KR100831809B1 - Heater used for growing ingot based on czochralski technology and apparatus using the same - Google Patents

Abstract

A heater for growth of ingot based on Czochralski technology and an apparatus for producing single crystal ingot using the same are provided to increase the growth rate of the ingot using a heater having a local heating area. A vertical heating unit(100a) is disposed in parallel with a sidewall of a quartz furnace(100), and an inclined heating unit(100b) extends from a lower end of the vertical heating unit along a round portion of the quartz furnace. A local heating area(100c) is formed to provide a heat distribution profile(140) inclined towards a hot melt region(H) to a region which is overlapped with an inner surface of the inclined heating unit. The local heating area is formed over a boundary point between the vertical heating unit and the inclined heating unit.

Description

Heater used for growing ingot based on Czochralski method and apparatus for producing single crystal ingot {1) used for growing ingot based on Czochralski technology and Apparatus using the same

The following drawings attached to this specification are illustrative of preferred embodiments of the present invention, and together with the detailed description of the invention to serve to further understand the technical spirit of the present invention, the present invention is a matter described in such drawings It should not be construed as limited to.

FIG. 1 is a diagram showing heat distribution profiles formed by a heater at the beginning and the end of a process during ingot growth by the Czochralski method.

2 is a cross-sectional view showing the structure of a heater according to a first embodiment of the present invention.

3 is an enlarged cross-sectional view illustrating an annular heating band installed in the local heating section of FIG. 2.

FIG. 4 is a view showing a heat distribution profile formed by a heater at a later stage of a process when growing a single crystal ingot using a heater according to the first embodiment of the present invention.

5 is a cross-sectional view showing the structure of a heater according to a second embodiment of the present invention.

6 is a cross-sectional view showing the structure of a heater according to a third embodiment of the present invention.

7 is a block diagram of a silicon single crystal ingot manufacturing apparatus according to a preferred embodiment of the present invention.

8 is a view showing the structure of a heater used in the simulation according to the present invention.

FIG. 9 is a graph showing the results of simulating the vertical temperature gradient from the solid-liquid interface to the melt side when the silicon single crystal ingot is manufactured using the three heaters shown in FIG. 8.

FIG. 10 is a graph showing the results of simulating the shape of the solid-liquid interface when the silicon single crystal ingot is manufactured using the three heaters shown in FIG. 8.

<Main reference number in drawing>

100, 200, 300: heater 110: quartz crucible

120: crucible support 100a: vertical heating portion

100b: inclined heating portion 100c: local heating section

M: Silicone Melt H: High Temperature Melt Section

150: annular opening 160: annular heating band

140, 210, 310: heat distribution profile

The present invention relates to a heater used in an ingot growth apparatus using the Czochralski method, and more particularly, a heater providing an optimized heat distribution profile for rapidly growing a defect-free ingot of good quality and the same. It is related with the single crystal ingot manufacturing apparatus provided.

Monocrystalline silicon used for the manufacture of semiconductor devices is usually produced by the Czochralski method. In the Czochralski method, polycrystalline silicon is filled into a quartz crucible provided on a graphite eggplant support, and then the polycrystalline silicon is heated with a heater surrounding the outer circumferential surface of the quartz crucible to be melted into a liquid phase. Then, the seed made of the single crystal is brought into contact with the melt surface in the quartz crucible, and then slowly pulled while rotating the seed, the single crystal silicon ingot starts to grow from the solid-liquid interface. At this time, the shape of the solid-liquid interface on which the ingot is grown is convex upward. When the seed is pulled up, a single crystal neck is initially formed. When the neck is formed, the seeding speed is reduced to expand the diameter of the growing ingot to a desired diameter. After the diameter of the ingot is expanded, the seed is raised while controlling the temperature and the pulling speed of the silicon melt to grow the body of the ingot having a constant diameter. If the ingot grows slowly, the silicon melt is used up and the height of the solid-liquid interface is lowered. Therefore, as the ingot grows slowly, the silicon crucible is gradually raised while rotating the silicon crucible in a direction opposite to the direction of rotation of the seed to maintain the same height of the solid-liquid interface. In the latter part of the ingot growth, the diameter of the single crystal gradually decreases to make the shape of the bottom of the ingot end-cone. Typically end-cones are formed by increasing the rate of single crystal pulling and increasing the amount of heat supplied to the quartz crucible. Through this process, when the radius of the ingot becomes small enough, the ingot is completely separated from the solid-liquid interface to complete the growth of the silicon single crystal ingot.

Conventional heaters used to melt polycrystalline silicon filled in a quartz crucible are mostly vertical electric resistance heaters installed at a predetermined distance from the sidewall of the quartz crucible. The electric resistance heater is composed of a resistive heating material such as graphite, and when current flows through the heater, heat is generated by the intrinsic electric resistance of the heater. At this time, the amount of heat generated from the heater is proportional to the electrical resistance of the heater. Heat generated from the heater is radiated through the crucible support into the quartz crucible and the polycrystalline silicon therein. When the polycrystalline silicon in the quartz crucible is heated above the melting temperature by heat radiation, the polycrystalline silicon is melted in the liquid phase.

It is well known that increasing the vertical temperature gradient (crystal side) at the solid-liquid interface in the production of single crystal silicon ingots by the Czochralski method can increase the rate of defect-free single crystal growth. In recent years, it has been proved through experiments that the higher the convex shape of the solid-state interface, the higher the growth rate of the defect-free crystals can be obtained ([1] K.-H. Kim, B.-C. Sim, I.-S. Choi, H.-W. Lee, Point defect behavior in Si crystal grown by electromagnetic Czochralski (EMCZ) method, Journal of Crystal Growth, In press, 2006. [2] BC.Sim, Y.-H Jung, J.-E. Lee, H.-W. Lee, Effect of the crystal-melt interface on the grown-in defects in silicon CZ growth, Journal of Crystal Growth, In press, 2006.). In order to increase the convexity of the solid-liquid interface, it is important to increase the vertical temperature gradient from the solid-liquid interface to the melt side. The conventional vertical electric resistance heater keeps the vertical temperature gradient to the melt side continuously high throughout the process. There was a limit.

FIG. 1 is a diagram illustrating a heat distribution profile formed in a heater at an early stage of ingot growth and a heat distribution formed by a heater at a late stage of ingot growth.

Referring to the drawings, when the silicon melt (M) is heated using the vertical electric resistance heater 10, during ingot growth (see (a)) of the heat distribution profile 15 formed by the electric resistance heater 10 The hottest point A is approximately at the midpoint between the solid-liquid interface 20 and the bottom of the quartz crucible 30. By the way, when going to the latter part of the growth (see (b)) of the ingot (C), the silicon melt (M) is consumed and the height of the solid-liquid interface 20 is lowered, so as the growth of the ingot (C) proceeds, The quartz crucible 30 is slowly raised to maintain a constant level. Therefore, the maximum temperature point A of the heat distribution profile 15 formed by the electric resistance heater 10 becomes lower and lower toward the bottom surface of the quartz crucible 30. As a result, the heat distribution formed in the silicon melt (M) is different from the first half and the second half of the growth of the ingot (C). If the amount of current supplied to the electric resistance heater 10 is constant, the vertical temperature gradient toward the melt side near the solid-liquid interface 20 decreases toward the latter part of the ingot. As the ingot C grows as described above, if the heat distribution formed on the silicon melt M is moved downward, the temperature of the silicon melt M cannot be stably maintained. This problem affects the shape of the solid-liquid interface 20 toward the second half of the growth of the ingot C, thereby reducing the convexity of the solid-liquid interface 20, and consequently, reducing the growth rate of the defect-free ingot C.

As described above, the conventional electric resistance heater 10 leads to a reduction of the ingot growth rate as it goes toward the latter half of the growth of the ingot C. In the related art, the design of the electric resistance heater 10 is mostly used for the single crystal ingot C. The focus is on the control of the oxygen concentration, and it can be said that the defect has not been studied in depth between the ingot pulling rate and the heat distribution formed by the battery resistance heater 10.

Therefore, the present invention was devised to solve the above-mentioned problems of the prior art, and the heater that can optimize the radiant heat flowing into the silicon melt from the heater by optimizing the shape of the heater as well as the concentrated heating position of the heater in the Czochralski method. And the objective is to provide the single crystal ingot manufacturing apparatus provided with this heater.

Another object of the present invention is to increase the convexity of the solid-liquid interface by increasing the temperature of the hot melt region through the optimization of the heat flowing from the heater to the quartz crucible in the Czochralski method to improve the growth rate of the defect-free single crystal ingot The present invention provides a heater capable of increasing the productivity of a single crystal ingot and a single crystal ingot manufacturing apparatus including the heater.

The heater used in the apparatus for producing a single crystal ingot by the Czochralski method according to the present invention for achieving the above technical problem is a vertical heating portion parallel to the side wall of the quartz crucible, and a curved portion of the quartz crucible from the lower end of the vertical heating portion According to claim 1, the inclined heating unit extends, and a local heating section is provided to provide a heat distribution profile inclined toward the hot melt region in an area at least partially overlapping the inner surface of the inclined heating unit.

In order to achieve the above technical problem, the apparatus for manufacturing single crystal ingot according to Czochralski method according to an aspect of the present invention is a quartz crucible containing a semiconductor melt, which is an object of ingot growth, and a close coupling with an outer peripheral surface of the quartz crucible. And a crucible support for supporting the shape of the quartz crucible, and a heating space through which the crucible support can be drawn in or drawn out along the crystal axial direction of the ingot, and a vertical heating portion parallel to the sidewall of the quartz crucible and the vertical heating portion A local heating section having an inclined heating portion extending from a lower end along a curved portion of the quartz crucible, and providing a heat distribution profile toward a high temperature melt region of the semiconductor melt in an area at least partially overlapping the inner surface of the inclined heating portion; A single crystal seed is placed on the heater and the surface of the semiconductor melt contained in the quartz crucible. After contacting, the single crystal ingot raising means for pulling up the seed while rotating the seed in a constant direction and the crucible support are gradually raised so that the position of the solid-liquid interface is maintained at a constant level while rotating the crucible support in a direction opposite to the direction of rotation of the seed. And a rotating mount.

In accordance with another aspect of the present invention for achieving the above technical problem, the apparatus for producing a single crystal ingot by the Czochralski method includes a quartz crucible containing a semiconductor melt, which is an object of ingot growth, and a quartz crucible in combination with an outer circumferential surface of the quartz crucible. A region which supports the shape of the crucible and has a vertical heating portion parallel to the sidewall of the quartz crucible and an inclined heating portion extending from the lower end of the vertical heating portion along the curved portion of the quartz crucible, the region overlapping at least a portion with an inner surface of the inclined heating portion; A heater having a local heating section for providing a heat distribution profile toward the high temperature melt region of the semiconductor melt, and a single crystal seed contacting the surface of the semiconductor melt contained in the quartz crucible and rotating the seed in a predetermined direction upwards. Rotation room of seed which raises single crystal ingot raising means to raise and the said heater And, while rotating in opposite directions characterized in that it comprises a rotating mounting to gradually raise the heater is a solid-liquid interface position is maintained at a constant level.

In the present invention, the local heating section may be formed over a boundary point between the vertical heating unit and the inclined heating unit.

Preferably, the local heating section is an opening recessed to a predetermined depth from the inner surface of the heater body. More preferably, the opening is an annular opening formed along the circumference of the quartz crucible.

Alternatively, the local heating section is a heating band that is attached to the inner surface of the heater body to supply a current separately from the heater body. Preferably, the heating band is an annular heating band attached annularly along the circumference of the quartz crucible.

Preferably, the angle formed between the maximum value axis of the heat distribution profile and the axis of rotation of the quartz crucible is 30 to 60 degrees.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, the terms or words used in this specification and claims should not be construed as being limited to the ordinary or dictionary meanings, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention. Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiments of the present invention and do not represent all of the technical idea of the present invention, various equivalents that may be substituted for them at the time of the present application It should be understood that there may be water and variations.

Meanwhile, in the embodiments described below, the semiconductor single crystal ingot manufactured by the semiconductor single crystal ingot manufacturing apparatus is a silicon single crystal ingot. However, the present invention is not limited to the specific kind of semiconductor material constituting the ingot. In addition, when describing the structure of the heater according to an embodiment of the present invention to illustrate the components around the heater to help the convenience of the description of the heater.

2 is a cross-sectional view showing the structure of a heater according to a first embodiment of the present invention.

Referring to Figure 2, the heater 100 according to the present invention is used as a heat source for providing radiant heat in the apparatus for producing single crystal ingot by the Czochralski method. The inner side of the heater 100 is closely coupled with the outer surface of the quartz crucible 110 and the quartz crucible 110, which accommodates the silicon melt (M) for manufacturing the silicon single crystal ingot (C) of the quartz crucible 110 A crucible support 120 supporting the shape is provided. Here, the material of the crucible support 120 is graphite. However, the present invention is not limited thereto.

The heater 100 is installed to surround the curved portion of the side wall and the side wall bottom of the crucible support 120. In addition, the heater 100 extends along the curved portion of the quartz crucible 110 from the lower end of the vertical heat generating portion 100a and the vertical heat generating portion 100a parallel to the sidewall of the quartz crucible 110, thereby gradually decreasing the width of the cross section. It is provided with an inclined heating portion 100b. The inner side surface of the inclined heating unit 100b includes a local heating section 100c which provides a heat distribution profile 140 inclined at a predetermined angle toward the high temperature melt region H under the solid-liquid interface 130. . Here, the high temperature melt region H refers to a region near the point where the temperature is highest when the temperature is measured according to the depth of the silicon melt M at the lower portion of the solid-liquid interface 130. Preferably, the material of the heater 100 is graphite. However, since various heating materials may be used in addition to graphite, the present invention is not limited by the material of the heater 100.

The local heating section 100c is a heating section having a thickness smaller than the basic thickness of the vertical heating section 100a and the inclined heating section 100b. That is, the local heating section 100c is an annular band opening 150 recessed a predetermined depth from the inner sidewall of the heater 100. The shape of the opening 150 may be any shape as long as it can reduce the thickness of the wall of the heater 100 such as a quadrangle, trapezoid, and semicircle.

Since the thickness of the local heating section 100c is smaller than the thickness of the other heating sections 100a and 100b, the electrical resistance is greater. This is because the electrical resistance is inversely proportional to the area of the cross section through which current flows. Therefore, when a current is supplied to the heater 100, heat is concentrated in the local heating section 100c than in the other heating section. As a result, the heat distribution profile 140 provided by the heater 100 to the silicon melt M is further increased in maximum value compared to the heat distribution profile provided by the conventional heater (see FIG. 1) and the profile 140 is increased. ) Has a narrower shape, and its direction is toward the hot melt region H under the solid-liquid interface 130. When the heat distribution profile 140 is formed as described above, assuming that the same current is being supplied to the heater 100, the amount of radiant heat transferred per unit time to the high temperature melt region H increases. Then, the temperature gradient from the solid-liquid interface 130 to the silicon melt (M) side is increased, and as a result, the driving force to move the silicon atoms to the solid-liquid interface 130 is increased, thereby increasing the convexity of the solid-liquid interface 130. Accordingly, the pulling speed of the defect-free single crystal ingot is improved. The theoretical background is explained as follows.

 The dominant point defect introduced into the ingot C through the solid-liquid interface 130 during silicon single crystal ingot growth is determined by the single crystal pulling rate and the temperature gradient of the growth system. Since the temperature gradient is a value near the solid-liquid interface 130, the temperature gradient in the crystal and the temperature gradient in the melt are affected. This can be seen as a heat balance equation according to Equation 1 below, and the temperature gradient of the single crystal and the temperature gradient of the melt have a proportional correlation with each other.

k _S G _S = k _L G _L + L _f V

k _S : Solid (single crystal) heat transfer coefficient, G _S : Solid (single crystal) temperature gradient

k _L : Liquid (melt) heat transfer coefficient, G _L : Liquid (melt) temperature gradient

L _f : latent heat of crystallization, V: growth rate

According to Mr. Voronkov's theory, the defect ingot growth condition satisfies the condition of V / G _s = C. Here, V is the growth rate of the ingot, G _s is the vertical temperature gradient of the crystal side at the solid-liquid interface 130, C is a constant. According to the above condition, it can be seen that in order to increase the growth rate of the defective ingot, it is necessary to increase the vertical temperature gradient from the solid-liquid interface to the crystal side through an effective ingot cooling mechanism. However, according to the thermal balance equation, the vertical temperature gradient G _s on the crystal side and the vertical temperature gradient G _L on the melt side are proportional to each other at the solid-liquid interface 130. Therefore, the defect-free ingot growth condition [V / G _s = C] can be expressed as [V / G _L = C '] by converting using the vertical temperature gradient G _L on the melt side. According to this conditional expression, in order to increase the growth rate of the defect-free ingot, the structure of the heater, the location of the local heating section 100c, the angle of the heat distribution profile 140, and the like are adjusted to be perpendicular to the melt side at the liquid-liquid interface 130. It can be seen that the temperature gradient G _L must be increased. Therefore, as the present invention proposes, the heat distribution profile 140 is provided toward the hot melt region H by the local heating section 100c of the heater 100 so that the vertical temperature gradient G _L on the melt side is increased. In proportion to C ', the effect of increasing the pulling speed V of an ingot is increased.

On the other hand, the maximum value axis of the heat distribution profile 140 formed by the local heating section 100c preferably forms an angle (θ) of 30 to 60 degrees with the ingot central axis (X). Outside the angular range, the convective stability of the silicon melt (M) is lowered and the increase in the vertical temperature gradient from the solid-liquid interface 130 to the melt side is not large, so it is difficult to expect a substantial increase in the defect-free single crystal growth rate. In particular, when the angle range approaches 0 degrees, oxygen is eluted from the bottom surface of the quartz crucible 110 and diffused into the ingot C through the solid-liquid interface 130, making it difficult to control oxygen impurities.

Meanwhile, as illustrated in FIG. 3, an annular heating band 160 capable of supplying current independently of the heater 100 may be attached to the opening 150 constituting the local heating section 100c. In some cases, the annular opening 150 may be filled with the same material as the other materials constituting the other heating sections 100a and 100b, and then the annular heating strip 160 may be attached thereto. After the annular heating band 160 is added to the local heating section 100c as described above, when the electric power larger than the heater 100 is supplied to the annular heating band 160, the local heating section 100c is opened through the annular opening 150. Since the same effect as that of the configuration occurs, it is possible to increase the defect-free single crystal growth rate.

4 illustrates a state in which the crucible support 120 is raised as the process is performed in the second half during the production of the silicon single crystal ingot.

Referring to the figure, even if the crucible support 120 is raised, the heat distribution profile 140 provided by the heater 100 still faces the hot melt region H under the solid-liquid interface 130. Therefore, the vertical temperature gradient of the melt side at the solid-liquid interface 130 can be largely maintained even in the latter part of the process of manufacturing the silicon single crystal ingot. Therefore, even if the process is shifted to the latter part of the ingot production, the convexity of the solid-liquid interface 130 is maintained to prevent the reduction of the defect-free single crystal growth rate. As a result, there is an effect that the overall productivity is improved compared to the silicon single crystal ingot manufacturing method using a conventional heater.

