CN105206758A - Organic light emitting diode display - Google Patents
Organic light emitting diode display Download PDFInfo
- Publication number
- CN105206758A CN105206758A CN201410245142.4A CN201410245142A CN105206758A CN 105206758 A CN105206758 A CN 105206758A CN 201410245142 A CN201410245142 A CN 201410245142A CN 105206758 A CN105206758 A CN 105206758A
- Authority
- CN
- China
- Prior art keywords
- light
- absorbing zone
- light absorbing
- emitting diode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an organic light emitting diode display. The organic light emitting diode display comprises a plurality of pixel areas, a substrate, a first electrode layer, a second electrode layer, a pixel definition layer and a light absorption composite layer. The first electrode layer is formed on the substrate. The second electrode layer is formed on the first electrode layer. The pixel areas are separated by the pixel definition layer. The light absorption composite layer is formed on the substrate, wherein the wavelength range of light absorbed by the light absorption composite layer is 380-780 nm. The light absorption composite layer comprises a first light absorption layer and a second light absorption layer, and the second light absorption layer is formed on the first light absorption layer. The first light absorption layer absorbs light relatively short in wavelength, and the second light absorption layer absorbs light which is relatively long in wavelength, is different from the light absorbed by the first light absorption layer and is 380-780 nm in wavelength.
Description
Technical field
The present invention relates to a kind of organic light emitting diode display, and particularly relate to a kind of organic light emitting diode display with good suppression side direction light leak.
Background technology
Organic Light Emitting Diode (OLED) display has that thickness is thin, active illuminating and without the need to backlight, without advantages such as angle limitations.Along with consumer is to the expectation of electronic product height display image quality, the image resolution of organic light emitting diode display must towards high-resolution pixel (HighPPI; HighPixelperInch) develop.
But, in the process making the light-emitting component in organic light emitting diode display, because variations such as technological process, and make Display panel irregular colour, abnormal, side direction light leak, or the phenomenon such as colour cast.Therefore, the organic light emitting diode display that research and development have high-resolution and high display quality concurrently is one of important at present problem.
Summary of the invention
The object of the present invention is to provide a kind of organic light emitting diode display.In organic light emitting diode display, first light absorbing zone arrange in pairs or groups second light absorbing zone formed light absorption composite bed, the wavelength of its light absorbed effectively can contain the scope of whole visible ray, thus effectively can prevent the side direction light leakage phenomena between pixel region, and then promote color saturation and the display effect of display.
For reaching above-mentioned purpose, according to one embodiment of the invention, a kind of organic light emitting diode display is proposed.Organic light emitting diode display has multiple pixel region and comprises a substrate, one first electrode layer, a second electrode lay, a pixel defining layer and a light absorption composite bed.First electrode layer is formed on substrate, and the second electrode lay is formed on the first electrode layer.Pixel region is separated via pixel defining layer.Light absorption composite bed is formed on substrate, and the light that wherein light absorption composite bed absorbs has wave-length coverage about 380 ~ 780 nanometer.Light absorption composite bed comprises one first light absorbing zone and one second light absorbing zone, and the second light absorbing zone is formed on the first light absorbing zone.The light that first light absorbing zone absorbs has shorter wavelength, and the light that the second light absorbing zone absorbs has longer wavelength and is different from the light of the first light absorbing zone absorption between wave-length coverage about 380 ~ 780 nanometer.
In order to have better understanding to above-mentioned and other aspect of the present invention, preferred embodiment cited below particularly, and the accompanying drawing appended by coordinating, be described in detail below:
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the organic light emitting diode display of one embodiment of the invention;
Fig. 2 is the schematic diagram of the organic light emitting diode display of another embodiment of the present invention;
Fig. 3 is first light absorbing zone of one embodiment of the invention and the thickness of the second light absorbing zone schematic diagram relative to the relation of average light penetrance;
Fig. 4 is the schematic diagram of emission wavelength range relative to the relation of the light transmittance of the first light absorbing zone of one embodiment of the invention;
Fig. 5 is the schematic diagram of emission wavelength range relative to the relation of the light transmittance of the second light absorbing zone of one embodiment of the invention;
Fig. 6 is the schematic diagram of emission wavelength range relative to the relation of the light transmittance of light absorption composite bed of one embodiment of the invention;
Fig. 7 is first light absorbing zone of one embodiment of the invention and the thickness of the second light absorbing zone schematic diagram relative to the relation of absorptivity.
Symbol description
100,200: organic light emitting diode display
110: substrate
120: the first electrode layers
130: the second electrode lay
140: pixel defining layer
140a: opening
150: light absorption composite bed
151: the first light absorbing zones
153: the second light absorbing zones
160: luminescent layer
I, II: curve
P: pixel region
Embodiment
According to embodiments of the invention, in organic light emitting diode display, first light absorbing zone arrange in pairs or groups second light absorbing zone formed light absorption composite bed, the wavelength of its light absorbed effectively can contain the scope of whole visible ray, thus effectively can prevent the light leakage phenomena between pixel region, and then promote color saturation and the display effect of display.Embodiments of the invention are described in detail referring to appended accompanying drawing.Label identical in accompanying drawing is in order to indicate same or similar part.It is noted that accompanying drawing has simplified the content in order to clearly demonstrating embodiment, the thin portion structure that embodiment proposes has been only the use illustrated, not does limit to the present invention for the scope of protection.Have usually know the knowledgeable when can according to reality implement aspect need those structures are modified or are changed.
Fig. 1 illustrates the schematic diagram of organic light emitting diode display 100 according to an embodiment of the invention.As shown in Figure 1, organic light emitting diode display 100 has multiple pixel region P.Organic light emitting diode display 100 comprises substrate 110,1 first electrode layer 120, the second electrode lay 130, pixel defining layer 140 and a light absorption composite bed 150.First electrode layer 120 is formed on substrate 110 and respective pixel region P and arranges, and the second electrode lay 130 is formed on the first electrode layer 120.Each pixel region P separates via pixel defining layer 140.Light absorption composite bed 150 is formed on substrate 110 and at least respective pixel definition layer 140 is arranged.The light that light absorption composite bed 150 absorbs contains visible wavelength range, and the wave-length coverage that the light of absorption has can comprise 380 ~ 780 nanometers.Light absorption composite bed 150 comprises at least one first light absorbing zone 151 and one second light absorbing zone 153, first light absorbing zone 151 absorbs and comprises the light of first wave length scope, and the second light absorbing zone 153 to be positioned on the first light absorbing zone 151 and to absorb the light comprising second wave length scope.Wherein, first wave length scope is different from second wave length scope, and first wave length scope and second wave length scope all at least contain some visible light wave-length coverage.Aforementioned censured wave-length coverage difference refers to that the wavelength of light scope that both absorb does not have completely the same, and the wavelength of light scope that therefore the first light absorbing zone and the second light absorbing zone absorb can partly overlap, adjoin or separated.
In embodiment, the light transmittance of the first light absorbing zone 151 under first wave length scope is such as the light transmittance of the 20 ~ 80%, second light absorbing zone 153 under second wave length scope is such as 20 ~ 80%.
In embodiment, the first light absorbing zone 151 goes back the light that Absorbable rod has second wave length scope, and the light transmittance of the first light absorbing zone 151 under first wave length scope is such as the light transmittance be less than under second wave length scope.
In embodiment, the second light absorbing zone 153 goes back the light that Absorbable rod has first wave length scope, and the light transmittance of the second light absorbing zone 153 under first wave length scope is such as the light transmittance be greater than under second wave length scope.
In embodiment, the thickness of the first light absorbing zone 151 and the thickness of the second light absorbing zone 153 can distinguish position between 500 ~ 4000 dusts.
In embodiment, organic light emitting diode display 100 is such as white organic LED display, the light of each pixel region P corresponds to the particular color block of colored filter, and the pixel region P of each corresponding different colours block separates via pixel defining layer 140 each other.The wave-length coverage had due to the light of light absorption composite bed 150 absorption is about 380 ~ 780 nanometers, namely contain the scope of visible ray, therefore light absorption composite bed 150 can absorb the light that pixel region P is emitted to its neighborhood pixels region P scope, effectively prevents the side direction light leakage phenomena between multiple pixel region P.
Be compared to the pixel defining layer or patterned mask layer that directly make individual layer, usually must adopt exposure imaging manufacture craft collocation ultraviolet light polymerization manufacture craft, to produce the pattern of pixel defining layer or patterned mask layer.But in order to make pixel defining layer or patterned mask layer can solidify via ultraviolet light, then the material of pixel defining layer or patterned mask layer must can allow the light penetration of royal purple colour system wherein to be solidified into wanted pattern.Therefore, the pixel defining layer of so making or patterned mask layer can not be ater, also therefore can not absorb the light containing whole visible wavelength range.That is, this kind of individual layer pixel defining layer or patterned mask layer can not absorb or stop the light of whole visible wavelength range (380 ~ 780 nanometer), at least the light of royal purple colour system still has an opportunity to penetrate away, therefore the light between pixel region still cannot be completely isolated, also just effectively cannot prevent the light leakage phenomena between pixel region.
In embodiment, as shown in Figure 1, the first light absorbing zone 151 to be stacked on the second light absorbing zone 153 and direct contact the second light absorbing zone 153.In embodiment, the first light absorbing zone 151 absorbs the light comprising the first wave length scope of shorter wavelength, the such as light of 380 ~ 480 nanometers, the namely wave-length coverage of the light of royal purple colour system.In other words, in the present embodiment, the second light absorbing zone 153 absorbs wave-length coverage that the light that comprises second wave length scope has contains 480 ~ 780 nanometers scope to I haven't seen you for ages.That is, to arrange in pairs or groups the second light absorbing zone 153 via the first light absorbing zone 151, the wavelength of the light that light absorption composite bed 150 absorbs effectively can contain the scope of whole visible ray, therefore light absorption composite bed 150 can have the characteristic of ater, all visible rays can be absorbed, and effectively can prevent the side direction light leakage phenomena between multiple pixel region.Thus, the purity of the solid color of each pixel region P can improve, and the color saturation of display also can promote, and then improves display effect.
Moreover, light absorption composite bed 150 is formed with the first light absorbing zone 151 and the second light absorbing zone 153, then the absorbance of two stacking retes has addition, has higher absorbance, thus more contribute to the light leakage phenomena between isolated pixel region compared to single layer structure.
In embodiment, the first light absorbing zone 151 and the second light absorbing zone 153 at least one of them can comprise an organic material, be such as the material being usually used in hole transmission layer, luminescent layer and/or electron transfer layer.Be compared to the material adopting macromolecule as the first light absorbing zone 151 and the second light absorbing zone 153, need during making to adopt spin coating manufacture craft (spincoatingprocess), this belongs to wet type manufacture craft, then can there is solvent or pollutant in manufacture craft.Relatively, according to one embodiment of the invention, adopt Small molecular or minority can the macromolecule organic material of evaporation as the material of the first light absorbing zone 151 and the second light absorbing zone 153, then can make via evaporation manufacture craft, this belongs to dry type manufacture craft (dryprocess), therefore do not have the problem of solvent or pollutant, relatively there is no the problem of aqueous vapor yet, therefore can improve purity and the quality of the first light absorbing zone 151 and the second light absorbing zone 153.In addition, adopt organic material and via evaporation manufacture craft make the first light absorbing zone 151 and the second light absorbing zone 153 can have less thickness, be such as 500 ~ 4000 dusts.In embodiment, the thickness of light absorption composite bed 150 is such as 4000 dusts.During the material that existing first light absorbing zone 151 and the second light absorbing zone 153 are used for as hole transmission layer, luminescent layer and/or electron transfer layer, often thickness needs the very thin to avoid its light-absorbing effect of making, avoid organic illuminating element light extraction efficiency not good, therefore often thickness can below 100 dusts, the present embodiment is then utilize the next material as light absorption composite bed 150 of its absorption characteristic, therefore needs it to have certain thickness.
In embodiment, the first light absorbing zone 151 and the second light absorbing zone 153 at least one of them can comprise one of following compound or appoint both above combinations:
(CuPc; Absorb optical wavelength range: 600 ~ 800 nanometers),
(ZnPc; Absorb optical wavelength range: 600 ~ 700 nanometers),
(SubPc; Absorb optical wavelength range: 450 ~ 600 nanometers),
(SubNc; Absorb optical wavelength range: 500 ~ 750 nanometers),
(Perylene),
(PTCDA; Absorb optical wavelength range: 400 ~ 600 nanometers),
(PTCDI; Absorb optical wavelength range: 400 ~ 600 nanometers),
(P3HT; Absorb optical wavelength range: 400 ~ 650 nanometers),
(PCBM; Absorb optical wavelength range: 300 ~ 600 nanometers),
(DCJTB; Absorb optical wavelength range: 400 ~ 650 nanometers), Fe
2o
3(absorbing optical wavelength range: 300 ~ 600 nanometers).
Because each material has different absorption optical wavelength range, therefore the first light absorbing zone 151 second light absorbing zone 153 of arranging in pairs or groups is adopted to make light absorption composite bed 150, then can suitably allocate the material type selected, and adjust optimal absorption optical wavelength range, and then produce the light absorption composite bed 150 with ater characteristic.
In embodiment, the first light absorbing zone 151 and the second light absorbing zone 153 at least one of them can comprise P type dopant material (P-typedopant), be such as F4-TCNQ.
In embodiment, the first electrode layer 120 is such as anode (anode), and the second electrode lay 130 is such as negative electrode (cathode).Wherein, the first electrode layer 120 is such as reflection electrode layer.
In embodiment, organic light emitting diode display 100 also can comprise a luminescent layer 160, luminescent layer 160 to be formed on substrate 110 and to cover pixel defining layer 140 and the first electrode layer 120 is arranged, the second electrode lay 130 to be then positioned on substrate 110 and to cover luminescent layer 160, that is luminescent layer 160 is between the first electrode layer 120 and the second electrode lay 130.
As shown in Figure 1, light absorption composite bed 150 is formed at substrate 110 and the first electrode layer 120, pixel defining layer 140 between the two.That is the corresponding multiple pixel region P of light absorption composite bed 150 and pixel defining layer 140 are arranged.In embodiment, the light absorption composite bed 150 of organic light emitting diode display 100 is retes of whole piece, and the light absorption composite bed 150 of full wafer is formed under the first electrode layer 120.Because light absorption composite bed 150 is formed at bottom, except can to absorb by luminescent layer 160 send the light injected to bottom via pixel defining layer, avoid light to go out neighborhood pixels in bottom reflection and cause the problem of side direction light leak, also make see black when watching the region of pixel defining layer 140 by outside, this can reduce the first electrode layer 120 and reflect it. and the impact of light, the contrast being increased in outdoor viewing and increase are readable.
In addition, light absorption composite bed 150 is retes of one whole, does not have the pattern of respective pixel region P, does not therefore need to adopt accurate photomask etching process to make, and not easily occurs because the not good derivative problem of contraposition precision.
Fig. 2 illustrates the schematic diagram of organic light emitting diode display 200 according to another embodiment of the present invention.Same element numbers continued to use by element identical with previous embodiment in the present embodiment, and the related description of similar elements please refer to aforementioned, does not repeat them here.
