CN104701387A - Schottky device metal structure capable of improving temperature circulating capacity and manufacturing process - Google Patents
Schottky device metal structure capable of improving temperature circulating capacity and manufacturing process Download PDFInfo
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- CN104701387A CN104701387A CN201510077641.1A CN201510077641A CN104701387A CN 104701387 A CN104701387 A CN 104701387A CN 201510077641 A CN201510077641 A CN 201510077641A CN 104701387 A CN104701387 A CN 104701387A
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Abstract
The invention discloses a schottky device metal structure capable of improving temperature circulating capacity and a manufacturing process. The metal structure is that the front metal layer includes five layers, namely, a silver film layer, a nickel film layer, a second titanium film layer, an aluminum film layer and a first titanium film layer; the vacuum degree is controlled to be less than 2E-6 torrs through an evaporator table, and a roasting chamber at high temperature of 170+/-20 DEG C is used for processing for 3 minutes, and then the evaporating process can be carried out; the first titanium film layer, the aluminum film layer, the second titanium film layer, the nickel film layer and the silver film layer can be respectively evaporated at the speeds of 20A, 40A, 20A,10A and 30A per second; the vacuum degree of the chamber is maintained to be less than 2E-6 torrs for 10 minutes after evaporating; the nitrogen is charged until reaching the atmosphere pressure, and then the chamber is opened, so as to finish the front metal evaporating process. According to the meal structure, the stress matching degree of different metal film layers can be overcome while good ohm connection is achieved, and thus the temperature circulating resistance of the chip can be obviously improved.
Description
Technical field
The present invention relates to semiconductor device art, particularly a kind of schottky device metal structure and manufacturing process improving temperature cycling capability.
Background technology
Schottky diode is named with its inventor's Schottky doctor (Schottky), and SBD is the abbreviation of Schottky barrier diode (Schottky Barrier Diode, is abbreviated as SBD).SBD do not utilize P type semiconductor to contact with N type semiconductor to form PN junction principle and makes, but the metal-semiconductor structure principle utilizing metal and semiconductor contact to be formed makes.Therefore, SBD is also referred to as metal-semiconductor (contact) diode or surface barrier diode, and it is a kind of hot carrier diode, be come out in recent years low-power consumption, big current, ultra-speed semiconductor device.Its reverse recovery time extremely short (may diminish to a few nanosecond), forward conduction voltage drop low (only about 0.4V), and rectified current can reach several thousand milliamperes.These good characteristics be fast recovery diode incomparable.
In, small-power Schottky barrier diodes from packaging appearance have band lead-in wire axialmode encapsulation (DO-41, R-6, MELF etc.), TO series encapsulation (TO-220, TO-263, TO-3P etc.), without lead-in wire patch-type encapsulation (SOD-123, SMA, SMC etc.), these packing forms are because of its packaging technology difference, mainly be divided into two classes to the requirement of the front metal of inner Schottky chip, front metal is silver (Ag) and front metal is aluminium (AL) two class.Surface is the packaging technology being applicable to utilize solder(ing) paste or weld tabs to carry out of silver; What surface was aluminium is applicable to utilize the packaging technology of breaking metal wire and carrying out.These silver or aluminium realize connecting from chip to ohm of encapsulation outer lead or pin, also needs the ohm from schottky barrier layer to these metal levels to connect at chip internal.When satisfied ohm connects, usually all multiple layer metal can be used.Take surface metal as the Schottky chip of silver be example, from table to inner usual employing silver (Ag)/nickel (Ni)/Ti (titanium) structure.
When electrology characteristic meets the demands, the physical characteristic aspect of aforesaid more metal layers often can, because of the difference of the characteristic such as membrane stress, temperature coefficient between different metal, cause chip to occur various inefficacy when applying.After its typical failure phenomenon is through temperature cycles process, the electrology characteristic of chip is damaged, often shows as chip short circuit.Find through carrying out analysis to the chip lost efficacy, after temperature cycles process, the silicon of chip front side is damaged.Therefore, how improving schottky device metal structure and manufacturing process to improve its temperature cycling capability is the problem that this product is eager to tackle key problems.
Summary of the invention
In view of prior art Problems existing and defect, the present invention researches and develops a kind of the schottky device metal structure and the manufacturing process that improve temperature cycling capability.This technique adopts vacuum multi-layer evaporation coating technique, is the front metal manufacturing process of the power schottky device based on silicon planner technology.
During usual employing silver (Ag)/nickel (Ni)/Ti (titanium) structure, the membrane stress of silver layer is lower, and the membrane stress of nickel dam is very high, and (thickness is that the Ag films tensile stress on a glass substrate of 100nm is only 0.75*10
8/ m
2, and the tensile stress of stack pile nickel film is up to 5 ~ 8*10
8/ m
2).When increasing one deck resilient coating aluminium (AL) under nickel rete, then (stack pile aluminium film is only 1.2*10 at the on-chip tensile stress of same material to the stress mismatch of understructure significantly can to cushion nickel dam stress
8/ m
2), improve the fracture toughness of device, significantly promote temperature cycling capability.
The technical scheme that the present invention takes is: a kind of schottky device metal structure improving temperature cycling capability, is characterized in that, described metal structure is the front metal layer of schottky device, and this front metal layer has five layers; By top layer to nexine metallic diaphragm order be: silver film, nickel rete, the second titanium film layer, aluminum membranous layer, the first titanium film layer; Wherein the second titanium film layer, aluminum membranous layer are between nickel rete and the first titanium film layer, and aluminum membranous layer is as stress-buffer layer; Second titanium film layer is as the adhesion between aluminum membranous layer and nickel rete and barrier layer.
The manufacturing process of the schottky device metal structure of raising temperature cycling capability of the present invention, it is characterized in that, when chip manufacture is to front metal evaporation step, on evaporation of metal board, control vacuum degree below 2E-6 holder, and after 3 minutes, namely start evaporation technology with 170 ± 20 DEG C of high-temperature baking chambers; Control to evaporate the first titanium film layer with 20 speed per second successively by evaporation of metal board in evaporation process, 40 speed per second evaporate aluminum membranous layer, 20 speed per second evaporate the second titanium film layer, 10 speed per second evaporate nickel rete and 30 speed per second evaporate silver film; The vacuum degree of having evaporated rear maintenance chamber below 2E-6 holder 10 minutes, front metal evaporation technology of then having begun to speak after inflated with nitrogen to atmospheric pressure.
The beneficial effect that the present invention produces is: adopt the present invention while realizing good ohm connection, the Stress match degree between different metal rete can be overcome, the ability (with reference to IEC 68-2-30 standard, the low high temperature circulation of more than 500-55 DEG C to 150 DEG C can be born) of the resisting temperature circulation of remarkable enhancing chip.
Accompanying drawing explanation
Fig. 1 is schottky device generalized section.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
With reference to Fig. 1, when chip manufacture is to front metal evaporation step, require on the Mark-50 type evaporation of metal board of CHA company production, control vacuum degree at 2E-6 holder (Torr) below, and after 3 minutes, namely start evaporation technology with 170 ± 20 DEG C of high-temperature baking chambers; Controlled to evaporate the first titanium film layer (Ti) with 20 speed per second successively by evaporation of metal board in evaporation process, thickness is 0.3um; 40 speed evaporation aluminum membranous layer (AL) per second, thickness is 2.5um; 20 speed per second evaporate the second titanium film layer (Ti), and thickness is 0.12um; 10 speed evaporation nickel rete (Ni) per second, thickness is 0.2um; 30 speed evaporation silver film (Ag) per second, thickness is 1.5um; Evaporated the vacuum degree of rear maintenance chamber at 2E-6(Torr) holder below 10 minutes, front metal evaporation technology of then having begun to speak after inflated with nitrogen to atmospheric pressure.
Different from the three-layer metal technique namely completed after the titanium of evaporation successively (Ti) usually carried out, nickel (Ni), silver (Ag), the present invention adds aluminum membranous layer 2 and the second titanium film layer 3 between the first titanium film layer 1 and nickel rete 4, wherein aluminum membranous layer 2 is stress-buffer layer, second titanium film layer 3 is adhesion between aluminum membranous layer 2 and nickel rete 4 and barrier layer, silver film 5 is front metal layer outermost layer, as shown in Figure 1.Be the oxidative deactivation layer of chip, schottky barrier layer, P+ guard ring and N-epitaxial loayer under front metal layer.
After identical packaging technology and operation, the sample of two kinds of process conditions is done temperature cycling test together, experimental result: adopt 18 inefficacies in 22 samples of common three-layer metal process conditions, and (Thermal cycling conditions is with reference to IEC 68-2-30 standard to adopt 0 inefficacy in 22 samples of the present invention's five layers of smithcraft condition, for-55 DEG C to 150 DEG C intervals, each circulation 60 minutes, does 50 circulations).
According to the above description, the solution of the present invention can be realized in conjunction with art technology.
Claims (3)
1. improve a schottky device metal structure for temperature cycling capability, it is characterized in that, described metal structure is the front metal layer of schottky device, and this front metal layer has five layers; By top layer to nexine metallic diaphragm order be: silver film, nickel rete, the second titanium film layer, aluminum membranous layer, the first titanium film layer; Wherein the second titanium film layer, aluminum membranous layer are between nickel rete and the first titanium film layer, and aluminum membranous layer is as stress-buffer layer; Second titanium film layer is as the adhesion between aluminum membranous layer and nickel rete and barrier layer.
2. one kind is improved the manufacturing process of the schottky device metal structure of temperature cycling capability as claimed in claim 1, it is characterized in that, when chip manufacture is to front metal evaporation step, on evaporation of metal board, control vacuum degree below 2E-6 holder, and after 3 minutes, namely start evaporation technology with 170 ± 20 DEG C of high-temperature baking chambers; Control to evaporate the first titanium film layer with 20 speed per second successively by evaporation of metal board in evaporation process, 40 speed per second evaporate aluminum membranous layer, 20 speed per second evaporate the second titanium film layer, 10 speed per second evaporate nickel rete and 30 speed per second evaporate silver film; The vacuum degree of having evaporated rear maintenance chamber below 2E-6 holder 10 minutes, front metal evaporation technology of then having begun to speak after inflated with nitrogen to atmospheric pressure.
3. a kind of manufacturing process improving the schottky device metal structure of temperature cycling capability according to claim 2, is characterized in that, evaporates that the first titanium film layer thickness is 0.3um, evaporation aluminum membranous layer thickness is 2.5um; Evaporating the second titanium film layer thickness is 0.12um; Evaporation nickel thicknesses of layers is 0.2um; Evaporation silver film thickness is 1.5um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510077641.1A CN104701387A (en) | 2015-02-13 | 2015-02-13 | Schottky device metal structure capable of improving temperature circulating capacity and manufacturing process |
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|---|---|---|---|
| CN201510077641.1A CN104701387A (en) | 2015-02-13 | 2015-02-13 | Schottky device metal structure capable of improving temperature circulating capacity and manufacturing process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390230A (en) * | 2017-08-08 | 2019-02-26 | 天津环鑫科技发展有限公司 | A kind of manufacturing method of channel schottky front silver surface metal structure |
| CN109390231A (en) * | 2017-08-08 | 2019-02-26 | 天津环鑫科技发展有限公司 | A kind of manufacturing method of channel schottky front silver surface metal structure |
| CN113314412A (en) * | 2021-06-24 | 2021-08-27 | 弘大芯源(深圳)半导体有限公司 | Method for manufacturing Schottky diode |
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| US20050167680A1 (en) * | 2004-02-02 | 2005-08-04 | Shih-Chang Shei | Light-emitting diode structure with electrostatic discharge protection |
| CN1719603A (en) * | 2004-07-09 | 2006-01-11 | 株式会社东芝 | Semiconductor device and method of manufacturing same |
| CN102142465A (en) * | 2010-12-20 | 2011-08-03 | 杭州士兰集成电路有限公司 | Front electrode structure of schottky diode and process manufacturing method of front electrode structure |
| CN103681277A (en) * | 2012-09-20 | 2014-03-26 | 无锡华润上华半导体有限公司 | Wet etching method in multilayer metal patterning process |
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2015
- 2015-02-13 CN CN201510077641.1A patent/CN104701387A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050167680A1 (en) * | 2004-02-02 | 2005-08-04 | Shih-Chang Shei | Light-emitting diode structure with electrostatic discharge protection |
| CN1719603A (en) * | 2004-07-09 | 2006-01-11 | 株式会社东芝 | Semiconductor device and method of manufacturing same |
| CN102142465A (en) * | 2010-12-20 | 2011-08-03 | 杭州士兰集成电路有限公司 | Front electrode structure of schottky diode and process manufacturing method of front electrode structure |
| CN103681277A (en) * | 2012-09-20 | 2014-03-26 | 无锡华润上华半导体有限公司 | Wet etching method in multilayer metal patterning process |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109390230A (en) * | 2017-08-08 | 2019-02-26 | 天津环鑫科技发展有限公司 | A kind of manufacturing method of channel schottky front silver surface metal structure |
| CN109390231A (en) * | 2017-08-08 | 2019-02-26 | 天津环鑫科技发展有限公司 | A kind of manufacturing method of channel schottky front silver surface metal structure |
| CN109390230B (en) * | 2017-08-08 | 2021-07-16 | 天津环鑫科技发展有限公司 | Manufacturing method of groove type Schottky front silver surface metal structure |
| CN109390231B (en) * | 2017-08-08 | 2021-10-08 | 天津环鑫科技发展有限公司 | Manufacturing method of groove type Schottky front silver surface metal structure |
| CN113314412A (en) * | 2021-06-24 | 2021-08-27 | 弘大芯源(深圳)半导体有限公司 | Method for manufacturing Schottky diode |
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Application publication date: 20150610 |