper surface of support portion mounting base plate.

For heat shield component of the invention by the way that notch section is arranged in the base plate, base plate edge passes through the notch section Line segment separated, can prevent thermal stress from focusing on around notch section from there through the line segment, heat can be further increased The durability of shield member.

Here, including lacking of being formed in a manner of cutting the inner circumferential of base plate or a part of periphery in the notch section Oral area further includes the opening portion being formed between inner circumferential and periphery in addition to this.Also, the notch section, which is not limited to use in, to be ensured The visual field of optical device and the notch section formed, or the notch section formed for other purposes.

Heat shield component of the invention has the divided base plate.In the divided base plate, Radially extending and mutually opposed end face by the circumferential direction in the base plate have predetermined distance and it is separated in a manner of Configuration is absorbed when thus divided each section of base plate leads to expansion because of temperature change by the mutual gap in end face Deformation in the circumferential direction can prevent divided each section of base plate from mutually abutting and damaged, and be able to maintain that sliding The state that face contacts each other.In the case that base plate leads to expansion/contraction because of temperature change as a result, bottom plate can be prevented Divided each section breakage in portion or divided each section of base plate separate, in the connection up and down of base plate.Cause This, can prevent the rubbish/particle etc. generated in the upside of base plate from falling to and (dissolve original positioned at the melt of the downside of base plate Material), and become the reason of generating dislocation and crystalline quality reduction.

Heat shield component of the invention can many places the notch section is set, furthermore, it is also possible to in the base plate The circumferential position of the notch section in circumference does not configure each other in same mode diametrically.

Heat shield component of the invention can on the upside of the base plate on the inside of the main part to cover on the inside of these Heat insulating member is arranged in the mode in face.It further decreases accordingly, for the monocrystalline being located on the inside of heat shield component from melt and heating The heat of device transmitting, can be improved the controlling in the control to the hot resume of the monocrystalline lifted.And by preventing the bottom of at The connection up and down in plate portion, though in the case where generating dust etc. from the heat insulating member that is made of carbon etc., can also prevent the rubbish/ Particle etc. falls to the melt (dissolving raw material) positioned at the downside of base plate, and becomes and generate dislocation and crystalline quality reduction The reason of.

It can be configured in the inner side of heat shield component of the invention and carry out cooling cooling structure to the monocrystalline lifted Part.By configuring the cooling component, even if inside and outside and base plate the upper and lower temperature difference (temperature gradient) of main part is into one In the case that step increases, it is also prevented from the breakage of heat shield component, and the cutting part of the base plate of heat shield component will not be upper and lower Connection, therefore reduce and generate monocrystalline dislocation, it may be implemented to improve yield rate.In addition it is possible in the inside of heat shield component The recess portion for configuring cooling component is arranged in position.

Single crystal pulling apparatus of the invention based on the Czochralski method from the melt pulling single crystal being stored in crucible,

By the way that heat shielding portion described in any of the above embodiments can be utilized as the heat shield component covered around the monocrystalline Part compared to the durability that can be improved heat shield component in the past, and realizes the cost reduced needed for monocrystalline manufactures, and can subtract The generation for the unfavorable condition that heat shield component destroys in few use, thereby, it is possible to realize to improve crystalline quality and improvement yield rate.

In single crystal pulling apparatus of the invention, by be provided on the inside of the heat insulating member to the monocrystalline lifted into The cooling cooling component of row, can be improved the temperature control in lifted monocrystalline.

Invention effect

According to the present invention, it can be achieved that following effect: it is capable of providing the thermal stress that generates and excellent in te pins of durability in a kind of mitigation material, And the heat shield component of the separation isolation performance of raw material melt (melt) side and monocrystalline side is improved, and can be improved to utilize and be somebody's turn to do Heat shield component can be improved crystalline quality and can reduce the single crystal pulling apparatus for generating dislocation.

Detailed description of the invention

Fig. 1 is the positive view for indicating the 1st embodiment of single crystal pulling apparatus according to the present invention.

Fig. 2 is the exploded perspective view of the base plate in the 1st embodiment for indicate heat shield component according to the present invention.

Fig. 3 is the top view of the base plate in the 1st embodiment for indicate heat shield component according to the present invention.

Fig. 4 is that the partitioning portion of the base plate in the 1st embodiment for indicate heat shield component according to the present invention is attached The circumferential cross-sectional view of deformation state caused by close temperature change.

Fig. 5 is the top view of the base plate in the 2nd embodiment for indicate heat shield component according to the present invention.

Fig. 6 is the positive view for indicating the 3rd embodiment of heat shield component according to the present invention.

Fig. 7 is the positive view for indicating the 4th embodiment of heat shield component according to the present invention.

Fig. 8 is the positive view for indicating the 5th embodiment of heat shield component according to the present invention.

Fig. 9 is that the partitioning portion of the base plate in the 5th embodiment for indicate heat shield component according to the present invention is attached Close exploded perspective view.

Figure 10 is the top view of the base plate in the 6th embodiment for indicate heat shield component according to the present invention.

Figure 11 is the top view of the base plate in the 7th embodiment for indicate heat shield component according to the present invention.

Figure 12 is the positive view for indicating the 8th embodiment of heat shield component according to the present invention.

Figure 13 is the positive view for indicating the 9th embodiment of heat shield component according to the present invention.

Figure 14 is near the partitioning portion of the base plate in the embodiment for indicate heat shield component according to the present invention Other examples circumferential cross-sectional view.

Figure 15 is near the partitioning portion of the base plate in the embodiment for indicate heat shield component according to the present invention Other examples circumferential cross-sectional view.

Specific embodiment

Hereinafter, with reference to the accompanying drawings, being mentioned to heat shield component according to the present invention and using the monocrystalline of the heat shield component 1st embodiment of drawing device is illustrated.

Fig. 1 is the positive view for indicating the single crystal pulling apparatus in present embodiment, and Fig. 2 is indicated in present embodiment The exploded perspective view of base plate in heat shield component, Fig. 3 are the top view for indicating the base plate in present embodiment, attached drawing In, appended drawing reference 1 is single crystal pulling apparatus.

It is partly led as shown in Figure 1, single crystal pulling apparatus 1 involved in present embodiment has to be set in chamber 11 and store Body melt (melted silicon) 15 and the crucible (silica crucible) 10 that the semiconductor monocrystals such as silicon (monocrystalline) 16 are lifted.

As shown in Figure 1, silica crucible 10, which becomes, accommodates the quartz internal layer container of melted silicon 15 in inside, and being will be quartzy Crucible 10 by outside graphite crucible 10a keep dual structure, with by the support shaft 12 for being referred to as bracket carry out rotation and The state of lifting driving is contained in chamber 11.Having heaters 13 is configured along its periphery around the crucible 10, on the other hand, The oriented direction opposite with support shaft 12 is arranged in the top of crucible 10 to rotate freely and go up and down lifting steel wire 14 freely.

In the lower end of the lifting steel wire 14, crystal seed T is installed to crystal seed chuck 14a, will be installed to the crystalline substance of crystal seed chuck 14a Kind T is impregnated into the melted silicon 15 in crucible 10, lifting steel wire 14 and support shaft 12 is rotated in the opposite direction on one side, on one side from melted silicon 15 gradually lift crystal seed T, and thus silicon single crystal 16 is in its lower growth.

Also, positioning in chamber 11 installs the optics of diameter being equipped with for measuring the silicon single crystal 16 in growth and sets Standby (illustration omitted), the lifting speed according to the control of the variable of the optical device relative to the silicon single crystal 16 of 15 liquid level of melted silicon Degree etc..

Moreover, as shown in Figure 1, being configured in the top of crucible 10 to carrying out heat shielding around the silicon single crystal 16 in growth Heat shield component 20.

Heat shield component 20 is isolated to the radiant heat of the side surface part of silicon single crystal 16, such as from heater 13 and 15 face of melted silicon Shown in Fig. 1, the side of the silicon single crystal 16 in cultivating, and encirclement opposed with 15 face of melted silicon are surrounded.

Specifically, heat shield component 20 has: cylindrical body portion 21, by configure in a manner of the silicon single crystal 16 and under End reaches near the melted silicon 15 in crucible 10；And circular base plate 22, matched with the state opposed with melted silicon 15 It is placed in the lower end of main part 21.

These main parts 21 and base plate 22 are formed by graphite or CC composite wood (carbon fiber-reinforced carbon composite material) etc., As the shell for implementing the coating based on SiC on its surface.

As shown in Figure 1, circumferentially face is provided with for fixing heat shield component 20 to chamber in the upper end of main part 21 The flange part 23 of frame 17 in room 11.Also, in the lower end of main part 21, the support portion of the peripheral part in support baseboard portion 22 The 24 state circumferentially face setting to extend to the inner circumferential side of main part 21.

In addition, the lower end of support portion 24 is formed as reducing in same level in silicon with the lower surface of base plate 22 The influence for the air-flow crossed on 15 liquid level of melt towards radial center effluent.

In the inside of main part 21, in the upside of base plate 22 and 16 side of silicon single crystal (inside) of these shells, such as Fig. 1 It is shown, it is provided with and is made of carbon fiber, hair board-type insulant (thick cloth-like thing) or formed heat-insulating material (shape is solid state, Stable shape) heat insulating member 28.

Main part 21 and heat insulating member 28 are arranged with same heart shaped, the inner side surface of main part 21 and the outside of heat insulating member 28 Side contacts with each other, or with the degree separate configuration with slight distance.Also, heat insulating member 28 is placed in base plate 22, Phase is shaped generally as in a manner of the state that next week end face to become heat insulating member 28 contacts with each other with the upper surface of base plate 22 Same shape.

As shown in Figure 1, the recess portion 28a being recessed to radial outside is provided in the inside of heat insulating member 28, in recess portion 28a Inside can circumferentially arranged inside have as cooling component water cooled pipeline water cold sleeve 29, can further active Ground carries out cooling when single crystal pulling.

As shown in FIG. 1 to 3, the roughly circular profile become through silicon single crystal 16 is provided in the central portion of base plate 22 Opening portion 26.

In the periphery of base plate 22 27, there is support slot 27a and by embedding with support portion 24 its lower end side is circumferentially arranged It closes and is supported.

Base plate 22 becomes the part support slot 27a of removal periphery 27 and the plate with substantially uniform thickness, And the inner circumferential side for becoming opening portion 26 is different from the height of 27 side of periphery of support portion 24 is supported in, and becomes 26 side of inner circumferential and is located at The heeling condition of the lower section of 27 side of periphery.Also, base plate 22 be formed as its lower surface it is smooth under convex spherical shape.In addition, Base plate 22 is not limited to spherical shape, as long as the inner circumferential side for becoming opening portion 26 is convex under becoming in a manner of the lowermost, bending is It can.

As shown in Figures 2 and 3,26 part of inner circumferential of base plate 22 is provided with lacking for the visual field for ensuring optical device Oral area 25.Base plate 22 by separating in the circumferential along the cutting part L of the line segment setting radially extended by the notch section 25 And the state for being divided into multiple cutting plate 22a, 22b is installed on main part 21.

In the base plate 22 of present embodiment, cutting part L is set to along the two of the diameter for being mutually in 120 ° or so, by phase Big cutting plate 22a and relatively small cutting plate 22b are constituted.

Sliding surface La1, the Lb1 substantially parallel with the upper surface of base plate 22 or lower surface are provided in cutting part L, The sliding surface Lb1 of assembled base plate 22, the sliding surface La1 and cutting plate 22b of cutting plate 22a contacts with each other.

Fig. 4 is the cross-sectional view indicated near the cutting part of the base plate in present embodiment, indicates contraction-like under low temperature Swelling state (b) under state (a), high temperature.

As shown in Figure 2 to 4, in the cutting part L of cutting plate 22a, circumferential end faces are divided up and down, are respectively formed circumferential direction Position different last week end face La3 and next week end face La4.

In cutting plate 22a, become in the cutting part L at circumferential both ends, in circumferential end faces opposed with cutting plate 22b, End face La3 last week is located remotely from the position of cutting plate 22b compared to next week end face La4.

Last week, the upper end of end face La3 became upper end La2, and the lower end of next week end face La4 becomes lower end La5.On also, The lower end of all end face La3 is connect with the upper end of next week end face La4 with the face that identical height and position extends in the circumferential, the face As sliding surface La1.

Last week, end face La3 and next week end face La4 was arranged in a manner of extending to substantially vertical direction, therefore overlook view When upper end La2 and lower end La5 it is consistent with the circumferential end boundary position of sliding surface La1 when overlook view.

In cutting plate 22a, as shown in Figure 2 to 4, upper end La2 and lower end La5 with when overlook view relative to shape It is located at circumferential two sides at the line segment for having cutting part L, and the mode for becoming separated position is formed.Therefore, sliding surface La1 It is configured in a manner of being extended relative to the line segment for being formed with cutting part L to circumferential two sides when overlook view.

That is, as shown in Figure 2 to 4, the sliding surface La1 of cutting plate 22a is formed in from the cutting part L of cutting plate 22a Radial upper end La2 towards extend below vertical direction last week end face La3 short transverse in the middle part of circumferentially dash forward to having The upper surface location of all convex portions of next week end face La4 out.The lower end of next week end face La4 becomes the cutting part L of cutting plate 22a In radial lower end La5.

Last week, end face La3 and next week end face La4 was slided with having with as defined at a distance from upper end La2 and lower end La5 The mode of the corresponding circumferential distance of circumferential lengths of dynamic face La1 is with mutually separated substantially parallel state is formed in the circumferential.

The circumferential distance of upper end La2 and lower end La5 in present embodiment are set as in overlook view base plate 22 Constant on Shi Qi diametrical direction position.The circumferential lengths of the sliding surface La1 of cutting plate 22a are set as overlooking and see as a result, Examine constant on 22 Shi Qi diametrical direction position of base plate.

In cutting plate 22a, the circumferential end faces opposed with cutting plate 22b are present in its both ends, but as shown in Fig. 2, any End face, end face La3 last week are arranged compared to next week end face La4 far from cutting plate 22b.

That is, as shown in Fig. 2, cutting plate 22a is configured to the cutting part L in both sides, compared with the side La2 of upper end, lower end The side La5 is prominent towards cutting plate 22b in the circumferential.Circumferential lengths about cutting plate 22a as a result, are set as and upper end La2 Compared with the distance between upper end La2 is upside circumferential lengths, the distance between lower end La5 and lower end La5 are downside Circumferential lengths become larger.

Similarly, as shown in Figure 2 to 4, in the cutting part L of cutting plate 22b, circumferential end faces are divided up and down, respectively It is formed with circumferential position different last week end face Lb3 and next week end face Lb4.

In cutting plate 22b, by circumferential end faces respective cutting part L opposed with cutting plate 22a, last week end face Lb3 It is located at compared with next week end face Lb4 close to the position of cutting plate 22a.

Last week, the upper end of end face Lb3 became upper end Lb2, and the lower end of next week end face Lb4 becomes lower end Lb5.On also, The lower end of all end face Lb3 is connect with the upper end of next week end face Lb4 with the face that identical height and position extends in the circumferential, the face As sliding surface Lb1.

Last week, end face Lb3 and next week end face Lb4 was arranged in a manner of extending to substantially vertical direction, therefore overlook view When upper end Lb2 it is consistent with the circumferential end boundary position of sliding surface Lb1 when lower end Lb5 and overlook view.

In cutting plate 22b, as shown in Figure 2 to 4, upper end Lb2 and lower end Lb5 with when overlook view relative to shape It is located at circumferential two sides at the line segment for having cutting part L, and the mode for becoming separated position is formed.Therefore sliding surface Lb1 It is configured in a manner of being extended relative to the line segment for being formed with cutting part L to circumferential two sides when overlook view.

That is, as shown in Figure 2 to 4, the sliding surface Lb1 of cutting plate 22b is formed in from the cutting part L of cutting plate 22b Radial upper end Lb2 towards extend below vertical direction last week end face Lb3 short transverse in the middle part of to after having circumferentially The upper surface location of all convex portions of the next week end face Lb4 moved back.The lower end of next week end face Lb4 becomes the cutting part L of cutting plate 22b In radial lower end Lb5.

Last week, end face Lb3 and next week end face Lb4 was slided with having with as defined at a distance from upper end Lb2 and lower end Lb5 The mode of the corresponding circumferential distance of circumferential lengths of dynamic face Lb1 is with mutually separated substantially parallel state is formed in the circumferential.

The circumferential distance of upper end Lb2 and lower end Lb5 in present embodiment are set as in overlook view base plate 22 Constant on Shi Qi diametrical direction position.The circumferential lengths of the sliding surface Lb1 of cutting plate 22b are set as overlooking and see as a result, Examine constant on 22 Shi Qi diametrical direction position of base plate.

In cutting plate 22b, the circumferential end faces opposed with cutting plate 22a are present in its both ends, but as shown in Fig. 2, any End face, last week, end face Lb3 was located adjacent to the position of cutting plate 22a, next week end face Lb4 and end last week compared with next week end face Lb4 Face Lb3 compares the position for being located remotely from cutting plate 22a.

That is, as shown in Fig. 2, cutting plate 22b is configured to the cutting part L in both sides, compared with the side Lb2 of upper end, lower end The side Lb5 is prominent towards cutting plate 22a in the circumferential.Circumferential lengths about cutting plate 22b as a result, are set as and upper end Lb2 Compared with the distance between upper end Lb2 is upside circumferential lengths, the distance between lower end Lb5 and lower end Lb5 are downside Circumferential lengths become smaller.

As shown in Fig. 2, base plate 22 is made of cutting plate 22a and cutting plate 22b, in the use state, such as Fig. 3 and figure Shown in 4, assembling cutting plate 22a and cutting plate 22b, and becoming overall profile is circular state.

At this point, the cutting part L of base plate 22 is assembling cutting plate 22a and in the state of cutting plate 22b, such as Fig. 2~Fig. 4 institute Show, is constituted in the mode for being placed in upside relative to cutting plate 22a, cutting plate 22b.

That is, in the cutting plate 22a and cutting plate 22b of assembling, as shown in figure 4, the sliding surface relative to cutting plate 22a The sliding surface Lb1 of La1, cutting plate 22b are located at upside, can mutually slide.

In this way, the cutting part L at two, prominent to cutting plate 22a in the circumferential end faces for the cutting plate 22b for becoming upside The side end face Lb2 last week all convex portions be placed in become downside pitch cutting 22a circumferential end faces it is outstanding to cutting plate 22b All convex portions of next week end face Lb4 side are supported on main part 21 as cutting plate 22a, 22b of assembled state as a result,.

Therefore, the cutting part L at two, being placed in the cutting plate 22a for all having larger circumferential size has compared with Xiao Zhou To the cutting plate 22b of size, so that base plate 22 is steadily supported.

In the base plate 22 of assembling, as shown in Fig. 3~Fig. 4, the upper end La2's and cutting plate 22b of cutting plate 22a is upper End Lb2 is located at position parallel with the line segment for being formed with cutting part L when overlook view, and is mutually divided in the circumferential with becoming The mode for the position opened is formed.

Meanwhile mutually opposed end face La3 last week and end face last week Lb3 in a manner of there is predetermined distance in the circumferential at For separated state.

The base plate 22 of assembling in present embodiment, as shown in Fig. 3~Fig. 4, the week of upper end La2 and upper end Lb2 It is set as constant in the 22 Shi Qi radial position of overlook view base plate to distance.Mutually opposed end face last week as a result, Separation distance between La3 and last week end face Lb3 is set as on 22 Shi Qi diametrical direction position of overlook view base plate substantially It is constant.

Similarly, in the base plate of assembling 22, as shown in figure 4, the lower end La5 and cutting plate 22b of cutting plate 22a Lower end Lb5 is located at position parallel with the line segment for being formed with cutting part L when overlook view, and to become in the circumferential mutually The mode of separated position is formed.

Meanwhile mutually opposed next week end face La4 and next week end face Lb4 in a manner of there is predetermined distance in the circumferential at For separated state.

Similarly, in the base plate 22 of the assembling in present embodiment, as shown in figure 4, lower end La5 and lower end Lb5 Circumferential distance be set as constant on 22 Shi Qi diametrical direction position of overlook view base plate.It is mutually opposed as a result, Separation distance between next week end face La4 and next week end face Lb4 is set as 22 Shi Qi diametrical direction position of overlook view base plate Set constant.

In addition, as shown in Fig. 2, notch section 25 can be to have same level throughout the thickness direction overall length of cutting part L The mode in section is formed, but can also suitably be deformed according to reasons such as the visuals field for ensuring optical device.

When carrying out monocrystalline growth in the single crystal pulling apparatus 1 in present embodiment, it is used as preparatory process first, such as Fig. 2 institute Show, main part 21 is fixed by flange part 23 and arrives frame 17.Moreover, with relative to the chimeric branch of the support portion 24 of the main part 21 The mode for supportting slot 27a supports the biggish cutting plate 22a of circumferential size of downside in divided cutting plate 22a, 22b, later, Assemble the setting that cutting plate 22b carries out heat shield component 20 as base plate 22.

When the assembling, as shown in Fig. 3, Fig. 4 (a), mutually opposed last week end face La3 and end face last week Lb3 in cutting part L Between separation distance be set as the radially constant in base plate 22.

Then, heat insulating member 28 is placed in these main parts 21 and base plate 22, moreover, to be located at heat insulating member 28 Water cold sleeve 29 is arranged in mode in recess portion 28a.

Moreover, crystal seed T to be installed on to the crystal seed chuck 14a of lifting 14 lower end of steel wire, and supplied into silica crucible 10 After the polycrystal silicon as raw material, after sealed chamber 11 is vacuum-evacuated, supplied from gas introduction port (not shown) The inert gases such as argon gas, by between 15 surface of heat shield component 20 and melted silicon become defined flow/velocity in a manner of into Row control.(vacuum drawn process)

In this state, it dissolves the silicon raw material in silica crucible 10 to be set as melted silicon 15 to the energization of heater 13, and adjusts The central liquid level of melted silicon 15 is nearby kept monocrystalline growth temperature by the electric power of whole heater 13.(dissolution of raw material process)

Then, decline the crystal seed T hung by lifting steel wire 14 and be impregnated into melted silicon L after reconciliation, rotation crystal seed T's It is lifted simultaneously, dislocation-free is carried out by so-called necking down, make silica crucible 10 and lifting steel wire 14 mutually opposite later Silicon single crystal 16 is lifted while ground rotates and makes its growth.(single crystal pulling process: dipping process, neck process, shoulder process, Main body process, tail portion process)

At this point, according to lifting condition, additionally it is possible to carry out applying component by magnetic field (not shown) and apply magnetic field and based on making to freeze The active cooling of water cooled pipeline circulation of the agent (cooling water) into water cold sleeve 29.

In the process, the monocrystalline 16 of silicon becomes the state that surrounding is covered by heat shield component 20, thus by heater 13 with And the radiant heat etc. that the melted silicon 15 in silica crucible 10 generates is blocked by heat shield component 20.Therefore, it is able to suppress silicon The temperature of monocrystalline 16 rises and is easy to predetermined temperature to set the cooling control of silicon single crystal 16 by silicon single crystal 16 Crystallization property caused by temperature controls simultaneously lifts the silicon single crystal 16 with desired crystallization property.

In the heat shield component 20 of present embodiment, mutually opposed end face La3 last week of cutting part L and end face last week Circumferentially spaced distance between Lb3, as shown in Figure 4 (a), relative to become room temperature preparatory process, as shown in Figure 4 (b), at To become the state reduced by the thermal expansion of cutting plate 22a, 22b in 1000 DEG C or more lifting processes etc..Similarly, divide The circumferentially spaced distance between the mutually opposed next week end face La4 and next week end face Lb4 of portion L is cut, as shown in Figure 4 (a), relatively In the preparatory process for becoming room temperature, as shown in Figure 4 (b), in becoming 1000 DEG C or more lifting process etc., become because of cutting plate The thermal expansion of 22a, 22b and the state reduced.

But in the heat shield component 20 of present embodiment, last week end face La3 and end face last week Lb3 and next week end face Although La4 is close to each other because of the thermal expansion with next week end face Lb4, abutting can be avoided.

Meanwhile in the heat shield component 20 of present embodiment, sliding surface La1 and sliding surface Lb1, shown in Fig. 4 (a) at Become in 1000 DEG C or more lifting process etc. shown in preparatory process and Fig. 4 (b) for room temperature, maintenance contacts with each other State.Therefore, even if temperature declines and cutting plate 22a, 22b are received in the case where temperature rises and cutting plate 22a, 22b expand In the case where contracting, the sealing state for base plate 22 in upper and lower position can be independently maintained with its temperature change.

Therefore, in all process steps that there are a possibility that falling micro mist etc. from heat insulating member 28 etc., for example, vacuum drawn work Sequence, dissolution of raw material process, in single crystal pulling process (dipping process, neck process, shoulder process, main body process, tail portion process), It is able to maintain that the state that sliding surface La1 is contacted with sliding surface Lb1.

As a result, in the heat shield component 20 of present embodiment, the insulation of the heat shield component 20 of heat insulating member 28 etc. is constituted Material is made of carbon fiber, though be hair board-type insulant (thick cloth-like material) or formed heat-insulating material (shape is solid state, Stable shape), it can also prevent from falling to the carbon dissolution of the carbon fiber of melted silicon 15 and concentration of carbon value increases in silicon single crystal 16 Height prevents monocrystalline from generating the influence crystallization property of dislocation.

Heat shield component 20 according to the present embodiment, the circular base plate 22 opposed with melted silicon 15 is in many places in week Separate upwards, and respective cutting plate 22a, 22b are with opposed last week end face La3 and end face Lb3 last week and next week end Face La4 and next week end face Lb4 is installed to main part 21 in the circumferentially apart state of base plate 22, therefore can mitigate bottom plate The thermal stress generated in portion 22.

It especially in this embodiment, will by the cutting part L along 2 line segments mutually intersected by notch section 25 with 120 ° Base plate 22 is divided into two, and these cutting plates 22a, 22b can contact cunning with sliding surface Lb1 by respective sliding surface La1 It is dynamic, therefore absorbed by the gap between end face last week La3 and end face Lb3 last week and next week end face La4 and next week end face Lb4 Thermal deformation in the circumferential direction of cutting plate 22a, 22b can be avoided and mutually abut in the circumferential.

Especially cooled by cooling component 29 in 16 side of silicon single crystal, the diametric temperature gradient of base plate 22 becomes larger In the case where, also it can prevent thermal stress from focusing near cutting part L, and can prevent thermal stress from focusing on notch section 25 Around.

Therefore, it can be improved the durability of heat shield component 20, even if the deterioration of material aggravates, heat shield component 20 is not yet Destructible.As a result, the generation for a problem that heat shield component 20 destroys can be reduced in use.

Also, cutting plate 22a, 22b can be contacted and slid by respective sliding surface La1 and sliding surface Lb1, thus, it is possible to It is reliably separated the upside of base plate 22 with downside, in case gas circulates.Even if as a result, from constitute heat insulating member 28 it is exhausted In the case that hot material etc. generates dust/rubbish etc., it can also prevent these particles generated in the upside of base plate 22 from reaching The melted silicon 15 of the downside of base plate 22.

Therefore, the silicon single crystal for inhibiting the particle for the reason of becoming these dislocations to fall in melted silicon 15, therefore lifting In 16, dislocation is prevented, improvement yield rate is easily implemented.

Moreover, dividing bottom for cutting part L is formed as cut-off rule by the diameter of notch section 25 in the embodiment Plate portion 22, as shown in Figure 2 to 4, in the cutting part L at 2, relative to biggish cutting plate 22a, lesser cutting plate The mode that 22b is placed in upside is set as the structure of assembling cutting plate 22a and cutting plate 22b, and thus, it is possible to stable state guarantor Each cutting plate is held, in case these cutting plates 22a, 22b falls off from main part 21.

In present embodiment, the lifting of silicon single crystal 16 is carried out using the heat shield component 20 for becoming above structure, is calculated The crackle generated in heat shield component 20.It is cracked when as a result, using undivided base plate, but the heat shielding of present embodiment It covers and is not cracked in component 20.

Also, in present embodiment, the lifting of silicon single crystal 16 is carried out using the heat shield component 20 for becoming above structure, In silicon single crystal 16, the axial length ratio for generating the region of dislocation is calculated, that is, in the silicon single crystal lifted, calculate these The axis direction length in region accounts for the ratio of monocrystalline overall length.Divided by the diameter mutually intersected with 120 ° as a result, to form 2 Cutting plate 22a, 22b, but with not set sliding surface and the circumferential end faces of the cutting plate only mutually opposed state phase not being overlapped Than that the ratio for generating dislocation can be reduced to 1/10 relative to the axial length of the silicon single crystal lifted.

Hereinafter, with reference to the accompanying drawings, to the 2nd embodiment of single crystal pulling apparatus according to the present invention, heat shield component into Row explanation.

Fig. 5 is the top view for indicating the base plate in present embodiment.

Difference in present embodiment from the 1st above-mentioned embodiment is the separation distance in cutting part L, about removing Corresponding constitutive requirements other than this, simultaneously the description thereof will be omitted for mark same reference numerals.

In present embodiment, with the mode different in the diametrical direction of base plate 22 of the separation distance in cutting part L into Row setting.

Specifically, the circumferentially spaced distance of cutting plate 22a in cutting part L and cutting plate 22b, as shown in figure 5, with from It is set on the inside of the diametrical direction of base plate 22 towards the widened mode in outside.That is, the week of upper end La2 and upper end Lb2 To separation distance, compared with 26 side of opening portion, become larger in 27 side of periphery.For example, can be equal with upper end La2 and upper end Lb2 It is set in such a way that the line segment at the center of base plate 22 is diametrically.

Similarly, with the circumferentially spaced distance of lower end La5 and lower end Lb5 from court on the inside of the diametrical direction of base plate 22 Widened mode is set outward.That is, the circumferentially spaced distance of lower end La5 and lower end Lb5, with 26 side phase of opening portion Than becoming larger in 27 side of periphery.For example, can be with lower end La5 and lower end Lb5 in the line segment at the center by base plate 22 Mode i.e. diametrically is set.

In present embodiment, even if in the case where similarly generating temperature change as a result, it is wider as described above by setting The separation distance of setting can further absorb and be drawn by temperature change compared to 26 side of inner circumferential of base plate 22 more outward all 27 sides The deformation risen.

