CN109305763B - 一种高透型单银低辐射镀膜玻璃 - Google Patents

一种高透型单银低辐射镀膜玻璃 Download PDF

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CN109305763B
CN109305763B CN201810999847.3A CN201810999847A CN109305763B CN 109305763 B CN109305763 B CN 109305763B CN 201810999847 A CN201810999847 A CN 201810999847A CN 109305763 B CN109305763 B CN 109305763B
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姚衡
罗文忠
姚永凯
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Abstract

本发明提供了一种高透型单银低辐射镀膜玻璃及其制备方法，属于磁控溅射工艺。该技术是在原有单银膜层结构的基础上，通过改变膜层材料的吸收提高了膜层的透过率。一种高透型单银低辐射镀膜玻璃，包括玻璃基片和镀膜层，所述镀膜层自所述玻璃层向外共有八层复合膜层。其中第一层为SiNx膜，第二层为ZnAlOx膜，第三层为NiCr膜，第四层为Ag膜，第五层为NiCr膜，第六层为ZnAlOx膜，第七层为ZnAlOx膜，第八层为SiNx膜，各膜层通过磁控溅射镀膜工艺依次溅射在玻璃基片上。优点：本发明具有高透过和低辐射率的特点。

Description

一种高透型单银低辐射镀膜玻璃
技术领域
本发明涉及特种玻璃制造技术领域，具体为一种高透型单银低辐射镀膜玻璃。
背景技术
低辐射镀膜玻璃是利用银具有低辐射，对红外线具有很高的反射率的特性，从而产生了很好的隔热保温效果。高透型低辐射镀膜玻璃是在保证有低辐射效果的前提下，对可见光有较高的透过率。传统的高透低辐射镀膜玻璃为了增加透过会适当的降低镀膜玻璃热工性能，造成高透的玻璃隔热性能较差。
发明内容
本发明的目的在于提供一种高透型单银低辐射镀膜玻璃，以解决现有低辐射镀膜玻璃采光不足的问题，达到节能与采光兼容的目的。
为实现上述目的，本发明提供如下技术方案：
一种高透型单银低辐射镀膜玻璃，包括玻璃基片和镀膜层，所述镀膜层自所述玻璃层向外共有八层复合膜层；其中第一层为SiNx膜，第二层为ZnAlOx膜，第三层为NiC膜，第四层为Ag膜，第五层为NiC膜，第六层为ZnAlOx膜，第七层为ZnAlOx膜，第八层为SiNx膜；所述玻璃基片为透过率89%以上的优质白玻浮法原片；第一层，第二层为电介质层，第三层至第五层为低辐射层，第六层为掺杂氧化铝的氧化锌层低吸收保护层，第七层为增透层，第八层为电介质层。
本发明还提供了一种高透型单银低辐射镀膜玻璃的制备方法，利用磁控溅射镀膜，包括以下步骤：
溅射第一层SiNx层：靶材数量为磁控溅射交流旋转靶2-8根,中频交流旋转阴极，靶材为硅铝（SiAl Si：Al=9:1）靶，工艺气体配置为氩气氮气，具体比例为氩气：氮气=1:1.17，溅射压力为3~5×10-3mbar，镀膜厚度为10~30nm（最佳为18~22nm）；
溅射第二层ZnAlOx层：靶材数量为磁控溅射交流靶2-4根，中频交流旋转阴极，靶材为锌铝（ZnAl Zn：Al=98:2）靶，工艺气体配置为氩气，氧气，具体比例为氩气：氧气=1:1.67，溅射压力为3~5×10-3mbar，镀膜厚度为10~30nm（最佳为18~22nm）；
溅射第三层NiCr层：靶材数量为直流平面靶1副，直流平面阴极，靶材为镍铬（NiCrNi：Cr=80:20）靶，工艺气体为纯氩（Ar），溅射压力为2~4×10-3mbar，镀膜厚度为0.1~0.5nm；
溅射第四层Ag层：靶材数量为直流平面靶1副，直流平面阴极，靶材为银（Ag）靶，工艺气体为纯氩（Ar），溅射压力为2~4×10-3mbar，镀膜厚度为3~9nm；
溅射第五层NiCr层：靶材数量为直流平面靶1副，直流平面阴极，靶材为镍铬（NiCrNi：Cr=80:20）靶，工艺气体为纯氩（Ar），溅射压力为2~4×10-3mbar，镀膜厚度为0.3~0.7nm；
溅射第六层ZnAlOx（欠氧）层：靶材数量为磁控溅射交流靶2根，中频交流旋转阴极，靶材为锌铝（ZnAl Zn：Al=98:2）靶，工艺气体配置为氩气，氧气，具体比例为氩气：氧气=5:1，溅射压力为3~5×10-3mbar，镀膜厚度为10~20nm；
溅射第七层ZnAlOx层：靶材数量为磁控溅射交流靶2-4根，中频交流旋转阴极，靶材为锌铝（ZnAl Zn：Al=98:2）靶，工艺气体配置为氩气，氧气，具体比例为氩气：氧气=1:1.67，溅射压力为3~5×10-3mbar，镀膜厚度为10~40nm；
溅射第八层SiNx层：靶材数量为磁控溅射交流旋转靶2-8根，中频交流旋转阴极，靶材为硅铝（SiAl Si：Al=9:1）靶，工艺气体配置为氩气氮气，具体比例为氩气：氮气=1:1.17，溅射压力为3~5×10-3mbar，镀膜厚度为20~50nm；
膜层总厚度在85-100nm之间，工艺走速在4-6米/min之间。
本发明的技术效果和优点：单片玻璃透过率＞85%，外观颜色为中性色，6mm(LOW-E)+12air+6（白玻）合中空后在美国NFRC标准下，利用WINDOW7.2软件计算U值为1.8，遮阳为0.66。
附图说明
附图1为本发明的结构示意图。
附图中，0-玻璃基板，1-SiNx层,2-ZnAlOx层,3-NiCr层,4-Ag层,5-NiCr层,6-ZnAlOx（欠氧）层,7-ZnAlOx层，8-SiNx层。
具体实施方式
下面结合附图，对本发明实施例进行详细说明。
参考附图，玻璃基片0采用可见光透光率在89%以上的原料，利用磁控溅射镀膜，按照以下步骤进行加工：
溅射第一层SiNx层：靶材数量为磁控溅射交流旋转靶2-8根,中频交流旋转阴极，靶材为硅铝（SiAl Si：Al=9:1）靶，工艺气体配置为氩气氮气，具体比例为氩气：氮气=1:1.17，溅射压力为3~5×10-3mbar，镀膜厚度为10~30nm（最佳为18~22nm）；
溅射第二层ZnAlOx层：靶材数量为磁控溅射交流靶2-4根，中频交流旋转阴极，靶材为锌铝（ZnAl Zn：Al=98:2）靶，工艺气体配置为氩气，氧气，具体比例为氩气：氧气=1:1.67，溅射压力为3~5×10-3mbar，镀膜厚度为10~30nm（最佳为18~22nm）；
溅射第三层NiCr层：靶材数量为直流平面靶1副，直流平面阴极，靶材为镍铬（NiCrNi：Cr=80:20）靶，工艺气体为纯氩（Ar），溅射压力为2~4×10-3mbar，镀膜厚度为0.1~0.5nm；
溅射第四层Ag层：靶材数量为直流平面靶1副，直流平面阴极，靶材为银（Ag）靶，工艺气体为纯氩（Ar），溅射压力为2~4×10-3mbar，镀膜厚度为3~9nm；
溅射第五层NiCr层：靶材数量为直流平面靶1副，直流平面阴极，靶材为镍铬（NiCrNi：Cr=80:20）靶，工艺气体为纯氩（Ar），溅射压力为2~4×10-3mbar，镀膜厚度为0.3~0.7nm；
溅射第六层ZnAlOx（欠氧）层：靶材数量为磁控溅射交流靶2根，中频交流旋转阴极，靶材为锌铝（ZnAl Zn：Al=98:2）靶，工艺气体配置为氩气，氧气，具体比例为氩气：氧气=5:1，溅射压力为3~5×10-3mbar，镀膜厚度为10~20nm；
溅射第七层ZnAlOx层：靶材数量为磁控溅射交流靶2-4根，中频交流旋转阴极，靶材为锌铝（ZnAl Zn：Al=98:2）靶，工艺气体配置为氩气，氧气，具体比例为氩气：氧气=1:1.67，溅射压力为3~5×10-3mbar，镀膜厚度为10~40nm；
溅射第八层SiNx层：靶材数量为磁控溅射交流旋转靶2-8根，中频交流旋转阴极，靶材为硅铝（SiAl Si：Al=9:1）靶，工艺气体配置为氩气氮气，具体比例为氩气：氮气=1:1.17，溅射压力为3~5×10-3mbar，镀膜厚度为20~50nm；
膜层总厚度在85-100nm之间，工艺走速在4-6米/min之间。

