CN112782944A - Micro-LED photoetching process based on RGBW - Google Patents

Micro-LED photoetching process based on RGBW Download PDF

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Publication number
CN112782944A
CN112782944A CN202110106865.6A CN202110106865A CN112782944A CN 112782944 A CN112782944 A CN 112782944A CN 202110106865 A CN202110106865 A CN 202110106865A CN 112782944 A CN112782944 A CN 112782944A
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sub
array substrate
light
pixel
pixels
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周雄图
叶金宇
张永爱
吴朝兴
林坚普
林志贤
郭太良
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Fuzhou University
Mindu Innovation Laboratory
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Mindu Innovation Laboratory
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/7005—Production of exposure light, i.e. light sources by multiple sources, e.g. light-emitting diodes [LED] or light source arrays
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

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Abstract

The invention provides an RGBW-based Micro-LED photoetching process, which comprises the following steps of: step S101, coating photoresist on the light receiving surface of the array substrate; step S102, adjusting a mask plate to enable the projection of the center of each light-transmitting area on the mask plate on the array substrate to be positioned at the center of the display pixel corresponding to the light-transmitting area; wherein the distance between the mask plate and the array substrate is a first distance
Figure 100004_DEST_PATH_IMAGE002
(ii) a Step S103, using four groups of light sources to pass through a maskExposing the photoresist in the light-transmitting area of the diaphragm plate, wherein each group of light sources corresponds to a group of sub-pixel structures with the same color, and the illumination intensity and the illumination time of each group of light sources enable the illumination on the photoresist parts corresponding to the sub-pixel structures with different colors to be different; s104, dissolving photoresist on the array substrate; s105, drying the array substrate, and etching the sub-pixels to form liquid storage tanks with different depths; the invention can solve the problem of unbalanced brightness of the sub-pixels caused by different sealing glue thicknesses of the quantum dots.

Description

Micro-LED photoetching process based on RGBW
Technical Field
The invention relates to the technical field of displays, in particular to an RGBW-based Micro-LED photoetching process.
Background
Micro-LEDs (Micro light emitting diodes) are a new generation of display technology, with higher brightness, better light emitting efficiency, but lower power consumption than existing OLED (organic light emitting diode) technologies. According to the Micro-LED technology, the LED structure is designed to be thin-film, Micro-miniature and arrayed, and the size of the Micro-LED is only about 1-10 mu m. The Micro-LED has the greatest advantages of micron-scale spacing, addressing control and single-point drive luminescence of each pixel (pixel), long service life and wide application range.
Compared with the traditional RGB display screen, the RGBW display screen comprises a white (W) sub-pixel besides a red (R), a green (G) and a blue (B) sub-pixel, and the transmittance of an LCD, the luminous efficiency of an OLED display unit area and the like can be greatly improved by adding the white sub-pixel, so that the purposes of low power consumption, energy conservation and environmental protection can be realized.
Quantum dots QDs are semiconductor nanoparticles composed of group II-VI or III-V elements, typically ranging in size from a few nanometers to tens of nanometers. Due to the existence of quantum confinement effect, the originally continuous energy band of the quantum dot material is changed into a discrete energy level structure, and the quantum dot material can emit visible light after being excited by the outside. The quantum dot material has a smaller full width at half maximum of a light-emitting peak, and the light-emitting color can be adjusted through the size, structure or components of the quantum dot material, so that the color saturation and color gamut can be improved when the quantum dot material is applied to the Micro-LED display field. Due to the characteristics of quantum dot materials, the quantum dot materials are often applied to Micro-LEDs as light-emitting crystal grains.
In quantum dot packaging, liquid storage tanks (grooves) with the same size are generally adopted when the quantum dots corresponding to the four colors of red, green, blue and white are packaged, but the quantum dot colloid packaging amounts corresponding to different colors are different, so that when the liquid storage tanks are sealed with glue, the sealing glue thickness is different, further, the light-emitting brightness of the sub-pixels with different colors is unbalanced, and the display effect is poor.
Disclosure of Invention
The invention provides an RGBW-based Micro-LED photoetching process which can solve the problem of unbalanced brightness of sub-pixels caused by different sealing adhesive thicknesses of quantum dots.
The invention adopts the following technical scheme.
A Micro-LED photoetching process based on RGBW is used for preparing a liquid storage tank of a sub-pixel structure in a Micro-LED display pixel on an array substrate, wherein the display pixels are arranged in an array at the array substrate; each sub-pixel structure in the display pixel is rectangular and has a first length
Figure 100002_DEST_PATH_IMAGE002
The width is the first width
Figure 100002_DEST_PATH_IMAGE004
The gap between sub-pixels in the same display pixel is the first gap
Figure 100002_DEST_PATH_IMAGE006
(ii) a Each sub-pixel structure comprisesA reservoir, said process comprising the steps of:
step S101, coating photoresist on a light receiving surface of an array substrate;
step S102, adjusting a mask plate to enable the projection of the center of each light-transmitting area on the mask plate on the array substrate to be positioned at the center of the display pixel corresponding to the light-transmitting area; wherein the distance between the mask plate and the array substrate is a first distance
Figure 100002_DEST_PATH_IMAGE008
；
Step S103, exposing the photoresist on the array substrate through the light-transmitting area of the mask by using four groups of light sources, wherein each group of light sources corresponds to one group of sub-pixel structures with the same color, and the included angles between the incident directions of the four groups of light sources and the array substrate are equal to each other and are first angles
Figure 100002_DEST_PATH_IMAGE010
The first distance
Figure 100002_DEST_PATH_IMAGE008A
Satisfy the requirement of
Figure 100002_DEST_PATH_IMAGE012
The illumination intensity and the illumination time of each group of light sources are determined according to the volume of the quantum dot glue body which needs to be filled in the sub-pixels with the colors corresponding to the group of light sources, so that the illumination on the photoresist parts corresponding to the sub-pixel structures with different colors is different;
step S104, dissolving the photoresist on the array substrate by using a developing solution;
and S105, drying the array substrate, and etching the sub-pixels to form four liquid storage tanks with different depths corresponding to the sub-pixel structures with different colors.
In step S103, if the relative position between the mask and the array substrate is maintained and the first distance d between the mask and the array substrate is maintained, four sets of light sources with different incident directions are used to simultaneously expose different sets of the sub-pixel structures through the light-transmitting regions of the mask.
In step S103, if the light sources are controlled, the incident directions of the four groups of light sources are kept unchanged, and the first angle is set
Figure 100002_DEST_PATH_IMAGE014
And if the distance d is not changed, adjusting the mask plate, and changing the first distance d between the mask plate and the array substrate to enable four groups of light sources to expose different groups of sub-pixels.
Each display pixel comprises four sub-pixel structures, including a red sub-pixel structure, a green sub-pixel structure, a blue sub-pixel structure and a white sub-pixel structure; the sub-pixel structures are all rectangles with the same size in the exposure illumination direction, and the size of each sub-pixel structure is the same as that of a light-transmitting area of the mask corresponding to the sub-pixel structure.
In the display pixels, a UV-LED is arranged below each liquid storage tank.
In the display pixels, each liquid storage tank is filled with quantum dot colloid used for emitting light of the sub-pixels, and the volume of the quantum dot colloid corresponds to the depth of the liquid storage tank.
After the liquid storage tanks are filled with the quantum dot colloid, sealing glue treatment is carried out on each liquid storage tank to form a sealing glue layer with consistent thickness.
The photoresist is a positive photoresist.
The display pixels are arranged in a longitudinal and transverse array mode at the array substrate; in each display pixel, the distribution positions of the sub-pixel structures of different colors are the same.
The invention has the beneficial effects that:
1. the invention maintains the relative position of the mask and the array substrate unchanged, and adopts four groups of light sources with different incidence directions to expose different groups of sub-pixels through the light-transmitting areas of the mask. The invention can complete the exposure of all sub-pixels without contraposition by maintaining the relative positions of the mask and the array substrate, thereby avoiding incomplete exposure caused by contraposition errors.
