CN109412394A - Inhibit the open loop active voltage driving circuit and method of IGBT and MOSFET electromagnetic interference - Google Patents
Inhibit the open loop active voltage driving circuit and method of IGBT and MOSFET electromagnetic interference Download PDFInfo
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- CN109412394A CN109412394A CN201811295752.XA CN201811295752A CN109412394A CN 109412394 A CN109412394 A CN 109412394A CN 201811295752 A CN201811295752 A CN 201811295752A CN 109412394 A CN109412394 A CN 109412394A
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
Abstract
The present invention relates to a kind of driving circuits applied to power switch tube IGBT and MOSFET, more particularly to inhibit the open loop active voltage driving circuit and method of IGBT and MOSFET electromagnetic interference, pass through continuous discrete adjustment gate electrode resistance resistance value size, by switching transients voltage waveform by the collection emitter voltage waveform of original single slope, it is adjusted to the Gauss S type voltage waveform for having more preferable inhibiting effect to electromagnetic interference；And, since the present invention mainly carries out the adjusting of switching process voltage waveform, so it is above-mentioned voltage decline stage and voltage ascent stage that the movement segment of control is most important, active voltage driving circuit continuous discrete adjustment of dynamic in switch tube voltage decline and voltage uphill process exports gate resistance.The final present invention can select optimal gate electrode resistance to drive in each stage, influence the smallest effect to reach electromagnetic interference, voltage overshoot etc..
Description
Technical field
The invention mainly relates to a kind of driving circuits applied to power switch tube IGBT and MOSFET, more particularly, to suppression
The open loop active voltage driving circuit and method of IGBT and MOSFET electromagnetic interference processed.
Background technique
With the fast development of power electronic technique, handed over using IGBT and MOSFET as the power converter of core in track
The industrial circles such as logical, aerospace, industry transmission and power transmission are widely used.However, with small in size, again
Light, high efficiency, the development trend of high reliability are measured, the inside electromagnetic environment of these high-power, high switching frequency equipment is also more next
It is more complicated.Also, high voltage/current changing rate of the instantaneous variation generated during IGBT and MOSFET fast switching transients
(dv/dt and di/dt) is the main source of high frequency E MI.It causes switching voltage and current waveform to contain abundant higher hamonic wave, leads to
Power supply line, ground wire etc. is crossed to blaze abroad.It not only will affect the normal work of current transformer itself, it also can be to periphery electronic equipment just
Often work generates electromagnetic interference problem.Currently, the method for inhibiting electromagnetic interference most basic has shielding, ground connection and the cloth for optimizing PCB
Line.In conjunction with the characteristics of switch converters, more commonly used technology has: electromagnetic interface filter designing technique, soft switch technique and application are slow
Rush circuit etc..Wave filter technology is as current one of the important method for inhibiting electromagnetic interference, after can inhibiting to us
Extra energy is decayed.Because EMI signal can greatly be decayed except the passband of EMI, so that equipment be made to meet
Related EMC Standard.But the installation question that filter must be paid attention in application, if filter is mounted so as to not conform to
It is suitable to obtain a worse effect instead.Since electromagnetic interference source is the first element of electromagnetic interference problem, in order to better
It realizes electromagnetic compatibility (Electromagnetic Compatibility, EMC), needs in the generation for inhibiting EMI from source.
Summary of the invention
In view of the above problems, the present invention is intended to provide a kind of discrete type open loop in the generation for inhibiting EMI from source has
Source Voltag driving circuit and control method.
In order to solve the above technical problems, one technical scheme adopted by the invention is that: provide a kind of inhibition IGBT and
The open loop active voltage driving circuit of MOSFET electromagnetic interference, applied in the driving circuit of power switch tube, the voltage is driven
Dynamic circuit includes drive module and gate electrode resistance；The gate electrode resistance is variable resistance, and described gate electrode resistance one end connects power
The gate pole of switching tube, the other end connect the emitter of power switch tube；The drive module is connect with the gate electrode resistance, to
The continuous discrete change gate resistance of dynamic.
Further, the drive module includes the memory being made of driver, output stage and control unit.
As an improvement the memory, to save gate-drive sequence and logic；
Described control unit is triggered by pwm signal, and the gate pole in memory is called to drive in power switch tube transient process
Dynamic sequence and logic are to control driving signal output state；
The output stage, to according to the continuous discrete output drive signal of described control unit output state dynamic, institute
It states gate electrode resistance and resistance value is changed according to driving signal.
Further, the output stage is made of two parallel drivers, respectively master driver and auxiliary actuator,
The auxiliary actuator has smaller temporal resolution.
A kind of open loop active voltage driving circuit method inhibiting IGBT and MOSFET electromagnetic interference, referred to controlling party
Method, transient process is opened according to power switch tube the following steps are included:
S1, delayed phase is opened, the driving circuit exports the gate electrode resistance of small resistance value；
S2, electric current ascent stage, the driving circuit export the gate electrode resistance of big resistance value；
S3, voltage decline stage, the continuous discrete tune of driving circuit dynamic during power switch tube voltage declines
Save output resistance；By the collection emitter voltage waveform of original single slope, it is adjusted to have more preferable inhibiting effect to electromagnetic interference
Gauss S type voltage waveform；
S4, the stage is all turned on, the driving circuit exports the gate electrode resistance of small resistance value.
Further, the step S3 method of adjustment are as follows: carry out virtual voltage decline curve slope and the S type slope of curve
Compare, if the absolute value of its slope is less than S type curve, selects lesser output gate resistance；On the contrary, if its slope
Absolute value is greater than S type curve, then selects biggish output gate resistance.
A method of inhibiting the open loop active voltage driving circuit of IGBT and MOSFET electromagnetic interference, referred to controlling party
Method, according to power switch tube turn off transient process the following steps are included:
S1, turn-off delay stage, the driving circuit export the gate electrode resistance of small resistance value；
S2, voltage ascent stage, the continuous discrete tune of driving circuit dynamic during power switch tube voltage declines
Save output resistance；By the collection emitter voltage waveform of original single slope, it is adjusted to have more preferable inhibiting effect to electromagnetic interference
Gauss S type voltage waveform；
S3, electric current decline stage, the driving circuit export the gate electrode resistance of big resistance value；
S4, all off stage, the driving circuit export the gate electrode resistance of small resistance value.
Further, the step S2 method of adjustment are as follows: carry out virtual voltage decline curve slope and the S type slope of curve
Compare, if the absolute value of its slope is less than S type curve, selects lesser output gate resistance；On the contrary, if its slope
Absolute value is greater than S type curve, then selects biggish output gate resistance.
The present invention inhibit IGBT and MOSFET electromagnetic interference open loop active voltage driving circuit and method, by continuously from
It dissipates and adjusts gate electrode resistance resistance value size, realize switching transients voltage waveform close to Gauss S curve shape, to intervene the production of EMI
Source of students, it is thus possible to select optimal gate electrode resistance to drive in each stage, to reach the influence such as electromagnetic interference, voltage overshoot
The smallest effect.
Detailed description of the invention
Fig. 1 is the IGBT chopper circuit schematic diagram containing active gate drive circuit；
Fig. 2 is IGBT transient process waveform；
Fig. 3 is driving circuit output gate electrode resistance schematic diagram.
Label meaning shown in Fig. 1: R, L: load；FWB: freewheeling diode；LD: continuous current circuit stray inductance；LS: circuit
Middle stray inductance；LE: mitter stray inductance；Rg: gate electrode resistance；Cgc: gate pole and inter-collector parasitic capacitance；Cge: gate pole
With transmitting interpolar parasitic capacitance；Cce: parasitic capacitance between collector and emitter.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A kind of embodiment of the invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without making creative work, belongs to protection scope of the present invention.
In the description of the present invention it should be noted that term " first ", " second " etc. are used for description purposes only, and cannot
It is interpreted as indication or suggestion relative importance.It should be noted that be unless specifically defined or limited otherwise, term " connection " is answered
It is interpreted broadly, for example, it may be being fixedly connected may be a detachable connection, or is integrally connected；It can be mechanical connection,
It is also possible to be electrically connected；It can be directly connected.It can also be indirectly connected by middle intermediary.For the common skill of this field
For art personnel, visual concrete condition understands the concrete meaning of above-mentioned term in the present invention.
The embodiment of the present invention provides a kind of open loop active voltage driving circuit for inhibiting IGBT and MOSFET electromagnetic interference, answers
For in the driving circuit of power switch tube, the Voltag driving circuit to include drive module and gate electrode resistance；The gate pole electricity
Resistance is variable resistance, and the gate pole of gate electrode resistance one end connection power switch tube, the other end connects the transmitting of power switch tube
Pole；The drive module is connect with the gate electrode resistance, to the continuous discrete change gate resistance of dynamic.
As a kind of preferred embodiment, the drive module includes the memory being made of driver, output stage and control
Unit, wherein
The memory, to save gate-drive sequence and logic；
Described control unit is triggered by pwm signal, and the gate pole in memory is called to drive in power switch tube transient process
Dynamic sequence and logic are to control driving signal output state；
The output stage, to according to the continuous discrete output drive signal of described control unit output state dynamic, institute
It states gate electrode resistance and resistance value is changed according to driving signal.As a kind of preferred embodiment, the output stage is by two parallel drivers
Composition, respectively master driver and auxiliary actuator, the auxiliary actuator have smaller temporal resolution.
Due to the switching process of IGBT be by IGBT MOSFET part determines, so the switching process of MOSFET and
IGBT is essentially identical, below by taking IGBT as an example, introduces their dynamic characteristic, while changing with switch tube voltage in dynamic characteristic
Rate and the relationship of gate electrode resistance are according to explanation a specific embodiment of the invention.
Opening process research
As shown in Fig. 2, being the gate voltage in typical IGBT switching process, collector current sum aggregate emitter voltage waveform.
The opening process of IGBT can be divided into four-stage.
1st stage: delay (t0-t1) is opened
T0 starts, and when gate drive voltage rises to Ugh from Ugl, gate current starts the input capacitance Cies to IGBT
(Cies=Cgc+Cge) it charges.Gate voltage Ugs is gradually increasing, but still less than Uth, IGBT is open-minded not yet.
Prolong as shown in figure 3, the stage driving circuit exports a lesser gate electrode resistance of resistance value and opens shortening switching tube
The slow time.
2nd stage: electric current rises (t1-t2)
Work as UgsReach UthWhen, collector current is begun to ramp up.ILBy through FWB afterflow, being gradually transferred to IGBT originally.But by
It is still not turned off in FWB, collection emitter-base bandgap grading still subjects voltage UDC.
At this moment collector current can indicate are as follows:
Id=gm(Uge+Utk)
Wherein gm is mutual conductance, for characterizing UgeTo IcControl action and amplifying power.By being obtained to both sides immediate derivation
T out1-t2Between collector current rise change rate di/dt are as follows:
In formula: IpFor leakage current, L is load inductance.
As it can be seen that collector current change rate can be reduced by increasing gate resistance.As shown in figure 3, the stage driving circuit
Export the biggish gate electrode resistance of resistance value.
3rd stage: voltage declines (t2-t3)
t2When FWB electric current fall to 0 and turn off naturally, device initially enters active area and quickly to the transition of Ohmic resistance area,
U simultaneouslyceRapid decrease.Due to miller capacitance CgcSudden discharge extracts whole ig, UGSHardly rise from existing Miller platform.
