CN109860419A - Display and preparation method thereof - Google Patents
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- CN109860419A CN109860419A CN201910090825.XA CN201910090825A CN109860419A CN 109860419 A CN109860419 A CN 109860419A CN 201910090825 A CN201910090825 A CN 201910090825A CN 109860419 A CN109860419 A CN 109860419A
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Abstract
The present invention provides a kind of display and preparation method thereof, the display includes: array basal plate, including multiple thin film transistor (TFT)s (thin-film transistor, TFT)；One pixel defining layer (PDL), including multiple electroluminescent devices (EL), it is configured on the array substrate, respectively corresponds the multiple thin film transistor (TFT), the multiple thin film transistor (TFT) is used to control shining for the multiple electroluminescent device；One encapsulated layer is configured on the pixel defining layer；Multiple coloured silk films, are configured on the encapsulated layer, and position is on the position of the correspondence electroluminescent device respectively, wherein the surface of the multiple coloured silk film respectively has a nanometer structure；And multiple black matrix"s (BM), it is configured on the encapsulated layer, and position is on the not position occupied by the multiple color film (CF).
Description
Technical field
The present invention relates to a kind of displays and preparation method thereof, more particularly to a kind of display that can reduce color film reflectivity
Device.
Background technique
Polaroid (POL) can be effectively reduced the reflectivity of strong light lower panel, but have lost the light out close to 58%.This
For OLED, its service life burden is substantially increased.Referring to Figure 1A, Figure 1A system uses showing for the display of traditional polaroid
Be intended to, the display 100 using traditional polaroid sequentially the array substrate (Array substrate) 11 including stacking,
Electroluminescent device (EL) 12, thin-film encapsulation layer (TFE) 13 and polaroid (POL) 14, wherein traditional polaroid thickness it is larger,
Material is crisp, is unfavorable for the exploitation that dynamic bends product.Product is bent in order to develop the dynamic based on OLED display technology, it is necessary to be led
Enter new material, new technology and new process substitution polaroid.Referring to Figure 1B, Figure 1B system is substituted using color film (Color Filter)
The schematic diagram of the existing display 200 of polaroid (POL), the existing display sequentially include the array substrate of stacking
(Array substrate) 21, electroluminescent device (EL) 22, thin-film encapsulation layer (TFE) 23 and color film (CF) 25.In Figure 1B
In shown existing display, POL-less skill is attributed to using color film (Color Filter) substitution polaroid (POL)
The thickness of functional layer can not only be reduced to 5 μm of < from~100 μm by art, POL-less technology；And can by light emission rate from
42% improves to 60%.POL-less technology based on color film be considered as realize dynamic bending product development key technology it
One.However, for the color film (CF) after spin coating or inkjet printing, due to the property of its own, still to organic light emission two
There are higher reflexs for the self-luminous of pole pipe (OLED) and environment light.
In order to solve the problems, such as that display prizes film to the reflectivity of environment light, needing one kind can be in the display of POL-less
The middle OLED device that reduces is to the method for the reflectivity of visible light wave range environment light.
Summary of the invention
In view of this, the present invention provides a kind of nanostructure in the color film surface (R/G/B-CF) production specific period, drop
Low coloured silk film functional layer is to the reflectivity of environment light, to further promote the important parameters such as contrast of product.
Accordingly, an embodiment according to the present invention, the present invention provides a kind of displays, comprising: array basal plate, including
Multiple thin film transistor (TFT)s (thin-film transistor, TFT)；One pixel defining layer (PDL), including multiple electroluminescent cells
Part (EL), is configured on the array substrate, respectively corresponds the multiple thin film transistor (TFT), and the multiple film crystal is effective
In shining for the multiple electroluminescent device of control；One encapsulated layer is configured on the pixel defining layer；Multiple coloured silk films,
It is configured on the encapsulated layer, and position is on the position of the correspondence electroluminescent device respectively, wherein the multiple coloured silk film
Surface respectively there is a nanometer structure；And multiple black matrix"s (BM), it is configured on the encapsulated layer, and position is not by institute
It states on position occupied by multiple color films (CF).
Another embodiment according to the present invention, the present invention also provides a kind of preparation methods of display, including following step
Suddenly；S10 provides array basal plate, including multiple thin film transistor (TFT)s (thin-film transistor, TFT)；S20 configures a picture
On plain definition layer (PDL) Yu Suoshu array substrate, wherein the pixel defining layer includes multiple electroluminescent devices (EL) point
The multiple thin film transistor (TFT) is not corresponded to, and the multiple thin film transistor (TFT) is used to control the hair of the multiple electroluminescent device
Light；S30 configures an encapsulated layer on the pixel defining layer；The multiple color films of S40 coating are on the encapsulated layer, and difference
Position is on the position of the correspondence electroluminescent device；S45 forms a nanometer structure on the surface of the multiple color film；And
S50 is coated on multiple black matrix" (BM) Yu Suoshu encapsulated layers, and position is in the not position occupied by the multiple color film (CF)
It sets.
In one embodiment of this invention, the nanometer structure can be formed using at least one of following manner: be utilized
Extruding (nano imprint) mode, photolithographicallpatterned and the plasma etching mode of one metallic mold for nano-imprint.
In one embodiment of this invention, the nanometer structure is zigzag.
In one embodiment of this invention, the surface of the multiple black matrix" (BM) can respectively have a nanometer structure,
Described in nanometer structure be zigzag.
In one embodiment of this invention, the display further includes a protective layer and is configured in the nanometer structure,
Wherein the protective layer may include silica, or the organic material that including other there is a refractive index to be lower than 1.4.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Figure 1A system uses the schematic diagram of the display of traditional polaroid.
Figure 1B system substitutes the schematic diagram of the existing display of polaroid (POL) using color film (Color Filter)
Fig. 2 is the color film side view of the display of an embodiment according to the present invention.
Fig. 3 is the flow chart of the manufacturing method of the display of an embodiment according to the present invention.
Fig. 4 A to 4D is the manufacturing method of the display of an embodiment according to the present invention, the knot of display in each step
Structure schematic diagram.
Specific embodiment
For above content of the invention can be clearer and more comprehensible, preferred embodiment is cited below particularly, and institute's accompanying drawings is cooperated to make
It is described in detail.
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, for example, [longitudinal direction], [transverse direction], [on], [under], [preceding], [rear], [left side], [right side],
[interior], [outer], [side] etc. are only the directions with reference to annexed drawings.Therefore, the direction term used is to illustrate and understand
The present invention, rather than to limit the present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention provides a kind of nanostructure in the color film surface (R/G/B-CF) production specific period, reduces color film function
Layer is to the reflectivity of environment light, to further promote the important parameters such as contrast of product.
Accordingly, an embodiment according to the present invention, the present invention provides a kind of displays, referring to fig. 2 and Fig. 4 D.Fig. 2 is
The color film side view of the display of an embodiment according to the present invention；Fig. 4 D is the display of an embodiment according to the present invention
The structural schematic diagram of display in the completion step of manufacturing method.As shown in Fig. 2 and Fig. 4 D, specifically, according to the present invention it
The display 300 of one embodiment includes: array basal plate 31, including multiple thin film transistor (TFT)s (thin-film transistor,
TFT)310；One pixel defining layer (PDL) 32, including multiple electroluminescent devices (EL) 320, are configured at the array substrate 31
On, the multiple thin film transistor (TFT) 310 is respectively corresponded, the multiple thin film transistor (TFT) 310 is the multiple electroluminescent for controlling
Luminescent device 320 shines；One encapsulated layer 33 is configured on the pixel defining layer 32；Multiple coloured silk films 35, are configured at described
On encapsulated layer 33, and position is on the position of the correspondence electroluminescent device 320 respectively, wherein the table of the multiple coloured silk film 35
Face respectively has a nanometer structure 350；And multiple black matrix"s (BM) 36, it is configured on the encapsulated layer 33, and position is not
On the position occupied by the multiple color film (CF) 35.
Another embodiment according to the present invention, the present invention also provides a kind of preparation methods of display, together referring to Fig. 3
And Fig. 4 A to 4D.Fig. 3 is the flow chart of the manufacturing method of the display of an embodiment according to the present invention；Fig. 4 A to 4D is foundation
The manufacturing method of the display of one embodiment of the invention, the structural schematic diagram of display in each step.Extremely such as Fig. 3 and Fig. 4 A
Shown in 4D, the preparation method of the display 300 of embodiment, includes the following steps one of according to the present invention；S10 provides an array base
Plate 31, including multiple thin film transistor (TFT)s (thin-film transistor, TFT) 310, as shown in Figure 4 A；S20 configures a pixel
Definition layer (PDL) 32 is on the array substrate 31, wherein the pixel defining layer 32 includes multiple electroluminescent devices
(EL) 320 the multiple thin film transistor (TFT) 310 is respectively corresponded, the multiple thin film transistor (TFT) 310 is for controlling the multiple electricity
Electroluminescence device 320 shines, as shown in Figure 4 A；S30 configures an encapsulated layer 33 on the pixel defining layer 32, such as Fig. 4 A
It is shown；The multiple color films 35 of S40 coating are on the encapsulated layer 33, and difference position is in the correspondence electroluminescent device 320
On position, as shown in Figure 4 B；S45 forms a nanometer structure 350 on the surface of the multiple color film 35, as shown in Figure 2；And
S50 is coated with multiple black matrix"s (BM) 36 on the encapsulated layer 33, and position is not shared by the multiple color film (CF) 35
According to position on, as shown in Figure 4 D.
In one embodiment of this invention, the nanometer structure can be formed using at least one of following manner: be utilized
Extruding (nano imprint) mode, photolithographicallpatterned and the plasma etching mode of one metallic mold for nano-imprint.
With continued reference to Fig. 2 and Fig. 4 C-4D, in one embodiment of this invention, the nanometer structure 350 is zigzag,
Under same thickness, " zigzag " nano array structure is prepared in even curface, film layer can be effectively reduced to ambient light
Reflectivity；And in another embodiment of the present invention, the surface of the multiple black matrix" (BM) also optionally can respectively have
One nanometer structure, wherein the nanometer structure is zigzag, as shown in Figure 2.
D referring to fig. 4, in one embodiment of this invention, in order to protect the body structure surface of the nanometer structure, described is aobvious
Show that the preparation method of device further includes one protective layer 37 of vapor deposition in the nanometer structure 350, wherein the protective layer may include oxygen
SiClx, or including other have a refractive index be lower than 1.4 organic material, the protective layer with a thickness of 20-100 μm.
The color film surface with/without micro-structure is compared to visible reflectance FDTD simulation result, it was demonstrated that by color film table
Face carries out micro-structure processing, can significantly reduce OLED device to the reflectivity of environment light to improve oled panel
Contrast.
In one embodiment of this invention, the multiple electroluminescent device (EL) respectively corresponds multiple sub-pixels, and institute
Stating multiple color films (CF) may include that (figure is not for multiple red color films (R), multiple green tint films (G) and multiple blue color films (B)
Show).
According to previous embodiment it is found that the present invention provides one kind in the color film surface (R/G/B-CF) production specific period
Nanostructure reduces color film functional layer to the reflectivity of environment light, to further promote the important parameters such as the contrast of product.
In conclusion although the present invention has been disclosed above in the preferred embodiment, but above preferred embodiment is not to limit
The system present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of display, comprising:
Array basal plate, including multiple thin film transistor (TFT)s (thin-film transistor, TFT)；
One pixel defining layer (PDL), including multiple electroluminescent devices (EL), are configured on the array substrate, right respectively
The multiple thin film transistor (TFT) is answered, the multiple thin film transistor (TFT) is used to control shining for the multiple electroluminescent device；
One encapsulated layer is configured on the pixel defining layer；
Multiple coloured silk films, are configured on the encapsulated layer, and distinguish position on the position of the correspondence electroluminescent device, wherein
The surface of the multiple coloured silk film respectively has a nanometer structure；And
Multiple black matrix"s (BM), are configured on the encapsulated layer, and position is not occupied by the multiple color film (CF)
On position.
2. liquid crystal display according to claim 1, wherein the nanometer structure is zigzag.
3. display according to claim 1 further includes a protective layer and is configured in the nanometer structure.
4. display according to claim 3, wherein the protective layer is silica.
5. display according to claim 3, wherein the protective layer is the organic material that refractive index is lower than 1.4.
6. a kind of preparation method of display, comprising the following steps:
S10 provides array basal plate, including multiple thin film transistor (TFT)s (thin-film transistor, TFT)；
S20 is configured on a pixel defining layer (PDL) Yu Suoshu array substrate, wherein the pixel defining layer includes multiple electroluminescent
Luminescent device (EL) respectively corresponds the multiple thin film transistor (TFT), and the multiple thin film transistor (TFT) is the multiple electroluminescent for controlling
Luminescent device shines；
S30 configures an encapsulated layer on the pixel defining layer；
The multiple color films of S40 coating are on the encapsulated layer, and difference position is on the position of the correspondence electroluminescent device；
S45 forms a nanometer structure on the surface of the multiple color film；And
S50 is coated on multiple black matrix" (BM) Yu Suoshu encapsulated layers, and position is occupied not by the multiple color film (CF)
Position on.
7. the preparation method of display according to claim 6, wherein the nanometer structure is to utilize a nano impression mould
Tool is formed in a manner of squeezing (nano imprint).
8. the preparation method of display according to claim 6, wherein the nanometer structure is formed using photolithographicallpatterned.
9. the preparation method of display according to claim 6, wherein the nanometer structure is to utilize plasma etching
Mode is formed.
10. the preparation method of display according to claim 6, wherein the nanometer structure is zigzag.
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| CN201910090825.XA CN109860419A (en) | 2019-01-30 | 2019-01-30 | Display and preparation method thereof |
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| CN201910090825.XA CN109860419A (en) | 2019-01-30 | 2019-01-30 | Display and preparation method thereof |
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| CN111864105A (en) * | 2020-07-09 | 2020-10-30 | 武汉华星光电半导体显示技术有限公司 | Display panel and preparation method thereof |
| WO2020258462A1 (en) * | 2019-06-24 | 2020-12-30 | 深圳市华星光电半导体显示技术有限公司 | Display panel and preparation method therefor |
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