JPH02196222A - Production of active matrix substrate - Google Patents

Production of active matrix substrate

Info

Publication number
JPH02196222A
JPH02196222A JP1540289A JP1540289A JPH02196222A JP H02196222 A JPH02196222 A JP H02196222A JP 1540289 A JP1540289 A JP 1540289A JP 1540289 A JP1540289 A JP 1540289A JP H02196222 A JPH02196222 A JP H02196222A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
gate electrodes
electrodes
layer
photolithography
deposited thereon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1540289A
Other versions
JP2678044B2 (en )
Inventor
Tetsuya Kawamura
Yutaka Miyata
Hiroshi Tsutsu
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To decrease the number of times of photolithography and to decrease film forming stages so as to reduce costs by executing a photolithography method while using gate electrodes in place of a photomask.
CONSTITUTION: The gate electrodes 7 are formed by desired patterning on a light transparent substrate 6. A 1st insulator layer 9, a 1st semiconductor layer 10 and a passivation layer 11 are deposited thereon. A positive type photoresist 21 is then applied thereon and is irradiated with UV light 22 from the rear surface of the substrate with the gate electrodes 7 as a mask and is developed. The resist exclusive of the gate electrodes 7 is then removed. The layer 11 is etched with this resist 21 as a mask and a 2nd semiconductor layer 12 is deposited thereon and is patterned to a prescribed shape, thereafter, an ITO film is deposited thereon and drain electrodes 15, source electrodes 16, and picture element electrodes 17 are formed. The number of the photolithography is, therefore, decreased in this way.
COPYRIGHT: (C)1990,JPO&Japio
JP1540289A 1989-01-25 1989-01-25 The method for manufacturing an active matrix substrate Expired - Fee Related JP2678044B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1540289A JP2678044B2 (en) 1989-01-25 1989-01-25 The method for manufacturing an active matrix substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1540289A JP2678044B2 (en) 1989-01-25 1989-01-25 The method for manufacturing an active matrix substrate

Publications (2)

Publication Number Publication Date
JPH02196222A true true JPH02196222A (en) 1990-08-02
JP2678044B2 JP2678044B2 (en) 1997-11-17

Family

ID=11887737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1540289A Expired - Fee Related JP2678044B2 (en) 1989-01-25 1989-01-25 The method for manufacturing an active matrix substrate

Country Status (1)

Country Link
JP (1) JP2678044B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04233512A (en) * 1990-12-28 1992-08-21 Sharp Corp Production of active matrix substrate
JPH04247433A (en) * 1991-02-01 1992-09-03 Sharp Corp Production of active matrix substrate
JPH0836192A (en) * 1994-07-21 1996-02-06 Nec Corp Active matrix substrate and its production
US6071374A (en) * 1996-06-26 2000-06-06 Lg Electronics Inc. Apparatus for etching glass substrate
US6197209B1 (en) 1995-10-27 2001-03-06 Lg. Philips Lcd Co., Ltd. Method of fabricating a substrate
US6228211B1 (en) 1998-09-08 2001-05-08 Lg. Philips Lcd Co., Ltd. Apparatus for etching a glass substrate
US6558776B1 (en) 1998-10-22 2003-05-06 Lg.Philips Lcd Co., Ltd. Glass substrate for liquid crystal display device
US6887746B2 (en) 1992-03-25 2005-05-03 Semiconductor Energy Lab Insulated gate field effect transistor and method for forming the same
US6955840B2 (en) 1997-10-20 2005-10-18 Lg. Philips Lcd Co., Ltd. Liquid crystal display device having thin glass substrate on which protective layer formed and method of making the same
US8043466B1 (en) 1997-03-21 2011-10-25 Lg Display Co., Ltd Etching apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171160A (en) * 1986-01-22 1987-07-28 Sharp Corp Thin film transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62171160A (en) * 1986-01-22 1987-07-28 Sharp Corp Thin film transistor

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04233512A (en) * 1990-12-28 1992-08-21 Sharp Corp Production of active matrix substrate
JPH04247433A (en) * 1991-02-01 1992-09-03 Sharp Corp Production of active matrix substrate
US6887746B2 (en) 1992-03-25 2005-05-03 Semiconductor Energy Lab Insulated gate field effect transistor and method for forming the same
JPH0836192A (en) * 1994-07-21 1996-02-06 Nec Corp Active matrix substrate and its production
US6197209B1 (en) 1995-10-27 2001-03-06 Lg. Philips Lcd Co., Ltd. Method of fabricating a substrate
US6071374A (en) * 1996-06-26 2000-06-06 Lg Electronics Inc. Apparatus for etching glass substrate
US8043466B1 (en) 1997-03-21 2011-10-25 Lg Display Co., Ltd Etching apparatus
US6955840B2 (en) 1997-10-20 2005-10-18 Lg. Philips Lcd Co., Ltd. Liquid crystal display device having thin glass substrate on which protective layer formed and method of making the same
US6228211B1 (en) 1998-09-08 2001-05-08 Lg. Philips Lcd Co., Ltd. Apparatus for etching a glass substrate
US6558776B1 (en) 1998-10-22 2003-05-06 Lg.Philips Lcd Co., Ltd. Glass substrate for liquid crystal display device

Also Published As

Publication number Publication date Type
JP2678044B2 (en) 1997-11-17 grant

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees