CN109273485A - 电致发光显示器 - Google Patents
电致发光显示器 Download PDFInfo
- Publication number
- CN109273485A CN109273485A CN201810698510.9A CN201810698510A CN109273485A CN 109273485 A CN109273485 A CN 109273485A CN 201810698510 A CN201810698510 A CN 201810698510A CN 109273485 A CN109273485 A CN 109273485A
- Authority
- CN
- China
- Prior art keywords
- sub
- pixel
- layer
- repair line
- contact point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008439 repair process Effects 0.000 claims abstract description 116
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000002161 passivation Methods 0.000 claims description 15
- 230000005611 electricity Effects 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 108
- 238000000034 method Methods 0.000 description 41
- 239000013256 coordination polymer Substances 0.000 description 29
- 238000009418 renovation Methods 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 239000010409 thin film Substances 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 229910004205 SiNX Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000003466 welding Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 241001062009 Indigofera Species 0.000 description 3
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2003—Display of colours
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3275—Details of drivers for data electrodes
- G09G3/3291—Details of drivers for data electrodes in which the data driver supplies a variable data voltage for setting the current through, or the voltage across, the light-emitting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0819—Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0264—Details of driving circuits
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/08—Fault-tolerant or redundant circuits, or circuits in which repair of defects is prepared
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/10—Dealing with defective pixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/861—Repairing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本公开提供了一种电致发光显示器,包括:第一基板;布置在第一基板上的子像素;以及位于第一基板上的修复线,对于发射相同颜色的光且彼此相邻的至少每两个子像素有一条修复线,其中,修复线包括具有与第一子像素的电极的接触点的一侧和具有与第二子像素的电极的非接触点的另一侧。
Description
本申请要求于2017年7月17日提交的韩国专利申请第10-2017-0090354号的权益,该申请通过引用并入本文用于所有目的,如同在此完全阐述一样。
技术领域
本公开涉及电致发光显示器。
背景技术
