CN109378394A - A kind of quantum dot color filter substrate and preparation method thereof and display device - Google Patents
A kind of quantum dot color filter substrate and preparation method thereof and display device Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a kind of quantum dot color filter substrate and preparation method thereof and display devices, it is related to display device technical field, red green quantum dot ink material to solve the problem of in existing QDCF substrate is directly exposed in production environment influence quantum dot pixel optics efficiency in late stage process after preparation.The embodiment of the present invention includes substrates；Black matrix layer formed on substrate, wherein the black matrix layer has multiple red sub-pixel layer openings and green sub-pixels layer opening；Be filled in red sub-pixel layer opening in red quantum dot and be filled in green sub-pixels layer be open in red quantum dot；It is covered in the water oxygen barrier solvent-resistant layer of red sub-pixel layer and green sub-pixels layer away from one side of substrate.Influence of the late stage process to quantum dot pixel optics efficiency is reduced so that red green quantum dot ink material will not be directly exposed in production environment after preparation since the present invention is covered with water oxygen barrier solvent-resistant layer on sub-pixel layer.
Description
Technical field
The present invention relates to display device technical field, in particular to a kind of quantum dot color filter substrate and its preparation side
Method and display device.
Background technique
The life of general OLED (Organic Light-Emitting Diode, organic electroluminescence device) display device
Period influences with oxygen vulnerable to steam around and is reduced.Moisture source is broadly divided into two kinds: first is that permeating via external environment
Into in component, another kind is the steam absorbed in OLED technique by every layer of substance, these steam lead to electronics and show
Show and is partially easy to that oxidation reaction occurs and aging occurs to influence the service life of device in device.QDCF(Quantum dot
Color filter, quantum dot color filter) substrate needs to be packaged quantum dot pixel, if obstructing guarantor without water oxygen
Sheath, the material of encapsulated layer certainly will will affect the optical efficiency of QDCF quantum dot pixel, need to re-start encapsulation layer material
It chooses.Separately due to the light scattering process of quantum dot in QDCF, the light of quantum point scattering is caused greatly to be back to exciting light
Source part.Therefore, in order to obstruct influence of the water oxygen to device, the barrier structure of a water oxygen resistant is needed.
Traditional water oxygen barrier layer is mainly organo-mineral complexing layer structure, by vapor deposition or magnetron sputtering in organic layer
Surface prepares inorganic oxide layer, obtains core water oxygen barrier layer, by adjusting different film deposition parameters, can so that
Film is grown with different structure, different film growth patterns, then is carried out MULTILAYER COMPOSITE.The steam of previous film layer is logical in diaphragm
Road and subsequent steam access mismatch, can obtain the water oxygen barrier property of film.Due to the multilayer using organo-mineral complexing
Structure type, the predominantly continual coating preparation of preparation, if the coating prepared carries out the complex protection of QDCF substrate,
Two gluing, fitting steps are needed, and the QDCF substrate protective layer prepared is easy to appear fold, causes QD-OLED device system
Standby yield reduces.And such preparation form, it is carried out mainly in the form of magnetron sputtering or vapor deposition, the vacuum that equipment needs
Degree and other conditions are harsher, and the panel producing line of non-close is generally unable to meet demand, even if meet demand, due to blocky base
In plate traveling process, interval is necessarily caused a large amount of waste sputtered or be deposited, while the technology of above-mentioned water oxygen barrier film occur
Scheme cannot be implemented in automation QDCF ink-jet producing line.
In conclusion since the red green quantum dot ink material in QDCF substrate is directly exposed to production environment after preparation
In, quantum dot pixel optics efficiency is influenced in late stage process.
Summary of the invention
The present invention provides a kind of quantum dot color filter substrate and preparation method thereof and display device, existing to solve
Red green quantum dot ink material in QDCF substrate present in technology is directly exposed in production environment after preparation, in the later period
The problem of quantum dot pixel optics efficiency is influenced in technique.
In order to achieve the above objectives, the present invention the following technical schemes are provided:
In a first aspect, a kind of quantum dot color filter QDCF substrate provided in an embodiment of the present invention, the substrate include:
Substrate；
Black matrix layer formed on substrate, wherein the black matrix layer has multiple red sub-pixel layer openings and green
Pixel layer opening；
Be filled in red sub-pixel layer opening in red quantum dot and be filled in green sub-pixels layer be open in amount of red
Sub- point；
It is covered in the water oxygen barrier solvent-resistant layer of red sub-pixel layer and green sub-pixels layer away from one side of substrate.
Above-mentioned QDCF substrate, comprising: substrate；Black matrix layer formed on substrate, wherein the black matrix layer have it is multiple
Red sub-pixel layer opening and green sub-pixels layer opening；The red quantum dot and filling being filled in red sub-pixel layer opening
The red quantum dot in green sub-pixels layer is open；Red sub-pixel layer and green sub-pixels layer are covered in away from one side of substrate
Water oxygen obstructs solvent-resistant layer.QDCF substrate in the present invention is identical as original encapsulation cover plate effect, whole as one
Body is directly used in the later period encapsulation of OLED, since it includes be covered in red sub-pixel layer and green sub-pixels layer away from substrate one
The water oxygen of side obstructs solvent-resistant layer, so that the red green quantum dot ink material in QDCF will not be directly exposed to produce after preparation
In environment, reduce the influence in late stage process to quantum dot pixel optics efficiency.
Further, the substrate further include:
It is covered in Brugg (Prague) reflectance coating that water oxygen barrier solvent-resistant layer deviates from one side of substrate.
Above-mentioned QDCF substrate covers on water oxygen barrier solvent-resistant layer while carrying out water oxygen barrier and solvent barrier
The Brugg reflectance coating with transmission blu-ray reflection red-green glow effect has been covered, the outer quantum light conversion efficiency of QDCF substrate is improved,
The display brightness of QDCF substrate is improved simultaneously.
Further, the Brugg reflectance coating includes the polyester layer that multilayer stacks gradually and refractive index is different.
Above-mentioned QDCF substrate, the preparation process that the Brugg reflectance coating for being included uses polymer coating to stretch, to environment
It is required that it is low, compared to the technique of magnetron sputtering, the demand to environmental condition is reduced, while the wave of material can be effectively reduced
Take.
Further, the ink set component of the water oxygen barrier solvent-resistant layer includes matrix resin, crosslinking agent, initiation
Agent, surface modifier, solvent.
Above-mentioned QDCF substrate, the ink set simple process and low cost for the water oxygen barrier solvent-resistant layer for being included, and should
Water oxygen, which obstructs solvent-resistant layer, has the high-densit degree of cross linking, and the resin monomer of use is by can be improved its water oxygen after cross-linking agents
Barriering efficiency, solvent barrier are high-efficient.
Further, the matrix resin includes but is not limited to acrylate monomer or performed polymer.
Second aspect, a kind of display device provided in an embodiment of the present invention, the display device include organic electroluminescent base
Plate and any QDCF substrate of first aspect.
Above-mentioned display device then reduces in late stage process due to including the QDCF substrate in first aspect to QDCF
The influence of substrate quantum dot pixel optics efficiency.
The third aspect, a kind of method preparing QDCF substrate provided in an embodiment of the present invention, this method comprises:
Black matrix layer is formed on the substrate, and forms multiple red sub-pixels in the black matrix layer by patterning processes
Layer opening and green sub-pixels layer opening；
Red quantum dot, and the filling in the green sub-pixels layer is open are filled in the red sub-pixel layer is open
Green quantum dot；
Water oxygen, which is formed, away from one side of substrate in red sub-pixel layer and green sub-pixels layer obstructs solvent-resistant layer, and the water
Oxygen barrier solvent-resistant layer is covered in red sub-pixel layer and green sub-pixels layer away from one side of substrate.
The above method forms multiple red sub-pixel layer openings and green by patterning processes in the black matrix layer
Pixel layer opening fills quantum dot pixel in sub-pixel opening, and black matrix therein can play the role of extinction, prevent red
Interfering with each other between light and green light, and cover water oxygen on red sub-pixel layer and green sub-pixels layer and obstruct anti-solvent
Layer, so that the red green quantum dot ink material in QDCF will not be directly exposed in production environment after preparation, reduces rear
To the influence of quantum dot pixel optics efficiency in phase technique.
Further, described red quantum dot to be filled in the red sub-pixel layer is open and in the sub- picture of green
Green quantum dot is filled in plain layer opening, comprising:
The red quantum dot is filled in red sub-pixel layer opening by way of inkjet printing；
The green quantum dot is filled in green sub-pixels layer opening by way of inkjet printing.
The above method forms red sub-pixel layer and green sub-pixels layer by way of inkjet printing, reduces to setting
Standby requirement, while reducing in the form of inkjet printing the waste of material.
Further, it is described red sub-pixel layer and green sub-pixels layer away from one side of substrate formed water oxygen barrier prevent it is molten
Oxidant layer, comprising:
Water oxygen barrier solvent-resistant layer is covered in red sub-pixel layer and green sub-pixels layer by way of inkjet printing
Away from one side of substrate；
Water oxygen barrier solvent-resistant layer is solidified by ultraviolet (UV) (Ultraviolet rays, ultraviolet light).
The above method solves traditional water oxygen barrier layer system using inkjet printing and the cured technique of UV, simple process
The problem of standby technique the high requirements on the equipment, and improve the efficiency of its water sample barrier and solvent barrier.
Further, water oxygen barrier solvent-resistant layer is covered in red sub-pixel layer and green sub-pixels layer away from substrate one
After side, and before being solidified water oxygen barrier solvent-resistant layer by ultraviolet (UV), further includes:
One layer of Brugg reflectance coating is covered away from one side of substrate in water oxygen barrier solvent-resistant layer.
The above method, in water oxygen barrier solvent-resistant layer, away from one side of substrate, that one layer of Brugg is covered by way of roll-in is anti-
Film is penetrated, reduces fold, while Brugg reflectance coating has transmission blu-ray reflection red-green glow effect, improves the outer of QDCF substrate
Quantum light conversion efficiency, while improving the display brightness of QDCF substrate.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly introduced, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill in field, without any creative labor, it can also be obtained according to these attached drawings
His attached drawing.
Fig. 1 is a kind of traditional water oxygen barrier layer schematic diagram provided in an embodiment of the present invention；
Fig. 2 is a kind of structural schematic diagram of QDCF substrate provided in an embodiment of the present invention；
Fig. 3 is a kind of reflection schematic diagram of the polyester film provided in an embodiment of the present invention to the light of three kinds of colors of RGB；
Fig. 4 is a kind of reflectivity schematic diagram of the light of three kinds of colors of RGB provided in an embodiment of the present invention；
Fig. 5 is a kind of matrix resin structural schematic diagram provided in an embodiment of the present invention；
Fig. 6 is a kind of QDCF substrate preparation process schematic diagram provided in an embodiment of the present invention；
Fig. 7 is a kind of display device schematic diagram provided in an embodiment of the present invention；
Fig. 8 is a kind of flow chart of QDCF base plate preparation method provided in an embodiment of the present invention.
Icon:
1- roller；2-Brugg reflectance coating；200- substrate；210- black matrix layer；211- red quantum dot；212- green quantum
Point；220- water sample obstructs solvent-resistant layer；3- water sample obstructs solvent-resistant layer；4- black matrix layer；400- red quantum dot；401- green
Quantum dot；5- substrate；700- organic electroluminescent substrate；701-QDCF substrate.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention make into
It is described in detail to one step, it is clear that the described embodiments are only some of the embodiments of the present invention, rather than whole implementation
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
All other embodiment, shall fall within the protection scope of the present invention.
The some words occurred in text are explained below:
1, the term in the embodiment of the present invention " UV 184 " refers to that photoinitiator 184, chemical name are 1- hydroxy-cyclohexyl
Phenyl ketone, molecular formula are C25H30O3, molecular weight 378.5039, and CAS (Chemical Abstracts Service, it is Americanized
Learn digest society) registration number is 947-19-3, common catalyst and auxiliary agent are a kind of.
2, the term in the embodiment of the present invention " UV 907 " refers to photoinitiator 907 (Caccure 907), and molecular formula is
C13H17NO2S, molecular weight 251.3446, a kind of efficient free radical (I) type photoinitiator are mainly used for corresponding resin
UV polymerizing curable.
The application scenarios of description of the embodiment of the present invention are the technical solutions in order to more clearly illustrate the embodiment of the present invention,
The restriction for technical solution provided in an embodiment of the present invention is not constituted, those of ordinary skill in the art are it is found that with newly answering
With the appearance of scene, technical solution provided in an embodiment of the present invention is equally applicable for similar technical problem.Wherein, at this
In the description of invention, unless otherwise indicated, the meaning of " plurality " is two or more.
It all include display device in the electronic products such as the mobile phone, computer, the TV that are seen everywhere in life, it is therein
OLED display screen is using display screen made of organic electroluminescent LED, due to being provided simultaneously with self-luminous organic electroluminescent
Diode, is not required to that backlight, contrast are high, thickness is thin, visual angle is wide, reaction speed is fast, can be used for flexibility panel, using temperature
The excellent characteristics such as range is wide, construction and processing procedure are simpler, it is considered to be the follow-on emerging application technology of flat-panel screens.By
In very sensitive with oxygen to steam, it is easy to if organic material used in OLED display device is exposed in external environment
It is just oxidized or crystallizes, to seriously affect the performance of OLED display device.Therefore, it is necessary to have to OLED display device
The water oxygen of effect obstructs, it is made not contact the ingredients such as steam, oxygen in atmosphere.
At present in terms of preparing water oxygen barrier layer, mainly by SiO by the way of vapor deposition or magnetron sputtering2, Al2O3Preparation
At PET (Polyethylene terephthalate, thermoplastic polyester or saturated polyester), its general core layer is that PET is two-sided
It is deposited after (sputtering) and carries out the compound of PET again, water oxygen barrier layer is prepared, as shown in Figure 1, but such preparation form,
It is carried out mainly in the form of magnetron sputtering or vapor deposition, the vacuum degree and other conditions that equipment needs are harsher, non-close
Panel producing line be generally unable to meet demand, even if meet demand, due to being separated out between necessarily causing in bulk substrate traveling process
The waste for now largely sputtering or being deposited, while the technical solution of above-mentioned water oxygen barrier film cannot be in automation QDCF ink-jet producing line
On implemented.
The protection of other water oxygens barrier mainly uses nano inorganic material and organic polymer to form coating preparation water oxygen
Barrier layer is easy to appear vapor channel because object is mutually different in nanoparticle interface, causes the reduction of water oxygen barriering efficiency, and
The addition of nanoparticle can equally improve the luminous scattering of OLED.
Therefore offer of the embodiment of the present invention improves QDCF substrate, passes through inkjet printing forming amount on QDCF substrate
After son point pixel layer, one layer of water oxygen barrier is covered by inkjet printing and the cured mode of UV on quantum dot pixel layer and is prevented
Solvent layer, the water oxygen barrier solvent-resistant layer belong to full stress-strain the high-densit degree of cross linking coating, meet water oxygen and solvent protection
Effect, so that the red green quantum dot ink material in QDCF will not be directly exposed in production environment after preparation, reduces
To the influence of quantum dot pixel optics efficiency in late stage process.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to the present invention make into
It is described in detail to one step, it is clear that described embodiments are only a part of the embodiments of the present invention, rather than whole implementation
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
All other embodiment, shall fall within the protection scope of the present invention.
It is a kind of QDCF schematic diagram of substrate structure provided by the invention, specifically as shown in Fig. 2, the base for above-mentioned scene
Plate includes:
Substrate 200；
Black matrix layer 210 formed on substrate, wherein the black matrix layer has multiple red sub-pixel layers opening and green
Sub-pixels layer opening；
Be filled in red sub-pixel layer opening in red quantum dot 211 and be filled in green sub-pixels layer opening in green
Quantum dot 212；
It is covered in the water oxygen barrier solvent-resistant layer 220 of red sub-pixel layer and green sub-pixels layer away from 200 side of substrate.
Above-mentioned QDCF substrate, comprising: substrate 200；Black matrix layer 210 formed on substrate, wherein the black matrix layer
There are multiple red sub-pixel layer openings and green sub-pixels layer opening；The red quantum dot being filled in red sub-pixel layer opening
211 and it is filled in green quantum dot 212 in green sub-pixels layer opening；It is covered in red sub-pixel layer and green sub-pixels layer back
Water oxygen from 200 side of substrate obstructs solvent-resistant layer 220.QDCF substrate in the present invention acts on phase with original encapsulation cover plate
Together, the later period for being directly used in OLED as an entirety encapsulates, since it includes be covered in red sub-pixel layer and green
Water oxygen of the sub-pixel layer away from one side of substrate obstructs solvent-resistant layer, so that the red green quantum dot ink material in QDCF is after preparation
It will not be directly exposed in production environment, reduce the influence in late stage process to quantum dot pixel optics efficiency.
Preferably, the quantum dot in the red quantum dot 211 of QDCF substrate and green quantum dot 212 mainly uses InP (phosphorus
Change indium), the cadmium-free quantum dots material such as perovskite, in dot structure and TFT (Thin Film Transistor, thin film transistor (TFT))
Pixel control unit size is identical, and there are two types of the preparation forms, using quantum dot light photoresist photoetching preparation process or amount
Son point ink jet printing technology.
Preferably, the substrate further include:
It is covered in the Brugg reflectance coating that water oxygen barrier solvent-resistant layer deviates from one side of substrate.
The Brugg reflectance coating includes the polyester layer that multilayer stacks gradually and refractive index is different.
In an implementation, demand of the technique of different refractivity inorganic matter magnetron sputtering to condition is high, the Brugg in the present invention
Reflectance coating reduces the need to environmental condition compared to the technique of magnetron sputtering using the preparation process that polymer coating stretches
It asks, while the waste of material can be effectively reduced.
As shown in figure 3, polyester film in figure is that stack gradually the Brugg for stretching and being formed by macromolecule A and macromolecule B anti-
Film is penetrated, wherein the thickness range of Brugg reflectance coating is about 1~70 micron.When light source is from polyester film incidence, wherein blue
Light directly transmits, and green and red light are reflected in polyester film surface, i.e., the described Brugg reflectance coating can make blue light saturating
It crosses, reflects red green light, the outer quantum light conversion efficiency of QDCF substrate can be improved in this way, while improving the display of QDCF substrate
Brightness.
When it is implemented, the Brugg reflectance coating is to the reflectivity of the light of three kinds of colors of red, green, blue as shown in figure 4, figure
In black curve represent reflectivity, the reflectivity of blue light of the wavelength about within the scope of 430~480nm is about 10%, and wavelength
The reflectivity of green light about within the scope of 480~580nm is gradually increased with the increase of wavelength, is gradually increased about extremely by 10%
100%, the green light that medium wavelength is about 550nm, reflectivity is about 100%；Wavelength is red about within the scope of 580~700nm
The reflectivity of light is about 100%, it is known that the reflectivity very little of blue light, much smaller than the reflectivity of feux rouges and green light, i.e., the Brugg is anti-
Blue light can be transmitted by penetrating film, reflect red green light.
In an implementation, the main performance of the water oxygen barrier solvent-resistant layer is determined that ink set component includes master by ink
Want matrix resin, crosslinking agent, initiator, surface modifier, solvent.
In an implementation, the matrix resin includes but is not limited to acrylate monomer or performed polymer.
Preferably, if matrix resin is end-allyl group modified siloxane, molecular weight ranges are 500~4000, such as its
Molecular weight is 600, when any in 700,800,1000,2000,3000, is adapted to the present invention, main structure such as Fig. 5
Shown, wherein n value (1-10), x value are (1-15), and y value is (1-13), and wherein end group is acrylate structural or methyl
Acrylate structural, Fig. 5 are the matrix resins that end group is acrylate structural.
It should be noted that matrix resin cited in the embodiment of the present invention is merely illustrative, any one can be with
It improves QDCF water oxygen rejection rate, that is, solvent rejection rate matrix resin and is suitable for the present invention.
Preferably, crosslinking agent can be the crosslinking agent of polyfunctionality, including but not limited to some or all of following:
Pentaerythritol tetraacrylate, dipentaerythritol hexaacrylate, two-trimethylolpropane tetra-acrylates.
Preferably, photoinitiator is the common photoinitiator of UV, including but not limited to some or all of following:
UV184, TPO (2,4,6-trimethylbenzoyldiphenylphosphineoxide, 2,4,6- trimethylbenzenes
Formoxyl-diphenyl phosphine oxide), UV907, cumyl peroxide.
Preferably, surface modifier is levelling agent, can be pure acrylic acid esters either fluorin modified crylic acid esters levelling
Agent participates in later period UV solidification, is directly becoming the dry film ingredient of water oxygen barrier solvent-resistant layer.
Preferably, solvent includes but is not limited to some or all of following:
Toluene, normal heptane, n-hexane, ethyl methacrylate, butyl methacrylate, styrene, HEMA (2-
Hydroxyethyl methacrylate, hydroxyethyl methacrylate), (Isobornyl Acrylate, acrylic acid are different by IBOA
Norbornene ester), HDDA (1,6-Hexanediol diacrylate, 1,6- hexanediyl ester), DPGDA (n-Lauryl
Acrylate, dodecyl acrylate), TPGDA (Tripropylene Glycol Diacrylate, tripropylene glycol dipropyl
Olefin(e) acid ester), TMPTA (trimethylolpropane trimethacrylate, rimethylolpropane trimethacrylate), PETA
(Pentaerythritol triacrylate, pentaerythritol triacrylate).
In an implementation, to meet the needs of inkjet printing, the mass range of above-mentioned ink set component are as follows:
The mass range of matrix resin is 15%~30%, and the mass range of crosslinking agent is 8%~20%, the matter of initiator
Measuring range is 0.5%~3%, and the mass range of surface modifier is 1%~5%, and the mass range of solvent is 40%~60%.
It should be noted that ink composition and each component mass range cited in the embodiment of the present invention is only illustrated
Bright, QDCF water oxygen rejection rate can be improved for any one and the ink of solvent barrier rate is suitable for the present invention.
In an implementation, because using above-mentioned ink composition, therefore water oxygen barrier solvent-resistant layer is formed by way of inkjet printing,
In this way, red sub-pixel layer and green sub-pixels layer are formed by inkjet printing mode, water oxygen barrier solvent-resistant layer passes through ink-jet
Printing type is formed, during the preparation process simple process, and the requirement to equipment is lower, therefore can be produced in automation QDCF ink-jet
Implemented on line.
As shown in fig. 6, on substrate 1 by way of inkjet printing black matrix layer 2 red sub-pixel layer opening and
After the filling for completing red quantum dot 200 and green quantum dot 201 in red sub-pixel layer opening, pass through the side of inkjet printing
Water oxygen barrier solvent-resistant layer 3 is covered on red sub-pixel layer and green sub-pixels layer by formula, will finally be drawn using multiple coating
The Brugg reflectance coating 4 for stretching preparation, which carries out roll-in encapsulation by roller 5, can form water with higher finally after UV solidifies
The coating of oxygen barrier performance and solvent barrier, the dry thickness of coating are 1~10 micron, and Brugg reflectance coating therein can mention
The outer quantum light conversion efficiency of high QDCF.
Wherein, the substrate 5 in Fig. 6, black matrix layer 4, red quantum dot 400, green quantum dot 401, water sample barrier are prevented molten
Oxidant layer 3 respectively with the substrate 200 in Fig. 2, black matrix layer 210, red quantum dot layer 211, green quantum dot layer 212, water sample resistance
It is acted on every solvent-resistant layer 220 identical.
As shown in fig. 7, being a kind of display device provided in an embodiment of the present invention, which includes organic electroluminescent
Substrate 700 and QDCF substrate 701.
In an implementation, organic electroluminescent substrate 700 emits light source, and QDCF substrate 701 directly transmits blue light, reflects red green
Light excites the red quantum dot in red quantum dot and green quantum after receiving the red-green glow being reflected back again
Green quantum dot in point issues feux rouges and green light, and last red green blue tricolor carries out various combinations and forms various different colours
Light progress is shown on display device.
As shown in figure 8, being a kind of method for preparing QDCF substrate provided in an embodiment of the present invention, following step is specifically included
It is rapid:
Step 800 is formed on the substrate black matrix layer, and is formed in the black matrix layer by patterning processes multiple red
Sub-pixels layer opening and green sub-pixels layer opening；
Step 801 is filled red quantum dot in the red sub-pixel layer is open, and is opened in the green sub-pixels layer
Green quantum dot is filled in mouthful；
Step 802 forms water oxygen barrier solvent-resistant layer away from one side of substrate in red sub-pixel layer and green sub-pixels layer,
And the water oxygen barrier solvent-resistant layer is covered in red sub-pixel layer and green sub-pixels layer away from one side of substrate.
Above scheme forms multiple red sub-pixel layer openings and green by patterning processes in the black matrix layer
Pixel layer opening, sub-pixel opening in fill quantum dot, black matrix therein can play the role of extinction, prevent feux rouges and
Interfering with each other between green light, and cover water oxygen on red sub-pixel layer and green sub-pixels layer and obstruct solvent-resistant layer,
So that the red green quantum dot ink material in QDCF will not be directly exposed in production environment after preparation, reduce in later period work
To the influence of quantum dot pixel optics efficiency in skill.
In an implementation, black matrix layer is etched into shape by the patterning processes such as photoresist coating, photoresist exposure development, etching
At multiple red sub-pixel layers opening and green sub-pixels layer opening.
It should be noted that patterning processes method cited in the embodiment of the present invention is merely illustrative, it is any
The patterning processes that multiple red sub-pixel layer openings and green sub-pixels layer opening can be formed in the black matrix layer are all suitable
For the embodiment of the present invention.
Preferably, described red quantum dot to be filled in the red sub-pixel layer is open and in the green sub-pixels
Green quantum dot is filled in layer opening, comprising:
The red quantum dot is filled in red sub-pixel layer opening by way of inkjet printing；
The green quantum dot is filled in green sub-pixels layer opening by way of inkjet printing.
Preferably, described to form the anti-solvent of water oxygen barrier away from one side of substrate in red sub-pixel layer and green sub-pixels layer
Layer, comprising:
Water oxygen barrier solvent-resistant layer is covered in red sub-pixel layer and green sub-pixels layer by way of inkjet printing
Away from one side of substrate；
Water oxygen barrier solvent-resistant layer is solidified by ultraviolet (UV).
Preferably, water oxygen barrier solvent-resistant layer is covered in red sub-pixel layer and green sub-pixels layer away from one side of substrate
Later, and before water oxygen barrier solvent-resistant layer is solidified by ultraviolet (UV), further includes:
One layer of Brugg reflectance coating is covered by way of roll-in away from one side of substrate in water oxygen barrier solvent-resistant layer.
Above by reference to show according to the method for the embodiment of the present invention, the frame of device (system) and/or computer program product
Figure and/or the flow chart description present invention.It should be understood that can realize that block diagram and or flow chart is shown by computer program instructions
The combination of the block of a block and block diagram and or flow chart diagram for figure.These computer program instructions can be supplied to logical
With computer, the processor of special purpose computer and/or other programmable data processing units, to generate machine, so that via meter
The instruction that calculation machine processor and/or other programmable data processing units execute creates for realizing block diagram and or flow chart block
In specified function action method.
Correspondingly, the present invention can also be implemented with hardware and/or software (including firmware, resident software, microcode etc.).More
Further, the present invention can take computer usable or the shape of the computer program product on computer readable storage medium
Formula has the computer realized in the medium usable or computer readable program code, to be made by instruction execution system
It is used with or in conjunction with instruction execution system.In the context of the present invention, computer can be used or computer-readable medium can be with
It is arbitrary medium, may include, stores, communicates, transmits or transmit program, is made by instruction execution system, device or equipment
With, or instruction execution system, device or equipment is combined to use.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of quantum dot color filter QDCF substrate, which is characterized in that the substrate includes:
Substrate；
Black matrix layer formed on substrate, wherein the black matrix layer has multiple red sub-pixel layers openings and green sub-pixels
Layer opening；
The red quantum dot being filled in red sub-pixel layer opening and the green quantum being filled in green sub-pixels layer opening
Point；
It is covered in the water oxygen barrier solvent-resistant layer of red sub-pixel layer and green sub-pixels layer away from one side of substrate.
2. QDCF substrate as described in claim 1, which is characterized in that the substrate further include:
It is covered in Prague Brugg reflectance coating that water oxygen barrier solvent-resistant layer deviates from one side of substrate.
3. QDCF substrate as claimed in claim 2, which is characterized in that the Brugg reflectance coating include multilayer stack gradually and
The different polyester layer of refractive index.
4. QDCF substrate as described in claim 1, which is characterized in that the ink set component of the water oxygen barrier solvent-resistant layer
Including matrix resin, crosslinking agent, initiator, surface modifier, solvent.
5. QDCF substrate as claimed in claim 4, which is characterized in that the matrix resin includes but is not limited to acrylate list
Body or performed polymer.
6. a kind of display device, which is characterized in that the display device include organic electroluminescent substrate and as claim 1~
5 any QDCF substrates.
7. a kind of method for preparing QDCF substrate, which is characterized in that this method comprises:
Black matrix layer is formed on the substrate, and forms multiple red sub-pixel layers in the black matrix layer by patterning processes and opens
Mouth and green sub-pixels layer opening；
Red quantum dot, and the filling green in the green sub-pixels layer is open are filled in the red sub-pixel layer is open
Quantum dot；
Water oxygen is formed away from one side of substrate in red sub-pixel layer and green sub-pixels layer and obstructs solvent-resistant layer, and the water oxygen hinders
Red sub-pixel layer and green sub-pixels layer are covered in away from one side of substrate every solvent-resistant layer.
8. the method for claim 7, which is characterized in that described to fill amount of red in the red sub-pixel layer is open
Sub- point and the green quantum dot of filling in the green sub-pixels layer is open, comprising:
The red quantum dot is filled in red sub-pixel layer opening by way of inkjet printing；
The green quantum dot is filled in green sub-pixels layer opening by way of inkjet printing.
9. the method for claim 7, which is characterized in that described to deviate from lining in red sub-pixel layer and green sub-pixels layer
Bottom side forms water oxygen and obstructs solvent-resistant layer, comprising:
Water oxygen barrier solvent-resistant layer is covered in red sub-pixel layer by way of inkjet printing and green sub-pixels layer deviates from
One side of substrate；
Water oxygen barrier solvent-resistant layer is solidified by ultraviolet (UV).
10. method as claimed in claim 9, which is characterized in that water oxygen barrier solvent-resistant layer is covered in red sub-pixel layer
With green sub-pixels layer after one side of substrate, and carrying out water oxygen barrier solvent-resistant layer to solidify it by ultraviolet (UV)
Before, further includes:
One layer of Brugg reflectance coating is covered away from one side of substrate in water oxygen barrier solvent-resistant layer.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110299459A (en) * | 2019-06-14 | 2019-10-01 | 上海大学 | White light LED part and preparation method thereof based on perovskite quantum dot and InP quantum dot |
| CN110854167A (en) * | 2019-10-28 | 2020-02-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| WO2023111761A1 (en) * | 2021-12-16 | 2023-06-22 | 3M Innovative Properties Company | Optical film, backlight and display system |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170141162A1 (en) * | 2015-11-16 | 2017-05-18 | Industry-Academic Cooperation Foundation Yonsei University | Display panel and apparatus including the same |
| CN107068896A (en) * | 2016-12-28 | 2017-08-18 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel and preparation method thereof |
| CN107065289A (en) * | 2017-05-26 | 2017-08-18 | 青岛海信电器股份有限公司 | Quantum dot color filter and preparation method, liquid crystal panel, liquid crystal display |
| CN107861181A (en) * | 2017-12-04 | 2018-03-30 | 福州大学 | A kind of quantum dot color filter and preparation method thereof |
| CN108242483A (en) * | 2016-12-27 | 2018-07-03 | 三星电子株式会社 | Light emitting device packaging piece |
| CN108257949A (en) * | 2018-01-24 | 2018-07-06 | 福州大学 | Light efficiency extraction and color conversion micron order LED display and manufacturing method can be achieved |
-
2018
- 2018-10-09 CN CN201811173342.8A patent/CN109378394A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170141162A1 (en) * | 2015-11-16 | 2017-05-18 | Industry-Academic Cooperation Foundation Yonsei University | Display panel and apparatus including the same |
| CN108242483A (en) * | 2016-12-27 | 2018-07-03 | 三星电子株式会社 | Light emitting device packaging piece |
| CN107068896A (en) * | 2016-12-28 | 2017-08-18 | 上海天马有机发光显示技术有限公司 | A kind of organic electroluminescence display panel and preparation method thereof |
| CN107065289A (en) * | 2017-05-26 | 2017-08-18 | 青岛海信电器股份有限公司 | Quantum dot color filter and preparation method, liquid crystal panel, liquid crystal display |
| CN107861181A (en) * | 2017-12-04 | 2018-03-30 | 福州大学 | A kind of quantum dot color filter and preparation method thereof |
| CN108257949A (en) * | 2018-01-24 | 2018-07-06 | 福州大学 | Light efficiency extraction and color conversion micron order LED display and manufacturing method can be achieved |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110299459A (en) * | 2019-06-14 | 2019-10-01 | 上海大学 | White light LED part and preparation method thereof based on perovskite quantum dot and InP quantum dot |
| CN110854167A (en) * | 2019-10-28 | 2020-02-28 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
| WO2021082042A1 (en) * | 2019-10-28 | 2021-05-06 | 深圳市华星光电半导体显示技术有限公司 | Display panel and fabrication method therefor |
| US11374062B2 (en) | 2019-10-28 | 2022-06-28 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel including a perovskite color conversion functional layer |
| WO2023111761A1 (en) * | 2021-12-16 | 2023-06-22 | 3M Innovative Properties Company | Optical film, backlight and display system |
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Application publication date: 20190222 |