CN109346502A - A kind of WOLED backboard and preparation method thereof - Google Patents
A kind of WOLED backboard and preparation method thereof Download PDFInfo
- Publication number
- CN109346502A CN109346502A CN201811110311.8A CN201811110311A CN109346502A CN 109346502 A CN109346502 A CN 109346502A CN 201811110311 A CN201811110311 A CN 201811110311A CN 109346502 A CN109346502 A CN 109346502A
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- layer
- color film
- son
- film unit
- woled
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
The application provides a kind of WOLED backboard and preparation method thereof, and the WOLED backboard includes: substrate；Bottom film transistor layer is prepared on the substrate；Color film is prepared on the bottom film transistor layer, and the coloured silk film includes the color film unit of son being spaced apart；And flatness layer, it is prepared on the color film, and the interval location setting between the adjacent two color film unit of son of correspondence is fluted；Anode, the corresponding color film unit of son are prepared on the flatness layer；The position of pixel defining layer, the corresponding groove is prepared on the flatness layer, and defines pixel region；Wherein, the material of the pixel defining layer is light absorbent.
Description
Technical field
This application involves field of display technology more particularly to a kind of WOLED backboard and preparation method thereof.
Background technique
With the continuous improvement of backboard resolution, spacing constantly reduces between pixel quantity and sub-pixel, for bottom emitting type
When WOLED (COA) shines, light is needed through flatness layer and R/G/B coloured silk film, since the shine flatness layer of WOLED of bottom is usually
High-penetration organic material, the polytropism that light is propagated, frequently can lead to not need luminous pixel due to adjacent pixel light emission
And shine, show as light leakage.
Therefore, the prior art is defective, needs to improve.
Summary of the invention
The application provides a kind of WOLED backboard and preparation method thereof, is able to solve pixel and leads to the problem of light leakage.
To solve the above problems, technical solution provided by the present application is as follows:
The application provides a kind of preparation method of WOLED backboard, the described method comprises the following steps:
Step S10 provides a substrate for being formed with bottom film transistor layer, the shape on the bottom film transistor layer
At patterned color film, the coloured silk film includes that corresponding sub-pixel is in the color film unit of son being spaced apart；
Step S20 forms flatness layer on the color film, and patterns to the flatness layer, and it is adjacent to form correspondence
The groove of interval location between the two color film units of son；
Step S30 forms the patterned anode of the corresponding color film unit of the son on the flat laye；
Step S40 forms patterned pixel defining layer in the groove location, and the pixel defining layer defines pixel
Region, wherein the material of the pixel defining layer is light absorbent.
In the preparation method of the WOLED backboard of the application, the color film unit of son includes red color film unit, green tint
Film unit and blue color film unit.
In the preparation method of the WOLED backboard of the application, the flatness layer includes that region and part is fully retained to retain
Region, the flatness layer that region is fully retained described in correspondence in the patterning process in the step S20 carry out completely
It blocks, half-exposure is carried out the flatness layer that the correspondence part retains region.
In the preparation method of the WOLED backboard of the application, the described of the flatness layer is fully retained described in the correspondence of region
Sub- coloured silk film unit, part reservation region correspond to the interval location between the adjacent two color film units of son.
In the preparation method of the WOLED backboard of the application, after the step S40, the method also includes following
Step:
Step S50 forms organic luminous layer in the pixel region；
Step S60 forms cathode layer on the organic luminous layer.
To solve the above problems, the application also provides a kind of WOLED backboard, comprising:
Substrate；
Bottom film transistor layer is prepared on the substrate；
Color film is prepared on the bottom film transistor layer, and the coloured silk film includes the color film unit of son being spaced apart；With
And
Flatness layer is prepared on the color film, and the gap digit between the adjacent two color film unit of son of correspondence installs
It is equipped with groove；
Anode, the corresponding color film unit array of son are prepared on the flatness layer；
The position of pixel defining layer, the corresponding groove is prepared on the flatness layer, and defines pixel region；
Wherein, the material of the pixel defining layer is light absorbent.
