CN110737047B - Read-write controllable silicon-based integrated optical buffer - Google Patents
Read-write controllable silicon-based integrated optical buffer Download PDFInfo
- Publication number
- CN110737047B CN110737047B CN201911043032.9A CN201911043032A CN110737047B CN 110737047 B CN110737047 B CN 110737047B CN 201911043032 A CN201911043032 A CN 201911043032A CN 110737047 B CN110737047 B CN 110737047B
- Authority
- CN
- China
- Prior art keywords
- silicon
- read
- optical
- optical buffer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
- G02F1/093—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect used as non-reciprocal devices, e.g. optical isolators, circulators
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12038—Glass (SiO2 based materials)
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a read-write controllable silicon-based integrated optical buffer, which comprises a non-reciprocal silicon-based rectangular waveguide and a graphene layer which are arranged in sequence from left to right, wherein the graphene layer is integrated on the right output end surface of the non-reciprocal silicon-based rectangular waveguide to form a read/write control end surface; the read/write control end face regulates and controls the transmission coefficient of the graphene in a voltage applying mode, determines whether unidirectional transmission signal light entering the non-reciprocal silicon-based rectangular waveguide can penetrate through the graphene layer, and realizes the read/write control of the optical buffer. The read-write controllable silicon-based integrated optical buffer can achieve the effects of convenient and adjustable low-loss signal light write-in and read-out optical buffer operation.
Description
Technical Field
The invention relates to the technical field of photoelectron integration, in particular to a read-write controllable silicon-based integrated optical buffer.
Background
Research on all-optical caching technology is also gaining more and more attention as a key problem for realizing a photon computer. The scheduling and control of data in the optical quantum computing technology are the basis of an optical quantum computer, and various registers, memories and buffers for accessing data are filled in the optical quantum computer, whether in a CPU or a complete machine. After using optical interconnections between chips, it is advantageous from the viewpoints of increasing the speed, improving the signal quality, and reducing power consumption if the data storage can be performed in the optical domain without performing a plurality of photoelectric optical conversions. For node equipment of an all-optical network, such as an all-optical switch router, characteristics of node capacity, throughput, packet loss rate and the like of the all-optical switch router are directly related to characteristics of capacity, access speed and the like of a memory of the all-optical switch router, and an all-optical cache technology can provide adjustable cache time so that a node can perform frame header processing and can solve the problem of competition of the same port, so that the all-optical cache technology is a key technology for controlling all-optical routes and solving channel competition, and the quality of the all-optical cache technology directly determines the information processing and storage performance of an optical quantum computer. Therefore, the research of the all-optical buffer has important significance for the development of future photon computers.
Currently in all studies, optical buffers of various structures have their respective advantages and challenges: the slow light buffer based on Electric Induced Transparency (EIT) is high in cost, and the system structure and the manufacturing process are complex, so that the slow light buffer is difficult to realize; optical buffers based on fiber delay lines can provide larger delays, but their resolution is limited by the tuning step, and their size is large and cannot be easily integrated into microsystems; the optical buffer based on the photonic crystal slow light effect has the same problem as the Stimulated Brillouin Scattering (SBS) slow light effect, the dynamic range of the delay time is small, and the total delay time is less than nanosecond level; the optical microring resonator is a small-sized, compact optical device which is comparable to but slightly inferior in optical performance, tunability, flexibility and reproducibility to an optical buffer of a photonic crystal structure, and it is impossible to simultaneously reduce the size and dispersion of a multi-ring resonant optical buffer. The structure of multistage cascade of the optical switch and the waveguide delay line is adopted to realize the large-range adjustment of the optical delay amount, but the structure is not a buffer in a real sense, and is more precisely a temporary storage. Furthermore, these types of buffers are limited by bandwidth and delay time, i.e., the product of the storage time and the system bandwidth is fixed. It is not possible to store large data for long periods of time within the cavity.
Although there are some international research units for researching nonreciprocal waveguides, most of their research focuses on realizing nonreciprocal devices such as an optical isolator, an optical circulator and the like by using nonreciprocal waveguides, and related research reports for applying nonreciprocal waveguides to an optical buffer do not exist at present. In addition, most of the research focuses on terahertz wave bands, and related research reports on optical communication wave bands are not found, but terahertz frequency domain spectrums have the defects of low radiation power, narrow spectrum range and the like, the size of a terahertz device is mostly in the order of tens of micrometers to millimeters, and the miniaturization of the system size is difficult to realize.