As shown in Figure 2, in the present embodiment, light absorption composite bed 150 is positioned in pixel defining layer 140.In detail, light absorption composite bed 150 is only formed in pixel defining layer 140, and pixel region P is exposed to outside light absorption composite bed 150.In the present embodiment, light absorption composite bed 150 is formed between luminescent layer 160 and pixel defining layer 140.That is, the light absorption composite bed 150 of organic light emitting diode display 200 has the tomography opening 140a of the pattern corresponding to pixel region P, therefore can light leakage phenomena more effectively between the P of isolate pixels region.
In another embodiment, the light absorption composite bed 150 of organic light emitting diode display also can comprise one the 3rd light absorbing zone (not illustrating).3rd light absorbing zone is formed on the second light absorbing zone 153, and the light that the 3rd light absorbing zone absorbs has the wave-length coverage of the light of wave-length coverage and the second light absorbing zone 153 absorption being different from the light that the first light absorbing zone 151 absorbs.
Be described further with regard to embodiment below.In following examples, comprise P type dopant material for the first light absorbing zone 151, the second light absorbing zone 153 comprises CuPc, Fig. 3 illustrates the relation of thickness relative to average light penetrance of the first light absorbing zone 151 and the second light absorbing zone 153 according to an embodiment of the invention; Fig. 4 illustrate according to an embodiment of the invention emission wavelength range relative to the relation of the light transmittance of the first light absorbing zone 151; Fig. 5 illustrate according to an embodiment of the invention emission wavelength range relative to the relation of the light transmittance of the second light absorbing zone 153; Fig. 6 illustrate according to an embodiment of the invention emission wavelength range relative to the relation of the light transmittance of light absorption composite bed 150; Fig. 7 illustrates the relation of thickness relative to absorptivity of the first light absorbing zone 151 and the second light absorbing zone 153 according to an embodiment of the invention.But the following use of embodiment for illustrating, and should not be interpreted as restriction of the invention process.It is noted that light transmittance and absorptivity have complementary character, when the first light absorbing zone 151 and/or the second light absorbing zone 153 have high light transmittance for a light, then for this light, there is low light absorptivity.
Fig. 3 measures the luminous average light penetrance in wave-length coverage 550 ~ 750 nanometer.As shown in Figure 3, the thickness of average light penetrance and rete has the relation of an about inverse ratio.Wherein curve I represents the first light absorbing zone 151 of P type dopant material, and curve II represents second light absorbing zone 153 of CuPc.When the first light absorbing zone 151 and the second light absorbing zone 153 is stacked form light absorption composite bed 150 after, overall average light penetrance can be lower because of addition.
As shown in Figure 4, the first light absorbing zone 151 of P type dopant material has good trap in emission wavelength range about 380 ~ 500 nanometer, and its penetrance is at most 20%.As shown in Figure 5, second light absorbing zone 153 of CuPc has good trap in emission wavelength range about 550 ~ 730 nanometer, and its penetrance is at most 20%.Hold, the first light absorbing zone 151 of known P type dopant material is different from the dominant absorption wave-length coverage of second light absorbing zone 153 of CuPc.In Fig. 4 and Fig. 5, the first wave length scope of the first light absorbing zone 151 of definable P type dopant material is 380 ~ 500 nanometers, second wave length scope is 500 ~ 780 nanometers, and the first wave length scope of second light absorbing zone 153 of CuPc is 400 ~ 550 nanometers, second wave length scope is 550 ~ 730 nanometers.Wherein, the first wave length scope (380 ~ 500 nanometer) of the first light absorbing zone 151 is different from the second wave length scope (550 ~ 730 nanometer) of the second light absorbing zone 153, and the light transmittance of the first wave length scope of the first light absorbing zone 151 (380 ~ 500 nanometer) is less than the light transmittance of second wave length scope (500 ~ 780 nanometer), the light transmittance of the first wave length scope (400 ~ 550 nanometer) of the second light absorbing zone 153 is greater than the light transmittance of second wave length scope (550 ~ 730 nanometer).As shown in Figure 6, when the first light absorbing zone 151 and the second light absorbing zone 153 folded establish form light absorption composite bed 150 after, then in the wave-length coverage of 380 ~ 730 nanometers, all there is the light transmittance lower than 20%, represent that light absorption composite bed 150 can absorb visible ray effectively, and the light leak between effective isolate pixels region can be reached.
As shown in Figure 7, when the thickness of the first light absorbing zone 151 of P type dopant material and second light absorbing zone 153 of CuPc be all greater than about 110 nanometer time, both this, light absorbing zone 151 and 153 all can have the absorptivity being about greater than 50%.
In sum, although disclose the present invention in conjunction with above preferred embodiment, however itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, can be used for a variety of modifications and variations.Therefore, what protection scope of the present invention should define with the claim of enclosing is as the criterion.
Claims (10)
1. an organic light emitting diode display, has multiple pixel region, and this organic light emitting diode display comprises:
Substrate;
Pixel defining layer, those pixel regions are separated via this pixel defining layer; And
Light absorption composite bed, to be positioned on this substrate and to should pixel defining layer arrange, this light absorption composite bed comprises:
First light absorbing zone, this first light absorbing zone absorbs the light with a first wave length scope; And
Second light absorbing zone, is positioned on this first light absorbing zone, and this second light absorbing zone absorbs the light with a second wave length scope, and wherein, this first wave length scope is different from this second wave length scope.
2. organic light emitting diode display as claimed in claim 1, wherein the light transmittance of this first light absorbing zone under this first wave length scope is 20 ~ 80%, and the light transmittance of this second light absorbing zone under this second wave length scope is 20 ~ 80%.
3. organic light emitting diode display as claimed in claim 1, wherein this first light absorbing zone also absorbs the light with this second wave length scope, and the light transmittance of this first light absorbing zone under this first wave length scope is less than the light transmittance under this second wave length scope.
4. organic light emitting diode display as claimed in claim 3, wherein this second light absorbing zone also absorbs the light with this first wave length scope, and the light transmittance of this second light absorbing zone under this first wave length scope is greater than the light transmittance under this second wave length scope.
5. organic light emitting diode display as claimed in claim 1, wherein the thickness of this first light absorbing zone and the thickness of this second light absorbing zone are respectively between 500 ~ 4000 dusts.
6. organic light emitting diode display as claimed in claim 1, wherein this first light absorbing zone and this second light absorbing zone at least one of them comprises an organic material.
7. organic light emitting diode display as claimed in claim 1, wherein this light absorption composite bed is formed between this substrate and this pixel defining layer.
8. organic light emitting diode display as claimed in claim 1, wherein this light absorption composite bed is positioned in this pixel defining layer.
9. organic light emitting diode display as claimed in claim 1, also comprises:
First electrode layer, to be positioned on this substrate and to arranging by pixel region;
Luminescent layer, to be positioned on this substrate and to cover this pixel defining layer and this first electrode layer; And
The second electrode lay, to be positioned on this substrate and to cover this luminescent layer.
10. organic light emitting diode display as claimed in claim 9, wherein this light absorption composite bed is formed between this luminescent layer and this pixel defining layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410245142.4A CN105206758A (en) | 2014-06-04 | 2014-06-04 | Organic light emitting diode display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410245142.4A CN105206758A (en) | 2014-06-04 | 2014-06-04 | Organic light emitting diode display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105206758A true CN105206758A (en) | 2015-12-30 |
Family
ID=54954306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410245142.4A Pending CN105206758A (en) | 2014-06-04 | 2014-06-04 | Organic light emitting diode display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105206758A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170904A (en) * | 2017-06-30 | 2017-09-15 | 京东方科技集团股份有限公司 | Oled display substrate and preparation method thereof, display device |
| CN107195797A (en) * | 2017-06-28 | 2017-09-22 | 京东方科技集团股份有限公司 | A kind of display base plate and display device |
| WO2018233207A1 (en) * | 2017-06-23 | 2018-12-27 | Boe Technology Group Co., Ltd. | Display substrate, display apparatus, method of fabricating display substrate |
| CN109346502A (en) * | 2018-09-21 | 2019-02-15 | 深圳市华星光电半导体显示技术有限公司 | A kind of WOLED backboard and preparation method thereof |
| CN109742112A (en) * | 2019-01-08 | 2019-05-10 | 京东方科技集团股份有限公司 | OLED display panel and electronic equipment |
| CN109904342A (en) * | 2019-02-19 | 2019-06-18 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display device |
| CN110323344A (en) * | 2018-03-28 | 2019-10-11 | 夏普株式会社 | Light emitting device including the optics cavity with low angle color shift |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1333924A (en) * | 1998-12-08 | 2002-01-30 | 剑桥显示技术有限公司 | Display devices |
| CN1893125A (en) * | 2005-07-01 | 2007-01-10 | 铼宝科技股份有限公司 | Baseboard of preventing side light-leakage and organic lighting device |
| CN101257746A (en) * | 2007-03-02 | 2008-09-03 | 精工爱普生株式会社 | Organic electroluminescence device having input function and electronic apparatus |
| US20100051929A1 (en) * | 2008-09-04 | 2010-03-04 | Keon-Ha Choi | Organic light emitting display apparatus and method of manufacturing same |
| CN102189857A (en) * | 2010-01-22 | 2011-09-21 | 大日本印刷株式会社 | Printing method, method for forming light emitting layer, method for forming organic light emitting device, and organic light emitting device |
| CN103474450A (en) * | 2013-09-11 | 2013-12-25 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof and display device |
-
2014
- 2014-06-04 CN CN201410245142.4A patent/CN105206758A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1333924A (en) * | 1998-12-08 | 2002-01-30 | 剑桥显示技术有限公司 | Display devices |
| CN1893125A (en) * | 2005-07-01 | 2007-01-10 | 铼宝科技股份有限公司 | Baseboard of preventing side light-leakage and organic lighting device |
| CN101257746A (en) * | 2007-03-02 | 2008-09-03 | 精工爱普生株式会社 | Organic electroluminescence device having input function and electronic apparatus |
| US20100051929A1 (en) * | 2008-09-04 | 2010-03-04 | Keon-Ha Choi | Organic light emitting display apparatus and method of manufacturing same |
| CN102189857A (en) * | 2010-01-22 | 2011-09-21 | 大日本印刷株式会社 | Printing method, method for forming light emitting layer, method for forming organic light emitting device, and organic light emitting device |
| CN103474450A (en) * | 2013-09-11 | 2013-12-25 | 京东方科技集团股份有限公司 | Display panel and manufacturing method thereof and display device |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018233207A1 (en) * | 2017-06-23 | 2018-12-27 | Boe Technology Group Co., Ltd. | Display substrate, display apparatus, method of fabricating display substrate |
| CN109119437A (en) * | 2017-06-23 | 2019-01-01 | 京东方科技集团股份有限公司 | Pixel defining layer and manufacturing method, display base plate and manufacturing method, display panel |
| US11088226B2 (en) | 2017-06-23 | 2021-08-10 | Boe Technology Group Co., Ltd. | Display substrate, display apparatus, method of fabricating display substrate |
| CN107195797B (en) * | 2017-06-28 | 2019-11-01 | 京东方科技集团股份有限公司 | A kind of display base plate and display device |
| CN107195797A (en) * | 2017-06-28 | 2017-09-22 | 京东方科技集团股份有限公司 | A kind of display base plate and display device |
| US11251409B2 (en) | 2017-06-28 | 2022-02-15 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display substrate and display device |
| US11387297B2 (en) | 2017-06-30 | 2022-07-12 | Boe Technology Group Co., Ltd. | Organic light-emitting diode display substrate, manufacturing method thereof and display device |
| CN107170904A (en) * | 2017-06-30 | 2017-09-15 | 京东方科技集团股份有限公司 | Oled display substrate and preparation method thereof, display device |
| CN107170904B (en) * | 2017-06-30 | 2019-10-15 | 京东方科技集团股份有限公司 | Oled display substrate and preparation method thereof, display device |
| CN110323344B (en) * | 2018-03-28 | 2021-07-09 | 夏普株式会社 | Light emitting device including optical cavity with low angular color shift |
| CN110323344A (en) * | 2018-03-28 | 2019-10-11 | 夏普株式会社 | Light emitting device including the optics cavity with low angle color shift |
| CN109346502A (en) * | 2018-09-21 | 2019-02-15 | 深圳市华星光电半导体显示技术有限公司 | A kind of WOLED backboard and preparation method thereof |
| CN109742112B (en) * | 2019-01-08 | 2021-10-12 | 京东方科技集团股份有限公司 | OLED display panel and electronic equipment |
| CN109742112A (en) * | 2019-01-08 | 2019-05-10 | 京东方科技集团股份有限公司 | OLED display panel and electronic equipment |
| CN109904342B (en) * | 2019-02-19 | 2021-04-09 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof and display device |
| US11011584B2 (en) | 2019-02-19 | 2021-05-18 | Boe Technology Group Co., Ltd. | Array substrate and fabricating method thereof, and display device |
| CN109904342A (en) * | 2019-02-19 | 2019-06-18 | 京东方科技集团股份有限公司 | Array substrate and preparation method thereof, display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105206758A (en) | Organic light emitting diode display | |
| TWI549330B (en) | Organic light emitting diode display | |
| US11527733B2 (en) | Organic light emitting display apparatus | |
| US10026788B2 (en) | Organic light-emitting display apparatus and method of manufacturing the same | |
| JP6080438B2 (en) | Manufacturing method of organic EL device | |
| CN106910760B (en) | The dot structure of OLED display, OLED display and preparation method thereof | |
| KR101821255B1 (en) | Organic light emitting display apparatus | |
| CN108029178B (en) | Organic electroluminescent device, method for manufacturing organic electroluminescent device, lighting device, and display device | |
| WO2017043242A1 (en) | Organic electroluminescence device, lighting device and display device | |
| WO2017086306A1 (en) | Organic electroluminescence device, organic electroluminescence device production method, illumination device, and display device | |
| KR102374845B1 (en) | Color Filter Array Substrate and Method For Fabricating the Same, and Organic Light Emitting Diode Display Device Using the Same | |
| KR20120139388A (en) | Organic light-emitting display device employing black matrix-containing neutral density film | |
| WO2016084759A1 (en) | Organic electroluminescence device, illumination device, and display device | |
| JP6459170B2 (en) | Multi-surface color filter, organic electroluminescence display device, and method for manufacturing multi-surface color filter | |
| KR100784554B1 (en) | Organic light emitting display | |
| US20190386072A1 (en) | Pixel arrangement structure and method for manufacturing the same | |
| KR100759669B1 (en) | Dyes polarization film and organic light emitting display device having the same | |
| KR102310005B1 (en) | Optical film and organic light emitting diode display device having the same | |
| KR20160055015A (en) | Organic light emitting element and organic light emitting display device including the same | |
| KR20200137847A (en) | Display device and method for manufacturing the same | |
| KR20100011102A (en) | Organic light emitting diode with zno nano particle layer and manufacturing method of the same | |
| KR102459216B1 (en) | Display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151230 |