CN1094188A - GalnAs (GaInAs) lateral light electric transistor and integrated technology thereof - Google Patents
GalnAs (GaInAs) lateral light electric transistor and integrated technology thereof Download PDFInfo
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- CN1094188A CN1094188A CN93114285A CN93114285A CN1094188A CN 1094188 A CN1094188 A CN 1094188A CN 93114285 A CN93114285 A CN 93114285A CN 93114285 A CN93114285 A CN 93114285A CN 1094188 A CN1094188 A CN 1094188A
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- galnas
- light electric
- lateral light
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
GalnAs lateral light electric transistor and integrated technology thereof comprise two contents: the one, and a kind of even doping, the wide base that make according to the principle of lateral light electric transistor, emitter junction and collector junction are arranged in GalnAs epitaxial loayer top cross, the electrode symmetry, polarity is photoelectric device arbitrarily.The 2nd, GalnAs lateral light electric transistor (5) can be integrated on the GalnAs epitaxial loayer with junction field effect transistor (6), makes long wavelength's receiver that photoelectric device and electronic device integrate.Its great advantage is that two kinds of device epitaxial layers are shared; Process compatible, and long wavelength's receiver of making can be widely used in optical fiber communication receiver and repeater.
Description
The invention belongs to the optoelectronics field, particularly optoelectronic optoelectronic integrated technology field.
The photodetector that adopts in long wavelength's receiver photoelectricity is integrated has two kinds at present, a kind of is PIN photodiode, it is widely used as photodetector, run into difficulty when integrated but carry out monolithic with junction field effect transistor (JFET), PIN photodiode requires the extension bed thickness and doping content is extremely low.With than opposite, junction field effect transistor requires the thin and doping content height of epitaxial loayer.So can't on same epitaxial loayer, make photoelectric device and electronic device, researchers' doping content epitaxial loayer higher, thinner thickness that junction field effect transistor needs of have to growing earlier, the epitaxial loayer of the high concentration that the conduction of regrowth PIN photodiode thereon is required, the thick epitaxial layer of the utmost point low doping concentration that the photodiode depletion region of growing at last is required.The variation from high to lower of such doping content can't reach with liquid phase epitaxial technique, and metallo-organic compound vapour phase epitaxy (MOCVD) technology also difficulty meets the demands.The researcher need use these three epitaxial loayers of molecular beam epitaxy (MBE) fabrication techniques.Apparatus expensive, technical sophistication.Because PIN photodiode and junction field effect transistor be not on an epitaxial loayer, nonplanar structure causes difficulty for photoetching process and ohmic contact connecting line technics.Second kind is metal semiconductor metal photodetector (MSM Photodetector), it and gaas fet are done the integrated achieving success of monolithic photoelectricity, but the Schottky barrier of material GalnAs that can detect long wavelength 1.3-1.55 micron light signal is too low, can't directly make this structure, the researcher attempts to make superlattice with molecular beam epitaxy technique meets the demands the schottky barrier height of its top one deck, perhaps making non-coupling epitaxial loayer meets the demands the schottky barrier height of the superiors, these technology difficulty are very big, apparatus expensive can be shared with the electric device epitaxial loayer as the metal semiconductor metal photodetector during short wavelength's receiver photoelectricity is integrated so do not find as yet in the integrated development of long wavelength's receiver photoelectricity, the device architecture that technology is held altogether.
The objective of the invention is to overcome above-mentioned shortcoming and difficulty, provide a kind of can with GalnAs junction field effect transistor (GaInAs Junction Field Effect Transistor, the optoelectronic device structure that JFET) epitaxial loayer is shared, technology is held altogether-GalnAs lateral light electric transistor (GaInAs Lateral Phototransistor, LPT).
The present invention can make list-GalnAs epitaxial loayer with ripe liquid phase epitaxial method, and makes long wavelength's receiver photoelectricity integrated monolithic (technical term is called LPT+JFET) thereon.Also can be used for the high speed fibre transmission system as long wavelength's photoelectric detector separately, it is more much higher than the speed of response of PIN photodiode.
The present invention has proposed new explanation to the operation principle of GaAs metal semiconductor metal photodetector, think that it is actually the lateral light electric transistor that a base suspends naturally, so just not necessarily will make Schottky barrier, the present invention makes pnp type lateral light electric transistor on the GalnAs epitaxial loayer.
Fig. 1 is long wavelength's receiver photoelectricity integrated monolithic structure chart.
Wherein (1) is semi-insulating indium phosphorus substrate
(2) be n type GalnAs epitaxial loayer
(3) be P type layer
(4) be P type ohmic contact
(5) be the lateral light electric transistor
(6) be junction field effect transistor
(7) be gate electrode
(8) be the source electrode
(9) be drain electrode
The invention is characterized in, GalnAs lateral light electric transistor (5) and GalnAs junction field effect transistor (6) are produced on the same GalnAs epitaxial loayer.Go up the thick about 1 micron n type GalnAs epitaxial loayer (2) of epitaxial growth at semi-insulating indium phosphorus substrate (1), make a pair of P type layer (3) of staggered finger electrode shape at its top, go up making P type ohmic contact (4) at P type layer (3), form GalnAs lateral light electric transistor (5), meanwhile make the gate electrode Pn knot (7) of junction field effect transistor, make the source electrode (8) and the drain electrode (9) of ohmic contact then on its both sides.Wherein said P type ohmic contact (4), electrode are the staggered finger-like of symmetry, get final product receiving optical signals after being biased, and two electrodes can exchange, and photoelectric current increases with voltage.GalnAs lateral light electric transistor (5) is that with the transistorized difference of common photoelectric emitter and collector is transversely arranged on semi-conductive same surface, and base stage suspends naturally.When being used alone as photodetector, diffusion concentration does not need strict control, and base is to penetrating epitaxial loayer.Because electric capacity is little, can makes two-forty and receive usefulness.Electrode distance reduces, and can work under low-voltage.Described junction field effect transistor (6), gate electrode wherein (7) is made simultaneously with the P type layer (3) of lateral light electric transistor, and both sides are source electrode (8) and drain electrode (9).The advantage of above-described integrated technology is that epitaxial loayer is shared, technology is held altogether.
Claims (3)
1, a kind of GalnAs lateral light electric transistor and integrated technology thereof is characterized in that, GalnAs lateral light electric transistor (5) and GalnAs junction field effect transistor (6) are produced on same GalnAs place prolong on the layer (2).
2, by claim 1 described GalnAs lateral light electric transistor and integrated technology thereof, it is characterized in that, go up at semi-insulating indium phosphorus substrate slice (1) on the basis of the thin n type GalnAs epitaxial loayer (2) of epitaxial growth, make a pair of P type layer (3) of staggered finger electrode shape at its top, go up making P type ohmic contact (4) at P type layer (3), form GalnAs lateral light electric transistor (5).
3, by claim 1,2 described GalnAs lateral light electric transistor and integrated technologies thereof, it is characterized in that, in GalnAs lateral light electric transistor (5), make the gate electrode Pn knot (7) of junction field effect transistor, make the source electrode (8) and the drain electrode (9) of ohmic contact then in its both sides, form junction field effect transistor (6).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN93114285A CN1034251C (en) | 1993-11-11 | 1993-11-11 | Transverse GalnAs photoelectric transistor and its integrating technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN93114285A CN1034251C (en) | 1993-11-11 | 1993-11-11 | Transverse GalnAs photoelectric transistor and its integrating technique |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1094188A true CN1094188A (en) | 1994-10-26 |
| CN1034251C CN1034251C (en) | 1997-03-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN93114285A Expired - Fee Related CN1034251C (en) | 1993-11-11 | 1993-11-11 | Transverse GalnAs photoelectric transistor and its integrating technique |
Country Status (1)
| Country | Link |
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| CN (1) | CN1034251C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112510058A (en) * | 2020-12-16 | 2021-03-16 | 中山大学 | Integrated photoelectric sensor and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN86204468U (en) * | 1986-07-02 | 1987-01-28 | 武汉大学 | Silicon photosensitive triode for ultraviolet range |
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1993
- 1993-11-11 CN CN93114285A patent/CN1034251C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112510058A (en) * | 2020-12-16 | 2021-03-16 | 中山大学 | Integrated photoelectric sensor and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN1034251C (en) | 1997-03-12 |
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