KR20180005415A - Edge polishing apparatus and edge polishing method - Google Patents

Abstract

Embodiments of the present invention realize a mechanism for processing a wafer edge by differentiating a processing angle, which includes a basic angle of a polishing unit and a variable angle reflecting a shape angle of a wafer, according to a wafer product group for each customer. Therefore, according to embodiments of the present invention, overflushing is prevented, and the manufacturing costs of a new plate is reduced by applying different processing angles to different wafer product groups for each customer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an edge polishing apparatus and an edge polishing method,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an edge polishing apparatus and an edge polishing method, and more particularly, to an edge polishing apparatus and an edge polishing method for improving the processing accuracy of a wafer edge.

The wafer that becomes a substrate in semiconductor manufacturing includes ingot growing (ingot growing), slicing process for cutting the ingot into wafer form, lapping process for flattening and flattening the wafer thickness, A polishing process for mirror-polishing the surface of the wafer, and a cleaning process for cleaning the wafer and removing foreign substances adhering to the surface.

During the above process, defects may occur on the surface and sub-surface of the wafer. The types of defects include particle particles, scratches, crystal defects, and subsurface roughness.

In recent years, the above-mentioned restrictions on defects of wafers have been rapidly strengthened, and in particular, with the progress of large-scale wafer hardening, it has been required to realize a high-quality defect free wafer in view of the processing characteristics of large diameter wafers.

In accordance with this trend, an edge polishing process is performed during a polishing process to remove defects, particularly edge defects of wafers, which are mechanically polished by polishing the edges of the wafers with a polishing pad, Means a process of chemically polishing while assisting in polishing.

However, in the conventional edge polishing process, the angle of the plate or / and the polishing pad, which is in contact with the edge of the wafer, is fixed, resulting in a problem that the machining accuracy is significantly lowered.

Particularly, when the drum of the edge polishing apparatus rotates at a high speed and the wafer moves up and down, the accuracy of processing is lowered by the angle of the existing fixed plate and / or the polishing pad.

Examples in which the machining accuracy is lowered include over polishing which is performed to the surface of the wafer, or a case where the bevel end portion is unprocessed.

1. Korean Published Patent: No. 2013-0079746 (2013.07.11: Disclosure Date)

It is an object of the present invention to provide an edge polishing apparatus and edge polishing method for realizing wafer edge machining with high accuracy by variably realizing a machining angle.

According to one embodiment, there is provided an edge polishing apparatus for machining each wafer edge, comprising: a chuck pad portion for rotating a vacuum adsorbed wafer; A drum body portion disposed on the outer side of the chuck pad portion and rotating; And a machining angle of the polishing portion disposed in the drum body portion, the machining angle being determined by a basic angle of the polishing portion and a shape angle of the wafer or a variable angle reflecting a vertical motion angle of the wafer, An edge polishing apparatus including an abrasive plate portion for machining an edge.

Wherein the polishing plate portion comprises: a polishing portion that operates according to the variable machining angle; And a polishing pad mounted on one surface of the polishing unit facing each of the wafer edges.

The abrasive plate portion has a weight; And a shaft portion disposed between the weight portion and the polishing portion via a rotating shaft, and the weight can transmit a tilting force generated according to the rotating centrifugal force of the drum body portion to the polishing portion.

The polishing unit can press the wafer by the tilting force.

The polishing plate portion may further include a motor for generating a rotational force, and the polishing portion and the polishing pad may change the processing angle by a rotational force of the motor.

The machining angle may include the variable angle determined according to a combination of the shape angle of the wafer and the up-and-down motion angle of the wafer.

The machining angle may be a contact angle between each of the wafer edges and the polishing pad, or may be an angle of contact of the polishing section in contact with each of the wafer edges.

Wherein the polishing unit includes a first polishing unit disposed opposite to a front bevel of a wafer edge, and the first polishing unit includes a first polishing unit configured to detect an inclination of the upper edge of the wafer, Lt; / RTI >

Wherein the abrasive portion includes a second abrasive portion disposed to face the vicinity of the apex of the wafer edge and the second abrasive portion is disposed on the upper portion of the weight, Lt; / RTI >

Wherein the polishing unit includes a third polishing unit disposed opposite to a rear bevel of the wafer edge, and the third polishing unit includes, when disposed at the lower portion of the weight, Or may be a lower plate that reacts by the tilting force of the weight placed on the upper portion when placed on the weight addition top.

The polishing unit may have a different shape depending on the machining angle or the shape of each wafer edge.

According to one embodiment, there is provided a method of edge polishing of a controller for controlling an edge polishing apparatus that variably processes each edge of a wafer with different machining angles, the method comprising: edge shape information of the wafer; Uploading information; Determining a variable angle based on the uploaded edge shape information, up / down motion information, or combination information thereof; And applying the machining angle including the determined variable angle and the basic angle of the polishing unit to an abrasive plate portion provided in the edge polishing apparatus so that each of the wafer edges is processed (polished).

The machining angle may be a contact angle between each of the wafer edges and the polishing pad, or may be an angle of contact of the polishing section in contact with each of the wafer edges.

The processing angle may be an angle relative to at least one of the apex, front bevel and back bevel of the wafer edge.

The machining angle may be determined by the rotational force of a motor provided in the edge polishing apparatus or a motor provided in the polishing plate unit.

As described above, according to the present embodiments, the processing accuracy of the wafer edge can be improved as follows by applying the processing angle differently according to the edge shape, the edge angle, or a combination thereof.

First, these embodiments have the effect of reducing the overpolishing to the wafer surface beyond the front bevel, rear bevel and apex area by applying a different machining angle to the existing fixed machining angle or a constant machining angle.

Second, these embodiments have the effect of controlling a wafer edge shape that is more effective than the conventional one, by applying a variable machining angle to different wafer product groups for each customer.

Third, the present embodiments reduce the cost of manufacturing a new plate by applying different processing angles to different wafer product groups for each customer, thereby reducing manufacturing costs.

It is to be understood that other advantages, which are not mentioned above, may be apparent to those skilled in the art from the following description.

1 is a block cross-sectional view illustrating an example of an edge polishing apparatus according to one embodiment.
Fig. 2 is a schematic view showing the relationship between the drum portion and each wafer edge of the edge polishing apparatus of Fig. 1. Fig.
3 is a perspective view showing an example of the position of each polishing portion disposed in the drum portion of the edge polishing apparatus according to one embodiment.
FIG. 4 is a top view of the respective polishing units arranged in the drum body of FIG. 3 viewed from above.
5 is a cross-sectional view exemplarily showing the structure of an abrasive plate portion according to an embodiment.
6 and 7 are views showing a structural form of the polishing part according to an embodiment.
8 is a view showing an example of a machining operation for machining the front bevel of the first polishing unit shown in Figs. 6 and 7. Fig.
9 is a configuration diagram showing an example of a shape change of the polishing unit according to an embodiment.
10 is a flowchart exemplarily showing an example of an edge polishing method performed by a controller according to an embodiment.

The method and apparatuses disclosed in the following embodiments will be described in more detail with reference to the drawings. The terms used in the following examples are used only to illustrate a specific example and are not limited thereto.

It is also to be understood that the terms such as 'include', 'comprising', 'placing', or 'done', as disclosed in the following embodiments, It is to be understood that the present invention includes not only other elements but also other elements.

It is also to be understood that the singular < RTI ID = 0.0 > term " above " used in the description of the embodiments disclosed in the examples below and in the claims is intended to include plural representations, unless the context clearly dictates otherwise, And ' are to be understood to include any and all possible combinations of one or more of the listed items of relevance.

In the following description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under / under" quot; on "and" under "are to be understood as being" directly "or" indirectly & . In addition, the criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

Based on this, the edge polishing apparatus and the edge polishing method will be described in the following embodiments.

≪ Embodiment of edge polishing apparatus >

FIG. 1 is a block sectional view showing an example of an edge polishing apparatus according to an embodiment, and FIG. 2 is a schematic view showing a relationship between a drum portion and each wafer edge of the edge polishing apparatus of FIG. Fig. 2 will be referred to as supplementary when describing Fig.

1, an edge polishing apparatus 100 according to an embodiment includes a chuck pad portion 110 and a drum portion 100A. The drum portion 100A includes a drum body portion 120 and a polishing plate 100A. (130).

In one embodiment, the chuck pad portion 110 includes a vacuum plate for holding and fixing the wafer W by vacuum suction, and a chuck shaft provided below the vacuum plate for supporting and rotating the vacuum plate.

In one embodiment, the drum body portion 120 is disposed on the outside of the chuck pad portion 110. The drum body portion 120 has a structure in which a polishing plate portion 130 for processing (polishing) Or may be rotated at a high speed separately from the abrasive plate portion 130.

The aforementioned wafer W edge has an Apex 101 as an outermost edge of the wafer W as shown in Fig. 2, and an Apex 101 as a bevel indicating the inclination from the surface of the wafer W to the Apex The bevel may be composed of a front bevel 102 forming an upper surface inclination of the edge and a rear bevel 103 forming a bottom inclination of the edge.

In this case, a plurality of abrasive plate parts 130 are provided on at least one side of the upper side and the lower side of the one side of the drum body part 120, and the abrasive plate parts 130 are disposed on one side of the polishing part 131 and the polishing part 131 And may be disposed on at least one of the upper side or the lower side of the drum body portion 120 in accordance with the position of the apex 101 of the wafer edge and the position of each bevel 102, This arrangement will be discussed later in more detail.

Furthermore, the abrasive plate portion 130 is disposed on the drum body portion 120 and includes a plurality of abrasive plate portions 130, each of which is associated with at least one of the apex 101, the front bevel 102 and the back bevel 103, (Shape angle or design) of the wafer (W) edge of each wafer product group of the customer, or up and down movement of the wafer generated during polishing (including an angle of motion, a vertical motion angle of each wafer edge) According to these combinations, the machining angle can be varied (varied) in consideration of the basic angle of the polishing part 131 and the variable angle of the polishing part of each wafer product group of the customer, and the machining of the wafer edge corresponding to the variable machining angle (Polishing) can be performed.

For example, the above-mentioned processing angle may be an angle value including a basic angle of the polishing part 131 and a variable angle reflecting the shape angle of the wafer by the wafer product group as shown in [Table 1] below.

Alternatively, the above-mentioned processing angle may be an angle value determined by including a basic angle of the polishing part 131 and a variable angle reflecting the up-down motion (motion angle) of the wafer during polishing, as shown in [Table 1] below.

Alternatively, the above-mentioned processing angle may be an angle value determined by including the basic angle of the polishing unit 131 and the shape angle of the wafer for each wafer product group, and the variable angle reflecting the vertical motion angle of the wafer during polishing, It is possible.

Basic angle 25 31.5 34.5 36 41 45 50 55 Variable angle 11.9 ~
34.7 16.9 ~
40.9 23.9 ~
42.5 25.7 ~
44.3 31.8 ~
47.9 33 ~
51.9 42.5 ~
55.6 48.4 ~
59.9

Here, the basic angle may be an inclined angle of inclination of the abrasive plate portion 130 contacting the wafer edge from the wafer plane when viewing the wafer plane of the customer's product group at zero, and the variable angle may be "+" And "-" ranges. The angles can be checked in Table 1 above.

The upward and downward movements (angles) of the wafers mentioned above occur when the abrading plate portion 130 is pushed up and down during the high-speed rotation of the drum body portion 120, alternatively, the variable angles are changed according to the up- Or may be an angle value determined further reflecting the location element of the wafer.

In addition, the basic angle of the polishing plate portion 130 and the processing angle including the variable angle may be a contact angle between the wafer edge and the polishing portion 131 of the abrasive plate portion 130 in accordance with the customer-specific wafer product group, (Inclined plane) angle of the polishing portion 131 of the polishing plate portion 130 in contact with each wafer W edge.

The machining angle used to machine the wafer edge in the abrasive plate portion 130 may be received from the controller (not shown) through the internal network or external network.

For example, the abrasive plate portion 130 receives the above-described variable machining angle from either the host computer including the controller and the machine controller and the microcomputer (processor), and adjusts the angle of each wafer edge Example: Apex 101, front bevel 102, rear bevel 103) can be machined (polished) simultaneously.

As described above, in the present embodiment, unlike the case of using a fixed machining angle for each wafer product group, the variable angle of machining is changed for each wafer product group in consideration of the variable angle of the wafer and the basic angle of the polishing plate 130 It is possible to prevent the wafer edge from being processed outside the wafer edge portion, for example, to prevent over-polishing or to process the wafer surface, thereby improving the accuracy of wafer edge machining.

The abrasive plate portion 130 includes at least one abrasive portion (not shown) for machining the apex portion 101, the front bevel portion 102, and the rear bevel portion 103 of each wafer edge in accordance with a variable machining angle 131 and a polishing pad 132.

In one embodiment, the polishing section 131 has a structure that substantially operates in accordance with a variable machining angle, and includes a first polishing section 131a disposed in the vicinity of the front bevel 102 of the wafer edge as shown in FIG. 2, A second polishing portion 131b disposed opposite to the vicinity of the apex 101 of the wafer edge and a third polishing portion 131c disposed opposite to the vicinity of the rear bevel 103 of the wafer edge have.

In one embodiment, the polishing pad 132 is mounted on one side of the first, second and third polishing portions 131a, 131b and 131c opposite to the respective wafer edges, and the APEX 101 on the edge of the wafer W, The front bevel 102, and the rear bevel 103. In this case, as shown in FIG.

This polishing pad 132 may be a structure that is substantially and directly performed to process (polish) each wafer edge in accordance with a variable machining angle.

One side of the polishing pad 132 may be designed to meet a variable machining angle. For example, the inclined surface may be designed to be inclined in accordance with the determined machining angle, or may be designed in a straight line.

Hereinafter, the polishing plate portion 130 for changing the machining angle will be described in more detail.

<Example of Polishing Portion>

FIG. 3 is a perspective view showing an example of the position of each polishing unit disposed in the drum unit of the edge polishing apparatus according to one embodiment, and FIG. 4 is a sectional view schematically showing positions of the polishing units disposed in the drum body unit of FIG.

3, the polishing unit 131 includes a first polishing unit 131a, a second polishing unit 131b, and a plurality of second polishing units 131a and 132b disposed on the upper side and / or the lower side of the side surface of the drum body 120, And a third polishing unit 131c.

For example, the first polishing portion 131a may be disposed at a predetermined distance from the lower side surface of the drum body portion 120 so as to face the front bevel 102 of the wafer edge.

For example, the second polishing portion 131b may be disposed at a predetermined distance from the upper side or the lower side of the drum body portion 120 so as to face the vicinity of the apex 101 of the wafer edge.

For example, the third polishing portion 131c may be disposed in a plurality of positions at a predetermined interval on the upper side face facing the rear bevel 103 of the wafer edge.

The first polishing unit 131a, the second polishing unit 131b and the third polishing unit 131c mentioned above can be arranged as shown in FIG. 4 if they are arranged in order according to the position of each wafer edge, have.

Here, for the disposition of the first to third polishing units 131a to 131c, the polishing plate unit 130 is a weight weight that can be combined at different positions along the polishing units 131 and the polishing pad 132, A shaft portion, and the like.

These will be described with reference to FIGS. 5 to 9 as follows.

&Lt; Embodiment of polishing plate part &

5 is a cross-sectional view exemplarily showing the structure of an abrasive plate portion according to an embodiment.

5, the polishing plate portion 130 according to an embodiment further includes a weight 133, a shaft portion 134, and a motor 135 as well as a polishing portion 131 and a polishing pad 132 can do.

In one embodiment, the weight 133 may transmit a tilting force generated according to the rotational centrifugal force of the drum body 120 to the polishing unit 131, and may be utilized in the processing of each wafer edge.

For example, when the weight 133 protrudes outward according to the rotation centrifugal force of the drum body 120, the polishing unit 131 moves inward by the tilt force transmitted from the weight 133, ) And the polishing part 131 (the degree of pressing of the contact may be changed).

When the wafer W and the polishing portion 131 / the polishing pad 132 are brought into contact with each other, the polishing portion 131 can process a desired wafer edge portion according to a variable processing angle.

The shaft portion 134 is disposed between the weight 133 and the polishing portion 131 via the rotation shaft 134a so that the rotation shaft 134a is rotated by the tilting force of the weight 133 Can be moved left and / or right together.

The motor 135 may be separately disposed from the inside of the polishing unit 131 or the polishing unit 131 to generate a rotational force and may transmit the rotational force to the polishing unit 131. [

The generated rotational force can be related to the variation of the machining angle. That is, the polishing unit 131 and the polishing pad 132 may process each wafer edge at a different processing angle by the rotational force of the motor 135. However, the present invention is not limited to this, and a rotational force may be generated through the chain.

The rotational force of the motor 135 can be controlled by a command of the controller or the like described with reference to FIG. 1, and the motor 135 can be a variable motor that varies the rotational force.

Here, the position of the weight 133 may vary depending on the shape of the polishing part 131, for example, the first polishing part 131a, the second polishing part 131b and the third polishing part 131c. The following is a summary of this.

&Lt; Example of Each Polishing Portion >

Figs. 6 and 7 are views showing a structural form of the polishing part according to an embodiment, and Fig. 8 shows an example of a machining operation for machining the front bevel of the first polishing part shown in Figs. 6 and 7. Fig.

6A is a second polishing part 131b for machining the apex 101. The second polishing part 131b is provided with a weight 133 placed at the bottom It may be an upper plate responsive to the tilting force of the weight 133 disposed below.

The polishing unit 131 shown in FIG. 6B is a first polishing unit 131a for processing the front bevel 102. The first polishing unit 131a has a weight 133 When placed, may be an upper plate that is responsive to the tilting force of the weight 133 disposed below.

7A is a second polishing part 131b for machining the apex 101. The second polishing part 131b is provided with a weight 133 placed on the upper part It may be a lower plate that reacts by the tilting force of the weight 133 disposed at the upper part.

Thus, the second polishing portion 131b of FIGS. 6 (a) and 7 (a) may be an upper plate and / or a lower plate.

7 (b), the third polishing part 131c for machining the rear bevel 103 has a structure in which when the weight 133 is disposed on the upper part, Or by a tilting force of the lower plate 133.

As described above, in this embodiment, a more accurate machining angle can be applied through the above-described inter-structure coupling and positional relationship, or a more accurate machining angle can be applied.

For example, when the lower weight 133 shown in FIG. 8 (a) moves out due to the centrifugal force due to the high-speed rotation of the drum body 120, the first polishing part 131a is moved inward The first polishing portion 131a and the wafer-to-wafer contact can be made.

Thereafter, when the wafer affected by the high-speed rotation of the drum body portion 120 shown in Fig. 8 (b) rises, the first polishing portion 131a moves in the range of the processing angle When the upper edge is machined (polished), it can return to the original position.

Thereafter, when the lower weight 133 shown in FIG. 8C moves inward, the first polishing portion 131a moves outward, and the remaining upper surface edge of the contacted wafer is processed (polished) .

&Lt; Embodiment of changing the shape of the polishing part >

9 is a configuration diagram showing an example of a shape change of the polishing unit according to an embodiment.

Referring to FIG. 9, the polishing part 131 according to one embodiment may be applied to different shapes according to the processing angles described in FIGS. 1 to 8 or the shapes of the respective wafer edges 101, 102, and 103. The shape of the polishing portion 131, which is otherwise applied, may be any of triangular, trapezoidal, and rectangular (square or rectangular).

For example, in the case of the first machining angle, a roughly triangular-shaped polishing portion 131 can be applied like the left-side polishing portion 131 in Fig. 8, and in the case of the second machining angle, 131) having a rectangular shape can be applied. As described above, the shape and the processing angle of the polishing section 131 may have a close relationship, but are not limited thereto.

The first machining angle and the second machining angle mentioned are merely examples of variable machining angles.

When the left-side polishing portion 131 is the first polishing portion 131a and / or the third polishing portion 131c as in the case of the left-side polishing portion 131 in Fig. 8, the upper edge bevel and / And the right side polishing part 131 may have a quadrangular shape corresponding to the wafer edge shape of the apex 101 in the case of the second polishing part 131b.

&Lt; Embodiment of Edge Polishing Method >

10 is a flowchart exemplarily showing an example of an edge polishing method performed by a controller according to an embodiment.

Referring to FIG. 10, an edge polishing method 200 according to an exemplary embodiment may be applied to an edge polishing apparatus that variably changes the processing edge (polishing) &Lt; / RTI &gt;

The internal network or the external network is preferably a wired network in the aspect, but may be a wireless network.

Since the shape of the edge polishing apparatus and the controller for substantially processing the wafer edge are fully described in Figs. 1 to 8, a description thereof will be omitted. However, it goes without saying that the present embodiment is applied to all or part of the present invention.

The edge polishing method 200 performed by the controller includes steps 210-230.

In step 210 of one embodiment, the controller receives and uploads edge shape information of the wafer, edge up / down motion information, or combination information thereof from the edge polishing apparatus via the internal network or external network, or by input by its own input means , And uploaded from the database / memory.

The information uploaded by the input means or from the database / memory can be derived according to a pre-determined wafer product family.

In step 220 of the embodiment, the controller can determine the variable angle of the polishing unit 131 based on the uploaded edge shape information, wafer up / down motion information, or combination information thereof.

The above-mentioned up-and-down movement information of the wafer may include edge up-down movement information of the wafer.

In addition, in step 220, the controller can upload the basic angle of the polishing unit 131 for each wafer product group together with the variable angle determination. The uploading of the basic angles of the polishing unit 131 can be uploaded from the edge polishing apparatus, the input means or the database / memory according to the wafer family as well as the information described above.

In step 230 of the embodiment, the controller can generate the machining angle by adding the basic angle of the polishing part 131 to the variable angle determined by step 210 described above.

For example, the generated machining angle may be an angle value including a basic angle of the polishing part 131 and a variable angle reflecting the shape angle of the wafer by the wafer product group, as shown in [Table 2] below.

Alternatively, the generated machining angle may be an angular value including a basic angle of the polishing unit 131 and a variable angle reflecting a vertical motion (motion angle) of the wafer during polishing, as shown in [Table 2] below.

Alternatively, the generated machining angle may be an angular value determined by inclusive of a basic angle of the polishing unit 131 and a shape angle of the wafer for each wafer product group, and a variable angle obtained by combining the up and down movement angles of the wafer during polishing, It is possible.

Basic angle 25 31.5 34.5 36 41 45 50 55 Variable angle 11.9 ~
34.7 16.9 ~
40.9 23.9 ~
42.5 25.7 ~
44.3 31.8 ~
47.9 33 ~
51.9 42.5 ~
55.6 48.4 ~
59.9

Here, the basic angle means each fixed angle of the inclined wafer product group of the polishing plate portion 130 which contacts the wafer edge from the wafer plane when the wafer plane is viewed at 0 degree, which can be confirmed from the above-mentioned Table 2. [Table 2]

On the other hand, the upward and downward movement angles of the wafers at the variable angles can be generated when the abrading plate portion 130 is pushed up and down at the time of the high-speed rotation of the drum body portion 120. Further, And may include the location elements of the wafer that have changed accordingly.

In addition, the basic angle of the abrasive plate portion 130 and the processing angle including the variable angle are angles relative to at least one of the apex 101, front bevel 102 and back bevel 103 of the wafer edge, A contact angle between the polishing pads, or it may be the contact surface angle of the polishing portion 131 in contact with each wafer edge.

In step 230 of the embodiment, the controller applies the generated machining angles to the polishing unit 131 or the motor 135 of the polishing plate unit 130 via the internal network or external network to determine the position of each wafer edge (e.g., Bevel and back bevel) may be machined (polished).

Here, the machining angle may be controlled by a motor provided in the edge polishing apparatus or a motor provided in the polishing plate unit, or by chain movement. Therefore, the controller controls the rotation angle or chain movement of the motor to adjust the machining angle .

As described above, in the present embodiment, different angles of the wafer and angles of up and down movements of the wafer, and the basic angle of the polishing plate portion 130 are taken into consideration Thus, by applying a corresponding variable machining angle to each wafer product group, it is possible to prevent machining out of a region of the wafer edge, for example, to prevent over-polishing or to process the wafer surface, thereby improving the accuracy of wafer edge machining .

It will be apparent to those skilled in the art that the embodiments disclosed above may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.

Accordingly, the above description should not be construed as limiting in all respects and should be considered illustrative. The scope of the present embodiment should be determined by rational interpretation of the appended claims, and all changes within the equivalent scope of the present embodiment are included in the scope of the present embodiment.

100: Edge polishing apparatus 101: Apex
102: front bevel 103: rear bevel
110: Chuck pad part 120: Drum body part
130: abrasive plate part 131: abrasive part
132: polishing pad 133: weight
134: shaft portion 135: motor
131a: first polishing portion 131b: second polishing portion
131c: third polishing section

Claims (10)

An edge polishing apparatus for processing each wafer edge,
A chuck pad portion for rotating the vacuum adsorbed wafer;
A drum body portion disposed on the outer side of the chuck pad portion and rotating; And
Wherein the polishing angle of the polishing unit is determined by a basic angle of the polishing unit and a shape angle of the wafer or a variable angle reflecting a vertical motion angle of the wafer, The polishing plate portion
And an edge polishing apparatus. The method according to claim 1,
The abrasive plate portion
A polishing part operating according to the variable machining angle; And
A polishing pad mounted on one surface of the polishing unit facing each wafer edge,
And an edge polishing apparatus. 3. The method of claim 2,
The abrasive plate portion
Weight; And
Further comprising a shaft portion disposed between the weight portion and the polishing portion via a rotating shaft,
The weighing device,
And transmits the tilting force generated according to the rotating centrifugal force of the drum body portion to the polishing portion. The method of claim 3,
And the polishing section presses the wafer by the tilting force. 3. The method of claim 2,
The abrasive plate portion
Further comprising a motor for generating a rotational force,
Wherein the polishing section and the polishing pad change the processing angle by a rotational force of the motor. 6. The method according to any one of claims 1 to 5,
Preferably,
And the variable angle determined by a combination of a shape angle of the wafer and a vertical movement angle of the wafer. 6. The method according to any one of claims 1 to 5,
Preferably,
The contact angle between each of the wafer edges and the polishing pad, or the contact surface angle of the polishing section contacting each of the wafer edges. The method according to claim 2 or 3,
The polishing unit includes:
And a first polishing portion disposed opposite to a front bevel of the wafer edge,
Wherein the first polishing unit comprises:
Is an upper plate that is responsive to a tilting force of a weight disposed at the lower portion when disposed at the lower portion of the weight addition. The method according to claim 2 or 3,
The polishing unit includes:
And a third polishing section disposed opposite to the vicinity of the apex of the wafer edge,
Wherein the third polishing unit comprises:
Wherein the upper plate is a lower plate that reacts by a tilting force of a weight placed on the upper portion when disposed on the weight addition top. The method according to claim 2 or 3,
The polishing unit includes:
And a second polishing portion disposed opposite to a vicinity of a rear bevel of the wafer edge,
Wherein the second polishing unit comprises:
A lower plate which is disposed on the lower portion of the weight and is responsive to a tilting force of the weight placed on the lower portion of the upper portion, Edge polishing apparatus.

Images