Moreover, being set as close to the position of heater 13, also, it is isolated by heat insulating member 28 from water cold sleeve 29, thus Even if comparing 26 side of opening portion in 29 side of periphery for becoming base plate 22 at higher temperature, the thermal expansion of cutting plate 22a, 22b become larger In the case where, by upper end La2 with the circumferentially spaced distance of upper end Lb2 compared with 26 side of opening portion, 27 side of periphery compared with Big setting, can easily absorb and have discrepant thermal expansion in radial position.

Therefore, it is reliably prevented from cutting plate 22a mutually to abut with cutting plate 22b, and is not in cutting plate 22a It is separated with cutting plate 22b and generates gap to destroy the sealing of base plate 22.

Hereinafter, with reference to the accompanying drawings, to the 3rd embodiment of single crystal pulling apparatus according to the present invention, heat shield component into Row explanation.

Fig. 6 is the positive view for indicating the heat shield component in present embodiment.

Difference in present embodiment from the 1st and the 2nd above-mentioned embodiment is the angle of base plate, about removing Corresponding constitutive requirements other than this, simultaneously the description thereof will be omitted for mark same reference numerals.

In present embodiment, as shown in fig. 6, base plate 22 becomes substantially plate, with the height of 26 side of inner circumferential and 27 side of periphery The roughly the same mode in degree position is set.

Even if in the present embodiment, can also play effect identical with above-mentioned embodiment, and can will be hot The base plate 22 of shield member 20 is set as substantially parallel with 15 liquid level of melted silicon and carries out the lifting of silicon single crystal 16, therefore can incite somebody to action The state of air-flow on 15 liquid level of melted silicon is set as specified states, thus, it is possible to lift the silicon list with defined crystallization property Crystalline substance 16.

Hereinafter, with reference to the accompanying drawings, to the 4th embodiment of single crystal pulling apparatus according to the present invention, heat shield component into Row explanation.

Fig. 7 is the positive view for indicating the heat shield component in present embodiment.

Difference in present embodiment from the 3rd above-mentioned embodiment is the angle of base plate, about in addition to this Corresponding constitutive requirements, mark same reference numerals and the description thereof will be omitted.

In present embodiment, as shown in fig. 7, base plate 22 becomes substantially plate, with peripheral side 27 relative to inner circumferential side 26 The mode being lower sets its height and position.

Even if in the present embodiment, can also play effect identical with above-mentioned embodiment, and in heat shielding In the base plate 22 of component 20, compared with 26 side of inner circumferential, 27 side of periphery can be set as carrying out silicon close to 15 liquid level of melted silicon The lifting of monocrystalline 16, therefore the state of the air-flow on 15 liquid level of melted silicon can be set as defined state, thus, it is possible to lift Silicon single crystal 16 with desired crystallization property.

Hereinafter, with reference to the accompanying drawings, to the 5th embodiment of single crystal pulling apparatus according to the present invention, heat shield component into Row explanation.

Fig. 8 is the positive view for indicating the heat shield component in present embodiment, and Fig. 9 is the bottom indicated in present embodiment The exploded perspective view of the inner circumferential side of the cutting part in plate portion.In addition, not all structure is shown as perspective view in Fig. 9 Out, hiding and invisible structure also marks appended drawing reference and carries out its explanation to it.

Difference in present embodiment from the 3rd above-mentioned embodiment is the inner circumferential side shape of base plate, about removing Corresponding constitutive requirements other than this, simultaneously the description thereof will be omitted for addition same reference numerals.

In present embodiment, as shown in Figure 8, Figure 9, internal perisporium 26c is vertically equipped in the inner circumferential 26 of base plate 22.

As shown in Figure 8, Figure 9, internal perisporium 26c is in the opening portion 26 for the inner circumferential side for becoming base plate 22, along its overlook view Profile it is circumferentially arranged, and the profile by notch section 25 along overlook view erects, along the base plate 22 of overlook view All profiles are continuously arranged.To spread its overall length, the mode with identical height dimension carries out internal perisporium 26c in present embodiment Setting.

Inner wall part 26c is arranged in such a way that sliding surface La1, Lb1 in cutting part L are continuous.Specifically, in sliding surface The inner peripheral side end portion of La1, Lb1 are set as parallel with the inner peripheral surface of inner wall part 26c or outer peripheral surface in a manner of being contiguous therewith State or as substantially concentric vertical guide, the thickness direction central location of inner wall part 26c be provided with sliding surface La1, Lb1。

Similarly, the upper end Lb2 of the upper end La2 and cutting plate 22b of cutting plate 22a are in inner peripheral side end portion and inner wall The mode that the periphery side surface of portion 26c becomes vertical direction is continuously arranged.

Similarly, cutting plate 22a last week end face La3 and next week end face La4 and cutting plate 22b end face last week Lb3 and next week end face Lb4, in a manner of being contiguous therewith, and using the cutting plate 22a in inner peripheral side end portion as inner wall part 26c All end faces are continuously arranged to the mode that the diametrical direction of vertical direction and base plate 22 extends.

Even if, relative to the sliding surface La1 of cutting plate 22a, the sliding surface Lb1 of cutting plate 22b is located at outer in inner wall part 26c Side can mutually be slided.

In the base plate 22 of the assembling of present embodiment, even if in the inside extended part of wall portion 26c outer peripheral surface, cutting plate The upper end Lb2 of the upper end La2 and cutting plate 22b of 22a is also arranged with becoming parastate with vertical direction, and at Mode for position separated in the circumferential direction of base plate 22 is formed.

Meanwhile mutually opposed end face La3 last week and end face last week Lb3 and next week end face La4 and next week end face Lb4 with The separated state of mode with defined distance assembles in the circumferential.

In the base plate 22 of the assembling of present embodiment, even if in the inside extended part of wall portion 26c inner peripheral surface, cutting plate The lower end Lb5 of the lower end La5 and cutting plate 22b of 22a is also arranged with becoming parastate with vertical direction, and at Mode for position separated in the circumferential direction of base plate 22 is formed.

Even if, relative to the preparatory process for becoming room temperature, becoming 1000 DEG C or more in the inner wall part 26c of present embodiment It lifts in process etc., due to the thermal expansion because of cutting plate 22a, 22b caused by the temperature difference, even if any cutting part at circumferential two L also becomes the state that the circumferentially spaced distance between mutually opposed end face La3 last week and last week end face Lb3 reduces.

Similarly, relative to the preparatory process for becoming room temperature, become in 1000 DEG C or more lifting process etc., due to because of temperature The thermal expansion of cutting plate 22a, 22b caused by difference become the mutually opposed next week end face La4 of the cutting part L in inner wall part 26c The state that circumferentially spaced distance between next week end face Lb4 reduces.

But even if in inner wall part 26c, last week end face La3 and end face last week Lb3 and next week end face La4 and next week end Face Lb4 is close to each other because of the thermal expansion, but not abuts.

Similarly, even if in inner wall part 26c, relative to the preparatory process for becoming room temperature, become 1000 DEG C or more of lifting It in process etc., is not influenced by the dilation because of cutting plate 22a, 22b caused by the temperature difference, sliding surface La1 and sliding surface Lb1 are tieed up Hold the state to contact with each other.Therefore, even if temperature declines and divides in the case where temperature rises and cutting plate 22a, 22b expand In the case that pitch cutting 22a, 22b are shunk, can independently it maintain for inner wall part 26c with its temperature change in radially inner and outer position The sealing state set.

Also, as shown in figure 8, its lower end edge internal perisporium 26c of the inner circumferential side of heat insulating member 28 configure, heat insulating member 28 it is interior Side lower end is capped in a manner of not exposing to 16 side of silicon single crystal internal perisporium 26c.

Even if in the present embodiment, can also play effect identical with above-mentioned embodiment, and can be avoided The fine clast etc. of the carbon fiber generated from heat insulating member 28 store in base plate 22 and the near border of internal perisporium 26c and It disperses into chamber 11.

In present embodiment, the lifting of silicon single crystal is carried out using the heat shield component 20 for becoming above structure, calculates heat The crackle generated in shield member 20.As a result, compared with the case where using undivided base plate, crackle can be completely eliminated It generates.Also, in the silicon single crystal 16 lifted, the axial length ratio for generating the region of dislocation is calculated, that is, is being lifted In silicon single crystal, the axis direction length in these regions accounts for the ratio of monocrystalline overall length.Divide each other by 120 ° of diameter as a result, Form 2 cutting plates, but with not set sliding surface and the circumferential end faces of the cutting plate only mutually opposed state phase not being overlapped Than that the incidence of dislocation can be reduced to 1/10 relative to the total of the axial length value of the silicon single crystal lifted.

Hereinafter, with reference to the accompanying drawings, to the 6th embodiment of single crystal pulling apparatus according to the present invention, heat shield component into Row explanation.

Figure 10 is the top view for indicating the base plate in present embodiment.

Difference in present embodiment from the 1st above-mentioned embodiment is the configuration of cutting part, about in addition to this Corresponding constitutive requirements, mark same reference numerals and the description thereof will be omitted.

In present embodiment, as shown in Figure 10, circumferential position is set in such a way that cutting part L mutually has 120 ° of central angle Set, setting 3 at cutting part L and base plate 22 is divided into 3 cutting plates 22a, 22b, 22c.Also, at as therein 1 Cutting plate 22a and cutting plate 22c between the not set notch section 25 of cutting part L.

In the cutting part L for not having the notch section 25, cutting plate 22a is provided with upper end La2, is set in cutting plate 22c It is equipped with upper end Lb2.Therefore, the circumferential both ends of cutting plate 22c are provided with upper end La2 and upper end Lb2.

According to the present embodiment, effect identical with above-mentioned embodiment can be also played, and reduces cutting plate 22a, 22b, the weight of 22c can be improved the operability in assembling.

Hereinafter, with reference to the accompanying drawings, to the 7th embodiment of single crystal pulling apparatus according to the present invention, heat shield component into Row explanation.

Figure 11 is the top view for indicating the base plate in present embodiment.

In present embodiment, as shown in figure 11, circumferential position is set in such a way that cutting part L mutually has 180 ° of central angle It sets.

Hereinafter, being carried out with reference to the accompanying drawings to the 8th embodiment of single crystal pulling apparatus according to the present invention, heat shield component Explanation.

Figure 12 is the positive view for indicating the heat shield component in present embodiment.

Difference in present embodiment from above-mentioned each embodiment is the inner circumferential side structure of heat shield component, about Corresponding constitutive requirements in addition to this, simultaneously the description thereof will be omitted for mark same reference numerals.

In present embodiment, as shown in figure 12, inside is provided in a manner of connecting by 26 position of inner circumferential with base plate 22 Cover 36.

As shown in figure 12, inside cover 36 become base plate 22 inner circumferential side 26 complete cycle of opening portion, with its lower end 36a phase The mode connect is circumferentially arranged, and configures in a manner of the inner peripheral surface to cover entire heat insulating member 28.

That is, inside cover 36 includes cylindric lower cylindrical portion 36b, in order to corresponding with the recess portion 28a in heat insulating member 28, Connect with the opening portion 26 of base plate 22；Convexity edge 36c, it is prominent with complete cycle outward from the upper end of lower cylindrical portion 36b；Upper circle Canister portion 36d, therefrom the periphery of flange part 36c erects；And upper flange part 36e, from the upper end of upper cylindrical portion 36d outward with whole Week is prominent.

The periphery of upper flange part 36e is almost abutted with 21 inner face of main part, is constituted in a manner of not exposing heat insulating member 28.

The lower end 36a of inside cover 36 is placed in the upside of base plate 22 in 26 position of inner circumferential.

Also, inside cover 36, can be by graphite or (the carbon fiber increasing of CC composite wood in the same manner as main part 21 or base plate 22 Strong carbon composite wood) etc. formed, moreover, the coating based on SiC can be implemented on its surface.In addition, the thickness about inside cover 36 Size, can be identical as main part 21 or base plate 22, or is set with amount corresponding with these weight are not supported slightly unfertile land.

In present embodiment, by inside cover 36 with the short transverse overall length of the inner circumferential side of heat insulating member 28 and upside Face is not covered to the mode that 16 side of silicon single crystal is exposed.