The stage dropped under voltage collects emitter voltage UceIt can indicate are as follows:
As can be seen from the above equation: the absolute value for collecting emitter voltage change rate in IGBT opening process is gate electrode resistance RgSubtract
Function, RgIt is bigger, UceChange rate absolute value with regard to smaller, that is, change slower.
The stage is the critical stage that the present invention controls, and operating principle is as shown in Figure 3.Active voltage driving circuit is switching
The continuous discrete adjustment output resistance of dynamic during tube voltage decline.By the collection emitter voltage waveform of original single slope, adjust
Whole is the Gauss S type voltage waveform for having more preferable inhibiting effect to electromagnetic interference.Working mechanism are as follows: virtual voltage decline curve is oblique
Rate is compared with the S type slope of curve, if the absolute value of its slope is less than S type curve, selects lesser output gate pole electricity
Resistance value；On the contrary, selecting biggish output gate resistance if the absolute value of its slope is greater than S type curve.
4th stage: (t is all turned on3-t4)
For the conduction loss for reducing switch, CgeIt needs to continue to charge, UgeRise to Ugh。
As shown in figure 3, the stage exports a lesser gate electrode resistance to keep IGBT rapidly completely open-minded, reduce open-minded
Time and turn-on consumption.
Specifically, according to the above results, the embodiment of the present invention provides a kind of discrete type open loop active voltage driving electricity
Road control method, transient process is opened according to power switch tube the following steps are included:
S1, delayed phase is opened, the driving circuit exports the gate electrode resistance of small resistance value；
S2, electric current ascent stage, the driving circuit export the gate electrode resistance of big resistance value；
S3, voltage decline stage, the continuous discrete tune of driving circuit dynamic during power switch tube voltage declines
Save output resistance；By the collection emitter voltage waveform of original single slope, it is adjusted to have more preferable inhibiting effect to electromagnetic interference
Gauss S type voltage waveform；As a kind of preferred embodiment of the present invention, the step S3 method of adjustment are as follows: decline virtual voltage
The slope of curve is compared with the S type slope of curve, if the absolute value of its slope is less than S type curve, selects lesser output
Gate resistance；On the contrary, selecting biggish output gate resistance if the absolute value of its slope is greater than S type curve.
S4, the stage is all turned on, the driving circuit exports the gate electrode resistance of small resistance value.
Due to the switching process of IGBT be by IGBT MOSFET part determines, so the switching process of MOSFET and
IGBT is essentially identical, below by taking IGBT as an example, introduces their dynamic characteristic, while changing with switch tube voltage in dynamic characteristic
Rate and the relationship of gate electrode resistance are according to explanation a specific embodiment of the invention.
Turn off process research
As shown in Fig. 2, the turn off process of IGBT is equally divided into four-stage.
5th stage: turn-off delay (t5-t6)
t5Start, gate drive voltage is from UghJump to Ugl, parasitic capacitance CgcAnd CgeStart to discharge, gate voltage UgeIt opens
Begin to decline.
As shown in figure 3, the stage driving circuit exports a lesser gate electrode resistance to open speed with accelerating IGBT.
6th stage: voltage rises (t6-t7)
From t6Moment starts quickly to collect emitter voltage U to cut-off region transitionceIt begins to ramp up, because of Miller capacitance CgcElectric discharge is taken out
Take whole ig, gate voltage UgeIt hardly drops, Miller platform occurs.
Consider to find out collection emitter voltage change rate using the method similar with opening process are as follows:
As can be seen from the above equation: it is identical as opening process, the absolute value of emitter voltage change rate is collected in IGBT turn off process
It is gate electrode resistance RgSubtraction function, RgIt is bigger, UceChange rate absolute value with regard to smaller, that is, change slower.
The stage is similarly the critical stage that the present invention controls, and operating principle is as shown in Figure 3.Active voltage driving circuit exists
The continuous discrete adjustment output resistance of dynamic in switch tube voltage uphill process.By the collection emitter voltage wave of original single slope
Shape, is adjusted to Gauss S type voltage waveform, and working mechanism is identical as voltage ascent stage.
7th stage: electric current declines (t7-t8)
t7When UceSlightly larger than UDC, FWB conducting ILFWB afterflow, I are gradually transferred to by IGBTcBy being gradually reduced to 0, during which door
Pole is released charge via driving source, UgeWith IcReduce and declines.
The change rate of collector current are as follows:
Become as shown in figure 3, the stage driving circuit exports a biggish gate electrode resistance of resistance value to reduce collector current
Rate.
8th stage: all off (t8-t9)
UgeContinue to drop to Ugl。
The stage circuit exports a lesser gate electrode resistance of resistance value to shorten the turn-off time.
Specifically, according to the above results, the embodiment of the present invention provides a kind of inhibition IGBT and MOSFET electromagnetic interference
Open loop active voltage driving circuit method, referred to control method, according to power switch tube turn off transient process include with
Lower step:
S1, turn-off delay stage, the driving circuit export the gate electrode resistance of small resistance value；
S2, voltage ascent stage, the continuous discrete tune of driving circuit dynamic during power switch tube voltage declines
Save output resistance；By the collection emitter voltage waveform of original single slope, it is adjusted to have more preferable inhibiting effect to electromagnetic interference
Gauss S type voltage waveform；As a kind of preferred embodiment of the present invention, the step S2 method of adjustment are as follows: decline virtual voltage
The slope of curve is compared with the S type slope of curve, if the absolute value of its slope is less than S type curve, selects lesser output
Gate resistance；On the contrary, selecting biggish output gate resistance if the absolute value of its slope is greater than S type curve.
S3, electric current decline stage, the driving circuit export the gate electrode resistance of big resistance value；
S4, all off stage, the driving circuit export the gate electrode resistance of small resistance value.
The present invention inhibit IGBT and MOSFET electromagnetic interference open loop active voltage driving circuit and method, by continuously from
It dissipates and adjusts gate electrode resistance resistance value size, by switching transients voltage waveform by the collection emitter voltage waveform of original single slope, adjust
Whole is the Gauss S type voltage waveform for having more preferable inhibiting effect to electromagnetic interference；Also, since the present invention mainly switched
The adjusting of journey voltage waveform, so it is above-mentioned voltage decline stage and voltage raised bench that the movement segment of control is most important
Section, the continuous discrete adjustment output gate pole electricity of active voltage driving circuit dynamic in switch tube voltage decline and voltage uphill process
Resistance value.The final present invention can select optimal gate electrode resistance to drive in each stage, to reach electromagnetic interference, voltage overshoot
Deng the smallest effect of influence.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
Invention is explained in detail, those skilled in the art should understand that: it still can be to aforementioned each implementation
Technical solution documented by example is modified or equivalent replacement of some of the technical features；And these modification or
Replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (8)
1. a kind of open loop active voltage driving circuit for inhibiting IGBT and MOSFET electromagnetic interference, the drive applied to power switch tube
In dynamic circuit, which is characterized in that the Voltag driving circuit includes drive module and gate electrode resistance；The gate electrode resistance is variable
Resistance, the gate pole of gate electrode resistance one end connection power switch tube, the other end connect the emitter of power switch tube；The drive
Dynamic model block is connect with the gate electrode resistance, to the continuous discrete change gate resistance of dynamic.
2. a kind of open loop active voltage driving circuit for inhibiting IGBT and MOSFET electromagnetic interference as described in claim 1,
It is characterized in that, the drive module includes the memory being made of driver, output stage and control unit.
3. a kind of open loop active voltage driving circuit for inhibiting IGBT and MOSFET electromagnetic interference as claimed in claim 2,
It is characterized in that,
The memory, to save gate-drive sequence and logic；
Described control unit is triggered by pwm signal, and the gate-drive sequence in memory is called in power switch tube transient process
Column and logic are to control driving signal output state；
The output stage, to according to the continuous discrete output drive signal of described control unit output state dynamic, the door
Electrode resistance changes resistance value according to driving signal.
4. a kind of open loop active voltage driving circuit for inhibiting IGBT and MOSFET electromagnetic interference as described in claim 1,
It is characterized in that, the output stage is made of two parallel drivers, respectively master driver and auxiliary actuator, and the auxiliary is driven
Dynamic device has smaller temporal resolution.
5. a kind of method for the open loop active voltage driving circuit for inhibiting IGBT and MOSFET electromagnetic interference, which is characterized in that root
Open transient process according to power switch tube the following steps are included:
S1, delayed phase is opened, the driving circuit exports the gate electrode resistance of small resistance value；
S2, electric current ascent stage, the driving circuit export the gate electrode resistance of big resistance value；
S3, voltage decline stage, the continuous discrete adjustment of driving circuit dynamic during power switch tube voltage declines are defeated
Resistance value out；By the collection emitter voltage waveform of original single slope, it is adjusted to the Gauss S for having more preferable inhibiting effect to electromagnetic interference
Type voltage waveform；
S4, the stage is all turned on, the driving circuit exports the gate electrode resistance of small resistance value.
6. a kind of side of open loop active voltage driving circuit for inhibiting IGBT and MOSFET electromagnetic interference as claimed in claim 5
Method, which is characterized in that the step S3 method of adjustment are as follows: compare virtual voltage decline curve slope and the S type slope of curve
Compared with if the absolute value of its slope selects lesser output gate resistance less than S type curve；On the contrary, if its slope it is exhausted
S type curve is greater than to value, then selects biggish output gate resistance.
7. a kind of method for the open loop active voltage driving circuit for inhibiting IGBT and MOSFET electromagnetic interference, which is characterized in that root
According to power switch tube turn off transient process the following steps are included:
S1, turn-off delay stage, the driving circuit export the gate electrode resistance of small resistance value；
S2, voltage ascent stage, the continuous discrete adjustment of driving circuit dynamic during power switch tube voltage declines are defeated
Resistance value out；By the collection emitter voltage waveform of original single slope, it is adjusted to the Gauss S for having more preferable inhibiting effect to electromagnetic interference
Type voltage waveform；
S3, electric current decline stage, the driving circuit export the gate electrode resistance of big resistance value；
S4, all off stage, the driving circuit export the gate electrode resistance of small resistance value.
8. a kind of side of open loop active voltage driving circuit for inhibiting IGBT and MOSFET electromagnetic interference as claimed in claim 7
Method, which is characterized in that the step S2 method of adjustment are as follows: compare virtual voltage decline curve slope and the S type slope of curve
Compared with if the absolute value of its slope selects lesser output gate resistance less than S type curve；On the contrary, if its slope it is exhausted
S type curve is greater than to value, then selects biggish output gate resistance.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811295752.XA CN109412394A (en) | 2018-11-01 | 2018-11-01 | Inhibit the open loop active voltage driving circuit and method of IGBT and MOSFET electromagnetic interference |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811295752.XA CN109412394A (en) | 2018-11-01 | 2018-11-01 | Inhibit the open loop active voltage driving circuit and method of IGBT and MOSFET electromagnetic interference |
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| CN111697957A (en) * | 2020-06-17 | 2020-09-22 | 上海电气集团股份有限公司 | Drive circuit applied to insulated gate bipolar transistor IGBT |
| CN111865052A (en) * | 2020-04-20 | 2020-10-30 | 成都芯源系统有限公司 | Drive circuit and drive method for driving power switch |
| CN113489288A (en) * | 2021-07-19 | 2021-10-08 | 光华临港工程应用技术研发(上海)有限公司 | Low electromagnetic interference silicon carbide power semiconductor device driving circuit method |
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Application publication date: 20190301 |
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