CN109256455B - Full-color Micro-LED display structure with light effect extraction and no pixel interference and manufacturing method thereof - Google Patents
Full-color Micro-LED display structure with light effect extraction and no pixel interference and manufacturing method thereof Download PDFInfo
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Abstract
The invention relates to a full-color Micro-LED display structure with light efficiency extraction and no pixel interference and a manufacturing method thereof. The invention uses blue LED chip to excite green quantum dot layer in red/G unit in R unit to convert into red/green light; meanwhile, the light efficiency of the Micro-LED is improved by utilizing the distributed Bragg reflection layer in the microstructure, the light emitting efficiency in the vertical direction is improved by utilizing the reflection layer and the Micro lens array in the microstructure, and the color interference of adjacent pixels is prevented, so that the light efficiency extraction and the full-color Micro-LED display without pixel interference are realized.
Description
Technical Field
The invention relates to the field of semiconductor display, in particular to a full-color Micro-LED display structure with light effect extraction and no pixel interference and a manufacturing method thereof.
Background
Micro-LED display is to miniaturize traditional LEDs to form a Micro-scale pitch LED array to achieve ultra-high density pixel resolution. The Micro-LED display has the characteristic of self-luminescence, compared with OLED and LCD display, the Micro-LED display color is easier to debug accurately, has longer luminescence life and higher brightness, and has the advantages of being lighter, thinner and more power-saving. Due to the characteristics of high density, small size and ultra-multi-pixel, Micro-LED display will become a leader of third generation display technology which mainly has high fidelity, interactive and personalized display.
Currently, Micro-LED color display generally uses Metal Organic Chemical Vapor Deposition (MOCVD) to perform epitaxial growth on a GaN substrate, and then bonds the GaN substrate to a driving circuit substrate by means of chip bonding, wafer bonding, or film transfer to form display pixels. In terms of colorization technology, the method can be realized by a color conversion method, an RGB three-color method, an optical prism synthesis method, a method for emitting light with different wavelengths by controlling the structure and the size of the LED, and the like. Among them, the use of quantum dots to achieve color conversion is considered to be one of the most potential methods for colorization of Micro-LEDs. However, the technical problem of realizing colorization by using quantum dots is that the blue light LED chip has low efficiency of color conversion and light efficiency extraction for exciting the quantum dots to emit light, and in order to improve efficiency, the conventional method sets the thickness of the quantum dot light emitting layer to be very thick, so that the blue light for excitation can be completely absorbed, and the thickness will limit further reduction of Micro-LED display pixels, and will increase the device manufacturing cost and the overall thickness of the device. Meanwhile, after the quantum dots realize color conversion, adjacent pixels are easy to crosstalk when emitting light, and the quality of a colorized Micro-LED display image is influenced.
In the prior art, the realization of Micro-LED full-color display by using a quantum dot technology is a common process optimization means, and the prior art and preparation schemes are more. The Chinese patent CN106356386A realizes full-color display by filling red quantum dots and green quantum dots in a blue Micro-LED chip, but color crosstalk between pixels is easy; in addition, the quantum dots are directly coated on the surface of the chip, so that the process is unstable, the performance of the device is poor, and meanwhile, the patterning of the quantum dots is not easy to control, so that the manufacturing cost of the device is high; the Chinese patent CN108257949A discloses a micron-sized LED display device capable of achieving light efficiency extraction and color conversion, namely, an inverted trapezoidal liquid storage tank is prepared on a micron-sized blue LED chip table, red and green quantum dots are sequentially filled in an inverted trapezoidal liquid storage tank microstructure, an R unit, a G unit and a B unit are sequentially formed along the transverse direction of an LED chip, Micro-LED full-color display is achieved, and meanwhile, the light emitting efficiency of a device is improved by utilizing a microstructure array. However, the microstructure of the method is directly prepared on the surface of the micron-sized LED chip, the manufacturing process is complex, and the performance and the manufacturing cost of the device are seriously influenced; meanwhile, the quantum dot light emitting layer is easily exposed in the atmosphere, and the service life of the device is seriously reduced under the action of water and oxygen in the air; in addition, the direction of the light perpendicular to the surface of the device cannot be controlled, and crosstalk seriously occurs.
Disclosure of Invention
In view of the above, the present invention is directed to a full-color Micro-LED display structure with light extraction and no pixel interference and a method for manufacturing the same, which can not only use a blue LED chip to excite a green quantum dot layer in a red/G unit in an R unit to convert the green quantum dot layer into red/green light; meanwhile, red light/green light is transmitted from the top by the inverted trapezoid microstructure, unabsorbed blue light is reflected back to excite the quantum dot light emitting layer again, the light emitting efficiency of the Micro-LED is improved, the light emitting efficiency in the vertical direction can be improved by the reflecting layer and the Micro-lens array, color interference of adjacent pixels is prevented, and therefore light efficiency extraction and full-color Micro-LED display without pixel interference are achieved.
The invention is realized by adopting the following scheme: a full-color Micro-LED display structure with light efficiency extraction and no pixel interference comprises a substrate, a transparent substrate, LED chip arrays arranged on the surface of the substrate and in array arrangement, Micro lens arrays and inverted trapezoidal microstructure arrays respectively arranged on the upper surface and the lower surface of the transparent substrate, and a sealing frame body connected with the substrate and the transparent substrate; each inverted trapezoidal microstructure in the inverted trapezoidal microstructure array is aligned with each LED chip in the LED chip array one by one and packaged together; each microlens in the microlens array corresponds to each inverted trapezoidal microstructure one by one;
the inverted trapezoidal microstructure array is composed of a plurality of inverted trapezoidal microstructures, and the inverted trapezoidal microstructures and the LED chip sequentially form an R unit for displaying red light, a G unit for displaying green light and a B unit for displaying blue light along the transverse direction of the LED chip; the top of the inverted trapezoidal microstructure of the R unit is provided with a distributed Bragg reflection layer, the outer peripheral side of the inverted trapezoidal microstructure of the R unit is provided with a reflection layer, and a red quantum dot layer is filled in the reflection layer; the top of the inverted trapezoidal microstructure of the G unit is provided with a distributed Bragg reflection layer, the interior of the inverted trapezoidal microstructure is filled with a green quantum dot layer, and the outer peripheral side of the inverted trapezoidal microstructure of the G unit is provided with a reflection layer; the top of the inverted trapezoidal microstructure of the unit B is provided with a distributed Bragg reflection layer, and the peripheral side of the inverted trapezoidal microstructure of the unit B is provided with a reflection layer.
Further, the LED chip array is composed of a plurality of blue Micro-LED chips, the length of each blue Micro-LED chip is 1-50 micrometers, and the width of each blue Micro-LED chip is 1-50 micrometers; the transverse spacing between adjacent Micro-LED chips is greater than the length of the Micro-LED chips, the longitudinal spacing is greater than the width of the LED chips, and the transverse spacing/longitudinal spacing is less than 100 micrometers; the blue Micro-LED chip can emit blue light, and the blue light emitted by the blue Micro-LED chip is converted into red light or green light through the red quantum dot layer or the green quantum dot layer, so that colorized Micro-LED display is realized.
Further, the length of the bottom opening of the inverted trapezoidal microstructure is less than or equal to the length of the LED chip, and the width of the bottom opening of the inverted trapezoidal microstructure is less than or equal to the width of the LED chip; the length of the top of the inverted trapezoidal microstructure is greater than or equal to the length of the LED chip and is less than or equal to the transverse distance between the adjacent LED chips; the width of the top of the inverted trapezoidal microstructure is larger than or equal to the width of the LED chip and smaller than or equal to the longitudinal distance between the adjacent LED chips, and the depth of the inverted trapezoidal microstructure is 1-10 micrometers.
Furthermore, the red quantum dot layer is formed by mixing II-VI group or III-V group materials, and the thickness of the red quantum dot layer is less than or equal to the depth of the inverted trapezoidal microstructure; the green quantum dot layer is formed by mixing II-VI group or III-V group materials, and the thickness of the green quantum dot layer is less than or equal to the depth of the inverted trapezoidal microstructure.
Further, the distributed Bragg reflection layer is formed by stacking two layers of films with high refractive index and low refractive index, and the thickness of each layer of film is equal to
Determining the total thickness of the film, wherein the total thickness is determined by the stacking logarithm m of the R unit film or the G unit film and the stacking logarithm t of the B unit film, wherein m is more than t, N is the refractive index of the film, d is the thickness of the film, theta is the light incidence angle, lambda is the central wavelength, q is a constant, q is more than or equal to 0, when q is a positive odd number, the reflectivity has an extreme value, m and t are both positive integers or equal to N +0.5, and N is a positive integer;
the blue light emitted by the blue Micro-LED chip is partially transmitted by controlling the stacking logarithm t of the distributed Bragg reflection layer in the B unit; by controlling the stacking logarithm m of the distributed Bragg reflection layer in the R unit or the G unit, the blue light emitted by the blue Micro-LED chip excites the red light or the green light emitted by the red quantum dot layer or the green quantum dot layer to penetrate through the top, and the unabsorbed blue light is reflected back to the inverted trapezoidal microstructure to excite the red quantum dot layer or the green quantum dot light-emitting layer again, so that the emergent intensity of the red light or the green light is enhanced, and the luminous efficiency displayed by the Micro-LED is improved.
Furthermore, the reflecting layer is made of a high-reflectivity metal material with the thickness of 20 nanometers to 1 micrometer, the reflection of light is controlled by adjusting the material and the thickness of the reflecting layer, the light emission in the vertical direction is improved, and the interference of the light emission of adjacent pixels is prevented.
Further, the micro lens array is composed of a plurality of transparent square convex lenses; the length of the square convex lens is consistent with the length of the top of the inverted trapezoidal microstructure, the width of the square lens is consistent with the width of the top of the trapezoidal microstructure, and the curvature radius of the square lens is larger than the depth of the trapezoidal microstructure.
Further, the sealing frame body is made of transparent materials, the periphery of the substrate provided with the LED chips arranged in the array mode is coated through printing or ink-jet printing, and the thickness of the sealing frame body is 1-3 times of the sum of the depth of the inverted trapezoidal microstructure and the thickness of the chips.
The invention also provides a manufacturing method of the colorized Micro-LED display structure based on the light effect extraction and the pixel interference prevention, which specifically comprises the following steps of:
step S1: providing a blue Micro-LED chip array, and arranging the blue Micro-LED chips on the surface of the substrate in an array;
step S2: manufacturing an inverted trapezoidal microstructure;
step S3: preparing a transparent square micro-lens array on the other surface of the transparent substrate without the inverted trapezoidal microstructure by adopting a printing or ink-jet printing technology; the length of the square convex lens is consistent with the length of the top of the inverted trapezoidal microstructure, the width of the square lens is consistent with the width of the top of the trapezoidal microstructure, and the curvature radius of the square lens is larger than the depth of the trapezoidal microstructure;
step S4: coating a layer of transparent frame body on the periphery of a substrate provided with LED chips arranged in an array by adopting a printing or ink-jet printing technology, wherein the thickness of the frame body is 1-3 times of the sum of the depth of the trapezoidal microstructure and the thickness of the chip;
step S5: and aligning the central points of the LED chips with the central points of the bottoms of the inverted trapezoidal microstructures one by one, and exhausting and packaging.
Further, step S2 specifically includes the following steps:
step S21: providing a transparent substrate, coating a protective layer on the surface of the transparent substrate, and manufacturing the protective layer into a patterned trapezoidal liquid storage tank in array distribution by adopting photoetching, laser processing, ink-jet printing and sand blasting technologies; the trapezoidal liquid storage tanks are sequentially arranged along the transverse direction according to the R/G/B sequence, the length of the top opening of each trapezoidal liquid storage tank is less than or equal to the length of the LED chip, and the width of the top opening of each trapezoidal liquid storage tank is less than or equal to the width of the LED chip; the length of the bottom of the trapezoidal liquid storage tank is greater than or equal to the length of the LED chip and is less than or equal to the distance between the adjacent LED chips; the width of the bottom of the trapezoidal liquid storage tank is larger than or equal to the width of the LED chip and smaller than or equal to the distance between the adjacent LED chips, and the depth of the trapezoidal liquid storage tank is 1-10 micrometers;
step S22: plating distributed Bragg reflecting layers on the lower surfaces of the trapezoidal liquid storage tanks of the R unit, the G unit and the B unit by adopting a physical vapor deposition method or a chemical vapor deposition method, and controlling the wavelength of emergent light and the wavelength of reflected light by adjusting the stacking number m and t of the distributed Bragg reflecting layers;
step S23: filling red quantum dots in the R unit of the inverted trapezoidal liquid storage tank by using an ink-jet printing technology to form a red quantum dot light emitting layer, wherein the thickness of the quantum dots is less than or equal to the depth of the trapezoidal liquid storage tank;
step S24: filling green quantum dots in the trapezoidal liquid storage tank G unit by using an ink-jet printing technology to form a green quantum dot light-emitting layer, wherein the thickness of the quantum dots is less than or equal to the depth of the trapezoidal liquid storage tank;
step S25: removing the protective layer around the trapezoidal liquid storage tank;
step S26: plating a reflecting layer on the periphery of the inverted trapezoidal microstructure by adopting a physical vapor deposition method or a chemical vapor deposition method to form the R unit, the G unit and the B unit; the reflecting layer is made of a high-reflectivity metal material with the thickness of 20 nanometers to 1 micrometer, the reflection of light is controlled by adjusting the material and the thickness of the reflecting layer, the light emission in the vertical direction is improved, and the interference of the light emission of adjacent pixels is prevented.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention can use the blue LED chip to excite the green quantum dot layer in the red/G unit in the R unit to convert the green quantum dot layer into red light/green light, thereby realizing full-color Micro-LED display.
2. According to the invention, the distributed Bragg reflecting layers with different thicknesses are manufactured on the upper surface of the quantum dot light-emitting layer, so that light (red light or green light) emitted by the blue LED excited quantum dot light-emitting layer can penetrate through the top, and unabsorbed blue light is reflected back to the liquid storage tank to excite the quantum dot light-emitting layer again, and the light emitting efficiency displayed by the Micro-LED is enhanced.
3. The invention can also utilize the reflecting layer and the Micro lens array in the microstructure to improve the light-emitting efficiency in the vertical direction, prevent the color interference of adjacent pixels, realize light efficiency extraction and full-color Micro-LED display without pixel interference, and has important significance for quantum dots in the application of the Micro-LED in the full-color display.
4. The quantum dots are arranged in the inverted trapezoidal microstructure and aligned with the LED chip for exhaust packaging, so that the influence of oxygen and moisture on the quantum dots is reduced, and the service life of Micro-LED display is prolonged.
Drawings
Fig. 1 is a schematic view of a full-color Micro-LED display structure with light efficiency extraction and no pixel interference according to an embodiment of the invention.
Fig. 2 is a schematic structural manufacturing diagram of a full-color Micro-LED display with light efficiency extraction and no pixel interference in this embodiment.
Fig. 3 is a schematic cross-sectional view of a blue Micro-LED chip in this embodiment.
Fig. 4 is a schematic view illustrating the manufacturing process of the trapezoidal microstructure in this embodiment.
Fig. 5 is a schematic diagram illustrating the fabrication of a trapezoidal microstructure in this embodiment.
Fig. 6 is a schematic structural diagram of printing a frame sealing body around the substrate in this embodiment.
FIG. 7 is a schematic structural diagram of a microlens array formed on the opposite side of the trapezoidal microstructure in this embodiment.
Fig. 8 is a schematic structural diagram of the transparent substrate and the substrate alignment package in this embodiment. .
In the figure, 10 is a substrate, 11 is a blue Micro-LED chip, 12 is a transparent substrate, 121 is a protective layer, 122/123/124 is a trapezoidal liquid storage tank, 13 is an R unit, 14 is a G unit, 15 is a B unit, 132/142/152 is a distributed bragg reflection layer, 133 is a reflection layer, 131 is a red quantum dot light-emitting layer, 141 is a green quantum dot light-emitting layer, 16 is a microlens, and 17 is a frame body.
Detailed Description
The invention is further explained below with reference to the drawings and the embodiments.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to specific embodiments and accompanying drawings. In the figures, the thicknesses of layers and regions are exaggerated for clarity, but as a schematic illustration should not be considered to reflect strictly the geometric scaling. Here, the reference drawings are intended as an idealized embodiment of the present invention, and embodiments of the present invention should not be considered limited to the specific shapes of regions shown in the drawings, but include resulting shapes such as manufacturing-induced deviations. In the present embodiment, the rectangular or round shape is used for illustration, but this should not be construed as limiting the scope of the present invention. The size and the undulation period of the barrier rib undulation pattern in this embodiment have a certain range, and the size and the undulation period of the undulation pattern can be designed according to actual needs in actual production.
As shown in fig. 1, the present embodiment provides a full-color Micro-LED display structure with light efficiency extraction and no pixel interference, which includes a substrate 10, a transparent substrate 12, an LED chip array 11 disposed on the surface of the substrate 10 and arranged in an array, a microlens array 16 and an inverted trapezoid Micro-structure array respectively disposed on the upper and lower surfaces of the transparent substrate, and a sealing frame 17 connecting the substrate and the transparent substrate; each inverted trapezoidal microstructure in the inverted trapezoidal microstructure array is aligned with each LED chip in the LED chip array one by one and packaged together; each microlens in the microlens array corresponds to each inverted trapezoidal microstructure one by one;
the inverted trapezoidal microstructure array is composed of a plurality of inverted trapezoidal microstructures, and the inverted trapezoidal microstructures and the LED chip sequentially form an R unit 13 for displaying red light, a G unit 14 for displaying green light and a B unit 15 for displaying blue light along the transverse direction of the LED chip; wherein, the top of the inverted trapezoid microstructure of the R unit is provided with a distributed Bragg reflection layer 132, the periphery side is provided with a reflection layer 133, and the interior is filled with a red quantum dot layer 131; the top of the inverted trapezoidal microstructure of the G unit is provided with a distributed Bragg reflection layer 142, the interior of the inverted trapezoidal microstructure is filled with a green quantum dot layer 141, and the outer periphery side of the inverted trapezoidal microstructure is provided with a reflection layer 133; the top of the inverted trapezoid microstructure of the unit B is provided with a distributed Bragg reflection layer 152, and the periphery side is provided with a reflection layer 133.
In this embodiment, the LED chip array is composed of a plurality of blue Micro-LED chips, each blue Micro-LED chip has a length of 1 to 50 micrometers and a width of 1 to 50 micrometers; the transverse spacing between adjacent Micro-LED chips is greater than the length of the Micro-LED chips, the longitudinal spacing is greater than the width of the LED chips, and the transverse spacing/longitudinal spacing is less than 100 micrometers; the blue Micro-LED chip can emit blue light, and the blue light emitted by the blue Micro-LED chip is converted into red light or green light through the red quantum dot layer or the green quantum dot layer, so that colorized Micro-LED display is realized.
In this embodiment, the length of the bottom opening of the inverted trapezoidal microstructure is less than or equal to the length of the LED chip, and the width of the bottom opening of the inverted trapezoidal microstructure is less than or equal to the width of the LED chip; the length of the top of the inverted trapezoidal microstructure is greater than or equal to the length of the LED chip and is less than or equal to the transverse distance between the adjacent LED chips; the width of the top of the inverted trapezoidal microstructure is larger than or equal to the width of the LED chip and smaller than or equal to the longitudinal distance between the adjacent LED chips, and the depth of the inverted trapezoidal microstructure is 1-10 micrometers.
In this embodiment, the red quantum dot layer is formed by mixing II-VI or III-V materials, and the thickness of the red quantum dot layer is less than or equal to the depth of the inverted trapezoidal microstructure; the green quantum dot layer is formed by mixing II-VI group or III-V group materials, and the thickness of the green quantum dot layer is less than or equal to the depth of the inverted trapezoidal microstructure.
In this embodiment, the DBR layer is formed by stacking two films having high and low refractive indexes, and each film has a thickness of
Determining the total thickness of the film, wherein the total thickness is determined by the stacking logarithm m of the R unit film or the G unit film and the stacking logarithm t of the B unit film, wherein m is more than t, N is the refractive index of the film, d is the thickness of the film, theta is the light incidence angle, lambda is the central wavelength, q is a constant, q is more than or equal to 0, when q is a positive odd number, the reflectivity has an extreme value, m and t are both positive integers or equal to N +0.5, and N is a positive integer;
the blue light emitted by the blue Micro-LED chip is partially transmitted by controlling the stacking logarithm t of the distributed Bragg reflection layer in the B unit; by controlling the stacking logarithm m of the distributed Bragg reflection layer in the R unit or the G unit, the blue light emitted by the blue Micro-LED chip excites the red light or the green light emitted by the red quantum dot layer or the green quantum dot layer to penetrate through the top, and the unabsorbed blue light is reflected back to the inverted trapezoidal microstructure to excite the red quantum dot layer or the green quantum dot light-emitting layer again, so that the emergent intensity of the red light or the green light is enhanced, and the luminous efficiency displayed by the Micro-LED is improved.
In this embodiment, the reflective layer is made of a high-reflectivity metal material with a thickness of 20 nm to 1 μm, and the reflection of light is controlled by adjusting the material and thickness of the reflective layer, so as to improve the light emission in the vertical direction and prevent the interference of light emission of adjacent pixels.
In this embodiment, the microlens array is composed of a plurality of transparent square convex lenses; the length of the square convex lens is consistent with the length of the top of the inverted trapezoidal microstructure, the width of the square lens is consistent with the width of the top of the trapezoidal microstructure, and the curvature radius of the square lens is larger than the depth of the trapezoidal microstructure.
In this embodiment, the sealing frame body is made of a transparent material, and is coated on the periphery of the substrate provided with the array arrangement LED chips by printing or inkjet printing, and the thickness of the sealing frame body is 1 to 3 times of the sum of the depth of the inverted trapezoidal microstructure and the thickness of the chip.
As shown in fig. 2, the present embodiment further provides a manufacturing method of the full-color Micro-LED display structure based on the light effect extraction and without pixel interference, which specifically includes the following steps:
step S1: a blue Micro-LED chip 11 is provided on the surface of the substrate 10. The LED chips 11 are uniformly arranged on the surface of the substrate 10 along the transverse direction and the longitudinal direction, the length of each LED chip is 1-50 micrometers, the width of each LED chip is 1-50 micrometers, the transverse distance between every two adjacent LED chips is larger than the length of each LED chip, the longitudinal distance is larger than the width of each LED chip, and the transverse distance/the longitudinal distance is smaller than 100 micrometers. In the embodiment, preferably, the length and the width of the blue Micro-LED chip are both 30 micrometers, and the adjacent distance between the transverse direction and the longitudinal direction is both 80 micrometers, as shown in FIG. 3;
step S2: manufacturing an inverted trapezoidal microstructure; the manufacturing flow is shown in fig. 4, and the manufacturing process is shown in fig. 5.
Step S3: a layer of transparent frame body is coated on the periphery of a substrate provided with LED chips arranged in an array mode through a printing or ink-jet printing technology, and the thickness of the frame body is 1-3 times of the sum of the depth of the trapezoidal microstructure and the thickness of the chips. In this embodiment, a layer of transparent sealing frame 17 with a thickness of 10um is coated on the periphery of the substrate 10 on which the LED chips 11 arranged in an array are disposed, as shown in fig. 6;
step S4: transparent square microlenses were prepared on the surface of the transparent substrate 120 (the side without the trapezoidal microstructures) using printing or ink-jet printing techniques. The length of the square convex lens is consistent with that of the top of the trapezoidal microstructure, the width of the square lens is consistent with that of the top of the trapezoidal microstructure, and the curvature radius of the square lens is larger than or equal to the depth of the trapezoidal microstructure. The preferred inkjet printing technique of this embodiment produces transparent directional microlenses with a length and width of 80um and a radius of curvature of 1mm, as shown in fig. 7;
step S5: and aligning the central points of the LED chips and the central points of the bottoms of the trapezoidal microstructures one by one, exhausting and packaging to form the colorized Micro-LED display device with light efficiency extraction and no pixel interference as shown in figure 8.
In this embodiment, step S2 specifically includes the following steps:
step S21: providing a transparent substrate 12, coating a protective layer 121 on the surface of the transparent substrate 12, and manufacturing the protective layer 121 into patterned inverted trapezoidal liquid storage tanks 122/123/124 distributed in an array by adopting photoetching, laser processing, ink-jet printing and sand blasting technologies, wherein the inverted trapezoidal liquid storage tanks are sequentially arranged along the transverse direction according to the R/G/B sequence; the length of the top opening of the trapezoidal liquid storage tank is less than or equal to the length of the LED chip, and the width of the top opening of the trapezoidal liquid storage tank is less than or equal to the width of the LED chip; the length of the bottom of the trapezoidal liquid storage tank is larger than or equal to the length of the LED chip and smaller than or equal to the distance between the adjacent LED chips, the width of the bottom of the trapezoidal liquid storage tank is larger than or equal to the width of the LED chip and smaller than or equal to the distance between the adjacent LED chips, and the depth of the trapezoidal liquid storage tank is 1-10 micrometers. This embodiment prefers a photolithographic process to form trapezoidal reservoirs as in (a) of fig. 5, wherein the length and width of the bottom of each trapezoidal reservoir is 80 microns, the length and width of the top of each reservoir is 50 microns, the length and width of the top are 80 microns, and the depth is 5 microns;
step S22: the distributed bragg reflector 132 is plated at the bottom of the trapezoidal liquid storage tank 122 by adopting a physical vapor deposition or chemical vapor deposition method, and the wavelength of emergent light and the wavelength of reflected light are controlled by adjusting the thickness of a high-refractive-index film and a low-refractive-index film of the distributed bragg reflector. The distributed bragg reflector 132 is formed by stacking two thin films with high and low refractive indexes, including but not limited to: TiO22/Al2O3、TiO2/SiO2、Ta2O5/Al2O3、HfO2/SiO2The former is a high refractive index film, and the latter is a low refractive index film. The thickness of each layer of film of the distributed Bragg reflection layer is as follows
And determining the total thickness is determined by the stacking logarithm m of the thin films, wherein N is the refractive index of the thin films, d is the thickness of the thin films, theta is the light incident angle, lambda is the central wavelength, q is a constant, q is more than or equal to 0, and when q is a positive odd number, the reflectivity has an extreme value, m can be a positive integer or N +0.5, and N is a positive integer. The preferred ALD process of this embodiment plates 4.5 cycles of TiO on the lower surface of the trapezoidal reservoir 1222/Al2O3Distributed Bragg reflector layer of TiO2The thickness was 45nm and the thickness of Al2O3 was 67nm, as shown in FIG. 5 (b). 4.5 cycles of TiO2/Al2O3The distributed Bragg reflection layer formed by the laminated structure can enable the blue LED to excite the light emitted by the red quantum dot light-emitting layer to penetrate through the top, and the unabsorbed blue light is reflected back to the liquid storage tank to excite the red quantum dot light-emitting layer again, so that the intensity of emergent light is enhanced, and the light efficiency of the Micro-LED is improved;
step S23: and plating a distributed Bragg reflection layer 142 at the bottom of the trapezoidal liquid storage tank 123 by adopting a physical vapor deposition or chemical vapor deposition method, and controlling the wavelength of emergent light and the wavelength of reflected light by adjusting the thickness of a high-low refractive index film of the distributed Bragg reflection layer. The above-mentionedThe distributed bragg reflector 142 is formed by stacking two thin films with high and low refractive indices, the two thin films in combination including but not limited to: TiO22/Al2O3、TiO2/SiO2、Ta2O5/Al2O3、HfO2/SiO2The former is a high refractive index film, and the latter is a low refractive index film. The thickness of each layer of film of the distributed Bragg reflection layer is as follows
And determining the total thickness is determined by the stacking logarithm m of the thin films, wherein N is the refractive index of the thin films, d is the thickness of the thin films, theta is the light incident angle, lambda is the central wavelength, q is a constant, q is more than or equal to 0, and when q is a positive odd number, the reflectivity has an extreme value, m can be a positive integer or N +0.5, and N is a positive integer. In the preferred embodiment, the ALD process deposits TiO on the lower surface of the trapezoidal reservoir 123 for 2.5 cycles2/Al2O3Distributed Bragg reflector layer of TiO2Thickness of 45nm, Al2O3Has a thickness of 67nm, as shown in FIG. 5 (b). 2.5 cycles of TiO2/Al2O3The distributed Bragg reflection layer formed by the laminated structure can enable the blue LED to excite the light emitted by the green quantum dot light-emitting layer to penetrate through the top, and the unabsorbed blue light is reflected back to the liquid storage tank to excite the green quantum dot light-emitting layer again, so that the intensity of emergent light is enhanced, and the light efficiency of the Micro-LED is improved;
step S24: the distributed bragg reflector 152 is plated at the bottom of the trapezoidal liquid storage tank 124 by adopting a physical vapor deposition or chemical vapor deposition method, and the transmittance of the blue light of the B unit can be adjusted to be between 30% and 80% by controlling the thickness of a high-refractive-index thin film of the distributed bragg reflector 152. The preferred embodiment plates the lower surface of the trapezoidal reservoir 124 with 1.5 stacks of TiO2/Al2O3, wherein the TiO2 has a thickness of 45nm and the Al2O3 has a thickness of 67nm, as shown in FIG. 5 (b). The distributed Bragg reflection layer consisting of 1.5 stacked TiO2/Al2O3 laminated structures can adjust the transmittance of blue light of the B unit to be 60%;
step S25: inside the trapezoidal liquid storage tank 122 where the bragg reflection layer 132 is deposited, the red quantum dot light emitting layer 131 is filled using an inkjet printing technique. The thickness of the quantum dot light-emitting layer 131 is less than or equal to the depth of the trapezoidal liquid storage tank 122. In this embodiment, it is preferable that the inkjet printing process prints red quantum dots in the trapezoidal liquid storage tank 122, the thickness of the quantum dots is 5 microns, the red quantum dots are placed on a heating table at 40 ℃ and heated for 20 minutes, and the printed quantum dots are cured, as shown in fig. 5 (c);
step S26: in the trapezoidal liquid storage tank 123 where the bragg reflection layer 142 is deposited, the green quantum dot light emitting layer 141 is filled by using an ink jet printing technology. The thickness of the quantum dot light-emitting layer 141 is less than or equal to the depth of the trapezoidal liquid storage tank 123. In this embodiment, the green quantum dots are printed in the trapezoidal liquid storage tank 123 by the inkjet printing process, the quantum dots are 5 microns thick, and the printed quantum dots are cured by heating on a heating table at 40 ℃ for 20 minutes, as shown in fig. 5 (d);
step S27: a reflection layer 133 is plated on the periphery outside the trapezoidal microstructure by adopting a physical vapor deposition method or a chemical vapor deposition method and combining photoetching and stripping technologies, and the reflection layer 133 can reflect light emitted by the blue LED excited quantum dots along the inner side of the trapezoidal microstructure, so that the emergent quantity of vertical light is increased, and the crosstalk of adjacent emergent light is reduced; the reflective layer 133 is made of silver, aluminum or other metal material with high reflectivity, and has a thickness of 20 nm to 1 μm. In this embodiment, a metal Ag layer with a thickness of 80nm is preferably formed on the outer periphery of the trapezoid structure by photolithography, evaporation and lift-off processes as the reflective layer 133, and the specific process steps are shown in fig. 5 (e);
step S28: the protective layer around the trapezoidal reservoir is removed to form the R cell 13, the G cell 14, and the B cell 15, as shown in fig. 5 (f).
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.
Claims (10)
1. The utility model provides a light efficiency is drawed and full-colored Micro-LED display structure of no pixel interference which characterized in that: comprises a substrate and a transparent substrate; the LED chip array is arranged on the surface of the substrate in an array mode; the upper surface and the lower surface of the transparent substrate are respectively provided with a micro-lens array and an inverted trapezoidal micro-structure array; the substrate and the transparent substrate are packaged and connected through a sealing frame after exhausting, and the central points of the LED chips are aligned with the central points of the bottoms of the inverted trapezoidal microstructures one by one; each inverted trapezoidal microstructure in the inverted trapezoidal microstructure array is aligned with each LED chip in the LED chip array one by one and packaged together; each microlens in the microlens array corresponds to each inverted trapezoidal microstructure one by one;
the inverted trapezoidal microstructure array is composed of a plurality of inverted trapezoidal microstructures, and the inverted trapezoidal microstructures and the LED chip sequentially form an R unit for displaying red light, a G unit for displaying green light and a B unit for displaying blue light along the transverse direction of the LED chip; the top of the inverted trapezoidal microstructure of the R unit is provided with a distributed Bragg reflection layer, the outer peripheral side of the inverted trapezoidal microstructure of the R unit is provided with a reflection layer, and a red quantum dot layer is filled in the reflection layer; the top of the inverted trapezoidal microstructure of the G unit is provided with a distributed Bragg reflection layer, the interior of the inverted trapezoidal microstructure is filled with a green quantum dot layer, and the outer peripheral side of the inverted trapezoidal microstructure of the G unit is provided with a reflection layer; the top of the inverted trapezoidal microstructure of the unit B is provided with a distributed Bragg reflection layer, and the peripheral side of the inverted trapezoidal microstructure of the unit B is provided with a reflection layer.
2. The full-color Micro-LED display structure with light effect extraction and no pixel interference of claim 1, is characterized in that: the LED chip array is composed of a plurality of blue Micro-LED chips, the length of each blue Micro-LED chip is 1-50 micrometers, and the width of each blue Micro-LED chip is 1-50 micrometers; the transverse spacing between adjacent Micro-LED chips is greater than the length of the Micro-LED chips, the longitudinal spacing is greater than the width of the LED chips, and the transverse spacing/longitudinal spacing is less than 100 micrometers; the blue Micro-LED chip can emit blue light, and the blue light emitted by the blue Micro-LED chip is converted into red light or green light through the red quantum dot layer or the green quantum dot layer, so that colorized Micro-LED display is realized.
3. The full-color Micro-LED display structure with light effect extraction and no pixel interference of claim 1, is characterized in that: the length of the bottom surface opening of the inverted trapezoidal microstructure is less than or equal to the length of the LED chip, and the width of the bottom surface opening of the inverted trapezoidal microstructure is less than or equal to the width of the LED chip; the length of the top of the inverted trapezoidal microstructure is greater than or equal to the length of the LED chip and is less than or equal to the transverse distance between the adjacent LED chips; the width of the top of the inverted trapezoidal microstructure is larger than or equal to the width of the LED chip and smaller than or equal to the longitudinal distance between the adjacent LED chips, and the depth of the inverted trapezoidal microstructure is 1-10 micrometers.
4. The full-color Micro-LED display structure with light effect extraction and no pixel interference of claim 1, is characterized in that: the red quantum dot layer is formed by mixing II-VI group or III-V group materials, and the thickness of the red quantum dot layer is less than or equal to the depth of the inverted trapezoidal microstructure; the green quantum dot layer is formed by mixing II-VI group or III-V group materials, and the thickness of the green quantum dot layer is less than or equal to the depth of the inverted trapezoidal microstructure.
5. The full-color Micro-LED display structure with light effect extraction and no pixel interference of claim 1, is characterized in that: the distributed Bragg reflection layer is formed by stacking two layers of films with high refractive index and low refractive index, and the thickness of each layer of film is equal to
Determining the total thickness of the film, wherein the total thickness is determined by the stacking logarithm m of the R unit film or the G unit film and the stacking logarithm t of the B unit film, wherein m is more than t, N is the refractive index of the film, d is the thickness of the film, theta is the light incidence angle, lambda is the central wavelength, q is a constant, q is more than or equal to 0, when q is a positive odd number, the reflectivity has an extreme value, m and t are both positive integers or equal to N +0.5, and N is a positive integer;
the blue light emitted by the blue Micro-LED chip is partially transmitted by controlling the stacking logarithm t of the distributed Bragg reflection layer in the B unit; by controlling the stacking logarithm m of the distributed Bragg reflection layer in the R unit or the G unit, the blue light emitted by the blue Micro-LED chip excites the red light or the green light emitted by the red quantum dot layer or the green quantum dot layer to penetrate through the top, and the unabsorbed blue light is reflected back to the inverted trapezoidal microstructure to excite the red quantum dot layer or the green quantum dot light-emitting layer again, so that the emergent intensity of the red light or the green light is enhanced, and the luminous efficiency displayed by the Micro-LED is improved.
