CN109338459B - Nitrogen doping method for preparing low COP defect silicon single crystal - Google Patents
Nitrogen doping method for preparing low COP defect silicon single crystal Download PDFInfo
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 title claims abstract description 92
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 60
- 239000010703 silicon Substances 0.000 title claims abstract description 60
- 239000013078 crystal Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 56
- 229910052757 nitrogen Inorganic materials 0.000 title claims abstract description 45
- 230000007547 defect Effects 0.000 title claims abstract description 24
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 112
- 238000010494 dissociation reaction Methods 0.000 claims abstract description 52
- 230000005593 dissociations Effects 0.000 claims abstract description 51
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 38
- 239000007789 gas Substances 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000002912 waste gas Substances 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000012298 atmosphere Substances 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 5
- 238000002360 preparation method Methods 0.000 abstract description 4
- 230000002829 reductive effect Effects 0.000 abstract description 4
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- LURQBQNWDYASPJ-UHFFFAOYSA-N hydrazinyl Chemical compound N[NH] LURQBQNWDYASPJ-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a nitrogen doping method for preparing a low COP defect silicon single crystal. In the growth process of silicon single crystal by Czochralski method, adding an ammonia high-temperature dissociation device, introducing high-purity ammonia into the ammonia high-temperature dissociation device to generate N (g), dissolving the N (g) in silicon melt, diffusing the N (g) to the solid-liquid interface of the growth of the single crystal, and then entering the silicon single crystal along with the growth process to realize the nitrogen doping process and inhibit COP (coefficient of performance) defects of the silicon single crystal; compared with the traditional nitrogen atmosphere nitrogen doping method, the method has the advantages of low ammonia dissociation temperature, high dissociation efficiency, easy realization of nitrogen element doping effect and contribution to the preparation of the silicon single crystal with low COP defect by the Czochralski method. The low ammonia dissociation temperature means lower heating power, and the high ammonia dissociation efficiency means less gas source is needed, so that the production cost is greatly reduced, and the method can be suitable for mass production of the silicon single crystal with low COP defects by the Czochralski method.
Description
Technical Field
The invention relates to a preparation technology of a semiconductor single crystal silicon material, in particular to a nitrogen doping method for preparing a low COP defect silicon single crystal.
Background
Semiconductor single crystal silicon materials are the basic materials for the electronics industry, such as semiconductor devices and integrated circuits. From the viewpoint of improving the yield of silicon devices and integrated circuits and reducing the cost, increasing the diameter of silicon single crystals is still the development trend of the silicon single crystal preparation technology of the czochralski method in the future. Crystal grown particles (COP) defects, referred to as COP defects, are often present in large diameter Czochralski silicon single crystals. When the size of a COP defect reaches the scale of the feature line width, it will seriously affect the gate oxide integrity of the integrated circuit, and as the feature line width of the integrated circuit decreases, it will become more and more destructive.
One of the methods of suppressing generation of COP defects is a nitrogen doping method. Related researches have shown that nitrogen doping can reduce the size and density of COP defects in silicon single crystal of Czochralski method. The nitrogen doping process has various realization modes, including nitrogen atmosphere nitrogen doping method and Si3N4Melting method, ion implantation, and the like. The nitrogen doping method adopts nitrogen as a growth atmosphere, nitrogen molecules in the nitrogen are dissociated into nitrogen atoms at high temperature, the nitrogen atoms are dissolved in molten silicon and diffused to a solid-liquid interface of the growth of the single crystal, and the nitrogen atoms enter the silicon single crystal along with the growth process, so that the nitrogen doping process is realized. The nitrogen atmosphere nitrogen doping method has a major problem in that the efficiency of nitrogen doping is low because nitrogen molecules are not easily dissociated into nitrogen atoms. In fact, the nitrogen molecule is the most stable of the known diatomic molecules, and the N bond in the nitrogen molecule has a high dissociation energy (about 941 kJ. times. mol)-1) Even when heated to a high temperature of 3000 ℃ there is only a 0.1% dissociation rate. In a silicon single crystal growth environment where the temperature is relatively low, the dissociation rate of nitrogen molecules is lower. In order to solve the problem of low dissociation rate of nitrogen, a method of increasing the flow rate of nitrogen is often adopted, but the method can cause the negative effects of overhigh growth gas pressure and even spark of a heating electrode of a silicon single crystal furnace.
In conclusion, in the traditional czochralski method silicon single crystal process, the nitrogen atmosphere nitrogen doping method has low nitrogen high-temperature dissociation efficiency and poor nitrogen doping effect, and cannot easily realize the COP defect inhibiting effect on the silicon single crystal.
Disclosure of Invention
In view of the above analysis of the technical problems in the prior art, the present invention aims to provide a nitrogen doping method for preparing a silicon single crystal with low COP defects, so as to solve the technical problems in the prior art that the nitrogen doping effect is poor and the COP defects of the silicon single crystal are not strongly inhibited.
The purpose of the invention is mainly realized by the following technical scheme: a nitrogen doping method for producing a low COP defect silicon single crystal, characterized in that the method comprises the steps of:
(1) and in the process of growing the silicon single crystal by the Czochralski method, introducing high-purity ammonia gas into a high-temperature dissociation device to generate N (g), wherein the flow range of the ammonia gas is 0.01-0.05 SLM.
(2) And N (g) is dissolved in the silicon melt, diffused to the solid-liquid interface of the growth of the silicon single crystal and then enters the silicon single crystal along with the growth process, so that the nitrogen doping process is realized, and the COP defect of the silicon single crystal is inhibited.
(3) The tail gas enters the evacuation pipeline and passes through a waste gas treatment device, the waste gas treatment device comprises a low-temperature filter structure, the filter structure enables ammonia dissociation products to react at a low temperature to generate ammonia, nitrogen and hydrogen, then the ammonia is dissolved in water, and the tail gas with the ammonia removed enters the evacuation pipeline and is discharged to the atmosphere.
The ammonia high-temperature dissociation device in the step (1) is provided with reticular dissociation regions respectively at an inlet region, a middle region and an outlet region, and is used for increasing the flow path of ammonia, increasing the contact area of ammonia and a thermal environment and fully heating ammonia airflow; heaters are respectively arranged at the positions surrounding the reticular dissociation regions outside the gas pipeline and are used for dissociating the ammonia gas at high temperature; the heaters are respectively a No. I heater, a No. II heater and a No. III heater, wherein the No. I heater surrounds an inlet area arranged outside the gas pipeline; the No. II heater surrounds a middle area arranged outside the gas pipeline; the No. III heater surrounds an outlet area arranged outside the gas pipeline; the three zones are set at different temperatures, i.e., inlet zone temperature > middle zone temperature > outlet zone temperature.
The invention installs the ammonia high-temperature dissociation device in the middle of the inner chamber of the silicon single crystal furnace, and sets the temperature of the inlet area, the middle area and the outlet area of the heater as follows in sequence: 1200-1300 ℃, 1100-1200 ℃ and 1000-1100 ℃.
The invention installs the ammonia high temperature dissociation device at the lower part of the inner cavity of the silicon single crystal furnace, namely near the graphite heater, and sets the temperature of the inlet area, the middle area and the outlet area of the heater as follows in sequence: 800-900 ℃, 700-800 ℃ and 600-700 ℃.
The reticular dissociation region of the invention is formed by porous ceramic materials with high temperature resistance and chemical inertness to form a sponge-like airflow channel.
Introducing ammonia gas during the growth of the single crystal, wherein the ammonia gas is dissociated at high temperature, and the reaction process is described by the following reversible chemical reaction formula:
NH3 (g) « NH2 (g) +H (g) （1）；
NH2 (g) « NH (g) +H (g) （2）；
NH (g) « N (g) +H (g) （3）。
in the chemical reaction formula (3), n (g) can be dissolved in the silicon melt, diffused to the solid-liquid interface of the single crystal growth, and then enter the silicon single crystal as the growth process progresses, so as to realize the nitrogen doping process.
The dissociation rate of ammonia gas is high. According to the chemical equilibrium principle, the dissociation rate of ammonia gas can reach more than 99% when the temperature reaches 1000 ℃, which means that less ammonia gas can be used for dissociation to generate enough N (g) so as to meet the requirement of nitrogen element doping.
Specifically, NH3Although there are three equivalent N-H bonds in the molecule, the energy required to break them apart first and then is different, namely NH3、NH2NH dissociation energy is different. Research shows that NH3、NH2NH dissociation energy was decreased in order of 435 kJ. times. mol-1、397 kJ×mol-1、339 kJ×mol-1Left and right. Therefore, the ammonia high-temperature dissociation device can be designed into different temperature intervals, which is beneficial to promoting the chemical reaction formula to move towards the right side and improving the ammonia dissociation efficiency.
The invention has the following beneficial effects:
1. the invention provides a nitrogen doping method for preparing a low COP silicon single crystal. And compared with the traditional nitrogen atmosphere nitrogen doping method, the ammonia dissociation temperature is low, the dissociation efficiency is high, the nitrogen element doping effect is easy to realize, and the preparation of the silicon single crystal with the low COP defect by the Czochralski method is facilitated.
2. By adopting the nitrogen doping method for preparing the low COP silicon single crystal, provided by the invention, the low dissociation temperature of ammonia gas means lower heating power, and the high dissociation efficiency of ammonia gas means less gas source is needed, so that the production cost is greatly reduced, and the method can be suitable for batch production of the low COP defect silicon single crystal by the Czochralski method.
Drawings
FIG. 1 is a schematic side view of an ammonia gas thermal dissociation apparatus used in the embodiment of the present invention.
FIG. 2 is a schematic front view of an ammonia gas pyro-dissociation apparatus used in the embodiment of the present invention;
FIG. 3 is a schematic view of a Czochralski silicon single crystal furnace having an ammonia gas high-temperature ionizing device according to embodiment 1 of the present invention;
FIG. 4 is a schematic view of a Czochralski silicon single crystal furnace having an ammonia gas high-temperature ionizing device in example 2 of the present invention.
Detailed Description
The invention is further illustrated by the following examples in conjunction with the accompanying drawings:
as shown in fig. 1 and fig. 2, the ammonia high-temperature dissociation device of the present invention is provided with a reticular dissociation region 5 at the inlet region, the middle region and the outlet region respectively, for increasing the flow path of ammonia gas, increasing the contact area of ammonia gas and thermal environment, and making the ammonia gas flow be fully heated; the reticular dissociation region 5 is formed by a high-temperature-resistant, chemically inert porous ceramic material into a sponge-like gas flow channel. Heaters are respectively arranged at the positions surrounding the reticular dissociation zone 5 outside the gas pipeline 4 and are used for dissociating ammonia gas at high temperature; the heaters are respectively a No. I heater 1, a No. II heater 2 and a No. III heater 3, wherein the No. I heater surrounds an inlet area arranged outside the gas pipeline 4; the heater No. II 2 surrounds the intermediate region disposed outside the gas pipe 4; the heater 3 # III surrounds an outlet region provided outside the gas duct 4; the three zones are set at different temperatures, i.e., inlet zone temperature > middle zone temperature > outlet zone temperature.
Taking into account NH3、NH2NH dissociation energy is reduced in sequence, and the ammonia high-temperature dissociation device is designed into different temperature intervals. The temperature of the No. I heater in the inlet area of the ammonia high-temperature dissociation device is set to be relatively high, the temperature of the No. II heater in the middle area is set to be relatively low, and the temperature of the No. III heater in the outlet area is set to be the lowest. The design of the temperature field improves the dissociation efficiency of the ammonia gas, reduces the heating power and reduces the energy consumption.
Example 1: the nitrogen doping method for preparing the low COP defect silicon single crystal comprises the following steps:
(1) as shown in FIG. 3, an ammonia high-temperature ionization device 11 is added in the middle of a chamber of a Czochralski silicon single crystal furnace; in the growth process of the silicon single crystal 6 by the Czochralski method, high-purity ammonia gas is introduced into an ammonia gas high-temperature dissociation device to generate N (g), and the flow rate of the ammonia gas is 0.03 SLM. In this embodiment, the temperatures of the inlet region, the intermediate region and the outlet region of the heater are set as follows: 1250 deg.C, 1150 deg.C, 1050 deg.C.
(2) N (g) is dissolved in the silicon melt 7, diffused to the solid-liquid interface of the growth of the silicon single crystal, and then enters the silicon single crystal along with the progress of the growth process, so that the nitrogen doping process is realized, and the COP defect of the silicon single crystal is inhibited.
(3) The tail gas passes through the waste gas treatment device 9 before entering the evacuation pipeline 10, the waste gas treatment device 9 comprises a low-temperature filtering structure, the filtering structure enables ammonia dissociation products to react at a low temperature to generate ammonia, nitrogen and hydrogen, then the ammonia is dissolved in water to remove the tail gas of the ammonia, and the tail gas enters the evacuation pipeline 10 and is discharged to the atmosphere. The flow of ammonia gas introduced into the czochralski silicon single crystal furnace is very small, so that the content of nitrogen and hydrogen in the treated tail gas is very small, the influence on the external environment is very little, and the treated tail gas can directly enter the evacuation pipeline 10 and is discharged to the atmosphere.
After passing through the reticular dissociation zone 5, the ammonia gas is dissociated under the action of high temperature to generate N (g), and then enters the chamber of the Czochralski silicon single crystal furnace. N (g) is dissolved in the silicon melt 7 and diffused to the solid-liquid interface of the growth of the single crystal, and then enters the silicon single crystal 6 along with the growth process, so as to realize the nitrogen doping process. The ammonia gas dissociation rate is high, so that the ammonia gas flow is small in actual production, and the flow is 0.03 SLM. In order to avoid the ammonia gas containing water vapor, a gas purifier (such as a purifier with high requirement on impurity oxygen, and a deaerator can be added) is used together.
Example 2: the nitrogen doping method for preparing the low COP defect silicon single crystal comprises the following steps:
as shown in fig. 4, the present embodiment is different from embodiment 1 in that: adding an ammonia high-temperature ionization device 11 at the lower part of a chamber of the Czochralski silicon single crystal furnace, namely, the position close to a graphite heater; in this embodiment, the temperatures of the inlet region, the intermediate region and the outlet region of the heater are set as follows: 850 ℃, 750 ℃ and 650 ℃.
Since the ammonia gas high-temperature ionization device 11 is disposed near the graphite heater 8, the high-temperature ionization process of the ammonia gas can be completed by utilizing the heating action of the graphite heater 8, and therefore, compared with embodiment 1, the heating power of the heater can be significantly reduced in this embodiment.
Claims (1)
1. A nitrogen doping method for producing a low COP defect silicon single crystal, characterized in that the method comprises the steps of:
(1) introducing high-purity ammonia gas into a high-temperature dissociation device to generate N in the process of growing the silicon single crystal by the Czochralski method, wherein the generated N is in a gas state, and the flow range of the ammonia gas is 0.01-0.05 SLM;
(2) n is dissolved in the silicon melt and is diffused to the solid-liquid interface of the growth of the silicon single crystal, and then enters the silicon single crystal along with the growth process, so that the nitrogen doping process is realized, and the COP defect of the silicon single crystal is inhibited;
(3) the tail gas passes through a waste gas treatment device before entering an evacuation pipeline, the waste gas treatment device comprises a low-temperature filtering structure, the filtering structure enables ammonia dissociation products to react at low temperature to generate ammonia, nitrogen and hydrogen, then the ammonia is introduced into water to be dissolved in the water, and the tail gas without the ammonia enters the evacuation pipeline and is discharged to the atmosphere;
the ammonia high-temperature dissociation device in the step (1) is provided with a reticular dissociation region at an inlet region, a middle region and an outlet region respectively, and is used for increasing the flow path of ammonia, increasing the contact area of ammonia and a thermal environment and fully heating ammonia airflow; heaters are respectively arranged at the positions surrounding the reticular dissociation regions outside the gas pipeline and are used for dissociating the ammonia gas at high temperature; the heaters are respectively a No. I heater, a No. II heater and a No. III heater, wherein the No. I heater surrounds an inlet area arranged outside the gas pipeline; the No. II heater surrounds a middle area arranged outside the gas pipeline; the No. III heater surrounds an outlet area arranged outside the gas pipeline; the three zones are set at different temperatures, i.e. inlet zone temperature > middle zone temperature > outlet zone temperature;
the ammonia high-temperature dissociation device is arranged in the middle of the inner cavity chamber of the silicon single crystal furnace, and the temperature of an inlet area, a middle area and an outlet area of the heater is set as follows in sequence: 1200-1300 ℃, 1100-1200 ℃ and 1000-1100 ℃;
or the ammonia high-temperature dissociation device is arranged at the lower part of the inner cavity chamber of the silicon single crystal furnace, namely the position close to the graphite heater, and the temperatures of an inlet area, a middle area and an outlet area of the heater are set as follows in sequence: 800-900 ℃, 700-800 ℃ and 600-700 ℃;
the reticular dissociation region is formed by a high-temperature-resistant and chemically inert porous ceramic material into a spongy airflow channel.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87105811A (en) * | 1987-08-22 | 1988-02-24 | 浙江大学 | The gas phase nitrogen-doping method of czochralski silicon monocrystal |
| JP2001199795A (en) * | 2000-01-18 | 2001-07-24 | Toshiba Ceramics Co Ltd | Method for producing silicon single crystal ingot |
| JP2001226195A (en) * | 2000-02-16 | 2001-08-21 | Toshiba Ceramics Co Ltd | Method for producing silicon single crystal ingot |
| CN1923677A (en) * | 2005-09-02 | 2007-03-07 | 鸿富锦精密工业（深圳）有限公司 | Carbon nano-tube growth apparatus and method |
| CN104667707A (en) * | 2015-02-25 | 2015-06-03 | 苏州工业园区纳米产业技术研究院有限公司 | Waste gas treatment system |
| CN108314003A (en) * | 2018-05-10 | 2018-07-24 | 安徽大学 | A kind of preparation method of the porous carbon particle of N doping |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN87105811A (en) * | 1987-08-22 | 1988-02-24 | 浙江大学 | The gas phase nitrogen-doping method of czochralski silicon monocrystal |
| JP2001199795A (en) * | 2000-01-18 | 2001-07-24 | Toshiba Ceramics Co Ltd | Method for producing silicon single crystal ingot |
| JP2001226195A (en) * | 2000-02-16 | 2001-08-21 | Toshiba Ceramics Co Ltd | Method for producing silicon single crystal ingot |
| CN1923677A (en) * | 2005-09-02 | 2007-03-07 | 鸿富锦精密工业（深圳）有限公司 | Carbon nano-tube growth apparatus and method |
| CN104667707A (en) * | 2015-02-25 | 2015-06-03 | 苏州工业园区纳米产业技术研究院有限公司 | Waste gas treatment system |
| CN108314003A (en) * | 2018-05-10 | 2018-07-24 | 安徽大学 | A kind of preparation method of the porous carbon particle of N doping |
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Application publication date: 20190215 Assignee: CLP Jinghua (Tianjin) semiconductor materials Co.,Ltd. Assignor: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.46 Research Institute Contract record no.: X2024980003546 Denomination of invention: A nitrogen doping method for preparing low COP defect silicon single crystals Granted publication date: 20210112 License type: Common License Record date: 20240327 |