CN109256452B - Manufacturing method of LED device and LED device - Google Patents
Manufacturing method of LED device and LED device Download PDFInfo
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- CN109256452B CN109256452B CN201811376057.6A CN201811376057A CN109256452B CN 109256452 B CN109256452 B CN 109256452B CN 201811376057 A CN201811376057 A CN 201811376057A CN 109256452 B CN109256452 B CN 109256452B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000002096 quantum dot Substances 0.000 claims abstract description 79
- 239000003292 glue Substances 0.000 claims abstract description 35
- 238000004806 packaging method and process Methods 0.000 claims abstract description 32
- 238000009413 insulation Methods 0.000 claims abstract description 27
- 239000010410 layer Substances 0.000 claims description 106
- 239000012790 adhesive layer Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 24
- 238000007641 inkjet printing Methods 0.000 claims description 10
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 239000005022 packaging material Substances 0.000 claims 2
- 230000009467 reduction Effects 0.000 abstract description 10
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000016776 visual perception Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 33
- 239000008393 encapsulating agent Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000000741 silica gel Substances 0.000 description 8
- 229910002027 silica gel Inorganic materials 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 7
- 239000000843 powder Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 238000001746 injection moulding Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- XNVJGKKANSYGKB-UHFFFAOYSA-N [Zn].[Se].[Cd] Chemical compound [Zn].[Se].[Cd] XNVJGKKANSYGKB-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention is suitable for the technical field of LEDs, and provides a manufacturing method of an LED device and the LED device. According to the invention, the heat insulation glue layer and the quantum dot layer are formed on the chip and the first packaging glue layer, the quantum dot layer is prevented from being influenced by heat from the chip and the lead frame by the heat insulation glue layer, the quantum dot layer can convert light rays emitted by the chip, the quantum dot has small interference on the light rays emitted by the chip, and thus the obtained LED device is used for the liquid crystal reduction technology, the color gamut of the liquid crystal display is wider, the color saturation is high, the picture is closer to reality, and the visual perception of a user is improved.
Description
Technical Field
The invention belongs to the technical field of LEDs, and particularly relates to a manufacturing method of an LED device and the LED device.
Background
The LED (Light-Emitting Diode) includes a chip disposed in a support and a package adhesive layer packaged on the chip. Including silica gel and phosphor powder in the encapsulation glue film, after the chip was passed through to the electric current, aroused the chip of different grade type to send the light of different colours, the phosphor powder will be aroused to the phosphor powder in the light irradiation encapsulation glue film, forms single color through disturbing or absorbing the light of different wavelength. If the blue light chip excites the fluorescent powder to emit yellow light, the blue light and the yellow light are mixed to obtain white light, and the white light LED is obtained.
However, since the phosphor powder interferes with the light-emitting wavelength of the chip, the single color formed in this way is applied to the liquid crystal reduction technology, which will cause the attenuation of color reduction, so that the color range of the reduction display is greatly reduced compared with the original color range which can be displayed by the LED, thereby reducing the color gamut range which can be expressed by the liquid crystal display and reducing the color saturation of the picture.
Disclosure of Invention
The invention aims to provide a manufacturing method of an LED device, and aims to solve the technical problem that the LED device is poor in color reducibility.
The invention is realized in this way, and a method for manufacturing an LED device includes:
providing a lead frame, and forming a bracket on the lead frame; the bracket comprises a first groove and a second groove, the second groove is communicated with the first groove, the second groove is positioned above the first groove, the first groove is provided with a first bottom surface, and the projection of the first groove in the direction vertical to the first bottom surface is positioned inside the projection of the second groove in the direction vertical to the first bottom surface; a portion of the lead frame is located within the first groove;
placing a chip in the first groove, electrically connecting the chip with the lead frame, and forming a first packaging adhesive layer in the first groove and on the chip;
forming a heat insulation glue layer in the second groove and on the first packaging glue layer;
forming a quantum dot layer in the second groove and on the heat insulation glue layer; and
and forming a second packaging adhesive layer on the quantum dot layer.
In one embodiment, the thermal insulation glue layer is formed by an inkjet printing method.
In one embodiment, the quantum dot layer is formed by an inkjet printing method.
In an embodiment, the bracket further includes a third groove, the third groove is communicated with the second groove, the third groove is located above the second groove, and a projection of the second groove is located inside the third groove; the second packaging adhesive layer is formed in the third groove.
In one embodiment, the second packaging adhesive layer is formed by an ink-jet printing method.
In an embodiment, the material of the thermal insulation glue layer is transparent silica gel.
Another object of the present invention is to provide an LED device, comprising:
the bracket comprises a first groove and a second groove, the second groove is positioned above the first groove, the second groove is communicated with the first groove, the first groove is provided with a first bottom surface, and the projection of the first groove in the direction vertical to the first bottom surface is positioned inside the projection of the second groove in the direction vertical to the first bottom surface;
the lead frame is connected with the support into a whole and is partially positioned in the first groove;
the chip is arranged in the first groove and is electrically connected with the lead frame;
the first packaging adhesive layer is arranged in the first groove and covers the chip;
the heat insulation glue layer is arranged in the second groove and covers the first packaging glue layer;
the quantum dot layer is arranged in the second groove and covers the heat insulation glue layer; and
and the second packaging adhesive layer covers the quantum dot layer.
In an embodiment, the bracket further includes a third groove, the third groove is communicated with a second groove, the third groove is located above the second groove, and a projection of the second groove in a direction perpendicular to the first bottom surface is located inside the third groove in the direction perpendicular to the first bottom surface; the second packaging adhesive layer is formed in the third groove.
In one embodiment, the chip is a blue chip, and the quantum dot layer includes red and green quantum dots.
In an embodiment, the material of the thermal insulation glue layer is transparent silica gel.
The invention provides a manufacturing method of an LED device, wherein a support comprises a first groove and a second groove which are communicated with each other, the second groove is positioned above the first groove, the projection of the first groove is positioned in the second groove, a chip and a first packaging adhesive layer are arranged in the first groove, a heat insulation adhesive layer and a quantum dot layer are formed on the second groove and the first packaging adhesive layer, a second packaging adhesive layer is formed on the quantum dot layer, the quantum dot layer is prevented from being influenced by heat from the chip and a lead frame by the heat insulation adhesive layer, the quantum dot layer can convert light emitted by the chip, the quantum dot layer has small interference on the light emitted by the chip, and the obtained LED device is used for a liquid crystal reduction technology, so that the color gamut of a liquid crystal display is wider, the color saturation is high, the picture is closer to reality, and the visual sensation of a user is improved.
Drawings
Fig. 1 is a flowchart of a method for manufacturing an LED device according to an embodiment of the present invention;
fig. 2 to fig. 5 are schematic diagrams of step S1 of a method for manufacturing an LED device according to an embodiment of the present invention;
fig. 6 is a schematic diagram of step S2 of a method for manufacturing an LED device according to an embodiment of the present invention;
fig. 7 is a schematic diagram of step S3 of a method for manufacturing an LED device according to an embodiment of the present invention;
fig. 8 is a schematic diagram of step S4 of a method for manufacturing an LED device according to an embodiment of the present invention;
fig. 9 is a schematic diagram of step S5 of a method for manufacturing an LED device according to an embodiment of the present invention;
fig. 10 is a schematic diagram of step S6 of a method for manufacturing an LED device according to an embodiment of the present invention;
fig. 11 is a schematic diagram of step S7 of a method for manufacturing an LED device according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of an LED device according to an embodiment of the present invention.
The designations in the figures mean:
the semiconductor package structure comprises a lead frame 1, an electrode pin 10, a support 2, a first groove 21, a first bottom surface 211, a second groove 22, a second bottom surface 221, a third groove 23, a third bottom surface 231, a reflecting layer 3, a bottom packaging adhesive layer 4, a chip 5, a first packaging adhesive layer 6, a heat insulation adhesive layer 7, a quantum dot layer 8, a second packaging adhesive layer 9 and a bonding pad 30;
an LED device 100.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly or indirectly secured to the other element. When an element is referred to as being "connected to" another element, it can be directly or indirectly connected to the other element. The terms "upper", "lower", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the patent. The terms "first", "second" and "first" are used merely for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features. The meaning of "plurality" is two or more unless specifically limited otherwise.
