JPH04155872A - Semiconductor photodetective element - Google Patents
Semiconductor photodetective elementInfo
- Publication number
- JPH04155872A JPH04155872A JP2280633A JP28063390A JPH04155872A JP H04155872 A JPH04155872 A JP H04155872A JP 2280633 A JP2280633 A JP 2280633A JP 28063390 A JP28063390 A JP 28063390A JP H04155872 A JPH04155872 A JP H04155872A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- light absorbing
- semiconductor
- absorbing layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 8
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 8
- 239000000969 carrier Substances 0.000 claims abstract description 7
- 230000031700 light absorption Effects 0.000 claims description 15
- 238000000605 extraction Methods 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 101150114751 SEM1 gene Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- -1 aluminum-indium-arsenic Chemical compound 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体受光素子に関し、特に詳細には、Ｍ Ｓ
Ｍ （Ｍｅｔａｌ Ｓｅｍ１ｃｏｎｄｕｃｔｏｒ Ｍ
ｅｔａｌ）構造のホトダイオードに関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor photodetector, and more particularly, to a semiconductor photodetector.
M (Metal Sem1 conductor M
etal) structure.
光通信に用いられるホトダイオードとして代表的なもの
に、縦型のｐ１ｎシリコンホトダイオードがある。とこ
ろで、ガリウム・砒素（Ｇａ Ａｓ ）などの化合物半
導体は禁制帯幅が大きいため、光通信のような長波長の
光受信には、そのまま用いることができない。そこで、
例えば特開平１−１４０６７９号では、縦型ｐｌｎ構造
のインジウム・リン（ＩｎＰ）ホトダイオードの光吸収
層に、エルビウム（Ｅ「）などの希土類元素をドープす
る技術が示されている。これによれば、Ｅｒは赤外光に
吸収効率を有しているので、長波長の光受信ができる。A typical photodiode used in optical communications is a vertical p1n silicon photodiode. By the way, compound semiconductors such as gallium arsenic (GaAs) have a large forbidden band width, so they cannot be used as they are for long wavelength light reception such as in optical communications. Therefore,
For example, Japanese Patent Laid-Open No. 1-140679 discloses a technique of doping a light absorption layer of an indium phosphide (InP) photodiode with a vertical PLN structure with a rare earth element such as erbium (E''). , Er have absorption efficiency for infrared light, so long wavelength light can be received.
一方、ＭＳＭ構造の横型ホトダイオードも知られており
、長波長の光受信を可能にする技術として、例えば特開
昭６４−８９３７６号が提案されている。このホトダイ
オードでは、長波長の光受信を行なうために、光吸収層
として禁制帯幅の小さいインジウム・ガリウム・砒素（
Ｉｎ Ｇａ Ａｓ ）か用いられ、暗電流を低減させる
ためにアルミニウム・インジウム・砒素（ＡρエロＡｓ
）のバッファ層か設けられている。そして、このバッフ
ァ層上にショットキ電極か設けられている。On the other hand, a horizontal photodiode having an MSM structure is also known, and Japanese Patent Application Laid-open No. 89376/1983 has proposed a technique for enabling long wavelength light reception. In order to receive long-wavelength light, this photodiode uses indium, gallium, and arsenic (indium, gallium, and arsenic), which have a small forbidden band width, as the light absorption layer.
InGaAs) is used, and aluminum-indium-arsenic (AρEroAs) is used to reduce dark current.
) buffer layer is provided. A Schottky electrode is provided on this buffer layer.
しかし、前者のホトダイオードは、縦型構造であるため
にＦＥＴ（電界効果トランジスタ）等との集積化に適さ
す、製造工程も複雑化する。また、後者のホトダイオー
ドは、Ｉｎ Ｇａ Ａｓのような禁制帯幅の小さい半導
体層の形成か必要になるため、ＦＥＴ等との集積化に適
さない。また、暗電流を低減する工夫も必要になり、実
用化に適さない。However, since the former photodiode has a vertical structure, it is suitable for integration with FETs (field effect transistors) and the like, but the manufacturing process is also complicated. Furthermore, the latter photodiode requires the formation of a semiconductor layer such as InGaAs with a small forbidden band width, and is therefore not suitable for integration with FETs or the like. Furthermore, it requires a method to reduce dark current, making it unsuitable for practical use.
本発明は、かかる従来技術の欠点を克服することを課題
とする。The present invention aims to overcome these drawbacks of the prior art.
本発明は、半絶縁性基板上に光吸収層が形成され、当該
光吸収層側から入射した光によるキャリアを当該光吸収
層側に設けた少なくとも一対の信号取出電極を介して出
力する半導体受光素子において、光吸収層は禁制帯幅か
０．８ｅＶ以上の半導体材料からなり、希土類元素がド
ープされていることを特徴とする。The present invention provides a semiconductor light receiving device in which a light absorption layer is formed on a semi-insulating substrate, and carriers caused by light incident from the light absorption layer side are outputted through at least a pair of signal extraction electrodes provided on the light absorption layer side. In the device, the light absorption layer is made of a semiconductor material with a forbidden band width of 0.8 eV or more, and is characterized in that it is doped with a rare earth element.
本発明によれば、基板の表面構造として受光素子か構成
され、光吸収層には希土類元素かトープされるので、光
吸収層は禁制帯幅の大きな半導体材料で構成できる。According to the present invention, a light-receiving element is formed as the surface structure of the substrate, and the light-absorbing layer is doped with a rare earth element, so that the light-absorbing layer can be formed of a semiconductor material with a large forbidden band width.
以下、添付図面を参照して本発明の詳細な説明する。 Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
第１図は実施例に係る半導体受光素子の断面図であり、
同図（ａ）は受光部をメサ構造としたもの、同図（ｂ）
は受光部を埋込み構造としたものである。同図（ａ）に
図示の通り、半絶縁性半導体基板として、例えばＧａ
Ａｓ基板１の上面には、光吸収層としてのＧａ Ａｓ層
２がエピタキシャル成長され、その上面には信号出力用
の電極３Ａ、３Ｂか設けられている。ここで、Ｇａ Ａ
ｓ層２は希土類元素の一例としてＥｒを含み、これが長
波長の信号光に対して感度を有している。また、電極３
Ａ、３ＢはＧａ Ａｓ層２に対して、オーミック接触も
しくはショットキ接触している。FIG. 1 is a cross-sectional view of a semiconductor light-receiving element according to an example,
The same figure (a) shows the light receiving part with a mesa structure, the same figure (b)
In this example, the light receiving part is embedded. As shown in Figure (a), the semi-insulating semiconductor substrate is made of, for example, Ga
A GaAs layer 2 as a light absorption layer is epitaxially grown on the upper surface of the As substrate 1, and electrodes 3A and 3B for signal output are provided on the upper surface. Here, Ga A
The s-layer 2 contains Er as an example of a rare earth element, and is sensitive to long wavelength signal light. In addition, electrode 3
A and 3B are in ohmic contact or Schottky contact with the GaAs layer 2.
第１図（ａ）のメサ構造は、基板１の全面にＧａ Ａｓ
層２をエピタキシャル成長させた後、受光部以外のエピ
タキシャル層をエツチングで除去して形成できる。また
、同図（ｂ）の埋込み構造は、基板１にエツチングで溝
部を形成し、この溝部にＧａ Ａｓ層２を選択成長して
形成できる。この埋込構造によれば、素子の表面を平坦
にできる。The mesa structure shown in FIG. 1(a) has GaAs on the entire surface of the substrate 1.
After the layer 2 is epitaxially grown, the epitaxial layer other than the light-receiving portion can be removed by etching. The buried structure shown in FIG. 2B can be formed by etching a groove in the substrate 1 and selectively growing the GaAs layer 2 in the groove. According to this buried structure, the surface of the element can be made flat.
上記の半導体受光素子によれば、信号光として赤外光が
入射されると、Ｇａ Ａｓ層２にドープされたＥｒによ
りキャリアが発生する。ここで、Ｇａ Ａｓは禁制帯幅
か大きいので、ＧａＡｓ基板１てキャリアが生成するこ
とはない。Ｇａ Ａｓ層２で生成したキャリアは、電極
３Ａと３Ｂの間のバイアス電圧による電界で移動し、電
極３Ａと３Ｂから外部に取り出される。なお、Ｇａ Ａ
ｓは禁制帯幅が大きいので、暗電流を低く抑えることか
できる。According to the semiconductor light-receiving device described above, when infrared light is incident as signal light, carriers are generated by Er doped in the GaAs layer 2. Here, since GaAs has a large forbidden band width, carriers are not generated in the GaAs substrate 1. The carriers generated in the GaAs layer 2 are moved by the electric field caused by the bias voltage between the electrodes 3A and 3B, and are taken out from the electrodes 3A and 3B. In addition, Ga A
Since s has a large forbidden band width, dark current can be kept low.
本発明については、種々の変形が可能である。Various modifications are possible to the present invention.
例えば、光吸収層はＧａ Ａｓに限定されず、禁制帯幅
か０．８ｅＶ以上のものであれば、各種のものを用い得
る。また、ドーピングされるのはＥｒに限らす、ツリウ
ム（Ｔｍ ）等であってもよい。ドーパントを変えるこ
とにより、感度のある光の波長を変えることかできる。For example, the light absorption layer is not limited to GaAs, and various materials can be used as long as the forbidden band width is 0.8 eV or more. Further, the material to be doped is not limited to Er, but may also be thulium (Tm) or the like. By changing the dopant, the wavelength of light to which it is sensitive can be changed.
また、基板はウェーハ上に純粋なＧａ Ａｓをエピタキ
シャル成長させたものであってもよく、この場合にはＥ
ｒ等をドープしたＧａ Ａｓ層２がＧａ Ａｓエピタキ
シャル成長層の上に形成される。Further, the substrate may be made by epitaxially growing pure GaAs on a wafer, in which case E
A GaAs layer 2 doped with r etc. is formed on the GaAs epitaxial growth layer.
電極３Ａと、３Ｂをオーミック電極としたときと、ショ
ットキ電極としたときでは、吸収波長が異なるためスペ
クトルの異なる信号光に感度をもつ。ここで、Ｇａ Ａ
ｓはショットキ障壁が一般に高くなるので、暗電流を極
めて小さくできる。When the electrodes 3A and 3B are used as ohmic electrodes and when they are used as Schottky electrodes, the absorption wavelengths are different, so that they are sensitive to signal light having different spectra. Here, Ga A
Since the Schottky barrier of s generally becomes high, the dark current can be made extremely small.
本発明の半導体受光素子は半導体チップの表面構造とし
て形成されるため、他の素子との集積化に適している。Since the semiconductor light receiving element of the present invention is formed as a surface structure of a semiconductor chip, it is suitable for integration with other elements.
また、長波長の光によってＧａＡｓ自体からはキャリア
か生じないので、光アイソレーションやシールドの工夫
を特に施す必要かない。Further, since carriers are not generated from GaAs itself due to long wavelength light, there is no need to take special measures for optical isolation or shielding.
以上、詳細に説明した通り、本発明の半導体受光素子に
よれば、基板の表面構造として受光素子か構成され、光
吸収層には希土類元素がドープされるので、光吸収層は
禁制帯幅が０．８ｅＶ以上の半導体材料で構成できる。As explained above in detail, according to the semiconductor light receiving device of the present invention, the light receiving device is formed as the surface structure of the substrate, and the light absorption layer is doped with a rare earth element, so the light absorption layer has a forbidden band width. It can be made of a semiconductor material with a voltage of 0.8 eV or more.
このため、暗電流の低減か可能になるたけてなく、ＦＥ
Ｔ等の集積化も容易になる。For this reason, it is possible to reduce the dark current, and the FE
Integration of T etc. becomes easy.
第１図は本発明の実施例に係る半導体受光素子の断面図
である。
１−・−ＧａＡｓ基板、２−＝ＧａＡｓ層、３Ａ、Ｂ・
・・電極。
代理人弁理士 長谷用 芳 樹実施イ列の構跋
第り図FIG. 1 is a sectional view of a semiconductor light receiving element according to an embodiment of the present invention. 1-.-GaAs substrate, 2-=GaAs layer, 3A, B.
··electrode. Representative Patent Attorney Yoshiki Hase A detailed diagram of the implementation sequence
Claims (1)
層側から入射した光によるキャリアを当該光吸収層側に
設けた少なくとも一対の信号取出電極を介して出力する
半導体受光素子において、前記光吸収層は禁制帯幅が０
．８ｅＶ以上の半導体材料からなり、希土類元素がドー
プされていることを特徴とする半導体受光素子。 ２、前記信号取出電極は、前記光吸収層にオーミック接
触またはショットキ接触している請求項１記載の半導体
受光素子。[Claims] 1. A light absorption layer is formed on a semi-insulating substrate, and carriers caused by light incident from the light absorption layer side are transmitted through at least one pair of signal extraction electrodes provided on the light absorption layer side. In the output semiconductor light-receiving device, the light absorption layer has a forbidden band width of 0.
．． A semiconductor light-receiving element characterized in that it is made of a semiconductor material with a voltage of 8 eV or more and is doped with a rare earth element. 2. The semiconductor light receiving element according to claim 1, wherein the signal extraction electrode is in ohmic contact or Schottky contact with the light absorption layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2280633A JPH04155872A (en) | 1990-10-19 | 1990-10-19 | Semiconductor photodetective element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2280633A JPH04155872A (en) | 1990-10-19 | 1990-10-19 | Semiconductor photodetective element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04155872A true JPH04155872A (en) | 1992-05-28 |
Family
ID=17627775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2280633A Pending JPH04155872A (en) | 1990-10-19 | 1990-10-19 | Semiconductor photodetective element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04155872A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017126738A (en) * | 2016-01-13 | 2017-07-20 | ソニー株式会社 | Light receiving device, method of manufacturing the same, imaging device, and electronic device |
-
1990
- 1990-10-19 JP JP2280633A patent/JPH04155872A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017126738A (en) * | 2016-01-13 | 2017-07-20 | ソニー株式会社 | Light receiving device, method of manufacturing the same, imaging device, and electronic device |
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