CN109285804A - The method of wafer vertical stability calibration system and calibration wafer vertical stability - Google Patents
The method of wafer vertical stability calibration system and calibration wafer vertical stability Download PDFInfo
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- CN109285804A CN109285804A CN201710602295.3A CN201710602295A CN109285804A CN 109285804 A CN109285804 A CN 109285804A CN 201710602295 A CN201710602295 A CN 201710602295A CN 109285804 A CN109285804 A CN 109285804A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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Abstract
The present invention provides a kind of method of wafer vertical stability calibration system and calibration wafer vertical stability, the system comprises: wafer to be calibrated；Support device, for placing the wafer to be calibrated；Homestat, it is set to the two sides of the wafer to be calibrated, and it is opposite with the surface of the wafer to be calibrated, the homestat includes the different nozzle in several positions, the nozzle can spray liquid or gas to the surface of the wafer to be calibrated, to calibrate the position of the wafer to be calibrated, the wafer to be calibrated is made to keep vertical state；Grabbing device is moved to another position from a position for grabbing the wafer to be calibrated.Change in location when system of the invention avoids the occurrence of transmission handgrip crawl wafer, falls the problem of piece, fragment, scratch etc., improves yield and yield.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of wafer vertical stability calibration system and calibration
The method of wafer vertical stability.
Background technique
The board of usual chemical mechanical grinding (CMP) is divided into two parts of means of abrasion and wafer cleaning, when wafer enters
After cleaning device, to be cleaned by input, oscillation cleaning, alkali, acid cleaning, dry drying, exported and etc., these steps will lead to
Handgrip pawl above over cleaning device takes wafer from a position to another position.This requires each positions locating for wafer
With the aligned in position of handgrip, guarantee that handgrip can accurately safe crawl wafer be from a position to another position.Crawl
Status requirement it is stringenter, once the position of each cleaning step is deviated, will by handgrip crawl wafer failure,
Or there is the phenomenon that scratching, fragmentation.The reason of often resulting in the position deviation of each cleaning step is diversified.Wherein lead
The reason of wanting has:
1) aging of wafer device or abrasion of support soda acid cleaning, causes position deviation, the station that wafer cannot be substantially vertical
It stands in support device, when handgrip crawl, the position of handgrip and the position of wafer cannot be aligned, and cause piece, fragment, scratch
The problems such as；
2) cleaning device is all made of many devices in installation, and if position is unbalanced when assembling, very may be used
Position is not right when handgrip can be caused to grab, once installation is completed, some steps are difficult to adjust, because these positions are all mutually to interconnect
System；
3) handgrip for grabbing wafer passes through prolonged use, aging.
Therefore, in order to solve the above technical problem, the present invention provides a kind of wafer vertical stability calibration system and sides
Method.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, the present invention provides a kind of wafer vertical stability calibration system, comprising:
Wafer to be calibrated；
Support device, for placing the wafer to be calibrated；
Homestat is set to the two sides of the wafer to be calibrated, and opposite with the surface of the wafer to be calibrated,
The homestat includes the different nozzle in several positions, the nozzle can spray liquid or gas to it is described to
The surface of calibration wafer makes the wafer to be calibrated keep vertical state to calibrate the position of the wafer to be calibrated；
Grabbing device is moved to another position from a position for grabbing the wafer to be calibrated.
It further, further include the fixed substrate for being located at the wafer two sides to be calibrated, the support device is fixed on side
The fixed substrate on, the nozzle is fixed in the fixed substrate of two sides, the inner wall of the fixed substrate with it is described
The opposite part in the surface of wafer to be calibrated is vertical plane.
Further, further include groove body, have in the groove body accommodate the homestat, the wafer to be calibrated with
And the space of the support device, the groove body two side walls opposite with the wafer to be calibrated are used as the fixed substrate.
Further, the support device includes at least three support shafts, the support shaft detachable installation independent
In the fixed substrate of side.
Further, the support shaft protrudes outward partial-length, and the support shaft from the inner wall of the fixed substrate
Axis perpendicular to the fixed substrate inner wall.
Further, the wafer to be calibrated is placed in the support shaft, and the support shaft connects with the wafer to be calibrated
The supporting point of touching is respectively positioned on the circumference of the underlying semicircle of wafer to be calibrated.
Further, the nozzle is located at the top of the support device.
Further, the wafer to be calibrated includes upper and lower two semicircles, and liquid or gas are sprayed onto vertically by the nozzle
The wafer to be calibrated upper semi-circle in.
Further, projection of the nozzle on the vertical wafer to be calibrated is located at the upper half of the wafer to be calibrated
In circle.
Further, the quantity positioned at the nozzle of the wafer two sides to be calibrated is identical, and/or, it is sprayed described in every a line
The number of mouth is identical.
Further, the nozzle of every side is arranged at several rows, and nozzle described in every a line is in the vertical crystalline substance to be calibrated
The line of spray site on circle is parallel to each other, and equal with the wafer to be calibrated is divided into two and half diameter of a circles up and down
Row.
Further, spray site of the nozzle on the vertical wafer to be calibrated is about the institute vertical with the diameter
State another diameter symmetry of wafer to be calibrated.
Further, the nozzle arrangement of every side is at three rows, and definition is located at the nozzle of lower part described in vertical
The line of spray site on wafer to be calibrated is the first line, then first line passes through the center of circle of the wafer to be calibrated,
The line that definition is located at the spray site of the nozzle on the standard wafer at middle part is the second line, second line with
First line is parallel, defines the line of spray site of the superposed nozzle on the standard wafer as third company
Line, the vertical range between second line and first line are greater than between the third line and second line
Vertical range.
Further, the vertical range between second line and first line is the wafer radius to be calibrated
40%, the vertical range between the third line and second line is the 30% of the wafer radius to be calibrated.
Further, first line and its extended line intersect straight line obtained with the edge of the wafer to be calibrated and are
The upper half diameter of a circle of the wafer to be calibrated.
Further, by the center of circle and the to be calibrated wafer vertical with the upper half diameter of a circle radius and
The intersection point of first line, second line and the third line respectively corresponds the nozzle described in vertical
Spray site on wafer to be calibrated.
Further, the quantity positioned at the nozzle of the two sides of the wafer to be calibrated is identical, the number of nozzle described in every side
Amount is 9, and every a line includes 3 nozzles.
Further, it in the upper semi-circle of the wafer to be calibrated, is respectively distributed in the two sides of the radius there are three the spray
Spray site of the mouth on the wafer to be calibrated, three spray sites are located at first line, second line
On the third line, radius where the spray site on first line and the injection being located on second line
Angle where point between radius is 30 degree, and radius where the spray site on second line connects with the third is located at
Angle where the projection on line between radius is 30 degree.
Further, the nozzle positioned at the crystal column surface two sides to be calibrated is opposite one by one, and the nozzle being oppositely arranged is described
Projection on crystal column surface to be calibrated is overlapped.
Further, the motion profile of the nozzle sprays liquid or gas is straight line, and the straight line is perpendicular to vertical institute
The surface of wafer to be calibrated is stated, spray site of the nozzle on the vertical wafer to be calibrated and the nozzle are each comfortable perpendicular
Projection on the straight wafer to be calibrated coincides.
Further, the system also includes detection systems, and the detection system is for detecting the wafer offset to be calibrated
Angle and direction.
Further, the detection system includes transmitter and sensor, and the transmitter is for emitting detection light beam to institute
Wafer to be calibrated is stated, the sensor is for incuding the detection light beam from the light being transmitted back on the wafer to be calibrated.
Further, the transmitter is laser emitter, and the detection light beam is laser.
Further, the transmitter is emitted to incident direction and vertically described of the detection light beam of the wafer to be calibrated
The surface of wafer to be calibrated is vertical.
Further, the grabbing device includes two handgrips, and described two handgrips can move towards or be moved away from ground
Setting, described two handgrips clamp the wafer to be calibrated when moving towards.
Further, the system also includes vertical detecting systems, for detecting the deviation post of the wafer to be calibrated, really
Recognize whether the wafer to be calibrated is vertical.
Further, the vertical detecting system includes transmitter and receiving sensor, at the edge of wafer two sides to be calibrated
Two transmitters are respectively arranged in position, and each transmitter can emit vertical detection light beam, in the case where no blocking, detection
The receiving sensor that light beam is arranged on top is received.
Further aspect of the present invention provides a kind of method using system calibration wafer vertical stability above-mentioned, and feature exists
In, which comprises
The wafer to be calibrated is placed in the support device；
Using the homestat to be located in the support device and the wafer to be calibrated that shifts into
Row calibration, so that the wafer to be calibrated is vertically placed in the support device；
The wafer to be calibrated, which is grabbed, using the grabbing device is moved to another position from a position.
Further, after the wafer to be calibrated is placed in the support device, the dynamic equilibrium system is used
It is further comprising the steps of before system is calibrated:
The information for being detected deviation angle and the offset direction of the wafer to be calibrated using detection system, and being will test is passed
Pass the homestat；
Deviation angle and offset direction of the homestat according to the wafer to be calibrated, control corresponding position
The unlatching of the nozzle, to spray liquid or gas to the wafer to be calibrated, to adjust the position of the wafer to be calibrated.
Further, after the cali-bration, the wafer to be calibrated is grabbed using the grabbing device to move from a position
It is further comprising the steps of before moving another position:
Whether the position using the wafer to be calibrated after the detecting calibration of vertical detecting system is vertical, if detecting described
The position of wafer to be calibrated be it is vertical, then dynamic equilibrium calibration system calibration terminates；If detecting the crystalline substance to be calibrated
Round position shifts, then reuses deviation post and offset direction that detection system detects the wafer to be calibrated, and
The step of information that will test passes to the homestat, then the wafer to be calibrated is calibrated, Zhi Daosuo
Stating vertical detecting system and detecting the position of the wafer to be calibrated is vertical, the dynamic equilibrium calibration system calibration knot
Beam.
Wafer vertical stability calibration system of the invention includes homestat, and the homestat is located at institute
The two sides of wafer to be calibrated are stated, and opposite with the surface of the wafer to be calibrated, the homestat includes several positions
Different nozzles is set, the nozzle can spray liquid or gas to the surface of the wafer, to calibrate the position of the wafer
It sets, the wafer is made to keep vertical state, guarantee that wafer is not waved when being crawled, to guarantee precisely crawl, in turn
Change in location when avoiding the occurrence of transmission handgrip crawl wafer, falls the problem of piece, fragment, scratch etc., improves yield and production
Amount.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing:
Fig. 1 shows the schematic diagram of part acid, alkali cleaning device；
Fig. 2 shows the side views of position of the wafer in acid, alkali cleaning device；
Fig. 3 shows the schematic diagram of the wafer vertical calibration system of an embodiment of the invention；
Fig. 4 shows the schematic diagram of the homestat of an embodiment of the invention；
Fig. 5 shows the schematic diagram of the vertical detecting system of an embodiment of the invention；
The nozzle that Fig. 6 shows an embodiment of the invention is sprayed onto the bit map/bitmap on wafer；
Reflection position point when the wafer that Fig. 7 shows an embodiment of the invention tilts to extreme position；
Reflection position point when the wafer that Fig. 8 shows an embodiment of the invention tilts forward and back extreme position；
Fig. 9 shows the location map that reflected light may be reflected into wafer dynamic equilibrium detection system；
Figure 10 shows the flow chart of the wafer vertical stability calibration method of one embodiment of the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
It describes to send out herein with reference to the cross-sectional view of the schematic diagram as desirable embodiment (and intermediate structure) of the invention
Bright embodiment.As a result, it is contemplated that from the variation of shown shape as caused by such as manufacturing technology and/or tolerance.Therefore,
The embodiment of the present invention should not necessarily be limited to the specific shape in area shown here, but including due to for example manufacturing caused shape
Shape deviation.For example, being shown as the injection region of rectangle usually has round or bending features and/or implantation concentration ladder at its edge
Degree, rather than binary from injection region to non-injection regions changes.Equally, which can lead to by the disposal area that injection is formed
Some injections in area between the surface passed through when injection progress.Therefore, the area shown in figure is substantially schematic
, their shape is not intended the true form in the area of display device and is not intended to limit the scope of the invention.
In order to thoroughly understand the present invention, detailed structure and step will be proposed in following description, to illustrate this
Invent the technical solution proposed.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this hair
It is bright to have other embodiments.
Fig. 1 shows the partial schematic diagram of acid, alkali cleaning device, and can see the support shaft of wafer in figure is by three axis
The integral structure of 102 compositions, wafer 101 are vertically placed in the support shaft, grab wafer 101 using handgrip 103.Fig. 2 shows
The side view of position of the wafer in acid, alkali cleaning device, the correct position of wafer is: when wafer handgrip transmission to be transmitted
When, positioned at the underface of handgrip, that is, " correct position " (real segment in corresponding diagram) drawn in figure, namely keep vertically
It is placed in support shaft.Wherein wafer " positional shift " drawn in figure part (phantom line segments in corresponding diagram), then be mentioned above
The errors present arrived, and the position often malfunctioned.
Wafer position when something goes wrong, when handgrip grab wafer when, wafer will appear fall, scratch from handgrip, fragment
The problems such as.It also solves the above problems at present without good method.If supporting the support shaft hair of wafer in soda acid rinse bath
Raw irreversible abrasion, then need to remove entire support shaft (entirety being made of due to support shaft three axis), so
After carry out assembling replacement, if if position is not right when board itself is installed, usually adjust handgrip position so that each position
It is mutually balanced as far as possible between setting, but such method not can solve root problem.Crystalline substance in acid, alkali rinse bath
Circle also often will cause wafer in support shaft due to the whirling vibration of support shaft, variation of rinse bath internal gas flow etc.
It is swung left and right, so that change in location when transmission handgrip crawl wafer is caused, the problems such as falling piece, fragment, scratch.
In order to solve aforementioned technical problem, the present invention provides a kind of wafer vertical stability calibration system, mainly wraps
It includes:
Wafer to be calibrated；
Support device, for placing the wafer to be calibrated；
Homestat is set to the two sides of the wafer to be calibrated, and opposite with the surface of the wafer to be calibrated,
The homestat includes the different nozzle in several positions, the nozzle can spray liquid or gas to it is described to
The surface of calibration wafer makes the wafer to be calibrated keep vertical state to calibrate the position of the wafer to be calibrated；
Grabbing device is moved to another position from a position for grabbing the wafer to be calibrated.
Wafer vertical stability calibration system of the invention includes wafer homestat, wafer dynamic equilibrium system
System is located at the two sides of the wafer to be calibrated, and opposite with the surface of the wafer to be calibrated, and the homestat includes
The different nozzle in several positions, the nozzle can spray liquid or gas to the surface of the wafer, described in calibration
The position of wafer makes the wafer keep vertical state, guarantees that wafer is not waved when being crawled, to guarantee precisely to grab
Change in location when taking, and then avoiding the occurrence of transmission handgrip crawl wafer, falls the problem of piece, fragment, scratch etc., improves good
Rate and yield.
In the following, being described in detail with reference to Fig. 3 to Fig. 9 to wafer vertical stability calibration system of the invention, wherein Fig. 3
Show the schematic diagram of the wafer vertical calibration system of an embodiment of the invention；Fig. 4 shows a reality of the invention
Apply the schematic diagram of the homestat of mode；Fig. 5 shows showing for the vertical detecting system of an embodiment of the invention
It is intended to；The nozzle that Fig. 6 shows an embodiment of the invention is sprayed onto the bit map/bitmap on wafer；Fig. 7 shows of the invention
Reflection position point when the wafer of one embodiment tilts to extreme position；Fig. 8 shows one embodiment of the present invention
Reflection position point when the wafer of formula tilts forward and back extreme position；Fig. 9 shows reflected light in wafer dynamic equilibrium detection system
The location map that may be reflected into.
As an example, as shown in figure 3, wafer vertical stability calibration system 20 of the invention includes wafer 200 to be calibrated.
Wherein, which can make any wafer well known to those skilled in the art, can be and have been completed spy
The wafer for determining manufacturing process is also possible to bare silicon wafer, and further the wafer 200 to be calibrated is to need to keep vertical any crystalline substance
Circle.In the present embodiment, which can be the wafer after having carried out chemical mechanical grinding due to process requirement, should
Wafer needs, which are placed into sour, alkali cleaning device, to be cleaned.
Illustratively, wafer vertical stability calibration system 20 of the invention further includes being located at the wafer 200 to be calibrated
The fixed substrate of two sides, the inner wall of the fixed substrate part opposite with the surface of the wafer to be calibrated are vertical put down
Face.
In one example, wafer vertical stability calibration system 20 of the invention further includes groove body, the groove body and institute
The opposite two side walls 204,205 of wafer to be calibrated are stated as the fixed substrate.
Further, have in the groove body and accommodate homestat, wafer to be calibrated, support device and detection system
Deng space.
Optionally, the groove body can be arbitrary rinse bath, be also possible to any receiving for keeping wafer vertical
In groove body or cavity etc. wherein, usual situation lower groove has bottom and surrounding side wall.
Further, wafer vertical stability calibration system 20 of the invention further includes support device, described for placing
Wafer to be calibrated.
In one example, as shown in figure 3, the support device includes at least three support shafts 202, the support shaft is each
From the independent fixed substrate for being removably mounted at side, in the present embodiment, the support shaft is independent removable
Unload the two side walls 204,205 opposite with the wafer 200 to be calibrated for being mounted on rinse bath.
Further, the support shaft 202 protrudes outward partial-length, and the branch from the inner wall of the fixed substrate
The axis of axis 202 is supportted perpendicular to the inner wall of the fixed substrate namely the axis of the support shaft 202 and vertical crystalline substance to be calibrated
The surface of circle 200 is vertical.
In one example, each support shaft 202 is mounted on a pedestal, and the pedestal is fixed on the fixed substrate
On, the pedestal is detachably arranged in the fixed substrate, alternatively, the support shaft 202 be detachably arranged in it is described
On pedestal, the pedestal is fixedly mounted on the inner wall of the fixed substrate.
Further, the support device includes 3 support shafts 202, wherein and two support shafts 202 are located above, and one
Support shaft 202 is located at the lower section of two support shafts, underlying support shaft sweep position to two branch being located above
The linear distance for supportting axis is equal.
In one example, the wafer to be calibrated is placed in the support shaft, the support shaft 202 with it is described to school
The supporting point of 200 contact of quasi-crystalline substance circle is respectively positioned on the circumference of the underlying semicircle of the wafer to be calibrated 200.
Compared with the existing structure being fixed in cleaning groove sidewall that 3 support shafts are whole, support shaft of the invention
It is independent to be detachably arranged in fixed substrate, be convenient for independent disassembling, assembling and replacing, and can finely tune, save the time, at
This, the supporting point integral structure disassembling, assembling and replacing for solving the problems, such as that three support shafts are constituted in rinse bath (soda acid rinse bath) is many and diverse.
Further, wafer vertical stability calibration system 20 of the invention further includes homestat 201, and dynamic is flat
Balance system 201 is set to the two sides of the wafer to be calibrated 200, and opposite with the surface of the wafer 200 to be calibrated, described dynamic
State balance system 201 includes the different nozzle 2011 in several positions, and the nozzle can spray liquid or gas described in
The surface of wafer 200 to be calibrated puts the wafer to be calibrated 200 vertically to calibrate the position of the wafer to be calibrated 200
Set, and can be aligned with grabbing device, wherein define nozzle injection liquid or gas to the wafer to be calibrated table
The position in face is spray site.
Further, the motion profile of the nozzle sprays liquid or gas can approximately be straight line, which hangs down
Directly in the surface of the vertical wafer to be calibrated, then spray site and the nozzle of each nozzle on wafer 200 to be calibrated
Projection on each leisure wafer 200 to be calibrated is overlapped, wherein the motion profile of liquid or gas that the nozzle sprays is
No is straight line, depends primarily on nozzle velocity and the distance between wafer and nozzle, jet velocity is bigger, and distance is got over
Closely, then motion profile closer to straight line.
Wherein, the liquid or gas that the nozzle can spray can be well known to those skilled in the art any suitable
Liquid or gas, such as liquid can be preferably with water (especially deionized water), and indifferent gas then can be used in gas
Body such as He, Ar etc..
Illustratively, the homestat 201 is fixed in the fixed substrate, further, the nozzle
2011 are fixed in the fixed substrate of two sides, for example, nozzle be fixed on the groove body (such as soda acid rinse bath) with institute
It states in the opposite two side walls of wafer to be calibrated.Illustratively, the nozzle is located at the top of the support device.
In one example, the nozzle of every side is arranged at several rows, nozzle described in every a line described in vertical to
The line of spray site on calibration wafer is parallel to each other, and is divided to by the wafer 200 to be calibrated for upper and lower two semicircles
Diameter is parallel.
In one example, the quantity positioned at the nozzle of 200 two sides of wafer to be calibrated is identical, further,
Nozzle 2011 positioned at the 200 surface two sides of wafer to be calibrated is opposite one by one, and the nozzle 2011 being oppositely arranged is described to school
Projection on 200 surfaces of quasi-crystalline substance circle is overlapped.
In one example, the number of nozzle 2011 described in every a line is identical, or different numbers is not done herein
It is specific to limit.
Illustratively, liquid or gas are sprayed onto being located at for the vertical wafer 200 to be calibrated by the nozzle 2011
In part of the surface above the support device.
In the present embodiment, the wafer 200 to be calibrated includes upper and lower two semicircles, and the nozzle 2011 is by liquid or gas
Body is sprayed onto the upper semi-circle of the vertical wafer 200 to be calibrated.
In one example, as shown in figure 4, injection of each nozzle on the vertical wafer 200 to be calibrated
Point is located in the upper semi-circle of the wafer 200 to be calibrated.
It is noted that the vertical wafer to be calibrated mentioned herein refers to the crystalline substance to be calibrated of non-run-off the straight
Circle, the vertical wafer to be calibrated are the standard state of wafer, can be aligned well with grabbing device.
In one example, as shown in Fig. 3, Fig. 4 and Fig. 6, the nozzle of every side is arranged at several rows, described in every a line
The line of the spray site of the nozzle on the vertical wafer 200 to be calibrated is parallel to each other, and with will be described to be calibrated
Wafer 200 be divided to for upper and lower two and half diameter of a circle it is parallel.
Further, the vertical range between adjacent connection lines may be different or the same, and can also make underlying
Vertical range between adjacent connection lines is less than the vertical range between the adjacent connection lines being located above.
Further, spray site of the nozzle on the vertical wafer 200 to be calibrated is about described to school with general
Another diameter symmetry of 200 points of the quasi-crystalline substance circle for the vertical wafer to be calibrated of upper and lower two and half diameter of a circle.
In one example, as shown in fig. 6, the nozzle arrangement of every side is at three rows, definition is located at the described of lower part
The line of spray site of the nozzle on the vertical wafer to be calibrated is the first line, then first line pass through it is described to
The center of circle of calibration wafer, the line that definition is located at spray site of the nozzle at middle part on the standard wafer 200 is second
Line, second line is parallel with first line, defines the superposed nozzle on the standard wafer
The line of spray site is third line, and the vertical range between second line and first line connects greater than the third
Vertical range between line and second line.
In the present embodiment, the vertical range between second line and first line is the wafer to be calibrated half
The 40% of diameter, the vertical range between the third line and second line are the 30% of the wafer radius to be calibrated.
Above-mentioned vertical range is only as an example, be equally applicable to the present invention for other suitable distance settings.
Further, first line and its extended line intersect straight line obtained with the edge of the wafer to be calibrated
For the upper half diameter of a circle of the wafer to be calibrated.
Illustratively, it hangs down in the center of circle by the wafer to be calibrated and with the upper half diameter of a circle of the wafer to be calibrated
The intersection point of the radius and first line, second line and the third line of the straight wafer to be calibrated is right respectively
Spray site of the nozzle on the vertical wafer to be calibrated is answered, those spray sites are to guarantee wafer balance to be calibrated
Axial point, namely spray site on the vertical radius of the upper half diameter of a circle of the wafer to be calibrated be guarantee it is to be calibrated
The axial point of wafer balance.
In one example, as shown in Figure 4 and Figure 6, positioned at the two sides of the wafer to be calibrated the nozzle quantity
Identical, the quantity of nozzle described in every side is 9, and the nozzle of side is nozzle P1, P2, P3, P4, P5, P6, P7, P8, P9 respectively,
The nozzle of the other side is nozzle P1 ", P2 ", P3 ", P4 ", P5 ", P6 ", P7 ", P8 ", P9 " respectively, and every a line includes 3 sprays
Mouth.Liquid or gas are sprayed onto the position P1' on vertical wafer to be calibrated 200 by nozzle P1 and P1 ", other points and so on,
Nozzle P2 and P2 " are sprayed onto the position P2' on vertical wafer to be calibrated 200, and nozzle P3 and P3 " are sprayed onto vertical wafer to be calibrated
The position P3' on 200, nozzle P4 and P4 " are sprayed onto the position P4' on vertical wafer to be calibrated 200, and nozzle P5 and P5 " are sprayed onto
The position P5' on vertical wafer to be calibrated 200, nozzle P6 and P6 " are sprayed onto the position P6' on vertical wafer to be calibrated 200,
Nozzle P7 and P7 " are sprayed onto the position P7' on vertical wafer to be calibrated 200, and nozzle P8 and P8 " are sprayed onto vertical wafer to be calibrated
The position P8' on 200, nozzle P9 and P9 " are sprayed onto the position P9' on vertical wafer to be calibrated 200.
Further, as shown in fig. 6, in the upper semi-circle of the wafer 200 to be calibrated, described and the upper semi-circle
The two sides of the vertical radius of diameter be respectively distributed there are three the nozzle on the wafer to be calibrated, such as side be spray site
P7', P1', P2', side are spray site P4', P5', P9', and three spray sites are located at first line, described the
On two lines and the third line, the spray site P7', place radius on first line be located at described the
Angle where the spray site P1' on two lines between radius is 30 degree, the injection on second line
Angle between radius where point P1' and the place the spray site P2' radius on the third line is 30 degree, injection
Angle between point P2' and spray site P7' is 60 °, and similarly spray site P4', P5', P9' also has similar angled relationships, herein
No longer repeat one by one.
That is, wafer to be calibrated (is also divided into two up and down by radius and horizontal line that spray site P1' and P5' are located at
Half diameter of a circle) angle be 30 degree；The radius and horizontal angle that spray site P2' and P4' are located at are 60 degree；P3',
The radius and horizontal angle that P6' is located at are 90 degree；P8' is located at wafer center namely center location；P7', P9' are located at
Wafer is divided into upper lower half circle diametrically by wafer, 85% location point apart from center of circle radius.P3', P6', P8' are to guarantee crystalline substance
The axial point of circle balance；P1', P2', P7' are offset direction forward direction point of adjustment；P4', P5', P9' are offset direction negative regulation
Point, in this way distribution greatly can flexibly control the direction of wafer, wherein positive point of adjustment is to instigate wafer that up time can occur
The point of adjustment of needle rotation, negative regulation point is the point of adjustment for instigating wafer that can rotate counterclockwise.
It is noted that the arrangement mode of said nozzle is only as an example, be construed as limiting the invention, wherein
The present invention is equally applicable to for the arrangement mode for the effect that others can be realized the nozzle of the invention.
Wherein, several nozzles can spray dynamics liquid of different sizes or gas to crystal column surface to be calibrated
Different location, the strength of ejection liquid or gas described in each nozzle can according to the offset direction of wafer to be calibrated or
Person position is reasonably adjusted, such as when wafer to be calibrated deviates (before the wafer to be calibrated 200 in Fig. 4 towards left front
Half part is biased to side wall 204, and latter half is biased to side wall 205) when, then liquid or gas that the nozzle positioned at left front can be made to spray
The dynamics of body is greater than the dynamics of liquid or gas that nozzle corresponding thereto sprays, so that wafer to be calibrated can be calibrated to normally
Vertical placement, it is ensured that wafer is not waved when being crawled.
In one example, as shown in figure 4, the system also includes detection system 206, the detection system 206 is used for
Detect the information such as the angle and direction of the wafer offset to be calibrated.
Wherein, the detection system 206 includes transmitter and sensor, and the transmitter is for emitting detection light beam to institute
Wafer 200 to be calibrated is stated, the sensor is for incuding the detection light beam from the light being transmitted back on the wafer to be calibrated
Line.
Illustratively, the transmitter can be laser emitter or other suitable transmitters, in the transmitter
When for laser emitter, the detection light beam is laser.
In one example, the transmitter is emitted to the incidence of the detection light beam (such as laser) of the wafer to be calibrated
Direction is vertical with the vertical surface of the wafer to be calibrated.
The reflection position when wafer to be calibrated that Fig. 7 shows an embodiment of the invention tilts to extreme position
Point, h' is emitter position point, when wafer is in correct position, the detection light beam that transmitter emits from h' get to after o'
Return to h' point, it was demonstrated that wafer position is correct, and vertical；When wafer left avertence (in such as position o'b' namely Fig. 4 to school
Quasi-crystalline substance circle 200 first half be biased to side wall 204, latter half be biased to side wall 205), h' transmitting detection light beam (such as swash
Light) pass through o' back reflection to e' location point, e'h' is exactly the extreme point of left avertence；(such as position o'a', Ye Jitu when wafer right avertence
The first half of wafer to be calibrated 200 in 4 is biased to side wall 205, and latter half is biased to side wall 204), the detection light beam of h' transmitting
By o' back reflection to g' location point, g'h' is exactly the extreme point of right avertence.
The extreme point of left avertence is equal to the extreme point of right avertence, it is assumed that wafer peak excursion angle to be calibrated is α, and o'h' is hair
The location point h' point of emitter to vertical wafer to be calibrated vertical range, then: 2 α * o'h' of e'h'=g'h'=tan, for example,
Wafer peak excursion angle [alpha] to be calibrated is 15 degree, and between 80~90mm, then can calculate left and right offset extreme point is o'h'
46.188mm between~51.962mm.
Reflection position point when the wafer that Fig. 8 shows an embodiment of the invention tilts forward and back extreme position.A is
Emitter position point, when wafer to be calibrated is in correct position (namely wafer to be calibrated vertical when), transmitter is from a point
After the i point that the detection light beam of place's transmitting is got on the face wafer ol to be calibrated (such as detection light beam impinges perpendicularly on wafer to be calibrated
After i point on the face ol) it is reflected back a point again, it was demonstrated that and wafer position to be calibrated is correct；When wafer to be calibrated leans forward (such as position ok,
Namely side wall 204 (side wall 204 namely the fixed substrate for being provided with detection system) is biased on the top of the wafer to be calibrated in Fig. 4),
The detection light beam that transmitter emits from a point is exactly the extreme point to lean forward by c point back reflection to d location point ad；When to be calibrated
(side wall 205 is biased in the top of the wafer to be calibrated in such as position om namely Fig. 4) when wafer hypsokinesis, and transmitter emits from a point
Detection light beam by b point back reflection to j location point, aj is exactly the extreme point of hypsokinesis, and wafer to be calibrated leans forward with hypsokinesis most
Big deviation angle is β, and oi is the side of projector distance wafer of the position a point of transmitter on the vertical wafer to be calibrated
The shortest distance of edge, ai be transmitter position a point to numerical value crystal column surface to be calibrated vertical range, then ad=tan2 β
× ac, aj=tan2 β × ab, ac+ci=ai, ci=tan β × oi, ac=ai-ci, ab=ac+ci+ib, it is assumed that ai be 80~
Numerical value between 90mm, oi=40mm, β=15 ° can then calculate acquisition and lean forward extreme point ad between 40~45.773mm,
Hypsokinesis extreme point aj is between 52.376~58.15mm.
When wafer position is substantially vertical, detection light beam can return to emitter position, if wafer position shifts,
Detection system can determine the angle and direction etc. of wafer offset, so that the nozzle of opposite position to be ejected into the spray on wafer
The pressure (such as hydraulic pressure) of exit point is adjusted, and guarantees the dynamic equilibrium of wafer, so that wafer is in correct position, namely be in
Vertical state.Without jetting liquid (such as water spray) shape inside container when set detection light-beam transmitter and receiving sensor work
State does not influence the normal work of receiving sensor.
In addition, detection system can detecte direction and the angle of wafer offset to be calibrated, to judge inclined degree
Size, the nozzle of homestat 201 can control pressure (such as water by the size of the inclined degree of wafer to be calibrated
Pressure), to change vertical position of the wafer to be calibrated in support shaft, guarantee precisely crawl.
Fig. 9 shows the location map that reflected light may be reflected into wafer dynamic equilibrium detection system.With to be calibrated
When wafer is vertical (namely position is normally when any offset occurs), the detection light beam that transmitter is emitted can be transmitted back to instead again
Location point where emitter, using this location point as the center of circle, with when wafer to be calibrated is left avertence to extreme angles reflected light it is anti-
The point for being mapped to the fixed substrate surface where transmitter is defined as the first reflection point, and when wafer only right avertence to be calibrated, reflected light is anti-
The point for being mapped to the fixed substrate surface where transmitter is defined as the second reflection point, and when wafer to be calibrated only leans forward, reflected light is anti-
The point for being mapped to the fixed substrate surface where transmitter is defined as third reflection point, and when wafer only hypsokinesis to be calibrated, reflected light is anti-
The point for being mapped to the fixed substrate surface where transmitter is defined as the 4th reflection point, wherein connecting the first reflection point and the second reflection
Intersection point between the straight line and connection third reflection point and the straight line of the 4th reflection point of point is the center of circle, wherein definition connection
Region between first reflection point and the straight line and third reflection point and the straight line in the center of circle in the center of circle is first quartile, definition connection the
Region between three reflection points and the straight line and the second reflection point and the straight line in the center of circle in the center of circle is the second quadrant, definition connection second
Region between reflection point and the straight line and the 4th reflection point and the straight line in the center of circle in the center of circle is third quadrant, and definition connection first is anti-
Region between exit point and the straight line and the 4th reflection point and the straight line in the center of circle in the center of circle is fourth quadrant.Then when wafer to be calibrated
When being left avertence or right avertence, reflected light is fallen on the straight line of the first reflection point of connection and the second reflection point；When wafer to be calibrated
It is to lean forward or when hypsokinesis, reflected light is fallen on the straight line of connection third reflection point and the 4th reflection point；When wafer is left front to incline,
Reflected light is fallen in fourth quadrant；When wafer is left back to incline, reflected light is fallen in first quartile；When the wafer right side is leaned forward, reflection
Light is fallen in third quadrant；When wafer is left front to incline, reflected light is fallen in the second quadrant.For fall in connection the first reflection point and
On the straight line of second reflection point, connection third reflection point and the 4th reflection point straight line on reflection point, can correspond to only adjust
The nozzle, which is located at, is divided into the spray site diametrically of upper and lower two semicircles (for example, such as Fig. 4 for the vertical wafer to be calibrated
Shown in P7' and/or P9') pressure (such as point hydraulic pressure), can only adjust the nozzle be located at will be vertical described in
Calibration wafer is divided into the spray site on the vertical radius of upper and lower two and half diameter of a circle (for example, P3' P6' as shown in Figure 4
P8' pressure (such as point hydraulic pressure)).For the point fallen in other four quadrants, need all points of comprehensive adjustment (namely
Spray site) pressure, the pressure for adjusting spray site can be and adjusting the pressure of liquid or gas that nozzle is sprayed accordingly
It realizes.
Illustratively, as shown in figure 9, when wafer to be calibrated is left avertence or right avertence, reflected light falls in a " b " straight line
On；When wafer only leans forward or when hypsokinesis, reflected light is fallen on d " c " straight line；When wafer is left front to incline, reflected light falls in
In four-quadrant 504；When wafer is left back to incline, reflected light is fallen in first quartile 501；When the wafer right side is leaned forward, reflected light is fallen in
In third quadrant 503；When wafer is left front to incline, reflected light is fallen in the second quadrant 502.It is anti-on a " b ", d " c " for falling in
Exit point, can only adjust P7' P9', P3' P6' P8' point hydraulic pressure.For the point fallen in other four quadrants, need
The hydraulic pressure of all points of comprehensive adjustment.
Further, system of the invention further includes grabbing device, for grabbing the wafer to be calibrated from a position
It is moved to another position.
Wherein, the grabbing device can make any suitable dress with crawl function well known to those skilled in the art
It sets.
In the present embodiment, the grabbing device includes two handgrips 203a and 203b, and described two handgrips can move in opposite directions
It moves or is arranged with being moved away from, described two handgrips clamp the wafer to be calibrated 200 when moving towards.
Illustratively, grabbing device further includes crawl driving device, and the crawl driving device is grabbed with described at least one
Hand connection, drives at least one reciprocating motion.Handgrip can also stretching motion and horizontal movement all around up and down, slot will be located at
Interior wafer grabs another location.
In one example, as shown in figure 5, system of the invention can also include vertical detecting system, for detecting
The deviation post of wafer to be calibrated is stated, confirms whether the wafer to be calibrated is normal, namely whether confirm the wafer to be calibrated
It keeps vertical and is aligned with the grabbing device.
Further, the vertical detecting system includes transmitter and receiving sensor, on the side of wafer two sides to be calibrated
Two transmitters are respectively arranged in edge position, and each transmitter can emit vertical detection light beam, in the case where no blocking, inspection
The receiving sensor that survey light beam is arranged on top is received.
Illustratively, two transmitters are respectively set on the outside of two support shafts being located above, for example, side is hair
Emitter 301a, 301b, the other side are transmitter 302a, 302b, transmitter 301a transmitting detection light beam 3, transmitter 301b transmitting
Light beam 4, transmitter 302b transmitting detection light beam 1 are detected, transmitter 302a transmitting detection light beam 2 should be located at two ipsilateral hairs
The distance between emitter is greater than the thickness of wafer to be calibrated, and the distance between detection light beam emitted is also greater than wafer to be calibrated
Thickness so that when wafer to be calibrated does not shift namely keeps vertical, the detection light beam that will not be issued to transmitter have
Barrier effect, and once wafer to be calibrated shifts, then just stops to the detection light beam of transmitter transmitting, such as stops
One of the two beams detection light beam issued in two transmitters, so that receiving sensor only receives the letter of a detection light beam
Number, to judge that wafer to be calibrated is deviated, and then the information passes to controller, controller controls detection system again
The deviation post and direction for treating calibration wafer are accurately detected, and treat calibration wafer further to control homestat
It is calibrated, is able to maintain wafer to be calibrated and is restored to normal position vertically.Once and receiving sensor receives each hair
The signal for the detection light beam that emitter is launched then can determine whether that wafer to be calibrated keeps vertical, then control it and control grabbing device
To grab wafer to be calibrated.
Optionally, the transmitter can be any suitable transmitter, such as laser emitter etc..
Illustratively, in order to be aligned wafer and grabbing device to be calibrated, receiving sensor can be made to be arranged in grabbing device
On, such as be arranged on two handgrips 203a and 203b of grabbing device.
It is noted that wafer vertical stability calibration system of the invention not only can be adapted for rinse bath, it is also suitable
For all boards vertically grabbed with wafer.
So far the introduction for completing the key component to wafer vertical stability calibration system of the invention, for complete
System it may also be desirable to other component parts, does not do repeat one by one herein.
In conclusion wafer vertical stability calibration system of the invention includes wafer homestat, the wafer
Homestat is located at the two sides of the wafer to be calibrated, and opposite with the surface of the wafer to be calibrated, and the dynamic is flat
Balance system includes the different nozzle in several positions, and the nozzle can spray liquid or gas to the surface of the wafer,
It to calibrate the position of the wafer, places the wafer vertically, guarantees that wafer is not waved when being crawled, to guarantee
Precisely crawl, while detection system can detecte direction and the angle of wafer offset to be calibrated, to judge inclined degree
Size, the nozzle of homestat can control pressure (such as water by the size of the inclined degree of wafer to be calibrated
Pressure), to change vertical position of the wafer to be calibrated in support shaft, guarantee precisely crawl, and then avoid the occurrence of transmission handgrip and grab
Change in location when taking wafer falls the problem of piece, fragment, scratch etc., improves yield and yield.
The present invention also provides a kind of using wafer vertical stability calibration system calibration wafer vertical stability above-mentioned
Method.
As an example, the method for calibration wafer vertical stability of the invention the following steps are included:
Firstly, the wafer to be calibrated is placed in the support device；
Then, using the homestat to being located in the support device and the crystalline substance to be calibrated that shifts
Circle is calibrated, so that the wafer to be calibrated is vertically placed in the support device；
Then, the wafer to be calibrated is grabbed using the grabbing device be moved to another position from a position.
In the following, method of the invention is described in detail with reference to Figure 10, wherein Figure 10 shows one implementation of the present invention
The flow chart of the wafer vertical stability calibration method of mode.
Firstly, the wafer to be calibrated is placed in the support device.The calibration wafer is placed on branch by vertical
On support arrangement, such as support shaft, and the abrasion of support shaft or it is some other it is possible due to make the position of wafer to be calibrated
It sets and shifts, in order to make the position of wafer to be calibrated restore normal, namely restore vertical state, then need to calibrate it.
Next, deviation angle and the offset direction of the wafer to be calibrated can first be detected using detection system, and will inspection
The information measured passes to the homestat.The detection system detect from horizontal direction wafer deviation post and partially
Direction and angle etc. are moved, which detects the deviation angle of the wafer to be calibrated and the method and principle of offset direction can
With reference to the corresponding contents in previous embodiment one, details are not described herein.
Wherein, what the also available detection light beam of detection system was transmitted back to is provided in the fixed substrate of detection system
Quadrant area information, related content of the content in relation to quadrant with reference to aforementioned implementation one.
Then, the homestat (can also pass through according to the deviation angle and offset direction of the wafer to be calibrated
The quadrant information directly obtained from detection system), the unlatching of the nozzle of corresponding position is controlled, is arrived with spraying liquid or gas
The wafer to be calibrated, to adjust the position of the wafer to be calibrated.
Further, the wafer to be calibrated after the detecting calibration of vertical detecting system can also be used before calibration terminates
Position it is whether vertical (namely whether normal), if detecting, the position of the wafer to be calibrated is that vertical (namely position is just
Often), then dynamic equilibrium calibration system calibration terminates, if detect the position of the wafer to be calibrated shift (namely
It is out of alignment normal), then it reuses detection system and detects deviation post and the offset direction of the wafer to be calibrated, and will test
To information pass to the homestat the step of, then the wafer to be calibrated is calibrated, until described vertical
Detecting system detect the wafer to be calibrated position be it is vertical, dynamic equilibrium calibration system calibration terminates.
In conclusion method of the invention uses wafer vertical stability calibration system above-mentioned, the wafer dynamic is flat
Balance system is located at the two sides of the wafer to be calibrated, and, the homestat opposite with the surface of the wafer to be calibrated
Including the different nozzle in several positions, the nozzle can spray liquid or gas to the surface of the wafer, with calibration
The position of the wafer places the wafer vertically, guarantees that wafer is not waved when being crawled, to guarantee precisely to grab
It takes, while detection system can detecte direction and the angle of wafer offset to be calibrated, thus judge the size of inclined degree,
The nozzle of homestat can control pressure (such as hydraulic pressure) by the size of the inclined degree of wafer to be calibrated, to change
Vertical position of the wafer to be calibrated in support shaft guarantees precisely crawl, and by after vertical detecting system testing calibration
Wafer whether be it is vertical and whether with grabbing device to it, deviation angle and the direction of wafer to be calibrated are detected if not being to continue with,
The position for recycling homestat to treat calibration wafer carries out dynamic calibration, and then avoids the occurrence of transmission handgrip crawl wafer
When change in location, fall the problem of piece, fragment, scratch etc., improve yield and yield.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (30)
1. a kind of wafer vertical stability calibration system characterized by comprising
Wafer to be calibrated；
Support device, for placing the wafer to be calibrated；
Homestat is set to the two sides of the wafer to be calibrated, and opposite with the surface of the wafer to be calibrated, described
Homestat includes the different nozzle in several positions, and the nozzle can spray liquid or gas to described to be calibrated
The surface of wafer makes the wafer to be calibrated keep vertical state to calibrate the position of the wafer to be calibrated；
Grabbing device is moved to another position from a position for grabbing the wafer to be calibrated.
2. the system as claimed in claim 1, which is characterized in that further include the fixation base positioned at the wafer two sides to be calibrated
Plate, the support device are fixed in the fixed substrate of side, and the nozzle is fixed in the fixed substrate of two sides,
The inner wall of the fixed substrate part opposite with the surface of the wafer to be calibrated is vertical plane.
3. system as claimed in claim 2, which is characterized in that further include groove body, have in the groove body and accommodate the dynamic
The space of balance system, the wafer to be calibrated and the support device, the groove body are opposite with the wafer to be calibrated
Two side walls are used as the fixed substrate.
4. system as claimed in claim 2, which is characterized in that the support device includes at least three support shafts, the branch
Axis is independent is removably mounted in the fixed substrate of side for support.
5. system as claimed in claim 4, which is characterized in that the support shaft is protruded outward from the inner wall of the fixed substrate
Partial-length, and the axis of the support shaft is perpendicular to the inner wall of the fixed substrate.
6. system as claimed in claim 4, which is characterized in that the wafer to be calibrated is placed in the support shaft, described
The supporting point of support shaft and the wafer contacts to be calibrated is respectively positioned on the circumference of the underlying semicircle of wafer to be calibrated.
7. the system as claimed in claim 1, which is characterized in that the nozzle is located at the top of the support device.
8. the system as claimed in claim 1, which is characterized in that the wafer to be calibrated includes upper and lower two semicircles, the spray
Liquid or gas are sprayed onto the upper semi-circle of the vertical wafer to be calibrated by mouth.
9. the system as claimed in claim 1, which is characterized in that projection of the nozzle on the vertical wafer to be calibrated
In the upper semi-circle of the wafer to be calibrated.
10. system as claimed in claim 9, which is characterized in that positioned at the number of the nozzle of the wafer two sides to be calibrated
Measure it is identical, and/or, the number of nozzle described in every a line is identical.
11. the system as claimed in claim 1, which is characterized in that the nozzle of every side is arranged at several rows, described in every a line
The line of spray site of the nozzle on the vertical wafer to be calibrated is parallel to each other, and is divided by the wafer to be calibrated
Upper and lower two and half diameter of a circle is parallel.
12. system as claimed in claim 11, which is characterized in that spray of the nozzle on the vertical wafer to be calibrated
Another diameter symmetry of the exit point about the to be calibrated wafer vertical with the diameter.
13. the system as claimed in claim 1, which is characterized in that the nozzle arrangement of every side is at three rows, under definition is located at
The line of spray site of the nozzle in portion on the vertical wafer to be calibrated is the first line, then first line is worn
The center of circle of the wafer to be calibrated is crossed, the line that definition is located at spray site of the nozzle at middle part on the standard wafer is
Second line, second line is parallel with first line, defines the superposed nozzle in the standard wafer
On the line of spray site be third line, vertical range between second line and first line is greater than described the
Vertical range between three lines and second line.
14. system as claimed in claim 13, which is characterized in that vertical between second line and first line
Distance is the 40% of the wafer radius to be calibrated, and the vertical range between the third line and second line is described
The 30% of wafer radius to be calibrated.
15. system as claimed in claim 13, which is characterized in that first line and its extended line and the crystalline substance to be calibrated
Intersect the upper half diameter of a circle that straight line obtained is the wafer to be calibrated in round edge.
16. system as claimed in claim 15, which is characterized in that hang down by the center of circle and with the upper half diameter of a circle
The intersection point of the radius and first line, second line and the third line of the straight wafer to be calibrated is right respectively
Answer spray site of the nozzle on the vertical wafer to be calibrated.
17. system as claimed in claim 16, which is characterized in that the nozzle positioned at the two sides of the wafer to be calibrated
Quantity is identical, and the quantity of nozzle described in every side is 9, and every a line includes 3 nozzles.
18. system as claimed in claim 17, which is characterized in that in the upper semi-circle of the wafer to be calibrated, described half
The two sides of diameter are respectively distributed there are three spray site of the nozzle on the wafer to be calibrated, and three spray sites are located at
On first line, second line and the third line, radius where the spray site on first line
It is 30 degree with the angle where the spray site on second line between radius, the injection on second line
Angle where radius where point and the projection on the third line between radius is 30 degree.
19. the system as claimed in claim 1, which is characterized in that positioned at the crystal column surface two sides to be calibrated nozzle one by one
Relatively, projection of the nozzle being oppositely arranged on the crystal column surface to be calibrated is overlapped.
20. the system as described in one of claim 1 to 19, which is characterized in that the fortune of liquid or gas that the nozzle sprays
Dynamic rail mark is straight line, and the straight line is perpendicular to the surface of the vertical wafer to be calibrated, and the nozzle is described in vertical to school
Spray site on quasi-crystalline substance circle coincides with the projection on each comfortable vertical wafer to be calibrated of the nozzle.
21. the system as claimed in claim 1, which is characterized in that the system also includes detection system, the detection system is used
In the angle and direction for detecting the wafer offset to be calibrated.
22. system as claimed in claim 21, which is characterized in that the detection system includes transmitter and sensor, described
Transmitter for emit detection light beam arrive the wafer to be calibrated, the sensor be used for incude the detection light beam from it is described to
The light being transmitted back on calibration wafer.
23. the system as claimed in claim 22, which is characterized in that the transmitter is laser emitter, the detection light beam
For laser.
24. the system as claimed in claim 22, which is characterized in that the transmitter is emitted to the detection of the wafer to be calibrated
The incident direction of light beam is vertical with the vertical surface of the wafer to be calibrated.
25. the system as claimed in claim 1, which is characterized in that the grabbing device includes two handgrips, described two handgrips
It is arranged with capable of moving towards or be moved away from, described two handgrips clamp the wafer to be calibrated when moving towards.
26. the system as claimed in claim 1, which is characterized in that the system also includes vertical detecting systems, for detecting
The deviation post of wafer to be calibrated is stated, confirms whether the wafer to be calibrated is vertical.
27. system as claimed in claim 26, which is characterized in that the vertical detecting system includes transmitter and reception sensing
Two transmitters are respectively arranged in device, the marginal position in wafer two sides to be calibrated, and each transmitter can emit vertical detection light
Beam, in the case where no blocking, the receiving sensor that detection light beam is arranged on top is received.
28. a kind of method using the system calibration wafer vertical stability as described in one of claim 1 to 27, feature exist
In, which comprises
The wafer to be calibrated is placed in the support device；
School is carried out to the wafer to be calibrated in the support device and to shift is located at using the homestat
Standard, so that the wafer to be calibrated is vertically placed in the support device；
The wafer to be calibrated, which is grabbed, using the grabbing device is moved to another position from a position.
29. method as claimed in claim 28, which is characterized in that the wafer to be calibrated is being placed in the support device
It is further comprising the steps of before being calibrated using the homestat after upper:
Deviation angle and the offset direction of the wafer to be calibrated are detected using detection system, and the information that will test passes to
The homestat；
Deviation angle and offset direction of the homestat according to the wafer to be calibrated, control the described of corresponding position
The unlatching of nozzle, to spray liquid or gas to the wafer to be calibrated, to adjust the position of the wafer to be calibrated.
30. method as claimed in claim 29, which is characterized in that after the cali-bration, grabbed using the grabbing device
It is further comprising the steps of before the wafer to be calibrated is moved to another position from a position:
Whether the position using the wafer to be calibrated after the detecting calibration of vertical detecting system is vertical, if detecting described to school
The position of quasi-crystalline substance circle be it is vertical, then dynamic equilibrium calibration system calibration terminates；If detecting the wafer to be calibrated
Position shifts, then reuses deviation post and offset direction that detection system detects the wafer to be calibrated, and will inspection
The step of information measured passes to the homestat, then the wafer to be calibrated is calibrated, until described perpendicular
Straight detecting system detect the wafer to be calibrated position be it is vertical, the dynamic equilibrium calibration system calibration terminates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710602295.3A CN109285804B (en) | 2017-07-21 | 2017-07-21 | Wafer vertical stability calibration system and method for calibrating wafer vertical stability |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710602295.3A CN109285804B (en) | 2017-07-21 | 2017-07-21 | Wafer vertical stability calibration system and method for calibrating wafer vertical stability |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110391159A (en) * | 2019-07-31 | 2019-10-29 | 沛顿科技（深圳）有限公司 | Wafer level packaging map error correction system solution |
| CN111640694A (en) * | 2020-06-01 | 2020-09-08 | 上海精测半导体技术有限公司 | Calibration and monitoring method of wafer loading system and wafer loading system |
| CN112185873A (en) * | 2020-09-23 | 2021-01-05 | 华虹半导体(无锡)有限公司 | Calibration tool for calibrating wafer stopper of conveying clamping arm |
| CN112435955A (en) * | 2019-08-26 | 2021-03-02 | 合肥晶合集成电路股份有限公司 | Supporting device for wafer splinters and fixing method thereof |
| CN113363197A (en) * | 2019-10-30 | 2021-09-07 | 长江存储科技有限责任公司 | Method for calibrating verticality of particle beam and system applied to semiconductor manufacturing process |
| CN113675123A (en) * | 2021-07-29 | 2021-11-19 | 长鑫存储技术有限公司 | Wafer calibration device, method and system |
| CN114220748A (en) * | 2022-02-23 | 2022-03-22 | 杭州众硅电子科技有限公司 | Dynamic detection device and chemical mechanical planarization equipment |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0945750A (en) * | 1995-07-26 | 1997-02-14 | Hitachi Ltd | Holding member of plate object and rotary treatment device with it |
| JP2000164689A (en) * | 1998-11-27 | 2000-06-16 | Dainippon Screen Mfg Co Ltd | Substrate-holding jig and substrate-processing device |
| CN101114581A (en) * | 2006-07-24 | 2008-01-30 | 芝浦机械电子株式会社 | Apparatus for treating substrates |
| CN102376608A (en) * | 2010-08-25 | 2012-03-14 | 无锡华润上华半导体有限公司 | Wafer transfer method and device |
| WO2012165142A1 (en) * | 2011-06-02 | 2012-12-06 | タツモ株式会社 | Alignment device, and alignment method |
| CN105957823A (en) * | 2016-06-29 | 2016-09-21 | 昆山国显光电有限公司 | Substrate deviation correction apparatus, substrate deviation correction method, and carrier platform equipped with substrate deviation correction apparatus |
| TW201636150A (en) * | 2015-04-01 | 2016-10-16 | Jian-Chang Chen | Air floating type six degree-of-freedom fine-tune method and device thereof |
-
2017
- 2017-07-21 CN CN201710602295.3A patent/CN109285804B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0945750A (en) * | 1995-07-26 | 1997-02-14 | Hitachi Ltd | Holding member of plate object and rotary treatment device with it |
| JP2000164689A (en) * | 1998-11-27 | 2000-06-16 | Dainippon Screen Mfg Co Ltd | Substrate-holding jig and substrate-processing device |
| CN101114581A (en) * | 2006-07-24 | 2008-01-30 | 芝浦机械电子株式会社 | Apparatus for treating substrates |
| CN102376608A (en) * | 2010-08-25 | 2012-03-14 | 无锡华润上华半导体有限公司 | Wafer transfer method and device |
| WO2012165142A1 (en) * | 2011-06-02 | 2012-12-06 | タツモ株式会社 | Alignment device, and alignment method |
| TW201636150A (en) * | 2015-04-01 | 2016-10-16 | Jian-Chang Chen | Air floating type six degree-of-freedom fine-tune method and device thereof |
| CN105957823A (en) * | 2016-06-29 | 2016-09-21 | 昆山国显光电有限公司 | Substrate deviation correction apparatus, substrate deviation correction method, and carrier platform equipped with substrate deviation correction apparatus |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110391159A (en) * | 2019-07-31 | 2019-10-29 | 沛顿科技（深圳）有限公司 | Wafer level packaging map error correction system solution |
| CN110391159B (en) * | 2019-07-31 | 2021-06-25 | 沛顿科技（深圳）有限公司 | Wafer packaging map error correction system solution |
| CN112435955B (en) * | 2019-08-26 | 2024-04-16 | 合肥晶合集成电路股份有限公司 | Wafer crack supporting device and fixing method thereof |
| CN112435955A (en) * | 2019-08-26 | 2021-03-02 | 合肥晶合集成电路股份有限公司 | Supporting device for wafer splinters and fixing method thereof |
| CN113363197B (en) * | 2019-10-30 | 2023-11-03 | 长江存储科技有限责任公司 | Method for calibrating perpendicularity of particle beam and system applied to semiconductor manufacturing process |
| CN113363197A (en) * | 2019-10-30 | 2021-09-07 | 长江存储科技有限责任公司 | Method for calibrating verticality of particle beam and system applied to semiconductor manufacturing process |
| CN111640694B (en) * | 2020-06-01 | 2021-09-28 | 上海精测半导体技术有限公司 | Calibration and monitoring method of wafer loading system and wafer loading system |
| CN111640694A (en) * | 2020-06-01 | 2020-09-08 | 上海精测半导体技术有限公司 | Calibration and monitoring method of wafer loading system and wafer loading system |
| CN112185873B (en) * | 2020-09-23 | 2022-07-05 | 华虹半导体(无锡)有限公司 | Calibration tool for calibrating wafer stopper of conveying clamping arm |
| CN112185873A (en) * | 2020-09-23 | 2021-01-05 | 华虹半导体(无锡)有限公司 | Calibration tool for calibrating wafer stopper of conveying clamping arm |
| CN113675123A (en) * | 2021-07-29 | 2021-11-19 | 长鑫存储技术有限公司 | Wafer calibration device, method and system |
| CN113675123B (en) * | 2021-07-29 | 2024-01-05 | 长鑫存储技术有限公司 | Wafer calibration device, method and system |
| CN114220748A (en) * | 2022-02-23 | 2022-03-22 | 杭州众硅电子科技有限公司 | Dynamic detection device and chemical mechanical planarization equipment |
| CN116000391A (en) * | 2023-01-07 | 2023-04-25 | 中国航空制造技术研究院 | Electro-hydraulic beam processing electrode shadow calibration and adjustment device and method |
| CN116000391B (en) * | 2023-01-07 | 2024-06-07 | 中国航空制造技术研究院 | Electro-hydraulic beam processing electrode shadow calibration and adjustment device and method |
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