CN114759767A - Intelligent gate driver for silicon carbide power module - Google Patents
Intelligent gate driver for silicon carbide power module Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/40—Testing power supplies
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/40—Testing power supplies
- G01R31/42—AC power supplies
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/10—Internal combustion engine [ICE] based vehicles
- Y02T10/40—Engine management systems
Abstract
The invention discloses an intelligent gate-level driver for a silicon carbide power module, and belongs to the technical field of power electronics. The core of the intelligent digital gate driver for the silicon carbide power module is a controlled voltage source-based gate level driver, the controlled voltage source-based gate level driver dynamically adjusts the switching performance of the power module according to different working states of the module, and the aim of accurately and programmably controlling the dynamic and static performances of the silicon carbide power module is fulfilled by digitally and intelligently upgrading a gate level driving circuit of the intelligent digital gate driver, so that the switching performance and the reliability of the silicon carbide power module are improved.
Description
Priority is claimed in the present invention of a prior application ZL202110413616.1 (publication No. CN113131725A, application date 2021, 4/16).
Technical Field
The invention relates to the technical field of semiconductors, in particular to an intelligent gate-level driver for a silicon carbide power module.
Background
The electric automobile is mainly divided into several parts: the battery, the converter, the motor, Electronic Control Unit (ECU). These play a very important role in the performance and safety and reliability of the finished vehicle. An electric vehicle is a vehicle that drives the vehicle forward with an electric motor. The basic working principle of the electric automobile is that a storage battery or other devices capable of generating power or electric energy provide current, a low-voltage direct-current power supply at an output port of the battery is changed into a three-phase variable alternating-current power supply capable of driving a motor to rotate through power electronic changers (DC-DC and DC-AC), the control of output parameters such as the rotating speed and the torque of the motor is realized through a Pulse Width Modulation (PWM) technology, and then the automobile is driven to move forwards through a power transmission system.
In the energy conversion process, the power switch device plays a key control role, determines the price performance ratio of the system to a great extent, and is the weakest link in the whole chain. The semiconductor switching devices used in current power converters are mainly silicon-based Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). The devices have mature technology, higher cost and higher failure rate, and belong to consumable products. The switching frequency for its industrial application is generally within 20 kHz.
In recent years, with improvement of performance and improvement of power of third-generation semiconductor switching devices represented by materials such as silicon carbide (SiC), the performance of the semiconductor switching devices is more excellent, and the semiconductor switching devices are gradually penetrating into fields such as electric vehicles, new energy power generation, and energy storage. The switching frequency is increased by at least one order of magnitude (100kHz to MHz) over conventional silicon devices, so that the power density and performance of the converter can be improved on a large scale. And also hastened the rapid development of existing more sophisticated packaging and integration design methods and control strategies, which are particularly prominent in cost-effective demanding applications, since they are easily carried over from silicon technology. The existing power device driving circuit can realize the conduction and the closing of a power switch device, only has limited temperature measurement, overcurrent protection and overheat protection, only has a fixed soft turn-off function, and has a fixed gate-level resistor, but does not have an intelligent active driving function. The applicant loads more complex, precise and programmable chip-level control functions into the switching device driving circuit, so that the switching device is intelligentized.
The technology provided by the invention effectively increases the control function of gate-level drive, realizes the online programmable active control of the silicon carbide power semiconductor module, thereby achieving the optimization and shaping of the switching waveform of the silicon carbide power semiconductor module, exerting the optimal dynamic performance of the silicon carbide power semiconductor module, realizing the optimal configuration of stress, loss and electromagnetic interference, and being applicable to the drive circuits of various silicon carbide products.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: silicon carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have excellent performance indexes such as high switching frequency, low on-resistance and the like, but due to the limitation of functions of the existing driving circuit, the excellent performance of the silicon carbide is difficult to be fully embodied in the current practical engineering application, and further development and application of the silicon carbide are limited.
As a conventional over-design concept, derating is widely adopted by engineers in product design to limit stresses (e.g., electrical, thermal, and mechanical) acting on power semiconductor devices in the field to achieve a desired safety factor and Safe Operating Area (SOA), and this requirement is particularly prominent for wide bandgap semiconductor power devices represented by silicon carbide. This is primarily due to the extremely fast switching transients of silicon carbide devices and the associated adverse factors (e.g., current and voltage overshoot, ringing and electromagnetic interference) or reliability problems due to device aging due to long term operation. For example, degradation of performance due to aging may result in a device that has a reduced ability to withstand failure under certain hazardous operating conditions or abnormal operating conditions (e.g., over-current or short circuit), thereby disabling conventional protection functions and resulting in eventual failure. However, this traditional de-rating practice comes at the expense of power semiconductor productivity and related system performance, particularly in view of the wide operating range and environmental variables that it needs to cope with in typical operating mode applications.
Aiming at the technical problem, the technical scheme adopted by the invention is as follows:
an intelligent gate driver for a silicon carbide power module mainly comprises circuits such as front-end sensing, signal processing and active gate driving. The output stage circuit of the gate driver is composed of p-type channel and n-type channel field effect transistor (MOSFET) push-pull circuits, and two complementary FETs T1 and T2 of the MOSFET push-pull circuits are digitally controlled to enable the output voltage Uout of the MOSFET push-pull circuits to be adjusted at a voltage source UCCAnd UEEThe two complementary push-pull field effect transistors work in a switching state, and the output current of the two complementary push-pull field effect transistors is restricted by the grid resistance Rg, the parasitic inductance and the current capability of a voltage source; wherein, the push-pull circuit of the field effect transistor is provided with UCCAnd UEEThe circuit of the voltage source is an emitter follower formed by an NPN transistor T3 and a PNP transistor T4 respectively, and the circuit mainly realizes three functions: one is to ensure a sufficiently large current gain to provide the peak output and injection current required to turn on and off the load power module T1 to achieve faster switching speeds; the other is to use the function of emitter follower to pass the input voltage U of base stage B3Or UB4To achieve a T3 output voltage UCCOr T4 output voltage UEEIs adjustable between (0, U +) or (U-,0), wherein the emitter follower formed by the NPN transistor T3 is responsible for adjusting the voltage UCCThe emitter follower formed by PNP transistor T4 is responsible for regulating UEE(ii) a Third, lower output impedance and lower power loss are guaranteed.
Further, the air conditioner is provided with a fan,the double cascade circuit structure adopting multiplexing realizes the base amplitude voltage adopting digital programming control and the regulation in transient switching action, firstly, a control signal Sc from a digital controller controls a push-pull amplifier consisting of M1 and M2, and a grid resistor Rg (Rg)onOr Rgoff) To limit the gate charging or discharging current of the power module.
Furthermore, the multiplexer forms an output stage of the cascade circuit, the field effect transistor switch on each branch is sequentially controlled to be connected into or out of the branch, so that the NPN emitter follower is correspondingly controlled according to the preset voltage of the branch, each branch is cascaded with a digitally controllable voltage source on the previous branch, the size of each stage of step wave is controlled, the field effect transistor is triggered by a control signal of the digital controller according to a required control mode, the same method can also be applied to control the PNP emitter follower to control the gate-level driving voltage in the turn-off process, the segmented regulation of the base-level voltage of the emitter follower can be realized by controlling the selector switch, and the preset numerical control voltage source is correspondingly connected in each time period.
Furthermore, the digital control voltage source adopts a multiplication digital-to-analog converter (MDAC) to realize the digital programming control adjustable voltage source, which comprises a programmable multiplication digital-to-analog converter controlled by a singlechip at the upper stage through a serial port, and a downstream amplifier, which can realize the power supply of +/-15V double power sources and has the characteristics of high crown bandwidth, low noise and very low offset, drift and bias current, and the output voltage V of the circuitOUTThe calculation is as follows:
wherein D is the set digital code of MDAC, Gain is the Gain, VOUTTo output a voltage, VINIs the input voltage;
gain is given by resistance R2And R3Determining:
furthermore, the digital control voltage source adopts an adjustable precise reference source, the output voltage Vo of the adjustable stabilized voltage source is controlled by a resistor R1, and the output voltage Vo can be adjusted between 2.5V and 36V according to V0-Vref (1+ R1/R2) (Vref-2.5V).
Further, by measuring and extracting the port electrical parameter in the commutation process of the nth pulse modulation period, executing a signal processing and optimizing strategy in the period, and sending an adaptive instruction to the digital gate-level drive before the n +1 th pulse modulation period comes, the drive of the voltage source output stage for the active gate-level drive can be preset and optimized before the next turn-on or turn-off.
The principle of the invention is as follows: the invention is based on the design of novel intelligent active gate-level driving and realizing active control and health management of a silicon carbide power module, and can improve the performance, reliability and service life of the silicon carbide power module in power electronic application.
In order to free up its full potential for the fast switching and wide range of dynamic characteristic challenges of silicon carbide (SiC), the circuit states the following features:
1. the use of digital gate drivers allows for the configuration of specific gate driver parameters on-line and at the switching frequency, providing optimized and programmable control and protection for safe and reliable operation of the silicon carbide module.
2. By adopting a circuit framework of a double-cascade output stage, a multi-level, precise and preset gate-level output voltage track is provided, so that static and dynamic characteristics are adjusted and optimized, the design requirements of the high-voltage high-power silicon carbide module on efficiency improvement and electromagnetic compatibility and reliability are met. Specifically, the driver output stage is controlled by digital signals to output a programmable step voltage up to 36V (or-36V for device off) during the on (or off) transient period of the device based on a multiplexed reference source multiplexer.
3. The output stage has the characteristics of strong modularization and expansibility, so that the output stage is compatible with silicon carbide modules of different power grades and manufacturers. And the method is suitable for different links such as debugging, field application control, emergency protection, maintenance diagnosis and the like of devices.
Compared with the prior art, the invention has the advantages that:
1) advanced digital gate drive control techniques;
2) the active gates of the double cascade can update the step voltage at the switching frequency;
3) the device under different operating conditions, including failure, can be precisely adjusted.
The above 3 features are functions that are not implemented in the existing power module. The method can improve the measurement precision, is convenient for interconnection and intercommunication with a system, decomposes the basic calculation function into edge calculation and cloud calculation, and reduces unnecessary data packaging and transmission. The system operation display efficiency and the maintenance efficiency are improved, and the time and the cost are saved.
The invention can exert the performance of the silicon carbide device to the maximum extent and flexibly adapt to various loads and resources.
Compared with the traditional silicon device, the third-generation semiconductor silicon carbide device has the advantages of ultrahigh switching frequency, ultralow loss, high temperature resistance, smaller volume and the like, and is particularly suitable for electric vehicles and the like. The invention greatly promotes the application of the silicon carbide in the electric automobile and plays an important role in updating the automobile industry in China. The method can drive the development of the automobile and semiconductor upstream and downstream industries and the rapid economic integration, and is beneficial to the China automobile industry to quickly occupy the international market.
Drawings
FIG. 1 is a schematic diagram of an (n +1) pulse control strategy for a voltage source controlled gate drive according to the present invention;
FIG. 2 is a schematic diagram of the digital multilevel voltage source driving of the present invention;
FIG. 3 is a schematic diagram of the digital multilevel voltage source driving of the present invention;
FIG. 4 is a schematic diagram of the gate driving circuit triggering control of the present invention;
FIG. 5 is a schematic diagram of an adjustable voltage source for implementing digital program control based on MDAC according to the present invention;
FIG. 6 is a Zener regulator.
Detailed Description
The invention is described in detail below with reference to the drawings and specific examples.
The invention provides an intelligent gate-level driver for a silicon carbide power module, which is an intelligent gate-level driver based on an active gate level and realizes active control and health management design at the power module and sub-module level.
The intelligent gate-level driving is adopted, circuits such as front-end sensing, signal processing, active gate driving and the like are integrated through close coupling with the silicon carbide module and an internal chip of the silicon carbide module, the full-life-cycle monitoring on the performance, working condition, aging and other states of the module can be realized, meanwhile, the low-delay on-line processing on time sensitive events is provided, and meanwhile, the active closed-loop feedback regulation on the working characteristics of the silicon carbide module and the internal component chip of the silicon carbide module is realized through a silicon carbide gate-level control loop.
Compared with the traditional constant voltage drive, the intelligent gate-level drive circuit based on digital control can realize advanced monitoring and highly flexible gate drive output curve control. The self-adaptive protection and control optimization of the silicon carbide module can be realized, so that the dynamic and static performances of the silicon carbide device can be optimized and adjusted better, and the whole potential of the silicon carbide device can be exerted. Through the gate-level driven embedded processor and the online measuring circuit thereof, the working condition and performance information of the device is dynamically acquired and information processing, extraction and identification are completed in a PWM period, so as to meet the requirement of dynamically updating the gate-level drive control of the system. By collecting and processing the working state parameters of the power module, the controller adopts an n +1 information processing and control strategy, as shown in fig. 1, fig. 1 is a (n +1) pulse control strategy schematic diagram of the voltage source control gate level driving of the invention, by measuring and extracting the port electrical parameters in the commutation process of the nth pulse modulation period, the signal processing and optimization strategy is executed in the period, and an adaptive instruction is sent to the digital gate level driving before the n +1 pulse modulation period comes, so that the driving of the voltage source output level for the active gate level driving can be preset and optimized before the next turn-on or turn-off. And meanwhile, the cost and the requirement limit on the performance of measurement and control hardware can be reduced.
The flexible and controllable digital gate drive is realized by a plurality of discrete parallel push-pull circuit output stages or by a voltage source output stage based on a plurality of level outputs of a time-sharing multiplexer, so as to allow the silicon carbide device to be controlled in the processes of steady state and transient state (namely switching-on and switching-off moments) and improve the accuracy of the management of the dynamic performance of the switch of the silicon carbide device. Meanwhile, for an age-dependent SOA, a series of active gate output drive profiles are stored in a digital drive circuit (such as a read-only memory EEPROM) in advance, so that the profiles can be used as a balance between dynamic stress (i.e., current, voltage and energy) and SOA stress under extreme operating conditions, and in a specific failure event (such as short-circuit failure), the actual switching trajectory can be safely controlled to adapt to different degradation of the device and the derating effect of load conditions on the device SOA.
It should be noted that, due to the similarity of the power module packaging and gate level characteristics, the intelligent gate level driving technique of the present invention is also applicable to silicon-based IGBT power modules and carbon-based/silicon-based hybrid power modules through necessary design and adjustment.
The invention provides a programmable digital voltage source driver which is different from a traditional voltage source driver and realizes more complex, precise and programmable chip-level control on a power semiconductor through structural and functional integration. As shown in fig. 2, the present invention designs and integrates a digital microcontroller (such as a DSP or an FPGA) on a conventional gate-level driving circuit, so as to control a power module by controlling a plurality of amplifiers (buffers) of different voltage output levels according to a preset dynamic voltage trajectory updated online, thereby actively saving a dynamic switching trajectory of the power module, so that the power module effectively adapts to switching stress, loss, and electromagnetic interference at different operating points or under healthy conditions, and optimizing a switching process of the power module by precise gate-level control.
The invention providesA controlled voltage source based gate level driver dynamically adjusts the switching performance of the power module based on different operating conditions of the module (e.g., different operating points and health conditions). The front-end controllable gate-level circuit is shown in figure 3. The driver output stage circuit is composed of a P-type channel and N-type channel field effect transistor (MOSFET) push-pull circuit. Two complementary field effect transistors T1 and T2 of the circuit enable the output voltage Uout thereof to be connected with a voltage source U through digital controlCCAnd UEETo switch between them. The two complementary push-pull field effect transistors work in a switching state, so that the output current of the two complementary push-pull field effect transistors is limited by a grid resistor Rg, a parasitic inductor and the current capacity of a voltage source. The circuit mainly realizes three functions: one is to ensure a sufficiently large current gain to provide the peak output and injection current required to turn on and off the load power module T1(MOSFET or IGBT module) to achieve faster switching speed; the other is to input the voltage U to the base stage by using the function of the emitter followerB3(or U)B4) To achieve the T3 output voltage UCC(or T4 output voltage UEE) Is adjustable between (0, U +) (or between (U-, 0)). Wherein, emitter follower composed of NPN transistor T3 is responsible for regulating voltage U CCThe emitter follower formed by PNP transistor T4 is responsible for regulating UEE(ii) a Third, lower output impedance and lower power loss are guaranteed.
In order to realize a digitally programmed base amplitude voltage, a conventional digital-to-analog converter (DAC) or an adjustable voltage source can be used in principle, but a circuit capable of providing a higher bandwidth and a higher voltage amplitude variation range is required for realizing adjustment in transient switching action of the SiC device, compared to the higher voltage and current variation rates during switching on and off of the device. Therefore, the invention adopts a multiplexing double-cascade circuit structure to achieve the above two purposes.
As shown in FIG. 4, firstly, a push-pull amplifier composed of M1 and M2 is controlled by a control signal Sc from a digital controller, and a gate resistor Rg (Rg)onOr Rgoff) To limit the gate charging or discharging current of the power module. To satisfy the adjustable heightThe gate level of the output bandwidth drives the output voltage function, which is described by taking the turn-on process as an example. The base voltage of transistor T3 is controlled by a multiplexer (n-way). Taking n-4 as an example, the multiplexer can selectively connect 4 different preset voltages to the base of T3 in a time-sharing manner to satisfy the output requirement of the multi-step wave of the gate driving voltage shown in fig. 2.
The multiplexers constitute the output stages of the cascade. It switches in and out of each branch by controlling the field effect transistor (Ma1-Ma4) switch in turn, thereby controlling transistor T3 according to the voltage preset by the branch. Each path is cascaded with a digitally controllable voltage source of the previous stage, so as to control the magnitude of each step wave as shown in fig. X2. The field effect transistors (Ma1-Ma4) are triggered by control signals Sa1-Sa4 of a digital controller according to a required control mode. The same method can be applied to the gate drive voltage that controls transistor T4 to control the turn-off process. Through the control of the 4 selection switches Ma1-Ma4, the segmented regulation of the base stage voltage of the emitter follower can be realized, and a preset numerical control voltage source is correspondingly switched on in each time period.
The digitally controlled voltage source in each branch is the upper stage of the multiplexer, which is essentially an adjustable voltage source, which can be accomplished by a digitally controlled DAC or reference source. The invention points out the following two cheap and effective implementation schemes, but more solutions can be derived, and the function replacement can be carried out according to the engineering requirements. Because the digital programming of the voltage source is done within the PWM period, most designs can meet the bandwidth requirements.
One is a multiplying digital-to-analog converter MDAC, which, as shown in fig. 5, can achieve a bandwidth of MHz or more by using a bipolar reference voltage higher than a power supply voltage, as compared to a DAC formed by a weight resistor network or an inverted-T resistor network. The circuit comprises a programmable multiplication digital-to-analog converter (AD5453) which is controlled by a singlechip at the upper stage through a serial port, and a downstream amplifier (ADA4637), wherein the programmable multiplication digital-to-analog converter can realize +/-15V double-power-supply power supply and has the characteristics of high crown bandwidth, low noise, very low offset, drift and bias current. The output Voltage (VOUT) of the circuit is calculated as follows (where D is the set digital code of the MDAC):
gain is formed by resistor R2And R3Determining:
the second is an adjustable precision reference source, in which the output voltage Vo of the adjustable voltage-stabilized power supply shown in fig. 6 is controlled by a resistor R1, and is adjustable between 2.5V and 36V according to V0 ═ Vref (1+ R1/R2) (Vref ═ 2.5V).
The invention and its embodiments have been described above schematically without limitation, and the invention can be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The representation in the drawings is only one of the embodiments of the invention, the actual construction is not limited thereto, and any reference signs in the claims shall not limit the claims concerned. Therefore, if a person skilled in the art receives the teachings of the present invention, without inventive design, a similar structure and an embodiment to the above technical solution should be covered by the protection scope of the present patent. Furthermore, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" preceding an element does not exclude the inclusion of a plurality of such elements. Several of the elements recited in the product claims may also be implemented by one element in software or hardware. The terms first, second, etc. are used to denote names, but not any particular order.
Claims (6)
1. An intelligent gate level driver for a silicon carbide power module, characterized by: the intelligent driver comprises a controlled voltage source based gate level driver which is different according to the silicon carbide power moduleThe output stage circuit of the gate driver based on the controlled voltage source is composed of a p-type channel field effect transistor (MOSFET) push-pull circuit and an n-type channel field effect transistor (MOSFET) push-pull circuit, and two complementary field effect transistors T1 and T2 of the MOSFET push-pull circuit are digitally controlled to enable the output voltage Uout of the MOSFET push-pull circuit to be adjusted at a voltage source UCCAnd UEEThe two complementary push-pull field effect transistors work in a switching state, and the output current of the two complementary push-pull field effect transistors is restricted by the grid resistance Rg, the parasitic inductance and the current capability of a voltage source; wherein, the push-pull circuit of the field effect transistor is provided with UCCAnd UEEThe circuit of the voltage source is an emitter follower formed by a transistor T3 and a transistor T4 respectively, and the circuit mainly realizes three functions: one is to ensure a sufficiently large current gain to provide the peak output and injection current required to turn on and off fet T1 to achieve faster switching speeds; the other is to use the function of emitter follower to pass the input voltage U of base stage B3Or UB4To achieve a T3 output voltage UCCOr T4 output voltage UEEIs adjustable between (0, U +) or (U-,0), wherein the emitter follower formed by the NPN transistor T3 is responsible for adjusting the voltage UCCThe emitter follower formed by PNP transistor T4 is responsible for regulating UEE(ii) a Third, lower output impedance and lower power loss are guaranteed.
2. An intelligent gate-level driver for a silicon carbide power module as claimed in claim 1, wherein: the method adopts a multiplexing double cascade circuit structure and a digital programming control technology to realize the adjustment of base amplitude voltage and transient switching action, the multiplexing double cascade circuit controls a push-pull amplifier consisting of M1 and M2 through a control signal Sc of a digital controller, and passes through a grid resistor Rg (Rg)onOr Rgoff) To limit the gate charging or discharging current of the power module.
3. An intelligent gate-level driver for a silicon carbide power module as claimed in claim 2, wherein: the multiplexer forms an output stage of the cascade circuit, the field effect transistor switch on each branch circuit is sequentially controlled to be connected in or out of the branch circuit, the output of the transistor T3 is controlled according to the preset voltage value of the branch circuit, the amplitude of the output voltage of the controllable voltage source is used for controlling the size of each stage of step wave, and the field effect transistor is triggered by the control signal of the digital controller according to the required control mode; the same applies to the gate drive voltage for controlling the transistor T4 to control the switching-off process, and by controlling the selector switch, a stepped adjustment of the base voltage of the transistor T4 is likewise possible, with a corresponding switching-on of the preset digitally controlled voltage source in each time interval.
4. An intelligent gate-level driver for a silicon carbide power module as claimed in claim 3, wherein: digitally controlled voltage sources use multiplying digital-to-analog converters (MDACs) to achieve digitally programmed regulation of output voltage). The programmable multiplication digital-to-analog converter is controlled by a single chip microcomputer, and the output voltage V of the circuitOUTThe calculation is as follows:
wherein D is the set digital code of MDAC, Gain is the Gain, VOUTTo output a voltage, VINIs the input voltage;
gain is formed by resistor R2And R3Determining:
5. a smart gate driver for a silicon carbide power module as claimed in claim 3, wherein: the digital control voltage source adopts an adjustable precision reference source, the output voltage Vo of the adjustable precision reference source is controlled by a resistor R1, and the output voltage Vo can be adjusted between 2.5V and 36V according to V0-Vref (1+ R1/R2) (Vref-2.5V).
6. An intelligent gate-level driver for a silicon carbide power module as claimed in claim 1, wherein: by measuring and extracting the electrical parameters of the port in the commutation process of the nth pulse modulation period, executing a signal processing and optimizing strategy in the period, and sending an adaptive instruction to the digital gate-level drive before the (n + 1) th pulse modulation period comes, the drive of the voltage source output stage for the active gate-level drive can be preset and optimized before the next turn-on or turn-off.
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| US20180367137A1 (en) * | 2017-06-16 | 2018-12-20 | Alejandro Pozo Arribas | Advanced gate drivers for silicon carbide bipolar junction transistors |
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