5 is a cross-sectional view showing a heater structure according to a second embodiment of the present invention. Referring to the drawings, the heater 200 according to the second embodiment of the present invention except that the local heating section 200c is formed over the boundary point between the vertical heating unit 200a and the inclined heating unit 200b Same as the first embodiment described above. Since the heat distribution profile 210 provided by the heater 200 according to the second embodiment also effectively transmits radiant heat to the high temperature melt region H, the vertical temperature gradient G _L from the solid-liquid interface 130 to the melt side and By increasing the convexity of the solid-liquid interface 130, the pulling speed of the defect-free single crystal ingot can be improved.

6 is a cross-sectional view showing a heater structure according to a third embodiment of the present invention. Referring to the drawings, the heater 300 according to the third embodiment of the present invention is integrally formed with the quartz crucible 110 to perform the function of the crucible support. Therefore, unlike the first and second embodiments, the heater 300 according to the third embodiment is provided with a bottom heating part 300d. Except for this difference, the rest of the configuration of the heater 300 according to the third embodiment is substantially the same as the first embodiment described above. The position of the local heating section 300c in the heater 300 according to the third embodiment may be in the section of the inclined heating unit 300b as shown in the figure, and the vertical heating unit 300a and the inclined heating unit 300b. It may span the boundary point of. Meanwhile, the heater 300 according to the third embodiment rotates together with the quartz crucible 110 and rises up as the growth of the single crystal ingot proceeds. Therefore, even if the second half of the single crystal growth, there is almost no difference in the relative position of the hot melt region (H) and the heat distribution profile (310). Accordingly, the heater 300 according to the third embodiment may provide the most stable heat distribution profile 310. Since the heat distribution profile 310 provided by the heater 300 according to the third embodiment also effectively transmits radiant heat to the hot melt region H, the vertical temperature gradient G _L from the solid-liquid interface 130 to the melt side and By increasing the convexity of the solid-liquid interface 130, the pulling speed of the defect-free single crystal ingot can be improved.

FIG. 7 is a schematic view illustrating an apparatus for manufacturing a silicon single crystal ingot equipped with a heater according to a preferred embodiment of the present invention.

Referring to the drawings, the silicon single crystal ingot manufacturing apparatus according to a preferred embodiment of the present invention includes a chamber 400 in which the silicon single crystal ingot is grown. A silicon crucible 420 is contained in the chamber 400, and an outer circumferential surface thereof is provided with a quartz crucible 420 surrounded by a crucible support 410 made of graphite. At this time, the crucible support 410 is fixedly installed on the rotary mount 430, the rotary mount 430 is rotated by a driving means (not shown) to raise while rotating the quartz crucible 420, the solid-liquid interface ( 435 to maintain the same height. The crucible support 410 is surrounded by the heater 440 at predetermined intervals, and the heater 440 is surrounded by the thermos 450. Here, the heater 440 according to the first embodiment of the present invention is employed as the heater 440. The heater 440 has a local heating section as described above, and provides a heat distribution profile 460 that enables effective radiant heat transfer to the high temperature melt region (H). The heat distribution profile 460 has already been described in detail. Meanwhile, the heater 440 may be replaced with a heater according to the second and third embodiments of the present invention. In particular, when the heater according to the third embodiment is employed, the crucible support 410 is omitted, and the quartz crucible 420 and the heater are mounted on the rotary mount 430. Therefore, the heater is also raised while being rotated together with the quartz crucible 420.

The heater 440 melts the high-purity polycrystalline silicon mass loaded in the quartz crucible 420 into the silicon melt M. The heater 440 then provides a heat distribution profile 460 that optimizes radiant heat transfer to the hot melt region (H). As a result, the vertical temperature gradient from the solid-liquid interface 435 to the melt side and the convexity of the solid-liquid interface 435 are increased to improve the defect growth rate of the single crystal ingot.

The thermostat 450 prevents heat emitted from the heater 440 from being diffused toward the wall of the chamber 400 to improve thermal efficiency. In addition, a heat shield 470 is disposed between the silicon single crystal ingot C and the quartz crucible 420 to block the heat radiated from the ingot C. In this case, the heat shield 470 may be attached to the closest portion with the ingot C to install a cylindrical heat shield 480 to further block the heat flow to conserve heat. The heat shield 480 has a top surface of the silicon melt M and a predetermined heat shield gap.

In addition, an upper portion of the chamber 400 is provided with an pulling means (not shown) for winding up and pulling the cable, and the lower portion of the cable is in contact with the silicon melt M in the quartz crucible 420 and is pulled up to form a single crystal. A single crystal seed for growing the ingot C is provided. The pulling means rotates while winding the cable when the single crystal ingot C grows, wherein the silicon single crystal ingot C is rotated about the same axis as the rotation axis X of the crucible 420. Pull it while rotating in the opposite direction.

In the upper portion of the chamber 400, an inert gas such as argon (Ar), neon (Ne), and nitrogen (N) is supplied to the grown single crystal ingot (C) and the silicon melt (M). Discharge through the bottom of the chamber 400.

The single crystal ingot manufacturing apparatus according to the present invention described above can effectively transmit radiant heat to a high temperature melt region to increase the vertical temperature gradient to the melt side and the convexity of the solid-liquid interface to improve the growth rate of the defect-free ingot.

<Simulation Result>

Hereinafter, a simulation result of the vertical temperature gradient from the solid-liquid interface to the melt side and the shape of the solid-liquid interface when the radiant heat is transferred to the quartz crucible using three heaters as shown in FIG. 8 will be described. In Fig. 8, (a) is a case where a local heating section is provided in the vertical heating section, and the heat distribution profile is substantially parallel to the upper surface of the silicon melt. And (b) and (c) correspond to heater structures according to the first and second embodiments of the present invention, respectively. In the simulation, the ingot rotation rate (Crystal rotation) was set to 13rpm, the crucible rotation rate is 0.1rpm, the pulling speed of the single crystal is 0.6mm / min, the single crystal diameter is 206mm.

9 is a graph showing a simulation of the vertical temperature gradient from the solid-liquid interface to the melt side. Referring to the drawings, when the heaters according to the first and second embodiments are used, the vertical temperature gradient toward the melt side increases, and the temperature gradient increases by up to 16% compared to the comparative example. In particular, the comparative example has a higher concentration of radiant heat than the conventional vertical heater having no local heating section. Therefore, it is obvious that the vertical temperature gradient control toward the melt side will be more effective than the conventional vertical heaters if the heat distribution profile is directed to the hot melt region using the heaters as in the first and second embodiments.

10 is a graph simulating the shape of the solid-liquid interface. Referring to the drawings, it can be seen that the convexity of the solid-liquid interface can be increased by using the heaters according to the first and second embodiments compared to the comparative example. This is because the vertical temperature gradient toward the melt side is increased and the driving force to move the silicon atoms to the solid-liquid interface is increased. In particular, the comparative example has a higher radiant heat concentration efficiency than the conventional vertical heater having no local heating section. Therefore, it is obvious that directing the direction of the heat distribution profile to the high temperature melt region using the heaters as in the first and second embodiments will be more effective in increasing the driving force of the silicon atoms to move to the solid-liquid interface.

As described above, although the present invention has been described by way of limited embodiments and drawings, the present invention is not limited thereto and is intended by those skilled in the art to which the present invention pertains. Of course, various modifications and variations are possible within the scope of equivalents of the claims to be described.

 According to the present invention, by providing a local heating section in the heater that can effectively transmit radiant heat to the hot melt region, the vertical temperature gradient from the solid-liquid interface to the melt side and the convex increase of the solid-liquid interface are increased to improve the speed of flawless ingot pulling. You can. In particular, during the production of single crystal ingots, the vertical temperature gradient toward the melt side and the convexity of the solid-liquid interface can be maintained in the latter part of the process, thereby improving overall productivity of the single crystal ingot manufacturing process.

Claims (15)

In the heater used in the single crystal ingot production apparatus by Czochralski method, A vertical heating portion parallel to the sidewall of the quartz crucible; An inclined heating portion extending from the lower end of the vertical heating portion along the curved portion of the quartz crucible, And a local heat generation section is formed in a region where at least a portion of the inner surface of the inclined heating portion overlaps with the heat distribution profile inclined toward the high temperature melt region. The method of claim 1, The local heating section is characterized in that the heater is formed over the boundary point between the vertical heating portion and the inclined heating portion. The method of claim 1, The local heating section is a heater, characterized in that the opening recessed from the inner surface of the heater body. The method of claim 3, And the opening is an annular opening formed along a circumference of the quartz crucible. The method of claim 1, The local heating section is a heater characterized in that the heating strip is attached to the inner surface of the heater body to supply a current separately from the heater body. The method of claim 5, The heating strip is a heater characterized in that the annular heating strip attached to the annular along the circumference of the quartz crucible. The method of claim 1, And the angle formed between the maximum value axis of the heat distribution profile and the rotation axis of the quartz crucible is 30 to 60 degrees. A quartz crucible containing a semiconductor melt, which is an object of ingot growth; A crucible support coupled to the outer circumferential surface of the quartz crucible to support the shape of the quartz crucible; A heating space may be provided in which the crucible support may be drawn in or drawn out along the crystal axial direction of the ingot, and a vertical heating portion parallel to the sidewall of the quartz crucible and an inclined heating portion extending along a curved portion of the quartz crucible from the bottom of the vertical heating portion A heater having a portion, and having a local heating section for providing a heat distribution profile toward a high temperature melt region of the semiconductor melt in a region where at least a portion of the inner surface of the inclined heating portion overlaps; Single crystal ingot pulling means for contacting the surface of the semiconductor melt contained in the quartz crucible with the single crystal seed and pulling the top upward while rotating the seed in a predetermined direction; And Single crystal ingot manufacturing apparatus according to Czochralski method comprising a; rotating the crucible support to gradually raise the crucible support so that the position of the solid-liquid interface is maintained at a constant level while rotating the crucible support in the direction opposite to the rotation direction of the seed; . A quartz crucible containing a semiconductor melt, which is an object of ingot growth; Coupled to the outer circumferential surface of the quartz crucible to support the shape of the quartz crucible, and having a vertical heating part parallel to the sidewall of the quartz crucible and an inclined heating part extending along the curved portion of the quartz crucible from a lower end of the vertical heating part; A heater having a local heat generation section for providing a heat distribution profile toward a high temperature melt region of said semiconductor melt in a region at least partially overlapping an inner surface of said portion; Single crystal ingot pulling means for contacting the surface of the semiconductor melt contained in the quartz crucible with the single crystal seed and pulling the top upward while rotating the seed in a predetermined direction; And Single crystal ingot manufacturing apparatus according to Czochralski method, comprising; a rotary mount for gradually raising the heater so that the position of the solid-liquid interface is maintained at a constant level while rotating the heater in the direction opposite to the rotation direction of the seed. The method according to claim 8 or 9, The local heating section is formed over a boundary point between the vertical heating portion and the inclined heating portion, single crystal ingot manufacturing apparatus according to the Czochralski method. The method according to claim 8 or 9, And said local heat generating section is an opening recessed from an inner surface of the heater body. The method of claim 11, And said opening is an annular opening formed along the circumference of the quartz crucible. The method according to claim 8 or 9, The local heating section is attached to the inner surface of the heater body is a single crystal ingot manufacturing apparatus according to the Czochralski method, characterized in that the heating band for supplying a current separately from the heater body. The method of claim 13, The heating band is a single crystal ingot manufacturing apparatus according to the Czochralski method, characterized in that the annular heating band attached to the ring along the circumference of the quartz crucible. The method according to claim 8 or 9, An angle formed between the maximum value axis of the heat distribution profile and the axis of rotation of the quartz crucible is 30 to 60 degrees.

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