In the present embodiment, effect identical with above-mentioned embodiment can be also played, and passes through inside cover 36, It can be avoided the fine clast of carbon fiber etc. generated from heat insulating member 28 to disperse into chamber 11.Moreover, passing through inside cover 36 can slide with 22 split settings of base plate, inside cover 36 in lower end 36a and base plate 22, be able to suppress the generation of inside cover 36 Crackle.

Hereinafter, with reference to the accompanying drawings, to the 9th embodiment of single crystal pulling apparatus according to the present invention, heat shield component into Row explanation.

Figure 13 is the positive view for indicating the heat shield component in present embodiment.

Difference in present embodiment from the 8th above-mentioned embodiment is heat insulating member and inside cover, about removing Corresponding constitutive requirements other than this, simultaneously the description thereof will be omitted for mark same reference numerals.

In present embodiment, as shown in figure 13, heat insulating member 28A is compared with the height dimension of main part 21, to only reach to The mode of its midway is set as lower height.Therefore, heat insulating member 28A is configured to substantially annulus column, can match above it Set the water cold sleeve 29 as cooling component.

Here, in the upper side position of the main part 21 opposed with water cold sleeve 29 of main part 21, preferably with main part 21 with The separated mode of water cold sleeve 29 configures.

In present embodiment, inside cover 36 is configured in a manner of covering the inner circumferential side of all heat insulating member 28A, and have with Cylindric lower cylindrical portion 36b that the opening portion 26 of base plate 22 connects and from the upper end of lower cylindrical portion 36b outward with complete cycle Upper flange part 36e outstanding.

Also, inside cover 36 is identically as main part 21 or base plate 22, can pass through graphite or CC composite wood (carbon fiber Enhance carbon composite wood) etc. formed, moreover, can its surface apply the coating based on SiC.In addition, the thickness gauge of inside cover 36 It is very little can be identical as main part 21 or base plate 22, or with amount corresponding with these weight can not be supported slightly unfertile land set.

Present embodiment is not revealed by inside cover 36 with all faces of the inner circumferential side of heat insulating member 28 to 16 side of silicon single crystal Mode out covers.

In present embodiment, effect identical with above-mentioned embodiment is also played, and can keep away by inside cover 36 The fine clast etc. for exempting from the carbon fiber generated from heat insulating member 28 disperses into chamber 11.Moreover, by the inside of split settings Cover 36 and base plate 22, inside cover 36 can slide in lower end 36a and base plate 22, be able to suppress inside cover 36 and crack.

According to the present embodiment, effect identical with above-mentioned embodiment can be played, and notch section 25 will be passed through Diameter be divided into two as cut-off rule and by base plate 22, therefore do not fallen off from main part 21 with these cutting plates 22a, 22b Mode kept respectively with stable state.

In above-mentioned each embodiment, in cutting part, last week end face La3, Lb3 and next week end face La4, Lb4 to substantially lead Vertical direction extends, and is set, but as shown in Figure 14,15 in a manner of being parallel to each other, can be end face last week La3, Lb3 and next week end Face La4, Lb4 are to inclined structure other than substantially vertical direction.And the inclined direction does not also limit.

Furthermore, it is possible to for base plate 22 periphery 27 from the lower end of main part 21 to radial outside structure outstanding.As a result, Gas flow optimized and other effects can be obtained.

Description of symbols

1- single crystal pulling apparatus, 10- silica crucible (crucible), 11- chamber, 12- support shaft, 13- heater, 14- lift steel wire, 15- melted silicon (melt), 16- silicon single crystal (monocrystalline), T- crystal seed, 20- heat shield component, 21- main part, 22- base plate, 22a, 22b, 22c- cutting plate, 23- flange part, 24- support portion, 25- notch section, 26- inner circumferential (opening portion), 26c- inner wall part, outside 27- Week, 27a- support slot, 28,28A- heat insulating member, 28a- recess portion, 29- water cold sleeve (cooling component), 36- inside cover, under 36a- It holds, cylindrical portion under 36b-, 36c- convexity edge, the upper cylindrical portion of 36d-, 36e- upper flange part, L- cutting part, La1, Lb1- sliding Face, the upper end La2, Lb2-, end face last week La3, Lb3-, the next week end face La4, Lb4-, the lower end La5, Lb5-.

Claims

1. a kind of heat shield component, in the monocrystalline based on the Czochralski method from the melt pulling single crystal being stored in crucible In pulling apparatus, to carrying out heat shielding around the monocrystalline, which is characterized in that have:

Cylindrical body portion, configures in a manner of around the monocrystalline and lower end reaches the position far from the molten surface； And circular base plate, than the lower end of the main part more to radially extending and arranged opposite with the molten surface,

Also, it is provided in the segregated portion with the base plate main surface parallel and extends in the circumferential and when overlook view is mutual The sliding surface of coincidence can absorb the thermal deformation of the base plate in the circumferential.

2. heat shield component according to claim 1, which is characterized in that

It is provided with notch section in the base plate, which divides along by the line segment of the notch section.

3. heat shield component according to claim 1, which is characterized in that

Extend radially in the divided base plate and mutually opposed end face in the circumferential direction of the base plate to have There is predetermined distance and separated mode configures.

4. heat shield component according to claim 2, which is characterized in that

It is provided with notch section described in many places, and each other with the circumferential position of the notch section in the inner peripheral portion of the base plate It is not configured in same mode diametrically.

5. heat shield component according to claim 1, which is characterized in that

On the upside of the base plate, heat insulating member is provided in a manner of covering these medial surface on the inside of the main part.

6. heat shield component according to claim 5, which is characterized in that

The recess portion that configuration carries out cooling cooling component to the monocrystalline lifted in the heat insulating member is set to inner side.

7. a kind of single crystal pulling apparatus, special based on the Czochralski method from the melt pulling single crystal being stored in crucible Sign is,

As the heat shield component covered around the monocrystalline, heat shielding described in any one of claims 1 to 6 has been used Component.

8. single crystal pulling apparatus according to claim 7, which is characterized in that

It is provided on the inside of the heat insulating member and carries out cooling cooling component to the monocrystalline lifted.

9. a kind of single crystal pulling method, which is characterized in that

Monocrystalline is lifted using single crystal pulling apparatus as claimed in claim 7.