CN109300848A - Make the method and flexible array substrate of flexible array substrate - Google Patents
Make the method and flexible array substrate of flexible array substrate Download PDFInfo
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- CN109300848A CN109300848A CN201810972645.XA CN201810972645A CN109300848A CN 109300848 A CN109300848 A CN 109300848A CN 201810972645 A CN201810972645 A CN 201810972645A CN 109300848 A CN109300848 A CN 109300848A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Abstract
The present invention provides a kind of method for making flexible array substrate and flexible array substrate, the step of this method, is: the coating photoresist material on interlayer dielectric layer, and patterned process is carried out to Other substrate materials using halftone mask, the first different flatness layer of height is obtained, and makes part thinning of first flatness layer corresponding to viewing area；The present invention carries out image conversion processing to Other substrate materials by halftone mask, so that the second flat sublayer realizes inclined thinning, the thickness of the second flat sublayer is reduced, reduces the second Source and drain metal level at a distance from neutral surface, when being bent, be conducive to the stability of the second Source and drain metal level.
Description
Technical field
The present invention relates to a kind of field of display technology, in particular to a kind of method and flexibility for making flexible array substrate
Array substrate.
Background technique
In order to realize the narrow frame design of small size mobile phone, so that mobile phone has bigger screen accounting, industry is attempted side
Frame area reduces, and for border width is reduced, most effective method is substrate bending technology, by a part of cabling area of screen and drive
Dynamic IC and FPC is folded into the back side of screen together, the width of following frame region can be effectively reduced, if attempting to continue to subtract by rim area
It is small, it is necessary to overcome the problems, such as it is more, such as rim area reduce, along with VSS, the routing region VDD narrows, IR drop (IR pressure
Drop) it can increase therewith, panel uniformity is deteriorated.
In order to overcome this phenomenon, main flow direction is using double-deck netted SD (source drain) structure, such design
It can effectively reduce IR drop, improve panel uniformity.
As shown in Figure 1, flexible array substrate includes 111 ' of flexible substrate, the barrier layer that is arranged on 111 ' of flexible substrate
112 ', 113 ' of buffer layer being arranged on 112 ' of barrier layer, 12 ' of active layer that 113 ' of buffer layer is set, it is arranged in active layer
Upper first insulating layer, 13 ' of 12 ', 14 ' of gate metal layer being arranged on 13 ' of the first insulating layer, it is arranged on 14 ' of gate metal layer
15 ' of second insulating layer, 15 ' of second insulating layer is set 16 ' of the first Source and drain metal level, be arranged in the first source and drain metal
17 ' of interlayer dielectric layer, 18 ' of the first flatness layer that is arranged on 17 ' of interlayer dielectric layer on 16 ' of layer and it is arranged in the first flatness layer
19 ' of the second Source and drain metal level of upper 18 '；111 ' of flexible substrate includes viewing area 1a ' and bent area 1b '.
Wherein, 16 ' of the first Source and drain metal level and 19 ' of the second Source and drain metal level form the double-deck reticular structure, while can expire again
Foot and 14 ' of gate metal layer form storage capacitance.
But since 18 ' thickness of the first flatness layer is larger, it is below to be located at 19 ' of the second Source and drain metal level of bent area
Organic layer is thicker, leads to neutral surface of 19 ' of the second Source and drain metal level far from array substrate, is unfavorable for the stabilization of bent area bending
Property.Wherein, when neutral surface is that bent area is bent, the equal plane of the extruding force and drawing force being subject to.
Summary of the invention
The embodiment of the present invention provides a kind of method for making flexible array substrate and flexible array substrate；It is existing to solve
Flexible array substrate in the first flatness layer thickness between the first Source and drain metal level and the second Source and drain metal level it is larger, be unfavorable for
The technical issues of stability of bent area bending.
The embodiment of the present invention provides a kind of method for making flexible array substrate, and the flexible array substrate includes substrate knot
Structure layer, the substrat structure layer include viewing area for displaying images and are used for the curved of bending positioned at the viewing area side
Folding area, the method and step for making flexible array substrate include:
S1: the substrat structure layer is formed on the glass substrate；
S2: active layer, the first insulating layer, gate metal layer, second insulating layer are sequentially formed on the substrat structure layer
With the first Source and drain metal level；
S3: interlayer dielectric layer is formed in first Source and drain metal level, and forms the first contact hole in the bent area；
S4: the coating photoresist material on the interlayer dielectric layer；
S5: patterned process is carried out to the Other substrate materials using halftone mask, it is flat to obtain highly different first
Smooth layer, first flatness layer fill first contact hole, and first flatness layer is made to correspond to first contact
The part thinning of hole region.
