CN109338156A - 磁性镀层铜键合丝的制备方法 - Google Patents

磁性镀层铜键合丝的制备方法 Download PDF

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CN109338156A
CN109338156A CN201810985847.8A CN201810985847A CN109338156A CN 109338156 A CN109338156 A CN 109338156A CN 201810985847 A CN201810985847 A CN 201810985847A CN 109338156 A CN109338156 A CN 109338156A
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palladium
plating
bonding wire
iron
annealing
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王汉清
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Abstract

一种磁性镀层铜键合丝的制备方法，包括以下步骤：(1)熔铸和拉丝；(2)电镀磁性镀层；(3)化学镀钯：将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯，镀钯液的钯离子浓度为5‑20克每升，镀钯条件为镀钯液的pH值控制在9.5‑10.3，镀钯液的温度控制在40‑60摄氏度；(4)退火：利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH‑CH3CHO+Cu+H2O)，用氮气加无水乙醇代替氮氢混合气进行退火保护；退火温度为250～500℃；(5)清洗：利用无水乙醇在高温蒸发时爆炸力打掉丝上的脏物；(6)对清洗后的键合丝进行复绕。本发明生成的铜键合丝性能良好稳定，具有防氧化和抗电磁干扰的优点。

Description

磁性镀层铜键合丝的制备方法
技术领域
本发明涉及半导体新材料领域，具体涉及键合丝领域，尤其涉及一种具有磁性镀层铜键合丝及其制备方法。
背景技术
近几年随着金价不断攀升，封装领域的成本越来越高，目前镀钯铜键合丝代替金丝已经日趋成熟。
现有技术中多数研究的热点在于铜键合丝的具体成分组成和镀钯防氧化的方法。例如中国专利文献(CN103560120A)公开了一种含有微量的磷和锰的键合丝，并具体采用了化学镀的方式镀钯；中国专利文献(CN102660695A)公开了一种具有屏蔽铜网的键合丝，防止交叉放电的风险。但是键合丝间的电磁干扰还是存在，如何减少键合丝间的电磁干扰也是半导体封装所需要克服的问题。
发明内容
本发明的目的就是针对现有技术存在的问题，提供一种具有磁性镀层铜键合丝，所述铜键合丝的元素质量百分比为：铜的质量百分比大于99.95％，硅的质量百分比为0.003％-0.05％，银的质量百分比为0.001％-0.005％，锰的质量百分比为0.005％-0.01％，余量为不可避免的杂质，所述铜键合丝的外层依次包裹有磁性镀层和化学镀钯层。
其中，所述磁性镀层为铁层和铁钴合金层的双层结构。
其中，所述铁层的厚度为50-500μm，所述铁钴合金层的厚度为200-800μm。
其中，所述铁钴合金层，铁的质量百分比为50％-80％，钴的质量百分比为20％-50％。
本发明还提供了一种制备上述具有磁性镀层铜键合丝的方法，所述方法包括以下步骤：
(1)熔铸和拉丝：在熔铸过程中加入0.003％-0.05％的硅、0.001％-0.005％的银和0.005％-0.01％的锰，加热方式采用中频加热，连铸方式采用下引式真空连铸，并控制熔铸和拉丝条件为：熔铸温度为1100-1300℃，真空度1.0*10-5Mpa，精炼时间20-40分钟，连铸速度150-300mm/分钟，形成的铜坯直径为3-8mm，拉丝速度为50-100m/min；
(2)电镀磁性镀层：将铜键合丝成品在退火后单根放入铁的电镀液中进行电镀铁层，其中铁的电镀液的铁离子浓度为20-50克每升，铁层厚度为50-500μm；然后再把镀有铁层的铜键合丝放入铁钴的电镀液中进行电镀铁钴合金层，其中铁钴的电镀液的铁离子浓度为20-50克每升，钴离子的浓度为10-20克每升，铁钴合金层厚度为200-800μm；
(3)化学镀钯：将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯，镀钯液的钯离子浓度为5-20克每升，镀钯条件为镀钯液的pH值控制在9.5-10.3，镀钯液的温度控制在40-60摄氏度；
(4)退火：利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH-CH3CHO+Cu+H2O)，用氮气加无水乙醇代替氮氢混合气进行退火保护；退火温度为250～500℃；
(5)清洗：利用无水乙醇在高温蒸发时爆炸力打掉丝上的脏物；
(6)对清洗后的键合丝进行复绕。
本发明的有益效果：本发明将硅、银、锰的微量元素加入铜键合丝，可以提高熔体的流动性，改善铜及合金的焊接性能、耐蚀性能，提高铜的强度和耐蚀性能。本发明还利用铁层和铁钴合金层来防止电磁干扰，铁钴合金层还可以防止内部铜键合丝的氧化。
具体实施方式
本发明的具有磁性镀层铜键合丝，所述铜键合丝的元素质量百分比为：铜的质量百分比大于99.95％，硅的质量百分比为0.003％-0.05％，银的质量百分比为0.001％-0.005％，锰的质量百分比为0.005％-0.01％，余量为不可避免的杂质，所述铜键合丝的外层依次包裹有磁性镀层和化学镀钯层。
本发明的制备方法包括以下步骤：
(1)熔铸和拉丝：在熔铸过程中加入0.003％-0.05％的硅、0.001％-0.005％的银和0.005％-0.01％的锰，加热方式采用中频加热，连铸方式采用下引式真空连铸，并控制熔铸和拉丝条件为：熔铸温度为1100-1300℃，真空度1.0*10-5Mpa，精炼时间20-40分钟，连铸速度150-300mm/分钟，形成的铜坯直径为3-8mm，拉丝速度为50-100m/min；
(2)电镀磁性镀层：将铜键合丝成品在退火后单根放入铁的电镀液中进行电镀铁层，其中铁的电镀液的铁离子浓度为20-50克每升，铁层厚度为50-500μm；然后再把镀有铁层的铜键合丝放入铁钴的电镀液中进行电镀铁钴合金层，其中铁钴的电镀液的铁离子浓度为20-50克每升，钴离子的浓度为10-20克每升，铁钴合金层厚度为200-800μm；
(3)化学镀钯：将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯，镀钯液的钯离子浓度为5-20克每升，镀钯条件为镀钯液的pH值控制在9.5-10.3，镀钯液的温度控制在40-60摄氏度；
(4)退火：利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH-CH3CHO+Cu+H2O)，用氮气加无水乙醇代替氮氢混合气进行退火保护；退火温度为250～500℃；
(5)清洗：利用无水乙醇在高温蒸发时爆炸力打掉丝上的脏物；
(6)对清洗后的键合丝进行复绕。
实施例1
(1)熔铸和拉丝：在熔铸过程中加入0.003％的硅、0.001％的银和0.005％的锰，加热方式采用中频加热，连铸方式采用下引式真空连铸，并控制熔铸和拉丝条件为：熔铸温度为1200℃，真空度1.0*10-5Mpa，精炼时间40分钟，连铸速度200mm/分钟，形成的铜坯直径为5mm，拉丝速度为80m/min；
(2)电镀磁性镀层：将铜键合丝成品在退火后单根放入铁的电镀液中进行电镀铁层，其中铁的电镀液的铁离子浓度为50克每升，铁层厚度为500μm；然后再把镀有铁层的铜键合丝放入铁钴的电镀液中进行电镀铁钴合金层，其中铁钴的电镀液的铁离子浓度为50克每升，钴离子的浓度为20克每升，铁钴合金层厚度为500μm；
(3)化学镀钯：将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯，镀钯液的，镀钯液成分为6g/LPdCl、10g/LNaH2PO2、100ml/LNH4OH、10g/LNH4Cl，镀钯液的pH值控制在9.5附近，镀钯液的温度控制在40摄氏度；化学还原钯法中使用的包钯液为弱碱性，使用后为中性，较为环保。成品化学镀钯法的镀后钯层均匀，并且钯层厚度可控。另外传统工艺是在半成品时镀钯，这样丝材变硬，在后道加工时模具消耗量极大，本专利的化学镀钯方法可以最大程度的减小模具用量，节省资源。
(4)退火：利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH-CH3CHO+Cu+H2O)，用氮气加无水乙醇代替氮氢混合气进行退火保护，比氢气还原安全；退火温度为250℃；
(5)清洗：利用无水乙醇，在高温蒸发时爆炸力打掉丝上的脏物；利用无水乙醇在高温蒸发时爆力打掉丝上的脏东西，代替去离子水清洗的步骤，可以节省用水量，节约用水。
(6)对清洗后的键合丝进行复绕。化学镀钯、退火、清洗和复绕一体完成，镀钯退火复绕速度为50米每分钟。
实施例2
(1)熔铸和拉丝：在熔铸过程中加入0.05％的硅、0.05％的银和0.001％的锰，加热方式采用中频加热，连铸方式采用下引式真空连铸，并控制熔铸和拉丝条件为：熔铸温度为1300℃，真空度1.0*10-5Mpa，精炼时间30分钟，连铸速度300mm/分钟，形成的铜坯直径为8mm，拉丝速度为50m/min；
(2)电镀磁性镀层：将铜键合丝成品在退火后单根放入铁的电镀液中进行电镀铁层，其中铁的电镀液的铁离子浓度为20克每升，铁层厚度为200μm；然后再把镀有铁层的铜键合丝放入铁钴的电镀液中进行电镀铁钴合金层，其中铁钴的电镀液的铁离子浓度为50克每升，钴离子的浓度为10克每升，铁钴合金层厚度为300μm；
(3)化学镀钯：将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯，镀钯液成分为6.67g/LPdCl(对应钯离子浓度为5克每升)、10g/LNaH2PO2、100ml/LNH4OH、10g/LNH4Cl，镀钯液的pH值控制在9.5附近，镀钯液的温度控制在40摄氏度；化学还原钯法中使用的包钯液为弱碱性，使用后为中性，较为环保。成品化学镀钯法的镀后钯层均匀，并且钯层厚度可控。另外传统工艺是在半成品时镀钯，这样丝材变硬，在后道加工时模具消耗量极大，本专利的化学镀钯方法可以最大程度的减小模具用量，节省资源。
(4)退火：利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH-CH3CHO+Cu+H2O)，用氮气加无水乙醇代替氮氢混合气进行退火保护，比氢气还原安全；退火温度为500℃；
(5)清洗：利用无水乙醇在高温蒸发时爆炸力打掉丝上的脏物；利用无水乙醇在高温蒸发时爆力打掉丝上的脏东西，代替去离子水清洗的步骤，可以节省用水量，节约用水。
(6)对清洗后的键合丝进行复绕。化学镀钯、退火、清洗和复绕一体完成，镀钯退火复绕速度为50米每分钟。

Claims (1)

1.一种磁性镀层铜键合丝的制备方法，其特征在于，包括以下步骤：
(1)熔铸和拉丝：在熔铸过程中加入0.003％-0.05％的硅、0.001％-0.005％的银和0.005％-0.01％的锰，加热方式采用中频加热，连铸方式采用下引式真空连铸，并控制熔铸和拉丝条件为：熔铸温度为1100-1300℃，真空度1.0*10-5Mpa，精炼时间20-40分钟，连铸速度150-300mm/分钟，形成的铜坯直径为3-8mm，拉丝速度为50-100m/min；
(2)电镀磁性镀层：将铜键合丝成品在退火后单根放入铁的电镀液中进行电镀铁层，其中铁的电镀液的铁离子浓度为20-50克每升，铁层厚度为50-500μm；然后再把镀有铁层的铜键合丝放入铁钴的电镀液中进行电镀铁钴合金层，其中铁钴的电镀液的铁离子浓度为20-50克每升，钴离子的浓度为10-20克每升，铁钴合金层厚度为200-800μm；
镀钯液成分为6g/LPdCl、10g/LNaH2PO2、100ml/LNH4OH、10g/LNH4Cl；
(3)化学镀钯：将铜键合丝成品在退火后单根放入镀钯液进行化学镀钯，镀钯液的钯离子浓度为5-20克每升，镀钯条件为镀钯液的pH值控制在9.5-10.3，镀钯液的温度控制在40-60摄氏度；
(4)退火：利用无水乙醇还原氧化铜的特性(CuO+CH3CH2OH-CH3CHO+Cu+H2O)，用氮气加无水乙醇代替氮氢混合气进行退火保护；退火温度为250～500℃；
(5)清洗：利用无水乙醇在高温蒸发时爆炸力打掉丝上的脏物；
(6)对清洗后的键合丝进行复绕；
化学镀钯、退火、清洗和复绕一体完成，镀钯退火复绕速度为50米每分钟。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109449133A (zh) * 2018-10-20 2019-03-08 深圳粤通应用材料有限公司 一种铜镀纯镍键合丝及其制备方法
CN110665990A (zh) * 2019-09-30 2020-01-10 江西振鹰智能科技有限公司 一种铜合金线材及其制备方法和包含该线材的电缆
CN114005807A (zh) * 2021-10-09 2022-02-01 江西蓝微电子科技有限公司 一种镀金钯铜基键合丝及其制备方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106373973B (zh) * 2016-11-24 2019-11-05 江苏骏龙光电科技股份有限公司 一种抗干扰图像传感器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163194A (ja) * 1985-01-09 1986-07-23 Toshiba Corp 半導体素子用ボンデイング線
CN103560120A (zh) * 2013-11-13 2014-02-05 北京达博有色金属焊料有限责任公司 一种化学法镀钯铜键合丝及其制备方法
CN105097748A (zh) * 2014-04-23 2015-11-25 北京富纳特创新科技有限公司 键合线以及半导体封装件

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102121077B (zh) * 2011-01-21 2012-11-28 宁波康强电子股份有限公司 一种键合金丝的制备方法
CN204350556U (zh) * 2014-04-10 2015-05-20 苏州驭奇材料科技有限公司 一种电磁屏蔽散热膜

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163194A (ja) * 1985-01-09 1986-07-23 Toshiba Corp 半導体素子用ボンデイング線
CN103560120A (zh) * 2013-11-13 2014-02-05 北京达博有色金属焊料有限责任公司 一种化学法镀钯铜键合丝及其制备方法
CN105097748A (zh) * 2014-04-23 2015-11-25 北京富纳特创新科技有限公司 键合线以及半导体封装件

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109449133A (zh) * 2018-10-20 2019-03-08 深圳粤通应用材料有限公司 一种铜镀纯镍键合丝及其制备方法
CN110665990A (zh) * 2019-09-30 2020-01-10 江西振鹰智能科技有限公司 一种铜合金线材及其制备方法和包含该线材的电缆
CN114005807A (zh) * 2021-10-09 2022-02-01 江西蓝微电子科技有限公司 一种镀金钯铜基键合丝及其制备方法

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