CN102194734A - Method for enlarging metal interconnected lithography process window - Google Patents
Method for enlarging metal interconnected lithography process window Download PDFInfo
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- CN102194734A CN102194734A CN2010101236259A CN201010123625A CN102194734A CN 102194734 A CN102194734 A CN 102194734A CN 2010101236259 A CN2010101236259 A CN 2010101236259A CN 201010123625 A CN201010123625 A CN 201010123625A CN 102194734 A CN102194734 A CN 102194734A
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- oxide layer
- temperature oxide
- low temperature
- process window
- plasma treatment
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Abstract
The invention discloses a method for enlarging a metal interconnected lithography process window. The metal interconnection is realized through a dual-damascenes structure which comprises through holes and grooves. The grooves are formed from a hard mask by a lithography process. The hard mask comprises a low-temperature oxide layer and an organic bottom antireflection coating which is formed above the low-temperature oxide layer, wherein after the low-temperature oxide layer is formed by a deposition process, the surface of the low-temperature oxide layer is processed by using active gas plasmas so as to improve the adhesion between the low-temperature oxide layer and the organic bottom antireflection coating.
Description
Technical field
The present invention relates to the silicon semiconductor device technical field, particularly a kind of method of lithographic process window of enlarged metal interconnection.
Background technology
Along with improving constantly of element integrated level in the integrated circuit, component size is constantly dwindled, and this also has higher requirement to interconnection technique.Industry adopts double damask structure (dual damascenestructure) to realize metal interconnected usually.According to double damask structure, in dielectric layer, successively form through hole and groove, in this groove, form interconnection, and by being interconnected to down interconnection or substrate in this through hole connection.In the process that forms double damask structure, need behind the etching through hole to fill the gap so that carry out trench lithography.When carrying out trench lithography, usually adopt thinner photoresist with obtain less critical size (criticaldimension, CD).Yet, because the unusual difficulty of thin photoresist transition diagram, therefore between gap packed layer and photoresist, use a kind of low temperature oxide cheaply (low temperature oxide, LTO) layer as hard mask (hard mask, HM).Can be with low temperature oxide layer with the photoresist figure transfer to dielectric layer with superperformance.But low temperature oxide is very unsound material, and the surface is very coarse.Can produce light acid behind the resist exposure, some light acid can diffuse into low temperature oxide layer, produce the photoresist trace, influence critical size consistency (critical dimension uniformity, CDU).Thus, (bottom antireflection coating is BARC) to improve performance to be formed with the motor spindle antireflecting coating usually on low temperature oxide layer.Yet, if the adhesiveness (adhesion) between low temperature oxide layer and the organic bottom antireflective coating is not high enough, after carrying out the exposure of littler live width, may cause excessive corrosion to the organic bottom antireflective coating, this will cause figure under the organic bottom antireflective coating can't keep the photoresist figure and cave in when etch step, thereby cause the metal interconnected inefficacy of follow-up formation, limited the metal interconnected lithographic process window of existing technology.
Summary of the invention
The object of the present invention is to provide a kind of method of lithographic process window of enlarged metal interconnection, the adhesiveness in the hard mask that uses when improving trench lithography between low temperature oxide layer and the organic bottom antireflective coating, thus enlarge its lithographic process window.
The invention provides a kind of method of lithographic process window of enlarged metal interconnection, described metal interconnected by comprising the double damask structure realization of through hole and groove, described groove uses hard mask to form by photoetching process, described hard mask contains low temperature oxide layer and the organic bottom antireflective coating that is formed on the described low temperature oxide layer, it is characterized in that, after forming described low temperature oxide layer by depositing operation, with the surface of the described low temperature oxide layer of active gases plasma treatment to improve the adhesiveness between described low temperature oxide layer and the described organic bottom antireflective coating.
Preferably, described active gases is O
3Gas.
Preferably, use O
3The time on the surface of the described low temperature oxide layer of plasma treatment is 10s～70s.
Preferably, described active gases is O
2Gas.
Preferably, use O
2The time on the surface of the described low temperature oxide layer of plasma treatment is 15s～90s.
Compared with prior art, the method of the lithographic process window of enlarged metal interconnection provided by the invention, when carrying out trench lithography, by surface with active gases plasma treatment low temperature oxide layer, make the surface of low temperature oxide layer become more smooth and fine and close, improved the adhesiveness between low temperature oxide layer and the organic bottom antireflective coating, even carry out the exposure of littler live width, also can keep the photoresist figure on the organic bottom antireflective coating, and then enlarge metal interconnected lithographic process window.In addition, because by surface with active gases plasma treatment low temperature oxide layer, make the surface of low temperature oxide layer become more smooth and fine and close, having improved the consistency of the critical size that detects the back of developing, thus the difference of the square resistance of metal interconnected diverse location when reducing wafer acceptance testing.
Description of drawings
Fig. 1 is the structural representation of film storehouse in this method.
Embodiment
For purpose of the present invention, feature are become apparent, the specific embodiment of the present invention is further described below in conjunction with accompanying drawing.
Mention in background technology, adhesiveness in the prior art between low temperature oxide layer and the organic bottom antireflective coating is not high enough, after the exposure of carrying out littler live width, may cause excessive corrosion to the organic bottom antireflective coating, this will cause photoresist figure on the organic bottom antireflective coating can't keep and cave in, thereby cause the metal interconnected inefficacy of follow-up formation.
Core concept of the present invention is that the surface by with active gases plasma treatment low temperature oxide layer makes the surface of low temperature oxide layer become more smooth and fine and close, improves the adhesiveness between low temperature oxide layer and the organic bottom antireflective coating.
In the method for the lithographic process window of enlarged metal of the present invention interconnection, metal interconnectedly realize, and groove uses hard mask to form by photoetching process by the double damask structure that comprises through hole and groove.This hard mask contains low temperature oxide layer and the organic bottom antireflective coating that is formed on this low temperature oxide layer.Wherein, form low temperature oxide layer by depositing operation after, with the surface of this low temperature oxide layer of active gases plasma treatment with the adhesiveness between the organic bottom antireflective coating that improves this low temperature oxide layer and follow-up formation.
See also Fig. 1, Fig. 1 is the structural representation of film storehouse in this method.As described in Figure 1, the film storehouse is low temperature oxide layer 211, is formed at the organic bottom antireflective coating 212 on this low temperature oxide layer 211 and is formed at photoresist 22 on this organic bottom antireflective coating 212.Certainly, other material layer that constitutes hard mask can also be arranged under low temperature oxide layer 211, such as tetraethoxysilane (Tetraethylorthosilicate, TEOS) layer etc.Wherein, after forming low temperature oxide layer 211 by depositing operation, surface with this low temperature oxide layer 211 of active gases plasma treatment, this makes the surface of low temperature oxide layer 211 become more smooth and fine and close, has improved the adhesiveness between low temperature oxide layer 211 and the organic bottom antireflective coating 212.This active gases is preferably O
3Gas, its advantage is the oxidation activity height.Use O
3The time on the surface of the described low temperature oxide layer of plasma treatment is 10s～70s.If the plasma treatment time is too short then do not reach effect, the time is oversize then to cause peeling off of low temperature oxide layer 211 easily.In addition, this active gases can also be O
2Gas, its advantage are to cause the damage of sull and are easy to and existing semiconductor fabrication process gas compatibility.Use O
2The time on the surface of the described low temperature oxide layer of plasma treatment is 15s～90s.
Using existing technology to realize in the experiment of littler live width (for example 63nm), see also table 1 and table 2, table 1 does not carry out the square resistance (unit ohm/micron) of the metal interconnected diverse location of the resulting copper of plasma treatment after the low temperature oxide layer for deposition, and table 2 is for depositing the square resistance (unit ohm/micron) that has carried out the metal interconnected diverse location of the resulting copper of plasma treatment after the low temperature oxide layer.As can be seen from Table 1, the surface of this low temperature oxide layer of plasma treatment of no use, then the metal interconnected square resistance of copper is all very big, and this shows that the photoresist figure on the organic bottom antireflective coating has taken place to cave in, and then causes copper
Table 1
| -4 | -3 | -2 | -1 | 0 | 1 | 2 | 3 |
| 1999.83 | 1999.82 | ||||||
| 1999.84 | 1999.84 | 1999.84 | 1999.83 | ||||
| 1999.84 | 1999.84 | 1999.83 | 1999.84 | 1999.83 | 1999.83 | ||
| 1999.84 | 1999.83 | 1999.84 | 1999.84 | 1999.83 | 1999.83 | 1999.83 | 1999.83 |
| 1999.82 | 1999.83 | 1999.82 | 1999.83 | 1999.83 | 1999.83 | 1999.84 | 1999.83 |
| 1999.82 | 1999.83 | 1999.82 | 1999.82 | 1999.82 | 1999.84 | 1999.84 | 1999.81 |
| 1999.83 | 1999.82 | 1999.83 | 1999.83 | 1999.83 | 1999.84 | 1999.83 | 1999.70 |
| 1999.82 | 1999.81 | 1999.83 | 1999.83 | 1999.83 | 1999.84 | 1999.84 | 1999.81 |
| 1999.79 | 1999.84 | 1999.84 | 1999.84 | 1999.83 | 1999.84 | ||
| 1999.83 | 1999.82 | 1999.82 | 1999.83 | ||||
| 1999.81 | 1999.81 |
Table 2
| -4 | -3 | -2 | -1 | 0 | 1 | 2 | 3 |
| 3.99 | 3.97 | ||||||
| 3.85 | 3.82 | 3.93 | 4.19 | ||||
| 3.83 | 4.03 | 3.97 | 3.95 | 3.82 | 4.18 | ||
| 4.14 | 4.09 | 4.07 | 3.98 | 3.84 | 3.97 | 4.11 | 3.74 |
| 4.02 | 3.92 | 3.70 | 3.62 | 3.76 | 4.07 | 3.90 | 3.97 |
| 4.15 | 4.09 | 3.95 | 3.60 | 3.59 | 3.97 | 3.80 | 3.90 |
| 4.24 | 3.86 | 3.69 | 3.88 | 3.92 | 3.90 | 4.06 | 4.25 |
| 3.82 | 3.59 | 4.01 | 3.84 | 3.85 | 3.79 | 4.20 | 5.67 |
| 4.23 | 3.72 | 3.72 | 3.67 | 4.19 | 4.20 | ||
| 4.01 | 4.01 | 4.03 | 4.17 | ||||
| 4.57 | 5.90 |
Metal interconnected inefficacy.And in table 2, behind the surface with this low temperature oxide layer of plasma treatment, the metal interconnected square resistance of copper is all less, has realized that well copper is metal interconnected.This shows,, even carry out the exposure of littler live width, also can keep the photoresist figure on the organic bottom antireflective coating, and then make follow-up technology be carried out, realize metal interconnected by surface with active gases plasma treatment low temperature oxide layer.This has just enlarged metal interconnected lithographic process window.In addition, experiment also shows, by surface with active gases plasma treatment low temperature oxide layer, can improve the back of developing and detect (after developmentinspection, the consistency of critical size ADI), thereby reduce wafer acceptance testing (wafer acceptancetest, the difference of the square resistance of metal interconnected diverse location in the time of WAT).
