CN109285804B

CN109285804B - Wafer vertical stability calibration system and method for calibrating wafer vertical stability

Info

Publication number: CN109285804B
Application number: CN201710602295.3A
Authority: CN
Inventors: 夏连山; 张连伯; 汪志宇; 唐强
Original assignee: Semiconductor Manufacturing International Shanghai Corp; Semiconductor Manufacturing International Beijing Corp
Current assignee: Semiconductor Manufacturing International Shanghai Corp; Semiconductor Manufacturing International Beijing Corp
Priority date: 2017-07-21
Filing date: 2017-07-21
Publication date: 2020-12-01
Anticipated expiration: 2037-07-21
Also published as: CN109285804A

Abstract

The invention provides a system and a method for calibrating vertical stability of a wafer, wherein the system comprises: a wafer to be calibrated; the supporting device is used for placing the wafer to be calibrated; the dynamic balance system is arranged on two sides of the wafer to be calibrated and is opposite to the surface of the wafer to be calibrated, the dynamic balance system comprises a plurality of nozzles with different positions, and the nozzles can spray liquid or gas to the surface of the wafer to be calibrated so as to calibrate the position of the wafer to be calibrated and keep the wafer to be calibrated in a vertical state; and the gripping device is used for gripping the wafer to be calibrated to move from one position to another position. The system of the invention avoids the problems of chip falling, fragment, scratch and the like caused by position change when the transmission gripper grabs the wafer, and improves the yield and the output.

Description

Wafer vertical stability calibration system and method for calibrating wafer vertical stability

Technical Field

The invention relates to the technical field of semiconductors, in particular to a system and a method for calibrating vertical stability of a wafer.

Background

Generally, a machine for Chemical Mechanical Polishing (CMP) is divided into a polishing part and a wafer cleaning part, and after a wafer enters a cleaning device, the wafer is subjected to input, oscillation cleaning, alkali cleaning, acid cleaning, spin drying, output and other steps, and the steps are carried out by taking the wafer from one position to another position through a gripper claw above the cleaning device. This requires that each position of the wafer be aligned with the position of the gripper to ensure that the gripper can accurately and safely grip the wafer from one position to another. The grabbing position requirement is strict, and once the position of each cleaning step deviates, the phenomenon that the wafer is grabbed by the grabbing hand fails, or the wafer is scratched or broken can be caused. The reasons for the positional deviation of each cleaning step are various. The main reasons are:

1) the wafer supporting device for acid-base cleaning is aged or abraded to cause position deviation, the wafer cannot stand in the supporting device completely and vertically, and when the wafer is grabbed by the gripper, the position of the gripper and the position of the wafer cannot be aligned to cause the problems of chip falling, fragment, scratching and the like;

2) the cleaning device is composed of a plurality of devices when the machine is installed, if the positions are unbalanced during the assembling, the positions of the grippers during the grabbing are possibly not aligned, once the machine is installed, some steps are difficult to adjust, and the positions are all connected with one another;

3) the gripper for gripping the wafer is aged after long-term use.

Therefore, in order to solve the above technical problems, the present invention provides a system and a method for calibrating vertical stability of a wafer.

Disclosure of Invention

In this summary, concepts in a simplified form are introduced that are further described in the detailed description. This summary of the invention is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.

In view of the deficiencies of the prior art, the present invention provides a system for calibrating vertical stability of a wafer, comprising:

a wafer to be calibrated;

the supporting device is used for placing the wafer to be calibrated;

the dynamic balance system is arranged on two sides of the wafer to be calibrated and is opposite to the surface of the wafer to be calibrated, the dynamic balance system comprises a plurality of nozzles with different positions, and the nozzles can spray liquid or gas to the surface of the wafer to be calibrated so as to calibrate the position of the wafer to be calibrated and keep the wafer to be calibrated in a vertical state;

and the gripping device is used for gripping the wafer to be calibrated to move from one position to another position.

The wafer calibration device comprises a wafer to be calibrated, a support device and a nozzle, wherein the wafer to be calibrated is arranged on the support device, the support device is arranged on the wafer to be calibrated, the nozzle is arranged on the wafer to be calibrated, and the inner wall of the fixed substrate is vertical to the surface of the wafer to be calibrated.

The wafer calibrating device comprises a dynamic balance system, a wafer to be calibrated and a supporting device, and further comprises a groove body, wherein a space for accommodating the dynamic balance system, the wafer to be calibrated and the supporting device is arranged in the groove body, and two side walls of the groove body, which are opposite to the wafer to be calibrated, are used as the fixed base plate.

Further, the supporting device comprises at least three supporting shafts, and the supporting shafts are respectively independently detachably mounted on the fixed base plate on one side.

Further, the support shaft protrudes outward from the inner wall of the fixed base plate by a partial length, and an axis of the support shaft is perpendicular to the inner wall of the fixed base plate.

Furthermore, the wafer to be calibrated is placed on the supporting shaft, and supporting points of the supporting shaft, which are contacted with the wafer to be calibrated, are all positioned on the circumference of a semicircle below the wafer to be calibrated.

Further, the nozzle is located above the support device.

Further, the wafer to be calibrated comprises an upper semicircle and a lower semicircle, and the nozzle sprays liquid or gas into the vertical upper semicircle of the wafer to be calibrated.

Further, the projection of the nozzle on the vertical wafer to be calibrated is positioned in the upper semicircle of the wafer to be calibrated.

Further, the number of the nozzles on both sides of the wafer to be calibrated is the same, and/or the number of the nozzles in each row is the same.

Furthermore, the nozzles on each side are arranged in a plurality of rows, and the connecting lines of the spraying points of the nozzles in each row on the vertical wafer to be calibrated are parallel to each other and parallel to the diameter of the wafer to be calibrated which is divided into an upper semicircle and a lower semicircle.

Further, the spraying point of the nozzle on the vertical wafer to be calibrated is symmetrical about another diameter of the wafer to be calibrated, which is perpendicular to the diameter.

Further, the nozzles on each side are arranged in three rows, a connection line of the ejection points of the nozzles located at the lower portion on the vertical wafer to be calibrated is defined as a first connection line, the first connection line passes through the center of the wafer to be calibrated, a connection line of the ejection points of the nozzles located at the middle portion on the standard wafer is defined as a second connection line, the second connection line is parallel to the first connection line, a connection line of the ejection points of the nozzles located at the upper portion on the standard wafer is defined as a third connection line, and a vertical distance between the second connection line and the first connection line is greater than a vertical distance between the third connection line and the second connection line.

Further, a vertical distance between the second connection line and the first connection line is 40% of the radius of the wafer to be calibrated, and a vertical distance between the third connection line and the second connection line is 30% of the radius of the wafer to be calibrated.

Further, a straight line obtained by intersecting the first connecting line and the extension line thereof with the edge of the wafer to be calibrated is the diameter of the upper semicircle of the wafer to be calibrated.

Furthermore, the intersection points of the radius of the wafer to be calibrated, which passes through the circle center and is perpendicular to the diameter of the upper semicircle, and the first connecting line, the second connecting line and the third connecting line respectively correspond to the spraying points of the nozzles on the vertical wafer to be calibrated.

Further, the number of the nozzles located on both sides of the wafer to be calibrated is the same, the number of the nozzles on each side is 9, and each row includes 3 nozzles.

Furthermore, three ejection points of the nozzle on the wafer to be calibrated are distributed on two sides of the radius in the upper semicircle of the wafer to be calibrated respectively, the three ejection points are respectively positioned on the first connecting line, the second connecting line and the third connecting line, an included angle between the radius of the ejection point positioned on the first connecting line and the radius of the ejection point positioned on the second connecting line is 30 degrees, and an included angle between the radius of the ejection point positioned on the second connecting line and the radius of the projection positioned on the third connecting line is 30 degrees.

Furthermore, the nozzles on the two sides of the surface of the wafer to be calibrated are opposite one to one, and the projections of the oppositely arranged nozzles on the surface of the wafer to be calibrated are overlapped.

Further, the motion track of the liquid or gas ejected by the nozzle is a straight line, the straight line is perpendicular to the surface of the vertical wafer to be calibrated, and the ejection point of the nozzle on the vertical wafer to be calibrated coincides with the projection of the nozzle on the vertical wafer to be calibrated.

Further, the system also comprises a detection system, and the detection system is used for detecting the angle and the direction of the wafer deviation to be calibrated.

Further, the detection system comprises an emitter and a sensor, wherein the emitter is used for emitting a detection beam to the wafer to be calibrated, and the sensor is used for sensing the light emitted by the detection beam from the wafer to be calibrated.

Further, the emitter is a laser emitter, and the detection beam is laser.

Further, the incidence direction of the detection beam emitted by the emitter to the wafer to be calibrated is vertical to the vertical surface of the wafer to be calibrated.

Further, the gripping device comprises two grippers, the two grippers can move in opposite directions or move in opposite directions, and the two grippers grip the wafer to be calibrated when moving in opposite directions.

Further, the system further comprises a vertical detection system for detecting the offset position of the wafer to be calibrated and confirming whether the wafer to be calibrated is vertical.

Further, the vertical detection system comprises an emitter and a receiving sensor, two emitters are respectively arranged at the edge positions of two sides of the wafer to be calibrated, each emitter can emit a vertical detection beam, and the detection beam is received by the receiving sensor arranged above the emitter under the condition of no blockage.

In another aspect, the present invention provides a method for calibrating vertical stability of a wafer by using the aforementioned system, wherein the method includes:

placing the wafer to be calibrated on the supporting device;

calibrating the wafer to be calibrated which is positioned on the supporting device and generates offset by using the dynamic balance system so as to enable the wafer to be calibrated to be vertically placed on the supporting device;

and using the gripping device to grip the wafer to be calibrated to move from one position to another position.

Further, after the wafer to be calibrated is placed on the supporting device, before the wafer to be calibrated is calibrated by using the dynamic balance system, the method further comprises the following steps:

detecting the offset angle and the offset direction of the wafer to be calibrated by using a detection system, and transmitting the detected information to the dynamic balance system;

and the dynamic balance system controls the opening of the nozzle at the corresponding position according to the offset angle and the offset direction of the wafer to be calibrated so as to spray liquid or gas to the wafer to be calibrated to adjust the position of the wafer to be calibrated.

Further, after the calibration, before the wafer to be calibrated is grabbed by the grabbing device to move from one position to another position, the method further comprises the following steps:

detecting whether the position of the wafer to be calibrated is vertical by using a vertical detection system, and if the position of the wafer to be calibrated is vertical, finishing the calibration of the dynamic balance calibration system; if the position of the wafer to be calibrated is detected to be shifted, detecting the shifting position and the shifting direction of the wafer to be calibrated by using the detection system again, transmitting the detected information to the dynamic balance system, and calibrating the wafer to be calibrated until the vertical detection system detects that the position of the wafer to be calibrated is vertical, and the dynamic balance calibration system is calibrated.

The wafer vertical stability calibration system comprises a dynamic balance system, wherein the dynamic balance system is positioned on two sides of a wafer to be calibrated and is opposite to the surface of the wafer to be calibrated, the dynamic balance system comprises a plurality of nozzles with different positions, and the nozzles can spray liquid or gas onto the surface of the wafer to calibrate the position of the wafer, so that the wafer is kept in a vertical state, the wafer is guaranteed not to swing when being grabbed, accurate grabbing is guaranteed, the problems of chip falling, fragment, scratch and the like caused by position change when the wafer is grabbed by a transmission gripper are avoided, and the yield are improved.

Drawings

The following drawings of the invention are included to provide a further understanding of the invention. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

In the drawings:

FIG. 1 shows a schematic of a partial acid, base wash apparatus;

FIG. 2 shows a side view of the position of a wafer in an acid and base cleaning apparatus;

FIG. 3 illustrates a schematic diagram of a wafer vertical alignment system in accordance with one embodiment of the present invention;

FIG. 4 shows a schematic diagram of a dynamic balancing system of one embodiment of the present invention;

FIG. 5 illustrates a schematic view of a vertical detection system according to an embodiment of the present invention;

FIG. 6 illustrates a dot pattern of nozzles spraying onto a wafer, in accordance with one embodiment of the present invention;

FIG. 7 illustrates the reflection site point when the wafer is tilted left and right to extreme positions in accordance with one embodiment of the present invention;

FIG. 8 illustrates the reflection point when the wafer is tilted back and forth to the extreme positions in accordance with one embodiment of the present invention;

FIG. 9 is a graph showing a distribution of possible reflected positions of reflected light in a wafer dynamic balance detection system;

FIG. 10 is a flow chart illustrating a method for calibrating vertical stability of a wafer in accordance with one embodiment of the present invention.

Detailed Description

In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art, that the present invention may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the invention.

It is to be understood that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

It will be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.

Spatial relational terms such as "under," "below," "under," "above," "over," and the like may be used herein for convenience in describing the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

Embodiments of the invention are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the invention should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an implanted region shown as a rectangle will typically have rounded or curved features and/or implant concentration gradients at its edges rather than a binary change from implanted to non-implanted region. Also, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation is performed. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present invention.

In the following description, for purposes of explanation, specific details are set forth in order to provide a thorough understanding of the present invention. The following detailed description of the preferred embodiments of the invention, however, the invention is capable of other embodiments in addition to those detailed.

Fig. 1 shows a partial schematic view of an acid and alkaline cleaning apparatus, in which it can be seen that the wafer support shaft is an integral structure of three shafts 102 on which a wafer 101 is vertically placed and the wafer 101 is grasped by a gripper 103. Fig. 2 shows a side view of the position of the wafer in the acid and base cleaning apparatus, the correct position of the wafer being: when the wafer is to be transferred by the transfer gripper, it is positioned directly below the gripper, i.e., in the "correct position" as drawn (corresponding to the solid line segment in the figure), i.e., held upright on the support shaft. The "offset" portion of the wafer (corresponding to the dashed line segment) is the error location mentioned above, and is also a location that is frequently in error.

When the wafer position goes wrong, when the wafer is grabbed by the grabbing hand, the wafer can drop, scratch, fragment and other problems from the grabbing hand. There is no good way to solve the above problems. If the supporting shaft for supporting the wafer in the acid-base cleaning tank is irreversibly worn, the whole supporting shaft (because the supporting shaft is a whole formed by three shafts) needs to be detached and then assembled and replaced, if the position of the machine table is not correct during installation, the position of the gripper is generally adjusted, so that all the positions are balanced as far as possible, but the method cannot solve the fundamental problem. Due to the rotation vibration of the supporting shaft, the change of air flow inside the cleaning tank and other reasons, wafers in the acid and alkali cleaning tank often swing left and right on the supporting shaft, so that the position of the conveying gripper when gripping the wafers is changed, and the problems of wafer falling, fragment, scratching and the like are caused.

In order to solve the foregoing technical problem, the present invention provides a system for calibrating vertical stability of a wafer, which mainly comprises:

a wafer to be calibrated;

the supporting device is used for placing the wafer to be calibrated;

The wafer vertical stability calibration system comprises a wafer dynamic balance system, wherein the wafer dynamic balance system is positioned on two sides of a wafer to be calibrated and is opposite to the surface of the wafer to be calibrated, the dynamic balance system comprises a plurality of nozzles with different positions, and the nozzles can spray liquid or gas onto the surface of the wafer to calibrate the position of the wafer, so that the wafer is kept in a vertical state, the wafer is guaranteed not to swing when being grabbed, accurate grabbing is guaranteed, the problems of wafer falling, fragment, scratch and the like caused by position change when a transmission gripper grabs the wafer are avoided, and the yield are improved.

The wafer vertical stability calibration system of the present invention is described in detail with reference to fig. 3 to 9, wherein fig. 3 shows a schematic diagram of the wafer vertical stability calibration system according to an embodiment of the present invention; FIG. 4 shows a schematic diagram of a dynamic balancing system of one embodiment of the present invention; FIG. 5 illustrates a schematic view of a vertical detection system according to an embodiment of the present invention; FIG. 6 illustrates a dot pattern of nozzles spraying onto a wafer, in accordance with one embodiment of the present invention; FIG. 7 illustrates the reflection site point when the wafer is tilted left and right to extreme positions in accordance with one embodiment of the present invention; FIG. 8 illustrates the reflection point when the wafer is tilted back and forth to the extreme positions in accordance with one embodiment of the present invention; fig. 9 shows a distribution of possible reflected positions of reflected light in a wafer dynamic balance detection system.

As an example, as shown in fig. 3, the wafer vertical stability calibration system 20 of the present invention includes a wafer 200 to be calibrated. The wafer 200 to be calibrated may be any wafer known to those skilled in the art, and may be a wafer that has completed a specific process or a bare wafer, and further, the wafer 200 to be calibrated is any wafer that needs to be kept vertical. In this embodiment, the wafer 200 to be calibrated may be a wafer after chemical mechanical polishing is required, and the wafer needs to be placed in an acid or alkali cleaning device for cleaning.

Illustratively, the system 20 for calibrating the vertical stability of the wafer further includes a fixing substrate located on both sides of the wafer 200 to be calibrated, and a portion of an inner wall of the fixing substrate opposite to the surface of the wafer to be calibrated is a vertical plane.

In one example, the system 20 for calibrating the vertical stability of the wafer of the present invention further comprises a slot, and two

side walls

204 and 205 of the slot opposite to the wafer to be calibrated are used as the fixed base plates.

Further, the tank body is internally provided with a space for accommodating a dynamic balance system, a wafer to be calibrated, a supporting device, a detection system and the like.

Optionally, the tank may be any cleaning tank, or any tank or chamber that allows the wafer to be vertically accommodated therein, and the tank generally has a bottom and a peripheral side wall.

Further, the system 20 for calibrating the vertical stability of the wafer of the present invention further comprises a supporting device for placing the wafer to be calibrated.

In one example, as shown in fig. 3, the supporting device includes at least three supporting shafts 202, each of which is independently detachably mounted on one side of the fixed substrate, and in this embodiment, each of the supporting shafts is independently detachably mounted on two

side walls

204, 205 of the cleaning tank opposite to the wafer 200 to be calibrated.

Further, the supporting shaft 202 protrudes from the inner wall of the fixed substrate by a length, and the axis of the supporting shaft 202 is perpendicular to the inner wall of the fixed substrate, that is, the axis of the supporting shaft 202 is perpendicular to the vertical surface of the wafer 200 to be calibrated.

In one example, each support shaft 202 is mounted on a base that is fixed to the fixed base plate and that is detachably mounted on the fixed base plate, or the support shafts 202 are detachably mounted on the base that is fixedly mounted on the inner wall of the fixed base plate.

Further, the supporting device includes 3 supporting shafts 202, wherein two supporting shafts 202 are located above, one supporting shaft 202 is located below the two supporting shafts, and the straight line distance from the position where the supporting shaft located below is swept to the two supporting shafts located above is equal.

In one example, the wafer to be calibrated is placed on the supporting shaft, and the supporting points of the supporting shaft 202 contacting with the wafer 200 to be calibrated are all located on the circumference of the semicircle below the wafer 200 to be calibrated.

Compared with the existing structure that the 3 support shafts are integrally fixed on the side wall of the cleaning tank, the support shafts of the invention are respectively independently and detachably arranged on the fixed base plate, so that the support shafts are convenient to independently disassemble, assemble and replace, can be finely adjusted, saves time and cost, and solves the problem that the disassembly, the assembly and the replacement of the support point integrated structure formed by the three support shafts in the cleaning tank (acid-base cleaning tank) are complicated.

Further, the system 20 for calibrating the vertical stability of the wafer further includes a dynamic balance system 201, the dynamic balance system 201 is disposed on two sides of the wafer 200 to be calibrated and is opposite to the surface of the wafer 200 to be calibrated, the dynamic balance system 201 includes a plurality of nozzles 2011 with different positions, the nozzles can spray liquid or gas onto the surface of the wafer 200 to be calibrated so as to calibrate the position of the wafer 200 to be calibrated, so that the wafer 200 to be calibrated is vertically placed and can be aligned with the gripping device, wherein the position of the nozzles spraying liquid or gas onto the surface of the wafer to be calibrated is defined as a spraying point.

Further, the motion trajectory of the liquid or gas ejected from the nozzles may be approximated to be a straight line perpendicular to the vertical surface of the wafer to be calibrated, and the ejection point of each nozzle on the wafer 200 to be calibrated coincides with the projection of the respective nozzle on the wafer 200 to be calibrated, where whether the motion trajectory of the liquid or gas ejected from the nozzles is a straight line depends mainly on the ejection speed of the nozzles and the distance between the wafer and the nozzle, and the greater the ejection speed, the closer the distance, the closer the motion trajectory is to the straight line.

The liquid or gas that the nozzle can spray may be any suitable liquid or gas known to those skilled in the art, for example, water (especially deionized water) may be preferably used as the liquid, and an inert gas such as He, Ar, etc. may be used as the gas.

Illustratively, the dynamic balance system 201 is fixed on the fixed base plate, and further, the nozzles 2011 are fixed on the fixed base plate on two sides, for example, the nozzles are fixed on two side walls of the tank (for example, an acid-base cleaning tank) opposite to the wafer to be calibrated. Illustratively, the nozzle is located above the support device.

In one example, the nozzles on each side are arranged in a plurality of rows, and the connection lines of the injection points of each row of the nozzles on the vertical wafer to be calibrated are parallel to each other and parallel to the diameter of the wafer to be calibrated 200 divided into an upper semicircle and a lower semicircle.

In one example, the number of the nozzles on both sides of the wafer 200 to be calibrated is the same, and further, the nozzles 2011 on both sides of the surface of the wafer 200 to be calibrated are opposite to each other, and the projections of the oppositely arranged nozzles 2011 on the surface of the wafer 200 to be calibrated coincide.

In one example, the number of the nozzles 2011 is the same for each row, and may be different, and is not limited herein.

For example, the nozzles 2011 spray liquid or gas onto a portion of the vertical surface of the wafer 200 to be calibrated above the support device.

In this embodiment, the wafer 200 to be calibrated includes an upper half circle and a lower half circle, and the nozzle 2011 sprays liquid or gas into the vertical upper half circle of the wafer 200 to be calibrated.

In one example, as shown in fig. 4, the spraying point of each nozzle on the vertical wafer 200 to be calibrated is located in the upper half circle of the wafer 200 to be calibrated.

It is worth mentioning that the vertical wafer to be calibrated mentioned herein refers to a wafer to be calibrated without tilting, and the vertical wafer to be calibrated is a standard state of the wafer, which can be well aligned with the gripping device.

In one example, as shown in fig. 3, 4 and 6, the nozzles on each side are arranged in a plurality of rows, and each row of the nozzles is parallel to each other on a line connecting the injection points on the vertical wafer 200 to be calibrated and is parallel to a diameter dividing the wafer 200 to be calibrated into an upper semicircle and a lower semicircle.

Further, the vertical distance between adjacent lines may be different or the same, and the vertical distance between adjacent lines located below may also be smaller than the vertical distance between adjacent lines located above.

Further, the spraying point of the nozzle on the vertical wafer 200 to be calibrated is symmetrical with respect to another diameter of the wafer to be calibrated perpendicular to the diameter dividing the wafer 200 to be calibrated into upper and lower semicircles.

In one example, as shown in fig. 6, the nozzles on each side are arranged in three rows, a connection line defining the spraying points of the nozzles located at the lower portion on the vertical wafer to be calibrated is a first connection line, the first connection line passes through the center of the wafer to be calibrated, a connection line defining the spraying points of the nozzles located at the middle portion on the standard wafer 200 is a second connection line, the second connection line is parallel to the first connection line, a connection line defining the spraying points of the nozzles located at the upper portion on the standard wafer is a third connection line, and a vertical distance between the second connection line and the first connection line is greater than a vertical distance between the third connection line and the second connection line.

In this embodiment, a vertical distance between the second connection line and the first connection line is 40% of the radius of the wafer to be calibrated, and a vertical distance between the third connection line and the second connection line is 30% of the radius of the wafer to be calibrated.

The above-described vertical distances are merely examples, and other suitable distance arrangements are also applicable to the present invention.

Further, a straight line obtained by the intersection of the first connecting line and the extension line thereof and the edge of the wafer to be calibrated is the diameter of the upper semicircle of the wafer to be calibrated.

For example, the intersection points of the radius of the wafer to be calibrated, which passes through the center of the wafer to be calibrated and is perpendicular to the diameter of the upper semicircle of the wafer to be calibrated, and the first connection line, the second connection line, and the third connection line respectively correspond to the injection points of the nozzle on the vertical wafer to be calibrated, and these injection points are central axis points for ensuring the balance of the wafer to be calibrated, that is, the injection points located on the radius perpendicular to the diameter of the upper semicircle of the wafer to be calibrated are central axis points for ensuring the balance of the wafer to be calibrated.

In one example, as shown in fig. 4 and 6, the number of nozzles located on both sides of the wafer to be calibrated is the same, the number of nozzles on each side is 9, the nozzles on one side are nozzles P1, P2, P3, P4, P5, P6, P7, P8, P9, and the nozzles on the other side are nozzles P1 ", P2", P3 ", P4", P5 ", P6", P7 ", P8", P9 ", each row includes 3 nozzles. The nozzles P1 and P1 "spray liquid or gas to the P1' position on the vertical wafer 200 to be calibrated, the rest is similar, the nozzles P2 and P2" spray to the P2' position on the vertical wafer 200 to be calibrated, the nozzles P3 and P3 "spray to the P3' position on the vertical wafer 200 to be calibrated, the nozzles P4 and P4" spray to the P4' position on the vertical wafer 200 to be calibrated, the nozzles P5 and P5 "spray to the P5' position on the vertical wafer 200 to be calibrated, the nozzles P6 and P6" spray to the P6' position on the vertical wafer 200 to be calibrated, the nozzles P7 and P7 "spray to the P7' position on the vertical wafer 200 to be calibrated, the nozzles P8 and P8" spray to the P8' position on the vertical wafer 200 to be calibrated, and the nozzles P9 and P9 "spray to the P9' position on the vertical wafer 200 to be calibrated.

Further, as shown in fig. 6, three nozzles are respectively distributed on two sides of the radius perpendicular to the diameter of the upper semicircle in the upper semicircle of the wafer 200 to be calibrated, for example, one side is a spraying point P7', P1', P2', one side is a spraying point P4', P5', P9', three spraying points are respectively located on the first, second and third connecting lines, an included angle between the radius of the spraying point P7 'located on the first connecting line and the radius of the spraying point P1' located on the second connecting line is 30 degrees, an included angle between the radius of the spraying point P1 'located on the second connecting line and the radius of the spraying point P2' located on the third connecting line is 30 degrees, an included angle between the spraying point P2 'and the spraying point P7' is 60 degrees, similarly, the injection points P4', P5', and P9' have similar included angle relationships, and are not described in detail herein.

That is, the included angle between the radius where the injection points P1 'and P5' are located and the horizontal line (i.e. the diameter of the wafer to be calibrated divided into an upper semicircle and a lower semicircle) is 30 degrees; the included angle between the radius where the injection points P2 'and P4' are located and the horizontal line is 60 degrees; the included angles between the radii where the P3 'and the P6' are located and the horizontal line are 90 degrees; p8' is located at the center of the wafer; the P7 'and P9' are located on the diameter of the wafer dividing the wafer into upper and lower semi-circles, and are located at the position points 85% of the radius of the circle center. P3', P6' and P8' are central axis points for ensuring balance of the wafer; p1', P2' and P7' are offset direction positive adjusting points; the P4', P5' and P9' are negative adjusting points in the offset direction, so that the direction of the wafer can be controlled flexibly, wherein the positive adjusting points refer to the adjusting points which enable the wafer to rotate clockwise, and the negative adjusting points refer to the adjusting points which enable the wafer to rotate anticlockwise.

It should be noted that the above-mentioned arrangement of the nozzles is only an example and does not constitute a limitation of the present invention, wherein other arrangements that can achieve the function of the nozzles of the present invention are also applicable to the present invention.

The nozzles can eject liquid or gas with different force levels to different positions on the surface of the wafer to be calibrated, and the force level of the ejected liquid or gas can be reasonably adjusted according to the offset direction or position of the wafer to be calibrated, for example, when the wafer to be calibrated is offset towards the front left (the front half part of the wafer 200 to be calibrated in fig. 4 is offset towards the side wall 204, and the rear half part is offset towards the side wall 205), the force level of the liquid or gas ejected from the nozzle positioned in the front left can be greater than that of the liquid or gas ejected from the nozzle opposite to the nozzle, so that the wafer to be calibrated can be normally and vertically placed, and the wafer can be guaranteed not to swing when being grabbed.

In one example, as shown in fig. 4, the system further includes a detection system 206, and the detection system 206 is configured to detect information such as an angle and a direction of the wafer offset to be calibrated.

Wherein the detection system 206 includes an emitter for emitting a detection beam to the wafer 200 to be calibrated and a sensor for sensing light emitted from the detection beam back from the wafer to be calibrated.

Illustratively, the transmitter may be a laser transmitter or other suitable transmitter, and when the transmitter is a laser transmitter, the detection beam is a laser.

In one example, the incidence direction of a detection beam (e.g., laser) emitted by the emitter to the wafer to be calibrated is perpendicular to the vertical surface of the wafer to be calibrated.

FIG. 7 shows the reflection position point when the wafer to be calibrated is tilted left and right to the extreme position, h 'is the emitter position point, when the wafer is in the correct position, the emitter returns to the h' point after the detection beam emitted from h 'hits o', which proves that the wafer is in the correct position, and is vertical; when the wafer is biased to the left (e.g., the o ' b ' position, i.e., the first half of the wafer 200 to be calibrated in fig. 4 is biased toward the sidewall 204, and the second half is biased toward the sidewall 205), the detection beam (e.g., laser) emitted by h ' is reflected to the e ' position point through o ', and e ' h ' is the extreme point of the left bias; when the wafer is biased to the right (e.g., the o ' a ' position, i.e., the first half of the wafer 200 to be calibrated in fig. 4 is biased toward the sidewall 205, and the second half is biased toward the sidewall 204), the detection beam emitted by h ' is reflected to the g ' position point through o ', and g ' h ' is the extreme point of the right bias.

And if the extreme point of the left deviation is equal to the extreme point of the right deviation, and the maximum deviation angle of the wafer to be calibrated is alpha, and o ' h ' is the vertical distance from the position point h ' of the emitter to the vertical wafer to be calibrated, then: for example, if the maximum offset angle α of the wafer to be calibrated is 15 degrees and o 'h' is between 80 and 90mm, the left and right offset extremum points can be calculated to be between 46.188mm and 51.962 mm.

FIG. 8 illustrates the reflection point when the wafer is tilted back and forth to the extreme positions in accordance with one embodiment of the present invention. a is a transmitter position point, when the wafer to be calibrated is in a correct position (i.e. when the wafer to be calibrated is vertical), the transmitter reflects the detection beam emitted from the point a back to the point a after hitting the point i on the ol surface of the wafer to be calibrated (for example, after the detection beam vertically enters the point i on the ol surface of the wafer to be calibrated), so as to prove that the wafer to be calibrated is in a correct position; when the wafer to be calibrated is tilted forward (for example, in an ok position, that is, the upper part of the wafer to be calibrated in fig. 4 is deflected to the sidewall 204 (the sidewall 204 is also a fixed substrate provided with a detection system)), the detection beam emitted by the emitter from the point a passes through the point c and is reflected to the point d, which is the extreme point of the forward tilt; when the wafer to be calibrated is tilted backwards (for example, from the om position, that is, the upper deflection sidewall 205 of the wafer to be calibrated in fig. 4), the detection beam emitted by the emitter from the point a is reflected to the point j through the point b, aj is the extreme point of backward tilt, the maximum offset angles of forward tilt and backward tilt of the wafer to be calibrated are both β, oi is the shortest distance from the projection of the point a at the emitter position on the vertical wafer to be calibrated to the edge of the wafer, ai is the vertical distance from the point a at the emitter position to the surface of the wafer to be calibrated, then ad-tan 2 β × ac, aj-tan 2 β × ab, ac + ci-ai, ci-tan β × oi, ac-ai-ci, ab-ac + ci + ib, if ai is a value between 80 and 90mm, oi-40 mm, β -15 °, the forward inclination extreme point ad is calculated to be between 40-45.773 mm, and the backward inclination extreme point aj is calculated to be between 52.376-58.15 mm.

When the wafer is completely vertical, the detection light beam returns to the emitter, and if the wafer is deviated, the detection system can determine the deviation angle, direction and the like of the wafer, so that the pressure (such as water pressure) of the spray point, which is sprayed to the wafer by the nozzle at the corresponding position, is adjusted, the dynamic balance of the wafer is ensured, and the wafer is in the correct position, namely, in the vertical state. When the detection beam emitter and the receiving sensor are arranged, no liquid (such as water spray) is sprayed in the container, and the normal work of the receiving sensor is not influenced.

In addition, the detection system can detect the direction and the angle of the deviation of the wafer to be calibrated, so as to determine the size of the inclination degree, and the nozzle of the dynamic balance system 201 can control the pressure (for example, water pressure) through the size of the inclination degree of the wafer to be calibrated, so as to change the vertical position of the wafer to be calibrated on the supporting shaft, and ensure accurate grabbing.

Fig. 9 shows a distribution of possible reflected positions of reflected light in a wafer dynamic balance detection system. When the wafer to be calibrated is vertical (that is, when any deviation occurs in the normal position), the detection light beam emitted by the emitter is re-emitted to the position point of the reflector, the position point is taken as the center of a circle, the point of the fixed substrate surface where the emitter is located is reflected by the reflected light when the wafer to be calibrated is only deviated to the limit angle from the left is defined as a first reflection point, the point of the fixed substrate surface where the emitter is located is reflected by the reflected light when the wafer to be calibrated is only deviated to the right is defined as a second reflection point, the point of the fixed substrate surface where the emitter is located is reflected by the reflected light when the wafer to be calibrated is only inclined forwards is defined as a third reflection point, the point of the fixed substrate surface where the emitter is located is reflected by the reflected light when the wafer to be calibrated is only inclined backwards is defined as a fourth reflection point, wherein the intersection point between the straight line connecting the first reflection point and the second reflection point and the straight line connecting the third reflection point and, the area between the straight line connecting the first reflection point and the circle center and the straight line connecting the third reflection point and the circle center and the straight line connecting the second reflection point and the circle center is defined as a first quadrant, the area between the straight line connecting the third reflection point and the circle center and the straight line connecting the second reflection point and the circle center and the straight line connecting the fourth reflection point and the circle center is defined as a second quadrant, the area between the straight line connecting the second reflection point and the circle center and the straight line connecting the fourth reflection point and the circle center is defined as a third quadrant, and the area between the straight line connecting the first reflection point and the circle center and the straight line connecting the fourth reflection point and the circle center is. When the wafer to be calibrated is only left-biased or right-biased, the reflected light falls on a straight line connecting the first reflection point and the second reflection point; when the wafer to be calibrated only inclines forwards or backwards, the reflected light falls on a straight line connecting the third reflection point and the fourth reflection point; when the wafer is inclined forwards leftwards, the reflected light falls in a fourth quadrant; when the wafer tilts backwards to the left, the reflected light falls in a first quadrant; when the wafer is inclined forwards, the reflected light falls in a third quadrant; when the wafer is tilted forward to the left, the reflected light falls in the second quadrant. For a reflection point falling on a straight line connecting the first reflection point and the second reflection point, and a straight line connecting the third reflection point and the fourth reflection point, a pressure (e.g., a point water pressure) of only a spray point (e.g., P7' and/or P9' as shown in fig. 4) of the nozzle located on a diameter dividing the vertical wafer to be calibrated into upper and lower semicircles, and a pressure (e.g., a point water pressure) of only a spray point (e.g., P3' \ P6' \ P8' as shown in fig. 4) of the nozzle located on a radius perpendicular to a diameter dividing the vertical wafer to be calibrated into upper and lower semicircles may be adjusted, respectively. For the points falling in the other four quadrants, the pressure of all the points (i.e. the ejection points) needs to be adjusted in combination, and the adjustment of the pressure of the ejection points can be achieved by adjusting the pressure of the liquid or gas ejected by the respective nozzles.

For example, as shown in fig. 9, when the wafer to be calibrated is only left-biased or right-biased, the reflected light falls on the a "b" line; when the wafer is just tilted forwards or backwards, the reflected light falls on the d 'c' straight line; when the wafer is tilted left forward, the reflected light falls within the fourth quadrant 504; when the wafer is tilted back left, the reflected light falls within the first quadrant 501; when the wafer is tilted forward right, the reflected light falls within the third quadrant 503; when the wafer is tilted forward to the left, the reflected light falls within the second quadrant 502. For the reflection points falling on a "b", d "c", it is possible to adjust only the point water pressure of P7' \ P9', P3' \ P6' \ P8 '. For points falling in the other four quadrants, the water pressure at all points needs to be adjusted comprehensively.

Further, the system of the present invention further comprises a gripping device for gripping the wafer to be calibrated to move from one position to another position.

Wherein the gripping means may be any suitable means with gripping function known to the person skilled in the art.

In this embodiment, the gripping device includes two

grippers

203a and 203b, which can move toward each other or move away from each other, and grip the wafer 200 to be calibrated when the two grippers move toward each other.

The gripping device may further comprise a gripping driving device connected to at least one of the grippers for driving at least one reciprocating motion. The gripper can also move up and down and back and forth and left and right horizontally to grip the wafer in the groove to another position.

In one example, as shown in fig. 5, the system of the present invention may further include a vertical detection system for detecting an offset position of the wafer to be calibrated, and determining whether the wafer to be calibrated is normal, that is, determining whether the wafer to be calibrated is vertical and aligned with the gripping device.

Illustratively, two transmitters are respectively arranged at the outer sides of the two supporting shafts positioned above, for example, one side is a transmitter 301a, 301b, the other side is a transmitter 302a, 302b, the transmitter 301a transmits a detection beam 3, the transmitter 301b transmits a detection beam 4, the transmitter 302b transmits a detection beam 1, the transmitter 302a transmits a detection beam 2, the distance between the two transmitters positioned at the same side is greater than the thickness of the wafer to be calibrated, the distance between the transmitted detection beams is also greater than the thickness of the wafer to be calibrated, so that when the wafer to be calibrated is not deviated, namely is kept vertical, the detection beams transmitted by the transmitters are not blocked, and once the wafer to be calibrated is deviated, the detection beams transmitted by the transmitters are blocked, for example, one of the two detection beams transmitted by the two transmitters is blocked, so that the receiving sensor receives the signal of only one detection beam, therefore, the wafer to be calibrated is judged to be deviated, the information is transmitted to the controller, the controller controls the detection system to accurately detect the deviation position and the direction of the wafer to be calibrated, the dynamic balance system is further controlled to calibrate the wafer to be calibrated, and the wafer to be calibrated can be vertically restored to the normal position. And once the receiving sensor receives the signals of the detection beams emitted by each emitter, the wafer to be calibrated can be judged to be vertical, and the wafer to be calibrated can be controlled to control the grabbing device to grab the wafer to be calibrated.

Alternatively, the emitter may be any suitable emitter, such as a laser emitter or the like.

For example, in order to align the wafer to be calibrated with the gripper, the receiving sensors may be arranged on the gripper, for example on the two

grippers

203a and 203b of the gripper.

It should be noted that the system for calibrating the vertical stability of the wafer of the present invention is not only suitable for the cleaning tank, but also suitable for all machines with vertical wafer grabbing.

The introduction of the key components of the wafer vertical stability calibration system of the present invention is completed, and other components may be required for the complete system, which is not described herein in detail.

In summary, the system for calibrating the vertical stability of a wafer of the present invention includes a dynamic balance system of the wafer, the dynamic balance system of the wafer is located at two sides of the wafer to be calibrated and is opposite to the surface of the wafer to be calibrated, the dynamic balance system includes a plurality of nozzles with different positions, the nozzles can spray liquid or gas onto the surface of the wafer to calibrate the position of the wafer, so that the wafer is vertically placed, and the wafer is guaranteed not to swing when being grabbed, thereby guaranteeing accurate grabbing, and meanwhile, the detection system can detect the direction and angle of the wafer to be calibrated, thereby determining the inclination degree, the nozzles of the dynamic balance system can control the pressure (such as water pressure) according to the inclination degree of the wafer to be calibrated to change the vertical position of the wafer to be calibrated on the supporting shaft, thereby guaranteeing accurate grabbing, and further, the problems of chip falling, chipping, scratching and the like caused by position change when the wafer is grabbed by the transmission gripper are avoided, and the yield and the output are improved.

The invention also provides a method for calibrating the vertical stability of the wafer by using the vertical stability calibration system of the wafer.

By way of example, the method for calibrating the vertical stability of the wafer of the invention comprises the following steps:

firstly, placing the wafer to be calibrated on the supporting device;

then, calibrating the wafer to be calibrated, which is positioned on the supporting device and generates offset, by using the dynamic balance system so as to vertically place the wafer to be calibrated on the supporting device;

then, the wafer to be calibrated is grabbed by the grabbing device to move from one position to another position.

The method of the present invention is described in detail below with reference to fig. 10, wherein fig. 10 shows a flowchart of a wafer vertical stability calibration method according to an embodiment of the present invention.

Firstly, the wafer to be calibrated is placed on the supporting device. The calibration wafer is vertically placed on a support device, such as a support shaft, and the position of the wafer to be calibrated is shifted due to the wear of the support shaft or some other possible reason, and the calibration is performed in order to restore the position of the wafer to be calibrated to normal, i.e., to a vertical state.

Next, a detection system may be used to detect the offset angle and the offset direction of the wafer to be calibrated, and transmit the detected information to the dynamic balancing system. The offset position, the offset direction, the angle and the like of the wafer are detected by the detection system from the horizontal direction, and the method and the principle for detecting the offset angle and the offset direction of the wafer to be calibrated by the detection system refer to the corresponding contents in the first embodiment, which is not described herein again.

Wherein, the detection system can also obtain quadrant area information on the fixed substrate provided with the detection system, to which the detection beam is emitted, and the content of the quadrant refers to the related content of the first implementation.

Then, the dynamic balance system controls the opening of the nozzles at corresponding positions according to the offset angle and the offset direction of the wafer to be calibrated (or through quadrant information directly obtained from the detection system), so as to spray liquid or gas to the wafer to be calibrated, thereby adjusting the position of the wafer to be calibrated.

Further, before the calibration is finished, a vertical detection system may be used to detect whether the position of the wafer to be calibrated after the calibration is vertical (i.e., normal), if it is detected that the position of the wafer to be calibrated is vertical (i.e., normal), the calibration of the dynamic balance calibration system is finished, if it is detected that the position of the wafer to be calibrated is shifted (i.e., abnormal), the detection system is reused to detect the shift position and shift direction of the wafer to be calibrated, and the detected information is transmitted to the dynamic balance system, and then the wafer to be calibrated is calibrated until the vertical detection system detects that the position of the wafer to be calibrated is vertical, and the calibration of the dynamic balance calibration system is finished.

In summary, the method of the present invention uses the above-mentioned wafer vertical stability calibration system, the wafer dynamic balance system is located on both sides of the wafer to be calibrated and is opposite to the surface of the wafer to be calibrated, the dynamic balance system includes a plurality of nozzles with different positions, the nozzles can spray liquid or gas onto the surface of the wafer to calibrate the position of the wafer, so that the wafer is vertically placed, and the wafer is guaranteed not to swing when being grabbed, thereby guaranteeing accurate grabbing, and meanwhile, the detection system can detect the direction and angle of the wafer to be calibrated, thereby determining the size of the tilt degree, the nozzles of the dynamic balance system can change the vertical position of the wafer to be calibrated on the support shaft by controlling the pressure (e.g. water pressure) according to the tilt degree of the wafer to be calibrated, thereby guaranteeing accurate grabbing, and the vertical detection system detects whether the wafer after calibration is vertical and whether the wafer is vertical and is aligned with the grabbing device If the offset angle and the direction of the wafer to be calibrated are not detected continuously, the position of the wafer to be calibrated is dynamically calibrated by using the dynamic balance system, so that the problems of chip falling, fragment, scratch and the like caused by position change when the wafer is grabbed by the transmission gripper are avoided, and the yield and the output are improved.

The present invention has been illustrated by the above embodiments, but it should be understood that the above embodiments are for illustrative and descriptive purposes only and are not intended to limit the invention to the scope of the described embodiments. Furthermore, it will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that many variations and modifications may be made in accordance with the teachings of the present invention, which variations and modifications are within the scope of the present invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims

1. A wafer vertical stability calibration system, comprising:

a wafer to be calibrated;

the supporting device is used for placing the wafer to be calibrated;

the gripping device is used for gripping the wafer to be calibrated to move from one position to another position;

the fixed substrates are positioned on two sides of the wafer to be calibrated, and the parts of the inner walls of the fixed substrates, which are opposite to the surface of the wafer to be calibrated, are vertical planes;

the supporting device comprises at least three supporting shafts, the supporting shafts are respectively independently and detachably mounted on the fixed base plate on one side, the wafer to be calibrated is placed on the supporting shafts, and supporting points, contacted with the wafer to be calibrated, of the supporting shafts are located on the circumference of a semicircle below the wafer to be calibrated.

2. The system of claim 1, wherein the support means is fixed to the fixed base plate on one side and the nozzle is fixed to the fixed base plate on both sides.

3. The system as claimed in claim 2, further comprising a tank body having a space therein for accommodating the dynamic balancing system, the wafer to be calibrated, and the supporting device, wherein both side walls of the tank body opposite to the wafer to be calibrated serve as the fixed base plate.

4. The system of claim 1, wherein the support shaft protrudes outwardly from an inner wall of the fixed base a partial length and an axis of the support shaft is perpendicular to the inner wall of the fixed base.

5. The system of claim 1, wherein the nozzle is positioned above the support device.

6. The system of claim 1, wherein the wafer to be calibrated comprises an upper half circle and a lower half circle, and the nozzle sprays liquid or gas into the vertical upper half circle of the wafer to be calibrated.

7. The system of claim 1, wherein a projection of the nozzle on the vertical wafer to be calibrated is located within an upper half circle of the wafer to be calibrated.

8. The system of claim 7, wherein the number of nozzles on both sides of the wafer to be calibrated is the same and/or the number of nozzles in each row is the same.

9. The system of claim 1, wherein the nozzles on each side are arranged in a plurality of rows, and a line connecting the injection points of each row of the nozzles on the vertical wafer to be calibrated is parallel to each other and to a diameter dividing the wafer to be calibrated into an upper semicircle and a lower semicircle.

10. The system of claim 9, wherein the spray points of the nozzles on the vertical wafer to be calibrated are symmetrical about another diameter of the wafer to be calibrated that is perpendicular to the diameter.

11. The system as claimed in claim 1, wherein the nozzles on each side are arranged in three rows, a line defining the injection points of the nozzles located at the lower portion on the vertical wafer to be calibrated is a first line, the first line passes through the center of the wafer to be calibrated, a line defining the injection points of the nozzles located at the middle portion on the wafer to be calibrated is a second line, the second line is parallel to the first line, a line defining the injection points of the nozzles located at the upper portion on the wafer to be calibrated is a third line, and a vertical distance between the second line and the first line is greater than a vertical distance between the third line and the second line.

12. The system of claim 11, wherein a vertical distance between the second line and the first line is 40% of a radius of the wafer to be calibrated, and a vertical distance between the third line and the second line is 30% of the radius of the wafer to be calibrated.

13. The system of claim 11, wherein a straight line obtained by the intersection of the first connection line and its extension line with the edge of the wafer to be calibrated is a diameter of an upper semicircle of the wafer to be calibrated.

14. The system of claim 13, wherein the intersection points of the radius of the wafer to be calibrated, which passes through the center of the circle and is perpendicular to the diameter of the upper semicircle, and the first, second, and third lines correspond to the spraying points of one of the nozzles on the vertical wafer to be calibrated, respectively.

15. The system of claim 14, wherein the number of nozzles on both sides of the wafer to be calibrated is the same, the number of nozzles on each side is 9, and each row comprises 3 nozzles.

16. The system as claimed in claim 15, wherein three ejection points of the nozzle on the wafer to be calibrated are distributed on two sides of the radius in the upper semicircle of the wafer to be calibrated, the three ejection points are respectively located on the first line, the second line and the third line, an included angle between a radius of the ejection point located on the first line and a radius of the ejection point located on the second line is 30 degrees, and an included angle between a radius of the ejection point located on the second line and a radius of the ejection point located on the third line is 30 degrees.

17. The system of claim 1, wherein the nozzles on both sides of the wafer surface to be calibrated are in a one-to-one correspondence, and the projections of the oppositely disposed nozzles on the wafer surface to be calibrated coincide.

18. The system according to any one of claims 1 to 17, wherein the liquid or gas ejected from the nozzles has a trajectory that is a straight line perpendicular to the vertical surface of the wafer to be calibrated, and the ejection points of the nozzles on the vertical wafer to be calibrated coincide with their respective projections on the vertical wafer to be calibrated.

19. The system of claim 1, further comprising a detection system for detecting an angle and direction of the wafer offset to be calibrated.

20. The system of claim 19, wherein the inspection system comprises an emitter for emitting an inspection beam onto the wafer to be calibrated and a sensor for sensing light emitted by the inspection beam back from the wafer to be calibrated.

21. The system of claim 20, wherein the emitter is a laser emitter and the detection beam is a laser.

22. The system of claim 20, wherein the incidence direction of the detection beam emitted by the emitter to the wafer to be calibrated is perpendicular to the vertical surface of the wafer to be calibrated.

23. The system of claim 1, wherein the gripper comprises two grippers, the grippers being arranged to be movable toward and away from each other, the grippers gripping the wafer to be aligned when moving toward each other.

24. The system of claim 1, further comprising a vertical detection system for detecting an offset position of the wafer to be calibrated and determining whether the wafer to be calibrated is vertical.

25. The system of claim 24, wherein the vertical detection system comprises two emitters each positioned at an edge location on both sides of the wafer to be calibrated, each emitter capable of emitting a vertical detection beam that is received by a receiving sensor positioned above without obstruction.

26. A method for calibrating vertical stability of a wafer using the system of any of claims 1 to 25, the method comprising:

placing the wafer to be calibrated on the supporting device;

27. The method of claim 26, wherein after placing the wafer to be calibrated on the support device and before performing calibration using the dynamic balancing system, further comprising the steps of:

28. The method of claim 27, wherein after said calibrating, before said wafer to be calibrated is moved from one position to another position using said grasping device, further comprising the steps of: