CN109309015A - A kind of two stages formula electrophoresis process - Google Patents

A kind of two stages formula electrophoresis process Download PDF

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Publication number
CN109309015A
CN109309015A CN201710615673.1A CN201710615673A CN109309015A CN 109309015 A CN109309015 A CN 109309015A CN 201710615673 A CN201710615673 A CN 201710615673A CN 109309015 A CN109309015 A CN 109309015A
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China
Prior art keywords
electrophoresis
liquid
glass
glass powder
stage
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CN201710615673.1A
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Chinese (zh)
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CN109309015B (en
Inventor
王晓捧
王彦君
孙晨光
徐长坡
陈澄
武卫
梁效峰
史丽萍
杨玉聪
蔡瑞祥
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TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT Co Ltd
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TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT Co Ltd
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Priority to CN201710615673.1A priority Critical patent/CN109309015B/en
Publication of CN109309015A publication Critical patent/CN109309015A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A kind of two stages formula electrophoresis process, step include: S1, using low concentration electrophoresis liquid to silicon wafer carry out electrophoresis;S2, the glass powder and annex solution that rated capacity is added into used electrophoresis liquid;S3, it the silicon wafer after the S1 is placed in the electrophoresis liquid of the S2 carries out electrophoresis.The present invention is compared to the beneficial effect of original process: electrophoresis process is more stable, in slot the moulding of glass more evenly, it is more symmetrical, enhance product electrical property stabilization, reduce product defect rate;The secondary use of electrophoresis liquid has achieved the purpose that the utilization rate for improving glass powder, has reduced electrophoresis cost.

Description

A kind of two stages formula electrophoresis process
Technical field
The application belongs to silicon wafer wet etching technique field, specifically, being related to a kind of two stages formula electrophoresis process.
Background technique
GPP is the abbreviation of Glassivation passivation parts, is the general designation of glassivation class device.The production Product are exactly to fire one layer of glass to the tube core P/N junction surrounding of quasi- segmentation on the basis of existing product ordinary silicon rectified diffusion piece Glass, glass and monocrystalline silicon have good binding characteristic, and P/N knot is made to obtain optimal protection, from the invasion of external environment, improve The stability of device, reliability are splendid.
Method used at present in monocrystalline silicon surface coating glass passivation layer is using electrophoresis, required for generally reaching Glassy layer thickness if, electrophoresis liquid needs certain concentration, and the highly concentrated electrophoresis liquid of glass powder carries out electrophoresis and can usually go out It is now many bad, for example electrophoresis process is unstable, glass model is asymmetric in slot, the undesirable production of glass in batch slot even occurs Product, leading to GPP mass, there are hidden danger.Unfavorable condition is as shown in figures 1 and 3.
Summary of the invention
In view of this, can be the technical problem to be solved by the application is to provide a kind of two stages formula electrophoresis process It can guarantee the thickness of electrophoresis glass, and the quality of electrophoresis glass can be improved well, reduce electrophoresis cost.
In order to solve the above-mentioned technical problem, this application discloses a kind of two stages formula electrophoresis processes, and use following technology Scheme is realized:
A kind of two stages formula electrophoresis process, step include: S1, using first stage electrophoresis liquid to silicon wafer carry out electrophoresis;S2, Glass powder and annex solution are added into the used first stage electrophoresis liquid, and second stage electrophoresis liquid is made;S3, will pass through Silicon wafer after the S1 is placed in the second stage electrophoresis liquid and carries out electrophoresis.
Further, the first stage electrophoresis liquid is low concentration solution, and the low concentration solution is every 8L~9L solvent Middle addition 60g~120g glass powder and 2ml~7ml annex solution.
Further, the second stage electrophoresis liquid specifically: glass described in 30g~50g is added in every 8L~9L solvent Annex solution described in powder and 1ml~5ml.
Further, the annex solution is electrically charged solution.
Further, the annex solution is electrically charged acid solution.
Preferably, first stage electrophoresis liquid described in every 8L~9L is 30min for the time of electrophoresis.
Compared with prior art lithographic technique, the application can be obtained including following technical effect: compared to original in height The technique that an electrophoresis is carried out in concentration glass powder electrophoresis liquid, the application two stages formula electrophoresis process electrophoresis process is more stable, slot The moulding of interior glass more evenly, it is more symmetrical, enhance product electrical property stabilization, reduce product defect rate;Compared to directly dropping Electrophoresis twice is carried out in the electrophoresis liquid of low glass powder concentration, the secondary use of the application electrophoresis liquid has reached and improved glass powder The purpose of utilization rate reduces electrophoresis cost.
Certainly, any product for implementing the application must be not necessarily required to reach all the above technical effect simultaneously.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is that the application does not use glass planar figure in two stages formula electrophoresis process electrophoresis pit.
Fig. 2 is the application using glass planar figure in two stages formula electrophoresis process electrophoresis pit.
Fig. 3 is that the application does not use glass section figure in two stages formula electrophoresis process electrophoresis pit.
Fig. 4 is the application using glass section figure in two stages formula electrophoresis process electrophoresis pit.
Fig. 5 is the application using glass in two stages formula electrophoresis process pit along altitude curve figure.
Specific embodiment
Presently filed embodiment is described in detail below in conjunction with accompanying drawings and embodiments, how the application is applied whereby Technological means solves technical problem and reaches the realization process of technical effect to fully understand and implement.
A kind of two stages formula electrophoresis process, step include: S1, using low glass powder concentration electrophoresis liquid to silicon wafer carry out electricity Swimming;S2, glass powder and annex solution are added into the electrophoresis liquid after use in S1;S3, the silicon wafer after S1 electrophoresis is placed on S2 Electrophoresis is carried out in obtained electrophoresis liquid.
In step S1, i.e., first stage, the electrophoresis liquid of low glass powder concentration refer specifically to, and 60g is added in every 8L~9L solvent ~120g glass powder and 2ml~7ml annex solution.The solvent that the present embodiment is selected is acetone.Test data and result such as 1 institute of table Show, done six groups of experiments, has chosen the addition between the glass powder value and six 2ml~7ml between six 60g~120g respectively The value of liquid carries out first stage electrophoresis to same silicon wafer in same environment, and silicon wafer weight gain is moderate after observing electrophoresis, in slot The plane of glass and section are normal.
In step S2, i.e. the specific additive amount of second stage, glass powder and annex solution is to add 30g in every 8L~9L solvent ~50g glass powder and 1ml~5ml annex solution.Test data and the results are shown in Table 2.Four groups of experiments have been done, have had chosen four respectively The value of the annex solution between glass powder value and four 1ml~5ml between a 30g~50g, to same silicon wafer in same ring Second stage electrophoresis is carried out in border, silicon wafer weight gain is moderate after observing electrophoresis, and the plane of glass and section are normal in slot.
The electrophoresis time of 8L~9L amount of solution is 30min in step S1 and/or S3.
Annex solution main component is a kind of acid, and main function is that charge is provided in electrophoresis, carries glass powder along electric field Direction is deposited in product groove.
Two stages electrophoresis carried out after slot in glass plan view as shown in Fig. 2, sectional view as shown in figure 4, glass along, Moulding is symmetrical in slot.
1 first stage of table electrophoresis tests data and result
Serial number It increases weight (mg) Monolithic electrophoresis time (s) Effect after electrophoresis Glass edge Moulding in slot
1 804 58 OK OK OK
2 831 72 OK OK OK
3 831 100 OK OK OK
4 824 177 OK OK OK
2 second stage electrophoresis tests data of table and result
By the recycling of electrophoresis liquid, i.e. two stages formula electrophoresis process, glass powder utilization rate improves 1.1% (i.e. by not It improves using the 73.75% of two stages formula electrophoresis process to 74.85%), the loss of monolithic product glass powder reduces 0.18g/ piece (i.e. by the 1.35g/ piece of two stages formula electrophoresis process not being used to be down to 1.170g/ piece).Specific calculation is by twice The above test, selects tens silicon wafers to carry out electrophoresis in a certain amount of electrophoresis liquid every time, calculates and test total glass powder every time Input amount a and batch silicon wafer gain in weight b, b account for a percentage be this test glass powder utilization rate, test of many times is total The percentage that gain in weight accounts for total input amount is final glass powder utilization rate, calculated result 74.85%.Total augment weight amount is divided by total The piece number, obtains monolithic waste, and calculated result is 1.170g/ piece.
After two stages formula electrophoresis process, glass in the slot of the test silicon wafer of different model and size is carried out along height Measurement draws maximum value curve, minimum value curve peace Mean curve of the glass along height according to measurement result, as shown in Figure 5. Maximum value occasionally has more than the case where 20um, and then control meets the requirement of GPP production within 20um to average value.It observes simultaneously Thickness of glass and turning thickness in slot also comply with the requirement of GPP production.
The beneficial effects of the present invention are: compared to original work for carrying out an electrophoresis in high concentration glass powder electrophoresis liquid Skill, the application two stages formula electrophoresis process electrophoresis process is more stable, in slot the moulding of glass more evenly, it is more symmetrical, enhance product The stabilization of electrical property reduces product defect rate;Electrophoresis twice is carried out compared in the electrophoresis liquid for directly reducing glass powder concentration, The secondary use of the application electrophoresis liquid has achieved the purpose that the utilization rate for improving glass powder, has reduced electrophoresis cost.
Above to formula electrophoresis process of a kind of two stages provided by the embodiment of the present application, it is described in detail.The above reality The explanation for applying example is merely used to help understand the structure and its core concept of the application;Meanwhile for the general technology of this field Personnel, according to the thought of the application, there will be changes in the specific implementation manner and application range, in conclusion this theory Bright book content should not be construed as the limitation to the application.
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer It is understood that different manufacturers may call the same component with different nouns.Present specification and claims not with The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Logical The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit In "." substantially " refer within the acceptable error range, those skilled in the art can within a certain error range solve described in Technical problem basically reaches the technical effect.Specification subsequent descriptions are to implement the better embodiment of the application, so described Description is not intended to limit the scope of the present application still for the purpose of the rule for illustrating the application.The protection scope of the application As defined by the appended claims.
It should also be noted that, the terms "include", "comprise" or its any other variant are intended to nonexcludability Include, so that commodity or system including a series of elements not only include those elements, but also including not clear The other element listed, or further include for this commodity or the intrinsic element of system.In the feelings not limited more Under condition, the element that is limited by sentence "including a ...", it is not excluded that in the commodity or system for including the element also There are other identical elements.
Above description shows and describes several preferred embodiments of the present application, but as previously described, it should be understood that the application Be not limited to forms disclosed herein, should not be regarded as an exclusion of other examples, and can be used for various other combinations, Modification and environment, and by the technology of above-mentioned introduction or related fields or can know in the application contemplated scope described herein Knowledge is modified.And changes and modifications made by those skilled in the art do not depart from spirit and scope, then all Ying Ben In the protection scope for applying for appended claims.

Claims (7)

1. a kind of two stages formula electrophoresis process, it is characterised in that: step include: S1, using first stage electrophoresis liquid to silicon wafer into Row electrophoresis;S2, glass powder and annex solution are added into the used first stage electrophoresis liquid, second stage electrophoresis is made Liquid;S3, it the silicon wafer after the S1 is placed in the second stage electrophoresis liquid carries out electrophoresis.
2. two stages formula electrophoresis process according to claim 1, it is characterised in that: the first stage electrophoresis liquid is low concentration Solution, the low concentration solution are that 60g~120g glass powder and 2ml~7ml annex solution are added in every 8L~9L solvent.
3. two stages formula electrophoresis process according to claim 1, it is characterised in that: the second stage electrophoresis liquid specifically: Annex solution described in glass powder described in 30g~50g and 1ml~5ml is added in every 8L~9L solvent.
4. -3 any two stages formula electrophoresis process according to claim 1, it is characterised in that: the annex solution is electrically charged Solution.
5. two stages formula electrophoresis process according to claim 4, it is characterised in that: the annex solution is acid solution.
6. two stages formula electrophoresis process according to claim 2, it is characterised in that: first stage electrophoresis liquid described in every 8L~9L Time for electrophoresis is 30min.
7. two stages formula electrophoresis process according to claim 3, it is characterised in that: second stage electrophoresis liquid described in every 8L~9L Time for electrophoresis is 30min.
CN201710615673.1A 2017-07-26 2017-07-26 Two-stage electrophoresis process Active CN109309015B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101055839A (en) * 2007-04-06 2007-10-17 天津中环半导体股份有限公司 Electrophoresis method glass passivation technology of the silicon rectifier
CN102079893A (en) * 2009-11-26 2011-06-01 浙江常山隆昌电子有限公司 Glass passivation pellet (GPP) chip electrophoresis fluid
CN204999994U (en) * 2015-09-02 2016-01-27 四川洪芯微科技有限公司 Semiconducting glass electrophoresis apparatus that passivates
WO2016067477A1 (en) * 2014-10-31 2016-05-06 新電元工業株式会社 Method for manufacturing semiconductor device and resist glass

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101055839A (en) * 2007-04-06 2007-10-17 天津中环半导体股份有限公司 Electrophoresis method glass passivation technology of the silicon rectifier
CN102079893A (en) * 2009-11-26 2011-06-01 浙江常山隆昌电子有限公司 Glass passivation pellet (GPP) chip electrophoresis fluid
WO2016067477A1 (en) * 2014-10-31 2016-05-06 新電元工業株式会社 Method for manufacturing semiconductor device and resist glass
CN204999994U (en) * 2015-09-02 2016-01-27 四川洪芯微科技有限公司 Semiconducting glass electrophoresis apparatus that passivates

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