CN108259027A - The driver and driving method of the gate drive voltage of Serial regulation IGBT - Google Patents
The driver and driving method of the gate drive voltage of Serial regulation IGBT Download PDFInfo
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- CN108259027A CN108259027A CN201611237181.5A CN201611237181A CN108259027A CN 108259027 A CN108259027 A CN 108259027A CN 201611237181 A CN201611237181 A CN 201611237181A CN 108259027 A CN108259027 A CN 108259027A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0036—Means reducing energy consumption
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0081—Power supply means, e.g. to the switch driver
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Abstract
The present invention relates to the drivers and driving method of the gate drive voltage of Serial regulation IGBT.The driver of the gate drive voltage of Serial regulation IGBT according to an embodiment of the invention includes drive control module and variable DC voltage source module.Drive control module opens shutdown control signal generation power control signal, and power control signal is supplied to variable DC voltage source module in response to IGBT's.Variable DC voltage source module generates the variable DC voltage of linear change within a predetermined range, gate drive voltage of the variable DC voltage as IGBT in response to power control signal.
Description
Technical field
Driver and drive the present invention relates to the gate drive voltage of the driver more particularly to Serial regulation IGBT of IGBT
Dynamic method.
Background technology
The driver of IGBT (insulated gate bipolar transistor) is the dress for driving IGBT and being regulated and controled to its overall performance
It puts.The selection of driver influences the dynamic switch Performance And Reliability of IGBT.In field of power electronics, the gate pole of IGBT is driven
Voltage-controlled driver is moved, constant opening is usually used and turns off driving voltage to drive IGBT, and passes through to change and drive
The gate resistance of device controls filling for the Cge of IGBT and Cgc (equivalent capacity of gate pole to emitter and gate pole to collector)
The velocity of discharge matches corresponding IGBT, and then control opening for IGBT to reach the pace of change of Vge (gate pole to emitter voltage)
Logical turn-off performance.
Due to changing the regulative mode of gate resistance using fixed driving voltage, after gate resistance determines,
The rise/fall speed of the Vge voltages of IGBT is only dependent upon the influence of the parameter and charging and discharging circuit parameter of IGBT, for
The control of Vge voltages continuously adjusts, IGBT's is open-minded than relatively low so multistage can not be carried out to Vge according to the characteristics of IGBT
The adjustable range of turn-off speed is also narrow, and the change of gate resistance is very big for the influence for opening shutdown delay.
Invention content
The embodiment of the present invention provides a kind of driver of the gate drive voltage of Serial regulation IGBT, including drive control
Module and variable DC voltage source module, wherein drive control module open shutdown control signal generation power supply control in response to IGBT's
Signal processed, and power control signal is supplied to variable DC voltage source module；Variable DC voltage source module is controlled in response to power supply
Signal generates the variable DC voltage of linear change within a predetermined range, gate-drive electricity of the variable DC voltage as IGBT
Pressure.
In some embodiments, drive control module opens shutdown control signal in IGBT opening processes in response to IGBT
Middle adjustment power control signal, and variable DC voltage source module is generated in response to adjusted power control signal in predetermined model
Enclose interior linear raised variable DC voltage；Drive control module is turned off in response to the shutdown control signal of opening of IGBT in IGBT
Power control signal is adjusted in the process, and variable DC voltage source module is generated in response to adjusted power control signal pre-
Determine the variable DC voltage of linear reduction in range.
In some embodiments, drive control module opens shutdown control signal adjustment power supply control letter in response to IGBT
Number, and variable DC voltage source module generates in response to adjusted power control signal and presses predetermined slope line within a predetermined range
Property variation variable DC voltage.
In some embodiments, the driver of the gate drive voltage of Serial regulation IGBT further includes：Feedback information detection
Feedback information for detection and the relevant feedback informations of IGBT, and is supplied to drive control module by module.Drive control module
Power control signal is adjusted, and adjusted power control signal is supplied to variable DC power supply mould in response to feedback information
Block.
In some embodiments, feedback information detection module includes DC bus-bar voltage detection module, current detection module
And at least one of temperature detecting module.DC bus-bar voltage detection module is used to detect the DC bus-bar voltage of the IGBT
Value, and the d-c bus voltage value of detected IGBT is supplied to drive control module as feedback information.Current detecting
Module is used to detect the load current value of IGBT, and the load current value of detected IGBT is supplied to drive control module
As feedback information.Temperature detecting module is used to detecting the chip temperature of IGBT, and by the chip temperature of detected IGBT
Drive control module is supplied to as feedback information.
In some embodiments, power control signal is duty cycle control signal, and variable DC voltage source module responds
The duty ratio of the pwm pulse waveform in variable DC voltage source module is adjusted in duty cycle control signal to generate variable DC voltage
Pressure.
In some embodiments, variable DC voltage is supplied to drive control module by variable DC voltage source module, driving
Control module is monitored variable DC voltage and variable DC voltage is supplied to gate-drive electricity of the IGBT as IGBT
Pressure.
The embodiment of the present invention additionally provides a kind of driving method of the gate drive voltage of Serial regulation IGBT, including sound
Shutdown control signal generation power control signal should be opened in IGBT；In response to power control signal generation within a predetermined range
The variable DC voltage of linear change；And variable DC voltage is supplied to gate drive voltages of the IGBT as IGBT.
In some embodiments, above-mentioned driving method further include in response to IGBT open shutdown control signal opened in IGBT
Adjustment power control signal during logical, and in response to the generation of adjusted power control signal within a predetermined range by predetermined
The linear raised variable DC voltage of the rate of rise；It is adjusted in IGBT turn off process in response to the shutdown control signal of opening of IGBT
Whole power control signal, and predetermined descending slope line is pressed within a predetermined range in response to the generation of adjusted power control signal
Property reduce variable DC voltage.
In some embodiments, above-mentioned driving method further includes detection and the relevant feedback informations of IGBT；In response to feedback
Information adjusts power control signal；And generate variable DC voltage in response to adjusted power control signal.
The driver and driving method of the gate drive voltage of Serial regulation IGBT according to an embodiment of the invention pass through
It, can be according to the characteristics of IGBT and working condition is switched on or off in IGBT to the Serial regulation of the gate drive voltage of IGBT
Different phase applies IGBT the gate drive voltage of linear change, and can precisely control IGBT opens turn-off performance,
Such as the diode reverse recovery overvoltage stress in the shutdown overvoltage stress and opening process of IGBT.Furthermore, it is possible to root
According to the feedback of the information of such as DC bus-bar voltage, IGBT load currents and chip temperature etc, pass through Serial regulation IGBT's
Gate drive voltage so that the control of IGBT is more intelligent.For example, have under the high DC bus-bar voltage of low temperature more flexible
Switching speed brings lower collector to the overvoltage stress of emitter；It can root in the case of sinewave output electric current
It adjusts the switching speed of IGBT in real time according to size of current, reduces the switching loss of IGBT so that IGBT can obtain higher electricity
Current voltage utilization rate improves the power density of system.
Description of the drawings
From below in conjunction with the accompanying drawings to the present invention specific embodiment description in may be better understood the present invention wherein,
The same or similar reference numeral represents the same or similar feature.
Fig. 1 shows the example of the driver of the gate drive voltage of Serial regulation IGBT according to an embodiment of the invention
Property structure；
Fig. 2 shows the Vge voltages of the IGBT driven by driver according to an embodiment of the invention in the ideal case
Exemplary variations waveform；
Fig. 3 shows the another of the driver of the gate drive voltage of Serial regulation IGBT according to an embodiment of the invention
Example arrangement；
Fig. 4 shows the example of the driver of the gate drive voltage of Serial regulation IGBT according to an embodiment of the invention
Property configuration；
Fig. 5 shows the drive in the driver of the gate drive voltage of Serial regulation IGBT according to an embodiment of the invention
The exemplary configuration of dynamic control module；And
Fig. 6 shows showing for the driving method of the gate drive voltage of Serial regulation IGBT according to an embodiment of the invention
Example property flow chart.
Reference sign：100th, 300- drivers；101st, 301- variable DC voltages source module；102nd, 302- drive controls
Module；303- feedback information detection modules；3031- DC bus-bar voltage detection modules；3032- current detection modules；3033- temperature
Spend detection module；401- separate ACs/DC power supply；402- drive control modules；403- DC bus-bar voltage detection modules；404-
Current detection module 404；405- temperature detecting modules；406- driving voltage amplification modules；407-IGBT short-circuit detecting circuits；
501- signal processing blocks；502- logical process blocks；503- power supplys handle block；504- protection processing blocks.
Specific embodiment
The feature and exemplary embodiment of various aspects of the invention is described more fully below.In following detailed description
In, it is proposed that many details, in order to provide complete understanding of the present invention.But to those skilled in the art
It will be apparent that the present invention can be implemented in the case of some details in not needing to these details.Below to implementing
The description of example is used for the purpose of by showing that the example of the present invention is better understood from the present invention to provide.The present invention never limits
In any concrete configuration set forth below and structure, but cover under the premise of without departing from the spirit of the present invention element,
Any modification, replacement and the improvement of component and module.In the the accompanying drawings and the following description, well known structure and skill is not shown
Art is unnecessary fuzzy to avoid causing the present invention.
Fig. 1 shows that the gate pole of Serial regulation IGBT (insulated gate bipolar transistor) according to an embodiment of the invention drives
The exemplary block diagram of the driver 100 of dynamic voltage.Driver 100 can be provided for IGBT can continuously linear adjustment gate pole
Driving voltage.As shown in Figure 1, driver 100 includes variable DC voltage source module 101 and drive control module 102.Variable dc
Power module 101 can be AC/DC modules, such as separate AC/DC modules.When variable DC voltage source module 101 is AC/DC moulds
During block, 220V AC voltage can be provided from uninterruptible power supply UPS to variable DC voltage source module 101, then variable DC voltage
Source module 101 carries out controllable AC/DC to 220V AC voltage and converts, and generation can be linear in preset range (such as 1-5V)
The variable DC voltage of variation.Variable DC voltage source module 101 can also be DC/DC modules, for example, Buck, Boost, normal shock,
Circuit of reversed excitation etc..When variable DC voltage source module 101 is DC/DC modules, variable DC voltage source module 101 can be by fixed
DC-voltage supply, then the DC/DC conversion controllable to the progress of fixed DC voltage of variable DC voltage source module 101, generation
Can linear change within a predetermined range variable DC voltage.Drive control module 102 can be in response to higher-level master controller
The IGBT's issued opens shutdown control signal generation power control signal, and power control signal is supplied to variable DC voltage
Source module 101.In an embodiment of the present invention, master controller is, for example, DSP28335 control chips or the DSP of C6000 series
Control chip etc..Then, variable DC voltage source module 101 can be given birth in response to the power control signal Serial regulation received
Into variable DC voltage voltage value, then the variable DC voltage can be applied to as the gate drive voltage of IGBT
The gate pole of IGBT, and then control the switch performance of IGBT.
In an embodiment of the present invention, gate drive voltage on IGBT is applied to by LINEAR CONTINUOUS adjustment, it can be with
Reduce that IGBT is opened in turn off process due to Vge voltage transients and caused by impact.In addition, the difference being switched on or off in IGBT
Stage can provide the gate drive voltage of continuously linear variation, accelerate or slow down gate pole charge/discharge rates, realize flexible control
System.For example, in the opening process of IGBT, drive control module 102 can generate the power control signal of consecutive variations, and will
The power control signal is supplied to variable DC voltage source module 101 so that variable power supply module 101 can be controlled in response to power supply
The raised variable DC voltage of signal generate line.After the opening of IGBT, drive control module 102 can be to variable dc
Power module 101 provides power control signal so that variable power supply module 101 has in response to power control signal generation fixes
The variable DC voltage of value.The fixed value is adjustable, such as 5V.In the turn off process of IGBT, drive control module 102 can
To provide power control signal to variable DC voltage source module 101 so that variable power supply module 101 is in response to power control signal
Generate the variable DC voltage of linear reduction.So as to which in the different phase that IGBT is switched on or off, linear adjustment straightens
Galvanic electricity pressure is used as the gate drive voltage of IGBT.Fig. 2 shows driven by driver according to an embodiment of the invention
IGBT Vge voltages in the ideal case exemplary variations waveform.As shown in Fig. 2, Vge turns on and off process in IGBT
In can be linear continuous variation.In addition, the linear rise of Vge or the slope of decline are also adjustable so that can basis
Application environment or working characteristics the adjustment IGBT's of IGBT turns on and off speed.
As described above, IGBT drivers according to an embodiment of the invention can adjust to drive IGBT's with LINEAR CONTINUOUS
Gate drive voltage.Based on this function, can according to the characteristics of IGBT and working condition provides feedback information for IGBT drivers,
IGBT drivers is allowd intelligently to adjust the gate drive voltage of IGBT in real time in response to received feedback information.Figure
3 show the example arrangement of the driver 300 of the gate drive voltage of Serial regulation IGBT according to an embodiment of the invention
Block diagram.The driver 300 includes variable DC voltage source module 301, drive control module 302 and feedback information detection module 303.
In figure 3 in shown the embodiment of the present invention, the variable DC voltage source module 101 in variable DC voltage source module 301 and Fig. 1
It is identical, it is not described herein.Drive control module 302 is similar with the drive control module 102 in Fig. 1, only driving control
Molding block 302 can receive the feedback information provided by feedback information detection module 303, and generate power supply in response to feedback information
Signal is controlled, with the variable DC voltage that variable DC voltage source module 101 is controlled to be generated.Feedback information detection module 303 can
To include DC bus-bar voltage detection module 3031, current detection module 3032 and temperature detecting module 3033, but this field
Technical staff should understand that feedback information detection module 303 can include the parameter for detecting the other parameters related with IGBT
Detection module.
DC bus-bar voltage detection module 3031 can be direct current bus voltage detecting circuit, for detecting feedback in real time
DC bus-bar voltage between the collector and emitter of IGBT.Current detection module 3032 can be the load current inspection of IGBT
Slowdown monitoring circuit, for detecting the load current size of feedback IGBT in real time.Temperature detecting module 3033 can be the chip temperature of IGBT
Detection circuit is spent, for detecting the chip temperature of feedback IGBT in real time.
Drive control module 302 can receive the DC bus-bar voltage feedback from DC bus-bar voltage detection module 3031
Signal, the load current feedback signal of IGBT from current detection module 3032 and from temperature detecting module 3033
The chip temperature feedback signal of IGBT, and generated power control signal can be adjusted in real time according to these feedback signals,
Allow variable DC voltage source module 301 in response to the power control signal Serial regulation after adjustment its generation variable dc
Voltage, for driving IGBT.Then drive control module 302 receives feedback signal again, forms PID (proportional-integral-differential)
Feedback element constantly adjusts power control signal in real time, achievees the purpose that the gate drive voltage of accurate adjusting control IGBT.
By taking photovoltaic combining inverter (DC/AC transformation) as an example, inverter under winter limiting temperature (- 40 DEG C) light at noon
According to intensity it is good in the case of receive enabled instruction.Due to the characteristic of photovoltaic solar cell panels, in very low temperature environment
Under IGBT DC bus-bar voltage it is higher.In this case, drive control module 302 receives DC bus-bar voltage detection
The high DC bus-bar voltage signal that module 3031 is fed back, by adjusting the power control signal of variable DC voltage source module is controlled,
Control is linearly slowly varying as the variable DC voltage of the gate drive voltage of IGBT, so as to make the Vge voltages of IGBT slow
Variation.In this way, be equivalent to IGBT opens shutdown resistance with larger, IGBT opens slowing for shutdown, limits IGBT's
The rate of change of electric current and voltage, and then over-voltage stress, ensure the safe operation of IGBT.When IGBT runs a period of time
Afterwards, when chip temperature is risen to a certain extent, drive control module 302 becomes further according to the Vge voltages of feedback signal control IGBT
Change speed to accelerate, and then accelerate IGBT and turn on and off speed, reaching reduces IGBT losses, controls IGBT module inside chip
The purpose of temperature.In addition, when IGBT works at low currents, drive control module 302 receives current detection module
The small load current signal of 3032 feedbacks adjusts power control signal according to the feedback signal so that in IGBT opening processes,
Vge voltages slowly rise, and in IGBT turn off process, Vge voltage rapid decreases, so as to reach the inverse parallel two of control IGBT
The purpose of turn-off time is shortened in the low reverse recovery current of pole pipe and rapidly switching off for IGBT.
Fig. 4 shows the driver 400 of the gate drive voltage of Serial regulation IGBT according to an embodiment of the invention
Exemplary configuration.In the exemplary configuration, driver 400 include separate AC/DC power supply 401, drive control module 402,
DC bus-bar voltage detection module 403, current detection module 404, temperature detecting module 405,406 and of driving voltage amplification module
IGBT short-circuit detecting circuits 407.Separate AC/DC power supply 401 is corresponding with the variable DC voltage source module shown in Fig. 1, should
Module carries out AC/DC conversions to the 220V AC voltage from uninterruptible power supply UPS, and generation can be provided to drive control mould
The constant operating voltage (such as 3.3V) of block 402, and the control of the power control signal provided in drive control module 402
Lower generation can in the range of 1-5V linear change variable DC voltage, which passes through drive control module 402
The gate pole of IGBT is monitored and be applied to after the amplification of driving voltage amplification module 406, controls turning on and off for IGBT.
Drive control module 402 (is, for example, the DSP controls of DSP28335 control chips or C6000 series in response to higher-level master controller
Coremaking piece etc.) IGBT that issues opens shutdown control signal and generates variable power supply control in the IGBT different phases turned on and off
Signal processed so that separate AC/DC power supply 401 generates straightening for linear continuous variation in the process in turning on and off for IGBT
Galvanic electricity pressure.So as to which under the driving of linearly continuously adjustable variable DC voltage, the performance that turns on and off of IGBT can basis
The working condition of IGBT and application scenario are adjusted on a large scale.Power control signal may, for example, be duty cycle control signal.Example
Such as, the output negative pole voltage stabilization of separate AC/DC power supply 401 is -10V by drive control module 402, and isolated by giving
AC/DC power supplys 401 provide different duty cycle control signals to control the pwm pulse waveform in separate AC/DC power supply 401
Duty ratio so as to make its anode output linear change in the range of 11-15V, realizes the variable DC voltage output of 1-5V.This
In, the power control signal for controlling variable DC voltage is not limited to duty cycle control signal, and those skilled in the art are easy
Expect that other control variable DC voltage source modules generate the mode of the variable DC voltage of linear change according to power control signal,
Such as 4-20mA Analog control modes, RS485 communication modes and fiber optic communication mode.
DC bus-bar voltage detection module 403, current detection module 404, temperature detecting module 405 are respectively used to driving
The load current feedback signal and IGBT of the real-time DC bus-bar voltage feedback signal that IGBT is provided of control module 402, IGBT
Chip temperature feedback signal.In response to these feedback signals, drive control module 402 can adjust generated electricity in real time
Source controls signal, and then realizes and the intelligence of the gate drive voltage of IGBT is adjusted so that IGBT is in varying environment and work item
Characteristic under part can be different, the reliability and the adaptability to environment for greatly improving IGBT.
In addition, driver 400 further includes such as driving voltage amplification module 406, for being amplified to driving voltage, into
And control turning on and off for high-power IGBT；And IGBT short-circuit detecting circuits 407, for judging the short-circuit conditions of IGBT.
In order to which the realization process of the embodiment of the present invention is described in more detail, described with reference to Fig. 5 according to the present invention
The exemplary configuration of the drive control module 402 of embodiment.Fig. 5 shows Serial regulation IGBT according to an embodiment of the invention
Gate drive voltage driver 400 in drive control module 402 exemplary configuration.As shown in figure 5, illustrative drive
Dynamic control module 402 can be included at signal processing block 501, logical process block 502, power supply processing block 503 and protection
Manage block 504.Signal processing block 501 can be used for reception IGBT and open shutdown control signal, which passes through low pass
The IGBT used in drive control module 402 control signals Pon is obtained after filtering wave by prolonging time and isolation processing.The control signal
Pon is delivered to logical process block 502.When signal Pon is controlled to be changed into high level signal (1) by low level signal (0),
Logical process block 502 exports the Lon signals (1) of high level, and control IGBT opens (Loff outputs are 0), and output is suitable
Duty cycle control signal controls VCC voltages, exports the IGBT gate drive voltages for the linear change that 5V is gradually promoted to from 1V；
When signal Pon is controlled to be changed into low level signal (0) by high level signal (1), logical process block 502, which exports, suitably to be accounted for
Sky controls VCC voltages, exports the IGBT gate drive voltages for the linear change that 1V is gradually decrease to from 5V, so than control signal
Control IGBT shutdowns afterwards (Loff outputs are 1).Logical process block 502 can provide corresponding duty ratio control according to actual needs
Signal processed so that the slope of VCC voltage linears variation is adjustable.In addition, logical process block 502 can also be all by analyzing
If DC bus-bar voltage detects signal, IGBT current detection signals and IGBT temperature detect the feedback signal of signal etc, to this
A little feedback signals provide the PWM duty cycle signal of control VCC voltages after being handled.Power supply processing block 503 can be used for connecing
The variable DC voltage of variable DC power supply output is received and monitors, it will be between the emitter of IGBT and the AGND of variable DC power supply
Current potential clamper in -10V, the voltage between the emitter of IGBT and the VCC of variable DC power supply is maintained at 11-15V ranges
It is interior, so as to export the IGBT gate drive voltages of linear change in the range of 1-5V.Protection processing block 504 can be used for detecting
Short circuit (surrender and) state of IGBT, and short-circuit signal is passed into signal processing block 501 to block IGBT behind the door by non-
High level output pulse.
Above to the example arrangement of the driver of the gate voltage of Serial regulation IGBT according to an embodiment of the invention
It is described with configuration.Above structure diagram and configuration function module shown in figure can be implemented as hardware, software, consolidate
Part or combination thereof.When realizing in hardware, may, for example, be electronic circuit, application-specific integrated circuit (ASIC),
Appropriate firmware, plug-in unit, function card etc..When being realized with software mode, element of the invention is used to perform required appoint
The program or code segment of business.Either code segment can be stored in machine readable media or by being carried in carrier wave program
Data-signal given in transmission medium or communication links." machine readable media " can include being capable of storage or transmission letter
Any medium of breath.The example of machine readable media includes electronic circuit, semiconductor memory devices, ROM, flash memory, erasable
ROM (EROM), floppy disk, CD-ROM, CD, hard disk, fiber medium, radio frequency (RF) link, etc..Code segment can be via such as
The computer network of internet, Intranet etc. is downloaded.
The embodiment of the present invention additionally provides a kind of driving method of the gate drive voltage of Serial regulation IGBT.Fig. 6 shows
The exemplary process diagram of the driving method 600 is gone out.As shown in fig. 6, driving method 600 includes step 601, in response to IGBT's
Open shutdown control signal generation power control signal；Step 602, line within a predetermined range is generated in response to power control signal
Property variation variable DC voltage；And step 603, variable DC voltage is supplied to gate-drive electricity of the IGBT as IGBT
Pressure.In an embodiment of the present invention, such as in step 601 it was opened in response to the shutdown control signal of opening of IGBT in IGBT
Power control signal is adjusted in journey, is then generated in step 602 in response to adjusted power control signal in preset range
Interior linear raised variable DC voltage；And it is closed in step 601 in response to the shutdown control signal of opening of IGBT in IGBT
Adjustment power control signal during disconnected, then generates in response to adjusted power control signal predetermined in step 602
In the range of linear reduction variable DC voltage.In an embodiment of the present invention, in another example in step 601 in response to IGBT's
Shutdown control signal adjustment power control signal is opened, and is given birth in step 602 in response to adjusted power control signal
Into the variable DC voltage for pressing predetermined slope linear change within a predetermined range.Driving method according to an embodiment of the invention is also
It can include detection and the relevant feedback informations of IGBT；Power control signal is adjusted in response to feedback information；And in response to warp
The power control signal generation variable DC voltage of adjustment.Here, the d-c bus voltage value of feedback information such as IGBT, IGBT
Load current size or IGBT chip temperature etc..
Note that features described above, structure or characteristic can be incorporated in any suitable manner it is one or more
In embodiment.In above description, provide many details and the embodiment of the present invention is fully understood so as to provide.
It will be appreciated, however, by one skilled in the art that can put into practice technical scheme of the present invention without one in specific detail or
More or it may be used other methods, constituent element, material etc..In other cases, it is not shown in detail or describes known tie
Structure, material or operation to avoid the fuzzy present invention major technique intention.
Claims (10)
1. a kind of driver of the gate drive voltage of Serial regulation IGBT, which is characterized in that including drive control module and can
Inversion of direct current power module, wherein：
The drive control module opens shutdown control signal generation power control signal, and by described in response to the IGBT's
Power control signal is supplied to the variable DC voltage source module；
The variable DC voltage source module generates the variable of linear change within a predetermined range in response to the power control signal
DC voltage, gate drive voltage of the variable DC voltage as the IGBT.
2. driver according to claim 1, which is characterized in that
The drive control module is adjusted in response to the shutdown control signal of opening of the IGBT in the IGBT opening processes
The power control signal, and the variable DC voltage source module exists in response to the adjusted power control signal generation
The linear raised variable DC voltage in the preset range；
The drive control module is adjusted in response to the shutdown control signal of opening of the IGBT in the IGBT turn off process
The power control signal, and the variable DC voltage source module exists in response to the adjusted power control signal generation
The variable DC voltage of linear reduction in the preset range.
3. driver according to claim 1, which is characterized in that
The drive control module adjusts the power control signal in response to the shutdown control signal of opening of the IGBT, and
The variable DC voltage source module is pressed predetermined in response to the adjusted power control signal generation in the preset range
The variable DC voltage of slope linear change.
4. the driver described in any claim in claims 1 to 3, which is characterized in that further include：
Feedback information detection module for detection and the relevant feedback informations of the IGBT, and the feedback information is supplied to
The drive control module,
The drive control module adjusts the power control signal, and the adjusted electricity in response to the feedback information
Source control signal is supplied to the variable DC voltage source module.
5. driver according to claim 4, which is characterized in that
The feedback information detection module is included in DC bus-bar voltage detection module, current detection module and temperature detecting module
It is at least one；
The DC bus-bar voltage detection module is used to detecting the d-c bus voltage value of the IGBT, and by detected institute
The d-c bus voltage value for stating IGBT is supplied to the drive control module as the feedback information；
The current detection module is used to detecting the load current value of the IGBT, and by the load of the detected IGBT
Current value is supplied to the drive control module as the feedback information；
The temperature detecting module is used to detecting the chip temperature of the IGBT, and by the chip temperature of the detected IGBT
Degree is supplied to the drive control module as the feedback information.
6. driver according to claim 5, which is characterized in that
The power control signal is duty cycle control signal, and the variable DC voltage source module is in response to the duty ratio
Control signal adjusts the duty ratio of the pwm pulse waveform in the variable DC voltage source module to generate the variable DC voltage
Pressure.
7. driver according to claim 4, which is characterized in that
The variable DC voltage is supplied to the drive control module by the variable DC voltage source module,
The drive control module is monitored the variable DC voltage and is supplied to the variable DC voltage described
Gate drive voltages of the IGBT as the IGBT.
8. a kind of driving method of the gate drive voltage of Serial regulation IGBT, which is characterized in that including：
Shutdown control signal generation power control signal is opened in response to the IGBT；
The variable DC voltage of linear change within a predetermined range is generated in response to the power control signal；And
The variable DC voltage is supplied to gate drive voltages of the IGBT as the IGBT.
9. driving method according to claim 8, which is characterized in that further include：
The power control signal is adjusted in the IGBT opening processes in response to the shutdown control signal of opening of the IGBT,
And it is linearly increased by the predetermined rate of rise in the preset range in response to the adjusted power control signal generation
The variable DC voltage；
The power control signal is adjusted in the IGBT turn off process in response to the shutdown control signal of opening of the IGBT,
And predetermined descending slope linear reduction is pressed in the preset range in response to the adjusted power control signal generation
The variable DC voltage.
10. driving method according to claim 8 or claim 9, which is characterized in that further include：
Detection and the relevant feedback informations of the IGBT；
The power control signal is adjusted in response to the feedback information；And
The variable DC voltage is generated in response to the adjusted power control signal.
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| CN112491252A (en) * | 2020-12-30 | 2021-03-12 | 深圳市永联科技股份有限公司 | Driving method and circuit for improving reliability of SIC MOSFET |
| US11606019B2 (en) | 2019-04-16 | 2023-03-14 | Huawei Digital Power Technologies Co., Ltd. | Control circuit, voltage source circuit, driving device, and driving method |
| CN116231593A (en) * | 2023-02-25 | 2023-06-06 | 广州锐速智能科技股份有限公司 | IGBT driving power supply protection method, system, equipment and medium |
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