CN109298583B - An all-optical switch and optical memory based on graphene optical bistable - Google Patents
An all-optical switch and optical memory based on graphene optical bistable Download PDFInfo
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- CN109298583B CN109298583B CN201811486391.7A CN201811486391A CN109298583B CN 109298583 B CN109298583 B CN 109298583B CN 201811486391 A CN201811486391 A CN 201811486391A CN 109298583 B CN109298583 B CN 109298583B
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- bistable
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- 230000003287 optical effect Effects 0.000 title claims abstract description 47
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 45
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 45
- 230000015654 memory Effects 0.000 title claims abstract description 16
- 239000003989 dielectric material Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000000126 substance Substances 0.000 claims abstract description 8
- 238000004891 communication Methods 0.000 claims abstract description 7
- 230000000694 effects Effects 0.000 claims abstract description 6
- 239000011159 matrix material Substances 0.000 claims abstract description 6
- 230000009022 nonlinear effect Effects 0.000 claims abstract description 4
- 230000002301 combined effect Effects 0.000 claims abstract 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 7
- 239000010410 layer Substances 0.000 claims description 7
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000005011 phenolic resin Substances 0.000 claims description 6
- 229920001568 phenolic resin Polymers 0.000 claims description 6
- 230000007547 defect Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910001431 copper ion Inorganic materials 0.000 claims description 4
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- -1 erbium ions Chemical class 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/024—Optical bistable devices based on non-linear elements, e.g. non-linear Fabry-Perot cavity
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
本发明公开了一种基于石墨烯光学双稳态的全光开关及光存储器,首先利用材料的损耗和增益共同作用,精细地调制MgF2和ZnS为基质的掺杂电介质材料的折射率实部和虚部,使其折射率满足宇称‑时间对称性,形成宇称‑时间对称结构的谐振腔;然后把石墨烯嵌入此结构的中心,利用石墨烯的三阶非线性效应,实现低阈值的光学双稳态,双稳态的阈值低至GW/cm2量级;最后利用石墨烯的双稳态效应用制作全光通信系统中的全光开关及光存储器;本发明为现有的全光开关的光存储器提供了一种新的选择,且开关阈值可通过石墨烯的化学势灵活调节。
The invention discloses an all-optical switch and an optical memory based on graphene optical bistable. First, the real part of the refractive index of the doped dielectric material with MgF2 and ZnS as the matrix is finely modulated by using the combined effect of the loss and gain of the material. and the imaginary part, so that the refractive index satisfies the parity-time symmetry, forming a resonant cavity with a parity-time symmetric structure; then the graphene is embedded in the center of the structure, and the third-order nonlinear effect of graphene is used to achieve a low threshold optical bistable, the threshold of bistable is as low as GW/ cm2 ; finally, the all-optical switch and optical memory in the all-optical communication system are fabricated by using the bistable effect of graphene; the present invention is the existing All-optical switching optical memory provides a new option, and the switching threshold can be flexibly adjusted by the chemical potential of graphene.
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CN109298583B true CN109298583B (en) | 2021-07-20 |
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CN110133388B (en) * | 2019-05-08 | 2024-04-05 | 常州工业职业技术学院 | Electric field sensor with unidirectional reflection PT symmetrical structure |
CN110737047B (en) * | 2019-10-30 | 2020-12-04 | 北京交通大学 | A read-write controllable silicon-based integrated optical buffer |
CN110808530B (en) * | 2019-11-14 | 2020-10-23 | 中国科学院半导体研究所 | quasi-PT symmetrical double-ridge semiconductor laser and application thereof |
CN110927843B (en) * | 2019-12-23 | 2021-11-26 | 中国人民解放军国防科技大学 | Adjustable perfect wave absorber based on graphene photonic crystal structure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103792755A (en) * | 2014-02-12 | 2014-05-14 | 浙江大学城市学院 | Designing method of chirp structure low-threshold bistable all-optical switch |
CN106444214A (en) * | 2016-10-19 | 2017-02-22 | 湖北第二师范学院 | Cosine Function Photonic Crystal Low Threshold Optical Bistable Device Containing Kerr Defects |
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2018
- 2018-12-06 CN CN201811486391.7A patent/CN109298583B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103792755A (en) * | 2014-02-12 | 2014-05-14 | 浙江大学城市学院 | Designing method of chirp structure low-threshold bistable all-optical switch |
CN106444214A (en) * | 2016-10-19 | 2017-02-22 | 湖北第二师范学院 | Cosine Function Photonic Crystal Low Threshold Optical Bistable Device Containing Kerr Defects |
Non-Patent Citations (4)
Title |
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Large lateral shift in complex dielectric multilayers with nearly parity–time symmetry;Dong Zhao et al;《Optical and Quantum Electronics》;20180813;第1-3章 * |
Optical bistability in defective photonic multilayers doped by graphene;Dong Zhao;《Opt Quant Electron》;20170327;全文 * |
Tunable Optical Bistability in One-Dimensional Photonic Crystal with a Nonlinear Defect Coupled by Graphene Sheets;Zhiwei Zheng et al;《Advances in Condensed Matter Physics》;20171101;第1-3章 * |
Ultrastrong Graphene Absorption Induced by One-Dimensional Parity-Time Symmetric Photonic Crystal;Peichao Cao et al;《IEEE Photonics Journal》;20170117;全文 * |
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Effective date of registration: 20230809 Address after: 230000 B-1015, wo Yuan Garden, 81 Ganquan Road, Shushan District, Hefei, Anhui. Patentee after: HEFEI MINGLONG ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 230000 floor 1, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee before: Dragon totem Technology (Hefei) Co.,Ltd. Effective date of registration: 20230809 Address after: 230000 floor 1, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee after: Dragon totem Technology (Hefei) Co.,Ltd. Address before: No. 88 Xianning Avenue, Xianning, Hubei Province, Hubei Patentee before: HUBEI University OF SCIENCE AND TECHNOLOGY |