CN109346427A - Cleaning device and semiconductor crystal wafer cleaning equipment - Google Patents
Cleaning device and semiconductor crystal wafer cleaning equipment Download PDFInfo
- Publication number
- CN109346427A CN109346427A CN201811445034.6A CN201811445034A CN109346427A CN 109346427 A CN109346427 A CN 109346427A CN 201811445034 A CN201811445034 A CN 201811445034A CN 109346427 A CN109346427 A CN 109346427A
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- cleaning
- cleaned
- megasonic
- megasonic cleaning
- support arm
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/024—Cleaning by means of spray elements moving over the surface to be cleaned
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2203/00—Details of cleaning machines or methods involving the use or presence of liquid or steam
- B08B2203/02—Details of machines or methods for cleaning by the force of jets or sprays
- B08B2203/0288—Ultra or megasonic jets
Abstract
This application involves Semiconductor Cleaning Technology fields, more particularly, to a kind of cleaning device and semiconductor crystal wafer cleaning equipment.The cleaning device includes support frame, megasonic cleaning component and driving device；Support arm is provided on support frame, megasonic cleaning component is located on support arm, and driving device is used to that megasonic cleaning component to be driven to move back and forth along the length direction of support arm；Setting is at an angle of between the length direction of support arm and the surface of object to be cleaned, the vertical range between the movement starting point of megasonic cleaning component and the surface of object to be cleaned is less than the vertical range between the exercise end of megasonic cleaning component and the surface of object to be cleaned.The cleaning device of the application solves that megasonic cleaning equipment is lower in the local energy density closer to crystal round fringes, and cleaning is not thorough；And the technical issues of being concentrated in the local acoustic wave energy close to crystal circle center, will lead to crystal circle center's structural damage when serious, even can generate pit phenomenon in cleansing medium layer.
Description
Technical field
This application involves Semiconductor Cleaning Technology fields, set more particularly, to a kind of cleaning device and semiconductor crystal wafer cleaning
It is standby.
Background technique
After CMP (Chemical Mechanical Polishing, chemically mechanical polishing) technique, crystal column surface meeting
The multiple pollutants such as organic compound, particle and metal ion are remained, it is after the cmp process, super to being used during wafer cleaning
Impurity pollution can be effectively removed in sound wave or mega sonic wave cleaning technique.In existing ultrasound or megasonic cleaning technology, sound wave occurs
Device is evenly scanned from the crystal round fringes of rotation to crystal circle center, lower in the local energy density closer to crystal round fringes, clearly
It washes and is not thorough；And concentrated in the local acoustic wave energy close to crystal circle center, it will lead to crystal circle center's structural damage when serious, clear
Pit phenomenon can be even generated when washing dielectric layer.
Summary of the invention
The application's is designed to provide a kind of cleaning device and semiconductor crystal wafer cleaning equipment, for the wafer to rotation
Surface cleaned, it is close in the local energy closer to crystal round fringes to solve megasonic cleaning equipment existing in the prior art
Degree is lower, and cleaning is not thorough；And concentrated in the local acoustic wave energy close to crystal circle center, it will lead to crystal circle center's structure when serious
The technical issues of damaging, even generating pit phenomenon in cleansing medium layer.
This application provides a kind of cleaning devices, for cleaning the object to be cleaned of rotation, including support frame, megasonic cleaning group
Part and driving device；
Support arm is provided on support frame as described above, the megasonic cleaning component is located on the support arm, the driving dress
It sets for driving the megasonic cleaning component to move back and forth along the length direction of the support arm；
The megasonic cleaning component is for cleaning the surface of object to be cleaned；The length direction of the support arm and institute
It states and is at an angle of setting, the surface of the movement starting point of the megasonic cleaning component and the object to be cleaned between the surface of object to be cleaned
Between vertical range be less than the megasonic cleaning component exercise end and the surface of the object to be cleaned between it is vertical away from
From, wherein the distance between central axis of the movement starting point of the megasonic cleaning component and the object to be cleaned is greater than described
The distance between the central axis of the exercise end of megasonic cleaning component and the object to be cleaned.
In the above-mentioned technical solutions, further, the quantity of the support arm is two, one end of two support arms
It is connected, from the junction of two support arms to the direction of the other end of two support arms, two support arms
The distance between be gradually increased, the object to be cleaned can be placed between two support arms；The megasonic cleaning component
Quantity is two, and two megasonic cleaning components are respectively arranged on two support arms.
