CN109298583B - All-optical switch and optical memory based on graphene optical bistable state - Google Patents

All-optical switch and optical memory based on graphene optical bistable state Download PDF

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CN109298583B
CN109298583B CN201811486391.7A CN201811486391A CN109298583B CN 109298583 B CN109298583 B CN 109298583B CN 201811486391 A CN201811486391 A CN 201811486391A CN 109298583 B CN109298583 B CN 109298583B
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graphene
optical
bistable
optical switch
dielectric
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CN109298583A (en
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赵东
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Dragon Totem Technology Hefei Co ltd
Hefei Minglong Electronic Technology Co ltd
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Hubei University of Science and Technology
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/024—Optical bistable devices based on non-linear elements, e.g. non-linear Fabry-Perot cavity
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses an all-optical switch and an optical memory based on graphene optical bistable state, which firstly utilize the combined action of loss and gain of materials to finely modulate MgF2And ZnS is used as a real part and an imaginary part of the refractive index of the doped dielectric material of the substrate, so that the refractive index of the doped dielectric material meets the space-time symmetry, and a resonant cavity with a space-time symmetric structure is formed; then embedding graphene into the center of the structure, and realizing optical bistable state with low threshold value as low as GW/cm by utilizing the third-order nonlinear effect of the graphene2Magnitude; finally, an all-optical switch and an optical memory in the all-optical communication system are manufactured by using the bistable effect application of the graphene; the invention provides a new choice for the optical memory of the existing all-optical switch, and the switch threshold value can be flexibly adjusted through the chemical potential of graphene.

Description

All-optical switch and optical memory based on graphene optical bistable state
Technical Field
The invention belongs to the technical field of all-optical communication, relates to an all-optical switch and an optical memory applied to an all-optical communication system, and particularly relates to an all-optical switch and an optical memory based on graphene optical bistable state.
Background
With the development of all-optical networks and information detection technologies, the development of all-optical switches, optical memories, and the like is urgently needed. The optical bistable effect of nonlinear materials is applied, and the all-optical switch and the optical memory can be realized.
In the past, electric field locality is generally enhanced through a surface plasmon polariton or Fabry-Perot cavity structure of a material, low-threshold optical bistable state is realized, and loss of the material is reduced as much as possible.
The surface plasmon polariton is a transverse magnetic wave generated in the metal material, and the enhanced electromagnetic field only runs along the surface of the material. And can only excite surface plasmons in special metamaterials and Kretschmann structures.
If a bragg grating is used to form a fabry-perot cavity, the larger the number of periods of the grating, the better the monochromaticity of the defect mode and the stronger the electric field locality, but the transmitted light intensity decreases due to the loss in the material.
Disclosure of Invention
In order to solve the technical problems, the invention provides an all-optical switch and an optical memory based on graphene optical bistable state.
The technical scheme adopted by the invention is as follows: an all-optical switch and an optical memory based on graphene optical bistable state are characterized in that the manufacturing method comprises the following steps:
firstly, the real part and the imaginary part of the refractive index of the doped dielectric material are finely modulated by utilizing the combined action of the loss and the gain of the material, so that the refractive index of the doped dielectric material meets the space-time symmetry, and a resonant cavity with a space-time symmetric structure is formed; then embedding the graphene into the center of the symmetrical structure, and realizing the optical bistable state with low threshold value as low as GW/cm by utilizing the third-order nonlinear effect of the graphene2Magnitude; and finally, manufacturing an all-optical switch and an optical memory in the all-optical communication system by using the bistable effect of the graphene.
The optical bistable can be applied to all-optical switches and optical memories in all-optical communication, and then the threshold value of the optical bistable is the threshold value of the all-optical switch. The threshold of all-optical switches is further reduced by increasing the gain/loss of the dielectric material in the space-time symmetric structure, and the upper and lower threshold spacing is increased.
In addition, electrodes are disposed on the graphene, and the threshold value and the interval between the upper and lower threshold values of the all-optical switch can be flexibly controlled by adjusting the chemical potential of the graphene, that is, the voltage on the electrodes.
Compared with the prior art, the invention has the beneficial effects that: the optical bistable all-optical switch and the optical memory are realized in the novel two-dimensional material graphene, the switch threshold value is reduced and the interval between the upper threshold value and the lower threshold value is increased by utilizing the locality of a PT symmetrical structure to an electric field, and when the gain-loss coefficient is 0.1, the switch threshold value is reduced by 1 magnitude compared with the switch threshold value of a common resonant cavity, and in addition, the all-optical switch threshold value can be flexibly adjusted through the chemical potential of the graphene. The loss of the material is considered to be harmful, and the invention fully utilizes the loss of the material to enhance the electric field locality and the third-order nonlinear effect of the graphene, thereby realizing the low-threshold optical bistable state of the graphene.
Drawings
FIG. 1 is a schematic view of an astronomical-time symmetric dielectric multilayer containing graphene according to an embodiment of the present invention;
FIG. 2 is a graph of bistable switching threshold as a function of chemical potential according to an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating a dielectric material fabrication process according to an embodiment of the present invention;
FIG. 4 is a diagram of input-output relationship of light intensity according to an embodiment of the present invention.
Detailed Description
In order to facilitate the understanding and implementation of the present invention for those of ordinary skill in the art, the present invention is further described in detail with reference to the accompanying drawings and examples, it is to be understood that the embodiments described herein are merely illustrative and explanatory of the present invention and are not restrictive thereof.
The imaginary part of the refractive index of a material represents the loss or gain of the material, and the loss surface causes energy attenuation, which is a disadvantage and should be minimized in the device design. The invention finely modulates MgF2And the real and imaginary refractive indices of the doped dielectric material with ZnS as a host, such that the refractive indices satisfy the space-time symmetry (PT symmetry), i.e., n (z) ═ n (-z). Dielectric multilayers that satisfy both space-time symmetry can enhance the locality of the defect mode electric field. The method comprises the steps of embedding graphene into the middle of a defect layer, increasing three-order nonlinearity of the graphene by utilizing electric field locality, so that optical bistable state of a low threshold value is realized, and manufacturing an all-optical switch and an optical memory in an all-optical communication system by utilizing the bistable effect of the graphene.
Fig. 1 is a schematic diagram of a symmetrical structure of PT formed by a dielectric multilayer. The dielectrics A, B, A ', B' are alternately arranged to form two Bragg gratings, one on each side of the defect layer C. Dielectrics A and A' in MgF2As host material, erbium active gain media is doped in a and copper lossy media is present in a'. Dielectrics B and B' are based on ZnS and doped with erbiumThe dielectric is a copper lossy dielectric. An electrode is added to graphene G to control the chemical potential of graphene (the chemical potential of graphene is actually a voltage applied to the electrode of graphene, the voltage on the electrode is changed, the relationship between the switching threshold and the chemical potential is shown in fig. 2, and the gain-loss factor q at this time is 0.02).
The refractive indices of dielectrics A, B, A ', B' and C are na＝1.38+iq，nb＝2.35–iq，na′＝1.38–iq，nb′2.35+ iq and ncQ is called the gain-loss factor, 1.5.
The thicknesses of A, B, A ', B' and C are respectively: 0.28, 0.16, 0.28, 0.16, 0.16 μm. The whole structure is (AB)NCGC(B′A′)NAnd the Bragg period number N is 4.
Referring to fig. 3(a) -3 (i), the manufacturing steps of the dielectric material according to the embodiment of the invention are as follows:
step 1: with MgF2Is a matrix material, in which erbium ions are doped to form an active dielectric A; as shown in fig. 3 (a);
step 2: doping copper ions into ZnS serving as a matrix material to form a loss dielectric B; as shown in FIG. 3 (b);
and step 3: repeating the steps 1 and 2 to form four periodic units with AB dielectrics alternately arranged; as shown in FIG. 3 (c);
and 4, step 4: forming C by taking phenolic resin as a matrix material; as shown in FIG. 3 (d);
and 5: attaching a layer of single-layer graphene G on the left side of the phenolic resin; as shown in fig. 3 (e);
step 6: a layer of phenolic resin C grows on the right side of the graphene; as shown in FIG. 3 (f);
and 7: ZnS is taken as a matrix material, and erbium impurity ions are doped in the ZnS to form an active dielectric medium B'; as shown in FIG. 3 (g);
and 8: with MgF2Is a host material, in which copper ions are doped to form a lossy dielectric A'; as shown in FIG. 3 (h);
and step 9: repeating the steps 7 and 8 to form four periodic units with the B 'A' dielectrics arranged alternately; as shown in fig. 3 (i).
With respect to fig. 4, light is incident from the left, and when the light intensity is weak, the input-output relationship of the light intensity satisfies curve 1, increasing the incident light intensity, the output light intensity also increases. When the input light intensity increases to IUWhen the light intensity of the output jumps upwards, B → C, the relation of the input and output light intensities satisfies the curve 2.
When the light intensity is strong, the input-output relationship of the light intensity satisfies the curve 2, the incident light intensity is weakened, and the output light intensity is also weakened. When the input light intensity is reduced to ILWhen the light intensity of the output jumps downwards, D → A, the relation of the input and output light intensity satisfies the curve 1.
Handle IUUpper threshold of so-called optical bistability, ILCalled the lower threshold of the optical bistable state, and the difference between the two parameters called the threshold interval. The optical switch is realized by using an optical bistable effect, the lower the upper and lower threshold values of the bistable state are expected to be, the better the lower the threshold value is, the lower the light intensity requirement of an incident light source is, and meanwhile, the larger the interval between the upper and lower threshold values is, the better the interval between the on and off of the optical switch is, and the better the switch discrimination is.
It should be understood that the invention is not limited to the details of the description, which are set forth in the following description, but may be embodied in various other forms without departing from the spirit or scope of the invention as defined by the appended claims.

Claims (8)

1. The all-optical switch based on the graphene optical bistable state is characterized in that the manufacturing method comprises the following steps:
firstly, the real part and the imaginary part of the refractive index of a doped dielectric material are finely modulated by utilizing the combined action of the loss and the gain of the material, so that the refractive index of the doped dielectric material meets the space-time symmetry, and a resonant cavity with a space-time symmetric structure is formed; then embedding the graphene into the center of the symmetrical structure, and realizing the optical bistable state with low threshold value as low as GW/cm by utilizing the third-order nonlinear effect of the graphene2Magnitude; finally, the bistable effect of the graphene is utilized to manufacture the all-opticalAll-optical switches and optical memories in communication systems;
the resonant cavity with the space-time symmetric structure is formed by a dielectric multilayer, wherein the dielectrics A, B, A 'and B' are alternately arranged to form two Bragg gratings which are respectively positioned at two sides of the defect layer C; the whole structure is (AB)NCGC(B′A′)NN is the bragg period number, G is single layer graphene.
2. The graphene-based optically bistable all-optical switch of claim 1, wherein: the dielectrics A and A' are MgF2As host material, erbium active gain media is doped in a and copper lossy media is present in a'.
3. The graphene-based optically bistable all-optical switch of claim 1, wherein: the dielectrics B and B 'take ZnS as a matrix material, erbium active gain media are doped in the dielectric B', and copper loss media exist in the dielectric B.
4. The graphene-based optically bistable all-optical switch of claim 1, wherein: the refractive indices of the dielectrics A, B, A ', B' and C are na＝1.38+iq，nb＝2.35–iq，na′＝1.38–iq，nb′2.35+ iq and ncQ is the gain-loss factor, 1.5.
5. The graphene-based optically bistable all-optical switch of claim 1, wherein: the thicknesses of the dielectrics A, B, A ', B', and C are: 0.28 μm, 0.16 μm, and 4 bragg cycles.
6. The graphene-based optical bistable all-optical switch according to claim 1, wherein the doped dielectric material is prepared by the following steps:
step 1: with MgF2Is a matrix material doped with erbium ion to form activeA dielectric A;
step 2: doping copper ions into ZnS serving as a matrix material to form a loss dielectric B;
and step 3: repeating the steps 1 and 2 to sequentially form four periodic units with AB dielectrics alternately arranged;
and 4, step 4: forming C by taking phenolic resin as a matrix material;
and 5: attaching a layer of single-layer graphene G on the left side of the phenolic resin;
step 6: growing a layer of phenolic resin on the right side of the graphene to form C;
and 7: doping erbium ions into ZnS serving as a matrix material to form an active dielectric B';
and 8: with MgF2Is a host material, in which copper ions are doped to form a lossy dielectric A';
and step 9: and repeating the steps 7 and 8 to sequentially form four periodic units with the B 'A' dielectrics arranged alternately.
7. The graphene-based optically bistable all-optical switch according to any one of claims 1-6, wherein: the threshold of an optical bistable-based all-optical switch is further reduced by increasing the gain/loss of the doped dielectric material in the space-time symmetric structure, and the upper and lower threshold separation is increased.
8. The graphene-based optically bistable all-optical switch according to any one of claims 1-6, wherein: the graphene is provided with electrodes, and the threshold value and the interval between the upper threshold value and the lower threshold value of the optical bistable all-optical switch are flexibly controlled by adjusting the chemical potential of the graphene, namely the voltage on the electrodes.
CN201811486391.7A 2018-12-06 2018-12-06 All-optical switch and optical memory based on graphene optical bistable state Active CN109298583B (en)

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CN110133388B (en) * 2019-05-08 2024-04-05 常州工业职业技术学院 Electric field sensor with unidirectional reflection PT symmetrical structure
CN110737047B (en) * 2019-10-30 2020-12-04 北京交通大学 Read-write controllable silicon-based integrated optical buffer
CN110808530B (en) * 2019-11-14 2020-10-23 中国科学院半导体研究所 quasi-PT symmetrical double-ridge semiconductor laser and application thereof
CN110927843B (en) * 2019-12-23 2021-11-26 中国人民解放军国防科技大学 Adjustable perfect wave absorber based on graphene photonic crystal structure

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