Claims (1)

1.一种高透型单银低辐射镀膜玻璃制备方法，采用磁控溅射工艺，其特征在于：其制备方法包括以下步骤：
1）. 溅射第一层SiNx层：靶材数量为磁控溅射交流旋转靶2-8根,中频交流旋转阴极，靶材为硅铝靶，工艺气体配置为氩气氮气，具体比例为氩气：氮气=1:1.17，溅射压力为3~5×10-3mbar，镀膜厚度为10~30nm；
2）.溅射第二层ZnAlOx层：靶材数量为磁控溅射交流靶2-4根，中频交流旋转阴极，靶材为锌铝靶，工艺气体配置为氩气，氧气，具体比例为氩气：氧气=1:1.67，溅射压力为3~5×10-3mbar，镀膜厚度为10~30nm；
3).溅射第三层NiCr层：靶材数量为直流平面靶1副，直流平面阴极，靶材为镍铬靶，工艺气体为纯氩，溅射压力为2~4×10-3mbar，镀膜厚度为0.1~0.5nm；
4).溅射第四层Ag层：靶材数量为直流平面靶1副，直流平面阴极，靶材为银靶，工艺气体为纯氩，溅射压力为2~4×10-3mbar，镀膜厚度为3~9nm；
5). 溅射第五层NiCr层：靶材数量为直流平面靶1副，直流平面阴极，靶材为镍铬靶，工艺气体为纯氩，溅射压力为2~4×10-3mbar，镀膜厚度为0.3~0.7nm；
6).溅射第六层ZnAlOx层：靶材数量为磁控溅射交流靶2根，中频交流旋转阴极，靶材为锌铝靶，工艺气体配置为氩气，氧气，具体比例为氩气：氧气=5:1，溅射压力为3~5×10- 3mbar，镀膜厚度为10~20nm；
7）.溅射第七层ZnAlOx层：靶材数量为磁控溅射交流靶2-4根，中频交流旋转阴极，靶材为锌铝靶，工艺气体配置为氩气，氧气，具体比例为氩气：氧气=1:1.67，溅射压力为3~5×10-3mbar，镀膜厚度为10~40nm；
8）. 溅射第八层SiNx层：靶材数量为磁控溅射交流旋转靶2-8根，中频交流旋转阴极，靶材为硅铝靶，工艺气体配置为氩气氮气，具体比例为氩气：氮气=1:1.17，溅射压力为3~5×10-3mbar，镀膜厚度为20~50nm；
9）. 膜层总厚度在85-100nm之间，工艺走速在4-6米/min之间。
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CN112679109A (zh) * 2020-12-11 2021-04-20 安徽凤阳玻璃有限公司 一种被动式低能耗离线可钢化low-e镀膜玻璃及其制备工艺
CN112679112A (zh) * 2020-12-11 2021-04-20 安徽凤阳玻璃有限公司 一种离线高透净色低辐射可钢镀膜玻璃及其制造方法
CN112624633A (zh) * 2020-12-11 2021-04-09 安徽凤阳玻璃有限公司 一种离线单银可钢化低辐射镀膜玻璃及其制备工艺
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