CN106444214A - Kerr defect-containing cosine function type photonic crystal low-threshold optical bistable device - Google Patents
Kerr defect-containing cosine function type photonic crystal low-threshold optical bistable device Download PDFInfo
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- CN106444214A CN106444214A CN201610910208.6A CN201610910208A CN106444214A CN 106444214 A CN106444214 A CN 106444214A CN 201610910208 A CN201610910208 A CN 201610910208A CN 106444214 A CN106444214 A CN 106444214A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
- G02F3/02—Optical bistable devices
- G02F3/024—Optical bistable devices based on non-linear elements, e.g. non-linear Fabry-Perot cavity
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Abstract
The invention discloses a Kerr defect-containing cosine function type photonic crystal low-threshold optical bistable device. Low-threshold optical bistability is realized by mutually coupling two semifinite photonic crystals (BA)m and (AB)m composed of two cosine function refractive index medium layers (A and B) alternatively and a center layer D made of a Kerr nonlinear defect material. Compared with the conventional photonic crystal optical bistable device, the photonic crystal low-threshold optical bistable device disclosed by the invention has the characteristics of low threshold and subminiature, can be applied to optical switches, optical storage and other occasions of optical communication and integrated optical circuits. The center layer D is a Kerr defect symmetrical cosine function type photonic crystal low-threshold optical bistable device and is capable of realizing coupled integration of other integrated optical circuit devices.
Description
Technical field
The present invention relates to the all-optical switch in quantum calculation and quantum communication, all-optical storage, full optical transistor and full light to patrol
Collect the technical fields such as circuit, specifically for one defect containing Kerr cosine function type photonic crystal Low threshold optical bistable device.
Background technology
Since Yablonovitch and John in 1987 proposes the concept of photonic crystal, photonic crystal has become photoelectricity
One important research field of sub-material.Photonic crystal is the periodic dielectric structures prepared according to symmetry of crystals, its electricity
Magnetic pattern has band structure as the electronic state in crystal.The energy band of photonic crystal is by the symmetry of photonic crystal, component
The size of the dielectric function of material and primitive unit cell determines.The size of dielectric function or change primitive unit cell by changing material, can adjust
The position of photonic band gap processed and width.Particularly under one-dimensional case, the band gap of photonic crystal is readily changed by being situated between
Electric constant or geometry or doping are modulated.Generally, dielectric constant or the refractive index of photon crystal material are formed
For constant, the position of its band gap and the width of band gap are fixing；If adding nonlinear dielectric layer wherein, reform into as supporting by the arm
Miscellaneous non-linear photon crystal, can realize optical bistability.In general photonic crystal, normal optical bistable state utilizes belt edge
Dynamic mobile realizes, and mixes up photonic crystal and be by mean of the dynamic mobile of Defect Modes and realize dispersed light bistable.Correlative study
Showing, 1-D photon crystal may be used for controlling the system of optical bistability, i.e. only need to be close to the other increasing of non-linear photon crystal
Add additional coatings such as phase matching layer, negative index layer or sub-wavelength layer, it is possible to control optical bistability.Therefore, mix up one-dimensional
Photonic crystal is considered as the system that can make compact optical device.
Have document to propose the concept of a kind of novel function photonic crystal, the dielectric layer refractive index of this photonic crystal be with
The periodic function of spatial position change, light wave is propagated along curved path wherein.Research discovery, in order to obtain this kind of photonic crystal
More broad-band gap can be realized by adding suitable defect layer；And the impact that the dispersion of defect is on this kind of photonic crystal photon band gap
It is also to be worth further investigation.
We utilize transfer matrix method and use Lorenz oscillator model to dispersion defect layer recently, have studied one-dimensional containing look
Dissipating Sinc function type photonic crystal forbidden photon band and the dispersion Defect Modes of defect, discovery can obtain broad photon after adding defect
Forbidden band, tunnelling Defect Modes frequency band is narrow and neighbouring field distribution height local.If it is brilliant that NONLINEAR DEFECT is introduced function type photon
In body, it is anticipated that while obtaining extremely broad forbidden photon band, realize optical bistability by the corresponding parameter of regulation, this
The Defect Modes frequency band being because in forbidden band is narrow, and the mode of electromagnetic wave density of states at Defect Modes frequency is very big, by highly beneficial
Generation in nonlinear effect.
Content of the invention
In view of this, present invention is primarily targeted at provide a kind of be suitable for integreted phontonics, brilliant by function type photon
The cosine function type photonic crystal Low threshold optical bistable device that body and non-linear microcavity are combined into.
For reaching above-mentioned purpose, the invention provides a kind of cosine function type photonic crystal Low threshold light of defect containing Kerr double
Steady device, this contains Kerr defect function type photonic crystal is to be made up of central core, the left and right sides Kerr NONLINEAR DEFECT layer D by remaining
String function index dielectric layer A, B replace two and half limited photonic crystals (BA) of compositionm(AB)mSymmetric periodic structure
(BA)mD(AB)m, wherein m is periodicity.
In said structure, the relational expression that A, medium B layer refractive index are changed by cosine function with locus isThe thickness of dielectric layer A and B
It is respectively dA=a, dB=b, both meetsWherein λ0And ω0It is incident light respectively
The centre wavelength of ripple and center circle frequency.
Said structure, the index of refraction relationship formula of center NONLINEAR DEFECT layer D isWhereinFor linear refractive index, unrelated with light intensity；χ(3)For its three rank electric susceptibility；Microcavity length dDMeet
In said structure, each parameter value is n respectivelyA(0)=3.37, nB(0)=1.544, A1=0.2, A2=0.1, a=
221.388nm, b=483.211nm, the thickness of dielectric layer A is dA=221.388nm, the thickness of dielectric layer B is dB=
483.211nm；The linear refractive index of defect layer DThree rank electric susceptibilities χ(3)=2.5 × 10-12m2·V-2, its thickness
It is dD=373.039nm.
In such scheme, light wave incidence angle θ=π/12, incidence wave center circle frequency is
Beneficial effects of the present invention：
1. the central core that the present invention provides is the symmetrical cosine function type photonic crystal Low threshold optical bistability of Kerr defect, profit
With the two and half limited photonic crystals (BA) being alternately made up of two cosine functions index dielectric layer A, Bm(AB)mWith by
The central core D that Kerr NONLINEAR DEFECT material is constituted intercouples and realizes Low threshold optical bistability.
2. the central core that the present invention provides is the symmetrical cosine function type photonic crystal Low threshold optical bistability of Kerr defect, with
Conventional photonic crystal optical bistability compares and has lower-threshold and subminiature feature, can be applicable to optic communication and integrated optical circuit
Photoswitch, the occasion such as optical storage.
3. present invention focuses primarily on the non-linear microcavity of Kerr respectively with both sides around by cosine function index medium
Layer A, B replace two and half limited photonic crystals (BA) of compositionm(AB)mBe coupled the lower-threshold realizing in light wave frequency range
Bistable research, the central core studied is that the symmetrical cosine function type photonic crystal Low threshold optical bistability of Kerr defect can be real
The now coupling integration with other multifunction integrated optical circuit device.
Brief description
Fig. 1 be central core be the symmetrical cosine function type photonic crystal Low threshold optical bistability structural representation of Kerr defect.
Fig. 2 is less at incident intensity, and in defect layer D, nonlinear effect is negligible, and D is equivalent to a linear discontinuities layer.
Fig. 3 is the central linear tunnelling mode ω of cosine function type photonic crystal Fig. 2m1=1.0029 ω0Near bistable state,
Multistable curve.
Fig. 4 is periodic structure (BA)5D(AB)5Bistable state threshold near the tunnelling mode of respective center for the longitudinal cosine type photonic crystal
Value is with the linear refractive index of non-linear microcavity DTake respectively the 2nd, the 3rd, 4 when variation tendency, in Fig. 4, red data point represents high threshold
Value, black data point represents Low threshold.
Fig. 5 is periodic structure (BA)5D(AB)5Sinc type photonic crystal heart tunnelling mode ω whereinm=0.9949 ω0Attached
Near bistable threshold is with the linear refractive index of non-linear microcavity DTake respectively the 2nd, the 3rd, 4 when variation tendency.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
Fig. 1 be central core be the symmetrical cosine function type photonic crystal Low threshold optical bistability structural representation of Kerr defect.
Fig. 2 is less at incident intensity, and in defect layer D, nonlinear effect is negligible, and D is equivalent to a linear discontinuities layer.
It is fixed to take in Fig. 1When, periodicity m take respectively the 5th, the 6th, 7 when cosine function type photonic crystal different cycles number transmission spectrum,
In (a), (b) and (c) of Fig. 1, three linear tunnelling modes are ω respectivelym1=0.9805 ω0、ωm2=1.0029 ω0、ωm3=
1.025ω0；Calculate and also find, whenTake respectively the 2nd, the 3rd, 4 when, also have a collinearity tunnelling mode ωm=1.0029 ω0.
Fig. 3 is the central linear tunnelling mode ω of cosine function type photonic crystal Fig. 2m1=1.0029 ω0Near bistable state,
Multistable curve.
Fig. 4 is periodic structure (BA)5D(AB)5Bistable state threshold near the tunnelling mode of respective center for the longitudinal cosine type photonic crystal
Value is with the linear refractive index of non-linear microcavity DTake respectively the 2nd, the 3rd, 4 when variation tendency.
Fig. 5 is periodic structure (BA)5D(AB)5Sinc type photonic crystal heart tunnelling mode ω whereinm=0.9949 ω0Attached
Near bistable threshold is with the linear refractive index of non-linear microcavity DTake respectively the 2nd, the 3rd, 4 when variation tendency.A, medium B layer folding
Rate of penetrating is distributed to be respectivelyWith
The thickness of dielectric layer A and B is respectively dA=(p-q)/2=a, dB=(p+q)/2=b, the two is also satisfied
In the present embodiment, the Low threshold optical bistable device of a kind of function type photonic crystal of defect containing Kerr, this contains Kerr and lacks
Falling into function type photonic crystal is to be constituted central core, the left and right sides by cosine function index medium by Kerr NONLINEAR DEFECT layer D
Layer A, B replace two and half limited photonic crystals (BA) of compositionm(AB)mSymmetric periodic structure (BA)mD(AB)m, wherein m is
Periodicity.
The central core that the present invention provides is the symmetrical cosine function type photonic crystal Low threshold optical bistability structure of Kerr defect
Schematic diagram, as it is shown in figure 1, this example takes periodicity m=5, uses two kinds of different cosine function index dielectric layer A, B, it
Refractive index with the change profile formula of locus coordinate z be respectively：
Wherein nA(0)=3.37, nB(0)=1.544, A1=0.1, A2=0.2, a=221.388nm, b=483.211nm, is situated between
The thickness of matter layer A, B is d respectivelyA=a=221.388nm, dB=b=483.211nm, A, medium B layer optical thickness meetThe half limited photonic crystal (BA) being made up of them5(AB)5It is positioned at central core D
Both sides, z-axis is perpendicular to this photonic crystal interface, as shown in Figure 1；Central core D is be made up of Kerr nonlinear dielectric micro-
Chamber, this Kerr nonlinear dielectric refractive index isWhereinFor linear refractive index, with light intensity without
Closing, three rank electric susceptibilities are c(3)=2.5 × 10-12m2V-2, EDZ () is the electric-field intensity in microcavity at z；Microcavity length dDMeetIncident light wave center circle frequency w0=6.313016 × 1014Rad/s, light wave incidence angle is θ=π/12.
Being known by Fig. 3, Fig. 4, the cosine function type photonic crystal of defect containing Kerr realizes bistable incident light wave frequency distribution
Be centrifugal pump, i.e. this structure only could realize bistable state at specific frequency.Low threshold bistable state to be obtained, at defect layer D
Under conditions of optical thickness is constant, the linear refractive index of nonlinear materialValue is lower realizes that bistable threshold value is lower.
The central core that the present invention provides is that the symmetrical cosine function type photonic crystal Low threshold optical bistability of Kerr defect has
Subminiature feature.The central core that can be obtained this example by the above-mentioned concrete data providing provides is the symmetrical cosine of Kerr defect
Function type photonic crystal Low threshold optical bistability total optical thickness along the z-axis direction is 16.41370632mm.
When incident intensity is less, the nonlinear effect in defect layer D is negligible, and D is equivalent to a linear discontinuities layer.By
In the periodicity close relation of periodic structure transmissivity and periodic structure, fixed takingWhen, periodicity m=n takes respectively
5th, the 6th, 7 when the type of cosine function containing defect, wherein in (a), (b) and (c) in Fig. 1, three linear tunnelling modes are all：ωm1=
0.9805ω0、ωm2=1.0029 ω0、ωm3=1.025 ω0, as shown in Figure 2.Frequency characteristic due to periodic structure containing defect
Very tight with defect layer index of refraction relationship, calculate discovery:WhenTake respectively the 2nd, the 3rd, 4 when, longitudinal cosine type photonic crystal has one altogether
Collinearity tunnelling mode ωm=1.0029 ω0, this is also the center tunnelling mode of Fig. 2.
When incident intensity is bigger, the nonlinear effect of defect layer D is obvious, and D becomes non-linear microcavity, now output intensity
With input light Qianghian relation curve, as it is shown on figure 3, Fig. 3 is given be cosine function type photonic crystal Fig. 2 (c) in
The heart linear tunnelling mode ωm1=1.0029 ω0Near bistable state, multistable curve.From formula (3), non-linear microcavity D infolding
Penetrate rate nDBecoming the increase with light intensity big, its relative dielectric constant also becomes big, it is possible to resultant field reduces in causing D,
Nonlinear effect will weaken, it is achieved bistable threshold value is possible to nDIncrease and become big.Calculate further and show, identical
Under the premise of periodic structure, when A, medium B layer refractive index remainder string functional form relatively takes Sinc functional form when bistable threshold
Lower, as shown in Figure 4 and Figure 5.Correlative study is it is also shown that the more conventional photonic crystal of Sinc function type photonic crystal bistable threshold
Low.
These are only some embodiments of the present invention, to those skilled in the art, without departing from this
On the premise of bright creation design, also can carry out some deformation and improve, these broadly fall into protection scope of the present invention.
Claims (6)
1. the Low threshold optical bistable device of the function type photonic crystal of defect containing Kerr, it is characterised in that this contains Kerr defect
Function type photonic crystal is to be constituted central core, the left and right sides by cosine function index dielectric layer by Kerr NONLINEAR DEFECT layer D
A, B replace two and half limited photonic crystals (BA) of compositionm(AB)mSymmetric periodic structure (BA)mD(AB)m, wherein m is week
Issue.
2. the Low threshold optical bistable device of the function type photonic crystal of defect containing Kerr according to claim 1, its feature exists
In the relational expression that A, medium B layer refractive index are changed by cosine function with locus is
WithThe thickness of dielectric layer A and B is respectively dA=a, dB=b, both meetsWherein λ0And ω0It is centre wavelength and the center circle frequency of incident light wave respectively.
3. the Low threshold optical bistable device of the function type photonic crystal of defect containing Kerr according to claim 1, its feature exists
In defect layer D is the nonlinear dielectric with Kerr effect, and the index distribution of Kerr medium isWhereinFor linear refractive index, unrelated with light intensity；χ(3)For its three rank electric susceptibility；ED(z)
It is the electric-field intensity in defect layer at z；Microcavity length dDMeet
4. the Low threshold optical bistable device of the function type photonic crystal of defect containing Kerr according to Claims 2 or 3, its feature
Being, parameter value is respectively：nA(0)=3.37, nB(0)=1.544, A1=0.2, A2=0.1, a=221.388nm, b=
483.211nm, then the thickness of dielectric layer A is dA=221.388nm, the thickness of dielectric layer B is dB=483.211nm；Defect layer D
Linear refractive indexThree rank electric susceptibilities χ(3)=2.5 × 10-12m2·V-2, its thickness is dD=373.039nm；
Light wave incidence angle θ=π/12, incidence wave center circle frequency
5. the Low threshold optical bistable device of the function type photonic crystal of defect containing Kerr according to claim 3, its feature exists
In when incident intensity is less, the nonlinear effect in defect layer D is negligible, and defect layer D is a linear discontinuities layer；Cycle
Structure transmissivity and the periodicity close relation of periodic structure, determine when takingWhen, periodicity m take respectively the 5th, the 6th, 7 when contain
Defect cosine function type photonic crystal (BA)mD(AB)mHave three linear tunnelling modes：ωm1=0.9805 ω0、ωm2=
1.0029ω0、ωm3=1.025 ω0；WhenTake respectively the 2nd, the 3rd, 4 when, longitudinal cosine type photonic crystal has a collinearity tunnelling mode
ωm=1.0029 ω0.
6. the Low threshold optical bistable device of the function type photonic crystal of defect containing Kerr according to claim 3, its feature exists
In refractive index n in defect layer DDBecoming the increase with light intensity big, its relative dielectric constant also becomes big, resultant field in defect layer D
Reducing, nonlinear effect will weaken, it is achieved bistable threshold value is with refractive index nDIncrease and become big.
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| CN108761639A (en) * | 2018-05-02 | 2018-11-06 | 上海大学 | A kind of photonic crystal all-optical diode |
| CN109298583A (en) * | 2018-12-06 | 2019-02-01 | 湖北科技学院 | One kind being based on the bistable all-optical switch of graphene optical and optical memory |
| CN109669227A (en) * | 2019-02-27 | 2019-04-23 | 湖北科技学院 | A kind of photonic crystal of pair of Defect Modes reflectivity enhancing |
| CN111505757A (en) * | 2020-06-02 | 2020-08-07 | 中国人民解放军火箭军工程大学 | Infrared and laser compatible camouflage film system structure utilizing symmetric center defect |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108761639A (en) * | 2018-05-02 | 2018-11-06 | 上海大学 | A kind of photonic crystal all-optical diode |
| CN109298583A (en) * | 2018-12-06 | 2019-02-01 | 湖北科技学院 | One kind being based on the bistable all-optical switch of graphene optical and optical memory |
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| CN109669227A (en) * | 2019-02-27 | 2019-04-23 | 湖北科技学院 | A kind of photonic crystal of pair of Defect Modes reflectivity enhancing |
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| CN111505757A (en) * | 2020-06-02 | 2020-08-07 | 中国人民解放军火箭军工程大学 | Infrared and laser compatible camouflage film system structure utilizing symmetric center defect |
| CN111505757B (en) * | 2020-06-02 | 2022-03-01 | 中国人民解放军火箭军工程大学 | Infrared and laser compatible camouflage film system structure utilizing symmetric center defect |
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