CN109412412A - Belt switch reverse-connection preventing circuit - Google Patents
Belt switch reverse-connection preventing circuit Download PDFInfo
- Publication number
- CN109412412A CN109412412A CN201811530658.8A CN201811530658A CN109412412A CN 109412412 A CN109412412 A CN 109412412A CN 201811530658 A CN201811530658 A CN 201811530658A CN 109412412 A CN109412412 A CN 109412412A
- Authority
- CN
- China
- Prior art keywords
- oxide
- semiconductor
- metal
- connection preventing
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
- H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
Abstract
The invention discloses a kind of belt switch reverse-connection preventing circuits, comprising: the first metal-oxide-semiconductor and the second metal-oxide-semiconductor；Wherein, power supply is connected to the drain of first metal-oxide-semiconductor, and the grid of first metal-oxide-semiconductor passes through switch ground connection；Power supply is connected to the drain of second metal-oxide-semiconductor, and the grid of second metal-oxide-semiconductor is connected to the grid of first metal-oxide-semiconductor.The belt switch reverse-connection preventing circuit is not only able to achieve switch and anti-reverse defencive function, but also can guarantee power loss minimum.
Description
Technical field
The present invention relates to belt switch reverse-connection preventing circuits.
Background technique
With the fast development of technology, market puts forward higher requirements the micromation of circuit, power consumption and use reliability,
Especially military industry, circuit had not only needed simply, but also needed to meet functional requirement, and circuit hardware design has welcome bigger choose
War.
Product not only needs the externally input D.C. regulated power supply of independent control, but also when the reversal connection of the positive and negative anodes of power supply,
It will not lead to damage of product because of the backward voltage of product.
Summary of the invention
The object of the present invention is to provide a kind of belt switch reverse-connection preventing circuit, which is both able to achieve out
Pass and anti-reverse defencive function, and can guarantee power loss minimum.
To achieve the goals above, the present invention provides a kind of belt switch reverse-connection preventing circuit, the belt switch reverse-connection preventing circuits
It include: the first metal-oxide-semiconductor and the second metal-oxide-semiconductor；Wherein, power supply is connected to the drain of first metal-oxide-semiconductor, and first metal-oxide-semiconductor
Grid by switch ground connection；Power supply is connected to the drain of second metal-oxide-semiconductor, and the grid of second metal-oxide-semiconductor is connected to
The grid of first metal-oxide-semiconductor.
Preferably, the source electrode of first metal-oxide-semiconductor is connected with the source electrode of second metal-oxide-semiconductor.
Preferably, the source electrode of first metal-oxide-semiconductor is connected to first metal-oxide-semiconductor by capacitor and resistance in parallel
Grid.
Preferably, the source electrode of second metal-oxide-semiconductor is connected to second metal-oxide-semiconductor by capacitor and resistance in parallel
Grid.
Preferably, first metal-oxide-semiconductor and second metal-oxide-semiconductor are high-voltage power type metal-oxide-semiconductor.
Preferably, the VGS of second metal-oxide-semiconductor is set as -10V.
According to the above technical scheme, the solution of the present invention include three functions, i.e., power switch control, reverse-connection preventing circuit and
Low-loss.The power switch controls the switch for being input to product for controlling external power supply.The reverse-connection preventing circuit is used
Subsequent conditioning circuit is protected when power positive cathode is reversed.The low-power consumption is for reducing product power consumption.
Other features and advantages of the present invention will the following detailed description will be given in the detailed implementation section.
Detailed description of the invention
The drawings are intended to provide a further understanding of the invention, and constitutes part of specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings:
Fig. 1 is the circuit diagram for illustrating a kind of belt switch reverse-connection preventing circuit of the invention.
Specific embodiment
Below in conjunction with attached drawing, detailed description of the preferred embodiments.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
A kind of belt switch reverse-connection preventing circuit of the present invention, which includes: the first metal-oxide-semiconductor and the 2nd MOS
Pipe；Wherein, power supply is connected to the drain of first metal-oxide-semiconductor, and the grid of first metal-oxide-semiconductor passes through switch ground connection；Power supply
It is connected to the drain of second metal-oxide-semiconductor, and the grid of second metal-oxide-semiconductor is connected to the grid of first metal-oxide-semiconductor.