随着信息技术的发展,用作用户与信息之间的媒介的显示器的市场在不断增长。因此,诸如电致发光显示器、液晶显示器和等离子体显示器的不同类型的显示装置被越来越多地使用。
显示装置包括显示面板,显示面板包括多个子像素、驱动显示面板的驱动器以及向显示面板提供电力的电源部。驱动器包括向显示面板提供扫描信号(或栅极信号)的扫描驱动器和向显示面板提供数据信号的数据驱动器。
制造显示面板的过程包括沉积工艺和修复工艺。沉积工艺是其中在基板上沉积导电层、金属层和绝缘层以形成诸如元件(包括电极)、电源线和信号线的结构的过程。修复工艺是其中对形成在基板上的结构上的缺陷进行修复或者将有缺陷的子像素变成暗点的过程。
然而,常规提出的修复方法涉及开口率损失(或透射损失)的风险,并且要求修复工艺中使用的结构被切除或去除。因此,需要改进成品率和产距时间。
发明内容
本公开提供了一种电致发光显示器,包括:第一基板;布置在第一基板上的子像素;以及位于第一基板上的修复线,对于发射相同颜色的光且彼此相邻的至少每两个子像素有一条修复线,其中修复线包括具有与第一子像素的电极的接触点的一侧和具有与第二子像素的电极的非接触点的另一侧。
附图说明
本发明包括附图以提供对本发明的进一步理解并且附图被并入且构成本说明书的一部分,附图示出了本发明的实施方案并且与说明书一起用于解释本发明的原理。在附图中:
图1是有机电致发光显示器的示意性框图;
图2是子像素的示意电路图;
图3是可应用根据本发明第一示例性实施方案的修复方法的子像素的布置的平面图;
图4是根据图3的第一示例性实施方案的子像素的布局的平面图;
图5是可应用根据本发明的第二示例性实施方案的修复方法的子像素的布置的平面图;
图6是根据图5的第二示例性实施方案的子像素的布局的平面图;
图7是可应用根据本发明的第三示例性实施方案的修复方法的子像素的布置的平面图;
图8是根据图7的第三示例性实施方案的子像素的布局的平面图;
图9是可应用根据本发明的第三示例性实施方案的修复方法的子像素的布置的平面图;
图10是沿图9中的线A1-A2截取的截面图;
图11是沿图9中的线B1-B2截取的截面图;
图12是在激光焊接之后沿图9中的线A1-A2截取的截面图;
图13是在激光焊接之后沿图9中的线B1-B2截取的截面图;以及
图14是根据本发明在修复工艺之后已经转变为导电状态的电极的照片。
具体实施方式
现在将详细参考本发明的实施方案,其示例在附图中示出。
在下文中,将参照附图描述本发明的具体实施方案。
下面将要描述的电致发光显示器可以被实现为电视机、视频播放器、个人计算机(PC)、家庭影院、智能电话、虚拟现实设备(VR)等。例如,下面将要描述的电致发光显示器是基于有机发光二极管(发光元件)实现的有机电致发光显示器。然而,应该注意,下面将要描述的电致发光显示器可以基于无机发光二极管来实现。
最后,下面将要描述的有机发光显示器的薄膜晶体管的术语“源电极和漏电极”可以针对不同类型互换使用,但是术语“栅电极”不可互换。因此,源电极和漏电极可以被称为第一电极和第二电极,以不对其进行限制。
图1是有机电致发光显示器的示意性框图。图2是子像素的示意电路图。
如图1所示,有机电致发光显示器包括图像处理器110、定时控制器120、数据驱动器130、扫描驱动器140、显示面板150和电源部160。
图像处理器110输出数据使能信号DE以及外部提供的数据信号DATA。图像处理器110除了输出数据使能信号DE之外还可以输出垂直同步信号、水平同步信号和时钟信号中的一个或更多个。为了便于说明,在附图中可以省略这些信号。
定时控制器120从图像处理器110接收数据信号DATA以及数据使能信号DE或包括垂直同步信号、水平同步信号和时钟信号的驱动信号。定时控制器120基于驱动信号输出用于控制扫描驱动器140的操作定时的栅极定时控制信号GDC和用于控制数据驱动器130的操作定时的数据定时控制信号DDC。
数据驱动器130响应于从定时控制器120提供的数据定时控制信号DDC对从定时控制器120提供的数据信号DATA进行采样和锁存,并将其转换为伽玛参比电压。数据驱动器130通过数据线DL1至DLn输出数据信号DATA。数据驱动器130可以以IC(集成电路)的形式提供。
扫描驱动器140响应于从定时控制器120提供的栅极定时控制信号GDC输出扫描信号。扫描驱动器140通过扫描线GL1至GLm输出扫描信号。扫描驱动器140可以以IC(集成电路)的形式提供或者使用板内栅极技术形成在显示面板150上。
电源部160输出高电平电压和低电平电压。从电源部160输出的高电平电压和低电平电压被提供给显示面板150。高电平电压经由第一电源线EVDD被提供给显示面板150,并且低电平电压经由第二电源线EVSS被提供给显示面板150。
显示面板150响应于分别从数据驱动器130和扫描驱动器140提供的数据信号DATA和扫描信号以及从电源部160提供的电力来显示图像。显示面板150包括第一基板、形成在第一基板上的用于显示图像的子像素SP、以及将子像素SP连同第一基板密封的第二基板。第一基板和第二基板可以由诸如玻璃的刚性材料或诸如树脂的柔性材料制成。
子像素SP可以包括红色子像素、绿色子像素和蓝色子像素,或者可以包括白色子像素、红色子像素、绿色子像素和蓝色子像素。根据发光特性,子像素SP可以具有一个或更多个不同的发光区域。
如图2所示,单个子像素包括开关晶体管SW、驱动晶体管DR、电容器Cst和有机发光二极管OLED。单个子像素还可以包括补偿电路CC。
响应于经由第一扫描线GL1提供的扫描信号,开关晶体管SW进行切换以将经由第一数据线DL1提供的数据电压作为数据电压存储在电容器Cst中。驱动晶体管DR以这样的方式工作:驱动电流响应于存储在电容器Cst中的数据电压在第一电源线EVDD(高电平电压)和第二电源线EVSS(低电平电压)之间流动。有机发光二极管OLED以响应于通过驱动晶体管DR形成的驱动电流而发光的方式工作。
补偿电路CC是添加到子像素中以补偿驱动晶体管DR的阈值电压等的电路。补偿电路CC由一个或更多个晶体管组成。补偿电路CC根据补偿方法可以具有许多配置,因此将省略其描述。
制造上述显示面板的过程包括沉积工艺和修复工艺。沉积工艺是其中在基板上沉积导电层、金属层和绝缘层以形成诸如元件(包括电极)、电源线和信号线的结构的过程。修复工艺是其中修复形成在基板上的结构上的缺陷或者将有缺陷的子像素变成暗点的过程。
常规提出的修复方法涉及开口率损失(或透射损失)的风险,并且要求修复工艺中使用的结构被切除或去除。因此,需要改进生产成品率和产距时间。因此,下面将描述用于改进常规提出的修复方法的示例性实施方案。
<第一示例性实施方案>
图3是可应用根据本发明第一示例性实施方案的修复方法的子像素的布置的平面图。图4是根据图3的第一示例性实施方案的子像素的布局的平面图。
如图3所示,本发明的第一示例性实施方案基于红色子像素R、绿色子像素G、蓝色子像素B和白色子像素W。红色子像素R、绿色子像素G、蓝色子像素B和白色子像素W是以四边形(矩形/方形)排列。也就是说,单个像素由红色子像素R、绿色子像素G、蓝色子像素B和白色子像素W限定。
根据本发明的第一示例性实施方案,红色子像素R和绿色子像素G分别布置在第一扫描线和第三扫描线上,并且蓝色子像素B和白色子像素W分别布置在第二扫描线和第四扫描线上。然而,这仅仅是示例,但是这些子像素的顺序可以根据发光特性、元件的寿命、器件的规格等而不同,并且本发明不限于该示例。
根据本发明的第一示例性实施方案,修复线RRL、GRL、BRL和WRL垂直布置。从平面上看,修复线RRL、GRL、BRL和WRL没有交叠区。也就是说,修复线RRL、GRL、BRL和WRL以不交叠(非交叠)的方式布置。因此,所有修复线RRL、GRL、BRL和WRL由相同层上的电极形成。例如,可以选择电极层作为薄膜晶体管的源电极和漏电极。
对于发射相同颜色的光并且彼此垂直相邻的至少每两个子像素分配有一条修复线RRL、GRL、BRL或WRL。修复线RRL、GRL、BRL和WRL用于通过修复工艺电连接至少两个子像素。
修复线RRL、GRL、BRL和WRL的一侧具有与第一子像素的电极接触的接触点CP,并且另一侧具有与第二子像素的电极不接触的非接触点WP。然而,随着修复工艺的进行,第二子像素的电极与非接触点WP电连接,并且第一子像素的电极与第二子像素的电极经由修复线变得导电。
修复线RRL、GRL、BRL和WRL包括红色修复线RRL、绿色修复线GRL、蓝色修复线BRL和白色修复线WRL。在一个示例中,布置在第一扫描线上的绿色子像素G具有非接触点WP并且连接至绿色修复线GRL的一侧,并且布置在第三扫描线上的绿色子像素G具有接触点CP并连接至绿色修复线GRL的另一侧。
在另一示例中,布置在第二扫描线上的蓝色子像素B具有非接触点WP并且连接至蓝色修复线BRL的一侧,并且布置在第四扫描线上的蓝色子像素B具有接触点CP并连接至蓝色修复线BRL的另一侧。
红色修复线RRL、绿色修复线GRL、蓝色修复线BRL和白色修复线WRL沿着在子像素R、G、B和W的长轴方向上限定的非发光区域垂直布置。红色修复线RRL、绿色修复线GRL、蓝色修复线BRL和白色修复线WRL以不交叠的方式布置,以绕过其他修复线的接触点CP或非接触点WP。
从上述两个示例可以看出,接触点CP和非接触点WP位于修复线RRL、GRL、BRL和WRL的一侧和另一侧。另外,考虑到子像素R、G、B和W以及其他修复线的布置,接触点CP和非接触点WP位置不固定,而是其位置可以改变。
优选地,接触点CP和非接触点WP成对地排列在修复线RRL、GRL、BRL和WRL的任一侧上。这是因为,通过成对地形成接触点CP和非接触点WP,不需要切除或去除修复工艺中使用的结构(修复线),因此,可以改进生产成品率和工艺产距时间。下面将要进一步详细给出关于此的描述。
图4是根据图3的第一示例性实施方案的子像素的布局的平面图,附有图4以示出子像素和修复线的实际配置,但未对其进行指定并且仅用于参考。在图4中,ARL是修复线,WP是非接触点,CP是接触点。
上述第一示例性实施方案具有如下优点:通过预先与一个端子(接触点)而不是另一端子(非接触点或开放位置)接触并将非接触点焊接一次来修复在特定位置处的子像素中出现的缺陷。
<第二示例性实施方案>
图5是可应用根据本发明第二示例性实施方案的修复方法的子像素的布置的平面图。图6是根据图5的第二示例性实施方案的子像素的布局的平面图。
如图5所示,本发明的第二示例性实施方案基于红色子像素R、绿色子像素G、蓝色子像素B和白色子像素W。红色子像素R、绿色子像素G、蓝色子像素B和白色子像素W以四边形布置。也就是说,单个像素由红色子像素R、绿色子像素G、蓝色子像素B和白色子像素W限定。
根据本发明的第二示例性实施方案,红色子像素R和绿色子像素G分别布置在第一扫描线和第三扫描线上,蓝色子像素B和白色子像素W分别布置在第二扫描线和第四扫描线上。然而,这仅仅是示例,但是这些子像素的顺序可以根据发光特性、元件的寿命、器件的规格等而不同,并且本发明不限于该示例。
根据本发明的第二示例性实施方案,修复线RRL、GRL、BRL和WRL垂直布置。从平面上看,修复线RRL、GRL、BRL和WRL具有交叠区OVA。也就是说,修复线RRL、GRL、BRL和WRL以交叠的方式布置——例如,修复线RRL、GRL、BRL和WRL对于至少每两条线被分配一个交叠区OVA(例如,如果修复线垂直布置则对于每两条扫描线分配一个交叠区,或者如果修复线水平布置则对于每两条数据线分配一个交叠区)。因此,修复线RRL、GRL、BRL和WRL中的一些由下层上的下电极形成,而其他的则由上层上的上电极形成。例如,下电极层可以选择为薄膜晶体管的源电极和漏电极,并且上电极层可以选择为有机发光二极管的下电极(例如,阳极)。
对于发射相同颜色的光并且彼此垂直相邻的至少每两个子像素分配有一条修复线RRL、GRL、BRL或WRL。修复线RRL、GRL、BRL和WRL用于通过修复工艺电连接至少两个子像素。
修复线RRL、GRL、BRL和WRL的一侧具有与第一子像素的电极接触的接触点CP,并且另一侧具有与第二子像素的电极不接触的非接触点WP。然而,随着修复工艺的进行,第二子像素的电极与非接触点WP电连接,并且第一子像素的电极和第二子像素的电极经由修复线变得导电。
修复线RRL、GRL、BRL和WRL包括红色修复线RRL、绿色修复线GRL、蓝色修复线BRL和白色修复线WRL。在一个示例中,布置在第一扫描线上的绿色子像素G具有非接触点WP并且连接至绿色修复线GRL的一侧,布置在第三扫描线上的绿色子像素G具有接触点CP并连接至绿色修复线GRL的另一侧。绿色修复线GRL和白色修复线WRL具有部分交叠区OVA。
在另一示例中,布置在第二扫描线上的蓝色子像素B具有非接触点WP并连接至蓝色修复线BRL的一侧,并且布置在第四扫描线上的蓝色子像素B具有接触点CP并连接至蓝色修复线BRL的另一侧。蓝色修复线BRL和红色修复线RRL具有部分交叠区OVA。
从上述两个示例可以看出,接触点CP和非接触点WP位于修复线RRL、GRL、BRL和WRL的一侧和另一侧。另外,考虑到子像素R、G、B和W以及其他修复线的布置,接触点CP和非接触点WP位置不固定,而是其位置可以改变。
优选地,接触点CP和非接触点WP成对地排列在修复线RRL、GRL、BRL和WRL的任一侧。这是因为,通过成对地形成接触点CP和非接触点WP,不需要切除或去除修复工艺中使用的结构(修复线),因此,可以改进生产成品率和工艺产距时间。下面将要进一步详细给出关于此的描述。
图6是根据图5的第二示例性实施方案的子像素的布局的平面图,附上图6以示出子像素和修复线的实际配置,但未对其进行指定并且仅用于参考。在图6中,ARL是修复线,WP是非接触点,CP是接触点,OVA是不同层上的修复线之间的交叠区。
上述第二示例性实施方案具有如下优点:通过预先与一个端子(接触点)而不是另一端子(非接触点或开放位置)接触并将非接触点焊接一次来修复在特定位置处的子像素中出现的缺陷。
此外,由于修复线形成在不同的层上并且交叠,所以第二示例性实施方案可以使由添加修复线引起的开口率的降低最小化。另外,已经以接触点和非接触点分别形成在修复线的任一侧上的示例对第二示例性实施方案进行了描述。然而,这仅仅是一个示例,并且非接触点可以形成在修复线的两侧。在这种情况下,尽管开口率的降低可以被最小化,但是由于存在两个非接触点,必须进行两次激光焊接。
<第三示例性实施方案>
图7是可应用根据本发明第三示例性实施方案的修复方法的子像素的布置的平面图。图8是根据图7的第三示例性实施方案的子像素的布局的平面图。
如图7所示,本发明的第三示例性实施方案基于红色子像素R、绿色子像素G、蓝色子像素B和白色子像素W。红色子像素R、绿色子像素G、蓝色子像素B和白色子像素W以四边形布置。也就是说,单个像素由红色子像素R、绿色子像素G、蓝色子像素B和白色子像素W限定。
根据本发明的第三示例性实施方案,红色子像素R和绿色子像素G分别布置在第一扫描线和第三扫描线上,蓝色子像素B和白色子像素W分别布置在第二扫描线和第四扫描线上。然而,这仅仅是示例,但是这些子像素的顺序可以根据发光特性、元件的寿命、器件的规格等而不同,并且本发明不限于该示例。
根据本发明的第三示例性实施方案,修复线RRL、GRL、BRL和WRL垂直布置。从平面上看,修复线RRL、GRL、BRL和WRL没有交叠区。也就是说,修复线RRL、GRL、BRL和WRL以不交叠(非交叠)的方式布置。因此,所有修复线RRL、GRL、BRL和WRL由相同层上的电极形成。例如,可以选择电极层作为有机发光二极管的下电极(例如,透明电极)。
对于发射相同颜色的光并且彼此垂直相邻的至少每两个子像素分配有一条修复线RRL、GRL、BRL或WRL。修复线RRL、GRL、BRL和WRL用于通过修复工艺电连接至少两个子像素。
修复线RRL、GRL、BRL和WRL的一侧具有与第一子像素的电极接触的接触点CP,并且另一侧具有与第二子像素的电极不接触的非接触点WP。然而,随着修复工艺的进行,第二子像素的电极与非接触点WP电连接,并且第一子像素的电极和第二子像素的电极经由修复线变得导电。
修复线RRL、GRL、BRL和WRL包括红色修复线RRL、绿色修复线GRL、蓝色修复线BRL和白色修复线WRL。在一个示例中,布置在第一扫描线上的绿色子像素G具有非接触点WP并且连接至绿色修复线GRL的一侧,布置在第三扫描线上的绿色子像素G具有接触点CP并连接至绿色修复线GRL的另一侧。
在另一示例中,布置在第二扫描线上的蓝色子像素B具有非接触点WP并且连接至蓝色修复线BRL的一侧,并且布置在第四扫描线上的蓝色子像素B具有接触点CP并连接至蓝色修复线BRL的另一侧。
从上述两个示例可以看出,接触点CP和非接触点WP位于修复线RRL、GRL、BRL和WRL的一侧和另一侧。另外,考虑到子像素R、G、B和W以及其他修复线的布置,接触点CP和非接触点WP位置不固定,而是其位置可以改变。
优选地,接触点CP和非接触点WP成对地排列在修复线RRL、GRL、BRL和WRL的任一侧。这是因为,通过成对地形成接触点CP和非接触点WP,不需要切除或去除修复工艺中使用的结构(修复线),因此,可以改进成品率和工艺产距时间。下面将进一步详细给出关于此的描述。
图8是根据图7的第三示例性实施方案的子像素的布局的平面图,附上图8以示出子像素和修复线的实际配置,但未对其进行指定并且仅用于参考。在图8中,ARL是修复线,WP是非接触点,CP是接触点。
上述第三示例性实施方案具有如下优点:通过预先与一个端子(接触点)而不是另一端子(非接触点或开放位置)接触并将非接触点焊接一次来修复在特定位置处的子像素中出现的缺陷。此外,由于修复线由允许光穿过的透明电极形成,所以第三示例性实施方案可以使由添加修复线引起的开口率的降低最小化。
以下是可应用根据本发明第三示例性实施方案的修复方法的子像素的截面的详细描述。
图9是可应用根据本发明第三示例性实施方案的修复方法的子像素的布置的平面图。图10沿图9中的线A1-A2截取的截面图。图11是沿图9中的线B1-B2截取的截面图。
如图9和图10所示,位于非接触点WP处的下电极层E1和源电极-漏电极层SD通过绝缘材料被电分离。在非接触点WP处示出的结构如下。
光阻挡层LS位于第一基板150a上。光阻挡层LS用于阻挡(防止)光进入薄膜晶体管的沟道区(半导体区)。光阻挡层LS由能够阻挡光透射的金属材料制成。根据薄膜晶体管结构,可以省略光阻挡层LS。
缓冲层BUF位于第一基板150a上。缓冲层BUF用于使光阻挡层LS电绝缘或防止从第一基板150a泄漏的材料的影响。缓冲层BUF被配置成覆盖光阻挡层LS。
第一绝缘层ILD位于缓冲层BUF上。第一绝缘层ILD可以由硅氮化物(SiNx)或硅氧化物(SiOx)的单层或硅氮化物(SiNx)和硅氧化物(SiOx)的多层组成。
源电极-漏电极层SD位于第一绝缘层ILD上。源电极-漏电极层SD可以选自钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)和铜(Cu)或其合金之一,并且可以由单层或多层组成。源电极-漏电极层SD由与薄膜晶体管的源电极和漏电极相同的金属材料制成。源电极-漏电极层SD是包括在第一扫描线上的绿色子像素G中的驱动晶体管的电极(连接至有机发光二极管的电极)的延伸部。
钝化层PAS位于源电极-漏电极层SD上。钝化层PAS可以由硅氮化物(SiNx)或硅氧化物(SiOx)的单层或硅氮化物(SiNx)和硅氧化物(SiOx)的多层组成。
具有对应于非接触点WP的凹陷接触孔的平坦化层OC位于钝化层PAS上。平坦化层OC使包括薄膜晶体管的晶体管阵列的表面平坦化。平坦化层OC可以由诸如外涂层、聚酰亚胺、苯并环丁烯系树脂、丙烯酸酯和光丙烯酸的有机材料制成。
下电极层E1位于平坦化层OC上。下电极层E1位于平坦化层OC中的接触孔内。下电极层E1可以由允许光穿过的透明电极(例如,诸如ITO(铟锡氧化物)和IZO(铟锌氧化物)的氧化物)形成。下电极层E1由与包括在第一扫描线上的绿色子像素G中的有机发光二极管的电极相同的层和相同的材料制成,但是与其分开。
堤层BNK位于下电极层E1上。堤层BNK限定子像素的发光区域(或开口区域)。堤层BNK可以由有机材料或无机材料制成。
如图9和图11所示,位于接触点CP处的下电极层E1和源电极-漏电极层SD电连接。在接触点CP处示出的结构如下。
光阻挡层LS位于第一基板150a上。光阻挡层LS用于阻挡(防止)光进入薄膜晶体管的沟道区(半导体区)。光阻挡层LS由能够阻挡光透射的金属材料制成。根据薄膜晶体管结构,可以省略光阻挡层LS。
缓冲层BUF位于第一基板150a上。缓冲层BUF用于使光阻挡层LS电绝缘或防止从第一基板150a泄漏的材料的影响。缓冲层BUF被配置成覆盖光阻挡层LS。
第一绝缘层ILD位于缓冲层BUF上。第一绝缘层ILD可以由硅氮化物(SiNx)或硅氧化物(SiOx)的单层或硅氮化物(SiNx)和硅氧化物(SiOx)的多层组成。
源电极-漏电极层SD位于第一绝缘层ILD上。源电极-漏电极层SD可以选自钼(Mo)、铝(Al)、铬(Cr)、金(Au)、钛(Ti)、镍(Ni)和铜(Cu)或其合金之一,并且可以由单层或多层组成。源电极-漏电极层SD由与薄膜晶体管的源电极和漏电极相同的金属材料制成。源电极-漏电极层SD是包括在第一扫描线上的绿色子像素G中的驱动晶体管的电极(连接至有机发光二极管的电极)的延伸部。
具有对应于接触点CP的接触孔的钝化层PAS位于源电极-漏电极层SD上。钝化层PAS可以由硅氮化物(SiNx)或硅氧化物(SiOx)的单层或硅氮化物(SiNx)和硅氧化物(SiOx)的多层组成。
具有对应于接触点CP的凹陷接触孔的平坦化层OC位于钝化层PAS上。平坦化层OC使包括薄膜晶体管的晶体管阵列的表面平坦化。平坦化层OC可以由诸如外涂层、聚酰亚胺、苯并环丁烯系树脂、丙烯酸酯和光丙烯酸的有机材料制成。
下电极层E1位于平坦化层OC上。下电极层E1位于平坦化层OC中的接触孔内。下电极层E1可以由允许光穿过的透明电极(例如,诸如ITO(铟锡氧化物)和IZO(铟锌氧化物)的氧化物)形成。下电极层E1经由形成在平坦化层OC和钝化层PAS中的接触孔电连接至源电极-漏电极层SD。
堤层BNK位于下电极层E1上。堤层BNK限定子像素的发光区域(或开口区域)。堤层BNK可以由有机材料或无机材料制成。
以下,将以如下示例来描述由于修复而导致的电极中的结构变化:在第一扫描线和第三扫描线上的绿色子像素之一中出现缺陷并且执行用于修复该缺陷的修复工艺。
图12是激光焊接后沿图9中的线A1-A2截取的截面图。图13是激光焊接后沿图9中的线B1-B2截取的截面图。图14是根据本发明在修复工艺之后已经转变为导电状态的电极的照片。
如图9、图12和图13所示,可以用激光辐照第一扫描线上的绿色子像素G的非发光区域中的非接触点WP。通过激光辐照,源电极-漏电极SD和钝化层PAS熔融。进而,源电极-漏电极SD和下电极层E1电连接。
下电极层E1允许第一扫描线和第三扫描线上的绿色子像素G共享驱动晶体管的电极。因此,甚至两个子像素中之一变得操作上有缺陷(不可操作),也可以通过该两个子像素中的另一个而进行正常驱动。
由于图12本质上不能清楚地描绘出熔融状态下的源电极-漏电极层SD和钝化层PAS,所以将参照图14清楚地示出该熔融状态。
如图14所示,当用激光辐照时,源电极-漏电极层SD和钝化层PAS熔融。随着钝化层PAS熔融,源电极-漏电极层SD与阳极电极层(本发明的下电极层E1)之间的绝缘被破坏。熔融的源电极-漏电极层SD与位于其上方的阳极电极层(本发明的下电极层E1)接触。
从上面可以看出,在本发明中,对于发射相同颜色的光并且彼此相邻的至少每两个子像素分配有一条修复线,这使得能够容易地通过一次修复工艺来修复在两个子像素之一中发生的任何操作缺陷。此外,本发明可以改进成品率和工艺产距时间,因为不需要切除或去除修复工艺中使用的修复线。另外,本发明可以使由增加修复线引起的开口率的降低最小化。
Claims (13)
1.一种电致发光显示器,包括:
第一基板;
子像素,其布置在所述第一基板上;以及
位于所述第一基板上的修复线,对于发射相同颜色的光且彼此相邻的至少每两个子像素有一条修复线,
其中,所述修复线包括具有与第一子像素的电极的接触点的一侧和具有与第二子像素的电极的非接触点的另一侧。
2.根据权利要求1所述的电致发光显示器,其中,所述子像素包括以四边形布置的红色子像素、绿色子像素、蓝色子像素和白色子像素。
3.根据权利要求1所述的电致发光显示器,其中,所述修复线全部形成在相同层上。
4.根据权利要求3所述的电致发光显示器,其中,所述修复线以不交叠的方式布置。
5.根据权利要求1所述的电致发光显示器,其中,所述修复线形成在至少两个不同的层上。
6.根据权利要求5所述的电致发光显示器,其中,所述修复线被布置成具有交叠区。
7.根据权利要求1所述的电致发光显示器,其中,所述修复线由与包括在所述子像素中的晶体管的源电极-漏电极层和包括在所述子像素中的发光二极管的下电极层中的任一者或两者相同的材料制成。
8.根据权利要求1所述的电致发光显示器,其中,所述修复线沿着在所述子像素的长轴的方向上限定的非发光区域垂直布置。
9.根据权利要求1所述的电致发光显示器,其中,所述子像素包括:
缓冲层,其位于所述第一基板上;
第一绝缘层,其位于所述缓冲层上;
源电极-漏电极层,其位于所述第一绝缘层上并延伸至所述接触点或所述非接触点;
钝化层,其位于所述源电极-漏电极层上;以及
平坦化层,其位于所述钝化层上并具有对应于所述接触点或所述非接触点的凹陷接触孔。
10.根据权利要求9所述的电致发光显示器,其中,所述修复线包括下电极层,所述下电极层位于所述平坦化层和所述接触孔上并且沿着在所述子像素的长轴方向上限定的非发光区域垂直布置。
11.根据权利要求9所述的电致发光显示器,其中,所述钝化层包括在对应于所述非接触点的区域中的熔融部和未熔融部。
12.根据权利要求9所述的电致发光显示器,其中,由于当用激光辐照所述非接触点时所述源电极-漏电极层和所述钝化层熔融,所述源电极-漏电极层与所述下电极层电连接。
13.根据权利要求6所述的电致发光显示器,其中,所述修复线为至少每两条线分配有一个交叠区。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170090354A KR102338943B1 (ko) | 2017-07-17 | 2017-07-17 | 전계발광표시장치 |
KR10-2017-0090354 | 2017-07-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109273485A true CN109273485A (zh) | 2019-01-25 |
CN109273485B CN109273485B (zh) | 2023-09-29 |
Family
ID=65000324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810698510.9A Active CN109273485B (zh) | 2017-07-17 | 2018-06-29 | 电致发光显示器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10867542B2 (zh) |
JP (1) | JP6626535B2 (zh) |
KR (1) | KR102338943B1 (zh) |
CN (1) | CN109273485B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112599563A (zh) * | 2019-10-01 | 2021-04-02 | 乐金显示有限公司 | 显示装置 |
TWI761972B (zh) * | 2019-09-30 | 2022-04-21 | 南韓商樂金顯示科技股份有限公司 | 顯示裝置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20200029226A (ko) | 2018-09-10 | 2020-03-18 | 엘지디스플레이 주식회사 | 표시장치 |
US11783739B2 (en) * | 2020-09-10 | 2023-10-10 | Apple Inc. | On-chip testing architecture for display system |
US11645957B1 (en) * | 2020-09-10 | 2023-05-09 | Apple Inc. | Defective display source driver screening and repair |
TW202218144A (zh) * | 2020-10-30 | 2022-05-01 | 群創光電股份有限公司 | 顯示裝置 |
KR20220096854A (ko) * | 2020-12-31 | 2022-07-07 | 엘지디스플레이 주식회사 | 표시 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104103234A (zh) * | 2013-04-01 | 2014-10-15 | 三星显示有限公司 | 有机发光显示装置及其修复和驱动方法 |
KR20140137272A (ko) * | 2013-05-22 | 2014-12-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그의 리페어 방법 |
CN104183621A (zh) * | 2013-05-22 | 2014-12-03 | 三星显示有限公司 | 有机发光显示装置及修复有机发光显示装置的方法 |
CN104700774A (zh) * | 2013-12-09 | 2015-06-10 | 乐金显示有限公司 | 具有修复结构的有机发光显示装置 |
CN105225632A (zh) * | 2014-05-30 | 2016-01-06 | 乐金显示有限公司 | 有机发光显示装置和像素修复方法 |
CN105741734A (zh) * | 2014-12-29 | 2016-07-06 | 乐金显示有限公司 | 有机发光显示装置及其修复方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4342969B2 (ja) * | 2004-01-30 | 2009-10-14 | 三菱電機株式会社 | 表示装置とその製造方法 |
KR101058094B1 (ko) | 2004-12-10 | 2011-08-24 | 삼성전자주식회사 | 어레이 기판, 이를 갖는 표시장치 및 리페어 방법 |
JP2005331977A (ja) | 2005-08-01 | 2005-12-02 | Hitachi Ltd | 液晶表示装置 |
KR101186049B1 (ko) | 2005-12-02 | 2012-09-25 | 엘지디스플레이 주식회사 | 평판표시장치와 그 제조방법, 제조장치, 화질제어방법 및화질제어장치 |
KR102141204B1 (ko) * | 2013-11-20 | 2020-08-05 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 및 유기 발광 표시 장치의 리페어 방법 |
KR102156774B1 (ko) | 2013-12-30 | 2020-09-17 | 엘지디스플레이 주식회사 | 유기발광 표시장치의 리페어 방법 |
-
2017
- 2017-07-17 KR KR1020170090354A patent/KR102338943B1/ko active IP Right Grant
-
2018
- 2018-06-29 CN CN201810698510.9A patent/CN109273485B/zh active Active
- 2018-07-02 JP JP2018125996A patent/JP6626535B2/ja active Active
- 2018-07-04 US US16/027,323 patent/US10867542B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104103234A (zh) * | 2013-04-01 | 2014-10-15 | 三星显示有限公司 | 有机发光显示装置及其修复和驱动方法 |
KR20140137272A (ko) * | 2013-05-22 | 2014-12-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그의 리페어 방법 |
CN104183621A (zh) * | 2013-05-22 | 2014-12-03 | 三星显示有限公司 | 有机发光显示装置及修复有机发光显示装置的方法 |
CN104700774A (zh) * | 2013-12-09 | 2015-06-10 | 乐金显示有限公司 | 具有修复结构的有机发光显示装置 |
CN105225632A (zh) * | 2014-05-30 | 2016-01-06 | 乐金显示有限公司 | 有机发光显示装置和像素修复方法 |
CN105741734A (zh) * | 2014-12-29 | 2016-07-06 | 乐金显示有限公司 | 有机发光显示装置及其修复方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI761972B (zh) * | 2019-09-30 | 2022-04-21 | 南韓商樂金顯示科技股份有限公司 | 顯示裝置 |
US11482590B2 (en) | 2019-09-30 | 2022-10-25 | Lg Display Co., Ltd. | Display device with alternately arranged circuit areas and sub-pixels |
CN112599563A (zh) * | 2019-10-01 | 2021-04-02 | 乐金显示有限公司 | 显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US20190019444A1 (en) | 2019-01-17 |
CN109273485B (zh) | 2023-09-29 |
KR20190008683A (ko) | 2019-01-25 |
JP2019020720A (ja) | 2019-02-07 |
JP6626535B2 (ja) | 2019-12-25 |
KR102338943B1 (ko) | 2021-12-13 |
US10867542B2 (en) | 2020-12-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109273485A (zh) | 电致发光显示器 | |
CN108258007B (zh) | Oled阵列基板、显示装置及其暗点修复方法 | |
US10720558B2 (en) | Light emitting diode chip and apparatus with reduced screen defect | |
KR102431929B1 (ko) | 표시장치 및 그 제조방법 | |
TWI645240B (zh) | 顯示裝置 | |
CN108230991A (zh) | 发光二极管显示装置 | |
CN109786421A (zh) | 一种显示装置、显示背板及制作方法 | |
CN108267903A (zh) | 显示装置、使用其的多屏幕显示装置及其制造方法 | |
CN108987437A (zh) | 发光显示装置及其制造方法 | |
US10790344B2 (en) | Display device and method for manufacturing the same | |
CN108122536A (zh) | 显示装置 | |
US11289635B2 (en) | Light emitting diode display apparatus and multi screen display apparatus using the same | |
CN106952616B (zh) | 有机发光显示面板及包括该面板的有机发光显示装置 | |
KR102526611B1 (ko) | 표시장치 | |
US11049439B2 (en) | Display device, tiling electronic device and method for repairing a display device | |
CN107978690A (zh) | 显示装置 | |
CN111009552B (zh) | 显示装置 | |
TWI644424B (zh) | 顯示裝置 | |
CN108122947A (zh) | 柔性显示装置 | |
CN110390900A (zh) | 显示器装置以及拼接式电子装置 | |
US20240005865A1 (en) | Light emitting display apparatus and method of repairing the same | |
US20240008325A1 (en) | Light emitting display apparatus and method of repairing the same | |
US20220140060A1 (en) | Electroluminescence display device | |
KR20230103569A (ko) | 표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |