CN110737047A - read-write controllable silicon-based integrated optical buffer - Google Patents

read-write controllable silicon-based integrated optical buffer Download PDF

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CN110737047A
CN110737047A CN201911043032.9A CN201911043032A CN110737047A CN 110737047 A CN110737047 A CN 110737047A CN 201911043032 A CN201911043032 A CN 201911043032A CN 110737047 A CN110737047 A CN 110737047A
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silicon
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graphene layer
rectangular waveguide
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CN110737047B (en
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王慧莹
王智
李航天
崔粲
傅子玲
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Beijing Jiaotong University
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect
    • G02F1/093—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on magneto-optical elements, e.g. exhibiting Faraday effect used as non-reciprocal devices, e.g. optical isolators, circulators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12038—Glass (SiO2 based materials)

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Abstract

The invention discloses read-write controllable silicon-based integrated optical buffers, which comprise a non-reciprocal silicon-based rectangular waveguide and a graphene layer which are sequentially arranged from left to right, wherein the graphene layer is integrated on the right output end surface of the non-reciprocal silicon-based rectangular waveguide to form a read/write control end surface, the read/write control end surface regulates and controls the transmission coefficient of graphene in a voltage applying mode, and determines whether one-way transmission signal light entering the non-reciprocal silicon-based rectangular waveguide can penetrate through the graphene layer to realize the read/write control of the optical buffers.

Description

read-write controllable silicon-based integrated optical buffer
Technical Field
The invention relates to the technical field of photoelectron integration, in particular to read-write controllable silicon-based integrated optical buffers.
Background
The scheduling and control of data in the optical quantum computing technology are the basis of the optical quantum computer, and various registers, memories and buffers for accessing data are filled in the optical quantum computer, whether in a CPU or a complete machine, after optical interconnection is adopted between chips, the storage of data can be carried out in an optical domain without carrying out multiple times of photoelectric optical conversion, and is favorable from the aspects of increasing the speed, improving the signal quality, reducing the energy consumption and the like.
In all studies, optical buffers of various structures have their respective advantages and challenges, that is, slow optical buffers based on electro-induced transparency (EIT) are expensive, and the system structure and manufacturing process are complicated, thus difficult to implement, that is, the optical buffers based on fiber delay lines can provide large delay, but the resolution is limited by the tuning step, and the buffers are large in size, and not easy to integrate into micro-systems, that is, the optical buffers based on photonic crystal slow optical effects have the same difficulty as Stimulated Brillouin Scattering (SBS) slow optical effects, the dynamic range of delay time is small, and the total delay time is less than nanosecond, that the optical micro-ring resonator is small-size, compact optical devices, which is comparable to the optical buffers of photonic crystal structure, but slightly less than the optical buffers of photonic crystal structure in terms of optical performance, tunability, flexibility, and reproducibility, and the size and dispersion of the multi-ring optical buffer are not simultaneously reduced, and that the optical buffers adopting the cascade structure of optical switches and waveguide lines achieve large-scale adjustment of optical delay amounts, but are more accurate than the optical buffers of , that they are not limited by the storage time of the fixed-bandwidth of the resonant cavity, that is not possible.
Although there are international research units for researching nonreciprocal waveguides, most of the research is focused on realizing nonreciprocal devices such as an optical isolator, an optical circulator and the like by utilizing the nonreciprocal waveguides, and no relevant research report of applying the nonreciprocal devices to an optical buffer exists at present.
Conventional all-optical buffers based on semiconductor SOA amplifiers are prone to noise accumulation due to the repeated passage of optical signals through the optical amplifiers, and the control techniques are relatively complex.
Disclosure of Invention
The invention aims to provide read-write controllable silicon-based integrated optical buffers which are simple in structure, convenient and controllable, and can realize caching and read-write control of C-waveband signal light in optical communication.
In order to achieve the purpose, the invention provides read-write controllable silicon-based integrated optical buffers, which comprise a non-reciprocal silicon-based rectangular waveguide and a graphene layer which are arranged in sequence from left to right, wherein the graphene layer is integrated on the right output end face of the non-reciprocal silicon-based rectangular waveguide to form a read/write control end face;
the read/write control end face regulates and controls the transmission coefficient of the graphene in a voltage applying mode, determines whether unidirectional transmission signal light entering the non-reciprocal silicon-based rectangular waveguide can penetrate through the graphene layer, and realizes the read/write control of the optical buffer.
Preferably, when a lower voltage is applied to the graphene layer, the graphene transmission coefficient is smaller, and the unidirectional transmission signal light entering the nonreciprocal silicon-based rectangular waveguide is reflected on the surface of the graphene layer to carry out amplitude accumulation and realize writing control on the optical buffer;
when a higher voltage is applied to the graphene layer, the graphene transmission coefficient is increased, and the optical pulse signals stored in the nonreciprocal silicon-based rectangular waveguide penetrate through the graphene layer to realize the control of reading of the optical buffer.
Preferably, the nonreciprocal silicon-based rectangular waveguide comprises a metal nano layer, a magneto-optical material layer, a silicon semiconductor layer and a metal nano layer which are sequentially overlapped from bottom to top.
Preferably, the size of the nonreciprocal silicon-based rectangular waveguide is in the nanometer order.
Preferably, the metal nanolayer is an Ag metal nanolayer.
Preferably, the magneto-optical material layer is a Ce: YIG layer.
Preferably, the magneto-optical material layer breaks the symmetry of dielectric constant under the action of an external magnetic field and under the condition of wavelength of a C waveband for optical communication, and generates the gyroelectric anisotropy, so that light has the property of unidirectional transmission.
Preferably, the non-reciprocal frequency interval is modulated by the faraday rotation coefficient of the layer of magneto-optical material, which is proportional to the size of the non-reciprocal frequency interval.
Preferably, the wavelength range of the optical communication C-band is 1530-1565 nm.
Preferably, the chemical potential, the electrical conductivity and the dielectric constant of the graphene layer are adjusted by regulating and controlling an external voltage loaded on the graphene layer, so that the graphene layer shows a metal property, and the function of the optical switch is realized.
Preferably, the loss of the graphene layer surface waves is reduced by increasing the chemical potential of the graphene layer.
Compared with the prior art, the read-write controllable silicon-based integrated optical buffer provided by the invention has the following beneficial effects:
1. the magneto-optical material layer adopted by the invention can break the limit of time-bandwidth limit under the action of an external magnetic field, and the bandwidth interval is adjustable, and the magneto-optical material layer can also work in an optical communication C wave band.
2. The output control end face of the nonreciprocal silicon-based rectangular waveguide adopts a read-write control scheme of a graphene material, so that the operation of conveniently writing and reading the optical buffer by signal light with adjustability and low loss can be realized.
Drawings
The drawings used in the present application will be briefly described below, and it should be apparent that they are merely illustrative of the concepts of the present invention.
FIG. 1 is a schematic diagram of read-write controllable silicon-based integrated optical buffers according to the present invention;
FIG. 2 is a dispersion plot of a nonreciprocal silicon-based rectangular waveguide;
FIG. 3 is a group velocity diagram of a unidirectional transmission region of a nonreciprocal silicon-based rectangular waveguide;
FIG. 4 is a graph of conductivity versus chemical potential of graphene layers at 1550nm for optical communications;
fig. 5 is a graph of dielectric constant of graphene layers as a function of chemical potential at 1550nm band for optical communication.
Summary of reference numerals:
1. metal nano layer 2, magneto-optical material layer 3, silicon semiconductor layer
4. Metal nanolayer 5, graphene layer
Detailed Description
Hereinafter, an embodiment of read-write controllable silicon-based integrated optical buffer according to the present invention will be described with reference to the drawings.
The embodiments described herein are specific embodiments of the present invention, are intended to be illustrative and exemplary in nature, and are not to be construed as limiting the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include technical solutions which employ any obvious replacement or modification of the embodiments described herein.
It should be noted that for the purpose of clearly showing the structure of the various components of the embodiments of the present invention, the drawings are not drawn to the same scale as .
Specific embodiments of the present invention are explained below with reference to fig. 1 to 5.
As shown in FIG. 1, the invention provides read-write controllable silicon-based integrated optical buffers, which include a non-reciprocal silicon-based rectangular waveguide and a graphene layer 5 arranged in sequence from left to right, wherein the graphene layer 5 is integrated on the right output end face of the non-reciprocal silicon-based rectangular waveguide to form a read/write control end face, the read/write control end face regulates and controls the graphene transmission coefficient by applying voltage, determines whether the unidirectional transmission signal light entering the non-reciprocal silicon-based rectangular waveguide can penetrate through the graphene layer 5, and realizes the control of the read/write of the optical buffer.
In the step embodiment of the invention, the nonreciprocal silicon-based rectangular waveguide comprises a metal nanolayer 1, a magneto-optical material layer 2, a silicon semiconductor layer 3 and a metal nanolayer 4 which are sequentially stacked from bottom to top, preferably, the nonreciprocal silicon-based rectangular waveguide has a nanometer size, the metal nanolayers 1 and 4 are Ag metal nanolayers, and the magneto-optical material layer 2 is a Ce: YIG layer.
The metal nanolayers 1, 4 of the present invention are Ag metal nanolayers because Ag metal has lower loss than other metals.
The magneto-optical material layer 2 is a Ce-YIG layer. Under the action of an external magnetic field, the magneto-optical material layer 2(Ce: YIG layer) can break the symmetry of dielectric constant under the wavelength condition of an optical communication C waveband, generate the rotary electric anisotropy, namely break the Lorentz mutual anisotropy, realize the exceeding of the time-bandwidth limit and enable light to have the property of unidirectional transmission. Wherein, the wavelength range of the optical communication C wave band is 1530-1565 nm. The dielectric constant of the magneto-optical material is expressed as:
Figure BDA0002253377940000061
the invention regulates and controls the non-reciprocal frequency interval by utilizing the Faraday optical rotation coefficient of the magneto-optical material layer 2, and the Faraday optical rotation coefficient is in direct proportion to the size of the non-reciprocal frequency interval. In order to calculate the nonreciprocal frequency interval of the optical buffer, the dispersion curve of the nonreciprocal silicon-based rectangular waveguide structure shown in fig. 2 can be obtained by performing calculation through a dispersion equation, where the dispersion equation is:
Figure BDA0002253377940000062
wherein, in the dispersion equation: k is a propagation constant, in the silicon semiconductor layerk0Omega/c is the wave number in vacuum, and the relative dielectric constant of silicon is epsilonSiThe thickness of the silicon semiconductor layer 3 is d; in layers of magneto-optical material
Figure BDA0002253377940000064
The dielectric constant of the magneto-optical material is the Fock dielectric constant; overcladding in a non-reciprocal silicon-based rectangular waveguide
Figure BDA0002253377940000065
εmIs the dielectric constant of the outer layer material and t is the time. Due to the damage to the Lorentz reciprocity, the dispersion curve is asymmetric with respect to the wave vector k, complete unidirectional transmission can be realized in an asymmetric frequency region (between two horizontal dotted lines in the figure), and the nonreciprocal silicon-based rectangular waveguide shows nonreciprocity. Wherein the size of the Faraday rotation coefficient determines the size of the nonreciprocal frequency interval. Therefore, the nonreciprocal silicon-based rectangular waveguide can break the limit of time-bandwidth limit under the action of an external magnetic field, and the maximum nonreciprocal frequency interval can reach 6.88 multiplied by 1013rad/s, over which signal light can be transmitted unidirectionally. Therefore, signal light is injected into the nonreciprocal silicon-based rectangular waveguide, and nonreciprocal unidirectional transmission can be realized under the action of an external magnetic field.
For the nonreciprocal silicon-based rectangular waveguide, the slope of the dispersion curve corresponds to the normalized propagation velocity v in the nonreciprocal silicon-based rectangular waveguidegAnd c, the ratio of the total weight to the total weight of the product. In order to calculate the buffer performance of the optical buffer, a dispersion curve is obtained by using a dispersion equation and combining an electromagnetic wave group velocity formula
Figure BDA0002253377940000071
The caching performance of the nonreciprocal silicon-based rectangular waveguide shown in fig. 3 can be obtained through calculation, and fig. 3 calculates different Faraday optical rotation coefficients thetafThe nonreciprocal silicon-based rectangular waveguide has a group velocity of and an angular frequency of omega/omegapSum normalized propagation constant k/kpIt can be seen that the group velocity slowing phenomenon occurs regardless of whether ω (dotted line) increases or k (solid line) increases, and when the faraday rotation coefficient is 57deg/um, the slow light effect is more significant, and the minimum transmission velocity can reach 1.25 × 10-4c。
The read/write control end surface of the nonreciprocal silicon-based rectangular waveguide consists of a graphene layer 5 integrated on the end surface of the nonreciprocal silicon-based rectangular waveguide. By regulating and controlling external voltage loaded on the graphene layer 5, adjusting the chemical potential of the graphene layer 5, and changing the conductivity and the dielectric constant, the graphene layer 5 shows special metal properties, and the function of an optical switch is realized; and the loss of surface waves can be reduced by increasing the chemical potential of the graphene layer.
The surface conductivity can be calculated by the following kuber formula:
Figure BDA0002253377940000072
wherein e represents the electron charge, ε represents the energy,
Figure BDA0002253377940000073
for a reduced Planck constant, ω denotes the angular frequency, a Fermi-Dirac distribution of electrons, T is the temperature, μcTo the permeability (which can be changed by changing the doping and bias voltage), Γ is the relaxation time. Surface dielectric constant of graphene layer 5:
Figure BDA0002253377940000081
where Δ is the thickness of the single layer graphene. Taking fig. 4 and 5 as an example, in order to obtain a graph of the conductivity of the graphene layer 5 with the change of the chemical potential calculated according to the formula under the 1550nm wavelength condition of optical communication, the real part of the dielectric constant of the graphene layer 5 hardly changes between 0eV and 0.4eV, and then the real part of the dielectric constant decreases with the increase of the chemical potential; the imaginary part of the dielectric constant increases with the increase of the chemical potential before 0.4eV and then decreases, and it is noted that the interval of decrease of the real part of the dielectric constant of the graphene layer 5 is from positive to negative, indicating that the graphene layer 5 starts to shift from the property of the medium to the property of the metal. In which the absolute value of the dielectric constant of the graphene layer 5 is the smallest and almost 0 at a chemical potential of approximately 0.515eV, this particular point becomes the enz (epsilon near zero) point, and electromagnetic wave energy passes through the graphene layer 5 almost without loss.
Therefore, the invention can determine whether the unidirectional transmission signal light entering the nonreciprocal silicon-based rectangular waveguide can penetrate through the graphene layer 5 by utilizing the regulation and control of the transmission coefficient of the graphene layer 5, thereby realizing the control of reading/writing of the optical buffer. When signal light is transmitted to the interface of the nonreciprocal silicon-based rectangular waveguide and the graphene layer 5, when lower voltage is loaded on the graphene layer 5, the graphene transmission coefficient is lower, and the one-way transmission signal light entering the nonreciprocal silicon-based rectangular waveguide is reflected on the surface of the graphene to accumulate amplitude and control writing of the optical buffer. When a higher voltage is applied to the graphene layer 5, the optical pulse signals stored in the nonreciprocal silicon-based rectangular waveguide can penetrate through the graphene, so that the reading of the optical buffer is controlled.
It should be noted that the features of the above embodiments can be modified and combined by those skilled in the art without departing from the spirit of the present invention, and therefore, the present invention is not limited to the above embodiments, and the above disclosed features are not limited to the disclosed combination with other features, and other combinations between the features can be made by those skilled in the art according to the purpose of the present invention.

Claims (10)

  1. The read-write controllable silicon-based integrated optical buffer is characterized by comprising a non-reciprocal silicon-based rectangular waveguide and a graphene layer which are sequentially arranged from left to right, wherein the graphene layer is integrated on the right output end face of the non-reciprocal silicon-based rectangular waveguide to form a read/write control end face;
    the read/write control end face regulates and controls the transmission coefficient of the graphene in a voltage applying mode, determines whether unidirectional transmission signal light entering the non-reciprocal silicon-based rectangular waveguide can penetrate through the graphene layer, and realizes the read/write control of the optical buffer.
  2. 2. The kinds of silicon-based integrated optical buffers with controllable read-write according to claim 1, wherein when a lower voltage is applied to the graphene layer, the graphene has a smaller transmission coefficient, and the unidirectional transmission signal light entering the nonreciprocal silicon-based rectangular waveguide is reflected on the surface of the graphene layer to accumulate the amplitude and control the optical buffer for writing;
    when a higher voltage is applied to the graphene layer, the graphene transmission coefficient is increased, and the optical pulse signals stored in the nonreciprocal silicon-based rectangular waveguide penetrate through the graphene layer to realize the control of reading of the optical buffer.
  3. 3. The type silicon-based integrated optical buffer of claim 1, wherein the nonreciprocal silicon-based rectangular waveguide comprises a metal nanolayer, a magneto-optical material layer, a silicon semiconductor layer and a metal nanolayer sequentially stacked from bottom to top.
  4. 4. The type silicon-based integrated optical buffer of claim 1, wherein the nonreciprocal silicon-based rectangular waveguide has a dimension in the order of nanometers.
  5. 5. The type Si-based integrated optical buffer of claim 3, wherein the metal nanolayer is an Ag metal nanolayer.
  6. 6. The Si-based integrated optical buffer of claim 3, wherein the magneto-optical material layer is Ce: YIG layer.
  7. 7. The Si-based integrated optical buffer of claim 6, wherein the magneto-optical material layer breaks the symmetry of dielectric constant under the action of external magnetic field and at the wavelength of C-band in optical communication to generate electro-rotation anisotropy, so that the light has the property of unidirectional transmission.
  8. 8. The Si-based integrated optical buffer of claim 6, wherein the Faraday rotation coefficient of the magneto-optical material layer is used to control the non-reciprocal frequency interval, and the Faraday rotation coefficient is proportional to the size of the non-reciprocal frequency interval.
  9. 9. The type silicon-based integrated optical buffer of claim 7, wherein the wavelength range of the C-band of optical communication is 1530-1565 nm.
  10. 10. The kinds of silicon-based integrated optical buffer of claim 1, wherein the graphene layer exhibits metallic properties and functions as an optical switch by adjusting the external voltage applied to the graphene layer to adjust the chemical potential, conductivity and dielectric constant of the graphene layer.
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Cited By (1)

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CN115061236A (en) * 2022-03-24 2022-09-16 北京交通大学 Read-write controllable silicon-based integrated optical buffer of Sagnac coupling micro-ring array structure

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CN106997925A (en) * 2016-01-26 2017-08-01 国家纳米科学中心 A kind of memory based on graphene suspension beam structure and preparation method thereof
CN109298583A (en) * 2018-12-06 2019-02-01 湖北科技学院 One kind being based on the bistable all-optical switch of graphene optical and optical memory

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US20090214218A1 (en) * 2008-02-22 2009-08-27 Oki Electric Industry Co., Ltd. Optical buffer device
CN105393477A (en) * 2014-06-13 2016-03-09 华为技术有限公司 Optical buffer and optical buffering method
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CN115061236B (en) * 2022-03-24 2023-10-20 北京交通大学 Controllable silicon-based integrated optical buffer of reading and writing of Sagnac coupling micro-ring array structure

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