CN109411183A - Double-spiral structure transformer and radio-frequency power amplifier - Google Patents

Double-spiral structure transformer and radio-frequency power amplifier Download PDF

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Publication number
CN109411183A
CN109411183A CN201811520560.4A CN201811520560A CN109411183A CN 109411183 A CN109411183 A CN 109411183A CN 201811520560 A CN201811520560 A CN 201811520560A CN 109411183 A CN109411183 A CN 109411183A
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China
Prior art keywords
metal layer
transformer
primary coil
secondary coil
metal
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CN201811520560.4A
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Chinese (zh)
Inventor
宣凯
龙华
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Lansus Technologies Inc
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Lansus Technologies Inc
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Priority to CN201811520560.4A priority Critical patent/CN109411183A/en
Publication of CN109411183A publication Critical patent/CN109411183A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00Fixed transformers or mutual inductances of the signal type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F19/00Fixed transformers or mutual inductances of the signal type
    • H01F19/04Transformers or mutual inductances suitable for handling frequencies considerably beyond the audio range
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/2804Printed windings
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00Details of transformers or inductances, in general
    • H01F27/28Coils; Windings; Conductive connections
    • H01F27/2804Printed windings
    • H01F2027/2809Printed windings on stacked layers

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

The present invention provides a kind of double-spiral structure transformer and radio-frequency power amplifier.The transformer is integrally in double-spiral structure, comprising: at least four layers of metal layer, every layer of metal layer have both ends;Dielectric layer, the dielectric layer are insulation board, are arranged between adjacent metal, through-hole is arranged in the dielectric layer;Wherein, part or all of odd number metal layer respectively holds each end of odd number metal layer adjacent thereto to pass sequentially through the through-hole connection, as primary coil, each end for respectively holding even metal layer adjacent thereto of part or all of even metal layer passes sequentially through the through-hole and is connected, as secondary coil.Technical solution provided in an embodiment of the present invention is high with power transmission efficiency, Insertion Loss is small, resonance is in the advantage that in working band, high-frequency harmonic has inhibited.

Description

Double-spiral transformer and radio frequency power amplifier
Technical Field
The invention relates to the technical field of transformers, in particular to a transformer with a double-spiral structure and a radio frequency power amplifier.
Background
With the rapid evolution of mobile communication technology, from 2G, 3G, 4G to 5G, the rf power amplifier plays an increasingly important role, which is an indelible link of the mobile communication terminal. Wherein G is short for generation, and 4G is short for fourth generation communication technology. The 4G system can download at the speed of 100Mbps, is 2000 times faster than the current dial-up networking, can also achieve the uploading speed of 20Mbps, and can meet the requirements of almost all users on wireless services.
In the rf power amplifier chip, the transformer coupling technology is widely used, and in both the low cost field of the 2G CMOS PA and the SiGe amplifier field, the transformer technology is used for single-end to differential and differential to single-end conversion, and simultaneously, the transformer technology plays a role of power coupling. Even in a 4G LTE HPUE (High Power User End) in a future 5G communication system, the requirement of a communication terminal on transmitting Power is greatly improved and is required to reach the level of Power Class2(26dBm), compared with the traditional Power Class3(23dBm), the Power requirement is doubled, and even if a gallium arsenide (GaAs) process is used, the requirements on Power and linearity are difficult to meet at the same time. At this point, a differential architecture employing transformer technology is a potential alternative. It can be seen that transformer technology has wide application in the application of radio frequency power amplifiers.
The conventional transformer mostly adopts a flat layer structure as shown in fig. 1, or a simple laminated structure as shown in fig. 2.
The flat layer structure of fig. 1 is simple in design and suitable for an integrated circuit process or a substrate process with a small number of metal layers, but since the distance between the metals on the same layer is limited by process rules, infinite proximity is impossible, and magnetic field leakage from the primary coil to the secondary coil is large, and fig. 6 is a comparison graph of coupling efficiency of the primary coil and the secondary coil of the conventional transformer structure. As shown in fig. 6, the flat-layer structure transformer has low coupling efficiency.
The stacked structure of fig. 2 can make the primary coil and the secondary coil closer, the magnetic field leakage is less, the coupling efficiency is higher, at 5GHz, the efficiency can reach 70%, compared with the 55% efficiency of the flat structure of fig. 1, the efficiency is obviously improved, but still a larger lifting space exists. Moreover, the simple flat layer or laminated structure has higher resonance frequency due to smaller parasitic inductance and capacitance, and the transmission efficiency is maximized at high frequency instead. As shown in fig. 6, the coupling efficiency of the stacked structure increases with the increase of the frequency, that is, the coupling efficiency does not reach the maximum in the normal fundamental wave (f0) operating frequency band, for example, below 6GHz, but the coupling efficiency is higher at the higher harmonics (2f0, 3f0, 4f0), and the unwanted harmonics are efficiently transmitted to the output terminal.
Disclosure of Invention
The embodiment of the invention provides a transformer with a double-spiral structure and a radio frequency power amplifier, and aims to solve the problems of low coupling efficiency and poor harmonic suppression of the traditional transformer structure.
The embodiment of the invention provides a transformer with a double-spiral structure, which is characterized in that the whole transformer is of a double-spiral structure and comprises: at least four metal layers, each metal layer having two ends; the dielectric layer is an insulating plate and is arranged between the adjacent metal layers, and the dielectric layer is provided with a through hole; each end of part or all of the odd metal layers is connected with each end of the adjacent odd metal layer through the through hole in sequence to be used as a primary coil; and each end of part or all of the even-numbered metal layers is connected with each end of the adjacent even-numbered metal layer through the through hole in sequence to be used as a secondary coil.
As an alternative of the present invention, the number of metal layers of the secondary coil is one more than that of the primary coil.
As an alternative of the present invention, the number of metal layers of the primary coil is one more than that of the secondary coil.
As an alternative of the present invention, the number of metal layers of the secondary coil is equal to the number of metal layers of the primary coil.
The embodiment of the invention also provides a radio frequency power amplifier, which is characterized by comprising the double-spiral transformer.
The technical scheme provided by the embodiment of the invention has the advantages of high power transmission efficiency, small insertion loss, resonance in a working frequency band and good high-frequency harmonic suppression.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a flat-layer structure provided in an embodiment of a conventional transformer structure;
FIG. 2 is a schematic diagram of a stacked structure provided in another embodiment of a conventional transformer structure;
fig. 3 is a schematic diagram illustrating a transformer with a double spiral structure according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of the primary coil of the transformer with double helix structure provided in the embodiment of FIG. 3;
FIG. 5 is a schematic diagram of the secondary winding of the transformer with double helix structure provided in the embodiment of FIG. 3;
FIG. 6 is a graph comparing coupling efficiency of primary and secondary windings of a conventional transformer structure;
fig. 7 is a graph illustrating a comparison of coupling efficiency between primary and secondary windings of different layers in a transformer with a double spiral structure according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, specific embodiments of the technical solutions of the present invention will be described in more detail and clearly with reference to the accompanying drawings and the embodiments. However, the specific embodiments and examples described below are for illustrative purposes only and are not limiting of the invention. It is intended that the present invention cover only some embodiments of the invention and not all embodiments of the invention, and that other embodiments obtained by various modifications of the invention by those skilled in the art are intended to be within the scope of the invention.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various elements or components, these elements or components should not be limited by these terms. These terms are only used to distinguish one element or component from another element or component. Thus, a first element or component discussed below could be termed a second element or component without departing from the scope of the present invention.
Fig. 3 is a schematic composition diagram of a transformer with a double-spiral structure according to an embodiment of the present invention, in which the transformer has a double-spiral structure as a whole, and includes at least four metal layers and dielectric layers.
At least four metal layers, each metal layer having two ends. And the dielectric layer is an insulating plate and is arranged between the adjacent metal layers, and the dielectric layer is provided with a through hole. Each end of part or all of the odd metal layers is connected with each end of the adjacent odd metal layer through the through holes in sequence to serve as a primary coil, and each end of part or all of the even metal layers is connected with each end of the adjacent even metal layer through the through holes in sequence to serve as a secondary coil.
The transformer is manufactured by connecting multiple layers of metal in an integrated circuit process or an advanced substrate process, and the primary coil and the secondary coil are realized by using multiple layers of metal. The dielectric layer includes a circuit board or substrate. The primary coil and the secondary coil are coupled according to the transformation ratio of the transformer. The self-resonance frequency of the primary coil and the secondary coil is less than or equal to 6 GHz.
Fig. 4 is a schematic diagram illustrating the composition of the primary coil of the transformer with a double helix structure provided in the embodiment of fig. 3. Fig. 5 is a schematic diagram of the secondary coil of the transformer with double helix structure provided in the embodiment of fig. 3.
As shown in fig. 4 and 5, the number of metal layers of the secondary coil is one more than that of the primary coil. The metal layer of the secondary coil wraps the metal layer number of the primary coil.
As shown in fig. 3, the transformer includes eight metal layers.
In this embodiment, the third metal layer, the fifth metal layer and the seventh metal layer may be connected to form the primary coil, wherein one end of the third metal layer is connected to one end of the fifth metal layer through a via, the other end of the fifth metal layer is connected to one end of the seventh metal layer through a via, and then the other end of the third metal layer and the other end of the seventh metal layer are used as taps of the primary coil. Connecting the second metal layer, the fourth metal layer, the sixth metal layer and the eighth metal layer into a secondary coil, wherein one end of the second metal layer is connected with one end of the fourth metal layer through a through hole, the other end of the fourth metal layer is connected with one end of the sixth metal layer through a through hole, the other end of the sixth metal layer is connected with one end of the eighth metal layer through a through hole, and the other end of the second metal layer and the other end of the eighth metal layer are taken as a tap of the secondary coil. The metal layer of the secondary coil wraps the metal layer number of the primary coil. The metal layer may be annular or polygonal or circular.
In this embodiment, the fifth metal layer and the seventh metal layer may be connected to form a primary coil, and the fourth metal layer, the sixth metal layer and the eighth metal layer may be connected to form a secondary coil. The metal layer of the secondary coil wraps the metal layer number of the primary coil. The metal layer may be annular or polygonal or circular.
In this embodiment, the seventh metal layer may be connected to form a primary coil, and the sixth metal layer and the eighth metal layer may be connected to form a secondary coil. The metal layer of the secondary coil wraps the metal layer number of the primary coil. The metal layer may be annular or polygonal or circular.
As an alternative, the number of metal layers of the primary coil may be one more layer than the number of metal layers of the secondary coil. The metal layer of the primary coil wraps the metal layer of the secondary coil.
As shown in fig. 3, the transformer includes eight metal layers.
The first metal layer, the third metal layer, the fifth metal layer and the seventh metal layer can be connected to form a primary coil, wherein one end of the first metal layer is connected with one end of the third metal layer through a through hole, the other end of the third metal layer is connected with one end of the fifth metal layer through a through hole, the other end of the fifth metal layer is connected with one end of the seventh metal layer through a through hole, and the other end of the first metal layer and the other end of the seventh metal layer are taken as a tap of the primary coil. And connecting the second metal layer, the fourth metal layer and the sixth metal layer into a secondary coil, wherein one end of the second metal layer is connected with one end of the fourth metal layer through a through hole, the other end of the fourth metal layer is connected with one end of the sixth metal layer through a through hole, and the other end of the second metal layer and the other end of the sixth metal layer are taken as a tap of the secondary coil. The metal layer of the primary coil wraps the metal layer of the secondary coil. The metal layer may be annular or polygonal or circular.
The third metal layer, the fifth metal layer, and the seventh metal layer may be connected to form a primary coil, and the fourth metal layer and the sixth metal layer may be connected to form a secondary coil. The metal layer of the primary coil wraps the metal layer of the secondary coil. The metal layer may be annular or polygonal or circular.
The fifth metal layer and the seventh metal layer may be connected to form a primary coil, and the sixth metal layer may be connected to form a secondary coil. The metal layer of the primary coil wraps the metal layer of the secondary coil. The metal layer may be annular or polygonal or circular.
Alternatively, the number of metal layers of the secondary coil may be equal to the number of metal layers of the primary coil.
In this embodiment, the first metal layer, the third metal layer, the fifth metal layer, and the seventh metal layer may be connected as a primary coil, and the second metal layer, the fourth metal layer, the sixth metal layer, and the eighth metal layer may be connected as a secondary coil. The metal layer may be annular or polygonal.
In this embodiment, the third metal layer, the fifth metal layer, and the seventh metal layer may be connected as a primary coil, and the fourth metal layer, the sixth metal layer, and the eighth metal layer may be connected as a secondary coil. The metal layer may be annular or polygonal.
In this embodiment, the fifth metal layer and the seventh metal layer may be connected to form a primary coil, and the sixth metal layer and the eighth metal layer may be connected to form a secondary coil. The metal layer may be annular or polygonal.
The double-spiral structure transformers formed by different connection modes of the primary coil and the secondary coil have different coupling efficiency.
Fig. 7 is a graph illustrating a comparison of coupling efficiency between primary and secondary windings of different layers in a transformer with a double spiral structure according to an embodiment of the present invention.
Besides high coupling coefficient and transmission efficiency, the double-helix coupling structure with the crossed and laminated layers has the advantages of large parasitic capacitance and low self-resonant frequency of the transformer, and the transmission efficiency at the working frequency can be designed to be maximum through precise design. Throughout the present civilian communication market, most communication systems operate below 6GHz, for example: 850/900/1850/1900MHz for GSM; TDD-LTE: 1900/2010/2400/2600 MHz; WiFi: 2.4GHz/5.8 GHz; 5G NR: 3.5GHz/4.8GHz, etc. Therefore, it is one of the design goals to reduce the self-resonant frequency of the coupling coil below 6 GHz.
As shown in fig. 7, in the double-spiral transformer of curve 1, the third metal layer, the fifth metal layer, and the seventh metal layer are connected to form a primary coil, and the second metal layer, the fourth metal layer, the sixth metal layer, and the eighth metal layer are connected to form a secondary coil. In the double-spiral transformer of curve 2, the third metal layer, the fifth metal layer and the seventh metal layer are connected to form a primary coil, and the fourth metal layer, the sixth metal layer and the eighth metal layer are connected to form a secondary coil. In the double-spiral transformer of curve 3, the fifth metal layer and the seventh metal layer are connected to form a primary coil, and the sixth metal layer and the eighth metal layer are connected to form a secondary coil. In the double-spiral transformer of curve 4, the seventh metal layer is connected to form a primary coil, and the eighth metal layer is connected to form a secondary coil.
The coupling efficiency of the curves 1 and 2 is highest, the coupling efficiency of the curve 3 is centered, and the coupling efficiency of the curve 4 is lowest below the normal fundamental wave (f0) operating frequency band of 6 GHz. The primary and secondary coil connection structure of curve 4 is close to the laminated structure. Therefore, in the working frequency band, the double-helix transformer provided by the embodiment of the invention has the advantages of high coupling efficiency, high power transmission efficiency, small insertion loss, resonance in the working frequency band and good high-frequency harmonic suppression.
A radio frequency power amplifier comprises the double-spiral transformer. Transformer technology is used in rf power amplifiers for single-to-differential and differential-to-single-ended conversion, while assuming the function of power coupling. The radio frequency power amplifier has high power transmission efficiency, small insertion loss, resonance in a working frequency band and good high-frequency harmonic suppression.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.

Claims (11)

1. The utility model provides a double helix structure transformer, its characterized in that, the transformer wholly is double helix structure, includes:
at least four metal layers, each metal layer having two ends;
the dielectric layer is an insulating plate and is arranged between the adjacent metal layers, and the dielectric layer is provided with a through hole; wherein,
each end of part or all of the odd metal layers is connected with each end of the adjacent odd metal layer through the through hole in sequence to be used as a primary coil; and each end of part or all of the even-numbered metal layers is connected with each end of the adjacent even-numbered metal layer through the through hole in sequence to be used as a secondary coil.
2. The transformer of claim 1, wherein the transformer is fabricated by using multi-layer metal connection features of an integrated circuit process or an advanced substrate process, and the dielectric layer comprises a circuit board or a substrate.
3. The transformer of claim 1, wherein the primary coil and the secondary coil are coupled according to a transformation ratio of the transformer.
4. The transformer of claim 1, wherein the self-resonant frequency of the primary coil and the secondary coil is less than or equal to 6 GHz.
5. The transformer of claim 1, wherein the secondary coil has one more metal layer than the primary coil.
6. The double helix transformer according to claim 5, wherein the metal layer of the secondary winding encapsulates the number of metal layers of the primary winding.
7. The transformer of claim 1, wherein the primary coil has one more metal layer than the secondary coil.
8. The double helix transformer according to claim 7, wherein the metal layer of the primary coil encases the number of metal layers of the secondary coil.
9. The transformer of claim 1, wherein the number of metal layers of the secondary coil is equal to the number of metal layers of the primary coil.
10. The double helix structure transformer according to claim 1, wherein the metal layer is annular or polygonal or circular.
11. A radio frequency power amplifier comprising the double spiral transformer of any one of claims 1 to 10.
CN201811520560.4A 2018-12-12 2018-12-12 Double-spiral structure transformer and radio-frequency power amplifier Pending CN109411183A (en)

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CN113517111A (en) * 2021-07-30 2021-10-19 天津环鑫科技发展有限公司 On-chip transformer and manufacturing process thereof

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Application publication date: 20190301