2. The invention is based on
Figure DEST_PATH_IMAGE012A
Can adjust the first distance
Figure DEST_PATH_IMAGE008AA
Or a first angle
Figure DEST_PATH_IMAGE010A
So that four groups of light sources expose different groups of sub-pixels. Thereby ensuring the accuracy of sub-pixel exposure.
3. In the invention, each group of light sources corresponds to a group of sub-pixels with the same color, and the illumination intensity and the illumination time of each group of light sources are determined according to the volume of the quantum dot adhesive body to be filled in the sub-pixels with the color corresponding to the group of light sources. The photoresist has different solubility in the developing solution due to different illumination intensity and illumination time, and the characteristics can ensure that the depths formed by the liquid storage tanks corresponding to different groups of light sources during etching are different.
In summary, the four groups of light sources with different illumination intensities and illumination times are adopted to expose the four sub-pixels with different colors at the same time, and then the four liquid storage tanks with different depths are formed through development and etching, so that the liquid storage tanks of the sub-pixels with different colors can package quantum dot colloids with corresponding volumes, the sealing glue thickness of each liquid storage tank can be ensured to be consistent, the light-emitting brightness balance of the sub-pixels is improved, and the display effect is improved.
The invention can effectively solve the problem of unbalanced brightness of the sub-pixels caused by different sealing adhesive thicknesses of the quantum dots, and in addition, the Micro-LED based on the RGBW is beneficial to displaying with higher brightness in an outdoor environment by adding the white pixels, thereby improving the watching adaptability of users.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a schematic flow chart of a Micro-LED lithography process based on RGBW according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a three-dimensional structure of a Micro-LED according to an embodiment of the present invention;
FIG. 3 is a schematic plane structure diagram of a Micro-LED according to an embodiment of the present invention;
FIG. 4 is a first length provided by an embodiment of the present invention
Figure DEST_PATH_IMAGE002A
First width
Figure DEST_PATH_IMAGE004A
First gap, first gap
Figure DEST_PATH_IMAGE006A
First angle of
Figure DEST_PATH_IMAGE010AA
And a first distance
Figure DEST_PATH_IMAGE008AAA
The solving of the relation between the two is shown schematically;
FIG. 5 is a schematic diagram of a relationship between a sub-pixel and a transparent region according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a three-dimensional structure of a Micro-LED in the prior art according to an embodiment of the present invention;
FIG. 7 is a schematic plane structure diagram of a Micro-LED in the prior art according to an embodiment of the present invention;
in the figure: 201-red subpixel architecture; 202-green sub-pixel structure; 203-blue sub-pixel structure; 204-white subpixel architecture; 205-an array substrate;
301-an adhesive sealing layer, 302-a liquid storage tank, 303-a UV-LED, and 304-an array substrate;
501-a light-transmitting area; 502-subpixel architecture;
601-reservoir in traditional technology; 602-array substrate in conventional technology;
701-a sealant layer in the traditional technology; 702-reservoir in conventional technology; 703-UV-LEDs in conventional technology.
Detailed Description
The invention discloses an RGBW-based Micro-LED photoetching process, and a person skilled in the art can appropriately improve technical details to realize the process by referring to the content. It is expressly intended that all such similar substitutes and modifications which would be obvious to one skilled in the art are deemed to be included in the invention. While the methods and applications of this invention have been described in terms of preferred embodiments, it will be apparent to those of ordinary skill in the art that variations and modifications in the methods and applications described herein, as well as other suitable variations and combinations, may be made to implement and use the techniques of this invention without departing from the spirit and scope of the invention.
In the Micro-LED display technology, quantum dots corresponding to different color sub-pixels generate different light absorption energies with the same brightness, so that quantum dot colloids with different shapes are required to be adopted for enabling the sub-pixels with different colors to emit light uniformly.
However, in the conventional technology, the size of each liquid storage tank of the Micro-LED array substrate is generally the same, as shown in fig. 6, the liquid storage tanks with the same size have different thicknesses when the liquid storage tanks of the sub-pixels with different colors are sealed with glue, as shown in fig. 7, the different thicknesses of the sealed glue cause the luminance of the quantum dots after the light is emitted through the glue sealing layer to be different, so that the luminance of the sub-pixels with different colors is unbalanced, and the display effect is poor.
