CN109396586B - Brazing method for epoxy resin device and PCB (printed circuit board) base material - Google Patents
Brazing method for epoxy resin device and PCB (printed circuit board) base material Download PDFInfo
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- CN109396586B CN109396586B CN201811526959.3A CN201811526959A CN109396586B CN 109396586 B CN109396586 B CN 109396586B CN 201811526959 A CN201811526959 A CN 201811526959A CN 109396586 B CN109396586 B CN 109396586B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/008—Soldering within a furnace
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
- B23K1/206—Cleaning
Abstract
A method for brazing an epoxy resin device and a PCB base material comprises the following specific steps: firstly, cleaning an epoxy resin device by using ultrasonic waves, removing oil stains adhered to the surface of the epoxy resin device, then sputtering an Ag thin film layer with the thickness of 200-300 nm, a Cu thin film layer with the thickness of 180-210 nm, a Sn thin film layer with the thickness of 4000-4500 nm and a Ti thin film layer with the thickness of 100-200 nm on the surface of the cleaned epoxy resin device in sequence by using plasma magnetron sputtering coating equipment to obtain the epoxy resin device plated with a multi-layer metal film layer, then coating a liquid soldering flux on the surface of the metal film layer of the epoxy resin device by using a brush, and soldering the epoxy resin device plated with the Ag, Cu, Sn and Ti metal film layer on a PCB (printed circuit board) base material by using a vacuum black body heating furnace; according to the invention, the epoxy resin device is coated with the film and then brazed on the PCB substrate, so that the defects that the thickness of a brazing coating of the brazing filler metal is difficult to control, impurities are easy to mix in the coating process, pores are easy to generate after brazing, and the bonding force is small are overcome.
Description
Technical Field
The invention relates to the field of brazing, in particular to a brazing method of an epoxy resin device and a PCB base material.
Background
The epoxy resin is a general term of resin containing more than two epoxy groups, has the characteristics of compact molecular structure, strong cohesive force, low viscosity, high strength, high elastic modulus, high elongation, high thermal stability and the like in structural view, and has higher mechanical property than general thermosetting resins such as phenolic resin, unsaturated polyester and the like. The electronic device prepared by the epoxy resin material has the following advantages: the adhesive has strong adhesion, small curing shrinkage, good electrical insulation and chemical corrosion resistance, so that the adhesive is widely used for encapsulating and insulating devices provided with electronic components and circuits.
At present, the epoxy resin material and the PCB (printed circuit board) substrate are connected by gluing, hot gas welding or soldering, and the like, and the methods have many defects: when the gluing method is adopted, in order to enhance the binding force, the procedure of polishing the surface of the epoxy resin material is often needed to be added, so that the labor cost is increased; the hot gas welding mode can easily realize the connection of thermoplastic materials, but the epoxy resin is a thermosetting substance, so the surface of the epoxy resin is easily damaged by the hot gas welding mode, and the bonding force is small; by adopting a brazing mode, a eutectic point 217 ℃ of Sn3.5Ag0.9Cu solder is adopted, a Sn3.5Ag0.9Cu solder sheet or a powder brazing epoxy resin device can be used, but the thickness of a powder brazing coating is difficult to control, impurities are mixed in the coating process, pores are generated after brazing, and Zhoulong adopts a solder sheet with the thickness of 20 mu mSn3.5Ag0.5Cu to carry out electronic packaging in a research paper of heat management and failure analysis of semiconductor lighting packaging, but for thin sheets smaller than 20 mu m, the preparation process is difficult, and the brazing difficulty is increased; therefore, the realization of the connection method of the epoxy resin device with good precision control and large binding force is a problem to be solved urgently.
Disclosure of Invention
The invention aims to solve the technical problems, and provides a brazing method of an epoxy resin device and a PCB base material, which overcomes the defects that the thickness of a brazing coating of a brazing filler metal is difficult to control, impurities are mixed in the coating process, pores are generated after brazing, and the bonding force is small.
