CN109277933A - A kind of silicon wafer outer round surface burnishing device and polishing method - Google Patents
A kind of silicon wafer outer round surface burnishing device and polishing method Download PDFInfo
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- CN109277933A CN109277933A CN201811218096.3A CN201811218096A CN109277933A CN 109277933 A CN109277933 A CN 109277933A CN 201811218096 A CN201811218096 A CN 201811218096A CN 109277933 A CN109277933 A CN 109277933A
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- swing rod
- burnishing device
- polishing
- round surface
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 128
- 239000010703 silicon Substances 0.000 title claims abstract description 128
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 238000005498 polishing Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000004744 fabric Substances 0.000 claims abstract description 30
- 238000009434 installation Methods 0.000 claims abstract description 17
- 238000007517 polishing process Methods 0.000 claims abstract description 4
- 230000009471 action Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 claims description 4
- 229920000297 Rayon Polymers 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 230000003068 static effect Effects 0.000 claims description 3
- 230000008859 change Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000001788 irregular Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
- B24B29/04—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces for rotationally symmetrical workpieces, e.g. ball-, cylinder- or cone-shaped workpieces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/02—Frames; Beds; Carriages
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/04—Headstocks; Working-spindles; Features relating thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
- B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention relates to silicon wafer polishing apparatus fields, it is desirable to provide a kind of silicon wafer outer round surface burnishing device and polishing method.The device includes burnishing device ontology, driving assembly and polishing ramming head；The burnishing device ontology includes the identical circular upper mounting plate of size and circular lower installation board；Driving assembly is able to achieve the rotation of the forward and reverse of burnishing device；It polishes ramming head and includes ramming head under 4 lateral ramming heads, 4 upthrow ramming heads and 4, be staggeredly evenly arranged in burnishing device ontology outer rim；Polishing cloth is equipped on upthrow ramming head and the lower poliss for throwing ramming head.The present invention makes polishing cloth uniformly act on silicon wafer outer round surface using the centrifugal force that burnishing device rotation generates, the active force of silicon wafer outer round surface can be applied to by changing the rotational velocity change of burnishing device simultaneously, the adjusting for being conducive to polishing process greatly improves the polishing efficiency of silicon wafer outer round surface.It is compact-sized, it is simple and practical, the quality of finish of silicon wafer outer round surface can be effectively improved.
Description
Technical field
The invention belongs to silicon wafer polishing apparatus fields, and in particular to a kind of silicon wafer outer round surface burnishing device and polishing side
Method.
Background technique
Semiconductor silicon wafer piece is the main substrate material for manufacturing super large-scale integration, with flying for semiconductor industry
Speed development, it is also higher and higher to the required precision of substrate material, especially the outer round surface state of silicon wafer is increasingly stringenter.It is right
It generally when substrate is processed is needed to silicon wafer for 6 inches of diameter or more especially 8 inches and 12 inches silicon polished
Outer round surface be processed by shot blasting, lacked so that it is guaranteed that not generating skid wire or extension fault etc. at the silicon chip edge that is delayed outside
It falls into, and then improves epitaxial wafer or device yield.The edge polishing of silicon wafer is generally completed in independent equipment, is thrown using chemistry
The method of light realizes the mistake of chemically mechanical polishing using polishing fluid and polishing cloth under certain temperature and the process conditions of revolving speed
Journey.It is the step process in entire silicon chip edge polishing to the polishing of the silicon wafer plane of reference, the silicon wafer plane of reference is generally also to be referred to as flat
The side plane of reference, this plane of reference be it is straight, when carrying out edge polishing, the polishing of the plane of reference everywhere is consistent, after polishing
Surface roughness having the same.To the outer round surface uniform polish of silicon wafer, make the upper part of outer round surface, middle section and
Lower part polishing is consistent, just can guarantee that the polishing removal amount of each point on this plane of reference is identical in this way, has equally micro-
Roughness.It, will in postorder epitaxial process if a certain partially polished degree of outer round surface is small, damaging layer does not completely remove
The problem of being readily formed multiple grain aggregation.
In traditional plane of reference polishing method, one is polishing cloth and silicon wafer outer round surface localized contact, polishing cloth rotations
Direction and the silicon wafer plane of reference are tangent, although the defect of this method is can to make the angle of the relative rotation of polishing cloth and the plane of reference
It is fixed, but due to being localized contact and not can guarantee the polishing on entire outer round surface everywhere uniform.Another method is polishing
Cloth and outer round surface Full connected, but since the relative motion angle of polishing cloth and the silicon wafer plane of reference is not fixed, during the polishing process
The effect fluctuation for being applied to silicon chip surface is larger, therefore is easy the throwing for making silicon wafer outer round surface irregular, various angles occur
Light scratches striped, to reduce the roughness of silicon wafer outer round surface.
Summary of the invention
The technical problem to be solved by the present invention is to overcome deficiency in the prior art, provide a kind of silicon wafer outer round surface throwing
Electro-optical device and polishing method.
In order to solve the above technical problems, the solution that the present invention uses is:
A kind of silicon wafer outer round surface burnishing device, including burnishing device ontology, driving assembly and polishing ramming head are provided；
The burnishing device ontology includes the identical circular upper mounting plate of size and circular lower installation board；Upper mounting plate
Pass through 6 support columns being evenly distributed with the outer rim of lower installation board to be attached；Upper mounting plate upper surface center passes through connection
Flange is connect with driving assembly, and driving assembly is controlled using variable-frequency motor, is able to achieve the rotation of the forward and reverse of burnishing device；
Lower installation board upper surface center is additionally provided with silicon wafer fixation kit, for placing and fixing silicon wafer；It is equipped in silicon wafer fixation kit true
Suction disk, so that silicon wafer be fixed by vacuum suction；Silicon wafer fixation kit connection wire rod, and carried out by servo motor
Driving, enables silicon wafer fixation kit to move reciprocatingly in the vertical direction；
Polishing ramming head includes 12 swingable ramming heads, including 4 lateral ramming heads, is thrown under 4 upthrow ramming heads and 4
Head is staggeredly evenly arranged in burnishing device ontology outer rim；
Lateral ramming head, including swing rod mounting blocks；Two of them swing rod mounting blocks are fixedly arranged on upper mounting plate outer rim, two swing rods
Mounting blocks are fixedly arranged on lower installation board outer rim, and swing rod mounting blocks are interior to connect a swing rod by pivot pin, and swing rod can be relative to vertical side
It is swung to two sides；The top and bottom of swing rod are respectively equipped with clump weight and poliss；Divide on swing rod mounting blocks upper and lower end face
It She You not upper limit position block and lower position block；
Upthrow ramming head, including swing rod mounting blocks；Swing rod mounting blocks are fixedly arranged on upper mounting plate outer rim, pass through in swing rod mounting blocks
Pivot pin connects a swing rod, and swing rod can be swung relative to vertical direction two sides；The top and bottom of swing rod are respectively equipped with throwing
Light block and clump weight；Swing rod mounting blocks are respectively equipped with lower position block and upper limit position block on upper and lower end face；
Lower throwing ramming head, including swing rod mounting blocks；Swing rod mounting blocks are fixedly arranged on lower installation board outer rim, pass through in swing rod mounting blocks
Pivot pin connects a swing rod, and swing rod can be swung relative to vertical direction two sides；The top and bottom of swing rod, which are respectively equipped with, matches
Pouring weight and poliss；Swing rod mounting blocks are respectively equipped with upper limit position block and lower position block on upper and lower end face；
Polishing cloth is equipped on poliss.
As an improvement polishing cloth is set on poliss by viscose glue.
The present invention also provides a kind of method for carrying out the polishing of silicon wafer outer round surface using above-mentioned apparatus, steps are as follows:
(1) it firstly, silicon wafer is placed on silicon wafer fixation kit by manipulator, and is fixed by vacuum chuck；At this point,
Burnishing device is static, and for each ramming head under the action of clump weight is self-possessed, swing rod swings to maximum angle, and silicon wafer is made to have enough skies
Between from the lower polishing initial point position into burnishing device, that is, start the position polished to silicon chip edge；
(2) it after silicon wafer reaches polishing initial point position, is required according to polishing process, burnishing device is becoming in driving assembly
It is rotated under frequency motor driven, the clump weight on each ramming head generates centrifugal force F during burnishing device rotates, and keeps polishing cloth tight
It is close to close silicon wafer outer round surface；
(3) burnishing device rotates under the driving of driving assembly, fixes at this point, silicon wafer is fixed on silicon wafer by vacuum chuck
On component, effect is not rotated, makes to generate relative velocity n between polishing cloth and silicon wafer outer round surface in this way, and in centrifugal force F
Under the action of, a pressure F ' is applied by outer round surface of the lever principle to silicon wafer, polishing cloth is equably to silicon wafer outer circle table
Face is polished；
(4) while burnishing device rotates, silicon wafer is done back and forth under the driving of servo motor and screw rod in vertical direction
Movement swings upthrow ramming head and the lower swing rod for throwing ramming head around pin shaft, polishing cloth is enable to be close to the outer round surface of silicon wafer；
(5) outer round surface of silicon wafer, which polishes, completes, and burnishing device stops rotating, each ramming head under clump weight Gravitative Loads,
Swing rod swings to maximum angle, and silicon wafer is moved downwardly to initial position, and vacuum chuck stops working, and silicon wafer is transported to it by manipulator
His station.
As an improvement the burnishing device ontology that the pressure F ' for being applied to silicon wafer outer round surface is controlled by variable-frequency motor
Rotation speed controlled, calculation formula is as follows:
F '=ω2·R·m；
R: clump weight radius of turn；M: clump weight quality；ω: the angular velocity of rotation of burnishing device ontology.
As an improvement variable-frequency motor revolving speed is 50r/min~900r/min.
As an improvement the movement travel of silicon wafer is ± 9mm.
As an improvement the concentricity of silicon wafer is in 0.1mm hereinafter, when burnishing device rotates when silicon wafer fixation kit rotates
Concentricity with silicon wafer is in 0.05mm or less.
Compared with prior art, the solution have the advantages that:
1, the present invention makes polishing cloth uniformly act on silicon wafer outer round surface using the centrifugal force that burnishing device rotation generates,
The active force of silicon wafer outer round surface can be applied to by changing the rotational velocity change of burnishing device simultaneously, is conducive to buffer
The adjusting of skill greatly improves the polishing efficiency of silicon wafer outer round surface.
2, structure of the invention is compact, simple and practical.The ramming head of three kinds of swingable ramming heads contacts silicon wafer outer round surface respectively
Upper part, middle section and lower part, the mode of this Full connected ensure that polishing cloth and silicon wafer outer round surface in relative motion
When be in tangent state always, be not in irregular draw to make the polishing uniformity at each position of the silicon wafer plane of reference
Wound, can effectively improve the quality of finish of silicon wafer outer round surface.
Detailed description of the invention
Fig. 1 is cross-sectional view under operating status of the present invention；
Fig. 2 is normal axomometric drawing of the present invention；
Fig. 3 is top view of the present invention；
Fig. 4 is ramming head schematic diagram of the present invention；
Fig. 5 is silicon wafer outer round surface of the present invention laterally polishing schematic diagram；
Fig. 6 is that silicon wafer outer circle of the present invention upper surface polishes schematic diagram；
Fig. 7 is that silicon wafer outer circle of the present invention lower surface polishes schematic diagram；
Fig. 8 is polishing cloth movement locus schematic diagram of the present invention.
Appended drawing reference: 1- driving assembly, 2- burnishing device, 3- silicon wafer fixation kit, 4- connecting flange, 5- upper mounting plate,
6- lower installation board, 7- support column, 8- transverse direction ramming head, 9- upthrow ramming head, ramming head under 10-, 11- silicon wafer, 12- clump weight, 13- pendulum
Bar, 14- upper limit position block, 15- swing rod mounting blocks, 16- lower position block, 17- pin shaft, 18- polishing cloth.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in detail.
As shown in Fig. 2, silicon wafer outer round surface burnishing device includes burnishing device ontology, driving assembly and polishing ramming head.
Burnishing device ontology includes the identical circular upper mounting plate 5 of size and circular lower installation board 6.Upper mounting plate 5
Pass through 6 support columns 7 circumferentially laid with the outer rim of lower installation board 6 to be attached.5 upper surface center of upper mounting plate passes through company
Acting flange 4 is connect with driving assembly 1, and driving assembly 1 is controlled using variable-frequency motor, is able to achieve the forward and reverse of burnishing device
Rotation.6 upper surface center of lower installation board is additionally provided with silicon wafer fixation kit 3, for placing and fixing silicon wafer 11.Silicon wafer fixation kit
Vacuum chuck is equipped in 3, so that silicon wafer 11 be fixed by vacuum suction.3 connection wire rod of silicon wafer fixation kit, and pass through
Servo motor is driven, and silicon wafer fixation kit 3 is moved reciprocatingly in the vertical direction.
Polishing ramming head includes throwing ramming head 10 under 4 lateral 8,4 upthrow ramming heads 9 of ramming head and 4, is staggeredly evenly arranged in
Burnishing device ontology outer rim.
Lateral ramming head 8, including swing rod mounting blocks 15.Two of them swing rod mounting blocks 15 are fixedly arranged on 5 outer rim of upper mounting plate, separately
Two swing rod mounting blocks 15 are fixedly arranged on 6 outer rim of lower installation board, pass through pivot pin one swing rod 13 of connection, swing rod 13 in swing rod mounting blocks 15
It can be swung relative to vertical direction two sides.The top and bottom of swing rod 13 are respectively equipped with clump weight 12 and poliss.Pendulum
Bar mounting blocks are respectively equipped with upper limit position block 14 and lower position block 16 on 15 upper and lower end face.
Upthrow ramming head 9, including swing rod mounting blocks 15.Swing rod mounting blocks 15 are fixedly arranged on 5 outer rim of upper mounting plate, swing rod mounting blocks
A swing rod 13 is connected by pivot pin in 15, swing rod 13 can be swung relative to vertical direction two sides.The upper end of swing rod 13 with
Lower end is respectively equipped with poliss and clump weight 12.Swing rod mounting blocks are respectively equipped with lower position block 16 and upper limit on 15 upper and lower end face
Block 14.
Lower throwing ramming head 10, including swing rod mounting blocks 15.Swing rod mounting blocks 15 are fixedly arranged on 6 outer rim of lower installation board, swing rod installation
A swing rod 13 is connected by pivot pin in block 15, swing rod 13 can be swung relative to vertical direction two sides.The upper end of swing rod 13
Clump weight 12 and poliss are respectively equipped with lower end.Swing rod mounting blocks are respectively equipped with upper limit position block 14 and lower limit on 15 upper and lower end face
Position block 16.
As shown in figure 3, lateral ramming head 8, upthrow ramming head 9 and lower throwing ramming head 10 are mounted on upper mounting plate 5 in symmetric mode
On lower installation board 6.Wherein, the angle between 4 lateral ramming heads 8 is 90 °, and the angle between 4 upthrow ramming heads 9 is 60 °, 4
A lower angle thrown between ramming head 10 is 60 °, meanwhile, 12 ramming heads are uniformly distributed in horizontal throwing, upthrow, lower throwing sequence.
Polishing cloth 18 is bonded with by viscose glue on poliss.
The present invention also provides a kind of method for carrying out the polishing of silicon wafer outer round surface using above-mentioned apparatus, steps are as follows:
(1) it firstly, silicon wafer 11 is placed on silicon wafer fixation kit 3 by manipulator, and is fixed by vacuum chuck；This
When, burnishing device 2 is static, and for each ramming head under the action of clump weight 12 is self-possessed, swing rod 13 swings to maximum angle, has silicon wafer 11
There are enough spaces from the lower polishing initial point position into burnishing device 2, that is, starts the position polished to silicon chip edge
It sets；
(2) it after silicon wafer 11 reaches polishing initial point position, is required according to buffer's invention skill, burnishing device 2 is driving
Component 1 is rotated under being driven by variable-frequency motor with certain revolving speed, the mistake that the clump weight 12 on each ramming head is rotated in burnishing device 2
Centrifugal force F is generated in journey, and polishing cloth 18 is made tightly to be bonded 11 outer round surface of silicon wafer；
(3) burnishing device rotates under the driving of driving assembly 1, at this point, silicon wafer 11 is fixed on silicon wafer by vacuum chuck
On fixation kit 3, effect is not rotated, makes to generate relative velocity n between 11 outer round surface of polishing cloth 18 and silicon wafer in this way, and
Under the action of centrifugal force F, poliss applies a pressure F ', polishing cloth 18 by outer round surface of the lever principle to silicon wafer 11
Equably silicon wafer outer round surface is polished；
(4) while burnishing device 2 rotates, silicon wafer 11 is done under the driving in servo motor and screw rod in vertical direction
It moves back and forth, swings upthrow ramming head 9 and the lower swing rod 13 for throwing ramming head 10 around pin shaft 17, polishing cloth 18 is enable to be close to silicon wafer
11 outer round surface；
(5) outer round surface of silicon wafer 11, which polishes, completes, and burnishing device 2 stops rotating, and each ramming head is in clump weight 12 from recast
Under, swing rod 13 swings to maximum angle, and silicon wafer 11 is moved downwardly to initial position, and vacuum chuck stops working, and manipulator is by silicon
Piece 11 is transported to other stations.
As shown in Fig. 5, Fig. 6, Fig. 7, it is applied to the polishing that the pressure F ' of 11 outer round surface of silicon wafer is controlled by variable-frequency motor
The rotation speed of device noumenon is controlled, and calculation formula is as follows:
F '=ω2·R·m；
R: 12 radius of turn of clump weight；M: 12 mass of clump weight；ω: the angular velocity of rotation of burnishing device ontology.
As shown in figure 8, burnishing device 2 during rotation, when the swing rod 13 of upthrow ramming head 9 is swung around pin shaft 17, is thrown
The motion profile of light cloth 18 is tightly bonded the outer round surface of silicon wafer 11 always, substantially increases the polishing matter of 11 outer round surface of silicon wafer
Amount.
Wherein, variable-frequency motor revolving speed is 50r/min~900r/min.The movement travel of silicon wafer is ± 9mm.Silicon wafer fixes group
Part 3 rotate when silicon wafer concentricity in 0.1mm hereinafter, burnishing device rotate when and silicon wafer concentricity in 0.05mm or less.
It is finally noted that the above enumerated are only specific embodiments of the present invention.It is clear that the invention is not restricted to
Upper embodiment can also have many variations.Those skilled in the art can from present disclosure directly export or
All deformations associated, are considered as protection scope of the present invention.
Claims (7)
1. a kind of silicon wafer outer round surface burnishing device, which is characterized in that thrown including burnishing device ontology, driving assembly and polishing
Head；
The burnishing device ontology includes the identical circular upper mounting plate of size and circular lower installation board；Upper mounting plate is under
The outer rim of mounting plate passes through 6 support columns being evenly distributed and is attached；Upper mounting plate upper surface center passes through connecting flange
It is connect with driving assembly, driving assembly is controlled using variable-frequency motor, is able to achieve the rotation of the forward and reverse of burnishing device；Lower peace
Loading board upper surface center is additionally provided with silicon wafer fixation kit, for placing and fixing silicon wafer；Vacuum is equipped in silicon wafer fixation kit to inhale
Disk, so that silicon wafer be fixed by vacuum suction；Silicon wafer fixation kit connection wire rod, and driven by servo motor
It is dynamic, silicon wafer fixation kit is moved reciprocatingly in the vertical direction；
The polishing ramming head includes ramming head under 4 lateral ramming heads, 4 upthrow ramming heads and 4, is staggeredly evenly arranged in polishing
Device noumenon outer rim；
The transverse direction ramming head, including swing rod mounting blocks；Two of them swing rod mounting blocks are fixedly arranged on upper mounting plate outer rim, two swing rods
Mounting blocks are fixedly arranged on lower installation board outer rim, and swing rod mounting blocks are interior to connect a swing rod by pivot pin, and swing rod can be relative to vertical side
It is swung to two sides；The top and bottom of swing rod are respectively equipped with clump weight and poliss；Divide on swing rod mounting blocks upper and lower end face
It She You not upper limit position block and lower position block；
The upthrow ramming head, including swing rod mounting blocks；Swing rod mounting blocks are fixedly arranged on upper mounting plate outer rim, pass through in swing rod mounting blocks
Pivot pin connects a swing rod, and swing rod can be swung relative to vertical direction two sides；The top and bottom of swing rod are respectively equipped with throwing
Light block and clump weight；Swing rod mounting blocks are respectively equipped with lower position block and upper limit position block on upper and lower end face；
The lower throwing ramming head, including swing rod mounting blocks；Swing rod mounting blocks are fixedly arranged on lower installation board outer rim, pass through in swing rod mounting blocks
Pivot pin connects a swing rod, and swing rod can be swung relative to vertical direction two sides；The top and bottom of swing rod, which are respectively equipped with, matches
Pouring weight and poliss；Swing rod mounting blocks are respectively equipped with upper limit position block and lower position block on upper and lower end face；
Polishing cloth is equipped on the poliss.
2. the apparatus according to claim 1, which is characterized in that polishing cloth is set on poliss by viscose glue.
3. a kind of method for carrying out the polishing of silicon wafer outer round surface using device described in claim 1, which is characterized in that step
Are as follows:
(1) it firstly, silicon wafer is placed on silicon wafer fixation kit by manipulator, and is fixed by vacuum chuck；At this point, polishing
Device is static, each ramming head clump weight be self-possessed under the action of, swing rod swings to maximum angle, make silicon wafer have enough spaces from
The lower polishing initial point position into burnishing device, that is, start the position polished to silicon chip edge；
(2) it after silicon wafer reaches polishing initial point position, is required according to polishing process, burnishing device is in driving assembly in variable-frequency electric
Machine driving is lower to rotate, and the clump weight on each ramming head generates centrifugal force F during burnishing device rotates, and pastes polishing cloth tightly
Close silicon wafer outer round surface；
(3) burnishing device rotates under the driving of driving assembly, at this point, silicon wafer is fixed on silicon wafer fixation kit by vacuum chuck
On, effect is not rotated, makes to generate relative velocity n between polishing cloth and silicon wafer outer round surface in this way, and in the work of centrifugal force F
Under, poliss applies a pressure F ' by outer round surface of the lever principle to silicon wafer, and polishing cloth is equably to silicon wafer outer circle
Surface is polished；
(4) while burnishing device rotates, silicon wafer moves reciprocatingly under the driving of servo motor and screw rod in vertical direction,
It swings upthrow ramming head and the lower swing rod for throwing ramming head around pin shaft, polishing cloth is enable to be close to the outer round surface of silicon wafer；
(5) outer round surface of silicon wafer, which polishes, completes, and burnishing device stops rotating, and each ramming head is under clump weight Gravitative Loads, swing rod
Maximum angle is swung to, silicon wafer is moved downwardly to initial position, and vacuum chuck stops working, and silicon wafer is transported to other works by manipulator
Position.
4. according to the method described in claim 3, it is characterized in that, the pressure F ' for being applied to silicon wafer outer round surface passes through variable-frequency electric
The rotation speed of the burnishing device ontology of machine control is controlled, and calculation formula is as follows:
F '=ω2·R·m；
R: clump weight radius of turn；M: clump weight quality；ω: the angular velocity of rotation of burnishing device ontology.
5. according to the method described in claim 3, it is characterized in that, variable-frequency motor revolving speed is 50r/min~900r/min.
6. according to the method described in claim 3, it is characterized in that, the movement travel of silicon wafer is ± 9mm.
7. according to the method described in claim 3, it is characterized in that, existing when silicon wafer fixation kit moves with the concentricity of silicon wafer
0.1mm hereinafter, burnishing device rotate when and silicon wafer concentricity in 0.05mm or less.
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| CN201811218096.3A CN109277933A (en) | 2018-10-18 | 2018-10-18 | A kind of silicon wafer outer round surface burnishing device and polishing method |
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| CN201811218096.3A CN109277933A (en) | 2018-10-18 | 2018-10-18 | A kind of silicon wafer outer round surface burnishing device and polishing method |
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| CN109794837A (en) * | 2019-03-19 | 2019-05-24 | 陕西科技大学 | A kind of polishing machine being exclusively used in metal 3D printing substrate |
| CN111515823A (en) * | 2020-04-29 | 2020-08-11 | 枣庄职业学院 | Building is with building frame steel pipe outward appearance cement clean-up equipment |
| CN111733421A (en) * | 2020-07-08 | 2020-10-02 | 罗远菊 | Chemical polishing machine for metal processing |
| CN111922888A (en) * | 2020-08-11 | 2020-11-13 | 西安奕斯伟硅片技术有限公司 | Edge polishing apparatus and polishing method |
| CN114619299A (en) * | 2022-03-23 | 2022-06-14 | 成都飞机工业（集团）有限责任公司 | Grinding device for outer cylindrical surface |
| CN115922484A (en) * | 2022-12-14 | 2023-04-07 | 西安奕斯伟材料科技有限公司 | Edge polishing apparatus and edge polishing method |
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| JP2009297842A (en) * | 2008-06-13 | 2009-12-24 | Bbs Kinmei:Kk | Polishing apparatus and polishing method for workpiece peripheral portion |
| CN106670938A (en) * | 2015-11-10 | 2017-05-17 | 有研半导体材料有限公司 | Silicon wafer edge polishing device |
| KR20180005415A (en) * | 2016-07-06 | 2018-01-16 | 에스케이실트론 주식회사 | Edge polishing apparatus and edge polishing method |
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| WO1993015878A1 (en) * | 1992-02-12 | 1993-08-19 | Sumitomo Metal Industries Limited | Abrading device and abrading method employing the same |
| JP2009297842A (en) * | 2008-06-13 | 2009-12-24 | Bbs Kinmei:Kk | Polishing apparatus and polishing method for workpiece peripheral portion |
| CN106670938A (en) * | 2015-11-10 | 2017-05-17 | 有研半导体材料有限公司 | Silicon wafer edge polishing device |
| KR20180005415A (en) * | 2016-07-06 | 2018-01-16 | 에스케이실트론 주식회사 | Edge polishing apparatus and edge polishing method |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109794837A (en) * | 2019-03-19 | 2019-05-24 | 陕西科技大学 | A kind of polishing machine being exclusively used in metal 3D printing substrate |
| CN111515823A (en) * | 2020-04-29 | 2020-08-11 | 枣庄职业学院 | Building is with building frame steel pipe outward appearance cement clean-up equipment |
| CN111515823B (en) * | 2020-04-29 | 2021-08-20 | 枣庄职业学院 | Building is with building frame steel pipe outward appearance cement clean-up equipment |
| CN111733421A (en) * | 2020-07-08 | 2020-10-02 | 罗远菊 | Chemical polishing machine for metal processing |
| CN111733421B (en) * | 2020-07-08 | 2022-04-12 | 福建省鈊美机械科技有限公司 | Chemical polishing machine for metal processing |
| CN111922888A (en) * | 2020-08-11 | 2020-11-13 | 西安奕斯伟硅片技术有限公司 | Edge polishing apparatus and polishing method |
| CN114619299A (en) * | 2022-03-23 | 2022-06-14 | 成都飞机工业（集团）有限责任公司 | Grinding device for outer cylindrical surface |
| CN115922484A (en) * | 2022-12-14 | 2023-04-07 | 西安奕斯伟材料科技有限公司 | Edge polishing apparatus and edge polishing method |
| CN115922484B (en) * | 2022-12-14 | 2024-04-12 | 西安奕斯伟材料科技股份有限公司 | Edge polishing device and edge polishing method |
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