It should be noted that the color presented by each sub-pixel is determined by the filled quantum dots. The quantum dots can emit colored light when being stimulated by light or electricity, the color of the light is determined by the composition material and the size and the shape of the quantum dots, the larger the general particle is, the longer the particle can absorb, and the smaller the particle is, the shorter the particle can absorb. The quantum dots with the size of 8 nanometers can absorb red of long wave and show blue, and the quantum dots with the size of 2 nanometers can absorb blue of short wave and show red. This property enables the quantum dots to change the color of light emitted by the light source. The quantum dots corresponding to the sub-pixels of different colors are also different in size. The white light emitted by the white sub-pixel is composite light, so that quantum dots with different sizes are filled in quantum dot colloid filled in a liquid storage tank of the white sub-pixel.
In this example, as shown in the figure, a Micro-LED lithography process based on RGBW is used to prepare the liquid storage tank 302 of the sub-pixel structure 502 in the Micro-LED display pixels on the array substrate 304, and the display pixels are arranged in an array at the array substrate; each sub-pixel structure in the display pixel is rectangular and has a first length
Figure DEST_PATH_IMAGE002AA
The width is the first width
Figure DEST_PATH_IMAGE004AA
The gap between sub-pixels in the same display pixel is the first gap
Figure DEST_PATH_IMAGE006AA
(ii) a Each sub-pixel structure comprising a reservoir, the process comprising the steps of:
step S101, coating photoresist on a light receiving surface of an array substrate;
step S102, adjusting a mask plate to enable the projection of the center of each light-transmitting area on the mask plate on the array substrate to be positioned at the center of the display pixel corresponding to the light-transmitting area; wherein the distance between the mask plate and the array substrate is a first distance
Figure DEST_PATH_IMAGE008AAAA
；
It should be noted that the reticle includes a light-transmitting region 501 and a non-light-transmitting region. The light-transmitting area is used for exposing each sub-pixel in the display pixel through the light source, and the non-light-transmitting area is used for shielding the light source, so that the photoresist at other positions on the array substrate is prevented from being exposed and dissolved in the developing solution in the subsequent process.
In this embodiment, the projection of the center of each light-transmitting area on the mask onto the array substrate is located at the center of the display pixel corresponding to the light-transmitting area, so that the light source can expose four sub-pixels with different colors at the same time, thereby increasing the production efficiency.
Step S103, exposing the photoresist on the array substrate through the light-transmitting area of the mask by using four groups of light sources, wherein each group of light sources corresponds to one group of sub-pixel structures with the same color, and the included angles between the incident directions of the four groups of light sources and the array substrate are equal to each other and are first angles
Figure DEST_PATH_IMAGE010AAA
The first distance
Figure DEST_PATH_IMAGE008AAAAA
Satisfy the requirement of
Figure DEST_PATH_IMAGE012AA
The illumination intensity and the illumination time of each group of light sources are determined according to the volume of the quantum dot glue body which needs to be filled in the sub-pixels with the colors corresponding to the group of light sources, so that the illumination on the photoresist parts corresponding to the sub-pixel structures with different colors is different;
it should be noted that, if the relative position between the mask and the array substrate is maintained unchanged, the problem that the sub-pixel partial region is repeatedly exposed or not exposed due to the alignment error of exposing the sub-pixels with different colors by moving the mask can be solved. Four groups of light sources with different incidence directions are adopted to simultaneously penetrate through the light-transmitting area of the mask plate to expose the sub-pixels of different groups. Therefore, the exposure of all the sub-pixels can be completed by only one-time irradiation, so that the exposure efficiency is improved, and the productivity is improved.
