CN87105811A - The gas phase nitrogen-doping method of czochralski silicon monocrystal - Google Patents
The gas phase nitrogen-doping method of czochralski silicon monocrystal Download PDFInfo
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- CN87105811A CN87105811A CN87105811.1A CN87105811A CN87105811A CN 87105811 A CN87105811 A CN 87105811A CN 87105811 A CN87105811 A CN 87105811A CN 87105811 A CN87105811 A CN 87105811A
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- nitrogen
- gas
- gas phase
- silicon
- doping method
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Abstract
A kind of gas phase nitrogen-doping method of czochralski silicon monocrystal, adopting purity is that 99.99% nitrogen or argon-nitrogen mixed gas are realized gas phase nitrogen-doping as protective atmosphere, and the control furnace inner gas pressure is 5～60 holders, and optimum pressure is 15～25 holders, and gas flow is 1～6m
3/ hr, optimum flow are 2～5m
3/ hr, making nitrogen content is 1 * 10
14～4.5 * 10
15/ cm
3Silicon single-crystal, yield rate is not less than 70%.
Use this gas phase nitrogen-doping method, the cost of shielding gas can reduce by 40～50%, and its silicon chip has the favorable mechanical performance, and in making the semiconductor device technology process, the percentage of damage of silicon chip reduces by 10～15%.
Description
The present invention relates to a kind of single crystal growing technology of the crystal pulling method from fused solution.
Czochralski silicon monocrystal is the most basic material of making semiconducter device such as unicircuit.In the production process of semiconducter device, the silicon chip that silicon single-crystal commonly used is made is easy to generate warpage and cracked behind a series of high-temperature heat treatment process such as peroxidation, diffusion, influence finished semiconductor device product rate.Adopt the semiconducter device of the silicon single-crystal manufacturing of nitrating to have good performance and high rate of finished products.
Semiconductor Silicon 1981 PP54 have reported mixing after the nitrogen that people such as the Ah portion of Japan XINYUE propose in zone-melted silicon single crystal, because nitrogen plays a part to hinder dislocation motion, thereby improved the physical strength of silicon chip in silicon crystal lattice.
ElevctrochemSoc.1984 Spring Meeting, Ertonded Abstract No.36 has reported people such as the Chion of U.S. Monsanto company and has proposed to mix after the nitrogen in czochralski silicon monocrystal, owing to be incorporated into the interaction of nitrogen in the czochralski silicon monocrystal and oxygen silicon chip intensity is increased, can reduce in the device technology warpage of silicon chip and cracked after the high-temperature heat treatment.Improve the yield rate of device; Can suppress the generation of microdefect in the silicon monocrystal growth process, improve perfection of crystal.Comparatively speaking, the czochralski silicon monocrystal manufacturing cost is minimum, is easy to realize ever-larger diameters, successfully produces the nitrating czochralski silicon monocrystal and will produce positive effect.
VLSI Scienceand Technology 1985 PP543 have reported people such as the Ah portion of Japan XINYUE and have adopted in the molten silicon and add Si
3N
4Powder is produced the method for nitrating czochralski silicon monocrystal.But this method is not applied to industrial production as yet, and has following defective:
1, as if this method of employing, because Si
3N
4Dissolution rate in molten silicon is very low, and the melt time is prolonged greatly.
2, be difficult to control on the technology.If the nitrogen concentration in the silicon is low excessively, then suppresses microdefect and intensity and improve not obvious; If nitrogen concentration is too high in the molten silicon, when having surpassed the solubleness of nitrogen in the molten silicon, then separate out Si
3N
4And the normal growth of destruction silicon single-crystal.
The CN85100295 patent of authorizing in 1986 has proposed to make the method for czochralski silicon monocrystal under nitrogen protection atmosphere; using this method in industrial production can reduce production costs significantly; in silicon single-crystal, mixed simultaneously a certain amount of nitrogen; device performance and yield rate are improved; but owing to charging capacity, melt time and the crystal growth time of policrystalline silicon in the actual production has nothing in common with each other, the control problem of the itrogen content of getter with nitrogen doped in the silicon single-crystal still has to be solved.
Task of the present invention is to provide a kind of gas phase nitrogen-doping method that utilizes gas atmosphere to make the nitrating czochralski silicon monocrystal.
On the basis that research " adopts nitrogen atmosphere to make the method for vertical pulling (czochralski therapy) silicon single-crystal "; further studied under the reduced atmosphere; nitrogen in the atmosphere under conditions such as different pressure, flow, reaction times, silicon face state with the chemical reaction mechanism of silicon; by nitrogenous pressure reducing protection atmosphere of choose reasonable and the parameter such as pressure, flow of accurately controlling shielding gas in the stove; to obtain not to be subjected to nitrogen chemistry of silicones reaction interferential silicon monocrystal growth condition; proposed the gas phase nitrogen-doping method of czochralski silicon monocrystal, making nitrogen content is 1 * 10
14～4.5 * 10
15/ cm
3Silicon single-crystal.
Adopt the used equipment of the gas phase nitrogen-doping method of czochralski silicon monocrystal and operating process with identical as the vertical pulling method of protective atmosphere, its shielding gas employing nitrogen or argon-nitrogen mixed gas with argon gas.
When realizing gas phase nitrogen-doping with nitrogen as protective atmosphere, can adopt purity is 99.99% nitrogen, and furnace inner gas pressure is 5～60 holders, and optimum pressure is 15～25 holders in the stove; Gas flow is 1～6m
3/ hr, optimum flow are 2～5m
3/ hr.
When realizing gas phase nitrogen-doping with argon-nitrogen mixed gas as protective atmosphere, the argon gas composition is 1～99%, and the nitrogen composition is 99～1%, and the furnace pressure of gas mixture and flow are with pressure, the flow during as protective atmosphere is identical with nitrogen.
The gas phase nitrogen-doping method of czochralski silicon monocrystal and solid phase nitrogen-doping method relatively have the following advantages:
1, itrogen content of getter with nitrogen doped is controlled easily, and is easy to operate, helps applying in suitability for industrialized production;
2, adopt nitrogen or argon-nitrogen mixed gas, the cost of shielding gas can reduce by 40～50%;
3, the nitrating silicon single-crystal steady quality of being produced, in making the semiconductor device technology process, its silicon chip percentage of damage reduces by 10～15%.
Embodiment 1:
Utilize original straight pulling silicon single crystal furnace, the quartz crucible diameter is φ 254mm, and the policrystalline silicon charging capacity is 10kg, realizes gas phase nitrogen-doping with the nitrogen of purity 99.99% as protective atmosphere.Control furnace pressure scope is 10～25 holders, and the nitrogen flow scope is 2～4m
3/ hr, obtaining nitrogen content is 1 * 10
14～4 * 10
15Silicon single-crystal 7kg.
Embodiment 2:
Utilize original straight pulling silicon single crystal furnace; the quartz crucible diameter is 305mm; the policrystalline silicon charging capacity is 20kg; with argon-nitrogen mixed gas as protective atmosphere; argon gas and nitrogen composition ratio are 1: 1, and nitrogen gas purity is 99.99%, and purity of argon is 99.999%; the furnace inner gas pressure scope is 15～25 holders, and the gas flow scope is 3～6m
3/ hr.Obtaining nitrogen content is 1 * 10
14～4.5 * 10
15/ cm
3Silicon single-crystal 14.2kg.
Claims (4)
1, a kind of gas phase nitrogen-doping method of czochralski silicon monocrystal is characterized in that adopting nitrogen or argon-nitrogen mixed gas as shielding gas, and furnace inner gas pressure is 5～60 holders, and gas flow is 1～6m
3/ hr.
2,, it is characterized in that realizing that as shielding gas it is 99.99% nitrogen that the nitrogen of gas phase nitrogen-doping can adopt purity according to the described gas phase nitrogen-doping method of claim 1.
3, according to the described gas phase nitrogen-doping method of claim 1, it is characterized in that the argon gas composition is 1～99% when adopting argon-nitrogen mixed gas to realize gas phase nitrogen-doping as shielding gas, the nitrogen composition is 99～1%.
4, according to the described gas phase nitrogen-doping method of claim 1, it is characterized in that described shielding gas, optimal gas pressure is 15～25 holders in its stove, and optimum flow is 2～5m
3/ hr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN87105811.1A CN1003607B (en) | 1987-08-22 | 1987-08-22 | Gas phase nitrogen-doping method for straight-pulling monocrystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN87105811.1A CN1003607B (en) | 1987-08-22 | 1987-08-22 | Gas phase nitrogen-doping method for straight-pulling monocrystalline silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN87105811A true CN87105811A (en) | 1988-02-24 |
| CN1003607B CN1003607B (en) | 1989-03-15 |
Family
ID=4815456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN87105811.1A Expired CN1003607B (en) | 1987-08-22 | 1987-08-22 | Gas phase nitrogen-doping method for straight-pulling monocrystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1003607B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102409401A (en) * | 2010-09-26 | 2012-04-11 | 江国庆 | Technology for removing impurities by utilizing nitrogen-argon mixed gas in process of growing single crystal silicon by Czochralski method |
| CN102758253A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Czochralski polycrystalline silicon or monocrystal silicon preparation technology |
| CN106884203A (en) * | 2015-12-15 | 2017-06-23 | 上海新昇半导体科技有限公司 | The forming method of monocrystal silicon and wafer |
| CN106894083A (en) * | 2015-12-07 | 2017-06-27 | 胜高股份有限公司 | The manufacture method of monocrystalline silicon |
| CN107385507A (en) * | 2017-07-19 | 2017-11-24 | 内蒙古中环光伏材料有限公司 | A kind of method of monocrystalline silicon crystal pulling device and the application device |
| CN108138354A (en) * | 2015-05-01 | 2018-06-08 | 各星有限公司 | Produce the method for single crystal rod adulterated by volatility dopant |
| CN109338459A (en) * | 2018-12-12 | 2019-02-15 | 中国电子科技集团公司第四十六研究所 | A kind of N doping method preparing low COP defect silicon single crystal |
| CN109518269A (en) * | 2017-09-20 | 2019-03-26 | 内蒙古中环光伏材料有限公司 | Doped monocrystalline silicon stick and its production method |
-
1987
- 1987-08-22 CN CN87105811.1A patent/CN1003607B/en not_active Expired
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102409401A (en) * | 2010-09-26 | 2012-04-11 | 江国庆 | Technology for removing impurities by utilizing nitrogen-argon mixed gas in process of growing single crystal silicon by Czochralski method |
| CN102409401B (en) * | 2010-09-26 | 2014-07-23 | 江国庆 | Technology for removing impurities by utilizing nitrogen-argon mixed gas in process of growing single crystal silicon by Czochralski method |
| CN102758253A (en) * | 2012-06-20 | 2012-10-31 | 合肥景坤新能源有限公司 | Czochralski polycrystalline silicon or monocrystal silicon preparation technology |
| CN108138354A (en) * | 2015-05-01 | 2018-06-08 | 各星有限公司 | Produce the method for single crystal rod adulterated by volatility dopant |
| CN108138354B (en) * | 2015-05-01 | 2021-05-28 | 各星有限公司 | Method for producing single crystal ingot doped with volatile dopant |
| CN106894083A (en) * | 2015-12-07 | 2017-06-27 | 胜高股份有限公司 | The manufacture method of monocrystalline silicon |
| CN106894083B (en) * | 2015-12-07 | 2019-08-06 | 胜高股份有限公司 | The manufacturing method of monocrystalline silicon |
| CN106884203A (en) * | 2015-12-15 | 2017-06-23 | 上海新昇半导体科技有限公司 | The forming method of monocrystal silicon and wafer |
| CN107385507A (en) * | 2017-07-19 | 2017-11-24 | 内蒙古中环光伏材料有限公司 | A kind of method of monocrystalline silicon crystal pulling device and the application device |
| CN109518269A (en) * | 2017-09-20 | 2019-03-26 | 内蒙古中环光伏材料有限公司 | Doped monocrystalline silicon stick and its production method |
| CN109338459A (en) * | 2018-12-12 | 2019-02-15 | 中国电子科技集团公司第四十六研究所 | A kind of N doping method preparing low COP defect silicon single crystal |
| CN109338459B (en) * | 2018-12-12 | 2021-01-12 | 中国电子科技集团公司第四十六研究所 | Nitrogen doping method for preparing low COP defect silicon single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1003607B (en) | 1989-03-15 |
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