One important aspect of evaluating the performance of optical buffers is the ease of signal light "write" and "read" operations. In a traditional all-optical buffer based on a semiconductor SOA amplifier, because an optical signal needs to repeatedly pass through the optical amplifier, noise accumulation is easily caused, and the control technology is relatively complex.
Disclosure of Invention
The invention aims to provide a read-write controllable silicon-based integrated optical buffer which is simple in structure, convenient and controllable, and can realize the buffer and read-write control of C-band signal light in optical communication.
In order to achieve the purpose, the invention provides a read-write controllable silicon-based integrated optical buffer, which comprises a non-reciprocal silicon-based rectangular waveguide and a graphene layer which are sequentially arranged from left to right, wherein the graphene layer is integrated on the right output end surface of the non-reciprocal silicon-based rectangular waveguide to form a read/write control end surface;
the read/write control end face regulates and controls the transmission coefficient of the graphene in a voltage applying mode, determines whether unidirectional transmission signal light entering the non-reciprocal silicon-based rectangular waveguide can penetrate through the graphene layer, and realizes the read/write control of the optical buffer.
Preferably, when a lower voltage is applied to the graphene layer, the graphene transmission coefficient is smaller, and the unidirectional transmission signal light entering the nonreciprocal silicon-based rectangular waveguide is reflected on the surface of the graphene layer to carry out amplitude accumulation and realize writing control on the optical buffer;
when a higher voltage is applied to the graphene layer, the graphene transmission coefficient is increased, and the optical pulse signals stored in the nonreciprocal silicon-based rectangular waveguide penetrate through the graphene layer to realize the control of reading of the optical buffer.
Preferably, the nonreciprocal silicon-based rectangular waveguide comprises a metal nano layer, a magneto-optical material layer, a silicon semiconductor layer and a metal nano layer which are sequentially overlapped from bottom to top.
Preferably, the size of the nonreciprocal silicon-based rectangular waveguide is in the nanometer order.
Preferably, the metal nanolayer is an Ag metal nanolayer.
Preferably, the magneto-optical material layer is a Ce: YIG layer.
Preferably, the magneto-optical material layer breaks the symmetry of dielectric constant under the action of an external magnetic field and under the condition of wavelength of a C waveband for optical communication, and generates the gyroelectric anisotropy, so that light has the property of unidirectional transmission.
Preferably, the non-reciprocal frequency interval is modulated by the faraday rotation coefficient of the layer of magneto-optical material, which is proportional to the size of the non-reciprocal frequency interval.
Preferably, the wavelength range of the optical communication C-band is 1530-1565 nm.
Preferably, the chemical potential, the electrical conductivity and the dielectric constant of the graphene layer are adjusted by regulating and controlling an external voltage loaded on the graphene layer, so that the graphene layer shows a metal property, and the function of the optical switch is realized.
Preferably, the loss of the graphene layer surface waves is reduced by increasing the chemical potential of the graphene layer.
Compared with the prior art, the read-write controllable silicon-based integrated optical buffer provided by the invention has the following beneficial effects:
1. the magneto-optical material layer adopted by the invention can break the limit of time-bandwidth limit under the action of an external magnetic field, and the bandwidth interval is adjustable, and the magneto-optical material layer can also work in an optical communication C wave band.
2. The output control end face of the nonreciprocal silicon-based rectangular waveguide adopts a read-write control scheme of a graphene material, so that the operation of conveniently writing and reading the optical buffer by signal light with adjustability and low loss can be realized.
Drawings
The drawings used in the present application will be briefly described below, and it should be apparent that they are merely illustrative of the concepts of the present invention.
FIG. 1 is a schematic diagram of a read-write controllable silicon-based integrated optical buffer according to the present invention;
FIG. 2 is a dispersion plot of a nonreciprocal silicon-based rectangular waveguide;
FIG. 3 is a group velocity diagram of a unidirectional transmission region of a nonreciprocal silicon-based rectangular waveguide;
FIG. 4 is a graph of conductivity versus chemical potential of graphene layers at 1550nm for optical communications;
fig. 5 is a graph of dielectric constant of graphene layers as a function of chemical potential at 1550nm band for optical communication.
