CN104777669A - Quantum dot film and backlight module - Google Patents
Quantum dot film and backlight module Download PDFInfo
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- CN104777669A CN104777669A CN201510203028.XA CN201510203028A CN104777669A CN 104777669 A CN104777669 A CN 104777669A CN 201510203028 A CN201510203028 A CN 201510203028A CN 104777669 A CN104777669 A CN 104777669A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01791—Quantum boxes or quantum dots
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
Abstract
The invention provides a quantum dot film and a backlight module. The quantum dot film comprises a green quantum dot film layer and red quantum dot film layers arranged at the two sides of the green quantum dot film layer. The red quantum dot film layers are arranged at the two sides of the green quantum dot film layer, so that the stability of green quantum dots can be fully protected, the influence of oxygen gas and moisture on the green quantum dots can be reduced to the greatest degree, and meanwhile, green quantum dots pre se are more stable than the green quantum dot and cannot be easily influenced by oxygen gas and moisture.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of quantum dot film and backlight module.
Background technology
Colour gamut is called color space by people usually, represents the concrete condition that a color image can show the color of color space.People are the colour gamut definition of standard in computer monitor application aspect mainly with sRGB, and then in audio-visual what adopt is NTSC definition more.NTSC is responsible for a set of standard television broadcast transmission of exploitation by National Television System Committee (National Television Standards Committee) and receives agreement, contains wider color than sRGB standard.But, presenting of color gamut value size is depended primarily in the selection of backlight.As everyone knows, liquid crystal panel is the light that utilizes backlight to send completely and carries out imaging, but traditional cathode fluorescent tube (CCFL) is owing to being subject to the restriction of fluorescence material, and it is on the weak side that ruddiness presents ability, cause display color gamut value prepared therefrom at most to about 72%NTSC.Colour gamut saturation degree can improve by more senior wide colour gamut backlight lamp tube (W-CCFL), but due to the defect of CCFL self, such as volume is large, power consumption is high, is no longer applicable to the requirement of and environmental protection frivolous to display at present.
The mode that current display and illuminating industry obtain white light LEDs is mainly gold-tinted YAG LED, but be yellow fluorescent powder due to what adopt, it is partially blue to there is color in the white light finally sent, and colour purity is not high, the shortcoming such as the too low and color gamut value of color saturation is too low.Main in addition two kinds obtain white light and improve the method for color gamut value, and one adopts RGB tri-color chip LED, and another kind is that blue chip adds RG fluorescent powder.Although wherein RGB tri-color chip LED can realize high-purity white light, because the RGB tri-color chip life-span is different, especially Green Chip life time decay is the fastest, directly affects the decay of brightness and the variation of colourity.Add for RG fluorescent powder LED for blue chip, increase limited to the colour gamut of display element under identical CF condition, only increase less than 20%NTSC than YAG LED display element.
The quantum dot film technology of rising in recent years effectively can improve color saturation and the color gamut value of display element.What play a crucial role wherein is exactly the redness and green quantum dot of adding in film material, red quantum point in the blue-light excited QD-film sent by blue led makes it send ruddiness and excites green quantum dot to make it send green glow simultaneously, perfectly 100%NTSC can be realized finally by RGB three primary colors, or even >100%NTSC.But, be certain for its light conversion efficiency of identical quantum dot, so the backlight of more high brightness will be expected, the use amount of quantum dot must be increased, and strengthen the output power of blue led, the increase of backlight energy consumption must be caused like this.And the manufacturing cost of quantum dot is very expensive, and most of quantum dot contains the heavy metal element be harmful to people and environmental toxic.Therefore, realizing under high color gamut value prerequisite, reducing the use amount of quantum dot, and ensureing that brightness that final display can reach people's demand is the inexorable trend of QD-film development.
In the quantum dot film (QD-film) that current market is on sale and the patent relevant to QD-film (as CN103228983) the QD-film structure mentioned mainly comprise quantum dot conversion layer and restraining barrier.But for quantum dot, the different corresponding different quantum dot size of glow color.Generally, the quantum dot size of burn red is 5 ~ 6nm, and the quantum dot size of glow green is 2.5 ~ 3nm.The particle diameter of quantum dot reduces, and most of atom is positioned at the surface of quantum dot, and the specific surface area of quantum dot reduces with particle diameter and increases.Due to the specific surface area that nano particle is large, increasing of surperficial phase atomicity, result in the coordination deficiency of surface atom, unsaturated link and outstanding key and increase. make these surface atoms have high activity, extremely unstable, be easy to be combined with other atom.Therefore, quantum dot size is less, and under the same terms, quantum dot stability is poorer.So generally speaking, the impact that be subject to oxygen and aqueous vapor easier than red quantum point of green quantum dot.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of quantum dot film and backlight module, to improve the stability of quantum dot film.
To achieve these goals, according to an aspect of the present invention, provide a kind of quantum dot film, this quantum dot film comprises green quantum dot rete and is arranged at the red quantum point rete of green quantum dot rete both sides.
Further, green quantum dot rete comprises the first adhesive layer and is scattered in the green quantum dot in the first adhesive layer; Red quantum point rete comprises the second adhesive layer and is scattered in the red quantum point in the second adhesive layer.
Further, green quantum dot accounts for the ratio of green quantum dot rete is 0.1wt% ~ 10wt%; The ratio that red quantum point accounts for red quantum point rete is 0.1wt% ~ 10wt%.
Further, the diffusion particle that content is 1 ~ 20wt% is also comprised respectively in green quantum dot rete and red quantum point rete.
Further, the thickness of green quantum dot rete is 70 ~ 90 μm, and the thickness being positioned at the red quantum point rete on arbitrary surface of green quantum dot rete is 5 ~ 15 μm.
Further, quantum dot film also comprises the transparent support rete at least one surface being arranged at green quantum dot rete and/or red quantum point rete.
Further, transparent support rete is positioned on the surface of red quantum point rete away from red quantum point; The surface of transparent support rete has bulge-structure and/or sunk structure, or the surface of transparent support rete away from red quantum point is provided with Diffusion barrier layer, and Diffusion barrier layer contains diffusion particle.
Further, quantum dot membrane structure also comprises and is arranged at red quantum point rete away from Diffusion barrier layer on the surface of red quantum point, and Diffusion barrier layer contains diffusion particle.
Further, quantum dot film also comprises the aqueous vapor barrier layer be covered on Diffusion barrier layer.
According to a further aspect in the invention, provide this backlight module of a kind of backlight module and comprise quantum dot film and exciter component, and quantum dot film is quantum dot film provided by the invention.
Apply technical scheme of the present invention; the present invention by arranging red quantum point rete on two apparent surfaces of green quantum dot rete; can be adequately protected the stability of green quantum dot like this; the impact that green quantum dot is subject to oxygen and aqueous vapor can be reduced to greatest extent; simultaneously red quantum point is because itself is more stable and can not easily be affected by oxygen and aqueous vapor than green quantum dot, and then the stability of raising quantum dot film.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide a further understanding of the present invention, and schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the schematic diagram of the quantum dot film be made up of with the red quantum point rete being arranged at green quantum dot rete both sides green quantum dot rete;
Fig. 2-1 shows by green quantum dot rete, is arranged at the red quantum point rete of green quantum dot rete both sides and is arranged at the schematic diagram of the quantum dot film that the transparent support rete on the surface of a red quantum point rete forms;
Fig. 2-2 shows by green quantum dot rete, is arranged at the transparent support rete on a surface of green quantum dot rete and is arranged at the schematic diagram of the quantum dot film that the red quantum point rete on another surface of green quantum dot rete and the surface of transparent support rete forms;
Fig. 3-1 shows by green quantum dot rete, is arranged at the red quantum point rete of green quantum dot rete both sides and is arranged at the schematic diagram of the quantum dot film that the Diffusion barrier layer on the surface of two red quantum point retes forms; And
Fig. 3-2 show by green quantum dot rete, be arranged at green quantum dot rete both sides red quantum point rete, be arranged at the transparent support rete on the surface of a red quantum point rete and be arranged at the schematic diagram of the quantum dot film that the Diffusion barrier layer on the surface of another red quantum point rete forms.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
From background technology, the quantum dot size of existing burn red is 5 ~ 6nm, and the quantum dot size of glow green is 2.5 ~ 3nm.The particle diameter of quantum dot reduces, and most of atom is positioned at the surface of quantum dot, and the specific surface area of quantum dot reduces with particle diameter and increases.Due to the specific surface area that nano particle is large, increasing of surperficial phase atomicity, result in the coordination deficiency of surface atom, unsaturated link and outstanding key and increase. make these surface atoms have high activity, extremely unstable, be easy to be combined with other atom.Therefore, quantum dot size is less, and under the same terms, quantum dot stability is poorer.So generally speaking, the impact that be subject to oxygen and aqueous vapor easier than red quantum point of green quantum dot, thus cause the less stable of quantum dot film.
The present inventor studies for the problems referred to above, proposes a kind of quantum dot film.As shown in Figure 1, this quantum dot film comprises green quantum dot rete 10 and the red quantum point rete 20 be arranged on two apparent surfaces of green quantum dot rete 10.
The present invention is by arranging red quantum point rete 20 in green quantum dot rete 10 both sides; can be adequately protected the stability of green quantum dot like this; the impact that green quantum dot is subject to oxygen and aqueous vapor can be reduced to greatest extent; simultaneously red quantum point is because itself is more stable and can not easily be affected by oxygen and aqueous vapor than green quantum dot, and then the stability of raising quantum dot film.
Illustrative embodiments according to quantum dot film provided by the invention will be described in more detail below.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to embodiment set forth herein.Should be understood that, provide these embodiments be in order to make the application open thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art.
In quantum dot film of the present invention, all diffusion particle can be contained in each red quantum point rete 20 (QDs layer) and each green quantum dot rete 10 (QDs layer), this diffusion particle mainly plays increases the stroke of light in QDs layer, increases light conversion efficiency.Preferably, the diffusion particle that content is 1 ~ 20wt% is also comprised respectively in green quantum dot rete 10 and red quantum point rete 20.The thickness of green quantum dot rete 10 is preferably 70 ~ 90 μm, and the thickness being positioned at the red quantum point rete 20 on arbitrary surface of green quantum dot rete 10 is preferably 5 ~ 15 μm.
Preferably, green quantum dot rete 10 comprises the first adhesive layer and is scattered in the green quantum dot in the first adhesive layer; Red quantum point rete 20 comprises the second adhesive layer and is scattered in the red quantum point in the second adhesive layer.The part by weight that the weight of green quantum dot accounts for green quantum dot rete 10 is preferably 0.1wt% ~ 10wt%; The part by weight that the weight of red quantum point accounts for red quantum point rete 20 is preferably 0.1wt% ~ 10wt%.In QDs layer, main gel material adopts the material of high obstructing performance.This material is formed primarily of the low polarity oligomer of high-crosslinking-degree, low polar monomer and initiating agent.
Meanwhile, the mechanical property in order to better increase quantum dot rete can add layer of transparent supporting layer, as shown in Fig. 2-1 and Fig. 2-2 on QDs layer surface.In addition, in order to increase blue light utilization factor, the diffusion layer of painting containing diffusion particle can be added to improve blue light utilization factor at QDs extexine, when clear support layer is at outside surface, can adopt and there is the supporting layer of the concrete structure of microstructure to increase blue light utilization factor, as shown in Fig. 3-1 and 3-2 from atomization or surface.Preferably, quantum dot film also comprises the transparent support rete 30 at least one surface being arranged at green quantum dot rete 10 and/or red quantum point rete 20.
Preferably, above-mentioned transparent support rete 30 is positioned on the surface of red quantum point rete 20 away from red quantum point; The surface of transparent support rete 30 has bulge-structure and/or sunk structure, or the surface of transparent support rete 30 away from red quantum point is provided with Diffusion barrier layer 40, and Diffusion barrier layer 40 is containing diffusion particle.
In a preferred embodiment, quantum dot membrane structure also comprises and is arranged at red quantum point rete 20 away from Diffusion barrier layer 40 on the surface of red quantum point, and Diffusion barrier layer 40 is containing diffusion particle.Quantum dot film also comprises the aqueous vapor barrier layer be covered on Diffusion barrier layer 40.
According to a further aspect in the invention, provide this backlight module of a kind of backlight module and comprise quantum dot film and exciter component, and quantum dot film is quantum dot film provided by the invention.
Quantum dot film provided by the invention and backlight module is further illustrated below in conjunction with embodiment.
Embodiment 1
The red quantum point of the monomer of the low polarity oligomer of 50 weight portions, 35 weight portions, the initiating agent of 4 weight portions, the diffusion particle of 10 weight portions and 0.2 weight portion and the green quantum dot of 0.8 weight portion are added in container stir, glue mixture is coated with 100 μm and thickly solidifies to PET.This quantum dot film material 100 μm is thick.With 450nm wavelength, 300mW/cm
2this quantum dot film is positioned over 65 DEG C, 200h in 95%RH environment after the Blue backlight test membrane material initial luminance of power and chromaticity coordinates, again tests briliancy and chromaticity coordinates.The rate of change of briliancy and chromaticity coordinates after calculating 200h.
Embodiment 2
Step 1, is added to the red quantum point of the monomer of the low polarity oligomer of 50 weight portions, 35 weight portions, the initiating agent of 4 weight portions, the diffusion particle of 10 weight portions and 1 weight portion in container and stirs.Step 2, is added to the green quantum dot of the monomer of the low polarity oligomer of 50 weight portions, 35 weight portions, the initiating agent of 4 weight portions, the diffusion particle of 10 weight portions and 1 weight portion in container and stirs.Step 1 glue mixture is coated with 10 μm thickly to solidify to PET, then thereon step 2 glue mixture is coated with 80 μm thick and solidify, finally again step 1 glue mixture to be coated with 10 μm thick and solidify.Quantum dot film material total thickness is 100 μm.With 450nm wavelength, after the Blue backlight test membrane material initial luminance of 300mW/cm2 power and chromaticity coordinates, this quantum dot film is positioned over 65 DEG C, 200h in 95%RH environment, again tests the rate of change that briliancy and chromaticity coordinates calculate briliancy and chromaticity coordinates after 200h.Concrete test data is as following table 1.
Table 1
| Item | CIE-x rate of change | CIE-y rate of change | Luminance variations rate |
| Embodiment 1 | -5.5％ | -10.3％ | -19.7％ |
| Embodiment 2 | -6.3％ | -6.7％ | -10.3％ |
As can be seen from the test data in table 1, quantum dot film is prepared in red green quantum dot layering, the stability of the green quantum dot that can adequately protect, and the briliancy stability of film material entirety can be improved
As can be seen from the above embodiments; the above-mentioned example of the present invention achieves following technique effect: the present invention by arranging red quantum point rete on two apparent surfaces of green quantum dot rete; can be adequately protected the stability of green quantum dot like this; the impact that green quantum dot is subject to oxygen and aqueous vapor can be reduced to greatest extent; simultaneously red quantum point is because itself is more stable and can not easily be affected by oxygen and aqueous vapor than green quantum dot, and then the stability of raising quantum dot film.
These are only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a quantum dot film, is characterized in that, described quantum dot film comprises green quantum dot rete (10) and is arranged at red quantum point rete (20) of described green quantum dot rete (10) both sides.
2. quantum dot film according to claim 1, is characterized in that, described green quantum dot rete (10) comprises the first adhesive layer and is scattered in the green quantum dot in described first adhesive layer; Described red quantum point rete (20) comprises the second adhesive layer and is scattered in the red quantum point in described second adhesive layer.
3. quantum dot film according to claim 2, is characterized in that, the ratio that described green quantum dot accounts for described green quantum dot rete (10) is 0.1wt% ~ 10wt%; The ratio that described red quantum point accounts for described red quantum point rete (20) is 0.1wt% ~ 10wt%.
4. quantum dot film according to claim 2, is characterized in that, also comprises the diffusion particle that content is 1 ~ 20wt% respectively in described green quantum dot rete (10) and described red quantum point rete (20).
5. quantum dot film according to claim 1, it is characterized in that, the thickness of described green quantum dot rete (10) is 70 ~ 90 μm, and the thickness being positioned at described red quantum point rete (20) on arbitrary surface of described green quantum dot rete (10) is 5 ~ 15 μm.
6. quantum dot film according to claim 1, it is characterized in that, described quantum dot film also comprises the transparent support rete (30) at least one surface being arranged at described green quantum dot rete (10) and/or described red quantum point rete (20).
7. quantum dot film according to claim 6, is characterized in that, described transparent support rete (30) is positioned on the surface of described red quantum point rete (20) away from described red quantum point; The surface of described transparent support rete (30) has bulge-structure and/or sunk structure, or the surface away from described red quantum point is provided with Diffusion barrier layer (40) to described transparent support rete (30), and described Diffusion barrier layer (40) is containing diffusion particle.
8. quantum dot film according to claim 1, it is characterized in that, described quantum dot membrane structure also comprises and is arranged at described red quantum point rete (20) away from Diffusion barrier layer (40) on the surface of described red quantum point, and described Diffusion barrier layer (40) is containing diffusion particle.
9. the quantum dot film according to claim 7 or 8, is characterized in that, described quantum dot film also comprises the aqueous vapor barrier layer be covered on described Diffusion barrier layer (40).
10. a backlight module, is characterized in that, described backlight module comprises quantum dot film and exciter component, and the quantum dot film of described quantum dot film according to any one of claim 1 to 9.
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| CN105259601A (en) * | 2015-11-10 | 2016-01-20 | 合肥乐凯科技产业有限公司 | Multi-layer quantum dot film and backlight module group |
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| CN110277481A (en) * | 2019-07-18 | 2019-09-24 | 衡山县佳诚新材料有限公司 | A kind of scratch resistant and water resistant oxygen quantum dot film |
| US10473976B2 (en) | 2016-02-26 | 2019-11-12 | Boe Technology Group Co., Ltd. | Backlight assembly and display apparatus |
| CN110865482A (en) * | 2018-08-27 | 2020-03-06 | 东友精细化工有限公司 | Color filter and image display device including the same |
| CN111226144A (en) * | 2017-10-16 | 2020-06-02 | Ns材料株式会社 | Quantum dot-containing resin sheet or film, method for producing same, and wavelength conversion member |
| CN111650678A (en) * | 2020-06-29 | 2020-09-11 | 苏州龙桥光电有限公司 | High-brightness quantum dot film |
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