CN109298583B - An all-optical switch and optical memory based on graphene optical bistable - Google Patents

An all-optical switch and optical memory based on graphene optical bistable Download PDF

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CN109298583B
CN109298583B CN201811486391.7A CN201811486391A CN109298583B CN 109298583 B CN109298583 B CN 109298583B CN 201811486391 A CN201811486391 A CN 201811486391A CN 109298583 B CN109298583 B CN 109298583B
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CN109298583A (en
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赵东
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Dragon Totem Technology Hefei Co ltd
Hefei Minglong Electronic Technology Co ltd
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Hubei University of Science and Technology
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00Optical logic elements; Optical bistable devices
    • G02F3/02Optical bistable devices
    • G02F3/024Optical bistable devices based on non-linear elements, e.g. non-linear Fabry-Perot cavity
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/941Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector

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Abstract

本发明公开了一种基于石墨烯光学双稳态的全光开关及光存储器,首先利用材料的损耗和增益共同作用,精细地调制MgF2和ZnS为基质的掺杂电介质材料的折射率实部和虚部,使其折射率满足宇称‑时间对称性,形成宇称‑时间对称结构的谐振腔;然后把石墨烯嵌入此结构的中心,利用石墨烯的三阶非线性效应,实现低阈值的光学双稳态,双稳态的阈值低至GW/cm2量级;最后利用石墨烯的双稳态效应用制作全光通信系统中的全光开关及光存储器;本发明为现有的全光开关的光存储器提供了一种新的选择,且开关阈值可通过石墨烯的化学势灵活调节。

Figure 201811486391

The invention discloses an all-optical switch and an optical memory based on graphene optical bistable. First, the real part of the refractive index of the doped dielectric material with MgF2 and ZnS as the matrix is finely modulated by using the combined effect of the loss and gain of the material. and the imaginary part, so that the refractive index satisfies the parity-time symmetry, forming a resonant cavity with a parity-time symmetric structure; then the graphene is embedded in the center of the structure, and the third-order nonlinear effect of graphene is used to achieve a low threshold optical bistable, the threshold of bistable is as low as GW/ cm2 ; finally, the all-optical switch and optical memory in the all-optical communication system are fabricated by using the bistable effect of graphene; the present invention is the existing All-optical switching optical memory provides a new option, and the switching threshold can be flexibly adjusted by the chemical potential of graphene.

Figure 201811486391

Description

All-optical switch and optical memory based on graphene optical bistable state
Technical Field
The invention belongs to the technical field of all-optical communication, relates to an all-optical switch and an optical memory applied to an all-optical communication system, and particularly relates to an all-optical switch and an optical memory based on graphene optical bistable state.
Background
With the development of all-optical networks and information detection technologies, the development of all-optical switches, optical memories, and the like is urgently needed. The optical bistable effect of nonlinear materials is applied, and the all-optical switch and the optical memory can be realized.
In the past, electric field locality is generally enhanced through a surface plasmon polariton or Fabry-Perot cavity structure of a material, low-threshold optical bistable state is realized, and loss of the material is reduced as much as possible.
The surface plasmon polariton is a transverse magnetic wave generated in the metal material, and the enhanced electromagnetic field only runs along the surface of the material. And can only excite surface plasmons in special metamaterials and Kretschmann structures.
If a bragg grating is used to form a fabry-perot cavity, the larger the number of periods of the grating, the better the monochromaticity of the defect mode and the stronger the electric field locality, but the transmitted light intensity decreases due to the loss in the material.
Disclosure of Invention
In order to solve the technical problems, the invention provides an all-optical switch and an optical memory based on graphene optical bistable state.
The technical scheme adopted by the invention is as follows: an all-optical switch and an optical memory based on graphene optical bistable state are characterized in that the manufacturing method comprises the following steps:
firstly, the real part and the imaginary part of the refractive index of the doped dielectric material are finely modulated by utilizing the combined action of the loss and the gain of the material, so that the refractive index of the doped dielectric material meets the space-time symmetry, and a resonant cavity with a space-time symmetric structure is formed; then embedding the graphene into the center of the symmetrical structure, and realizing the optical bistable state with low threshold value as low as GW/cm by utilizing the third-order nonlinear effect of the graphene2Magnitude; and finally, manufacturing an all-optical switch and an optical memory in the all-optical communication system by using the bistable effect of the graphene.
The optical bistable can be applied to all-optical switches and optical memories in all-optical communication, and then the threshold value of the optical bistable is the threshold value of the all-optical switch. The threshold of all-optical switches is further reduced by increasing the gain/loss of the dielectric material in the space-time symmetric structure, and the upper and lower threshold spacing is increased.
In addition, electrodes are disposed on the graphene, and the threshold value and the interval between the upper and lower threshold values of the all-optical switch can be flexibly controlled by adjusting the chemical potential of the graphene, that is, the voltage on the electrodes.
Compared with the prior art, the invention has the beneficial effects that: the optical bistable all-optical switch and the optical memory are realized in the novel two-dimensional material graphene, the switch threshold value is reduced and the interval between the upper threshold value and the lower threshold value is increased by utilizing the locality of a PT symmetrical structure to an electric field, and when the gain-loss coefficient is 0.1, the switch threshold value is reduced by 1 magnitude compared with the switch threshold value of a common resonant cavity, and in addition, the all-optical switch threshold value can be flexibly adjusted through the chemical potential of the graphene. The loss of the material is considered to be harmful, and the invention fully utilizes the loss of the material to enhance the electric field locality and the third-order nonlinear effect of the graphene, thereby realizing the low-threshold optical bistable state of the graphene.
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FIG. 1 is a schematic view of an astronomical-time symmetric dielectric multilayer containing graphene according to an embodiment of the present invention;
FIG. 2 is a graph of bistable switching threshold as a function of chemical potential according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a dielectric material fabrication process according to an embodiment of the present invention;
FIG. 4 is a diagram of input-output relationship of light intensity according to an embodiment of the present invention.
Detailed Description
In order to facilitate the understanding and implementation of the present invention for those of ordinary skill in the art, the present invention is further described in detail with reference to the accompanying drawings and examples, it is to be understood that the embodiments described herein are merely illustrative and explanatory of the present invention and are not restrictive thereof.
The imaginary part of the refractive index of a material represents the loss or gain of the material, and the loss surface causes energy attenuation, which is a disadvantage and should be minimized in the device design. The invention finely modulates MgF2And the real and imaginary refractive indices of the doped dielectric material with ZnS as a host, such that the refractive indices satisfy the space-time symmetry (PT symmetry), i.e., n (z) ═ n (-z). Dielectric multilayers that satisfy both space-time symmetry can enhance the locality of the defect mode electric field. The method comprises the steps of embedding graphene into the middle of a defect layer, increasing three-order nonlinearity of the graphene by utilizing electric field locality, so that optical bistable state of a low threshold value is realized, and manufacturing an all-optical switch and an optical memory in an all-optical communication system by utilizing the bistable effect of the graphene.
Fig. 1 is a schematic diagram of a symmetrical structure of PT formed by a dielectric multilayer. The dielectrics A, B, A ', B' are alternately arranged to form two Bragg gratings, one on each side of the defect layer C. Dielectrics A and A' in MgF2As host material, erbium active gain media is doped in a and copper lossy media is present in a'. Dielectrics B and B' are based on ZnS and doped with erbiumThe dielectric is a copper lossy dielectric. An electrode is added to graphene G to control the chemical potential of graphene (the chemical potential of graphene is actually a voltage applied to the electrode of graphene, the voltage on the electrode is changed, the relationship between the switching threshold and the chemical potential is shown in fig. 2, and the gain-loss factor q at this time is 0.02).
The refractive indices of dielectrics A, B, A ', B' and C are na=1.38+iq,nb=2.35–iq,na′=1.38–iq,nb′2.35+ iq and ncQ is called the gain-loss factor, 1.5.
The thicknesses of A, B, A ', B' and C are respectively: 0.28, 0.16, 0.28, 0.16, 0.16 μm. The whole structure is (AB)NCGC(B′A′)NAnd the Bragg period number N is 4.
Referring to fig. 3(a) -3 (i), the manufacturing steps of the dielectric material according to the embodiment of the invention are as follows:
step 1: with MgF2Is a matrix material, in which erbium ions are doped to form an active dielectric A; as shown in fig. 3 (a);
step 2: doping copper ions into ZnS serving as a matrix material to form a loss dielectric B; as shown in FIG. 3 (b);
and step 3: repeating the steps 1 and 2 to form four periodic units with AB dielectrics alternately arranged; as shown in FIG. 3 (c);
and 4, step 4: forming C by taking phenolic resin as a matrix material; as shown in FIG. 3 (d);
and 5: attaching a layer of single-layer graphene G on the left side of the phenolic resin; as shown in fig. 3 (e);
step 6: a layer of phenolic resin C grows on the right side of the graphene; as shown in FIG. 3 (f);
and 7: ZnS is taken as a matrix material, and erbium impurity ions are doped in the ZnS to form an active dielectric medium B'; as shown in FIG. 3 (g);
and 8: with MgF2Is a host material, in which copper ions are doped to form a lossy dielectric A'; as shown in FIG. 3 (h);
and step 9: repeating the steps 7 and 8 to form four periodic units with the B 'A' dielectrics arranged alternately; as shown in fig. 3 (i).
With respect to fig. 4, light is incident from the left, and when the light intensity is weak, the input-output relationship of the light intensity satisfies curve 1, increasing the incident light intensity, the output light intensity also increases. When the input light intensity increases to IUWhen the light intensity of the output jumps upwards, B → C, the relation of the input and output light intensities satisfies the curve 2.
When the light intensity is strong, the input-output relationship of the light intensity satisfies the curve 2, the incident light intensity is weakened, and the output light intensity is also weakened. When the input light intensity is reduced to ILWhen the light intensity of the output jumps downwards, D → A, the relation of the input and output light intensity satisfies the curve 1.
Handle IUUpper threshold of so-called optical bistability, ILCalled the lower threshold of the optical bistable state, and the difference between the two parameters called the threshold interval. The optical switch is realized by using an optical bistable effect, the lower the upper and lower threshold values of the bistable state are expected to be, the better the lower the threshold value is, the lower the light intensity requirement of an incident light source is, and meanwhile, the larger the interval between the upper and lower threshold values is, the better the interval between the on and off of the optical switch is, and the better the switch discrimination is.
It should be understood that the invention is not limited to the details of the description, which are set forth in the following description, but may be embodied in various other forms without departing from the spirit or scope of the invention as defined by the appended claims.

Claims (8)

1.一种基于石墨烯光学双稳态的全光开关,其特征在于,制作方法为:1. an all-optical switch based on graphene optical bistable, is characterized in that, making method is: 首先利用材料的损耗和增益共同作用,精细地调制掺杂电介质材料的折射率实部和虚部,使其折射率满足宇称-时间对称性,形成宇称-时间对称结构的谐振腔;然后把石墨烯嵌入此对称结构的中心,利用石墨烯的三阶非线性效应,实现低阈值的光学双稳态,双稳态的阈值低至GW/cm2量级;最后利用石墨烯的双稳态效应制作全光通信系统中的全光开关及光存储器;First, the real and imaginary parts of the refractive index of the doped dielectric material are finely modulated by the combined effect of the loss and gain of the material, so that the refractive index satisfies the parity-time symmetry, and a resonant cavity with a parity-time symmetric structure is formed; then Graphene is embedded in the center of this symmetrical structure, and the third-order nonlinear effect of graphene is used to realize low-threshold optical bistable, and the threshold of bistable is as low as GW/ cm2 ; finally, the bistable of graphene is used. State effect to fabricate all-optical switches and optical memories in all-optical communication systems; 所述宇称-时间对称结构的谐振腔由电介质多层构成,其中电介质A、B、A′、和B′交替排列,形成两个布拉格光栅,分别位于缺陷层C的两边;整个结构为(AB)NCGC(B′A′)N,N为布拉格周期数,G为单层石墨烯。The resonant cavity of the parity-time symmetric structure is composed of multiple layers of dielectrics, wherein the dielectrics A, B, A', and B' are alternately arranged to form two Bragg gratings, which are respectively located on both sides of the defect layer C; the entire structure is ( AB) N CGC(B'A') N , where N is the Bragg period number, and G is single-layer graphene. 2.根据权利要求1所述的基于石墨烯光学双稳态的全光开关,其特征在于:所述电介质A和A′以MgF2为基质材料,在A中掺杂铒活性增益介质,在A′中存在铜损耗介质。2. The all-optical switch based on graphene optical bistable according to claim 1, characterized in that: the dielectrics A and A ' take MgF as the host material, and A is doped with an erbium active gain medium, and A copper lossy medium is present in A'. 3.根据权利要求1所述的基于石墨烯光学双稳态的全光开关,其特征在于:所述电介质B和B′以ZnS为基质材料,在B′中掺杂铒活性增益介质,在B中存在铜损耗介质。3. The all-optical switch based on graphene optical bistable according to claim 1, characterized in that: the dielectrics B and B' use ZnS as the host material, B' is doped with erbium active gain medium, Copper lossy medium is present in B. 4.根据权利要求1所述的基于石墨烯光学双稳态的全光开关,其特征在于:所述电介质A、B、A′、B′和C的折射率分别为na=1.38+iq,nb=2.35–iq,na′=1.38–iq,nb′=2.35+iq和nc=1.5,q为增益-损耗因子。4. The all-optical switch based on graphene optical bistable according to claim 1, characterized in that: the refractive indices of the dielectrics A, B, A', B' and C are respectively na = 1.38+iq , n b =2.35−iq, na =1.38−iq, n b′ =2.35+iq and n c =1.5, q is the gain-loss factor. 5.根据权利要求1所述的基于石墨烯光学双稳态的全光开关,其特征在于:所述电介质A、B、A′、B′和C的厚度分别为:0.28μm、0.16μm、0.28μm、0.16μm、0.16μm,布拉格周期数N=4。5 . The all-optical switch based on graphene optical bistable according to claim 1 , wherein the thicknesses of the dielectrics A, B, A′, B′ and C are: 0.28 μm, 0.16 μm, 0.28 μm, 0.16 μm, 0.16 μm, Bragg period number N=4. 6.根据权利要求1所述的基于石墨烯光学双稳态的全光开关,其特征在于,所述掺杂电介质材料制作过程为:6. the all-optical switch based on graphene optical bistable according to claim 1, is characterized in that, described doped dielectric material fabrication process is: 步骤1:以MgF2为基质材料,在其中掺杂铒离子,形成活性电介质A;Step 1: take MgF 2 as the host material, and dope it with erbium ions to form an active dielectric A; 步骤2:以ZnS为基质材料,在其中掺杂铜离子,形成损耗电介质B;Step 2: using ZnS as the host material, doping it with copper ions to form a lossy dielectric B; 步骤3:重复1和2步骤,依次形成四个AB电介质交替排列的周期单元;Step 3: Repeat steps 1 and 2 to form four periodic units with alternating AB dielectrics; 步骤4:以酚醛树脂为基质材料形成C;Step 4: forming C with phenolic resin as the matrix material; 步骤5:在酚醛树脂左侧附着一层单层石墨烯G;Step 5: Attach a layer of single-layer graphene G on the left side of the phenolic resin; 步骤6:在石墨烯右边再生长一层酚醛树脂形成 C;Step 6: Grow another layer of phenolic resin on the right side of the graphene to form C; 步骤7:以ZnS为基质材料,在其中掺杂铒 离子,形成活性电介质B′;Step 7: using ZnS as the host material, doping it with erbium ions to form an active dielectric B'; 步骤8:以MgF2为基质材料,在其中掺杂铜离子,形成损耗电介质A′;Step 8: take MgF 2 as the host material, and dope it with copper ions to form a lossy dielectric A'; 步骤9:重复7和8步骤,依次形成四个B′A′电介质交替排列的周期单元。Step 9: Repeat steps 7 and 8 to sequentially form four periodic units with alternately arranged B'A' dielectrics. 7.根据权利要求1-6任意一项所述的基于石墨烯光学双稳态的全光开关,其特征在于:通过增大宇称-时间对称结构中掺杂电介质材料的增益/损耗,进一步降低基于光学双稳态的全光开关的阈值,以及增大上、下阈值间隔。7. The all-optical switch based on graphene optical bistable according to any one of claims 1-6, characterized in that: by increasing the gain/loss of the doped dielectric material in the parity-time symmetric structure, further reducing Threshold of all-optical switch based on optical bistable, and increasing upper and lower threshold interval. 8.根据权利要求1-6任意一项所述的基于石墨烯光学双稳态的全光开关,其特征在于:所述石墨烯上配置有电极,通过调整石墨烯的化学势,即电极上电压,灵活地控制基于光学双稳态的全光开关的阈值和上、下阈值间隔。8. The all-optical switch based on graphene optical bistable according to any one of claims 1-6, characterized in that: the graphene is configured with an electrode, and by adjusting the chemical potential of the graphene, that is, on the electrode voltage, flexibly control the threshold and upper and lower threshold interval of the optical bistable-based all-optical switch.
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