In the WOLED backboard of the application, separated between the groove and the color film unit of the son with the flatness layer.
In the WOLED backboard of the application, the anode is located at the flatness layer and corresponds between adjacent two groove
Position, and expose the groove.
In the WOLED backboard of the application, the pixel defining layer includes insertion section and spacer portion, the insertion section insertion
Into the groove, the spacer portion protrudes the flatness layer and is spaced apart adjacent two pixel region.
In the WOLED backboard of the application, the spacer portion extends to the edge of the anode.
The application's has the beneficial effect that compared to existing WOLED backboard, WOLED backboard provided by the present application and its system
Groove is arranged by corresponding to the interval location between the color film units of adjacent two son on flatness layer in Preparation Method, and by light absorbent
Pixel defining layer insertion section insertion in the groove so that the inside for the flatness layer being set on color film passes through light absorbent
The color film unit of different sons is spaced apart, so as to avoid light leakage or colour mixture is led to the problem of between different pixels.In addition, the insertion section
It is to be obtained by the design to pixel defining layer, therefore do not have to the processing procedure in addition increasing insertion section.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of application
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the preparation method flow chart of WOLED backboard provided by the embodiments of the present application；
Fig. 2A~2D is the preparation process schematic diagram of WOLED backboard provided by the embodiments of the present application；
Fig. 3 is WOLED back board structure schematic diagram provided by the embodiments of the present application.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the application
Example.The direction term that the application is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the application, rather than to
Limit the application.The similar unit of structure is with being given the same reference numerals in the figure.
The application is directed to the WOLED backboard of the prior art, there is technical issues that generate between adjacent pixel light leakage or,
The present embodiment is able to solve the defect.
As shown in Figure 1, being the preparation method flow chart of WOLED backboard provided by the embodiments of the present application.In conjunction with Fig. 2A~2D
It is shown, it is the preparation process schematic diagram of WOLED backboard provided by the embodiments of the present application.It the described method comprises the following steps:
Step S10 provides a substrate for being formed with bottom film transistor layer, the shape on the bottom film transistor layer
At patterned color film, the coloured silk film includes that corresponding sub-pixel is in the color film unit of son being spaced apart.
It is specific as shown in Figure 2 A, bottom film transistor layer 202 is formed on substrate 201；It is brilliant in the bottom film
Patterned color film 203 is formed in body tube layer 202.Wherein, the color film 203 includes the color film unit 203A of son, and adjacent two institute
It states between sub color film unit 203A and there is interval 203B.The son coloured silk film unit 203A includes but is not limited to the color film list of red son
Member, the color film unit of green and the color film unit of blue.
Step S20 forms flatness layer on the color film, and patterns to the flatness layer, and it is adjacent to form correspondence
The groove of interval location between the two color film units of son.
In conjunction with shown in Fig. 2 B, flatness layer 204 is formed on the color film 203, the flatness layer 204 is patterned,
The flatness layer 204 includes that region 204B and part reservation region 204C, the complete guarantor of the flatness layer 204 is fully retained
Region 204B is stayed to correspond to the color film unit 203A of the son, the part retains region 204C and corresponds to the adjacent two color film unit of son
The position the interval 203B between 203A.The described flat of region 204B is fully retained described in correspondence in patterning process
Layer 204 is blocked completely, carries out half-exposure the flatness layer 204 that the correspondence part retains region 204C.Patterning
Later, the groove 204A of the corresponding interval position 203B is formed.
In one embodiment, the groove 204A can be the fenestral fabric of the color film unit 203A of the encirclement son.
Step S30 forms the patterned anode of the corresponding color film unit of the son on the flat laye.
In conjunction with shown in Fig. 2 C, anode metal layer, shape after the anode metal pattern layers are prepared on the flatness layer 204
At the anode 205 of the color film unit 203A of multiple correspondences son, the anode 205 exposes the groove 204A.
Step S40 forms patterned pixel defining layer in the groove location, and the pixel defining layer defines pixel
Region, wherein the material of the pixel defining layer is light absorbent.
In conjunction with shown in Fig. 2 D, patterned pixel defining layer 206, the pixel defining layer are formed on the anode 205
206 use black light-absorbing material, and are located at the position of the groove 204A, and the pixel defining layer 206 defines pixel region
207。
After the step S40, the method also includes following steps:
Step S50 forms organic luminous layer in the pixel region；
Step S60 forms cathode layer on the organic luminous layer.
Wherein, the luminous organic material for forming the organic luminous layer can be evaporation material, is also possible to printing and shines
Material.The corresponding pixel defining layer 206 is respectively conventional non-hydrophobic material and hydrophobic material.
The present embodiment is since the pixel defining layer can not only define the pixel region, but also can be used as adjacent two institute
The shading column between sub color film unit is stated, so that the inside for the flatness layer being set on color film is color by the different sons by light absorbent
Film unit is spaced apart, so as to avoid light leakage or colour mixture is led to the problem of between different pixels.
The application also provides a kind of WOLED backboard, as shown in figure 3, the WOLED backboard includes: substrate 301；Bottom thin
Film transistor layer 302 is prepared on the substrate 301；Color film 303 is prepared on the bottom film transistor layer 302, institute
Stating color film 303 includes the color film unit 303A of son being spaced apart；Flatness layer 304 is prepared on the color film 303, and in correspondence
Fluted 304A is arranged in the position of interval 303B between the adjacent two color film unit 303A of son；Anode 305, the corresponding son
Color film unit 303A is prepared on the flatness layer 304；The anode 305 is located at described in the flatness layer 304 corresponding adjacent two
Position between groove 304A, so that exposing the groove 304A；Patterned pixel defining layer 306, the corresponding groove
The position of 304A is prepared on the flatness layer 304, and defines pixel region 307；Wherein, the pixel defining layer 306
Material is light absorbent；Organic luminous layer can be prepared in the pixel region 307, be prepared with cathode on the organic luminous layer
Layer.
It is separated between the groove 304A and the color film unit 303A of the son with the flatness layer 304.The groove 304A
Groove depth, size can design according to actual needs, can use halftone mask processing procedure, be also possible to common optical cover process.
The pixel defining layer 306 includes that insertion section 306A and spacer portion 306B, the insertion section 306A are inserted into described
In groove 304A, the spacer portion 306B protrudes the flatness layer 304 and is spaced apart adjacent two pixel region 307.Institute
It states insertion section 306A and the spacer portion 306B designs for integral type, the portion that the spacer portion 306B is contacted with the anode 305
Position extends to the edge of the anode 305.It avoids being formed between the pixel defining layer 306 and the anode 305 with this
Gap is to generate light leakage.The WOLED backboard can also be including other conventional films, such as thin-film encapsulation layer etc., herein not
It repeats again.
In a kind of embodiment of the application, the color film unit of the including but not limited to red son of the son coloured silk film unit 303A,
The green color film unit of son and the color film unit of blue son.
The material of the pixel defining layer 306 of the application is the material extremely low to light transmission rate, can play light blocking effect,
Specifically with no restrictions.
In embodiments herein, as shown by arrows in figure, anode 305 and the flatness layer described in light light transmission
The coloured silk film unit 303A of son described in 304 directives, since the flatness layer 304 that bottom shines is usually high-penetration organic material, and by
It in the polytropism that light is propagated, frequently can lead to not need luminous pixel to shine due to adjacent pixel light emission, show
Light leakage or mixed color phenomenon.The application is by the design to the pixel defining layer 306, so that the institute of the pixel defining layer 306
It states insertion section 306A to be located in the flatness layer 304, and is located between the adjacent two color film unit 303A of son, it can be effective
Will enter the flatness layer 304 and the light of the adjacent color film unit 303A of son of directive shelter from, to avoid adjacent picture
The phenomenon that light leakage or colour mixture are generated between element.
Although above preferred embodiment is not to limit in conclusion the application is disclosed above with preferred embodiment
The application processed, those skilled in the art are not departing from spirit and scope, can make various changes and profit
Decorations, therefore the protection scope of the application subjects to the scope of the claims.
Claims (10)
1. a kind of preparation method of WOLED backboard, which is characterized in that the described method comprises the following steps:
Step S10 provides a substrate for being formed with bottom film transistor layer, and figure is formed on the bottom film transistor layer
The color film of case, the coloured silk film include that corresponding sub-pixel is in the color film unit of son being spaced apart；
Step S20 forms flatness layer on the color film, and patterns to the flatness layer, forms corresponding adjacent two institute
State the groove of interval location between sub color film unit；
Step S30 forms the patterned anode of the corresponding color film unit of the son on the flat laye；
Step S40 forms patterned pixel defining layer in the groove location, and the pixel defining layer defines pixel region
Domain, wherein the material of the pixel defining layer is light absorbent.
2. preparation method according to claim 1, which is characterized in that the color film unit of son include red color film unit,
Green tint film unit and blue color film unit.
3. preparation method according to claim 1, which is characterized in that the flatness layer includes that region and part is fully retained
Retain region, the flatness layer that region is fully retained described in correspondence in the patterning process in the step S20 carries out
It blocks completely, half-exposure is carried out the flatness layer that the correspondence part retains region.
4. preparation method according to claim 3, which is characterized in that the region that is fully retained of the flatness layer corresponds to
The color film unit of son, part reservation region correspond to the interval location between the adjacent two color film units of son.
5. preparation method according to claim 1, which is characterized in that after the step S40, the method also includes
Following steps:
Step S50 forms organic luminous layer in the pixel region；
Step S60 forms cathode layer on the organic luminous layer.
6. a kind of WOLED backboard characterized by comprising
Substrate；
Bottom film transistor layer is prepared on the substrate；
Color film is prepared on the bottom film transistor layer, and the coloured silk film includes the color film unit of son being spaced apart；And
Flatness layer is prepared on the color film, and the interval location between the adjacent two color film unit of son of correspondence is provided with
Groove；
Anode, the corresponding color film unit array of son are prepared on the flatness layer；
The position of pixel defining layer, the corresponding groove is prepared on the flatness layer, and defines pixel region；
Wherein, the material of the pixel defining layer is light absorbent.
7. WOLED backboard according to claim 6, which is characterized in that between the groove and the color film unit of son with
The flatness layer separates.
8. WOLED backboard according to claim 6, which is characterized in that the anode be located at the flatness layer correspond to it is adjacent
Position between two grooves, and expose the groove.
9. WOLED backboard according to claim 6, which is characterized in that the pixel defining layer includes insertion section and interval
Portion, the insertion section are inserted into the groove, and the spacer portion protrudes the flatness layer and by adjacent two pixel region
It is spaced apart.
10. WOLED backboard according to claim 9, which is characterized in that the spacer portion extends to the edge of the anode
Position.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811110311.8A CN109346502A (en) | 2018-09-21 | 2018-09-21 | A kind of WOLED backboard and preparation method thereof |
| PCT/CN2018/109625 WO2020056809A1 (en) | 2018-09-21 | 2018-10-10 | Woled back plate and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811110311.8A CN109346502A (en) | 2018-09-21 | 2018-09-21 | A kind of WOLED backboard and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN109346502A true CN109346502A (en) | 2019-02-15 |
Family
ID=65306469
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811110311.8A Pending CN109346502A (en) | 2018-09-21 | 2018-09-21 | A kind of WOLED backboard and preparation method thereof |
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| WO (1) | WO2020056809A1 (en) |
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| CN110289284A (en) * | 2019-04-25 | 2019-09-27 | 昆山工研院新型平板显示技术中心有限公司 | Display panel and display panel manufacturing method |
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| WO2020056809A1 (en) | 2020-03-26 |
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Application publication date: 20190215 |