CN109390230B - Manufacturing method of groove type Schottky front silver surface metal structure - Google Patents
Manufacturing method of groove type Schottky front silver surface metal structure Download PDFInfo
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- CN109390230B CN109390230B CN201710669359.1A CN201710669359A CN109390230B CN 109390230 B CN109390230 B CN 109390230B CN 201710669359 A CN201710669359 A CN 201710669359A CN 109390230 B CN109390230 B CN 109390230B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 164
- 239000002184 metal Substances 0.000 title claims abstract description 164
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 11
- 239000004332 silver Substances 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000005530 etching Methods 0.000 claims abstract description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 21
- 238000001259 photo etching Methods 0.000 claims abstract description 19
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 14
- 238000005036 potential barrier Methods 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- QQMBHAVGDGCSGY-UHFFFAOYSA-N [Ti].[Ni].[Ag] Chemical group [Ti].[Ni].[Ag] QQMBHAVGDGCSGY-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 7
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 claims description 6
- 239000010956 nickel silver Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- -1 aluminum-silicon-copper Chemical compound 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract description 50
- 230000008569 process Effects 0.000 abstract description 11
- 230000007797 corrosion Effects 0.000 abstract description 10
- 238000005260 corrosion Methods 0.000 abstract description 10
- 239000002344 surface layer Substances 0.000 abstract description 3
- 229910005544 NiAg Inorganic materials 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Abstract
The invention discloses a manufacturing method of a groove type Schottky front silver surface metal structure, which comprises the following steps: a. performing first photoetching on a metal layer of the Schottky device: gluing, exposing and developing; b. etching the metal for the first time, etching part of the metal in the metal layer, and removing photoresist; c. and (3) second photoetching: gluing, exposing and developing to protect the corroded part of metal; d. and etching the metal for the second time, etching the residual metal in the metal layer, and removing the photoresist. The method of twice photoetching and twice corroding of the multilayer metal film is adopted, so that the metal corrosion appearance is stable, the phenomena of edge warping and falling are not easy to occur when the metal surface layer is subjected to tensile force, and the reliability of the product is improved; meanwhile, the process is compatible with the conventional process, special equipment is not needed, new photoresist is not needed, and the manufacturing cost is effectively reduced.
Description
Technical Field
The invention relates to a front silver surface metal process, in particular to a manufacturing method of a groove type Schottky front silver surface metal structure.
Background
Schottky barrier diodes have been used for decades in power applications as rectifying devices. Compared with a PN junction diode, the Schottky barrier diode has the advantages of low forward turn-on voltage and high switching speed, so that the Schottky barrier diode is very suitable for being applied to a switching power supply and high-frequency occasions.
Schottky barrier diodes are manufactured using the metal-semiconductor junction principle of metal-to-semiconductor contact formation. The groove type Schottky adopts the principle that a groove structure generates a depletion layer to pinch off a conductive channel, and the high-frequency characteristic and the electrical property of the groove type Schottky are obviously superior to those of a plane Schottky. The trench schottky barrier is currently mainly manufactured by the following method: firstly, a lift off process is utilized to carry out photoetching for three times, then metal evaporation or sputtering is carried out on the surface of a photoresist, and a film pasting and uncovering method is adopted to strip the metal on the photoresist, so that the process cost is high, a special photoresist is needed, and the problems of metal residue and the like easily occur when the film uncovering and metal uncovering are carried out; secondly, the metal surface is subjected to one-time photoetching and then etched, the etched appearance is unstable, and the phenomena of over-etching and metal residue are easy to occur.
The following problems arise in the practical fabrication of trench schottky barriers: 1. due to the existence of the grooves and the stress action among all the metal films, the warping degree of the wafer is overlarge, and the processing difficulty is large; 2. the composite metal film has high corrosion difficulty, and is easy to generate over-etching and metal residue, and the corrosion appearance is easy to generate an inverted triangle phenomenon as shown in figure 1, so that the adhesion among the metal films and the product reliability are directly influenced.
Disclosure of Invention
In order to solve the technical problem, the invention provides a manufacturing method of a groove type schottky front silver surface metal structure.
The invention provides a manufacturing method of a groove type Schottky front silver surface metal structure, which comprises the following steps:
a. performing first photoetching on a metal layer of the Schottky device: gluing, exposing and developing;
b. etching the metal for the first time, etching part of the metal in the metal layer, and removing photoresist;
c. and (3) second photoetching: gluing, exposing and developing to protect the corroded part of metal;
d. and etching the metal for the second time, etching the residual metal in the metal layer, and removing the photoresist.
In the above technical solution, preferably, the first etching metal is wet etching, and the second etching metal is dry etching or wet etching.
In the above technical solution, preferably, the forming of the metal layer of the schottky device includes the following steps:
s1, forming a potential barrier metal layer on a silicon wafer to form a silicon wafer-potential barrier metal structure;
s2, carrying out first heat treatment on the silicon wafer-potential barrier metal structure;
s3, forming a first metal layer on the barrier metal layer to form a silicon wafer-barrier metal-first metal layer structure;
s4, carrying out secondary heat treatment on the silicon wafer-potential barrier metal-first metal layer structure;
and S5, depositing a second metal layer on the first metal layer to form a silicon wafer-barrier metal-first metal layer-second metal layer structure.
In the above technical solution, preferably, the barrier metal layer is titanium metal, the first metal layer is any one or any combination of aluminum, aluminum-silicon alloy and aluminum-silicon-copper alloy, and the second metal layer is titanium-nickel-silver metal in sequence from bottom to top.
In the foregoing technical solution, preferably, the partial metal is the nickel silver metal, and the remaining metal is the barrier metal, the metal of the first metal layer, and the titanium metal in the second metal layer.
In the above technical solution, preferably, the thickness of the barrier metal layer is set to
The first metal layer has a thickness of
The thickness of the titanium-nickel-silver metal is respectively
In the above technical scheme, preferably, the first heat treatment is annealing treatment at a temperature of 650 to 850 ℃ for 5 to 15min, and the second heat treatment is annealing treatment at a temperature of 300 to 600 ℃ for 0.5 to 2 h.
In the above technical solution, preferably, in the steps S1 and S2, the barrier metal layer and the first metal layer are formed by evaporation or sputtering, respectively.
In the above technical solution, preferably, step S1 is preceded by the step of: and cleaning the silicon wafer before potential barrier by using a cleaning solution, wherein the cleaning time is 5-30 minutes, and the volume ratio of HF to H2O is 5: 1-20: 1.
The invention has the advantages and positive effects that: the invention adopts the design compatible with the conventional process, firstly carries out primary photoetching and wet etching NiAg, the wet etching of two layers of metal is relatively controllable, secondary photoetching is carried out after photoresist is removed, the etched NiAg is protected by the photoresist, TiAlSiTi is etched again, the corrosion appearance of the positive gold is ensured to be a stable positive triangular structure, the metal corrosion appearance can be stable by adopting the method of twice photoetching and twice etching of a plurality of layers of metal films, the phenomena of edge warping and falling are not easy to occur when the metal surface layer is subjected to tensile force, and the improvement of the product reliability is facilitated; meanwhile, the process is compatible with the conventional process, special equipment is not needed, new photoresist is not needed, and the manufacturing cost is effectively reduced.
Drawings
FIG. 1 shows a graph of the prior art corrosion topography observed under a microscope;
FIG. 2 is a schematic diagram illustrating a first photoresist stripping structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram showing a post second photolithography structure in accordance with one embodiment of the present invention;
FIG. 4 is a schematic diagram illustrating a second photoresist stripping structure according to an embodiment of the present invention;
FIG. 5 shows a microscopic view of the topography of the corrosion under the method of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, embodiments of the present invention are specifically described below with reference to the accompanying drawings.
The manufacturing method of the groove type Schottky front silver surface metal structure comprises the following steps: a. forming a barrier metal layer 2 on the silicon wafer 1 to form a silicon wafer-barrier metal structure; b. carrying out first heat treatment on the silicon wafer-potential barrier metal structure; c. forming a first metal layer 3 covering the barrier metal layer on the barrier metal layer to form a silicon wafer-barrier metal-first metal layer structure; d. carrying out secondary heat treatment on the silicon wafer-barrier metal-first metal layer structure; e. and depositing a second metal layer 4 on the first metal layer to form a silicon wafer-barrier metal-first metal layer-second metal layer structure.
Preferably, step e is followed by the step of: performing first photoetching on a surface metal layer of a Schottky device, namely a silicon wafer-barrier metal-first metal layer-second metal layer structure; etching metal for the first time; removing the photoresist; carrying out second photoetching; etching the metal for the second time; and (6) removing the photoresist. The barrier metal used was titanium, the first metal usedThe layer metal is any one or any combination of aluminum, aluminum-silicon alloy and aluminum-silicon-copper alloy, and the second metal layer metal is titanium-nickel-silver from bottom to top in sequence. The first etching metal is nickel silver metal etched by a wet method, and the second etching metal is barrier metal etched by a dry method or a wet method, first metal layer metal etched by a wet method and titanium metal etched by a dry method or a wet method. The barrier metal layer has a thickness of
The first metal layer has a thickness of
The thickness of the titanium-nickel-silver metal is respectively
And respectively forming a barrier metal layer and a first metal layer by adopting an evaporation or sputtering mode, and depositing a titanium-nickel-silver metal layer.
The first heat treatment is annealing treatment at the temperature of 650-850 ℃ for 5-15 min, and the second heat treatment is annealing treatment at the temperature of 300-600 ℃ for 0.5-2 h.
Preferably, step a further comprises the following steps: cleaning the silicon wafer before potential barrier with a cleaning solution, wherein the cleaning time is 5-30 minutes, and the volume ratio of HF to H2O is 5: 1-20: 1.
Examples
Firstly, cleaning a trench type Schottky product wafer to be made with a potential barrier before the potential barrier: cleaning the silicon wafer by using a cleaning solution with the volume ratio of HF to H2O being 20:1 for 20 minutes, so that the surface of the silicon wafer can be cleaned, the subsequent steps are not affected, and the obtained barrier structure parameters are stable;
a barrier thickness of evaporated Ti of
A silicon chip-Ti barrier structure is formed, the metal of the Ti metal layer with the thickness is stable, and the barrier is not easy to have defects; then carrying out rapid thermal annealing at the annealing temperature of 650-850 ℃ for 5-15 min, wherein the rapid thermal annealing is barrier goldAn alloy of metals, thereby forming a schottky barrier with stress relief;
then evaporating the aluminum metal to a thickness of
Forming a silicon wafer-Ti barrier-aluminum metal layer structure, and then annealing at the annealing temperature of 300-600 ℃ for 0.5-2 h; the thickness of the titanium-nickel-silver TiNiAg is respectively
The silicon wafer-Ti barrier-aluminum metal layer-TiNiAg metal layer structure is formed, the warping degree of a wafer can meet the processing requirement by adopting the metal film thickness and the heat treatment condition in the range, the problem of unstable processing technology caused by grooves is solved, the appearance abnormality of silver metal after high temperature can be avoided, and the alloy is subjected to heat treatment before the deposition of the titanium-nickel-silver, so that the good appearance of the silver metal on the front surface can be ensured;
then, first photoetching is carried out: gluing, exposing and developing, and then corroding the nickel-silver metal by a wet method: corroding the nickel-silver metal by using a nickel-silver corrosive liquid, and then removing photoresist, wherein the result is shown in figure 2, the design compatible with the conventional process is adopted, the first photoetching and the wet etching of NiAg are carried out, and the wet corrosion of the two layers of metal is relatively controllable;
then carrying out second photoetching: coating glue, exposing and developing to obtain the result shown in figure 3, etching the rest TiAlTi (titanium barrier, aluminum metal and titanium metal), and finally removing the glue to obtain the result shown in figure 4. After photoresist is removed, secondary photoetching is carried out, the corroded NiAg is protected by the photoresist, TiAlTi is etched, the corrosion morphology of the positive gold can be ensured to be a stable positive triangular structure, as shown in figure 5, the structure is beneficial to improving the withstand voltage, reducing the electric leakage and improving the reliability of the product. The forward conduction voltage drop of the barrier prepared by the method is 0.42V at VF, and the yield of the whole wafer reaches 93 percent.
According to the invention, the appropriate thickness and alloy conditions of the metal film are adopted, the stress between the films is optimized, the warping degree of the product is improved, the problem of unstable processing technology caused by grooves is reduced, and the appearance abnormality of the silver metal after high temperature can be avoided; the metal alloy is carried out before the titanium, the nickel and the silver are adopted, so that the appearance abnormality of the product can be avoided; the method of twice photoetching and twice corroding of the multilayer metal film is adopted, so that the metal corrosion appearance is stable, the phenomena of edge warping and falling are not easy to occur when the metal surface layer is subjected to tensile force, and the reliability of the product is favorably improved; meanwhile, the process is compatible with the conventional process, special equipment is not needed, new photoresist is not needed, and the manufacturing cost is effectively reduced.
Although an embodiment of the present invention has been described in detail, the description is only a preferred embodiment of the present invention and should not be construed as limiting the scope of the invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (6)
1. A manufacturing method of a groove type Schottky front silver surface metal structure is characterized by comprising the following steps:
a. performing first photoetching on a metal layer of the Schottky device: gluing, exposing and developing;
b. etching the metal for the first time, etching part of the metal in the metal layer, and removing photoresist;
c. and (3) second photoetching: gluing, exposing and developing to protect the corroded part of metal;
d. etching the metal for the second time, etching the residual metal in the metal layer, and removing the photoresist;
the formation of the metal layer of the Schottky device comprises the following steps:
s1, forming a potential barrier metal layer on a silicon wafer to form a silicon wafer-potential barrier metal structure;
s2, carrying out first heat treatment on the silicon wafer-potential barrier metal structure, wherein the first heat treatment is annealing treatment, the treatment temperature is 650-850 ℃, and the treatment time is 5-15 min;
s3, forming a first metal layer on the barrier metal layer to form a silicon wafer-barrier metal-first metal layer structure;
s4, carrying out secondary heat treatment on the silicon wafer-barrier metal-first metal layer structure, wherein the secondary heat treatment is annealing treatment, the treatment temperature is 300-600 ℃, and the treatment time is 0.5-2 h;
s5, depositing a second metal layer on the first metal layer to form a silicon wafer-potential barrier metal-first metal layer-second metal layer structure;
the barrier metal layer is titanium metal, the first metal layer is any one or any combination of aluminum, aluminum-silicon alloy and aluminum-silicon-copper alloy, and the second metal layer is titanium-nickel-silver metal from bottom to top in sequence;
the partial metal is the nickel silver metal, and the residual metal is the barrier metal, the metal of the first metal layer and the titanium metal in the second metal layer.
2. The method of claim 1 wherein the method comprises the steps of: the first etching metal is wet etching, and the second etching metal is dry etching or wet etching.
3. The method of claim 1 wherein the method comprises the steps of: the thickness of the barrier metal layer is
The first metal layer has a thickness of
The thickness of the titanium-nickel-silver metal is respectively
4. The method of manufacturing a trench schottky front side silver surface metal structure as claimed in any one of claims 1 to 3, wherein: in the steps S1 and S2, the barrier metal layer and the first metal layer are formed by evaporation or sputtering, respectively.
5. The method of claim 4 wherein the method comprises the steps of: in the steps S1 and S2, the barrier metal layer and the first metal layer are formed by evaporation or sputtering, respectively.
6. The method of claim 1 wherein the method comprises the steps of: step S1 is preceded by the step of: and cleaning the silicon wafer before potential barrier by using a cleaning solution, wherein the cleaning time is 5-30 minutes, and the volume ratio of HF to H2O is 5: 1-20: 1.
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| EP0803905A2 (en) * | 1996-04-25 | 1997-10-29 | Lucent Technologies Inc. | Method of making semiconductor devices by patterning a wafer having a non-planar surface |
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