Wherein, each group of light sources corresponds to a group of sub-pixels with the same color, and the incident directions of the four groups of light sources are equal to the included angle of the array substrate and are first angles
Figure DEST_PATH_IMAGE010AAAA
First distance of
Figure DEST_PATH_IMAGE008AAAAAA
Satisfy the requirement of
Figure DEST_PATH_IMAGE012AAA
. The illumination intensity and the illumination time of each group of light sources are determined according to the volume of the quantum dot glue body to be filled in the sub-pixels of the color corresponding to the group of light sources.
It should be noted that, because the quantum dots of the sub-pixels with different colors are required to produce the same brightness under the irradiation of the UV-LEDs with the same power, the quantum dots need to be different, that is, the volumes of the quantum dots are different. Therefore, under the condition that the volumes of the quantum dot colloids are different, the sealant layers of the sub-pixels with different colors are required to be the same, and the depths of the liquid storage tanks for loading the quantum dot colloids are required to be different. The solubility of the photoresist adopted by the embodiment of the invention in the developing solution is increased along with the increase of the illumination intensity and the illumination time, and the photoresist can be exposed by utilizing light sources with different illumination time and illumination intensity according to the characteristic, so that liquid storage tanks with different depths are etched. In summary, the invention determines how deep the liquid storage tank is used according to the volume of the quantum dot colloid corresponding to the sub-pixels with different colors, and then determines the irradiation intensity and the irradiation time of the light source according to the depth of the liquid storage tank.
Optionally, in a specific embodiment, the quantum dot colloids corresponding to the red, green, blue, and white sub-pixels generate light with the same brightness, and the volume of the quantum dot colloid is required: red subpixel < white subpixel < green subpixel < blue subpixel.
Four groups of light sources with different incident directions respectively comprise: the light source comprises a first light source, a second light source, a third light source and a fourth light source, wherein the first light source exposes the red sub-pixel, the second light source exposes the green sub-pixel, the third light source exposes the blue sub-pixel, and the fourth light source exposes the white sub-pixel.
When the illumination time of the first light source, the second light source, the third light source and the fourth light source is the same, the illumination intensity is as follows: first light source < fourth light source < second light source < third light source.
When the illumination intensities of the first light source, the second light source and the third light source are the same, the illumination time is as follows: first light source < fourth light source < second light source < third light source.
When the illumination time and the illumination intensity are different, after the illumination of four groups of light sources, the solubility of the photoresist on each color sub-pixel needs to be ensured: red subpixel < white subpixel < green subpixel < blue subpixel.
Step S104, dissolving the photoresist on the array substrate by using a developing solution;
it should be noted that, since the present invention uses a positive photoresist, only the exposed photoresist can be dissolved in the developer, and the solubility of the photoresist increases with the increase of the illumination time and the illumination intensity. After the same time of dissolution, the depths of the grooves formed on the sub-pixels with different colors are different, and the depths of the liquid storage tanks formed by etching are different during the subsequent etching.
And S105, drying the array substrate, and etching the sub-pixels to form four liquid storage tanks with different depths corresponding to the sub-pixel structures with different colors.
It should be noted that, after the development, the array substrate is dried first to etch the substrate. Because the etching is divided into dry etching and wet etching, liquid materials may be used for etching, and if the etching is not dried, the etching materials are easily polluted.
In step S103, if the relative position between the mask and the array substrate is maintained and the first distance d between the mask and the array substrate is maintained, four sets of light sources with different incident directions are used to simultaneously expose different sets of the sub-pixel structures through the light-transmitting regions of the mask.
In step S103, if the light sources are controlled, the incident directions of the four groups of light sources are kept unchanged, and the first angle is set
Figure DEST_PATH_IMAGE014A
And if the distance d is not changed, adjusting the mask plate, and changing the first distance d between the mask plate and the array substrate to enable four groups of light sources to expose different groups of sub-pixels.
Each display pixel comprises four sub-pixel structures, including a red sub-pixel structure 201, a green sub-pixel structure 202, a blue sub-pixel structure 203 and a white sub-pixel structure 204; the sub-pixel structures are all rectangles with the same size in the exposure illumination direction, and the size of each sub-pixel structure is the same as that of a light-transmitting area of the mask corresponding to the sub-pixel structure.
In the display pixels, a UV-LED303 is arranged below each liquid storage tank.
In the display pixels, each liquid storage tank is filled with quantum dot colloid used for emitting light of the sub-pixels, and the volume of the quantum dot colloid corresponds to the depth of the liquid storage tank.
It should be noted that quantum dot colloid which is stimulated to emit red light is added into the liquid storage tank of the red sub-pixel, quantum dot colloid which is stimulated to emit green light is added into the liquid storage tank of the green sub-pixel, quantum dot colloid which is stimulated to emit blue light is added into the liquid storage tank of the blue sub-pixel, quantum dot colloid which is added into the liquid storage tank of the white sub-pixel comprises multiple quantum dots with different sizes, and the quantum dots are stimulated to emit light with different colors to be compounded into white light.
After the liquid storage tanks are filled with the quantum dot colloid, the liquid storage tanks are subjected to sealing treatment to form a sealing adhesive layer 301 with a consistent thickness.
The photoresist is a positive photoresist.
Note that the photoresist is an organic compound, and the solubility thereof in the developing solution changes after exposure to the ultraviolet light in the above-mentioned exposure step. A positive photoresist is a type of photoresist in which, after exposure, exposed portions are soluble in a developing solution and unexposed portions are insoluble. The solubility of the positive photoresist adopted by the embodiment of the invention in the developing solution is improved along with the increase of the illumination intensity and the illumination time.
The display pixels are arranged in a longitudinal and transverse array mode at the array substrate; in each display pixel, the distribution positions of the sub-pixel structures of different colors are the same.
In this example, optionally, the first length
Figure DEST_PATH_IMAGE002AAA
First width
Figure DEST_PATH_IMAGE004AAA
First gap, first gap
Figure DEST_PATH_IMAGE006AAA
First angle of
Figure DEST_PATH_IMAGE010AAAAA
And a first distance
Figure DEST_PATH_IMAGE008AAAAAAA
The relation between
Figure DEST_PATH_IMAGE012AAAA
Can be obtained as shown in fig. 4, a is the center of the light-transmitting region, B is the center of a certain sub-pixel, 0 is the center of the display pixel, AO is the first distance
Figure DEST_PATH_IMAGE008AAAAAAAA
Angle AB0 is a first angle
Figure DEST_PATH_IMAGE010AAAAAA
(ii) a Then
Figure DEST_PATH_IMAGE016
And is
Figure DEST_PATH_IMAGE018
(ii) a Thus, it is possible to provide
Figure DEST_PATH_IMAGE012AAAAA
。
Optionally, the process further comprises:
controlling the mask plate to keep a first distance d between the mask plate and the array substrate unchanged;
adjusting the incident direction of the four groups of light sources to change the first angle
Figure DEST_PATH_IMAGE014AA
Four groups of light sources are used for exposing sub-pixels of different groups.
It should be noted that, four groups of light sources are adjusted to expose sub-pixels of different groups, so that the problem that exposure effect is poor due to the fact that a light-transmitting area cannot correspond to each display pixel as a result of moving a mask module is avoided.
Optionally, the process further comprises:
controlling the light sources to maintain the incident directions of the four groups of light sources unchanged to make the first angle
Figure DEST_PATH_IMAGE014AAA
Keeping the same;
and adjusting the mask plate, and changing the first distance d between the mask plate and the array substrate to enable the four groups of light sources to expose different groups of sub-pixels.
It should be noted that, when the array substrate is loaded, the mask plate needs to be moved, and at that time, the mask plate is simultaneously adjusted, and the first distance d between the mask plate and the array substrate is changed, so that the four groups of light sources expose different groups of sub-pixels. This may effectively save total manufacturing time.
Optionally, the four sub-pixels included in the display pixel are rectangles with equal size, and the size of the sub-pixels is the same as that of the light-transmitting area.
Optionally, in a specific embodiment, as shown in fig. 5, 501 is a light-transmitting region, 502 is four sub-pixels, and the light-transmitting region 501 and the sub-pixels 502 are rectangles of equal size. The light-transmitting area is arranged in the sub-pixel and is in an equal-size rectangle, the light source is ensured to penetrate through the light-transmitting area to expose the whole sub-pixel, the partial position of the sub-pixel is prevented from being not exposed, and the condition that the exposure of the sub-pixel which does not belong to the light-transmitting area is influenced by the overlarge light-transmitting area is also avoided.
The embodiment of the invention maintains the relative position of the mask and the array substrate unchanged, and adopts four groups of light sources with different incidence directions to simultaneously expose different groups of sub-pixels through the light-transmitting areas of the mask. The embodiment of the invention can complete the exposure of all the sub-pixels without carrying out alignment by maintaining the relative positions of the mask and the array substrate, thereby avoiding incomplete exposure caused by alignment errors. Embodiments of the invention are as follows
Figure DEST_PATH_IMAGE012AAAAAA
Can adjust the first distance
Figure DEST_PATH_IMAGE008AAAAAAAAA
Or a first angle
Figure DEST_PATH_IMAGE010AAAAAAA
So that four groups of light sources expose different groups of sub-pixels. Thereby ensuring the accuracy of sub-pixel exposure. In the embodiment of the invention, each group of light sources corresponds to one group of sub-pixels with the same color, and the illumination intensity and the illumination time of each group of light sources are determined according to the volume of the quantum glue colloid to be filled in the sub-pixels with the color corresponding to the group of light sources. The photoresist has different solubility in the developing solution due to different illumination intensity and illumination time, and the characteristics can ensure that the depths formed by the liquid storage tanks corresponding to different groups of light sources during etching are different. In summary, the embodiment of the invention exposes the four sub-pixels with different colors by adopting four groups of light sources with different illumination intensities and illumination times at the same time, and then forms four liquid storage tanks with different depths by developing and etching, so that the liquid storage tanks of the sub-pixels with different colors can package quantum dot colloids with corresponding volumes, the sealing thickness of each liquid storage tank can be ensured to be consistent, the light-emitting brightness balance of the sub-pixels can be improved, and the display effect can be improved.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
All the embodiments in the present specification are described in a related manner, and the same and similar parts among the embodiments may be referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.

Claims (9)

1. The utility model provides a Micro-LED photoetching technology based on RGBW for prepare the reservoir of Micro-LED display pixel inner sub-pixel structure on the array substrate which characterized in that: the display pixels are arranged in an array mode at the array substrate; each sub-pixel structure in the display pixel is rectangular and has a first length
Figure DEST_PATH_IMAGE002
The width is the first width
Figure DEST_PATH_IMAGE004
The gap between sub-pixels in the same display pixel is the first gap
Figure DEST_PATH_IMAGE006
(ii) a Each sub-pixel structure comprising a reservoir, the process comprising the steps of:
step S101, coating photoresist on a light receiving surface of an array substrate;
step S102, adjusting the mask plate to enable the projection of the center of each light-transmitting area on the mask plate on the array substrate to be positioned at the same position with the light-transmitting areaA center of the corresponding display pixel; wherein the distance between the mask plate and the array substrate is a first distance
Figure DEST_PATH_IMAGE008
；
Step S103, exposing the photoresist on the array substrate through the light-transmitting area of the mask by using four groups of light sources, wherein each group of light sources corresponds to one group of sub-pixel structures with the same color, and the included angles between the incident directions of the four groups of light sources and the array substrate are equal to each other and are first angles
Figure DEST_PATH_IMAGE010
The first distance
Figure DEST_PATH_IMAGE008A
Satisfy the requirement of
Figure DEST_PATH_IMAGE012
The illumination intensity and the illumination time of each group of light sources are determined according to the volume of the quantum dot glue body which needs to be filled in the sub-pixels with the colors corresponding to the group of light sources, so that the illumination on the photoresist parts corresponding to the sub-pixel structures with different colors is different;
step S104, dissolving the photoresist on the array substrate by using a developing solution;
and S105, drying the array substrate, and etching the sub-pixels to form four liquid storage tanks with different depths corresponding to the sub-pixel structures with different colors.
2. The RGBW-based Micro-LED lithography process of claim 1, wherein: in step S103, if the relative position between the mask and the array substrate is maintained and the first distance d between the mask and the array substrate is maintained, four sets of light sources with different incident directions are used to simultaneously expose different sets of the sub-pixel structures through the light-transmitting regions of the mask.
3. The RGBW-based Micro-LED lithography process of claim 1, wherein: in step S103, if the light sources are controlled, the incident directions of the four groups of light sources are kept unchanged, and the first angle is set
Figure DEST_PATH_IMAGE014
And if the distance d is not changed, adjusting the mask plate, and changing the first distance d between the mask plate and the array substrate to enable four groups of light sources to expose different groups of sub-pixels.
4. The RGBW-based Micro-LED lithography process of claim 1, wherein: each display pixel comprises four sub-pixel structures, including a red sub-pixel structure, a green sub-pixel structure, a blue sub-pixel structure and a white sub-pixel structure; the sub-pixel structures are all rectangles with the same size in the exposure illumination direction, and the size of each sub-pixel structure is the same as that of a light-transmitting area of the mask corresponding to the sub-pixel structure.
5. The RGBW-based Micro-LED lithography process of claim 1, wherein: in the display pixels, a UV-LED is arranged below each liquid storage tank.
6. The RGBW-based Micro-LED lithography process of claim 1, wherein: in the display pixels, each liquid storage tank is filled with quantum dot colloid used for emitting light of the sub-pixels, and the volume of the quantum dot colloid corresponds to the depth of the liquid storage tank.
7. The RGBW-based Micro-LED lithography process of claim 6, wherein: after the liquid storage tanks are filled with the quantum dot colloid, sealing glue treatment is carried out on each liquid storage tank to form a sealing glue layer with consistent thickness.
8. The RGBW-based Micro-LED lithography process of claim 1, wherein: the photoresist is a positive photoresist.
9. The RGBW-based Micro-LED lithography process of claim 1, wherein: the display pixels are arranged in a longitudinal and transverse array mode at the array substrate; in each display pixel, the distribution positions of the sub-pixel structures of different colors are the same.
CN202110106865.6A 2021-01-27 2021-01-27 Micro-LED photoetching process based on RGBW Pending CN112782944A (en)

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US20020009176A1 (en) * 2000-05-19 2002-01-24 Mitsuaki Amemiya X-ray exposure apparatus
US20020030165A1 (en) * 1998-10-12 2002-03-14 Shinji Suzuki Proximity exposure method by oblique irradiation with light
CN206573851U (en) * 2017-01-20 2017-10-20 李继刚 Optical machining system
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CN109256455A (en) * 2018-09-19 2019-01-22 福州大学 A kind of light efficiency extraction and the true color Micro-LED without pixel interference show structure and its manufacturing method
CN109979958A (en) * 2019-04-23 2019-07-05 深圳市华星光电半导体显示技术有限公司 MicroLED display panel
CN111258111A (en) * 2020-03-18 2020-06-09 京东方科技集团股份有限公司 Color film substrate, preparation method thereof and display panel
CN211828774U (en) * 2020-06-01 2020-10-30 深圳市奥视微科技有限公司 Quantum dot light conversion film and micro display

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020030165A1 (en) * 1998-10-12 2002-03-14 Shinji Suzuki Proximity exposure method by oblique irradiation with light
US20020009176A1 (en) * 2000-05-19 2002-01-24 Mitsuaki Amemiya X-ray exposure apparatus
CN108267903A (en) * 2016-12-30 2018-07-10 乐金显示有限公司 Display device, multiscreen display apparatus and its manufacturing method using it
CN206573851U (en) * 2017-01-20 2017-10-20 李继刚 Optical machining system
CN109256455A (en) * 2018-09-19 2019-01-22 福州大学 A kind of light efficiency extraction and the true color Micro-LED without pixel interference show structure and its manufacturing method
CN109979958A (en) * 2019-04-23 2019-07-05 深圳市华星光电半导体显示技术有限公司 MicroLED display panel
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