CN106997925A - A kind of memory based on graphene suspension beam structure and preparation method thereof - Google Patents
A kind of memory based on graphene suspension beam structure and preparation method thereof Download PDFInfo
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- CN106997925A CN106997925A CN201610051372.6A CN201610051372A CN106997925A CN 106997925 A CN106997925 A CN 106997925A CN 201610051372 A CN201610051372 A CN 201610051372A CN 106997925 A CN106997925 A CN 106997925A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
- H10N70/8845—Carbon or carbides
Abstract
The invention provides a kind of memory based on graphene suspension beam structure, the memory includes matrix, first electrode, second electrode, the 3rd electrode and graphene overarm, and wherein first electrode, second electrode and the 3rd electrode are formed on matrix；Graphene one end of hanging oneself from a beam is fixed in first electrode, and the other end is hanging；Second electrode is located at below the hanging one end of graphene overarm, and the 3rd electrode is not suspended on the part of substrate contact above graphene overarm and second electrode.First electrode, which hangs oneself from a beam graphene, is coated on " reading " function of execution memory in electrode, second electrode performs " writing " function of memory, 3rd electrode performs " wiping " function of memory, and the mutual conversion of memory state " 0 " and " 1 " can be realized by each electrode synergy.The memory construction is simple, and it is to be based on conventional semiconductors plane preparation technology that it, which is prepared, can meet the requirement of large-scale industrial production, storage density is big.
Description
Technical field
The invention belongs to resistance-variable storing device technical field, it is related to a kind of memory based on graphene suspension beam structure
And preparation method thereof, more particularly to a kind of deposited based on graphene suspension beam structure and the non-volatile of ferrimagnet
Reservoir and preparation method thereof.
Background technology
Developed rapidly as numeral is high-tech, higher want is proposed to the performance that existing information stores product
Ask, for example：At high speed, the requirement such as high density, long-life, low cost and low-power consumption.Resistor-type memory
Technology can be switched between high-impedance state and low resistance state based on memory cell in the presence of electric signal
Operation principle.When making electric elements using the principle, different voltages can be applied to it, made it into
To different states, with non-volatile.It is non-with the development of micro-nano technology technology and material preparation technology
Volatile memory turns into the study hotspot in this year, due to its storage density height, fast response time, is manufactured into
The advantages of this is low and can realize three-dimensional storage and the memory of future generation for being considered to have development prospect.
Graphene is a kind of new material for the individual layer laminated structure being made up of carbon atom, be it is a kind of by carbon atom with
sp2Hybridized orbit composition hexangle type is in the flat film of honeycomb lattice, the two-dimentional material of only one of which carbon atom thickness
Material.The maximum characteristic of graphene is that the movement velocity of wherein electronics has reached the 1/300 of the light velocity, considerably beyond
Movement velocity of the electronics in general conductor.This cause in graphene electronics (or should more accurately be referred to as " carry
Lotus ") property and relativistic neutrino it is closely similar.Another characteristic of graphene is that it is conductive electric
Son can not only without barrier be moved in lattice, and speed is exceedingly fast, considerably beyond electronics in metallic conductor
Or the translational speed in semiconductor.Further, its thermal conductivity exceedes all existing known substances.Graphene is
Most thin, the most hard nano material in the world known, it is almost fully transparent, only absorbs 2.3% light；
Thermal conductivity factor is up to 5300W/mK, higher than CNT and diamond, and its electron mobility exceedes under normal temperature
15000cm2/ Vs, but it is higher than CNT or silicon crystal, and resistivity about 10-6Ω cm, than copper or silver more
It is low, it is the minimum material of world resistivity.Because its resistivity is extremely low, the speed of electron transfer is exceedingly fast, therefore
It is expected to can be used to develop thinner, conductive speed electronic component or transistor of new generation faster.
At present, it is a hot fields on the ferromagnetic research of carbon-based material.In research work before,
Applicant, which once make use of, a kind of most ancient to be also most efficient method to study the local ferromagnetism of carbon-based material：
Attraction phenomenon of the ferromagnet to iron filings.We by study ferromagnetic metal atom, paramagnetic metal atom with
And diamagnetism metallic atom is in the completely different Assembling Behavior of graphene edge, proposes and prove graphene edge
With intrinsic magnetic moment.
Resistance-variable storing device is proved to that, with good size reduction potentiality, High Density Integration can be realized in future,
And its memory window is outstanding, with good data retention characteristics and anti-erasable ability.Its principle is,
Resistive material under alive excitation, can realize conversion between high-impedance state and low resistive state outside.
CN 105161617A disclose a kind of resistance-variable storing device of planar structure and preparation method thereof, described in it
Resistance-variable storing device have be formed at resistive functional layer two ends Graphene electrodes, utilize grapheme material
High mobility characteristic, realizes the low power operation of resistance-variable storing device.
CN 104681718A disclose a kind of resistive random access memory based on graphene oxide and its preparation
Method.The resistive random access memory includes grid, gate insulation layer, source electrode, drain electrode, active area, is located at
Graphene layer and memory cell between active area and source electrode and drain electrode.Memory cell include Top electrode, under
Change resistance layer between electrode and upper/lower electrode, wherein change resistance layer are graphene oxide.Wherein graphene layer
Formed for graphene oxide layer by reduction.
But above-mentioned resistance-variable storing device causes resistance-variable storing device integrated in the presence of because high energy consumption and caloric value are big
The problem of degree can not continue to improve.
The content of the invention
Resistive is caused to be deposited because high energy consumption and caloric value are big for what graphene memory in the prior art was present
The problem of reservoir integrated level can not continue to improve, the present invention has the basis of intrinsic magnetic moment in graphene edge
On there is provided a kind of memory based on graphene suspension beam structure and preparation method thereof.It is described to be based on graphene
The memory of suspension beam structure is a kind of new non-volatile random storage, and it can be with silicon-based semiconductor technique
Compatibility, with cost is low, low in energy consumption, simple in construction, storage speed fast and can High Density Integration etc. it is excellent
Point, can effectively solve the bottleneck problem of original memory development.
The essence of memory of the present invention based on graphene suspension beam structure is to be prepared by graphene-based material
Obtained one end is fixed, the free graphene overarm of the other end, can using the local magnetic of graphene edge
High resistance (i.e. graphene cantilever beam and magnetic are formed between graphene cantilever beam and magnetic second electrode to realize
The state that second electrode disconnects) and low resistance (i.e. graphene cantilever beam and the state of magnetic second electrode contact)
Two kinds of stable states, so as to realize the storage of " 0 " and " 1 ".Also, " reading ", " writing " of information
" wiping " can be realized by first electrode, second electrode and the 3rd electrode.
For up to above-mentioned purpose, the present invention is adopted the following technical scheme that：
In a first aspect, the invention provides a kind of memory based on graphene suspension beam structure, the memory
Including the overarm of matrix, first electrode, second electrode, the 3rd electrode and graphene, wherein first electrode, the
Two electrodes and the 3rd electrode are formed on matrix；Graphene one end of hanging oneself from a beam is fixed in first electrode, the other end
Vacantly；Second electrode is located at below the hanging one end of graphene overarm, the part of the 3rd electrode not with substrate contact
It is suspended on above graphene overarm and second electrode.
Wherein, although first electrode, second electrode and the 3rd electrode are fixed on ad-hoc location, but the first electricity
The syntagmatic of position and the function being each responsible for can change between pole, second electrode and the 3rd electrode
Become, be not limited in single combination of the present invention.
Graphene overarm is fixed with first electrode, graphene overarm needs to be embedded in first electrode, such one
Aspect can play electric action, on the other hand can also play fixed graphene overarm, it is hung oneself from a beam
The effect of structure.3rd electrode is not suspended on the part of substrate contact in graphene overarm and second electrode
Side, refer to a part and substrate contact for the 3rd electrode, while some vacantly be located at second electrode and
The top of graphene overarm.
In the present invention, graphene one end of hanging oneself from a beam is fixed in first electrode, and the other end is hanging, it is possible to achieve stone
High resistance (i.e. graphene cantilever beam and magnetic second electrode are formed between black alkene cantilever beam and magnetic second electrode
The state of disconnection) and two kinds of low resistance (i.e. graphene cantilever beam and the state of magnetic second electrode contact) is surely
State is determined, so as to realize the storage of " 0 " and " 1 ".
First electrode performs " reading " function of memory.
Second electrode performs " writing " function of memory.
3rd electrode performs " wiping " function of memory.
Below as currently preferred technical scheme, but the limit of the technical scheme provided not as the present invention
System, by the following technical programs, can preferably reach and realize the technical purpose and beneficial effect of the present invention
Really.
As currently preferred technical scheme, number >=1 of the graphene overarm, such as 1,2
It is individual, 3,4,5,6,7 or 8 and more than, the number of graphene overarm is not limited in
Cited numerical value, its number can be adjusted according to actual needs.Number >=1 of the graphene overarm
Refer to that memory, except using single graphene cantilever beam, can also be multiple (>=2) graphene cantilever beams
The array architecture constituted in comb shape.
As currently preferred technical scheme, the thickness of the first electrode is more than graphene and hung oneself from a beam and matrix
The distance between.
As currently preferred technical scheme, described matrix is nonmetallic materials and/or nonmetal oxide material
The good and stable material of material, as insulating properties.
Preferably, the material of described matrix is Si and/or SiO2。
Preferably, described matrix surface has insulating barrier.
Preferably, the material of the insulating barrier is SiO2、Al2O3Or HfO2In any one or at least two
Composition, combination typical case but non-limiting examples have：SiO2And Al2O3Combination, Al2O3With
HfO2Combination, SiO2And HfO2Combination, SiO2、Al2O3And HfO2Combination etc..
As currently preferred technical scheme, the first electrode and the 3rd electrode are metal electrode material.
Preferably, the metal electrode material is in Au, Ag, Cu, W, Ti, Pt, Fe, Co or Ni
Any one or at least two combination, combination typical case but non-limiting examples have：Au and Ag group
Close, Cu and W combination, Ti and Pt combination, Pt, Fe and Co combination, Co and Ni combination,
Au, Ag and Cu combination, W, Ti, Pt and Fe combination, Pt, Fe, Co and Ni combination,
Au, Ag, Cu, W and Ti combination, Au, Ag, Cu, W, Ti, Pt and Fe combination, Cu,
W, Ti, Pt, Fe, Co and Ni combination, Au, Ag, Cu, W, Ti, Pt, Fe, Co and Ni
Deng, but it is not limited to above-mentioned listed combination.
Preferably, the second electrode is ferromagnetic metal material.
Preferably, the ferromagnetic metal material is any one metal or at least two in Fe, Co or Ni
The combination of metal, the combination is typical but non-limiting examples have：Fe and Co combination, Co and Ni group
Close, Fe and Ni combination, Fe, Co and Ni combination etc..
As currently preferred technical scheme, the graphene overarm is flake graphite alkene or graphene nano
Band.
Preferably, the graphene overarm is using micromechanics stripping method, SiC thermal decomposition epitaxies growth method, chemistry
Any one method is prepared in vapour deposition process or graphite oxide reducing process.
The memory based on graphene suspension beam structure is as follows in running：
Original state, graphene overarm is not contacted with second electrode, is formed between first electrode and second electrode
Circuit be in high resistance state, be denoted as " 0 " state, the reading of information can be by applying to first electrode
One small voltage, reads memorizer information.
Then, an applied voltage is applied on the second electrode, band is not respectively for graphene overarm and second electrode
Same electric charge, graphene overarm produces certain bending in the presence of electric field force so that graphene is hung oneself from a beam and iron
Magnetic second electrode is contacted.After voltage removal, graphene is hung oneself from a beam by magnetic attraction and elastic restoring force, is led to
The flying height and length of graphene overarm are overregulated, graphene overarm can be made to keep contacting with magnetic pole
State, in stable state.Now, the circuit formed between first electrode and second electrode is in low resistance shape
State.Reading for information can read memorizer information by applying a small voltage to first electrode, its
State can be denoted as " 1 ".
Information reading process：
By adding a less external voltage between the first electrode and the second electrode (for example, external voltage can be
2~10V), by the high-impedance state of size of current decision circuitry, the reading of state " 0 " and " 1 " is realized with this
Take.
Information erasing process：
Add a suitable external voltage (for example, external voltage can be 2~10V) on the 3rd electrode so that stone
The overarm of black alkene is overcome magnetic force by enough attractions, and can be to state " 0 " from state " 1 ".
Second aspect, the invention provides the preparation method of above-mentioned memory, methods described is：On matrix
Memory is prepared by forming photoresist, etching photoresist and depositing electrode.
As currently preferred technical scheme, the mode of the formation photoresist is spin coating, spraying, ink-jet
Any one in printing or silk-screen printing or at least two combination, it is not limited to methods described.It is described
Combination is typical but non-limiting examples have：The group of spin coating and the combination of spraying, inkjet printing and silk-screen printing
Close, spin coating, spraying and the combination of inkjet printing, spin coating, spraying, the combination of inkjet printing and silk-screen printing
Deng, but it is not limited to above-mentioned listed combination.
Preferably, the photoresist is polymethyl methacrylate and/or dimethyl silicone polymer.
Preferably, the mode of the etching photoresist is e-beam direct write lithography, but not limited to this.
Preferably, the mode of the depositing electrode is electron beam evaporation or magnetron sputtering, but not limited to this.
As currently preferred technical scheme, it the described method comprises the following steps：
(1) photoresist of spin coating first on matrix, and being performed etching to the first photoresist, wherein etching is root
The position of second electrode is etched according to the shape and size of default second electrode；
(2) ferromagnetic metal material formation second electrode is deposited on the first photoresist through over etching and is removed
First photoresist；
(3) photoresist of spin coating second on matrix and second electrode, and graphene is placed in the second photoresist
On, then the photoresist of spin coating the 3rd；
(4) the 3rd photoresist of removal is etched after graphene suspension beam structure on the 3rd photoresist, then spin coating the
Four photoresists, wherein being that the shape and size hung oneself from a beam according to default graphene are carved on the 3rd photoresist
Erosion, the photoresist of spin coating the 4th is to have prepared the graphene suspension beam structure etched to protect；
(5) the second photoresist and the 4th photoresist are etched in second electrode both sides, forms step surface structure,
Deposit metal electrodes material formation first electrode and the 3rd electrode, make first electrode, the 3rd at step surface structure
It is in a plane at the top of electrode and the 4th photoresist, wherein etching the second photoresist and the 4th in second electrode both sides
Photoresist is to utilize electron beam exposure and developing technique, according to default first electrode and the shape of the 3rd electrode
The second photoresist and the 4th photoresist are etched with size, and first electrode is by one end of graphene suspension beam structure
It is coated in first electrode；
(6) light of spin coating the 5th in the plane formed at the top of first electrode, the 3rd electrode and the 4th photoresist
Photoresist, is performed etching on the 5th photoresist, the 3rd electrode of redeposited metal electrode material formation, wherein
It is to utilize direct electronic beam writing technology to be performed etching on 5th photoresist, according to the size of default 3rd electrode and
Shape etches the shape and size of the 3rd electrode on the 5th photoresist, the 3rd electrode deposited herein and step
Suddenly the 3rd electrode of deposition is linked to be an entirety in (5), and part of the 3rd electrode not with substrate contact is suspended on
On second electrode and graphene overarm；
(7) in removal step (1)~(6) spin coating photoresist, obtain memory.
In methods described, first electrode, the position of second electrode and the 3rd electrode and thickness can pass through electronics
Book direct-write photoetching, and the condition such as thickness, dispensing and developing time of photoresist are controlled and regulated and controled, but
It is not limited in a kind of this method.
As currently preferred technical scheme, the etching is e-beam direct write lithography.
Preferably, the mode of deposition ferromagnetic metal material is that electron beam evaporation or magnetic control splash in step (2)
Penetrate, but not limited to this.
Preferably, the mode of deposit metal electrodes material is electron beam evaporation in step (5) and step (6)
Or magnetron sputtering, but not limited to this.
Preferably, the thickness of first photoresist is the distance between graphene overarm and matrix.
Preferably, first photoresist, the second photoresist, the 3rd photoresist, the 4th photoresist and the 5th
The thickness of photoresist is 30~200nm, such as 30nm, 50nm, 70nm, 100nm, 130nm,
150nm, 170nm or 200nm etc., but it is equal to be not limited to other numerical value in cited numerical value, the scope
It is feasible.
Compared with prior art, the invention has the advantages that：
The essence of memory of the present invention based on graphene suspension beam structure is to be prepared by graphene-based material
Obtained one end is fixed, the free graphene overarm of the other end, can using the local magnetic of graphene edge
High resistance (i.e. graphene cantilever beam and magnetic are formed between graphene cantilever beam and magnetic second electrode to realize
The state that second electrode disconnects) and low resistance (i.e. graphene cantilever beam and the state of magnetic second electrode contact)
Two kinds of stable states, so as to realize the storage of " 0 " and " 1 ".Also, " reading ", " writing " of information
" wiping " can be realized by first electrode, second electrode and the 3rd electrode.
The memory based on graphene suspension beam structure have cost it is low, low in energy consumption, simple in construction, storage
Speed is fast, caloric value is few and can High Density Integration the advantages of, such as storage speed is up to few tens of nano-seconds, hair
Heat is only 10-16~10-19J, can effectively solve the bottleneck problem of original memory development.
Brief description of the drawings
Fig. 1 is side view of the memory of graphene suspension beam structure in the embodiment of the present invention 4 in " 0 " state
Figure；
Fig. 2 is solid of the memory of graphene suspension beam structure in the embodiment of the present invention 4 in " 0 " state
Figure；
Fig. 3 is vertical view of the memory of graphene suspension beam structure in the embodiment of the present invention 4 in " 0 " state
Figure；
Fig. 4 is side view of the memory of graphene suspension beam structure in the embodiment of the present invention 4 in one state
Figure；
Fig. 5 is the technological process that the memory based on graphene suspension beam structure is prepared in the embodiment of the present invention 5
Figure；
Fig. 6 (a)-Fig. 6 (l) is to prepare the memory based on graphene suspension beam structure in the embodiment of the present invention 5
Method in each section of structure；
Wherein, 1- first electrodes, 2- second electrodes, the electrodes of 3- the 3rd, the overarm of 4- graphenes, 5- matrixes, 6-
Insulating barrier, the photoresists of 7- first, the photoresists of 8- second, the photoresists of 9- the 3rd, the photoresists of 10- the 4th, 11-
Five photoresists.
Embodiment
Below in conjunction with several specific embodiments, exemplary illustration and help further understand the present invention, but real
A detail is applied merely to illustrating the present invention, whole technical schemes under present inventive concept are not represented, because
This should not be construed as the technical scheme total to the present invention and limits, and some are in technical staff, without departing from invention
The unsubstantiality of design is changed, for example simply changed with the technical characteristic with same or similar technique effect or
Replace, belong to the scope of the present invention.
Specific embodiment of the invention part provides a kind of memory based on graphene suspension beam structure, described to deposit
Reservoir includes matrix 5, first electrode 1, second electrode 2, the 3rd electrode 3 and graphene overarm 4, wherein
First electrode 1, the electrode 3 of second electrode 2 and the 3rd are formed on matrix 5；4 one end of graphene overarm are fixed
In in first electrode 1, the other end is hanging；Second electrode 2 is located at below the hanging one end of graphene overarm 4,
The part that 3rd electrode 3 is not contacted with matrix 5 is suspended on graphene overarm 4 and the top of second electrode 2.
Wherein, number >=1 of the graphene overarm 4.
The thickness of the first electrode 1 is more than the distance between graphene overarm 4 and matrix 5.
Described matrix 5 is nonmetallic materials and/or nonmetal oxide material, further can for Si and/or
SiO2。
The surface of described matrix 5 has insulating barrier 6, and the material of the insulating barrier 6 is SiO2、Al2O3Or HfO2
In any one or at least two composition.
The electrode 3 of first electrode 1 and the 3rd be metal electrode material, further can for Au, Ag, Cu,
Any one in W, Ti, Pt, Fe, Co or Ni or at least two combination.
The second electrode 2 is ferromagnetic metal material, can be further any one in Fe, Co or Ni
The combination of metal or at least two metals.
The graphene overarm is flake graphite alkene or graphene nanobelt, and the graphene overarm uses microcomputer
It is any one in tool stripping method, SiC thermal decomposition epitaxies growth method, chemical vapour deposition technique or graphite oxide reducing process
The method of kind is prepared.
Embodiment 1：
A kind of memory based on graphene suspension beam structure is present embodiments provided, the memory includes matrix
5th, first electrode 1, second electrode 2, the 3rd electrode 3 and graphene overarm 4, wherein first electrode 1, the
Two electrodes 2 and the 3rd electrode 3 are formed on matrix 5；First electrode 1 is fixed in 4 one end of graphene overarm
On, the other end is hanging；Second electrode 2 is located at below the hanging one end of graphene overarm 4, and the 3rd electrode 3 is not
The part contacted with matrix 5 is suspended on graphene overarm 4 and the top of second electrode 2.
Wherein, the number of graphene overarm 4 is 1, is flake graphite alkene；The thickness of first electrode 1 is big
In the distance between graphene overarm 4 and matrix 5.
Matrix 5 is Si and SiO2Composition.
The surface of matrix 5 has insulating barrier 6, and the material of the insulating barrier 6 is SiO2。
The electrode 3 of first electrode 1 and the 3rd is Ag and Cu alloys.
Second electrode 2 is ferromagnetism Ni metals.
Embodiment 2：
A kind of memory based on graphene suspension beam structure is present embodiments provided, except graphene overarm 4 is 3
The individual array architecture constituted in comb shape, wherein the overarm of single graphene is graphene nanobelt, matrix 5
For SiO2, the material of the insulating barrier 6 on the surface of matrix 5 is SiO2And Al2O3Composition, first electrode 1
With the 3rd electrode 3 be Cu, W and Ti alloy, second electrode 2 for Fe, Co and Ni alloy outside,
Other structures are in the same manner as in Example 1.
Embodiment 3：
A kind of memory based on graphene suspension beam structure is present embodiments provided, except graphene overarm 4 is 5
The individual array architecture constituted in comb shape, matrix 5 is Si, and the material of the insulating barrier 6 on the surface of matrix 5 is
SiO2、Al2O3And HfO2Composition, the electrode 3 of first electrode 1 and the 3rd be Fe, Co and Ni conjunction
Gold, second electrode 2 is that other structures are in the same manner as in Example 1 outside Fe metals.
Embodiment 4：
Present embodiments provide the operation of the memory based on graphene suspension beam structure in above-described embodiment 1-3
Journey：
In original state, graphene overarm 4 is not contacted with second electrode 2, as shown in Figure 1, Figure 2 with Fig. 3 institutes
Show.Now, because graphene overarm 4 and second electrode 2 are not in contact with first electrode 1 and second electrode 2
Between the circuit that is formed be in high resistance state, this state can be denoted as " 0 " state.The reading of information can lead to
Cross and apply a small voltage (such as 2~10V) to first electrode 1, read memorizer information.
Then, an applied voltage (such as 2~10V), graphene overarm 4 are applied in second electrode 2
With second electrode 2 respectively with different electric charges, graphene overarm 4 produces necessarily curved in the presence of electric field force
It is bent so that graphene overarm 4 is contacted with ferromagnetic second electrode 2, as shown in Figure 4.After voltage removal,
Graphene overarm 4 is by magnetic attraction and elastic restoring force, by the flying height for adjusting graphene overarm 4
With length, graphene overarm 4 can be made to keep contact condition with ferromagnetic second electrode 2, in stable state.
Now, the circuit formed between first electrode 1 and second electrode 2 is in low resistance state.The reading of information can
By applying voltage (such as 2~10V) one small to first electrode 1, to read memorizer information, its
State can be denoted as " 1 ".
Information reading process：
By adding a less external voltage (such as 2~10V) between first electrode 1 and second electrode 2,
By the high-impedance state of size of current decision circuitry, the reading of state " 0 " and " 1 " is realized with this.
Information erasing process：
Add a suitable external voltage (such as 2~10V) on the 3rd electrode 3 so that graphene overarm 4
By enough attractions, magnetic force is overcome, and can be to state " 0 " from state " 1 ".
Embodiment 5：
The preparation method of the memory based on graphene suspension beam structure in embodiment 1 is present embodiments provided, such as
Shown in Fig. 5, comprise the following steps that：
S1：As shown in Fig. 6 (a), the insulating i substrates of matrix 5 are cleaned using semiconductor standard cleaning；
The first thick spin coating 200nm photoresist 7 on the material of matrix 5 with insulating barrier 6；
S2：As shown in Fig. 6 (b), etched using e-beam direct write lithography technology on the first photoresist 7
Shape and size required by second electrode 2, then deposited by electron beam evaporation method deposit 30nm thickness metal
Ni obtains second electrode 2, and removes the first photoresist 7；
S3：As shown in Fig. 6 (c), the second thick spin coating 80nm photoetching on matrix 5 and second electrode 2
Glue 8, and graphene 12 is placed on the second photoresist 8；
S4：As shown in Fig. 6 (d), spin coating 30nm is thick on the second photoresist 8 and graphene 12 the 3rd
Photoresist 9；
S5：Such as Fig. 6 (e), the shape and size hung oneself from a beam on the 3rd photoresist 9 according to default graphene
Perform etching, produce preset shape and the graphene of size, then remove the 3rd photoresist 9；
S6：As shown in Fig. 6 (f), the glue of the 4th photoetching 10 protection thick spin coating 80nm has prepared etching
Graphene 4 structures of overarm gone out；
S7：As shown in Fig. 6 (j), using electron beam exposure and developing technique, according to default first electrode
The second photoresist 8 and the 4th photoresist 10 are etched with the shape and size of the 3rd electrode, step surface knot is formed
Structure；
S8：As shown in Fig. 6 (h), the deposit metal electrodes material formation first electrode 1 at step surface structure
With the 3rd electrode 3, it is in a plane to make first electrode 1, the 3rd electrode 3 and the top of the 4th photoresist 10, and
And retain the second photoresist 8 and the 4th photoresist 10；
S9：As shown in Fig. 6 (i), in first electrode 1, the 3rd electrode 3 and the top institute of the 4th photoresist 10
The 5th thick spin coating 80nm photoresist 11 in the plane of formation；
S10：As shown in Fig. 6 (g), using direct electronic beam writing technology, according to the chi of default 3rd electrode 3
Very little and shape etches the shape and size of the 3rd electrode 3 on the 5th photoresist 11；
S11：As shown in Fig. 6 (k), deposit metal electrodes material the 3rd electrode 3 of formation, the deposited herein
Three electrodes 3 and the 3rd electrode 3 deposited in step S8 are linked to be an entirety, the 3rd electrode 3 not with matrix 5
The part of contact is suspended on second electrode 1 and graphene overarm 4；
S12：As shown in Fig. 6 (l), remaining photoresist is removed, memory is obtained, obtain mask plate protection
Under the resistance-variable storing device of graphene suspension beam structure that is fabricated to.
The storage speed of the memory is up to few tens of nano-seconds, and caloric value is 10-16~10-19J, and can be highly dense
Degree is integrated.
The preparation method of the memory based on graphene suspension beam structure in embodiment 2 and embodiment 3 and implementation
The methods described of example 5 is identical.
Integrated embodiment 1-5 result can be seen that the storage of the present invention based on graphene suspension beam structure
The essence of device is to be fixed by one end that graphene-based material is prepared, and the free graphene of the other end hangs
Beam, utilizes the local magnetic of graphene edge, it is possible to achieve between graphene cantilever beam and magnetic second electrode
Form high resistance (i.e. graphene cantilever beam and the state of magnetic second electrode disconnection) and low resistance (i.e. graphite
Alkene cantilever beam and the state of magnetic second electrode contact) two kinds of stable states, so as to realize " 0 " and " 1 "
Storage.Also, " reading ", " writing " and " wiping " of information can pass through first electrode, second electrode
Realized with the 3rd electrode.
The memory based on graphene suspension beam structure have cost it is low, low in energy consumption, simple in construction, storage
Speed is fast, caloric value is few and can High Density Integration the advantages of, such as storage speed up to few tens of nano-seconds, hair
Heat is only 10-16~10-19J, can effectively solve the bottleneck problem of original memory development.
Applicant states that the present invention illustrates the method detailed of the present invention, but the present invention by above-described embodiment
Above-mentioned method detailed is not limited to, that is, does not mean that the present invention has to rely on above-mentioned method detailed ability real
Apply.Person of ordinary skill in the field is it will be clearly understood that any improvement in the present invention, to product of the present invention
The equivalence replacement of each raw material and the addition of auxiliary element, the selection of concrete mode etc., all fall within the guarantor of the present invention
Within the scope of protecting scope and being open.
Claims (10)
1. a kind of memory based on graphene suspension beam structure, it is characterised in that the memory includes base
Body (5), first electrode (1), second electrode (2), the 3rd electrode (3) and graphene overarm (4),
Wherein first electrode (1), second electrode (2) and the 3rd electrode (3) are formed on matrix (5)；Stone
Black alkene overarm (4) one end is fixed in first electrode (1), and the other end is hanging；Second electrode (2) is located at
Below the hanging one end of graphene overarm (4), the part that the 3rd electrode (3) is not contacted with matrix (5) is hanging
Above graphene overarm (4) and second electrode (2).
2. memory according to claim 1, it is characterised in that the graphene overarm (4)
Number >=1.
3. memory according to claim 1 or 2, it is characterised in that the first electrode (1)
Thickness be more than the distance between graphene overarm (4) and matrix (5).
4. the memory according to claim any one of 1-3, it is characterised in that described matrix (5)
For nonmetallic materials and/or nonmetal oxide material；
Preferably, the material of described matrix (5) is Si and/or SiO2；
Preferably, described matrix (5) surface has insulating barrier (6)；
Preferably, the material of the insulating barrier (6) is SiO2、Al2O3Or HfO2In any one or at least
Two kinds of composition.
5. the memory according to claim any one of 1-4, it is characterised in that the first electrode
(1) and the 3rd electrode (3) be metal electrode material；
Preferably, the metal electrode material is in Au, Ag, Cu, W, Ti, Pt, Fe, Co or Ni
Any one or at least two combination；
Preferably, the second electrode (2) is ferromagnetic metal material；
Preferably, the ferromagnetic metal material is any one metal or at least two in Fe, Co or Ni
The combination of metal.
6. the memory according to claim any one of 1-5, it is characterised in that the graphene overarm
For flake graphite alkene or graphene nanobelt；
Preferably, the graphene overarm is using micromechanics stripping method, SiC thermal decomposition epitaxies growth method, chemistry
Any one method is prepared in vapour deposition process or graphite oxide reducing process.
7. the preparation method of the memory according to claim any one of 1-6, it is characterised in that described
Method is：On matrix (5) memory is prepared by forming photoresist, etching photoresist and depositing electrode.
8. preparation method according to claim 7, it is characterised in that the side of the formation photoresist
Formula is any one in spin coating, spraying, inkjet printing or silk-screen printing or at least two combination；
Preferably, the photoresist is polymethyl methacrylate and/or dimethyl silicone polymer；
Preferably, the mode of the etching photoresist is e-beam direct write lithography；
Preferably, the mode of the depositing electrode is electron beam evaporation or magnetron sputtering.
9. the preparation method according to claim 7 or 8, it is characterised in that methods described includes following
Step：
(1) photoresist of spin coating first (7) on matrix (5), and being carved to the first photoresist (7)
Erosion；
(2) ferromagnetic metal material formation second electrode is deposited on the first photoresist (7) through over etching
(2) and remove the first photoresist (7)；
(3) photoresist of spin coating second (8) on matrix (5) and second electrode (2), and by graphene
(12) it is placed on the second photoresist (8), then the photoresist (9) of spin coating the 3rd；
(4) the 3rd photoresist is removed after graphene overarm (4) structure is etched on the 3rd photoresist (9)
, then the photoresist (10) of spin coating the 4th (9)；
(5) the second photoresist (8) and the 4th photoresist (10), shape are etched in second electrode (2) both sides
Into step surface structure, deposit metal electrodes material formation first electrode (1) and the 3rd electricity at step surface structure
Pole (3), makes to be in a plane at the top of first electrode (1), the 3rd electrode (3) and the 4th photoresist (10)；
(6) formed at the top of first electrode (1), the 3rd electrode (3) and the 4th photoresist (10)
The photoresist (11) of spin coating the 5th in plane, is performed etching, redeposited metal on the 5th photoresist (11)
Electrode material the 3rd electrode (3) of formation；
(7) in removal step (1)~(6) spin coating photoresist, obtain memory.
10. preparation method according to claim 9, it is characterised in that the etching is that electron beam is straight
Write photoetching；
Preferably, the mode of deposition ferromagnetic metal material is that electron beam evaporation or magnetic control splash in step (2)
Penetrate；
Preferably, the mode of deposit metal electrodes material is electron beam evaporation in step (5) and step (6)
Or magnetron sputtering；
Preferably, the thickness of first photoresist (7) is between graphene overarm (4) and matrix (5)
Distance；
Preferably, first photoresist (7), the second photoresist (8), the 3rd photoresist (9),
The thickness of four photoresists (10) and the 5th photoresist (11) is 30~200nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110737047A (en) * | 2019-10-30 | 2020-01-31 | 北京交通大学 | read-write controllable silicon-based integrated optical buffer |
| CN113327924A (en) * | 2021-05-25 | 2021-08-31 | 北京京东方技术开发有限公司 | Semiconductor device, display substrate and display device |
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| US20090116277A1 (en) * | 2004-04-06 | 2009-05-07 | Bao Tran | Nano-electronic memory array |
| CN104332557A (en) * | 2014-09-03 | 2015-02-04 | 国家纳米科学中心 | Nonvolatile memory based on single-wall carbon tube and preparation method thereof |
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2016
- 2016-01-26 CN CN201610051372.6A patent/CN106997925A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090116277A1 (en) * | 2004-04-06 | 2009-05-07 | Bao Tran | Nano-electronic memory array |
| CN104332557A (en) * | 2014-09-03 | 2015-02-04 | 国家纳米科学中心 | Nonvolatile memory based on single-wall carbon tube and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110737047A (en) * | 2019-10-30 | 2020-01-31 | 北京交通大学 | read-write controllable silicon-based integrated optical buffer |
| CN110737047B (en) * | 2019-10-30 | 2020-12-04 | 北京交通大学 | Read-write controllable silicon-based integrated optical buffer |
| CN113327924A (en) * | 2021-05-25 | 2021-08-31 | 北京京东方技术开发有限公司 | Semiconductor device, display substrate and display device |
| CN113327924B (en) * | 2021-05-25 | 2024-04-12 | 北京京东方技术开发有限公司 | Semiconductor device, display substrate and display device |
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