In the above-mentioned technical solutions, further, the angle between two support arms is greater than 0 degree, and described in two
Angle between support arm is less than 90 degree.
In the above-mentioned technical solutions, further, the support arm being projected through on the object to be cleaned it is described to
Clean the center of object.
In the above-mentioned technical solutions, further, the megasonic cleaning component includes megasonic cleaning spray head and inlet tube, institute
It states inlet tube to be connected with the megasonic cleaning spray head, the inlet tube, which is used to transport cleaning solution to the megasonic cleaning, to be sprayed
Head.
In the above-mentioned technical solutions, further, the inlet tube is helical hose.
In the above-mentioned technical solutions, further, terminals, the terminals are additionally provided on the megasonic cleaning spray head
For being connected with mega sonic wave generator.
In the above-mentioned technical solutions, further, the megasonic cleaning component passes through ball-screw and the support arm phase
Connection.
In the above-mentioned technical solutions, further, the driving device is motor.
Present invention also provides a kind of semiconductor crystal wafer cleaning equipments, including cleaning device described in above scheme.
Compared with prior art, the application has the beneficial effect that
Cleaning device provided by the present application, for clean rotation object to be cleaned, including support frame, megasonic cleaning component and
Driving device；Support arm is provided on support frame, megasonic cleaning component is located on support arm, and driving device is clear for driving million sound
The length direction that component is washed along support arm moves back and forth；Megasonic cleaning component is for cleaning the surface of object to be cleaned；Branch
Setting, the movement starting point of megasonic cleaning component and object to be cleaned are at an angle of between the length direction of brace and the surface of object to be cleaned
Surface between vertical range be less than megasonic cleaning component exercise end and object to be cleaned surface between vertical range,
Wherein, the distance between central axis of the movement starting point of megasonic cleaning component and object to be cleaned is greater than the fortune of megasonic cleaning component
The distance between the central axis of dynamic terminal and object to be cleaned.
Specifically, the cleaning device of the application includes support frame, megasonic cleaning component and driving device, support frame conduct
The main body rack of cleaning device, the support arm including being equipped with megasonic cleaning component.Drive of the megasonic cleaning component in driving device
Under dynamic, it can be moved back and forth along the length direction of support arm.Setting is at an angle of between support arm and the surface of object to be cleaned, when
When megasonic cleaning component movement to the edge of object to be cleaned, that is, the movement starting point of megasonic cleaning component, megasonic cleaning
The surface of component and object to be cleaned has first distance, when at megasonic cleaning component movement to the center of object to be cleaned, also
It is at the exercise end of megasonic cleaning component, the surface of megasonic cleaning component and object to be cleaned has second distance, second distance
Greater than first distance.That is, megasonic cleaning component is to when moving at the center of object to be cleaned, between object to be cleaned
Distance is gradually increased, and then prevents the center of object to be cleaned since acoustic wave energy is concentrated, and division center is caused to damage.
And the advantages of ultrasonic cleaning is not only saved using mega sonic wave cleaning, but also overcome ultrasonic cleaning not
Foot.The mechanism of mega sonic wave cleaning is effect of being shaken by high frequency (850kHz), and combines the chemical reaction of chemical to be cleaned
The surface of object is cleaned.Mega sonic wave cleaning can remove the particle on crystal column surface less than 0.2 μm, play what ultrasonic wave did not had
Effect.This method can play the role of two methods of mechanical pad and chemical cleaning simultaneously.In cleaning, issued by energy converter
Wavelength is the high energy sound wave that 1 μm of frequency is 0.8 megahertz.Solution molecule accelerates under the promotion of this sound wave, maximum wink
Shi Sudu can reach 30cm/s.Therefore, bubble as ultrasonic cleaning is not become, and can only be continuous with the fluid wave of high speed
Crystal column surface is impacted, the fine particles for the pollutant for adhering to crystal column surface are forced to remove and enter in cleaning solution.
Cleaning device provided by the present application is used to clean the surface of the wafer of rotation, solves and deposits in the prior art
Megasonic cleaning equipment it is lower in the local energy density closer to crystal round fringes, cleaning is not thorough；And in wafer
The local acoustic wave energy of the heart is concentrated, and will lead to crystal circle center's structural damage when serious, can even be generated in cleansing medium layer recessed
The technical issues of cheating phenomenon.
Present invention also provides semiconductor crystal wafer cleaning equipments, including cleaning device.Based on above-mentioned analysis it is found that this is partly led
It is close in the local energy closer to crystal round fringes that body wafer cleaning equipment solves megasonic cleaning equipment existing in the prior art
Degree is lower, and cleaning is not thorough；And concentrated in the local acoustic wave energy close to crystal circle center, it will lead to crystal circle center's structure when serious
The technical issues of damaging, even generating pit phenomenon in cleansing medium layer.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the application specific embodiment or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the application, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is structural schematic diagram of the cleaning device that provides of the embodiment of the present application one under the first visual angle；
Fig. 2 is structural schematic diagram of the cleaning device that provides of the embodiment of the present application one under the second visual angle；
Fig. 3 is structural schematic diagram of the cleaning device that provides of the embodiment of the present application one under third visual angle；
Fig. 4 is the structural schematic diagram for the cleaning device that the embodiment of the present application two provides.
In figure: 101- object to be cleaned；102- support frame；103- megasonic cleaning component；104- driving device；105- support
Arm；106- ball-screw；107- megasonic cleaning spray head；108- inlet tube.
Specific embodiment
It is clearly and completely described below in conjunction with technical solution of the attached drawing to the application, it is clear that described implementation
Example is some embodiments of the present application, instead of all the embodiments.Based on the embodiment in the application, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall in the protection scope of this application.
In the description of the present application, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for describe the application and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore should not be understood as the limitation to the application.In addition, term " first ", " second ",
" third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present application, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in application.
Embodiment one
Referring to shown in Fig. 1 to Fig. 3, wherein Fig. 1 is the cleaning device that the embodiment of the present application one provides, for cleaning rotation
Object to be cleaned 101, including support frame 102, megasonic cleaning component 103 and driving device 104；Branch is provided on support frame 102
Brace 105, megasonic cleaning component 103 are located on support arm 105, and driving device 104 is for driving megasonic cleaning component 103 along branch
The length direction of brace 105 moves back and forth；Megasonic cleaning component 103 is for cleaning the surface of object 101 to be cleaned；Support
Between the length direction of arm 105 and the surface of object to be cleaned 101 be at an angle of setting, the movement starting point of megasonic cleaning component 103 with
Vertical range between the surface of object 101 to be cleaned is less than the exercise end of megasonic cleaning component 103 and the table of object 101 to be cleaned
Vertical range between face, wherein between the movement starting point of megasonic cleaning component 103 and the central axis of object to be cleaned 101
Distance is greater than the exercise end of megasonic cleaning component 103 and the distance between the central axis of object 101 to be cleaned.
Specifically, the cleaning device of the application includes support frame 102, megasonic cleaning component 103 and driving device 104,
Main body rack of the support frame 102 as cleaning device, the support arm 105 including being equipped with megasonic cleaning component 103.Megasonic cleaning
Component 103 can move back and forth under the driving of driving device 104 along the length direction of support arm 105.Support arm 105 with
Setting is at an angle of between the surface of object 101 to be cleaned, when megasonic cleaning component 103 moves to the edge of object 101 to be cleaned,
The surface of the namely movement starting point of megasonic cleaning component 103, megasonic cleaning component 103 and object 101 to be cleaned has first
Distance, i.e., A shown in Fig. 2, when at the center that megasonic cleaning component 103 moves to object 101 to be cleaned, that is, million sound are clear
It washes at the exercise end of component 103, the surface of megasonic cleaning component 103 and object 101 to be cleaned has a second distance, i.e. in Fig. 2
Shown in B, second distance B be greater than first distance A.That is, megasonic cleaning component is moved at the center of object 101 to be cleaned
When, the distance between object 101 to be cleaned is gradually increased, and then prevents the center of object 101 to be cleaned due to sound wave energy
In quantity set, division center is caused to damage.
And the advantages of ultrasonic cleaning is not only saved using mega sonic wave cleaning, but also overcome ultrasonic cleaning not
Foot.The mechanism of mega sonic wave cleaning is effect of being shaken by high frequency (850kHz), and combines the chemical reaction of chemical to be cleaned
The surface of object 101 is cleaned.Mega sonic wave cleaning can remove the particle on crystal column surface less than 0.2 μm, play ultrasonic wave and rise not
The effect arrived.This method can play the role of two methods of mechanical pad and chemical cleaning simultaneously.In cleaning, by energy converter
Issuing wavelength is the high energy sound wave that 1 μm of frequency is 0.8 megahertz.Solution molecule accelerates under the promotion of this sound wave, most
Big instantaneous velocity can reach 30cm/s.Therefore, bubble as ultrasonic cleaning is not become, and can only be with the fluid wave of high speed
The fine particles of bump crystal column surface, the pollutant for adhering to crystal column surface are forced to remove and enter in cleaning solution.
Cleaning device provided by the present application is used to clean the surface of the wafer of rotation, solves and deposits in the prior art
Megasonic cleaning equipment it is lower in the local energy density closer to crystal round fringes, cleaning is not thorough；And in wafer
The local acoustic wave energy of the heart is concentrated, and will lead to crystal circle center's structural damage when serious, can even be generated in cleansing medium layer recessed
The technical issues of cheating phenomenon.
In the optional scheme of the embodiment, the quantity of support arm 105 is two, and one end of two support arms 105 is connected,
From the junction of two support arms 105 to the direction of the other end of two support arms 105, the distance between two support arms 105
It is gradually increased, object 101 to be cleaned can be placed between two support arms 105；The quantity of megasonic cleaning component 103 be two, two
A megasonic cleaning component 103 is respectively arranged on two support arms 105.
In this embodiment, one end of two support arms 105 is connected, and specifically, two support arms 105 can pass through connection
Part is connected, and the distance between two support arms 105 are gradually increased, and forms openning shape, object 101 to be cleaned is placed in
Between two support arms 105, and when the rotation of object to be cleaned 101, megasonic cleaning component can cover whole models of object 101 to be cleaned
It encloses, to the surface cleaning of entire object 101 to be cleaned.Two megasonic cleaning components 103 are respectively arranged on two support arms 105,
And since object 101 to be cleaned is located between two support arms 105, then cleaning device can be simultaneously to the upper of object 101 to be cleaned
Lower surface is cleaned, and cleaning efficiency is increased.
In the optional scheme of the embodiment, angle between two support arms 105 is greater than 0 degree, and two support arms 105 it
Between angle less than 90 degree.
In this embodiment, the angle between two support arms 105, can set according to specific duty requirements, such as
The angle between two support arms 105 is set according to the effect of the soiled condition on 101 surface of object to be cleaned and megasonic cleaning.
In the optional scheme of the embodiment, support arm 105 is projected through object 101 to be cleaned on object 101 to be cleaned
Center.
In this embodiment, the center of object 101 to be cleaned is directed toward in projection of the support arm 105 on object 101 to be cleaned, then
Can support arm 105 length is most short, in the shortest situation of 103 motion path of megasonic cleaning component so that megasonic cleaning
The cleaning range of component 103 can cover entire object 101 to be cleaned.
Embodiment two
Cleaning device in the embodiment two is improvement on that basi of the above embodiments, skill disclosed in above-described embodiment
Art content not repeated description, content disclosed in above-described embodiment also belong to two disclosure of embodiment.
Shown in Figure 4, in the optional scheme of the embodiment, megasonic cleaning component 103 includes 107 He of megasonic cleaning spray head
Inlet tube 108, inlet tube 108 are connected with megasonic cleaning spray head 107, and inlet tube 108 is clear to million sound for transporting cleaning solution
Wash spray head 107.
In this embodiment, megasonic cleaning component 103 includes megasonic cleaning spray head 107 and inlet tube 108, inlet tube 108
Cleaning solution can be transported to megasonic cleaning spray head 107, the chemical reaction of sound wave combination chemical is treated
The surface of cleaning object 101 is cleaned, using the fluid wave bump crystal column surface of high speed, the pollution for adhering to crystal column surface
The fine particles of object are forced to remove and enter in cleaning solution.
In the optional scheme of the embodiment, inlet tube 108 is helical hose.
In this embodiment, since one end of inlet tube 108 is connected with soda liquor container, the other end of inlet tube 108
It is connected with the megasonic cleaning spray head 107 in movement, helical hose is set by inlet tube 108, in megasonic cleaning spray head 107
During exercise, helical hose, that is, scalable position to adapt to megasonic cleaning spray head 107.
In the optional scheme of the embodiment, terminals are additionally provided on megasonic cleaning spray head 107, terminals are used for and million sound
Wave producer is connected.
In the optional scheme of the embodiment, megasonic cleaning component 103 is connected by ball-screw 106 with support arm 105.
In this embodiment, megasonic cleaning component 103 is connected by ball-screw 106 with support arm 105, ball-screw
106 can convert rotary motion to linear motion, and ball-screw 106 has the frictional resistance of very little, so that megasonic cleaning group
Part 103 will not there is a phenomenon where Catons when moving reciprocatingly.
In the optional scheme of the embodiment, driving device 104 is motor.
In the optional scheme of the embodiment, megasonic cleaning component 103 is connected with the output shaft of driving device 104, support
Running track is provided on arm 105, megasonic cleaning component 103 can be moved back and forth along the guide direction of running track；Driving dress
104 are set as linear motor, megasonic cleaning component 103 is driven by linear motor；Or driving device 104 is straight line cylinder, million sound are clear
Component 103 is washed to be driven by straight line cylinder.
Embodiment three
The embodiment of the present application three provides a kind of semiconductor crystal wafer cleaning equipment, including clear described in any of the above-described embodiment
Cleaning device, thus, whole advantageous effects with cleaning device described in any of the above-described embodiment, here, repeating no more.
Finally, it should be noted that the above various embodiments is only to illustrate the technical solution of the application, rather than its limitations；To the greatest extent
Pipe is described in detail the application referring to foregoing embodiments, those skilled in the art should understand that: its according to
So be possible to modify the technical solutions described in the foregoing embodiments, or to some or all of the technical features into
Row equivalent replacement；And these are modified or replaceed, each embodiment technology of the application that it does not separate the essence of the corresponding technical solution
The range of scheme.In addition, it will be appreciated by those of skill in the art that although some embodiments in this include in other embodiments
Included certain features rather than other feature, but the combination of the feature of different embodiments means the model for being in the application
Within enclosing and form different embodiments.For example, in the following claims, embodiment claimed it is any
One of can in any combination mode come using.
Claims (10)
1. a kind of cleaning device, for cleaning the object to be cleaned of rotation, which is characterized in that including support frame, megasonic cleaning component
And driving device；
Support arm is provided on support frame as described above, the megasonic cleaning component is located on the support arm, and the driving device is used
It is moved back and forth in the driving megasonic cleaning component along the length direction of the support arm；
The megasonic cleaning component is for cleaning the surface of object to be cleaned；The length direction of the support arm and it is described to
It cleans and is at an angle of setting between the surface of object, between the movement starting point of the megasonic cleaning component and the surface of the object to be cleaned
Vertical range be less than the megasonic cleaning component exercise end and the object to be cleaned surface between vertical range,
In, it is clear that the distance between the movement starting point of the megasonic cleaning component and the central axis of the object to be cleaned are greater than million sound
Wash the exercise end of component and the distance between the central axis of the object to be cleaned.
2. cleaning device according to claim 1, which is characterized in that the quantity of the support arm is two, described in two
One end of support arm is connected, from the junction of two support arms to the direction of the other end of two support arms, two
The distance between a described support arm is gradually increased, and the object to be cleaned can be placed between two support arms；
The quantity of the megasonic cleaning component is two, and two megasonic cleaning components are respectively arranged in two support arms
On.
3. cleaning device according to claim 2, which is characterized in that the angle between two support arms is greater than 0 degree,
And the angle between two support arms is less than 90 degree.
4. cleaning device according to any one of claim 1 to 3, which is characterized in that the support arm is described to clear
The center for being projected through the object to be cleaned on clean object.
5. cleaning device according to claim 1, which is characterized in that the megasonic cleaning component includes megasonic cleaning spray head
And inlet tube, the inlet tube are connected with the megasonic cleaning spray head, the inlet tube is for transporting cleaning solution to described
Megasonic cleaning spray head.
6. cleaning device according to claim 5, which is characterized in that the inlet tube is helical hose.
7. cleaning device according to claim 6, which is characterized in that be additionally provided with wiring on the megasonic cleaning spray head
End, the terminals with mega sonic wave generator for being connected.
8. cleaning device according to claim 1, which is characterized in that the megasonic cleaning component passes through ball-screw and institute
Support arm is stated to be connected.
9. cleaning device according to claim 1, which is characterized in that the driving device is motor.
10. a kind of semiconductor crystal wafer cleaning equipment, which is characterized in that filled including cleaning described in any one of claims 1 to 9
It sets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811445034.6A CN109346427B (en) | 2018-11-29 | 2018-11-29 | Cleaning device and semiconductor wafer cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811445034.6A CN109346427B (en) | 2018-11-29 | 2018-11-29 | Cleaning device and semiconductor wafer cleaning equipment |
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| Publication Number | Publication Date |
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| CN109346427A true CN109346427A (en) | 2019-02-15 |
| CN109346427B CN109346427B (en) | 2021-01-22 |
Family
ID=65318831
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811445034.6A Active CN109346427B (en) | 2018-11-29 | 2018-11-29 | Cleaning device and semiconductor wafer cleaning equipment |
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| Country | Link |
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| CN (1) | CN109346427B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563171A (en) * | 2020-12-10 | 2021-03-26 | 江苏汇成光电有限公司 | Wafer ion cleaning device |
| CN112992733A (en) * | 2021-02-08 | 2021-06-18 | 江苏亚电科技有限公司 | A brushing device for wafer processing |
| CN116598248A (en) * | 2023-05-11 | 2023-08-15 | 扬州市坤展新能源科技有限公司 | Semiconductor wafer cleaning device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5203798A (en) * | 1990-06-25 | 1993-04-20 | Hitachi, Ltd. | Cleaning apparatus for substrate |
| US20030098040A1 (en) * | 2001-11-27 | 2003-05-29 | Chang-Hyeon Nam | Cleaning method and cleaning apparatus for performing the same |
| CN1447392A (en) * | 2002-03-23 | 2003-10-08 | 三星电子株式会社 | Strong sonic wave cleaning equipment for mfg. semiconductor device |
| CN104900480A (en) * | 2014-03-03 | 2015-09-09 | 盛美半导体设备（上海）有限公司 | Wafer cleaning method |
| CN105414084A (en) * | 2015-12-10 | 2016-03-23 | 北京七星华创电子股份有限公司 | Ultrasonic or mega-sonic oscillatory two-phase-flow atomization washing device and ultrasonic or mega-sonic oscillatory two-phase-flow atomization washing method |
-
2018
- 2018-11-29 CN CN201811445034.6A patent/CN109346427B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5203798A (en) * | 1990-06-25 | 1993-04-20 | Hitachi, Ltd. | Cleaning apparatus for substrate |
| US20030098040A1 (en) * | 2001-11-27 | 2003-05-29 | Chang-Hyeon Nam | Cleaning method and cleaning apparatus for performing the same |
| CN1447392A (en) * | 2002-03-23 | 2003-10-08 | 三星电子株式会社 | Strong sonic wave cleaning equipment for mfg. semiconductor device |
| CN104900480A (en) * | 2014-03-03 | 2015-09-09 | 盛美半导体设备（上海）有限公司 | Wafer cleaning method |
| CN105414084A (en) * | 2015-12-10 | 2016-03-23 | 北京七星华创电子股份有限公司 | Ultrasonic or mega-sonic oscillatory two-phase-flow atomization washing device and ultrasonic or mega-sonic oscillatory two-phase-flow atomization washing method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112563171A (en) * | 2020-12-10 | 2021-03-26 | 江苏汇成光电有限公司 | Wafer ion cleaning device |
| CN112563171B (en) * | 2020-12-10 | 2022-11-01 | 江苏汇成光电有限公司 | Wafer ion cleaning device |
| CN112992733A (en) * | 2021-02-08 | 2021-06-18 | 江苏亚电科技有限公司 | A brushing device for wafer processing |
| CN116598248A (en) * | 2023-05-11 | 2023-08-15 | 扬州市坤展新能源科技有限公司 | Semiconductor wafer cleaning device |
| CN116598248B (en) * | 2023-05-11 | 2023-10-10 | 扬州市坤展新能源科技有限公司 | Semiconductor wafer cleaning device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109346427B (en) | 2021-01-22 |
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