CN106884203A - The forming method of monocrystal silicon and wafer - Google Patents
The forming method of monocrystal silicon and wafer Download PDFInfo
- Publication number
- CN106884203A CN106884203A CN201510939120.2A CN201510939120A CN106884203A CN 106884203 A CN106884203 A CN 106884203A CN 201510939120 A CN201510939120 A CN 201510939120A CN 106884203 A CN106884203 A CN 106884203A
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- Prior art keywords
- monocrystal silicon
- wafer
- silicon
- forming method
- nitrogen
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The present invention proposes the forming method of a kind of monocrystalline silicon and wafer, when monocrystal silicon is formed using vertical pulling method, to being passed through the gas comprising deuterium and nitrogen in the silicon of molten, D-atom and nitrogen-atoms is set to store in the gap of monocrystal silicon, after wafer being formed using monocrystal silicon, during the device formed on wafer, deuterium can be diffused out, and be combined with the dangling bonds such as interface, form relatively stable structure, so as to avoid penetrating for hot carrier, leakage current is reduced, improve the performance and reliability of device；In addition, the suitable pulling of crystals silicon ingot of nitrating concentration is by after a step high annealing, highdensity oxygen precipitation can be formed in wafer body and the clean area of one fixed width is formed in wafer near surface, with the increase of nitrogen concentration, oxygen precipitation radial distribution in wafer is more uniformly distributed, it is possible to increase the performance of wafer.
Description
Technical field
The present invention relates to vertical pulling method field of single crystal growth and field of semiconductor manufacture, more particularly to a kind of monocrystalline silicon
The forming method of ingot and wafer.
Background technology
As the monocrystalline silicon of manufacture semiconductor devices parent material by being referred to as Czochralski (CZ) technology
The crystal technique of (pulling technique) grows into the monocrystal silicon of cylinder.Monocrystal silicon is by such as cutting
A series of wafer processing technologys such as piece, etching, cleaning, polishing and be processed to wafer.
According to CZ technologies, in crucible, by silicon chip in single crystal growing furnace heating and melting, then a diameter is only had
During liquid is melted in bar-shaped crystal seed (title seed crystal) immersion of 10mm, the micro, slight rotation of crystal seed is lifted up, in melting liquid
Silicon atom can continue crystallization on the monocrystal being previously formed, and continue its regular atomic arrangement structure.
If whole crystalline environment stabilization, it is possible to the formation crystallization for going round and beginning again, an original for cylinder is eventually formed
The silicon single crystal crystal of sub- marshalling, i.e. silicon single crystal silicon ingot.
Molten silicon is polluted in silica crucible by plurality of impurities, and one of which is oxygen.In the melting of silicon
At a temperature of, oxygen penetrates into lattice, and until it reaches a predetermined concentration, the concentration is general by silicon under silicon melt temperature
The solubility of middle oxygen and the actual segregation coefficient of solidification Oxygen in silicon determine.Penetrated into silicon ingot in crystal growing process
Oxygen concentration more than the solubility that Oxygen in silicon is solidified under representative temperature used in semiconductor devices manufacture.With
Crystal to grow and cool down from molten silicon, oxygen solubility therein is reduced rapidly, oxygen is in the silicon ingot of cooling
Saturation.
Silicon ingot is cut into chip.The interstitial oxygen concentration remained in chip grows into oxygen shallow lake during subsequent thermal processing procedure
Analysis.The appearance of oxygen deposition can reduce the integrality of gate oxide in device active region, and cause need not
The substrate leakage current wanted.
The content of the invention
It is an object of the invention to provide a kind of monocrystal silicon and the forming method of wafer, oxygen deposition can be reduced,
Improve the performance of subsequent device.
To achieve these goals, the present invention proposes a kind of forming method of monocrystal silicon, including step：
Polysilicon fragment is provided, the polysilicon fragment is put into crucible and is melted and is passed through gas, institute
Stating gas includes deuterium and nitrogen；
Monocrystal silicon is formed using magnetic field Czochralski method is added.
Further, in the forming method of described monocrystal silicon, gas is passed through for deuterium, nitrogen and argon
The mixed gas of gas.
Further, in the forming method of described monocrystal silicon, the partial pressure range of the deuterium is
1%~80%.
Further, in the forming method of described monocrystal silicon, the partial pressure range of the nitrogen is
1%~80%.
Further, in the forming method of described monocrystal silicon, nitrogen-atoms in the monocrystal silicon of formation
Density range is 1 × 1012Atom/cubic centimetre~8 × 1018Atom/cubic centimetre.
Further, in the forming method of described monocrystal silicon, D-atom in the monocrystal silicon of formation
Density range is 1 × 1012Atom/cubic centimetre~8 × 1018Atom/cubic centimetre.
Further, in the forming method of described monocrystal silicon, described plus magnetic field Czochralski method includes step：
The polysilicon fragment after by the doping is put into crucible and is melted with predetermined temperature；
Seed crystal is used with the upward crystal pulling of predetermined pulling rate, when fine grain length reaches predetermined length, is reduced and is drawn
Brilliant speed enters shouldering step；
Pulling rate is reduced in the shouldering step, a linear rate of temperature fall is maintained, the list of predetermined diameter is formed
After crystal silicon ingot, into turning the isometrical step of shoulder；
It is rapidly lifted up after after monocrystal silicon growth in thickness to pre-provisioning request, cooling in time, while stopping
Linear cooling, gives crucible climbing speed, according to diameter change rate speed, slowly adjusts casting speed control, treats
After monocrystal silicon diameter is stablized relatively, automatic equal diameter control program is opened, into the automatic equal diameter control stage.
Further, in the forming method of described monocrystal silicon, the diameter of the monocrystal silicon by
The pulling rate and predetermined temperature are controlled.
Further, in the forming method of described monocrystal silicon, the magnetic field intensity is 1000~5000
Gauss.
The invention allows for a kind of forming method of wafer, crystalline substance is formed as original material using monocrystal silicon
Circle, the monocrystal silicon is formed using the forming method of monocrystal silicon as described above, and the wafer contains deuterium
With N doping atom, high-temperature annealing process treatment is carried out to the wafer.
Further, in the forming method of described wafer, including step：
The monocrystal silicon is carried out successively to cut thin, surface grinding, polishing, edge treated and cleaning treatment,
Form wafer.
Further, in the forming method of described wafer, the temperature range of the high-temperature annealing process is
800 degrees Celsius~2000 degrees Celsius.
Compared with prior art, the beneficial effects are mainly as follows：Monocrystalline is being formed using vertical pulling method
During silicon ingot, to being passed through the gas comprising deuterium and nitrogen in the silicon of molten, store D-atom and nitrogen-atoms
In the gap of monocrystal silicon, after forming wafer using monocrystal silicon, during the device formed on wafer, deuterium
Can diffuse out, and be combined with the dangling bonds such as interface, relatively stable structure be formed, so as to avoid
Penetrating for hot carrier, reduces leakage current, improves the performance and reliability of device；Additionally, nitrating concentration is closed
Suitable pulling of crystals silicon ingot in wafer body by that after a step high annealing, can form highdensity oxygen precipitation
And the clean area of one fixed width is formed in wafer near surface, with the increase of nitrogen concentration, the oxygen precipitation in wafer
Radial distribution is more uniformly distributed, it is possible to increase the performance of wafer.
Brief description of the drawings
Fig. 1 is the flow chart of the forming method of monocrystal silicon in one embodiment of the invention.
Specific embodiment
The forming method of monocrystal silicon of the invention and wafer is retouched in more detail below in conjunction with schematic diagram
State, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change herein
The present invention of description, and still realize advantageous effects of the invention.Therefore, description below is appreciated that
It is widely known for those skilled in the art, and it is not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, public affairs are not described in detail
The function and structure known, because they can make the present invention chaotic due to unnecessary details.It will be understood that
In the exploitation of any practical embodiments, it is necessary to make a large amount of implementation details to realize the specific objective of developer,
For example according to about system or the limitation about business, another embodiment is changed into by one embodiment.Separately
Outward, it will be understood that this development is probably complicated and time-consuming, but for people in the art
It is only routine work for member.
The present invention is more specifically described by way of example referring to the drawings in the following passage.According to it is following explanation and
Claims, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simple
The form of change and use non-accurately ratio, be only used to conveniently, lucidly aid in illustrating the embodiment of the present invention
Purpose.
In the present embodiment, it is proposed that a kind of forming method of monocrystal silicon, including step：
S100：Polysilicon fragment is provided, the polysilicon fragment is put into crucible and is melted and be passed through gas
Body, the gas includes deuterium and nitrogen；
S200：Monocrystal silicon is formed using magnetic field Czochralski method is added.
In the step s 100, the polysilicon fragment can be the fragment of polysilicon or the silicon chip containing impurity,
Refined using this kind of silicon chip, it is necessary first to silicon chip is put into silica crucible and is melted, so as to follow-up
Monocrystal silicon is formed, partial impurities are removed.Specifically, melt temperature and technique with class of the prior art
Seemingly, therefore not to repeat here.
The injection of gas is carried out to the polysilicon fragment after thawing, the gas includes deuterium and nitrogen；Specifically
, the gas can be the mixed gas of deuterium, nitrogen and argon gas.Wherein, the partial pressure model of the deuterium
It is 1%~80% to enclose, and the partial pressure range of the nitrogen is 1%~80%, specifically, can be according to the requirement of technique
To determine, it is not limited thereto.
The density range of nitrogen-atoms is 1 × 10 in the monocrystal silicon of formation12Atom/cubic centimetre~8 × 1018Atom
How many atom/cubic centimetre (contains) in per cubic centimeter；The density model of D-atom in the monocrystal silicon of formation
Enclose is 1 × 1012Atom/cubic centimetre~8 × 1018Atom/cubic centimetre
When carrying out plus magnetic field Czochralski method forms monocrystal silicon, the polysilicon fragment to being melted carries out deuterium and nitrogen
Doping, make deuterium and nitrogen storage in the gap of monocrystal silicon, be conducive to lifted subsequent device performance.
In step s 200, using plus magnetic field Czochralski method formed monocrystal silicon.
Wherein, described plus magnetic field Czochralski method includes step：
The polysilicon fragment after by the doping is put into crucible and is melted with predetermined temperature；
Seed crystal is used with the upward crystal pulling of predetermined pulling rate, when fine grain length reaches predetermined length, is reduced and is drawn
Brilliant speed enters shouldering step；
Pulling rate is reduced in the shouldering step, a linear rate of temperature fall is maintained, the list of predetermined diameter is formed
After crystal silicon ingot, into turning the isometrical step of shoulder；
It is rapidly lifted up after after monocrystal silicon growth in thickness to pre-provisioning request, cooling in time, while stopping
Linear cooling, gives crucible climbing speed, according to diameter change rate speed, slowly adjusts casting speed control, treats
After monocrystal silicon diameter is stablized relatively, automatic equal diameter control program is opened, into the automatic equal diameter control stage.
Wherein, the diameter of the monocrystal silicon is controlled by the pulling rate and predetermined temperature.Monocrystalline silicon
The diameter of ingot can be determined according to the need for technique, is not limited thereto.Wherein, the magnetic field of addition
Intensity is 1000~5000 Gausses, e.g. 3000 Gausses.
In the another aspect of the present embodiment, it is also proposed that a kind of forming method of wafer, made using monocrystal silicon
For original material forms wafer, the monocrystal silicon uses the forming method shape of monocrystal silicon as described above
Into the wafer contains deuterium and N doping, and high-temperature annealing process treatment is carried out to the wafer.
Specifically, the forming method of the wafer includes step：
The monocrystal silicon is carried out successively to cut thin, surface grinding, polishing, edge treated and cleaning treatment,
Form wafer.
The temperature range of the high-temperature annealing process is 800 degrees Celsius~2000 degrees Celsius, and e.g. 1000 take the photograph
Family name's degree, wherein, by highdensity oxygen precipitation after a step high annealing, can be formed in wafer body and
Wafer near surface forms the clean area of one fixed width, so as to improve the performance of wafer.
To sum up, in the forming method of monocrystal silicon provided in an embodiment of the present invention and wafer, vertical pulling is being used
Method formed monocrystal silicon when, to being passed through the gas comprising deuterium and nitrogen in the silicon of molten, make D-atom and
Nitrogen-atoms is stored in the gap of monocrystal silicon, after forming wafer using monocrystal silicon, is formed on wafer
During device, deuterium can be diffused out, and be combined with the dangling bonds such as interface, form relatively stable structure,
So as to avoid penetrating for hot carrier, leakage current is reduced, improve the performance and reliability of device；Additionally, mixing
The suitable pulling of crystals silicon ingot of nitrogen concentration in wafer body by that after a step high annealing, can form high density
Oxygen precipitation and wafer near surface formed one fixed width clean area, with the increase of nitrogen concentration, in wafer
Oxygen precipitation radial distribution be more uniformly distributed, it is possible to increase the performance of wafer.
The preferred embodiments of the present invention are above are only, any restriction effect is not played to the present invention.Appoint
What person of ordinary skill in the field, is not departing from the range of technical scheme, to the present invention
The technical scheme and technology contents of exposure make any type of equivalent or modification etc. variation, belong to without departing from
The content of technical scheme, still falls within protection scope of the present invention.
Claims (12)
1. a kind of forming method of monocrystal silicon, it is characterised in that including step：
Polysilicon fragment is provided, the polysilicon fragment is put into crucible and is melted and is passed through gas, institute
Stating gas includes deuterium and nitrogen；
Monocrystal silicon is formed using magnetic field Czochralski method is added.
2. the forming method of monocrystal silicon as claimed in claim 1, it is characterised in that be passed through gas for deuterium
The mixed gas of gas, nitrogen and argon gas.
3. the forming method of monocrystal silicon as claimed in claim 1 or 2, it is characterised in that the deuterium
Partial pressure range be 1%~80%.
4. the forming method of monocrystal silicon as claimed in claim 1 or 2, it is characterised in that the nitrogen
Partial pressure range be 1%~80%.
5. the forming method of monocrystal silicon as claimed in claim 1, it is characterised in that the monocrystalline silicon of formation
The density range of nitrogen-atoms is 1 × 10 in ingot12Atom/cubic centimetre~8 × 1018Atom/cubic centimetre.
6. the forming method of monocrystal silicon as claimed in claim 1, it is characterised in that the monocrystalline silicon of formation
The density range of D-atom is 1 × 10 in ingot12Atom/cubic centimetre~8 × 1018Atom/cubic centimetre.
7. the forming method of monocrystal silicon as claimed in claim 1, it is characterised in that described plus magnetic field is straight
Daraf(reciprocal of farad) includes step：
The polysilicon fragment after by the doping is put into crucible and is melted with predetermined temperature；
Seed crystal is used with the upward crystal pulling of predetermined pulling rate, when fine grain length reaches predetermined length, is reduced and is drawn
Brilliant speed enters shouldering step；
Pulling rate is reduced in the shouldering step, a linear rate of temperature fall is maintained, the list of predetermined diameter is formed
After crystal silicon ingot, into turning the isometrical step of shoulder；
It is rapidly lifted up after after monocrystal silicon growth in thickness to pre-provisioning request, cooling in time, while stopping
Linear cooling, gives crucible climbing speed, according to diameter change rate speed, slowly adjusts casting speed control, treats
After monocrystal silicon diameter is stablized relatively, automatic equal diameter control program is opened, into the automatic equal diameter control stage.
8. the forming method of monocrystal silicon as claimed in claim 7, it is characterised in that the monocrystal silicon
Diameter controlled by the pulling rate and predetermined temperature.
9. the forming method of monocrystal silicon as claimed in claim 7, it is characterised in that the magnetic field intensity
It is 1000~5000 Gausses.
10. a kind of forming method of wafer, wafer, its feature are formed using monocrystal silicon as original material
It is that the monocrystal silicon uses the formation side of monocrystal silicon as claimed in any one of claims 1-9 wherein
Method is formed, and the wafer contains deuterium and N doping, and high-temperature annealing process treatment is carried out to the wafer.
The forming method of 11. wafers as claimed in claim 10, it is characterised in that including step：
The monocrystal silicon is carried out successively to cut thin, surface grinding, polishing, edge treated and cleaning treatment,
Form wafer.
The forming method of 12. wafers as claimed in claim 10, it is characterised in that the high annealing work
The temperature range of skill is 800 degrees Celsius~2000 degrees Celsius.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510939120.2A CN106884203A (en) | 2015-12-15 | 2015-12-15 | The forming method of monocrystal silicon and wafer |
| TW105118435A TWI628316B (en) | 2015-12-15 | 2016-06-13 | Methods for forming monocrystalline silicon ingot and wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510939120.2A CN106884203A (en) | 2015-12-15 | 2015-12-15 | The forming method of monocrystal silicon and wafer |
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| CN106884203A true CN106884203A (en) | 2017-06-23 |
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| CN201510939120.2A Pending CN106884203A (en) | 2015-12-15 | 2015-12-15 | The forming method of monocrystal silicon and wafer |
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| TW (1) | TWI628316B (en) |
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| CN101560693A (en) * | 2009-04-22 | 2009-10-21 | 浙江碧晶科技有限公司 | Method for preparing solar energy level silicon crystals containing doped element |
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| EP2309038B1 (en) * | 2009-10-08 | 2013-01-02 | Siltronic AG | production method of an epitaxial wafer |
| JP2013163598A (en) * | 2012-01-10 | 2013-08-22 | Globalwafers Japan Co Ltd | Method for producing silicon wafer |
| US9757160B2 (en) * | 2012-09-28 | 2017-09-12 | Globus Medical, Inc. | Device and method for treatment of spinal deformity |
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| CN87105811A (en) * | 1987-08-22 | 1988-02-24 | 浙江大学 | The gas phase nitrogen-doping method of czochralski silicon monocrystal |
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| CN1606799A (en) * | 2001-12-21 | 2005-04-13 | Memc电子材料有限公司 | Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same |
| CN101560693A (en) * | 2009-04-22 | 2009-10-21 | 浙江碧晶科技有限公司 | Method for preparing solar energy level silicon crystals containing doped element |
| CN102486999A (en) * | 2010-12-01 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | Forming method of grid oxidation layer |
| CN102709186A (en) * | 2012-01-12 | 2012-10-03 | 上海华力微电子有限公司 | Method for reducing negative bias temperature instability effect of device and manufacturing method of device |
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| Publication number | Publication date |
|---|---|
| TW201723240A (en) | 2017-07-01 |
| TWI628316B (en) | 2018-07-01 |
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