Summary of reference numerals:
1. metal nano layer 2, magneto-optical material layer 3, silicon semiconductor layer
4. Metal nanolayer 5, graphene layer
Detailed Description
Hereinafter, an embodiment of a read-write controllable silicon-based integrated optical buffer according to the present invention will be described with reference to the accompanying drawings.
The embodiments described herein are specific embodiments of the present invention, are intended to be illustrative and exemplary in nature, and are not to be construed as limiting the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include technical solutions which employ any obvious replacement or modification of the embodiments described herein.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of respective portions and their mutual relationships. It should be noted that the drawings are not necessarily drawn to the same scale in order to clearly illustrate the structures of the various elements of the embodiments of the invention. The same reference numerals are used to designate the same or similar parts.
Specific embodiments of the present invention are explained below with reference to fig. 1 to 5.
As shown in fig. 1, the present invention provides a read-write controllable silicon-based integrated optical buffer, which comprises a non-reciprocal silicon-based rectangular waveguide and a graphene layer 5 sequentially arranged from left to right, wherein the graphene layer 5 is integrated on a right output end surface of the non-reciprocal silicon-based rectangular waveguide to form a read/write control end surface. The read/write control end surface regulates and controls the transmission coefficient of the graphene in a voltage applying mode, determines whether unidirectional transmission signal light entering the nonreciprocal silicon-based rectangular waveguide can penetrate through the graphene layer 5, and realizes the read/write control of the optical buffer.
In a further embodiment of the present invention, the nonreciprocal silicon-based rectangular waveguide comprises a metal nanolayer 1, a layer of magneto-optical material 2, a silicon semiconductor layer 3, and a metal nanolayer 4 sequentially stacked from bottom to top. Preferably, the size of the nonreciprocal silicon-based rectangular waveguide is in a nanometer level, the metal nano layers 1 and 4 are Ag metal nano layers, and the magneto-optical material layer 2 is a Ce: YIG layer.
The metal nanolayers 1, 4 of the present invention are Ag metal nanolayers because Ag metal has lower loss than other metals.
The magneto-optical material layer 2 is a Ce-YIG layer. Under the action of an external magnetic field, the magneto-optical material layer 2(Ce: YIG layer) can break the symmetry of dielectric constant under the wavelength condition of an optical communication C waveband, generate the rotary electric anisotropy, namely break the Lorentz mutual anisotropy, realize the exceeding of the time-bandwidth limit and enable light to have the property of unidirectional transmission. Wherein, the wavelength range of the optical communication C wave band is 1530-1565 nm. The dielectric constant of the magneto-optical material is expressed as:
the invention regulates and controls the non-reciprocal frequency interval by utilizing the Faraday optical rotation coefficient of the magneto-optical material layer 2, and the Faraday optical rotation coefficient is in direct proportion to the size of the non-reciprocal frequency interval. In order to calculate the nonreciprocal frequency interval of the optical buffer, the dispersion curve of the nonreciprocal silicon-based rectangular waveguide structure shown in fig. 2 can be obtained by performing calculation through a dispersion equation, where the dispersion equation is:
wherein, in the dispersion equation: k is a propagation constant, in the silicon semiconductor layer
k0Omega/c is the wave number in vacuum, siliconHas a relative dielectric constant ofSiThe thickness of the silicon semiconductor layer 3 is d; in layers of magneto-optical material
The dielectric constant of the magneto-optical material is the Fock dielectric constant; overcladding in a non-reciprocal silicon-based rectangular waveguide
mIs the dielectric constant of the outer layer material and t is the time. Due to the damage to the Lorentz reciprocity, the dispersion curve is asymmetric with respect to the wave vector k, complete unidirectional transmission can be realized in an asymmetric frequency region (between two horizontal dotted lines in the figure), and the nonreciprocal silicon-based rectangular waveguide shows nonreciprocity. Wherein the size of the Faraday rotation coefficient determines the size of the nonreciprocal frequency interval. Therefore, the nonreciprocal silicon-based rectangular waveguide can break the limit of time-bandwidth limit under the action of an external magnetic field, and the maximum nonreciprocal frequency interval can reach 6.88 multiplied by 1013rad/s, over which signal light can be transmitted unidirectionally. Therefore, signal light is injected into the nonreciprocal silicon-based rectangular waveguide, and nonreciprocal unidirectional transmission can be realized under the action of an external magnetic field.
For a rectangular nonreciprocal silicon-based waveguide, the slope of the dispersion curve corresponds to the normalized propagation velocity v in the rectangular nonreciprocal silicon-based waveguidegAnd c, the ratio of the total weight to the total weight of the product. In order to calculate the buffer performance of the optical buffer, a dispersion curve is obtained by using a dispersion equation and combining an electromagnetic wave group velocity formula
The caching performance of the nonreciprocal silicon-based rectangular waveguide shown in fig. 3 can be obtained through calculation, and fig. 3 calculates different Faraday optical rotation coefficients thetafThe normalized group velocity and the normalized angular frequency omega/omega of the nonreciprocal silicon-based rectangular waveguidepAnd normalized propagation constant k/kpIt can be seen that the group velocity slowing phenomenon occurs regardless of whether ω (dotted line) increases or k (solid line) increases, and when the faraday rotation coefficient is 57deg/um, the slow light effect is more significant, and the minimum transmission velocity can reach 1.25 × 10-4c。
The read/write control end surface of the nonreciprocal silicon-based rectangular waveguide consists of a graphene layer 5 integrated on the end surface of the nonreciprocal silicon-based rectangular waveguide. By regulating and controlling external voltage loaded on the graphene layer 5, adjusting the chemical potential of the graphene layer 5, and changing the conductivity and the dielectric constant, the graphene layer 5 shows special metal properties, and the function of an optical switch is realized; and the loss of surface waves can be reduced by increasing the chemical potential of the graphene layer.
The surface conductivity can be calculated by the following kuber formula:
wherein e represents the electron charge, represents the energy,
for a reduced Planck constant, ω denotes the angular frequency, a Fermi-Dirac distribution of electrons, T is the temperature, μcAs permeability (which can be varied by varying doping and bias voltage), and as relaxation time. Surface dielectric constant of graphene layer 5:
where Δ is the thickness of the single layer graphene. Taking fig. 4 and 5 as an example, in order to obtain a graph of the conductivity of the graphene layer 5 with the change of the chemical potential calculated according to the formula under the 1550nm wavelength condition of optical communication, the real part of the dielectric constant of the graphene layer 5 hardly changes between 0eV and 0.4eV, and then the real part of the dielectric constant decreases with the increase of the chemical potential; the imaginary part of the dielectric constant increases with the increase of the chemical potential before 0.4eV and then decreases, and it is noted that the interval of decrease of the real part of the dielectric constant of the graphene layer 5 is from positive to negative, indicating that the graphene layer 5 starts to shift from the property of the medium to the property of the metal. Wherein the chemical potential is about 0.515eV, the absolute value of the dielectric constant of the graphene layer 5 is the smallest and is almost 0, and this specific point becomes the ENZ (epsilon near zero) point, at which the electromagnetic wave energy is almost losslessThrough the graphene layer 5.
Therefore, the invention can determine whether the unidirectional transmission signal light entering the nonreciprocal silicon-based rectangular waveguide can penetrate through the graphene layer 5 by utilizing the regulation and control of the transmission coefficient of the graphene layer 5, thereby realizing the control of reading/writing of the optical buffer. When signal light is transmitted to the interface of the nonreciprocal silicon-based rectangular waveguide and the graphene layer 5, when lower voltage is loaded on the graphene layer 5, the graphene transmission coefficient is lower, and the one-way transmission signal light entering the nonreciprocal silicon-based rectangular waveguide is reflected on the surface of the graphene to accumulate amplitude and control writing of the optical buffer. When a higher voltage is applied to the graphene layer 5, the optical pulse signals stored in the nonreciprocal silicon-based rectangular waveguide can penetrate through the graphene, so that the reading of the optical buffer is controlled.
The above description is directed to an embodiment of a read/write controllable silicon-based integrated optical buffer of the present invention, which is provided for the purpose of illustrating the spirit of the present invention. Note that those skilled in the art can modify and combine the features of the above-described embodiments without departing from the spirit of the present invention, and therefore, the present invention is not limited to the above-described embodiments. Moreover, the technical features disclosed above are not limited to the combinations with other features disclosed, and other combinations between the technical features can be performed by those skilled in the art according to the purpose of the invention, so as to achieve the purpose of the invention.
Claims (9)
1. A read-write controllable silicon-based integrated optical buffer is characterized by comprising a non-reciprocal silicon-based rectangular waveguide and a graphene layer which are sequentially arranged from left to right, wherein the graphene layer is integrated on the right output end face of the non-reciprocal silicon-based rectangular waveguide to form a read/write control end face;
the read/write control end surface regulates and controls the transmission coefficient of the graphene in a voltage applying mode, determines whether unidirectional transmission signal light entering the non-reciprocal silicon-based rectangular waveguide can penetrate through the graphene layer, and realizes the read/write control of the optical buffer;
the nonreciprocal silicon-based rectangular waveguide comprises a metal nano layer, a magneto-optical material layer, a silicon semiconductor layer and a metal nano layer which are sequentially overlapped from bottom to top.
2. The silicon-based integrated optical buffer of claim 1, wherein when a lower voltage is applied to the graphene layer, the graphene transmission coefficient is smaller, and unidirectional transmission signal light entering the non-reciprocal silicon-based rectangular waveguide is reflected on the surface of the graphene layer to perform amplitude accumulation and realize writing control on the optical buffer;
when a higher voltage is applied to the graphene layer, the graphene transmission coefficient is increased, and the optical pulse signals stored in the nonreciprocal silicon-based rectangular waveguide penetrate through the graphene layer to realize the control of reading of the optical buffer.
3. The read-write controllable silicon-based integrated optical buffer of claim 1 wherein the nonreciprocal silicon-based rectangular waveguide has a dimension on the order of nanometers.
4. The write-read controllable silicon-based integrated optical buffer of claim 1 wherein the metal nanolayer is an Ag metal nanolayer.
5. The silicon-based integrated optical buffer of claim 1, wherein the magneto-optical material layer is a Ce: YIG layer.
6. The silicon-based integrated optical buffer of claim 5, wherein the magneto-optical material layer breaks the dielectric constant symmetry under the action of an external magnetic field and under the wavelength condition of the C-band in optical communication to generate the electro-rotation anisotropy, so that the light has the property of unidirectional transmission.
7. The Si-based integrated optical buffer of claim 5, wherein the non-reciprocal frequency interval is controlled by Faraday rotation coefficient of the magneto-optical material layer, wherein the Faraday rotation coefficient is proportional to the size of the non-reciprocal frequency interval.
8. The read-write controllable silicon-based integrated optical buffer of claim 6, wherein the wavelength range of the C-band of optical communication is 1530-1565 nm.
9. The read-write controllable silicon-based integrated optical buffer of claim 1, wherein the chemical potential, conductivity and dielectric constant of the graphene layer are adjusted by adjusting the external voltage loaded on the graphene layer, so that the graphene layer shows metal properties and the function of an optical switch is realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911043032.9A CN110737047B (en) | 2019-10-30 | 2019-10-30 | Read-write controllable silicon-based integrated optical buffer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911043032.9A CN110737047B (en) | 2019-10-30 | 2019-10-30 | Read-write controllable silicon-based integrated optical buffer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110737047A CN110737047A (en) | 2020-01-31 |
| CN110737047B true CN110737047B (en) | 2020-12-04 |
Family
ID=69270449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911043032.9A Active CN110737047B (en) | 2019-10-30 | 2019-10-30 | Read-write controllable silicon-based integrated optical buffer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110737047B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115061236B (en) * | 2022-03-24 | 2023-10-20 | 北京交通大学 | Controllable silicon-based integrated optical buffer of reading and writing of Sagnac coupling micro-ring array structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101067673A (en) * | 2007-05-31 | 2007-11-07 | 浙江大学 | Nonreciprocal device based on magneto-optical resonator cavity |
| CN104062775A (en) * | 2014-06-30 | 2014-09-24 | 浙江大学 | Nonvolatile optical memory unit |
| CN105393477A (en) * | 2014-06-13 | 2016-03-09 | 华为技术有限公司 | Optical buffer and optical buffering method |
| CN106997925A (en) * | 2016-01-26 | 2017-08-01 | 国家纳米科学中心 | A kind of memory based on graphene suspension beam structure and preparation method thereof |
| CN109298583A (en) * | 2018-12-06 | 2019-02-01 | 湖北科技学院 | One kind being based on the bistable all-optical switch of graphene optical and optical memory |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009198897A (en) * | 2008-02-22 | 2009-09-03 | Oki Electric Ind Co Ltd | Optical buffer device |
-
2019
- 2019-10-30 CN CN201911043032.9A patent/CN110737047B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101067673A (en) * | 2007-05-31 | 2007-11-07 | 浙江大学 | Nonreciprocal device based on magneto-optical resonator cavity |
| CN105393477A (en) * | 2014-06-13 | 2016-03-09 | 华为技术有限公司 | Optical buffer and optical buffering method |
| CN104062775A (en) * | 2014-06-30 | 2014-09-24 | 浙江大学 | Nonvolatile optical memory unit |
| CN106997925A (en) * | 2016-01-26 | 2017-08-01 | 国家纳米科学中心 | A kind of memory based on graphene suspension beam structure and preparation method thereof |
| CN109298583A (en) * | 2018-12-06 | 2019-02-01 | 湖北科技学院 | One kind being based on the bistable all-optical switch of graphene optical and optical memory |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110737047A (en) | 2020-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Fang et al. | Generalized non-reciprocity in an optomechanical circuit via synthetic magnetism and reservoir engineering | |
| US8983251B2 (en) | Electro-optical waveguide apparatuses and methods thereof | |
| Preston et al. | High-speed all-optical modulation using polycrystalline silicon microring resonators | |
| CN103176294B (en) | A kind of all-fiber electro-optical modulator based on grapheme material and method thereof | |
| Liang et al. | On-chip sub-terahertz surface plasmon polariton transmission lines with mode converter in CMOS | |
| Nozaki et al. | Ultralow-energy electro-absorption modulator consisting of InGaAsP-embedded photonic-crystal waveguide | |
| CN105372851A (en) | Optical fiber absorption enhanced electro-optical modulator based on graphene/molybdenum disulfide heterojunction | |
| Vahed et al. | Hybrid plasmonic optical modulator based on multi-layer graphene | |
| CN110687695A (en) | Trapezoidal graphene-based polarization-insensitive organic polymer absorption type optical modulator | |
| CN110737047B (en) | Read-write controllable silicon-based integrated optical buffer | |
| Yang et al. | Ultracompact plasmonic switch based on graphene-silica metamaterial | |
| Tsakmakidis et al. | Topological, nonreciprocal, and multiresonant slow light beyond the time-bandwidth limit | |
| Shah et al. | Graphene-assisted polarization-insensitive electro-absorption optical modulator | |
| Jian-rong et al. | Graphene-based\waveguide terahertz wave attenuator | |
| Karimkhani et al. | Hybrid broadband optical modulator based on multi-layer graphene structure and silver nano-ribbons | |
| Luan et al. | Design and optimization of a graphene modulator based on hybrid plasmonic waveguide with double low-index slots | |
| Wang et al. | Photonic crystal slow light Mach–Zehnder interferometer modulator for optical interconnects | |
| Bagci et al. | Enhancement of buffer capability in slow light photonic crystal waveguides with extended lattice constants | |
| CN104865772B (en) | A kind of three value optics reversible logic devices based on micro-ring resonator | |
| Wang et al. | Two-dimensional material integrated micro-nano fiber, the new opportunity in all-optical signal processing | |
| Zhou et al. | A high-performance terahertz modulator based on double-layer graphene | |
| Safinezhad et al. | Ultra-compact all-optical reversible Feynman gate based on suspended graphene plasmonic waveguides | |
| Zarepour et al. | Multilayer graphene on hBN substrate waveguide modulator | |
| Liu et al. | Ultrafast suspended self-biasing graphene modulator with ultrahigh figure of merit | |
| Wang et al. | Enhanced absorption study of one-way absorber based on magnetophotonic crystal combined with graphene |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |