CN109273539A - 12 main grid cell pieces of one kind and its manufacturing process - Google Patents
12 main grid cell pieces of one kind and its manufacturing process Download PDFInfo
- Publication number
- CN109273539A CN109273539A CN201811262319.6A CN201811262319A CN109273539A CN 109273539 A CN109273539 A CN 109273539A CN 201811262319 A CN201811262319 A CN 201811262319A CN 109273539 A CN109273539 A CN 109273539A
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- phosphorus source
- main gate
- cell piece
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000007639 printing Methods 0.000 claims abstract description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 48
- 238000009792 diffusion process Methods 0.000 claims description 31
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 27
- 229910052698 phosphorus Inorganic materials 0.000 claims description 27
- 239000011574 phosphorus Substances 0.000 claims description 27
- 229910052757 nitrogen Inorganic materials 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 4
- 238000012360 testing method Methods 0.000 claims description 4
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 239000012495 reaction gas Substances 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 238000005728 strengthening Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of 12 main grid cell pieces, are related to manufacture of solar cells manufacturing technology field.The present invention includes front electrode and rear electrode, and front electrode is equipped with 12 main gate lines being parallel to each other and several thin grid lines；The both ends of main gate line are respectively provided with into bifurcation structure；Two main gate lines of connected battery on piece connect in such a way that dotted line is connected；Point width in the connected mode of dotted line is 0.6mm, and the line width in the connected mode of dotted line is 0.1mm；Segment grid line is also connected in main gate line between adjacent two thin grid line.Invention passes through with 12 main grid cell pieces made by the segment grid line in 12 main gate lines, several thin grid lines, and setting main gate line, the collecting effect of effective strengthening electric current；Simultaneously by increasing segment grid line, avoid since thin grid line is meticulous, network blocking is easy when printing leads to disconnected grid.
Description
Technical field
The invention belongs to manufacture of solar cells manufacturing technology field, more particularly to a kind of 12 main grid cell pieces and
A kind of 12 main grid cell piece manufacturing process.
Background technique
With the high speed development of photovoltaic industry, efficient differentiated products become the trump of major competition among enterprises.Using efficient
Rate, high performance-price ratio photovoltaic module have been increasingly becoming direction and the common recognition of photovoltaic industry development come degree of reduction electricity cost.Sunlight from
Cell piece front enters battery, and positive metal electrode can block a part of light, this part is according to luminous energy on the electrode also with regard to nothing
Method is transformed into electric energy, from this view, it is intended that grid line is done more thinner better.And the purpose for printing grid line is to conduct electricity
Stream, from the angle analysis of resistivity, grid line gets over that detailed rules and regulations conduction cross-sectional area is smaller, and ohmic loss is bigger, but grid line is meticulous is easy
Network blocking leads to disconnected grid when being boiled into printing, and disconnected grid situation is even more obvious when EL is tested, and EL degradation ratio is caused to increase.
Summary of the invention
The purpose of the present invention is to provide a kind of 12 main grid cell pieces, by with 12 main gate lines, several thin grid
12 main grid cell pieces made by segment grid line on line, and setting main gate line, the collecting effect of effective strengthening electric current；Together
When by increasing segment grid line, avoid since thin grid line is meticulous, network blocking is easy when printing leads to disconnected grid.
In order to solve the above technical problems, the present invention is achieved by the following technical solutions:
The present invention is a kind of 12 main grid cell pieces, including front electrode and rear electrode, the front electrode are equipped with
12 main gate lines being parallel to each other and several thin grid lines；The both ends of the main gate line are respectively provided with into bifurcation structure；
Two main gate line of connected battery on piece connects in such a way that dotted line is connected；In the connected mode of the dotted line
Point width be 0.6mm, the line width in the connected mode of the dotted line is 0.1mm；
Segment grid line is also connected in main gate line between the adjacent two thin grid line.
Further, the width of the main gate line is 0.1mm-0.2mm.
Further, the width of the thin grid line is 20-30um.
Further, the wide 5-10um of width of the thinner grid line of segment grid line width.
A kind of manufacturing process of 12 main grid cell piece, successively include making herbs into wool, low pressure diffusion, etching, anti-PID, PECVD,
Back electrode printing, positive electrode printing, sintering, testing, sorting, is assembled into component at the printing of back electric field；It is characterized in that,
The low pressure diffusion is spread using two steps, including the diffusion of first time phosphorus source and second of phosphorus source diffusion；
The first time phosphorus source diffusion: the temperature in inside and outside furnace chamber is made to stablize the inside furnace chamber within the scope of 835 ± 0.5 DEG C
It is inside passed through big nitrogen, small nitrogen and oxygen, the diffusion of first time phosphorus source is carried out to crystal silicon chip, small nitrogen flow is 1150 ± 50sccm, small
Nitrogen flow is 115 ± 5sccm, and oxygen flow is 180 ± 20sccm, and phosphorus source diffusion time first time is 15 ± 1min, inside and outside furnace
Intracavitary pressure maintains within the scope of 150 ± 5mbar；
Second of phosphorus source diffusion: the temperature in inside and outside furnace chamber is made to stablize the inside furnace chamber within the scope of 835 ± 0.5 DEG C
It is inside passed through big nitrogen, oxygen and the small nitrogen for carrying phosphorus source, second of phosphorus source diffusion is carried out to crystal silicon chip, small nitrogen flow is 1150
± 50sccm, small nitrogen flow are 180 ± 20sccm, and oxygen flow is 110 ± 10sccm, second phosphorus source diffusion time be 15 ±
1min, the pressure in inside and outside furnace chamber maintain within the scope of 150 ± 5mbar.
Further, the anti-PID includes that the cell piece after the etching is placed in ozone atmosphere to carry out preliminary oxidation,
The first silica membrane is formed on the cell piece surface；The cell piece after preliminary oxidation chemical vapor deposition is placed in again to set
In standby cavity, under vacuum condition, to contain the gas of nitrogen dioxide as reaction gas in first silica membrane
The second silica membrane of upper deposition；The first mixed gas is passed through into the cavity, wherein contain in first mixed gas
Having volume ratio is the silane and ammonia of 1:3~6, deposits the first silicon nitride film on second silica membrane；And
The second mixed gas is passed through into the cavity, wherein in second mixed gas containing volume ratio be 1:7~9 silane
And ammonia, the second silicon nitride film is deposited on first silicon nitride film, obtains anti-PID cell piece.
The invention has the following advantages:
1, the present invention passes through with the segment grid line institute in 12 main gate lines, several thin grid lines, and setting main gate line
Manufactured 12 main grid cell piece, the collecting effect of effective strengthening electric current；Simultaneously by increasing segment grid line, avoid due to thin grid
Line is meticulous, and network blocking is easy when printing leads to disconnected grid；Ensure that the qualification of EL test, EL qualification rate promote about 1%.
2, the end of main gate line of the invention use bifurcation design, it is ensured that can effective collected current while, increase part
Light-receiving area, while solder joint is played when avoiding main grid wire bonding, it is released effectively thermal stress when conducive to welding, it is hidden to have reduced solder joint
It splits；Main gate line significantly reduces silver paste consumption in such a way that dotted line is connected simultaneously.
3, oxygen concentration, increase second step spread source stream before the present invention increases on the basis of existing two steps oxygen flow diffusion technique
Amount increases surface dopant concentration, and sheet resistance uniformity in lifting tab reduces series resistance, promotes short circuit current and open-circuit voltage, leads to
The sheet resistance distribution crossed more evenly combines the sintering condition of optimization, is promoted to obtain higher transfer efficiency.
Certainly, it implements any of the products of the present invention and does not necessarily require achieving all the advantages described above at the same time.
Specific embodiment
A kind of 12 main grid cell pieces, including front electrode and rear electrode, the front electrode are equipped with 12 phases
Mutually parallel main gate line and several thin grid lines；The both ends of the main gate line are respectively provided with into bifurcation structure；
Two main gate line of connected battery on piece connects in such a way that dotted line is connected；In the connected mode of the dotted line
Point width be 0.6mm, the line width in the connected mode of the dotted line is 0.1mm；
Segment grid line is also connected in main gate line between the adjacent two thin grid line.
Further, the width of the main gate line is 0.1mm-0.2mm.
Further, the width of the thin grid line is 20-30um.
Further, the wide 5-10um of width of the thinner grid line of segment grid line width.
A kind of manufacturing process of 12 main grid cell piece, successively include making herbs into wool, low pressure diffusion, etching, anti-PID, PECVD,
Back electrode printing, positive electrode printing, sintering, testing, sorting, is assembled into component at the printing of back electric field；It is characterized in that,
The low pressure diffusion is spread using two steps, including the diffusion of first time phosphorus source and second of phosphorus source diffusion；
The first time phosphorus source diffusion: the temperature in inside and outside furnace chamber is made to stablize the inside furnace chamber within the scope of 835 ± 0.5 DEG C
It is inside passed through big nitrogen, small nitrogen and oxygen, the diffusion of first time phosphorus source is carried out to crystal silicon chip, small nitrogen flow is 1150 ± 50sccm, small
Nitrogen flow is 115 ± 5sccm, and oxygen flow is 180 ± 20sccm, and phosphorus source diffusion time first time is 15 ± 1min, inside and outside furnace
Intracavitary pressure maintains within the scope of 150 ± 5mbar；
Second of phosphorus source diffusion: the temperature in inside and outside furnace chamber is made to stablize the inside furnace chamber within the scope of 835 ± 0.5 DEG C
It is inside passed through big nitrogen, oxygen and the small nitrogen for carrying phosphorus source, second of phosphorus source diffusion is carried out to crystal silicon chip, small nitrogen flow is 1150
± 50sccm, small nitrogen flow are 180 ± 20sccm, and oxygen flow is 110 ± 10sccm, second phosphorus source diffusion time be 15 ±
1min, the pressure in inside and outside furnace chamber maintain within the scope of 150 ± 5mbar.
Further, the anti-PID includes that the cell piece after the etching is placed in ozone atmosphere to carry out preliminary oxidation,
The first silica membrane is formed on the cell piece surface；The cell piece after preliminary oxidation chemical vapor deposition is placed in again to set
In standby cavity, under vacuum condition, to contain the gas of nitrogen dioxide as reaction gas in first silica membrane
The second silica membrane of upper deposition；The first mixed gas is passed through into the cavity, wherein contain in first mixed gas
Having volume ratio is the silane and ammonia of 1:3~6, deposits the first silicon nitride film on second silica membrane；And
The second mixed gas is passed through into the cavity, wherein in second mixed gas containing volume ratio be 1:7~9 silane
And ammonia, the second silicon nitride film is deposited on first silicon nitride film, obtains anti-PID cell piece.
Conclusion: 12 main grid cell piece prepared by the present invention, battery front side unit consumption decline 30%, light-receiving area increase is about
1%, short circuit current, which is promoted, is greater than 50mA transfer efficiency raising 0.1%, and silver paste consumption reduces by 40% or so in production process, and EL is closed
Lattice rate promotes about 1%.
In the description of this specification, the description of reference term " one embodiment ", " example ", " specific example " etc. means
Particular features, structures, materials, or characteristics described in conjunction with this embodiment or example are contained at least one implementation of the invention
In example or example.In the present specification, schematic expression of the above terms may not refer to the same embodiment or example.
Moreover, particular features, structures, materials, or characteristics described can be in any one or more of the embodiments or examples to close
Suitable mode combines.
Present invention disclosed above preferred embodiment is only intended to help to illustrate the present invention.There is no detailed for preferred embodiment
All details are described, are not limited the invention to the specific embodiments described.Obviously, according to the content of this specification,
It can make many modifications and variations.These embodiments are chosen and specifically described to this specification, is in order to better explain the present invention
Principle and practical application, so that skilled artisan be enable to better understand and utilize the present invention.The present invention is only
It is limited by claims and its full scope and equivalent.
Claims (6)
1. a kind of 12 main grid cell pieces, including front electrode and rear electrode, it is characterised in that: the front electrode is equipped with
12 main gate lines being parallel to each other and several thin grid lines；The both ends of the main gate line are respectively provided with into bifurcation structure；
Two main gate line of connected battery on piece connects in such a way that dotted line is connected；Point in the connected mode of the dotted line
Width is 0.6mm, and the line width in the connected mode of the dotted line is 0.1mm；
Segment grid line is connected in main gate line between the adjacent two thin grid line.
2. a kind of 12 main grid cell piece according to claim 1, which is characterized in that the width of the main gate line is
0.1mm-0.2mm。
3. a kind of 12 main grid cell piece according to claim 1, which is characterized in that the width of the thin grid line is 20-
30um。
4. a kind of 12 main grid cell piece according to claim 1, which is characterized in that the thinner grid of segment grid line width
The wide 5-10um of the width of line.
5. the manufacturing process of the 12 main grid cell piece of one kind as described in claim 1-4 is any one successively includes making herbs into wool, low pressure
Diffusion, etching, the printing of anti-PID, PECVD, back electrode, back electric field printing, positive electrode printing, sintering, testing, sorting, assembling are in groups
Part；It is characterized in that,
The low pressure diffusion is spread using two steps, including the diffusion of first time phosphorus source and second of phosphorus source diffusion；
The first time phosphorus source diffusion: stablize the temperature in inside and outside furnace chamber within the scope of 835 ± 0.5 DEG C, lead in inside furnace chamber
Enter big nitrogen, small nitrogen and oxygen, the diffusion of first time phosphorus source is carried out to crystal silicon chip, small nitrogen flow is 1150 ± 50sccm, small nitrogen stream
Amount is 115 ± 5sccm, and oxygen flow is 180 ± 20sccm, and phosphorus source diffusion time first time is 15 ± 1min, in inside and outside furnace chamber
Pressure maintain within the scope of 150 ± 5mbar；
Second of phosphorus source diffusion: stablize the temperature in inside and outside furnace chamber within the scope of 835 ± 0.5 DEG C, lead in inside furnace chamber
Enter big nitrogen, oxygen and carry phosphorus source small nitrogen, to crystal silicon chip carry out second of phosphorus source diffusion, small nitrogen flow be 1150 ±
50sccm, small nitrogen flow are 180 ± 20sccm, and oxygen flow is 110 ± 10sccm, second phosphorus source diffusion time be 15 ±
1min, the pressure in inside and outside furnace chamber maintain within the scope of 150 ± 5mbar.
6. a kind of manufacturing process of 12 main grid cell piece according to claim 5, which is characterized in that the anti-PID packet
It includes for the cell piece after the etching to be placed in ozone atmosphere and carries out preliminary oxidation, form the first dioxy on the cell piece surface
SiClx film；The cell piece after preliminary oxidation is placed in the cavity of chemical vapor depsotition equipment again, under vacuum condition, to contain
The gas of nitrogen dioxide deposits the second silica membrane on first silica membrane as reaction gas；To described
The first mixed gas is passed through in cavity, wherein in first mixed gas containing volume ratio be 1:3~6 silane and ammonia,
The first silicon nitride film is deposited on second silica membrane；And the second mixed gas is passed through into the cavity,
It wherein, is the silane and ammonia of 1:7~9 containing volume ratio in second mixed gas, on first silicon nitride film
The second silicon nitride film is deposited, anti-PID cell piece is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811262319.6A CN109273539A (en) | 2018-10-27 | 2018-10-27 | 12 main grid cell pieces of one kind and its manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811262319.6A CN109273539A (en) | 2018-10-27 | 2018-10-27 | 12 main grid cell pieces of one kind and its manufacturing process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109273539A true CN109273539A (en) | 2019-01-25 |
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ID=65195285
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| Application Number | Title | Priority Date | Filing Date |
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| CN201811262319.6A Pending CN109273539A (en) | 2018-10-27 | 2018-10-27 | 12 main grid cell pieces of one kind and its manufacturing process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115763583A (en) * | 2022-11-21 | 2023-03-07 | 宣城海螺建筑光伏科技有限公司 | High-efficiency photovoltaic module and manufacturing method thereof |
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| JP2013201217A (en) * | 2012-03-23 | 2013-10-03 | Mitsubishi Electric Corp | Solar cell and manufacturing method thereof |
| US20160056454A1 (en) * | 2008-04-08 | 2016-02-25 | Trojan Battery Company, Llc | Flooded lead-acid battery and method of making the same |
| CN106328723A (en) * | 2016-11-04 | 2017-01-11 | 东莞南玻光伏科技有限公司 | Manufacturing method of anti-PID battery piece and photovoltaic component |
| CN107910384A (en) * | 2017-11-29 | 2018-04-13 | 江苏彩虹永能新能源有限公司 | A kind of more main grid solar cells |
| CN207651505U (en) * | 2017-12-29 | 2018-07-24 | 苏州阿特斯阳光电力科技有限公司 | Cell piece and printing screen plate |
-
2018
- 2018-10-27 CN CN201811262319.6A patent/CN109273539A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160056454A1 (en) * | 2008-04-08 | 2016-02-25 | Trojan Battery Company, Llc | Flooded lead-acid battery and method of making the same |
| CN101552308A (en) * | 2009-05-15 | 2009-10-07 | 江阴浚鑫科技有限公司 | Constant temperature diffusion technology applied on silicon solar cell |
| JP2013201217A (en) * | 2012-03-23 | 2013-10-03 | Mitsubishi Electric Corp | Solar cell and manufacturing method thereof |
| CN106328723A (en) * | 2016-11-04 | 2017-01-11 | 东莞南玻光伏科技有限公司 | Manufacturing method of anti-PID battery piece and photovoltaic component |
| CN107910384A (en) * | 2017-11-29 | 2018-04-13 | 江苏彩虹永能新能源有限公司 | A kind of more main grid solar cells |
| CN207651505U (en) * | 2017-12-29 | 2018-07-24 | 苏州阿特斯阳光电力科技有限公司 | Cell piece and printing screen plate |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115763583A (en) * | 2022-11-21 | 2023-03-07 | 宣城海螺建筑光伏科技有限公司 | High-efficiency photovoltaic module and manufacturing method thereof |
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