The technical scheme adopted by the invention for solving the defects of the technical problems is as follows: a method for brazing an epoxy resin device and a PCB base material comprises the following specific steps:
(1) cleaning an epoxy resin device by adopting ultrasonic waves to remove oil stains adhered to the surface;
(2) sputtering Ag, Cu, Sn and Ti film layers on the surface of the cleaned epoxy resin device in sequence by adopting plasma magnetron sputtering coating equipment, wherein the thicknesses of the Ag, Cu, Sn and Ti film layers are respectively 200-300 nm, 180-210 nm, 4000-4500 nm and 100-200 nm, so as to obtain the epoxy resin device plated with the multi-layer metal film layer;
(3) coating liquid brazing flux on the surface of a metal film layer of an epoxy resin device by using a brush;
(4) and brazing the epoxy resin device plated with the Ag, Cu, Sn and Ti metal film layer to the base material of the PCB by adopting a vacuum black body heating furnace.
Furthermore, the thermal expansion coefficient of the epoxy resin device is 56.81E-6/K, and the melting point is 230 ℃.
Further, in the step (1), the cleaning process is as follows: and (3) placing the epoxy resin device into an acetone solution to ultrasonically clean for 5-10 min at the ultrasonic temperature of 40-60 ℃.
Further, in the step (2), the coating process is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 100-250W, the air pressure is 0.4-0.6 Pa, the coating speed is 30-60 nm/min, and the coating time of Ag, Cu, Sn and Ti is 3-5 min, 2-5 min, 70-90 min and 3-5 min respectively.
Further, in the step (3), the used liquid brazing flux is 102 brazing flux, and the used raw materials are as follows by mass: the preparation method comprises the following steps of uniformly mixing 88-95% of mixed propanol, 1-2% of gelatin, 1-5% of triethanolamine soap and 1-5% of organic phosphonic acid in a beaker, sealing and storing in a dry environment for later use.
Further, in the step (4), the brazing filler metal used is Sn3.5Ag0.9Cu, the brazing temperature is 200-220 ℃, and the heat preservation time is 10-20 min.
Furthermore, in the process of Sn coating, the direct current power is 100-120W, so that the tin target material is prevented from being heated to generate tin spherical liquid drops on the surface of the target material in the high-power coating process.
The invention has the beneficial effects that:
the brazing method can realize the accurate control of a 2-5 mu m brazing interface layer, has few brazing defects and strong binding force: firstly, a magnetron sputtering mode is adopted to gradually sputter Ag, Cu, Sn and Ti layers on the surface layer of an epoxy resin device, so that the metallization layer of the epoxy resin device can be controlled to be about 5 mu m, the film uniformity is +/-5%, no air holes are generated during brazing, the bonding force is large, the technical stability is high, and the industrial production can be met; secondly, the first film layer is made of Ag material, mainly because the melting point of Ag is 960 ℃, the thermal expansion coefficient is 191E-6/K, the thermal expansion coefficient of the epoxy resin material is 56.81E-6/K, the melting point is 230 ℃, compared with other metals, the thermal expansion coefficient is closer to that of the epoxy resin material, and the film has good brazing performance, strong wettability and good fluidity; the second film layer adopts a Cu material, and the AgCu brazing filler metal has higher controllability and can increase the brazing bonding force, so that AgCu films are mutually diffused to form a mixed film layer with the thickness of 100 nm; the third film layer adopts Sn material, the Sn material has good mechanical property, the melting point is 230 ℃, the melting point is similar to that of the epoxy resin material, and the solder selection of the brazing is met; the fourth film layer of the invention adopts Ti material, and the Ti material can generate TiC interface compound with C in resin, thus increasing the binding force.
Detailed Description
The invention is further illustrated with reference to specific examples.
Example 1
The brazing method of the epoxy resin device and the PCB base material can realize the accurate control of a 2-5 mu m brazing interface layer, has few brazing defects and strong binding force, and comprises the following specific steps:
(1) taking an epoxy resin device with the thermal expansion coefficient of 56.81E-6/K and the melting point of 230 ℃, and cleaning the epoxy resin device by adopting ultrasonic waves to remove oil stains adhered to the surface; the cleaning process comprises the following steps: placing the epoxy resin device into an acetone solution to ultrasonically clean for 5min at the ultrasonic temperature of 60 ℃;
(2) by adopting plasma magnetron sputtering coating equipment, the surfaces of the cleaned epoxy resin devices are sequentially sputtered with Ag, Cu, Sn and Ti film layers, the metallization layers of the epoxy resin devices can be controlled to be about 5 mu m, the uniformity of the films is +/-5%, no air holes are formed during brazing, the bonding force is large, the technical stability is high, and the industrial production can be met:
firstly plating an Ag metal film layer on the surface of an epoxy resin device, mainly because the melting point of Ag is 960 ℃, the thermal expansion coefficient is 191E-6/K, the thermal expansion coefficient of an epoxy resin material is 56.81E-6/K, the melting point is 230 ℃, compared with other metals, the thermal expansion coefficient is closer to that of the epoxy resin material, the Ag metal film layer has good brazing performance, strong wetting quality and good fluidity, and the plating process of the Ag metal film layer is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 250W, the air pressure is 0.6Pa, the coating speed is 60nm/min, the coating time is 5min, and the thickness of the Ag thin film layer is 300 nm;
and then plate Cu metal membranous layer outside Ag metal membranous layer, AgCu series brazing filler metal has great controllability, can increase the binding force brazed, make AgCu film interdiffuse, form the mixed membranous layer of 100nm thickness, the coating film process of Cu metal membranous layer is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 250W, the air pressure is 0.6Pa, the coating speed is 60nm/min, the coating time is 3.5min, and the thickness of the Cu thin film layer is 210 nm;
and then plating a Sn metal film layer outside the Cu metal film layer, wherein the Sn material has good mechanical property and a melting point of 230 ℃, and is close to the melting point of the epoxy resin material, so that the brazing flux selection is met, and the plating process of the Sn metal film layer is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 100W, the tin target material is prevented from being heated in the high-power coating process, tin ball-shaped liquid drops are generated on the surface of the target material, the air pressure is 0.6Pa, the coating speed is 50nm/min, the coating time is 90min, and the thickness of the Sn film layer is 4500 nm;
and finally, plating a Ti metal film layer outside the Sn metal film layer, wherein a TiC interface compound can be generated between the Ti material and C in the resin, so that the bonding force is increased, and the Ti metal film layer is plated by the following process: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 250W, the air pressure is 0.6Pa, the coating speed is 30nm/min, the coating time is 5min, and the thickness of the Sn film layer is 150nm, so that the epoxy resin device coated with Ag, Cu, Sn and Ti metal film layers with the thickness of 5160nm can be obtained;
(3) the liquid 102 brazing flux is coated on the surface of the metal film layer of the epoxy resin device by adopting the brush, so that the influence of impurities such as surface water vapor, dust and the like on a brazing interface can be reduced, and the brazing defects such as air holes and the like are reduced; 102 the flux comprises the following raw materials in percentage by mass: mixing the raw materials uniformly in a beaker with 88% mixed propanol, 1% gelatin, 1% triethanolamine soap and 1% organic phosphonic acid, sealing and storing in a dry environment for later use;
(4) and (3) soldering the epoxy resin device plated with the Ag, Cu, Sn and Ti metal film layer to the PCB base material by adopting a vacuum black body heating furnace, wherein the solder used is Sn3.5Ag0.9Cu, the soldering temperature is 220 ℃, and the heat preservation time is 20 min.
Example 2
The brazing method of the epoxy resin device and the PCB base material can realize the accurate control of a 2-5 mu m brazing interface layer, has few brazing defects and strong binding force, and comprises the following specific steps:
(1) taking an epoxy resin device with the thermal expansion coefficient of 56.81E-6/K and the melting point of 230 ℃, and cleaning the epoxy resin device by adopting ultrasonic waves to remove oil stains adhered to the surface; the cleaning process comprises the following steps: under the condition that the ultrasonic temperature is 50 ℃, putting the epoxy resin device into an acetone solution for ultrasonic cleaning for 6 min;
(2) by adopting plasma magnetron sputtering coating equipment, the surfaces of the cleaned epoxy resin devices are sequentially sputtered with Ag, Cu, Sn and Ti film layers, the metallization layers of the epoxy resin devices can be controlled to be about 5 mu m, the uniformity of the films is +/-5%, no air holes are formed during brazing, the bonding force is large, the technical stability is high, and the industrial production can be met:
firstly plating an Ag metal film layer on the surface of an epoxy resin device, mainly because the melting point of Ag is 960 ℃, the thermal expansion coefficient is 191E-6/K, the thermal expansion coefficient of an epoxy resin material is 56.81E-6/K, the melting point is 230 ℃, compared with other metals, the thermal expansion coefficient is closer to that of the epoxy resin material, the Ag metal film layer has good brazing performance, strong wetting quality and good fluidity, and the plating process of the Ag metal film layer is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 230W, the air pressure is 0.5Pa, the coating speed is 56nm/min, the coating time is 5min, and the thickness of the Ag thin film layer is 280 nm;
and then plate Cu metal membranous layer outside Ag metal membranous layer, AgCu series brazing filler metal has great controllability, can increase the binding force brazed, make AgCu film interdiffuse, form the mixed membranous layer of 100nm thickness, the coating film process of Cu metal membranous layer is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 230W, the air pressure is 0.5Pa, the coating speed is 40nm/min, the coating time is 5min, and the thickness of the Cu thin film layer is 200 nm;
and then plating a Sn metal film layer outside the Cu metal film layer, wherein the Sn material has good mechanical property and a melting point of 230 ℃, and is close to the melting point of the epoxy resin material, so that the brazing flux selection is met, and the plating process of the Sn metal film layer is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 120W, the tin target material is prevented from being heated to generate tin spherical liquid drops on the surface of the target material in the high-power coating process, the air pressure is 0.5Pa, the coating speed is 60nm/min, the coating time is 70min, and the thickness of the Sn film layer is 4200 nm;
and finally, plating a Ti metal film layer outside the Sn metal film layer, wherein a TiC interface compound can be generated between the Ti material and C in the resin, so that the bonding force is increased, and the Ti metal film layer is plated by the following process: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 230W, the air pressure is 0.5Pa, the coating speed is 30nm/min, the coating time is 4min, and the thickness of the Sn film layer is 120nm, so that the epoxy resin device coated with the Ag, Cu, Sn and Ti metal film layer with the thickness of 4800nm can be obtained;
(3) the liquid 102 brazing flux is coated on the surface of the metal film layer of the epoxy resin device by adopting the brush, so that the influence of impurities such as surface water vapor, dust and the like on a brazing interface can be reduced, and the brazing defects such as air holes and the like are reduced; 102, the flux uses the following raw materials by mass: mixing 91% mixed propanol, 1.5% gelatin, 3% triethanolamine soap and 3% organic phosphonic acid, mixing the above materials in a beaker, sealing and storing in dry environment;
(4) and (3) soldering the epoxy resin device plated with the Ag, Cu, Sn and Ti metal film layer to the PCB base material by adopting a vacuum black body heating furnace, wherein the solder used is Sn3.5Ag0.9Cu, the soldering temperature is 220 ℃, and the heat preservation time is 15 min.
Example 3
The brazing method of the epoxy resin device and the PCB base material can realize the accurate control of a 2-5 mu m brazing interface layer, has few brazing defects and strong binding force, and comprises the following specific steps:
(1) taking an epoxy resin device with the thermal expansion coefficient of 56.81E-6/K and the melting point of 230 ℃, and cleaning the epoxy resin device by adopting ultrasonic waves to remove oil stains adhered to the surface; the cleaning process comprises the following steps: under the condition that the ultrasonic temperature is 40 ℃, putting the epoxy resin device into an acetone solution for ultrasonic cleaning for 8 min;
(2) by adopting plasma magnetron sputtering coating equipment, the surfaces of the cleaned epoxy resin devices are sequentially sputtered with Ag, Cu, Sn and Ti film layers, the metallization layers of the epoxy resin devices can be controlled to be about 5 mu m, the uniformity of the films is +/-5%, no air holes are formed during brazing, the bonding force is large, the technical stability is high, and the industrial production can be met:
firstly plating an Ag metal film layer on the surface of an epoxy resin device, mainly because the melting point of Ag is 960 ℃, the thermal expansion coefficient is 191E-6/K, the thermal expansion coefficient of an epoxy resin material is 56.81E-6/K, the melting point is 230 ℃, compared with other metals, the thermal expansion coefficient is closer to that of the epoxy resin material, the Ag metal film layer has good brazing performance, strong wetting quality and good fluidity, and the plating process of the Ag metal film layer is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 220W, the air pressure is 0.55Pa, the coating speed is 52nm/min, the coating time is 5min, and the thickness of the Ag thin film layer is 260 nm;
and then plate Cu metal membranous layer outside Ag metal membranous layer, AgCu series brazing filler metal has great controllability, can increase the binding force brazed, make AgCu film interdiffuse, form the mixed membranous layer of 100nm thickness, the coating film process of Cu metal membranous layer is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 220W, the air pressure is 0.55Pa, the coating speed is 60nm/min, the coating time is 3min, and the thickness of the Cu thin film layer is 180 nm;
and then plating a Sn metal film layer outside the Cu metal film layer, wherein the Sn material has good mechanical property and a melting point of 230 ℃, and is close to the melting point of the epoxy resin material, so that the brazing flux selection is met, and the plating process of the Sn metal film layer is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 120W, the tin target material is prevented from being heated to generate tin spherical liquid drops on the surface of the target material in the high-power coating process, the air pressure is 0.55Pa, the coating speed is 60nm/min, the coating time is 70min, and the thickness of the Sn film layer is 4200 nm;
and finally, plating a Ti metal film layer outside the Sn metal film layer, wherein a TiC interface compound can be generated between the Ti material and C in the resin, so that the bonding force is increased, and the Ti metal film layer is plated by the following process: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 220W, the air pressure is 0.55Pa, the coating speed is 40nm/min, the coating time is 4min, and the thickness of the Sn film layer is 160nm, so that the 4800nm epoxy resin device plated with Ag, Cu, Sn and Ti metal film layers can be obtained;
(3) the liquid 102 brazing flux is coated on the surface of the metal film layer of the epoxy resin device by adopting the brush, so that the influence of impurities such as surface water vapor, dust and the like on a brazing interface can be reduced, and the brazing defects such as air holes and the like are reduced; 102, the flux uses the following raw materials by mass: uniformly mixing the raw materials of 95% mixed propanol, 2% gelatin, 5% triethanolamine soap and 5% organic phosphonic acid in a beaker, sealing and storing in a dry environment for later use;
(4) and (3) soldering the epoxy resin device plated with the Ag, Cu, Sn and Ti metal film layer to the PCB base material by adopting a vacuum black body heating furnace, wherein the solder used is Sn3.5Ag0.9Cu, the soldering temperature is 200 ℃, and the heat preservation time is 20 min.
According to GB11363-89 'method for testing strength of soldered joint', a comparative test experiment is carried out on a common powder soldering sample and a magnetron sputtering coating sample, and the result is shown in Table 1, so that the soldering strength of the solder prepared by adopting a magnetron sputtering mode is higher than that of the common powder soldering solder.
TABLE 1 braze shear results for inventive and conventional powder braze samples
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1. A brazing method of an epoxy resin device and a PCB base material is characterized by comprising the following specific steps:
(1) cleaning an epoxy resin device by adopting ultrasonic waves to remove oil stains adhered to the surface;
(2) sputtering Ag, Cu, Sn and Ti film layers on the surface of the cleaned epoxy resin device in sequence by adopting plasma magnetron sputtering coating equipment, wherein the thicknesses of the Ag, Cu, Sn and Ti film layers are respectively 200-300 nm, 180-210 nm, 4000-4500 nm and 100-200 nm, so as to obtain the epoxy resin device plated with the multi-layer metal film layer;
(3) coating liquid brazing flux on the surface of a metal film layer of an epoxy resin device by using a brush;
(4) and brazing the epoxy resin device plated with the Ag, Cu, Sn and Ti metal film layer to the base material of the PCB by adopting a vacuum black body heating furnace.
2. The method for brazing the epoxy resin device and the PCB base material as recited in claim 1, wherein the epoxy resin device has a thermal expansion coefficient of 56.81E-6/K and a melting point of 230 ℃.
3. The method for brazing the epoxy resin device and the base material of the PCB as claimed in claim 1, wherein in the step (1), the cleaning process comprises the following steps: and (3) placing the epoxy resin device into an acetone solution to ultrasonically clean for 5-10 min at the ultrasonic temperature of 40-60 ℃.
4. The method for brazing the epoxy resin device and the PCB base material as claimed in claim 1, wherein in the step (2), the coating process is as follows: the plasma magnetron sputtering coating equipment adopts a 4-target direct current mode, the direct current power is 100-250W, the air pressure is 0.4-0.6 Pa, the coating speed is 30-60 nm/min, and the coating time of Ag, Cu, Sn and Ti is 3-5 min, 2-5 min, 70-90 min and 3-5 min respectively.
5. The method for brazing the epoxy resin device and the PCB base material according to claim 1, wherein in the step (3), the liquid brazing flux used is 102 brazing flux, and the raw materials used in the mass ratio are as follows: the preparation method comprises the following steps of uniformly mixing 88-95% of mixed propanol, 1-2% of gelatin, 1-5% of triethanolamine soap and 1-5% of organic phosphonic acid in a beaker, sealing and storing in a dry environment for later use.
6. The method for soldering the epoxy resin device and the PCB base material as claimed in claim 1, wherein in the step (4), the solder used is Sn3.5Ag0.9Cu, the soldering temperature is 200-220 ℃, and the holding time is 10-20 min.
7. The method for brazing the epoxy resin device and the PCB base material as claimed in claim 4, wherein the DC power is 100-120W during the Sn coating process, so as to avoid tin target material being heated to generate tin spherical liquid drops on the surface of the target material during the high-power coating process.
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| CN104125722A (en) * | 2014-08-12 | 2014-10-29 | 上海航天电子通讯设备研究所 | Welding process and welding mechanism for microwave substrate and housing |
| CN107079595A (en) * | 2014-09-03 | 2017-08-18 | 大陆泰密克微电子有限责任公司 | Method for the control unit device of motor vehicle and for manufacturing this device |
| CN105529277A (en) * | 2014-10-20 | 2016-04-27 | 英飞凌科技股份有限公司 | Method for Soldering a Circuit Carrier to a Carrier Plate |
| JP2016181600A (en) * | 2015-03-24 | 2016-10-13 | 株式会社タムラ製作所 | Method for bonding electronic component, solder composition used therein, and pretreatment agent |
| CN108568613A (en) * | 2017-03-07 | 2018-09-25 | 松下知识产权经营株式会社 | Solder alloy and bonded structure |
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