In sum, the method of the lithographic process window of enlarged metal interconnection provided by the invention, when carrying out trench lithography, by surface with active gases plasma treatment low temperature oxide layer, make the surface of low temperature oxide layer become more smooth and fine and close, improved the adhesiveness between low temperature oxide layer and the organic bottom antireflective coating, even carry out the exposure of littler live width, also can keep the photoresist figure on the organic bottom antireflective coating, and then enlarge metal interconnected lithographic process window.In addition, because by surface with active gases plasma treatment low temperature oxide layer, make the surface of low temperature oxide layer become more smooth and fine and close, having improved the consistency of the critical size that detects the back of developing, thus the difference of the square resistance of metal interconnected diverse location when reducing wafer acceptance testing.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (5)
1. the method for the lithographic process window of enlarged metal interconnection, described metal interconnected by comprising the double damask structure realization of through hole and groove, described groove uses hard mask to form by photoetching process, described hard mask contains low temperature oxide layer and the organic bottom antireflective coating that is formed on the described low temperature oxide layer, it is characterized in that, after forming described low temperature oxide layer by depositing operation, with the surface of the described low temperature oxide layer of active gases plasma treatment to improve the adhesiveness between described low temperature oxide layer and the described organic bottom antireflective coating.
2. the method for the lithographic process window of enlarged metal interconnection as claimed in claim 1 is characterized in that described active gases is O
3Gas.
3. the method for the lithographic process window of enlarged metal interconnection as claimed in claim 2 is characterized in that, uses O
3The time on the surface of the described low temperature oxide layer of plasma treatment is 10s～70s.
4. the method for the lithographic process window of enlarged metal interconnection as claimed in claim 1 is characterized in that described active gases is O
2Gas.
5. the method for the lithographic process window of enlarged metal interconnection as claimed in claim 4 is characterized in that, uses O
2The time on the surface of the described low temperature oxide layer of plasma treatment is 15s～90s.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538286A (en) * | 2015-01-05 | 2015-04-22 | 武汉新芯集成电路制造有限公司 | Method for reducing and adjusting surface energy of film |
| CN105206617A (en) * | 2015-08-26 | 2015-12-30 | 武汉华星光电技术有限公司 | Manufacturing method of array substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101312150A (en) * | 2007-05-21 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | Dual mosaic structure forming method |
| CN101562134A (en) * | 2008-04-17 | 2009-10-21 | 上海华虹Nec电子有限公司 | Method for preparing tunnel window |
| CN101593689A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The formation method and the double mosaic structure manufacture method of photoengraving pattern |
-
2010
- 2010-03-12 CN CN2010101236259A patent/CN102194734A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101312150A (en) * | 2007-05-21 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | Dual mosaic structure forming method |
| CN101562134A (en) * | 2008-04-17 | 2009-10-21 | 上海华虹Nec电子有限公司 | Method for preparing tunnel window |
| CN101593689A (en) * | 2008-05-29 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The formation method and the double mosaic structure manufacture method of photoengraving pattern |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538286A (en) * | 2015-01-05 | 2015-04-22 | 武汉新芯集成电路制造有限公司 | Method for reducing and adjusting surface energy of film |
| CN104538286B (en) * | 2015-01-05 | 2018-06-22 | 武汉新芯集成电路制造有限公司 | The method for reducing and adjusting film surface energy |
| CN105206617A (en) * | 2015-08-26 | 2015-12-30 | 武汉华星光电技术有限公司 | Manufacturing method of array substrate |
| CN105206617B (en) * | 2015-08-26 | 2018-09-18 | 武汉华星光电技术有限公司 | The manufacturing method of array substrate |
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