In the method for production flexible array substrate of the invention, first flatness layer includes corresponding to the viewing area
The first flat sublayer and the second flat sublayer corresponding to first contact hole；
The height of the first flat sublayer is greater than the height of the described second flat sublayer.
In the method for production flexible array substrate of the invention, the thickness of the interlayer dielectric layer betweenBetween.
In the method for production flexible array substrate of the invention, the step S3 includes:
S31: the interlayer dielectric layer in first Source and drain metal level；
S32: carrying out image conversion processing to the interlayer dielectric layer, is formed positioned at the viewing area for being electrically connected institute
State the first aperture of active layer and the second aperture positioned at the bent area；
S33: in the viewing area, first aperture is corresponded to first insulating layer, the second insulating layer
Part carry out dry etch process, so that first aperture is connected to the active layer,
In the bent area, first insulating layer, the second insulating layer and the substrat structure layer are corresponded to
The part of second aperture carries out dry etch process, to form the first contact hole.
In the method for production flexible array substrate of the invention, the halftone mask includes corresponding to described first to connect
First transmittance section of contact hole region, corresponding to the viewing area the first aperture region the second transmittance section and correspondence
In the opaque portion in other regions of viewing area, the light transmittance of first transmittance section less than the second transmittance section light transmittance,
The light transmittance in the opaque portion is 0；
The Other substrate materials are positivity Other substrate materials, and the step S5 includes:
S51: by the way that first transmittance section to be corresponded to the region of the first contact hole described in the bent area, by institute
The second transmittance section is stated corresponding to the region of the first aperture described in the viewing area and by the opaque portion corresponding to described
Other regions of viewing area, and ultraviolet lighting processing is carried out to the Other substrate materials；
S52: carrying out development treatment to the Other substrate materials, obtains the first flatness layer and corresponds to first contact hole
Second flat sublayer, described having for connecting corresponding to the first flat sublayer of the viewing area and comprising the first aperture
Second contact hole of active layer and the second Source and drain metal level.
In the method for production flexible array substrate of the invention, the method and step of the production flexible array substrate is also wrapped
It includes:
S6: the second Source and drain metal level, the second flatness layer, anode and pixel definition are sequentially depositing on first flatness layer
Layer.
In the method for production flexible array substrate of the invention, the gate metal layer, the first Source and drain metal level and the
The material of two Source and drain metal levels is identical, and is the storehouse composite structure of Ti, Al, Ti.
In the method for production flexible array substrate of the invention, the step S1 includes:
S11: flexible substrate is formed on the glass substrate；
S12: barrier layer is formed on the flexible base board；
S13: buffer layer is formed on the barrier layer.
The material of the flexible substrate be PI or PET, the buffer layer by one or both of SiNx or SiO2 heap
Stack combination；
The barrier layer with a thickness ofThe buffer layer with a thickness ofThe thickness of first insulating layer
Degree isThe second insulating layer with a thickness ofThe gate metal layer with a thickness ofDescribed first
The thickness of Source and drain metal level and the second Source and drain metal level is
The invention further relates to a kind of flexible array substrates, including substrat structure layer, are arranged on the substrat structure layer
Active layer, setting the first insulating layer on the active layer, setting gate metal layer on the first insulating layer, setting
The first Source and drain metal level of second insulating layer and setting on the second insulating layer in the gate metal layer, the lining
Bottom structure layer includes viewing area for displaying images and the bent area positioned at the viewing area side for bending, described soft
Property array substrate further include:
Interlayer dielectric layer is arranged in first Source and drain metal level；
First contact hole is located at the bent area, simultaneously through the interlayer dielectric layer, second insulating layer, the first insulating layer
It extends into the substrat structure layer；
First flatness layer is arranged on the interlayer dielectric layer, and fills first contact hole；
Wherein, first flatness layer includes corresponding to the first flat sublayer of the viewing area and corresponding to described first
The flat sublayer of the second of contact hole region, the height of the first flat sublayer are greater than the height of the described second flat sublayer
Degree.
In flexible array substrate of the invention, the thickness of the interlayer dielectric layer betweenBetween.
In flexible array substrate of the invention, the flexible array substrate further includes being arranged on first flatness layer
Second Source and drain metal level,
Second Source and drain metal level, the first Source and drain metal level are identical with the material structure of gate metal layer, be Ti,
The storehouse composite structure of Al, Ti.
In flexible array substrate of the invention, the substrat structure layer includes flexible substrate, is arranged in the flexible liner
Barrier layer on bottom and the buffer layer being arranged on the barrier layer；
The material of the flexible substrate be PI or PET, the buffer layer by one or both of SiNx or SiO2 heap
Stack combination；
The barrier layer with a thickness ofThe buffer layer with a thickness ofThe thickness of first insulating layer
Degree isThe second insulating layer with a thickness ofThe gate metal layer with a thickness ofDescribed
The thickness of one Source and drain metal level and the second Source and drain metal level is
In flexible array substrate of the invention, first contact hole runs through the buffer layer and the barrier layer.
In flexible array substrate of the invention, the flexible array substrate further include one for be connected to the active layer and
Second contact hole of the second Source and drain metal level, second Source and drain metal level are electrically connected at described by second contact hole
Active layer.
The flexible array substrate further includes the second flatness layer being arranged in second Source and drain metal level, is arranged in institute
State the pixel defining layer of anode and setting on the anode on the second flatness layer.
Flexible array substrate compared to the prior art, the method for production flexible array substrate of the invention and corresponding soft
Property array substrate by halftone mask to Other substrate materials carry out image conversion processing so that the first flatness layer correspond to bending
Inclined thinning is realized in the part (the second flat sublayer) in area, reduces the thickness of the second flat sublayer, reduces the second source and drain metal
Layer, when being bent, is conducive to the stability of the second Source and drain metal level at a distance from neutral surface；
In addition, the first Source and drain metal level can not be made to planarize, therefore the first flatness layer is also since interlayer dielectric layer is relatively thin
Achieve the effect that planarize the first Source and drain metal level；
It solves in existing flexible array substrate first flat between the first Source and drain metal level and the second Source and drain metal level
The technical issues of smooth thickness degree is larger, is unfavorable for the stability of bent area bending.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below to required in embodiment
Attached drawing to be used is briefly described.The accompanying drawings in the following description is only section Example of the invention, general for this field
For logical technical staff, without creative efforts, other attached drawings can also be obtained according to these attached drawings.
Fig. 1 is the structural schematic diagram of the flexible array substrate of the prior art；
Fig. 2 is the step flow chart of the embodiment of the method for production flexible array substrate of the invention；
Fig. 3 is the step flow chart of the step S3 of the embodiment of the method for production flexible array substrate of the invention；
Fig. 4 is the step flow chart of the step S5 of the embodiment of the method for production flexible array substrate of the invention；
Fig. 5 is the structural representation after the completion step S2 of the embodiment of the method for production flexible array substrate of the invention
Figure；
Fig. 6 is the structural representation after the completion step S3 of the embodiment of the method for production flexible array substrate of the invention
Figure；
Fig. 7 is the structural representation after the completion step S5 of the embodiment of the method for production flexible array substrate of the invention
Figure；
Fig. 8 is the structural representation after the completion step S6 of the embodiment of the method for production flexible array substrate of the invention
Figure；
Fig. 9 is the structural schematic diagram of the embodiment of flexible array substrate of the invention.
Specific embodiment
The schema in attached drawing is please referred to, wherein identical component symbol represents identical component.The following description is to be based on
Illustrated by the specific embodiment of the invention, be not construed as the limitation present invention other specific embodiments not detailed herein.
Referring to figure 2. and Fig. 7, Fig. 2 be production flexible array substrate of the invention method embodiment step process
Figure；Fig. 7 is the structural schematic diagram after the completion step S5 of the embodiment of the method for production flexible array substrate of the invention.
A kind of method making flexible array substrate of the embodiment of the present invention, wherein flexible array substrate includes substrate knot
Structure layer 11, substrat structure layer 11 include viewing area 1a for displaying images and are used for the curved of bending positioned at the viewing area side 1a
Folding area 1b, the method and step for making flexible array substrate include:
S1: substrat structure layer 11 is formed on the glass substrate；
S2: it is exhausted that active layer 12, the first insulating layer 13, gate metal layer 14, second are sequentially formed on substrat structure layer 11
Edge layer 15 and the first Source and drain metal level 16；
S3: interlayer dielectric layer 17 is formed in the first Source and drain metal level 16, and forms the first contact hole 1c in bent area 1b；
S4: the coating photoresist material on interlayer dielectric layer 17；
S5: patterned process is carried out to the Other substrate materials using halftone mask, it is flat to obtain highly different first
Smooth layer 18, and the first flatness layer 18 fills the first contact hole 1c and the first flatness layer 18 is corresponded to where the first contact hole 1c
The part thinning in region.
S6: the second Source and drain metal level 19, the second flatness layer 101, anode 102 and picture are sequentially depositing on the first flatness layer 18
Plain definition layer 103.
By halftone mask to the first flatness layer 18 in the embodiment of the method for production flexible array substrate of the invention
Image conversion processing is carried out, so that the first flatness layer 18 is partially thin in part (the second flat sublayer 182) realization for corresponding to bent area
Change, reduces the thickness of the second flat sublayer 182, reduce the second Source and drain metal level 19 at a distance from neutral surface, it is curved when carrying out
When folding, be conducive to the stability of the second Source and drain metal level 19；
In addition, the first Source and drain metal level 16 can not be made to planarize, therefore first is flat since interlayer dielectric layer 17 is relatively thin
Layer 18 also achievees the effect that planarize the first Source and drain metal level 16.Wherein the thickness of interlayer dielectric layer 17 betweenBetween, for example interlayer dielectric layer 17 can beWith
Specifically, the first insulating layer 13 with a thickness ofSecond insulating layer 15 with a thickness ofGate metal
Layer 14 with a thickness ofThe thickness of first Source and drain metal level 16 and the second Source and drain metal level 19 is
Gate metal layer 14, the first Source and drain metal level 16 are identical with the material of the second Source and drain metal level 19, and be Ti,
The storehouse composite structure of Al, Ti.Such setting, the difference for meeting alternately cabling material resistance value minimize, and are more advantageous to signal
Transmission.The material of certain gate metal layer 14, the first Source and drain metal level 16 and the second Source and drain metal level 19 is also possible to molybdenum
(Mo), one of titanium (Ti), aluminium (Al), copper (Cu) or a variety of storehouses composition.
In the embodiment of the method for production flexible array substrate of the invention, the first flatness layer 18 includes corresponding to display
The flat sublayer 181 of the first of area 1a and the second flat sublayer 182 corresponding to the first contact hole 1c；
The height of first flat sublayer 181 is greater than the height of the second flat sublayer 182.
Image conversion processing is carried out to the first flatness layer 18 by halftone mask, so that the height of the second flat sublayer 182
Less than the first flat sublayer 181, the second Source and drain metal level 19 is reduced in the distance of neutral surface, and then improves bent area progress
The stability of second Source and drain metal level 19 when bending.
In the embodiment of the method for production flexible array substrate of the invention, referring to figure 3. and Fig. 6, step S3 include:
S31: the interlayer dielectric layer 17 in the first Source and drain metal level 16；
S32: carrying out image conversion processing to interlayer dielectric layer 17, is formed positioned at viewing area 1a for being electrically connected active layer
12 the first aperture 1d and the second aperture positioned at bent area 1b；
S33: in the 1a of viewing area, to the first insulating layer 13, second insulating layer 15 corresponding to the first aperture 1d part into
Row dry etch process makes the first aperture 1d be connected to active layer 12,
In the 1b of bent area, the second aperture is corresponded to the first insulating layer 13, second insulating layer 15 and substrat structure layer 11
Part carry out dry etch process, to form the first contact hole 1c.
Wherein, the material of interlayer dielectric layer 17 is SiNx, primarily serves the secondary effect for mending hydrogen, and interlayer dielectric layer 17
Thinner thickness (betweenBetween), be conducive to electrical improvement；Also because interlayer dielectric layer 17 thickness compared with
It is thin, cause interlayer dielectric layer 17 to fail to complete the first Source and drain metal level 16 of planarization, it is therefore desirable to which the first flatness layer 18 will fail
Continued to planarize by the first Source and drain metal level 16 that interlayer dielectric layer 17 completes planarization, is more advantageous to the second Source and drain metal level 19
Deposition.
In the method for production flexible array substrate of the invention, referring to figure 4. and Fig. 7, halftone mask include corresponding to
The first transmittance section in the first region contact hole 1c, the first region aperture 1d corresponding to viewing area 1a second thoroughly
Light portion and opaque portion corresponding to viewing area other regions 1a, the light transmission of the light transmittance of the first transmittance section less than the second transmittance section
Rate, the light transmittance in opaque portion are 0；
Other substrate materials are positivity Other substrate materials, and step S5 includes:
S51: by by the first transmittance section corresponding to the region of the first contact hole of bent area 1d 1c, by the second transmittance section
Correspond to other regions of viewing area 1a corresponding to the region of the first aperture of viewing area 1a 1d and by opaque portion, and to light
Photoresist material carries out ultraviolet lighting processing；
S52: development treatment is carried out to Other substrate materials, obtains the corresponding to the first contact hole 1c in the first flatness layer 18
Two flat sublayers 182 are used to be connected with corresponding to the first flat sublayer 181 of viewing area 1a and comprising the first aperture 1d
Second contact hole of active layer 12 and the second Source and drain metal level 19.
Wherein, less than the light transmittance of the second transmittance section, the light transmittance of the first transmittance section is greater than the light transmittance of the first transmittance section
0, the first transmittance section and the second transmittance section cause photoresist that the light of different depth degrees occurs since the degree by illumination is different
Solution is reacted, the quantity of illumination that the part (region where the first aperture 1d) on the corresponding Other substrate materials in the second transmittance section is subject to
Greatly, thus occur photolysis depth be also higher than the corresponding bent area 1b in the first transmittance section the first contact hole 1c part
(region where the first flat sublayer 182)；Opaque portion corresponds to region (the first flat 181 institute of sublayer on Other substrate materials
Region) due to being not affected by illumination, and be reaction of decomposing.
When therefore, using developing process, the easily developed liquid in region that photolysis occurs corrodes, to form different height
First flatness layer 18 of degree, finally through overbaking processing procedure, Other substrate materials are fully cured to form stable state.
In the embodiment of the method for production flexible array substrate of the invention, step S1 includes:
S11: flexible substrate 111 is formed on the glass substrate；
S12: barrier layer 112 is formed on flexible substrates；
S13: buffer layer 113 is formed on barrier layer 112.
Wherein, the material of flexible substrate 111 is PI or PET, and buffer layer 113 is by one or both of SiNx's or SiO2
Heap stack combination；Barrier layer 112 with a thickness ofBuffer layer 113 with a thickness of
The invention further relates to a kind of flexible array substrates, including substrat structure layer 11, are arranged on substrat structure layer 11
Active layer 12, the gate metal layer 14 being arranged on the first insulating layer 13, is set the first insulating layer 13 being arranged on active layer 12
It sets in the second insulating layer 15 in gate metal layer 14 and the first Source and drain metal level 16 being arranged in second insulating layer 15, substrate
Structure sheaf 11 includes viewing area 1a for displaying images and the bent area 1b for bending positioned at the viewing area side 1a, flexibility
Array substrate further include:
Interlayer dielectric layer 17 is arranged in the first Source and drain metal level 16；
First contact hole 1c is located at bent area 1b, runs through interlayer dielectric layer 17, second insulating layer 15, the first insulating layer 13
And it extends into substrat structure layer 11；
First flatness layer 18 is arranged on interlayer dielectric layer 17, and fills the first contact hole 1c；
Wherein, the first flatness layer 18 includes corresponding to the first flat sublayer 181 of viewing area 1a and corresponding to the first contact
The flat sublayer 182 of the second of the hole region 1c, the height of the first flat sublayer 181 are greater than the height of the second flat sublayer 182.
Wherein, the flexible array substrate of the present embodiment is made of the method for above-described embodiment.
Image conversion processing is carried out to the first flatness layer 18 by halftone mask in the present embodiment, so that the first flatness layer 18
Inclined thinning is realized in the part (the second flat sublayer 182) for corresponding to the first contact hole region of bent area, reduces the
The thickness of two flat sublayers 182, reduces the second Source and drain metal level at a distance from neutral surface, when being bent, is conducive to
The stability of two Source and drain metal levels；
Image conversion processing is carried out to the first flatness layer 18 by halftone mask, so that the height of the second flat sublayer 182
Less than the first flat sublayer 181, the second Source and drain metal level 19 is reduced in the distance of neutral surface, and then improves bent area progress
The stability of second Source and drain metal level 19 when bending.
In addition, the first Source and drain metal level 16 can not be made to planarize, therefore first is flat since interlayer dielectric layer 17 is relatively thin
Layer 18 also achievees the effect that planarize the first Source and drain metal level 16.Wherein the thickness of interlayer dielectric layer 17 betweenBetween, for example interlayer dielectric layer 17 can beWith
In the embodiment of flexible array substrate of the invention, flexible array substrate further includes being arranged in the first flatness layer 18
On the second Source and drain metal level 19,
Second Source and drain metal level 19, the first Source and drain metal level 16 are identical with the material structure of gate metal layer 14, be Ti,
The storehouse composite structure of Al, Ti.Such setting, the difference for meeting alternately cabling material resistance value minimize, and are more advantageous to signal
Transmission.The material of certain gate metal layer 14, the first Source and drain metal level 16 and the second Source and drain metal level 19 is also possible to molybdenum
(Mo), one of titanium (Ti), aluminium (Al), copper (Cu) or a variety of storehouses composition.
In the embodiment of flexible array substrate of the invention, substrat structure layer 11 includes flexible substrate 111, is arranged soft
Property substrate 111 on barrier layer 112 and the buffer layer 113 that is arranged on barrier layer 112；
The material of flexible substrate 111 be PI or PET, buffer layer 113 by one or both of SiNx or SiO2 storehouse
Combination；
Barrier layer 112 with a thickness ofBuffer layer 113 with a thickness ofFirst insulating layer 13 with a thickness ofSecond insulating layer 15 with a thickness ofGate metal layer 14 with a thickness ofFirst Source and drain metal level
16 and second the thickness of Source and drain metal level 19 be
In the implementation benefit of flexible array substrate of the invention, the first contact hole 1c runs through buffer layer 113 and barrier layer
112。
In flexible array substrate of the invention, flexible array substrate further includes one for being connected to active layer 12 and the second source
The second contact hole of metal layer 19 is leaked, the second Source and drain metal level 19 is electrically connected at active layer 12 by the second contact hole.
Flexible array substrate further includes the second flatness layer 101 being arranged in the second Source and drain metal level 19, is arranged second
Anode 102 on flatness layer 101 and the pixel defining layer 103 being arranged on anode 102.
Flexible array substrate compared to the prior art, the method for production flexible array substrate of the invention and corresponding soft
Property array substrate by halftone mask to Other substrate materials carry out image conversion processing so that the first flatness layer correspond to bending
Inclined thinning is realized in the part (the second flat sublayer) in area, reduces the thickness of the second flat sublayer, reduces the second source and drain metal
Layer, when being bent, is conducive to the stability of the second Source and drain metal level at a distance from neutral surface；
In addition, the first Source and drain metal level can not be made to planarize, therefore the first flatness layer is also since interlayer dielectric layer is relatively thin
Achieve the effect that planarize the first Source and drain metal level；
It solves in existing flexible array substrate first flat between the first Source and drain metal level and the second Source and drain metal level
The technical issues of smooth thickness degree is larger, is unfavorable for the stability of bent area bending.
Although the disclosure, this field skill has shown and described relative to one or more implementations in the present invention
Art personnel will be appreciated that equivalent variations and modification based on the reading and understanding to the specification and drawings.The disclosure include it is all this
The modifications and variations of sample, and be limited only by the scope of the following claims.In addition, although the special characteristic of the disclosure phase
Only one in several implementations is disclosed, but this feature can with such as can be for a given or particular application
It is expectation and one or more other features combinations of other advantageous implementations.Moreover, with regard to term " includes ", " having ",
" containing " or its deformation be used in specific embodiments or claims for, such term be intended to with term "comprising"
Similar mode includes.
In conclusion although the present invention is disclosed above with embodiment, the serial number before embodiment, such as " first ", " second "
Deng only using for convenience of description, the sequence of various embodiments of the present invention is not caused to limit.Also, above-described embodiment not to
Limitation the present invention, those skilled in the art, without departing from the spirit and scope of the present invention, can make it is various change with
Retouching, therefore protection scope of the present invention subjects to the scope of the claims.
Claims (10)
1. a kind of method for making flexible array substrate, the flexible array substrate includes substrat structure layer, the substrat structure
Layer includes viewing area for displaying images and the bent area for bending positioned at the viewing area side, which is characterized in that
It is described production flexible array substrate method and step include:
S1: the substrat structure layer is formed on the glass substrate；
S2: active layer, the first insulating layer, gate metal layer, second insulating layer and are sequentially formed on the substrat structure layer
One Source and drain metal level；
S3: interlayer dielectric layer is formed in first Source and drain metal level, and forms the first contact hole in the bent area；
S4: the coating photoresist material on the interlayer dielectric layer；
S5: carrying out patterned process to the Other substrate materials using halftone mask, obtain the first different flatness layer of height,
First flatness layer fills first contact hole, and first flatness layer is corresponded to where first contact hole
The part thinning in region.
2. the method for production flexible array substrate according to claim 1, which is characterized in that first flatness layer includes
The first flat sublayer corresponding to the viewing area and the second flat sublayer corresponding to first contact hole；
The height of the first flat sublayer is greater than the height of the described second flat sublayer.
3. the method for production flexible array substrate according to claim 1, which is characterized in that the thickness of the interlayer dielectric layer
Degree betweenBetween.
4. the method for production flexible array substrate according to claim 1, which is characterized in that the step S3 includes:
S31: the interlayer dielectric layer in first Source and drain metal level；
S32: carrying out image conversion processing to the interlayer dielectric layer, is formed and is located at described having for being electrically connected for the viewing area
First aperture of active layer and the second aperture positioned at the bent area；
S33: in the viewing area, the portion of first aperture is corresponded to first insulating layer, the second insulating layer
Divide and carry out dry etch process, first aperture is made to be connected to the active layer,
In the bent area, first insulating layer, the second insulating layer and the substrat structure layer are corresponded to described
The part of second aperture carries out dry etch process, to form the first contact hole.
5. the method for production flexible array substrate according to claim 1, which is characterized in that the halftone mask includes
The first transmittance section corresponding to first contact hole region, the first aperture region corresponding to the viewing area
Second transmittance section and opaque portion corresponding to other regions of viewing area, the light transmittance of first transmittance section is less than
The light transmittance of two transmittance sections, the light transmittance in the opaque portion are 0；
The Other substrate materials are positivity Other substrate materials, and the step S5 includes:
S51: by the way that first transmittance section to be corresponded to the region of the first contact hole described in the bent area, by described the
Two transmittance sections correspond to the region of the first aperture described in the viewing area and the opaque portion are corresponded to the display
Other regions in area, and ultraviolet lighting processing is carried out to the Other substrate materials；
S52: carrying out development treatment to the Other substrate materials, obtains the first flatness layer corresponds to first contact hole second
Flat sublayer is used to connect the active layer corresponding to the first flat sublayer of the viewing area and comprising the first aperture
With the second contact hole of the second Source and drain metal level.
6. the method for production flexible array substrate according to claim 1, which is characterized in that the production flexible array base
The method and step of plate further include:
S6: the second Source and drain metal level, the second flatness layer, anode and pixel defining layer are sequentially depositing on first flatness layer.
7. the method for production flexible array substrate according to claim 6, which is characterized in that the gate metal layer, the
One Source and drain metal level is identical with the material of the second Source and drain metal level, and is the storehouse composite structure of Ti, Al, Ti.
8. a kind of flexible array substrate including substrat structure layer, the active layer being arranged on the substrat structure layer, is arranged in institute
It states the first insulating layer on active layer, setting gate metal layer on the first insulating layer, be arranged in the gate metal
The first Source and drain metal level of second insulating layer and setting on the second insulating layer on layer, the substrat structure layer include using
Viewing area in display image and the bent area for bending positioned at the viewing area side, which is characterized in that the flexibility
Array substrate includes:
Interlayer dielectric layer is arranged in first Source and drain metal level；
First contact hole is located at the bent area, through the interlayer dielectric layer, second insulating layer, the first insulating layer and extends
Enter in the substrat structure layer；
First flatness layer is arranged on the interlayer dielectric layer, and fills first contact hole；
Wherein, first flatness layer includes corresponding to the first flat sublayer of the viewing area and corresponding to first contact
The flat sublayer of the second of hole region, the height of the first flat sublayer are greater than the height of the described second flat sublayer.
9. flexible array substrate according to claim 8, which is characterized in that the thickness of the interlayer dielectric layer betweenBetween.
10. flexible array substrate according to claim 8, which is characterized in that the flexible array substrate further includes setting
The second Source and drain metal level on first flatness layer,
Second Source and drain metal level, the first Source and drain metal level are identical with the material structure of gate metal layer, are Ti, Al, Ti
Storehouse composite structure.
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