6. The full-color Micro-LED display structure with light effect extraction and no pixel interference of claim 1, is characterized in that: the reflecting layer is made of a high-reflectivity metal material with the thickness of 20 nanometers to 1 micrometer, the reflection of light is controlled by adjusting the material and the thickness of the reflecting layer, the light emission in the vertical direction is improved, and the interference of the light emission of adjacent pixels is prevented.
7. The full-color Micro-LED display structure with light effect extraction and no pixel interference of claim 1, is characterized in that: the micro lens array is composed of a plurality of transparent square convex lenses; the length of the square convex lens is consistent with the length of the top of the inverted trapezoidal microstructure, the width of the square convex lens is consistent with the width of the top of the inverted trapezoidal microstructure, and the curvature radius of the square convex lens is larger than the depth of the inverted trapezoidal microstructure.
8. The full-color Micro-LED display structure with light effect extraction and no pixel interference of claim 1, is characterized in that: the sealing frame body is made of transparent materials, the periphery of the substrate provided with the LED chips arranged in an array mode is coated through printing or ink-jet printing, and the thickness of the sealing frame body is 1-3 times of the sum of the depth of the inverted trapezoidal microstructure and the thickness of the chips.
9. A method for manufacturing a full-color Micro-LED display structure based on light effect extraction and pixel interference free of any one of claims 1-8, wherein the method comprises the following steps: the method comprises the following steps:
step S1: providing a blue Micro-LED chip array, and arranging the blue Micro-LED chips on the surface of the substrate in an array;
step S2: manufacturing an inverted trapezoidal microstructure;
step S3: preparing a transparent square convex lens array on the other surface of the transparent substrate without the inverted trapezoidal microstructure by adopting a printing or ink-jet printing technology; the length of the square convex lens is consistent with the length of the top of the inverted trapezoidal microstructure, the width of the square convex lens is consistent with the width of the top of the inverted trapezoidal microstructure, and the curvature radius of the square convex lens is greater than the depth of the inverted trapezoidal microstructure;
step S4: coating a layer of transparent frame body on the periphery of a substrate provided with LED chips arranged in an array by adopting a printing or ink-jet printing technology, wherein the thickness of the frame body is 1-3 times of the sum of the depth of the inverted trapezoidal microstructure and the thickness of the chip;
step S5: and aligning the central points of the LED chips with the central points of the bottoms of the inverted trapezoidal microstructures one by one, and exhausting and packaging.
10. The method for manufacturing the full-color Micro-LED display structure with light effect extraction and no pixel interference according to claim 9, is characterized in that: step S2 specifically includes the following steps:
step S21: providing a transparent substrate, coating a protective layer on the surface of the transparent substrate, and manufacturing the protective layer into a patterned trapezoidal liquid storage tank in array distribution by adopting photoetching, laser processing, ink-jet printing and sand blasting technologies; the trapezoidal liquid storage tanks are sequentially arranged along the transverse direction according to the R/G/B sequence, the length of the top opening of each trapezoidal liquid storage tank is less than or equal to the length of the LED chip, and the width of the top opening of each trapezoidal liquid storage tank is less than or equal to the width of the LED chip; the length of the bottom of the trapezoidal liquid storage tank is greater than or equal to the length of the LED chip and is less than or equal to the distance between the adjacent LED chips; the width of the bottom of the trapezoidal liquid storage tank is larger than or equal to the width of the LED chip and smaller than or equal to the distance between the adjacent LED chips, and the depth of the trapezoidal liquid storage tank is 1-10 micrometers;
step S22: plating distributed Bragg reflecting layers on the lower surfaces of the trapezoidal liquid storage tanks of the R unit, the G unit and the B unit by adopting a physical vapor deposition method or a chemical vapor deposition method, and controlling the wavelength of emergent light and the wavelength of reflected light by adjusting the stacking number m and t of the distributed Bragg reflecting layers;
step S23: filling red quantum dots in the R unit of the inverted trapezoidal liquid storage tank by using an ink-jet printing technology to form a red quantum dot light emitting layer, wherein the thickness of the quantum dots is less than or equal to the depth of the trapezoidal liquid storage tank;
step S24: filling green quantum dots in the trapezoidal liquid storage tank G unit by using an ink-jet printing technology to form a green quantum dot light-emitting layer, wherein the thickness of the quantum dots is less than or equal to the depth of the trapezoidal liquid storage tank;
step S25: removing the protective layer around the trapezoidal liquid storage tank;
step S26: plating a reflecting layer on the periphery of the inverted trapezoidal microstructure by adopting a physical vapor deposition method or a chemical vapor deposition method to form the R unit, the G unit and the B unit; the reflecting layer is made of a high-reflectivity metal material with the thickness of 20 nanometers to 1 micrometer, the reflection of light is controlled by adjusting the material and the thickness of the reflecting layer, the light emission in the vertical direction is improved, and the interference of the light emission of adjacent pixels is prevented.
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