Power input switch control can effectively be controlled.Counnter attack connection function may be implemented.Extremely low power may be implemented
Loss.Facilitate realization microminiaturized circuitry.
In a kind of specific embodiment of the invention, the source electrode of the source electrode of first metal-oxide-semiconductor and second metal-oxide-semiconductor
It is connected.
In a kind of specific embodiment of the invention, the source electrode of first metal-oxide-semiconductor by capacitor in parallel and
Resistance is connected to the grid of first metal-oxide-semiconductor.
In a kind of specific embodiment of the invention, the source electrode of second metal-oxide-semiconductor by capacitor in parallel and
Resistance is connected to the grid of second metal-oxide-semiconductor.
In a kind of specific embodiment of the invention, first metal-oxide-semiconductor and second metal-oxide-semiconductor are high-voltage power type
Metal-oxide-semiconductor.
In a kind of specific embodiment of the invention, the VGS of second metal-oxide-semiconductor is set as -10V.
Design principle of the invention:
(1) both ends switched are not serially connected in directly on 28V power supply line and realize switching function, be serially connected in metal-oxide-semiconductor grid it
Between, the electric current for flowing through switch ends in this way is very small, reduces requirement to the selection of switch.
(2) the P-channel metal-oxide-semiconductor of Q1 plays the role of anti-reverse, as switch closed condition ,+28V and GND reversed, Q1's
Metal-oxide-semiconductor is in close state, and circuit does not have circuit, and subsequent conditioning circuit cannot work, play a protective role.
(3) there is body diode inside the MOS of Q1, so the switch of the metal-oxide-semiconductor is unable to control, therefore introduce the P-channel of Q2
Metal-oxide-semiconductor, the metal-oxide-semiconductor can be connected after VGS reaches cut-in voltage, and switching function may be implemented.
2, parameter is chosen:
(1) MOS of P-channel can select SO-8FL to encapsulate (size is only 5mm × 6mm), low on-resistance (VGS=-
The Europe 7.7m when 10V) high-voltage power type metal-oxide-semiconductor, recommend ON Semiconductor company NVMFS5A160PLZT1G model
Metal-oxide-semiconductor.
(2) to guarantee that two metal-oxide-semiconductors can be fully on, VGS is arranged in -10V or so, and is powered on to hold at switch and does slow open
Function is opened, metal-oxide-semiconductor is protected.
(3) loss calculation
Power source loads are calculated according to 1A, Q1, Q2 electric current 2A or so, are amounted to loss about 0.028W, are lost minimum.
If being concatenated using diode and realizing reversal connection, diode drop is calculated according to minimum 0.3V, the loss on diode
Just reach 0.6W.
Therefore, the design relatively saves power consumption and simple easily realization.
It is described the prefered embodiments of the present invention in detail above in conjunction with attached drawing, still, the present invention is not limited to above-mentioned realities
The detail in mode is applied, within the scope of the technical concept of the present invention, a variety of letters can be carried out to technical solution of the present invention
Monotropic type, these simple variants all belong to the scope of protection of the present invention.
It is further to note that specific technical features described in the above specific embodiments, in not lance
In the case where shield, can be combined in any appropriate way, in order to avoid unnecessary repetition, the present invention to it is various can
No further explanation will be given for the combination of energy.
In addition, various embodiments of the present invention can be combined randomly, as long as it is without prejudice to originally
The thought of invention, it should also be regarded as the disclosure of the present invention.
Claims (6)
1. a kind of belt switch reverse-connection preventing circuit, which is characterized in that the belt switch reverse-connection preventing circuit includes: the first metal-oxide-semiconductor and second
Metal-oxide-semiconductor；Wherein, power supply is connected to the drain of first metal-oxide-semiconductor, and the grid of first metal-oxide-semiconductor passes through switch ground connection；Electricity
Source is connected to the drain of second metal-oxide-semiconductor, and the grid of second metal-oxide-semiconductor is connected to the grid of first metal-oxide-semiconductor.
2. belt switch reverse-connection preventing circuit according to claim 1, which is characterized in that it is characterized in that, first metal-oxide-semiconductor
Source electrode be connected with the source electrode of second metal-oxide-semiconductor.
3. belt switch reverse-connection preventing circuit according to claim 1, which is characterized in that it is characterized in that, described first
The source electrode of metal-oxide-semiconductor is connected to the grid of first metal-oxide-semiconductor by capacitor and resistance in parallel.
4. belt switch reverse-connection preventing circuit according to claim 1, which is characterized in that it is characterized in that, described second
The source electrode of metal-oxide-semiconductor is connected to the grid of second metal-oxide-semiconductor by capacitor and resistance in parallel.
5. belt switch reverse-connection preventing circuit according to claim 1, which is characterized in that it is characterized in that, first metal-oxide-semiconductor
It is high-voltage power type metal-oxide-semiconductor with second metal-oxide-semiconductor.
6. belt switch reverse-connection preventing circuit according to claim 1, which is characterized in that it is characterized in that, second metal-oxide-semiconductor
VGS be set as -10V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811530658.8A CN109412412A (en) | 2018-12-14 | 2018-12-14 | Belt switch reverse-connection preventing circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811530658.8A CN109412412A (en) | 2018-12-14 | 2018-12-14 | Belt switch reverse-connection preventing circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109412412A true CN109412412A (en) | 2019-03-01 |
Family
ID=65459280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811530658.8A Pending CN109412412A (en) | 2018-12-14 | 2018-12-14 | Belt switch reverse-connection preventing circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109412412A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021097898A1 (en) * | 2019-11-20 | 2021-05-27 | 刘翠萍 | High-current switch circuit having reverse connection prevention function |
| CN114336568A (en) * | 2022-01-12 | 2022-04-12 | 南京英锐创电子科技有限公司 | Power supply reverse connection protection circuit and device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203313144U (en) * | 2013-01-23 | 2013-11-27 | 海能达通信股份有限公司 | Backflow prevention circuit |
| CN105703614A (en) * | 2015-12-30 | 2016-06-22 | 深圳市国耀电子科技股份有限公司 | Anti-reverse-connection and anti-backward-flow protective circuit |
| CN205693937U (en) * | 2016-06-14 | 2016-11-16 | 安徽师范大学 | A kind of LED drive power is with anti-reverse and soft starting circuit |
| CN206041485U (en) * | 2016-09-22 | 2017-03-22 | 东莞市港奇电子有限公司 | Electrical safety protection circuit of battery |
| CN207459700U (en) * | 2017-12-08 | 2018-06-05 | 上海奉天电子股份有限公司 | Overvoltage protection and anti-reverse vehicle electronic circuit module based on zero quiescent dissipation |
-
2018
- 2018-12-14 CN CN201811530658.8A patent/CN109412412A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203313144U (en) * | 2013-01-23 | 2013-11-27 | 海能达通信股份有限公司 | Backflow prevention circuit |
| CN105703614A (en) * | 2015-12-30 | 2016-06-22 | 深圳市国耀电子科技股份有限公司 | Anti-reverse-connection and anti-backward-flow protective circuit |
| CN205693937U (en) * | 2016-06-14 | 2016-11-16 | 安徽师范大学 | A kind of LED drive power is with anti-reverse and soft starting circuit |
| CN206041485U (en) * | 2016-09-22 | 2017-03-22 | 东莞市港奇电子有限公司 | Electrical safety protection circuit of battery |
| CN207459700U (en) * | 2017-12-08 | 2018-06-05 | 上海奉天电子股份有限公司 | Overvoltage protection and anti-reverse vehicle electronic circuit module based on zero quiescent dissipation |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021097898A1 (en) * | 2019-11-20 | 2021-05-27 | 刘翠萍 | High-current switch circuit having reverse connection prevention function |
| CN114336568A (en) * | 2022-01-12 | 2022-04-12 | 南京英锐创电子科技有限公司 | Power supply reverse connection protection circuit and device |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190301 |
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| RJ01 | Rejection of invention patent application after publication |