CN111650678A - High-brightness quantum dot film - Google Patents
High-brightness quantum dot film Download PDFInfo
- Publication number
- CN111650678A CN111650678A CN202010606630.9A CN202010606630A CN111650678A CN 111650678 A CN111650678 A CN 111650678A CN 202010606630 A CN202010606630 A CN 202010606630A CN 111650678 A CN111650678 A CN 111650678A
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- structural layer
- quantum dot
- dot film
- base material
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/04—Prisms
- G02B5/045—Prism arrays
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133621—Illuminating devices providing coloured light
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Liquid Crystal (AREA)
- Planar Illumination Modules (AREA)
Abstract
The invention discloses a high-brightness quantum dot film which comprises a lower base material, a first structural layer, a second structural layer and an upper base material, wherein the lower base material, the first structural layer, the second structural layer and the upper base material are sequentially arranged from bottom to top, the upper end surface of the first structural layer is a triangular prism which is sequentially arranged, red quantum dot materials and green quantum dot materials which are different in color and have a weight ratio of 1: 1 are respectively added into the first structural layer and the second structural layer, and the refractive index of the first structural layer is larger than that of the second structural layer. By means of the design of the prism structure and the matching of the refractive index difference of the two microstructure layers, the quantum dot film prepared by the method has an optical light collection effect, and has an effect of improving the brightness under the condition of improving the color saturation of a picture of a liquid crystal display by matching with a blue light LED backlight module, so that the aims of wide color gamut and energy conservation are fulfilled.
Description
Technical Field
The invention belongs to the technical field of liquid crystal displays, and particularly relates to a high-brightness quantum dot film.
Background
At present, in order to improve the color saturation of the lcd, one of the technologies is implemented by using a blue LED in combination with a quantum dot film. The quantum dot film is used without changing the original backlight module structure of the display, and the wide color gamut effect of the liquid crystal display is realized by directly adding one quantum dot film.
In general, quantum dot films are generally formed by blending quantum dots with thermosetting or photocuring coatings, and two water-vapor barrier films are used for providing a protection function for quantum dot materials. But the structure is single and the performance is weak.
Therefore, a high-luminance quantum dot film is desired to be proposed.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a high-brightness quantum dot film.
In order to solve the technical problems, the invention provides the following technical scheme:
the invention provides a high-brightness quantum dot film which comprises a lower base material, a first structural layer, a second structural layer and an upper base material, wherein the lower base material, the first structural layer, the second structural layer and the upper base material are sequentially arranged from bottom to top, the upper end surface of the first structural layer and the lower end surface of the second structural layer are triangular prisms which are sequentially arranged, and the first structural layer and the second structural layer are respectively added with a material with the weight ratio of 1: 1, the refractive index of the first structural layer is larger than that of the second structural layer.
In a preferred embodiment of the present invention, the first structural layer is a light-curable resin material, the refractive index of the light-curable resin material is 1.63 to 1.7, and 0.5 to 5% of a red or green quantum dot material is added.
As a preferable technical scheme of the invention, the second structural layer is made of a light-cured resin material, the refractive index of the second structural layer is 1.3-1.42, and 0.5-5% of red or green quantum dot material is added.
As a preferred technical solution of the present invention, the upper substrate and the lower substrate are water vapor barrier films.
In a preferred embodiment of the present invention, the distance from the apex of the triangular prism of the first structural layer to the lower end surface of the upper base material and the distance from the apex of the triangular prism of the second structural layer to the upper end surface of the lower base material are 1 to 10 μm.
As a preferred technical solution of the present invention, the present invention provides a method for preparing a high-brightness quantum dot film, comprising the steps of:
s1, forming a first structural layer on the water-gas barrier film by using a mold with a microstructure and a photocuring process, wherein the microstructures are triangular prisms which are arranged in sequence;
s2, performing secondary coating on the first structural layer to form a second structural layer;
and S3, finally, covering the second structural layer with a water-gas barrier film and then carrying out a photocuring process.
Compared with the prior art, the invention has the following beneficial effects:
by means of the design of the prism structure and the matching of the refractive index difference of the two microstructure layers, the quantum dot film prepared by the method has an optical light collection effect, and has an effect of improving the brightness under the condition of improving the color saturation of a picture of a liquid crystal display by matching with a blue light LED backlight module, so that the aims of wide color gamut and energy conservation are fulfilled.
Drawings
FIG. 1 is a schematic structural view of a high-photon-intensity dot film according to the present invention.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
In order to achieve the object of the present invention, as shown in fig. 1, in one embodiment of the present invention, a high-luminance quantum dot film is provided, which includes a lower substrate 1, a first structural layer 2, a second structural layer 3, and an upper substrate 4, which are sequentially disposed from bottom to top, an upper end surface of the first structural layer 2 and a lower end surface of the second structural layer are triangular prisms arranged in sequence, and a weight ratio of 1: 1, the refractive index of the first structural layer 2 is larger than that of the second structural layer 3.
Further, the first structural layer 2 is a light-cured resin material, and has a refractive index of 1.63-1.7, and according to practical situations, the refractive index of the first structural layer 2 can be selected to be 1.63, 1.65 or 1.7, and 0.5%, 1%, 2%, 5% of red or green quantum dot material is added.
Further, the second structure layer 3 is a light-cured resin material, and has a refractive index of 1.3-1.42, and according to practical situations, the refractive index of the second structure layer 3 can be selected to be 1.3, 1.35 or 1.42, and 0.5%, 1%, 2%, 5% of red or green quantum dot material is added.
Further, the upper base material and the lower base material are water vapor barrier films, and the distance from the vertex of the triangular prism of the first structural layer to the lower end surface of the upper base material and the distance from the vertex of the triangular prism of the second structural layer to the upper end surface of the lower base material are 1 μm, 2 μm, 5 μm or 10 μm.
In order to further optimize the implementation effect of the present invention, in another embodiment of the present invention, this embodiment provides a method for preparing a high-photon-measurement dot film, including the following steps:
s1, forming a first structural layer on the water-gas barrier film by using a mold with a microstructure and a photocuring process, wherein the microstructures are triangular prisms which are arranged in sequence;
s2, performing secondary coating on the first structural layer to form a second structural layer;
and S3, finally, covering the second structural layer with a water-gas barrier film and then carrying out a photocuring process.
By means of the design of the prism structure and the matching of the refractive index difference of the two microstructure layers, the quantum dot film prepared by the method has an optical light collection effect, and has an effect of improving the brightness under the condition of improving the color saturation of a picture of a liquid crystal display by matching with a blue light LED backlight module, so that the aims of wide color gamut and energy conservation are fulfilled.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (6)
1. The high-brightness quantum dot film is characterized by comprising a lower base material, a first structural layer, a second structural layer and an upper base material which are sequentially arranged from bottom to top, wherein the upper end surface of the first structural layer and the lower end surface of the second structural layer are triangular prisms which are sequentially arranged, quantum dot materials with the weight ratio of 1: 1 and different colors of red and green are added in the first structural layer and the second structural layer respectively, and the refractive index of the first structural layer is larger than that of the second structural layer.
2. The high-brightness quantum dot film according to claim 1, wherein the first structural layer is a light-cured resin material with a refractive index of 1.63-1.7, and 0.5-5% of red or green quantum dot material is added.
3. The high-brightness quantum dot film as claimed in claim 1, wherein the second structural layer is a light-cured resin material with a refractive index of 1.3-1.42, and 0.5-5% of red or green quantum dot material is added.
4. The high-brightness quantum dot film as claimed in claim 1, wherein the upper and lower substrates are water-vapor barrier films.
5. The high-luminance photonic dot film according to claim 1, wherein a distance from a vertex of the triangular prism of the first structural layer to a lower end surface of the upper substrate and a distance from a vertex of the triangular prism of the second structural layer to an upper end surface of the lower substrate are 1 to 10 μm.
6. A preparation method of a high-brightness quantum dot film is characterized by comprising the following steps:
s1, forming a first structural layer on the water-gas barrier film by using a mold with a microstructure and a photocuring process, wherein the microstructures are triangular prisms which are arranged in sequence;
s2, performing secondary coating on the first structural layer to form a second structural layer;
and S3, finally, covering the second structural layer with a water-gas barrier film and then carrying out a photocuring process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010606630.9A CN111650678A (en) | 2020-06-29 | 2020-06-29 | High-brightness quantum dot film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010606630.9A CN111650678A (en) | 2020-06-29 | 2020-06-29 | High-brightness quantum dot film |
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| CN111650678A true CN111650678A (en) | 2020-09-11 |
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| CN202010606630.9A Pending CN111650678A (en) | 2020-06-29 | 2020-06-29 | High-brightness quantum dot film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113093439A (en) * | 2021-04-23 | 2021-07-09 | 业成科技（成都）有限公司 | Backlight module, preparation method thereof and display device |
| WO2023083146A1 (en) | 2021-11-09 | 2023-05-19 | 广东粤港澳大湾区国家纳米科技创新研究院 | Quantum dot integrated board, method for preparing same, and display apparatus comprising same |
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Application publication date: 20200911 |