In order to explain the technical solution of the present invention, the following detailed description is made with reference to the specific drawings and examples.
Referring to fig. 1 to 11, the present invention first provides a method for manufacturing an LED device, which includes the following steps:
step S1, as shown in fig. 2 to 4, provides a lead frame 1, and forms a support 2 on the lead frame 1.
As shown in fig. 3, the lead frame 1 includes two electrode pins 10, and the two electrode pins 10 are disposed at intervals and are respectively used for connecting the positive electrode and the negative electrode of an external power supply.
The holder 2 is formed on the lead frame 1 by injection molding. Specifically, the lead frame 1 is first placed in a mold and fixed, and then a molten plastic material is injected into the mold by an injection molding process, so that the bracket 2 and the lead frame 1 are connected into a whole. The support 2 relatively fixes the two electrode pins 10 which are arranged at intervals.
The first recess 21 has a first bottom surface 211 therein, and a portion of the two electrode pins 10 adjacent to each other is disposed on the first bottom surface 211.
As shown in fig. 2 and 5, the bracket 2 includes a first groove 21, a second groove 22, and a third groove 23, where the second groove 22 is formed above the first groove 21 and communicates with the first groove 21, the third groove 23 is formed above the second groove 22 and communicates with the second groove 22, a projection of the first groove 21 in a direction perpendicular to the first bottom surface is located in the second groove 22, and a projection of the second groove 22 in a direction perpendicular to the first bottom surface is located in the third groove 23. That is, the first groove 21 is exposed in the first groove 21, and the second groove 22 is exposed in the third groove 23, as viewed from above the bracket 2.
In one embodiment, each of the first groove 21, the second groove 22 and the third groove 23 has a cylindrical shape, the central axes of the first groove 21 and the second groove 22 are coincident, the diameter of the third groove 23 is larger than that of the second groove 22, and the diameter of the second groove 22 is larger than that of the first groove 21.
The second groove 22 has an annular second bottom surface 221 formed on the periphery of the first groove 21, and the third groove 23 has an annular third bottom surface 231 formed on the periphery of the second groove 22.
In step S2, as shown in fig. 6, a reflective layer 3 is formed in the first groove 21 and on the lead frame 1, and a bottom encapsulant layer 4 is formed on the reflective layer 3.
The reflective layer 3 is used for electrically connecting with the lead frame 1 and reflecting light, and the reflective layer 3 is made of metal material such as silver. The underfill layer 4 serves to protect the reflective layer 3 and also serves to prevent the material of the reflective layer 3 from being oxidized. The bottom packaging adhesive layer 4 can be made of transparent silica gel.
The reflecting layer 3 is also provided with a bonding pad 30 protruding from the bottom transparent adhesive layer.
Step S3, as shown in fig. 7, the chip 5 is placed in the first recess 21, and two ends of the chip 5 are respectively connected to the pads 30 of the two electrode pins 10 by gold wires, so as to electrically connect the chip 5 and the two electrode pins 10.
The chip 5 is used for emitting light, and according to the difference of the chip 5 materials, the light with different colors can be emitted.
In one embodiment, the chip 5 is a blue chip 5, including a gallium nitride material, for emitting blue light having a peak wavelength of 465 nm.
Step S4, as shown in fig. 8, a first transparent encapsulant is poured into the first recess 21 and the chip 5, and cured to form a first encapsulant layer 6. The first transparent encapsulating material can be transparent silica gel.
Optionally, the first encapsulating glue 6 reaches the upper edge of the first recess 21.
In step S5, as shown in fig. 9, a thermal insulation glue layer 7 is formed on the second groove 22 and the first encapsulating glue layer 6.
This step employs an inkjet printing process. Specifically, a transparent heat insulating material is uniformly sprayed on the surface of the first encapsulation layer, and after curing, the heat insulating glue layer 7 is obtained. Optionally, the edge of the thermal insulation glue layer 7 is disposed on the second bottom surface 221. The transparent heat insulating material may be transparent silica gel.
The second groove 22 of the bracket 2 serves to confine the transparent insulating material so that it can completely cover the first encapsulation layer.
In step S6, as shown in fig. 10, a quantum dot layer 8 is formed in the second groove 22 and on the thermal insulating paste layer 7.
This step employs an inkjet printing process. Specifically, a solution containing a quantum dot material is uniformly sprayed on the surface of the first encapsulation layer, and after drying and curing, the quantum dot layer 8 is obtained. The ink-jet printing process can avoid the waste of the quantum dot material, save the quantum dot material and ensure the quantum dot material to be uniformly distributed.
Optionally, the edge of the quantum dot layer 8 reaches the upper edge of the second groove 22.
The second groove 22 of the support 2 also plays a role in limiting the flow of the solution of the quantum dot material, so that the quantum dot material can completely cover the thermal insulation glue layer 7.
The quantum dot is a structure of a semiconductor material which is gradually reduced from a bulk phase to a certain critical dimension (1-20 nm), the fluctuation of a carrier of the quantum dot becomes remarkable, the motion is limited, the kinetic energy is increased, and a corresponding electronic structure is changed from a bulk phase continuous energy level structure to quasi-split discontinuity, which is called as a quantum size effect. The relatively common semiconductor nano-particles, i.e. quantum dots, mainly comprise II-VI, II-V and IV-VI quantum dots, and the absorption and emission wavelengths of the semiconductor nano-particles change along with the size change of the semiconductor nano-particles. In addition, the quantum dot material has the advantages of concentrated light emission spectrum, high color purity, easy adjustment of light emission color through the size, structure or components of the quantum dot material, and the like, and can effectively improve the color gamut and color reduction capability of the display device.
In particular, the quantum dot material includes one or more of group II-VI quantum dot materials, group III-V quantum dot materials, such as one or more of ZnCdSe2 (selenium cadmium zinc), CdSe (cadmium selenide), CdTe (cadmium telluride), InP (indium phosphide), InAs (indium arsenide).
In a particular embodiment, the quantum dots include red quantum dots capable of absorbing blue light and emitting red light and quantum dots capable of absorbing blue light and emitting green light. The size of a luminous core of the red light quantum dot is 5.0-5.5 nm, and the size of a luminous core of the green light quantum dot is 3.0-3.5 nm. One part of the blue light emitted by the blue light chip 5 is converted into red light and green light by the quantum dots, and the other part of the blue light is mixed with the red light and the green light to obtain white light.
Optionally, the quantum dot layer 8 is formed to have a thickness of 0.5 to 5 μm.
Because the heat insulation layer is arranged between the quantum dot layer 8 and the first packaging adhesive layer 6, the heat of the chip 5 and the lead frame 1 can be effectively prevented from influencing the property of the quantum dot material in the quantum dot layer 8, and the luminous performance of the LED device is prevented from being influenced.
In step S7, as shown in fig. 11, a second encapsulant layer 9 is formed in the third groove 23 and on the quantum dot layer 8.
The second encapsulant layer 9 serves to protect the quantum dot layer 8. Specifically, the second transparent encapsulating material is uniformly sprayed on the quantum dot layer 8 by adopting an ink-jet printing mode, the third groove 23 plays a role in limiting the second transparent encapsulating material, and the cured second encapsulating adhesive layer 9 can completely cover the quantum dot layer 8. The second transparent encapsulating material may be transparent silicone.
Therefore, the LED device 100 is obtained, light emitted by the chip 5 is converted by the quantum dot layer 8 and then emitted, the quantum dot layer 8 has small interference on the wavelength of the light emitted by the chip 5, and the LED device 100 is applied to the liquid crystal reduction technology, so that the color gamut and the color reduction capability of the display device can be effectively improved, and the color saturation of the picture of the display device is improved.
The present invention also provides an LED device 100, as shown in fig. 12, which is manufactured by the above-mentioned method for manufacturing the LED device 100. Specifically, the LED device 100 includes a support 2, a lead frame 1 connected to the support 2, and a reflective layer 3, a bottom encapsulant layer 4, a chip 5, a first encapsulant layer 6, a thermal insulation adhesive layer 7, a quantum dot layer 8, and a second encapsulant layer 9 disposed in the support 2.
Specifically, as shown in fig. 3, the lead frame 1 includes two electrode pins 10, and the two electrode pins 10 are disposed at intervals and are respectively used for connecting the positive electrode and the negative electrode of the external power source.
The bracket 2 is formed on the lead frame 1 by injection molding, so that the bracket 2 and the lead frame 1 are fixedly connected into a whole. The support 2 relatively fixes the two electrode pins 10 which are arranged at intervals.
The first recess 21 has a first bottom surface 211 therein, and a portion of the two electrode pins 10 adjacent to each other is disposed on the first bottom surface 211.
As shown in fig. 2 and 5, the bracket 2 includes a first groove 21, a second groove 22, and a third groove 23, where the second groove 22 is formed above the first groove 21 and communicates with the first groove 21, the third groove 23 is formed above the second groove 22 and communicates with the second groove 22, a projection of the first groove 21 in a direction perpendicular to the first bottom surface is located in the second groove 22, and a projection of the second groove 22 in a direction perpendicular to the first bottom surface is located in the third groove 23. That is, the first groove 21 is exposed in the first groove 21, and the second groove 22 is exposed in the third groove 23, as viewed from above the bracket 2.
The first groove 21, the second groove 22 and the third groove 23 are all cylindrical, the central axes of the first groove 21 and the second groove 22 are all overlapped, the diameter of the third groove 23 is larger than that of the second groove 22, and the diameter of the second groove 22 is larger than that of the first groove 21.
The second groove 22 has an annular second bottom surface 221 formed on the periphery of the first groove 21, and the third groove 23 has an annular third bottom surface 231 formed on the periphery of the second groove 22.
The reflective layer 3 is formed on the two electrode leads 10 in the first recess 21, and the bottom encapsulant layer 4 is formed on the reflective layer 3.
The reflective layer 3 is used for electrically connecting with the lead frame 1 and reflecting light, and the reflective layer 3 is made of metal material such as silver. The bottom packaging adhesive layer 4 is used for protecting the reflective layer 3 and also can be used for preventing the material of the reflective layer 3 from being oxidized, and the material can be transparent silica gel.
The reflecting layer 3 is also provided with a bonding pad 30 protruding out of the bottom packaging adhesive layer 4.
The two ends of the chip 5 are respectively connected to the bonding pads 30 on the reflective layer 3 through gold wires, so that the chip 5 is electrically connected with the two electrode pins 10.
The chip 5 is used for emitting light, and according to the difference of the chip 5 materials, the light with different colors can be emitted.
In one embodiment, the chip 5 is a blue chip 5, including a gallium nitride material, for emitting blue light having a peak wavelength of 465 nm.
The first encapsulant layer 6 is formed in the first recess 21 and on the chip 5, and may be made of transparent silicone.
In one embodiment, the first encapsulant layer 6 reaches the upper edge of the first recess 21.
The thermal insulation glue layer 7 is formed in the second groove 22 and on the first packaging glue layer 6. The material of the thermal insulation glue layer 7 can be transparent silica gel. Optionally, the edge of the thermal insulation glue layer 7 is formed on the second bottom surface 221.
A quantum dot layer 8 is formed within the second recess 22 and on the thermal insulating glue layer 7. Optionally, the edge of the quantum dot layer 8 reaches the upper edge of the second groove 22.
Specifically, the quantum dot material comprises one or more of II-VI group quantum dot materials and III-V group quantum dot materials, such as one or more of ZnCdSe2, CdSe, CdTe, InP and InAs.
In a particular embodiment, the quantum dots include red quantum dots capable of absorbing blue light and emitting red light and quantum dots capable of absorbing blue light and emitting green light. The size of a luminous core of the red light quantum dot is 5.0-5.5 nm, and the size of a luminous core of the green light quantum dot is 3.0-3.5 nm. One part of the blue light emitted by the blue light chip 5 is converted into red light and green light by the quantum dots, and the other part of the blue light is mixed with the red light and the green light to obtain white light.
Optionally, the quantum dot layer 8 has a thickness of 0.5 to 5 μm.
Because the heat insulation layer is arranged between the quantum dot layer 8 and the first packaging adhesive layer 6, the heat of the chip 5 and the lead frame 1 can be effectively prevented from influencing the property of the quantum dot material in the quantum dot layer 8, and the luminous performance of the LED device 100 is prevented from being influenced.
The second encapsulation layer 9 is formed within the third recess 23 and on the quantum dot layer 8.
The second encapsulation layer 9 is used to protect the quantum dot layer 8, and the material thereof may be transparent silicone.
In the LED device 100 provided in the embodiment of the present invention, the light emitted from the chip 5 is converted by the quantum dot layer 8 and then emitted, and the quantum dot layer 8 has small interference to the wavelength of the light emitted from the chip 5, so that the LED device 100 applied to the liquid crystal reduction technology can effectively improve the color gamut and the color reduction capability of the display device, and improve the color saturation of the picture of the display device.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (8)
1. A method for manufacturing an LED device is characterized by comprising the following steps:
providing a lead frame, and forming a bracket on the lead frame; the bracket comprises a first groove and a second groove, the second groove is communicated with the first groove, the second groove is positioned above the first groove, the first groove is provided with a first bottom surface, the second groove is provided with a second bottom surface, and the projection of the first groove in the direction perpendicular to the first bottom surface is positioned inside the projection of the second groove in the direction perpendicular to the first bottom surface; a portion of the lead frame is located within the first groove;
placing a chip in the first groove, electrically connecting the chip with the lead frame, and forming a first packaging adhesive layer in the first groove and on the chip; the first packaging adhesive layer is made of a transparent packaging material;
forming a heat insulation glue layer in the second groove and on the first packaging glue layer by an ink-jet printing method, wherein the edge of the heat insulation glue layer is formed on the second bottom surface;
forming a quantum dot layer in the second groove and on the thermal insulation glue layer by an ink-jet printing method, wherein the edge of the quantum dot layer reaches the upper edge of the second groove; and
and forming a second packaging adhesive layer on the quantum dot layer.
2. The method of manufacturing an LED device according to claim 1, wherein the holder further includes a third groove, the third groove communicating with a second groove, the third groove being located above the second groove, a projection of the second groove in a direction perpendicular to the first bottom surface being located inside a projection of the third groove in a direction perpendicular to the first bottom surface; the second packaging adhesive layer is formed in the third groove.
3. The method for manufacturing an LED device according to claim 2, wherein the second encapsulating adhesive layer is formed by an inkjet printing method.
4. The method of claim 1, wherein the thermal insulating glue layer is made of transparent silicone.
5. An LED device manufactured by the method for manufacturing an LED device according to any one of claims 1 to 4, comprising:
the bracket comprises a first groove and a second groove, the second groove is positioned above the first groove, the second groove is communicated with the first groove, the first groove is provided with a first bottom surface, the second groove is provided with a second bottom surface, and the projection of the first groove in the direction perpendicular to the first bottom surface is positioned inside the projection of the second groove in the direction perpendicular to the first bottom surface;
the lead frame is connected with the support into a whole and is partially positioned in the first groove;
the chip is arranged in the first groove and is electrically connected with the lead frame;
the first packaging adhesive layer is arranged in the first groove and covers the chip; the first packaging adhesive layer is made of a transparent packaging material;
the heat insulation glue layer is arranged in the second groove and covers the first packaging glue layer, and the edge of the heat insulation glue layer is formed on the second bottom surface;
the quantum dot layer is arranged in the second groove and covers the heat insulation glue layer, and the edge of the quantum dot layer reaches the upper edge of the second groove; and
and the second packaging adhesive layer covers the quantum dot layer.
6. The LED device of claim 5, wherein the support further comprises a third groove, the third groove being in communication with a second groove, the third groove being located above the second groove, a projection of the second groove in a direction perpendicular to the first bottom surface being located inward of the third groove in a direction perpendicular to the first bottom surface; the second packaging adhesive layer is formed in the third groove.
7. The LED device of claim 5 wherein the chip is a blue chip and the quantum dot layer comprises red and green quantum dots.
8. The LED device of claim 5, wherein the thermal insulating glue layer is made of transparent silicone.
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