CN109360906B - Method of manufacturing organic light emitting display device - Google Patents

Method of manufacturing organic light emitting display device Download PDF

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Publication number
CN109360906B
CN109360906B CN201811067225.3A CN201811067225A CN109360906B CN 109360906 B CN109360906 B CN 109360906B CN 201811067225 A CN201811067225 A CN 201811067225A CN 109360906 B CN109360906 B CN 109360906B
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flexible substrate
manufacturing
organic light
light emitting
photosensitive material
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CN201811067225.3A
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CN109360906A (en
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杨阳
古春笑
刘成
崔永鑫
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Yungu Guan Technology Co Ltd
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Yungu Guan Technology Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1262Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The present application provides a method of manufacturing an organic light emitting display device. Wherein the manufacturing method comprises: forming a flexible substrate containing a photosensitive material on a carrier substrate; forming a thin film transistor on a flexible substrate; forming a functional film layer on the thin film transistor; and exposing the flexible substrate. In this application, through adding photosensitive material in flexible substrate to expose photosensitive material and make photosensitive material's molecular chain schizolysis, make flexible substrate soften, flexible substrate can absorb most stress of buckling when buckling, thereby reduce the stress that the function rete receives, reduce the risk that the function rete separates or splits.

Description

Method of manufacturing organic light emitting display device
Technical Field
The present disclosure relates to a display device, and more particularly, to a method for manufacturing an organic light emitting display device.
Background
An organic light emitting display apparatus is a self-light emitting device using a thin film emission layer between electrodes, and thus the entire device can be made thinner. In addition, the organic light emitting diode device has advantages not only in power consumption of low voltage driving but also in color realization, response speed, viewing angle, and contrast.
While flexible organic display devices, which are manufactured to form a display unit and a conductive line on a substrate, which exhibits flexibility, such as a flexible material (e.g., plastic), thereby displaying an image even when bent like paper, are receiving wide attention as next-generation display devices. When the display device is bent, because the stress concentration cannot be released, some film layers may be separated or broken, causing partial failure or total failure, and affecting the display effect and the service life of the flexible display device.
Disclosure of Invention
The application provides a manufacturing method of a flexible organic light-emitting display device, which can effectively reduce stress on a functional film layer during bending.
The present application provides a method of manufacturing an organic light emitting display device, the method including: forming a flexible substrate containing a photosensitive material on a carrier substrate; forming a thin film transistor on a flexible substrate; forming a functional film layer on the thin film transistor; and exposing the flexible substrate to crack the molecular chains of the photosensitive material.
Further, forming a flexible substrate containing a photosensitive material on a carrier substrate includes: adding a photosensitive material into the polymer solution; coating a polymer solution containing a photosensitive material on a carrier substrate; and curing the polymer solution on the bearing substrate to form the flexible substrate.
Further, the photosensitive material includes a photoresist.
Furthermore, the mass percentage of the photosensitive material in the flexible substrate is 0.5-3%.
Further, the manufacturing method further includes: before the polymer solution is coated on the bearing substrate, the polymer solution is stirred, so that the photosensitive material is uniformly distributed in the polymer solution.
Further, exposing the flexible substrate includes: and exposing the surface of the flexible substrate, which is opposite to the functional film layer, by using light with the wavelength range of 365-410 nm.
Further, exposing the flexible substrate includes: and locally exposing the surface of the flexible substrate, which is back to the functional film layer.
Further, the locally exposing the surface of the flexible substrate, which is opposite to the functional film layer, includes: covering the optical mask on the surface of the flexible substrate back to the functional film layer, and adopting light with the wavelength range of 365-410nm to penetrate through the light-transmitting area of the mask to locally expose the surface of the flexible substrate back to the functional film layer.
Further, the manufacturing method includes: before the flexible substrate is exposed, the bearing substrate is stripped.
Further, the manufacturing method includes: and after the bearing substrate is stripped, carrying out module assembly on the structure consisting of the flexible substrate, the thin film transistor and the functional film layer, and exposing the flexible substrate after the module assembly is finished.
The application also provides an organic light-emitting display device, which comprises a flexible substrate, a thin film transistor and a functional film layer, wherein the flexible substrate comprises a photosensitive material with a molecular chain cracked after exposure; the thin film transistor is formed on the flexible substrate; and the functional film layer is formed on the thin film transistor.
In this application, through adding photosensitive material in flexible substrate to expose photosensitive material and make photosensitive material's molecular chain schizolysis, make flexible substrate soften, flexible substrate can absorb most stress of buckling when buckling, thereby reduce the stress that the function rete receives, reduce the risk that the function rete separates or splits.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of an organic light emitting display device of the present application;
fig. 2 is a flowchart illustrating a method of manufacturing the organic light emitting display apparatus shown in fig. 1;
FIG. 3 is a schematic structural diagram illustrating a flexible substrate formed on a carrier substrate;
fig. 4 is a schematic structural view showing a thin film transistor formed over a flexible substrate;
fig. 5 is a schematic structural view illustrating a first electrode formed on the thin film transistor;
FIG. 6 is a schematic structural diagram of a pixel defining layer formed on a first electrode;
FIG. 7 is a schematic structural view showing the formation of an organic light-emitting layer in an opening of a pixel defining layer;
fig. 8 is a schematic structural view showing a second electrode formed on the organic light emitting layer.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus consistent with certain aspects of the present application, as detailed in the appended claims.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the description and in the claims does not indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Also, the use of the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. "plurality" or "a number" means two or more. The word "comprising" or "comprises", and the like, means that the element or item listed as preceding "comprising" or "includes" covers the element or item listed as following "comprising" or "includes" and its equivalents, and does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. As used in this specification and the appended claims, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
Referring to fig. 1, an organic light emitting display device according to an embodiment of the present disclosure includes a flexible substrate 2 disposed on a carrier substrate 1, a thin film transistor 6 disposed on the flexible substrate 2, and a functional film layer formed on the thin film transistor 6. The carrier substrate 1 can be peeled off after the assembly is completed. The functional film layer comprises a first electrode 3 arranged on the thin film transistor 6 and electrically connected with the thin film transistor 6, an organic light-emitting layer 4 arranged on the first electrode, and a second electrode 5 arranged on the organic light-emitting layer. Of course, the organic light emitting display device further includes a hole injection layer, a hole transport layer, an electron injection layer, and an encapsulation film layer, where the hole injection layer and the hole transport layer are located between the first electrode 3 and the organic light emitting layer 4, and the electron transport layer and the electron injection layer are located between the light emitting layer 4 and the second electrode 5. When a proper voltage is applied to the organic light emitting display device, the positive electrode holes and the cathode charges are combined in the organic light emitting layer 4 to generate light, and the three primary colors of red, green and blue RGB are generated according to the formula to form basic colors.
The flexible substrate 2 contains photosensitive materials, and the photosensitive materials are distributed in the inner part and the surface layer of the flexible substrate. The photosensitive material can crack molecular chains after exposure, and large molecules are changed into small molecules, so that the flexible substrate 2 is integrally softened. When the organic light emitting display device is bent, the flexible substrate 2 can absorb large stress and reduce stress borne by the functional film layer, so that the functional film layer is prevented from being broken or separated from the flexible substrate 2 due to overlarge stress.
Referring to fig. 2, a method of fabricating the organic light emitting display device is described as follows, the method including:
s1: a flexible substrate 2 containing a photosensitive material is formed on a carrier substrate 1.
Wherein, the bearing substrate can be a glass substrate.
Referring to fig. 3, step S1 in this embodiment includes:
adding a photosensitive material into the polymer solution;
coating a polymer solution containing a photosensitive material on a carrier substrate 1;
the polymer solution on the carrier substrate 1 is cured to form the flexible substrate 2.
The polymer may be one or more of PEN (polyethylene naphthalate), (PET polyethylene terephthalate), PI (polyimide), PES (polyethersulfone resin), PC (polycarbonate), PEI (polyetherimide). In this example, PI is used as the polymer.
The photosensitive material can be selected from photoresist. Of course, other photosensitive materials can be used as the photosensitive material, as long as the material is ensured to have molecular chain cleavage reaction under the irradiation of light with specific wavelength (for example, 365-. The mass percentage of the photosensitive material in the flexible substrate is 0.5-3%, or the mass percentage of the photosensitive material in the whole body formed by the solute of the polymer solution and the photosensitive material is 0.5-3%. This content range has less influence of the photosensitive material on the mechanical properties of the flexible substrate 2 than other ranges, and causes the flexible substrate 2 to be moderately softened after exposure. In a reliability test of an organic light emitting display device, excellent test results can be obtained. For example, in the test with the bending radius of 5R (the minimum bending radius of 3R) and the bending rate of 30rpm (cycles/Minute), the test can endure more than 60000 times of bending without causing the separation or rupture of the functional film.
Alternatively, before the polymer solution is coated on the carrier substrate 1, the polymer solution is stirred to uniformly distribute the photosensitive material in the polymer solution. After the flexible substrate 2 is formed, the photosensitive material is uniformly distributed in the flexible substrate 2, so that the softening degree of different parts of the flexible substrate 2 is similar, the absorbed stress is uniform during bending, and the separation of the functional film layer and the flexible substrate 2 caused by nonuniform stress is avoided.
S2: a thin film transistor 6 is formed on the flexible substrate 2.
Referring to fig. 4, the thin film transistor 6 may be formed by depositing and etching a plurality of layers on the flexible substrate 2. The thin film transistor 6 may be formed to include a gate, a source, a drain, etc.
S3: a functional film layer is formed on the thin film transistor 6. Referring to fig. 5 to 8, a first electrode 3, a pixel defining layer 7, an organic light emitting layer 4, and a second electrode 5 are sequentially formed on the flexible substrate 2, wherein the first electrode 3 is electrically connected to the thin film transistor 6.
In one embodiment, a first electrode layer is formed on the thin film transistor 6, the first electrode layer is electrically connected to the thin film transistor 6, and then the first electrode layer is separated into a plurality of first electrodes 3 (e.g., anodes) through a patterning process. The patterning process is, for example, a patterning process including, for example, a process of coating, exposing, developing, etching, and/or stripping of a photoresist, or a printing process.
Thereafter, a pixel defining material is deposited on the first electrode 3, and then a pixel defining layer 7 having a plurality of pixel openings 71 is formed by etching the pixel defining material. The pixel openings are filled with an organic light emitting material to form the organic light emitting layer 4. The organic light emitting layer 4 may also cover partial areas of the pixel defining layer on both sides of the pixel opening 71.
In addition to the organic light emitting layer 4, a hole injection layer, a hole transport layer, an electron injection layer, etc. may be filled in the pixel opening, which is not described herein again.
Then, the second electrode 5 is formed on the organic light emitting layer 4. The second electrode 5, for example, a cathode, may not be patterned, and may be formed as a continuous layer on the organic light emitting layer 4.
S4: the carrier substrate 1 is peeled off. After the functional film layer is formed, the carrier substrate 1 may be detached from the flexible substrate 2 by a laser lift-off technique.
S5: and assembling the module. And assembling a structure consisting of the flexible substrate 2, the thin film transistor 6 and the functional film layer with elements such as a circuit board, an outer frame and the like to form the organic light-emitting display device.
S6: and exposing the flexible substrate 2, wherein the wavelength range of the irradiating light for exposure is 365-410nm, the irradiating light enables the molecular chain of the photosensitive material to be cracked, the macromolecules are changed into micromolecules, and the flexible substrate 2 is wholly or partially softened. When the organic light emitting display device is bent, the flexible substrate 2 may absorb most of the bending stress, reducing the risk of separation or fracture of the functional film layer.
After the thin film transistor 6 and the functional film layer are formed, the flexible substrate 2 is exposed, molecular chains in the flexible substrate 2 are cracked, the molecular chains comprise a region close to one side of the functional film layer, macromolecules of the photosensitive material in the region are changed into small molecules after reaction, and therefore the bonding stress between the photosensitive material and the thin film transistor and between the photosensitive material and the functional film layer is dispersed due to the conversion from the macromolecules to the small molecules. If the flexible substrate 2 is exposed before the thin film transistor 6 and the functional film are formed, the processes of splitting the molecular chain of the photosensitive material and softening the flexible substrate 2 cannot be directly conducted to the thin film transistor 6 and the functional film, so that the bonding stress between the flexible substrate 2 and the thin film transistor 6 and the functional film is difficult to reduce.
In other embodiments, the process of peeling the carrier substrate 1 and assembling the module may be performed after the exposure of the flexible substrate 2.
Alternatively, the surface of the flexible substrate 2 opposite to the functional film layer (which may also be referred to as the lower surface of the flexible substrate 2) is exposed. Irradiating light through the supporting substrate 1 (e.g., a glass substrate) to expose the flexible substrate 2 before peeling the supporting substrate 1; or after peeling the carrier substrate 1, the flexible substrate 2 is exposed by directly irradiating the lower surface of the flexible substrate 2 with irradiation light (shown in fig. 8), so that the molecular chains of the photosensitive material are cleaved.
The exposure can be selected from a full exposure or a partial exposure, and referring to fig. 8, in an embodiment, a partial area of the flexible substrate 2 is used for mounting with a frame, a housing or other components, which requires a certain rigidity of the partial area, and in this embodiment, only a part outside the partial area can be exposed.
In this embodiment, local exposure may be achieved by the optical reticle 8. For example, the optical mask 8 may cover the lower surface of the flexible substrate 2 opposite to the functional film, and a portion of the photosensitive material in the flexible substrate is exposed by passing light with a wavelength of 365-410nm through the light-transmitting region 81 of the optical mask 8, so as to locally soften the flexible substrate 2. This part can absorb a large bending stress when bent.
In this application, through adding photosensitive material in flexible substrate to expose photosensitive material and make photosensitive material's molecular chain schizolysis, make flexible substrate soften, flexible substrate can absorb most stress of buckling when buckling, thereby reduce the stress that the function rete receives, reduce the risk that the function rete separates or splits.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the scope of protection of the present application.

Claims (10)

1. A method of manufacturing an organic light emitting display device, characterized in that: the manufacturing method comprises the following steps:
forming a flexible substrate (2) containing a photosensitive material on a carrier substrate (1);
forming a thin film transistor (6) on a flexible substrate (2);
forming a functional film layer on the thin film transistor (6);
the flexible substrate (2) is exposed to a light to cleave the molecular chains of the photosensitive material.
2. The method of manufacturing an organic light emitting display device according to claim 1, wherein:
forming a flexible substrate (2) containing a photosensitive material on a carrier substrate (1), comprising:
adding a photosensitive material into the polymer solution;
coating a polymer solution containing a photosensitive material on a carrier substrate (1);
and solidifying the polymer solution on the bearing substrate to form the flexible substrate (2).
3. The method of manufacturing an organic light emitting display device according to claim 2, wherein: the photosensitive material comprises photoresist.
4. The method of manufacturing an organic light emitting display device according to claim 2, wherein: the mass percentage of the photosensitive material in the flexible substrate is 0.5-3%.
5. The method of manufacturing an organic light emitting display device according to claim 4, wherein: the manufacturing method further includes:
before the polymer solution is coated on the bearing substrate (1), the polymer solution is stirred, so that the photosensitive material is uniformly distributed in the polymer solution.
6. The method of manufacturing an organic light emitting display device according to claim 1, wherein: exposing a flexible substrate (2) comprising:
and exposing the surface of the flexible substrate (2) opposite to the functional film layer by using light with the wavelength range of 365-410 nm.
7. The method of manufacturing an organic light emitting display device according to claim 1, wherein: exposing a flexible substrate (2) comprising:
and locally exposing the surface of the flexible substrate (2) back to the functional film layer.
8. The method of manufacturing an organic light emitting display device according to claim 7, wherein: the local exposure of the surface of the flexible substrate (2) facing away from the functional film layer comprises:
covering the surface of the flexible substrate (2) opposite to the functional film layer with an optical mask (8), and locally exposing the surface of the flexible substrate (2) opposite to the functional film layer by adopting light with the wavelength range of 365-410nm to penetrate through a light transmitting area (81) of the mask.
9. The method of manufacturing an organic light emitting display device according to claim 1, wherein: the manufacturing method comprises the following steps:
before the flexible substrate (2) is exposed, the carrier substrate (1) and the flexible substrate (2) are peeled off.
10. The method of manufacturing an organic light emitting display device according to claim 9, wherein: the manufacturing method comprises the following steps:
after the bearing substrate (1) is stripped, module assembly is carried out on a structure formed by the flexible substrate (2), the thin film transistor (6) and the functional film layer, and the flexible substrate (2) is exposed after the module assembly is completed.
CN201811067225.3A 2018-09-13 2018-09-13 Method of manufacturing organic light emitting display device Active CN109360906B (en)

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