CN114019713A - Light-emitting component, display screen and manufacturing method of light-emitting component - Google Patents

Light-emitting component, display screen and manufacturing method of light-emitting component Download PDF

Info

Publication number
CN114019713A
CN114019713A CN202110666576.1A CN202110666576A CN114019713A CN 114019713 A CN114019713 A CN 114019713A CN 202110666576 A CN202110666576 A CN 202110666576A CN 114019713 A CN114019713 A CN 114019713A
Authority
CN
China
Prior art keywords
light
layer
electrode layer
liquid crystal
polarized light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110666576.1A
Other languages
Chinese (zh)
Inventor
王磊磊
刘政明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Original Assignee
Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd filed Critical Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
Priority to CN202110666576.1A priority Critical patent/CN114019713A/en
Publication of CN114019713A publication Critical patent/CN114019713A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528Polarisers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133528Polarisers
    • G02F1/133548Wire-grid polarisers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133606Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes

Abstract

The invention relates to a light-emitting component, a display screen and a manufacturing method of the light-emitting component. The liquid crystal unit arranged between the adjacent light-emitting units can also block the light emitted by the adjacent light-emitting units, so that the light blocking structure between the adjacent light-emitting units is enriched, and the application and development of the micro light-emitting chip are facilitated.

Description

Light-emitting component, display screen and manufacturing method of light-emitting component
Technical Field
The invention relates to the field of display, in particular to a light-emitting component, a display screen and a manufacturing method of the light-emitting component.
Background
Micro LEDs are sought by various manufacturers due to their advantages of high brightness, wide color gamut coverage, high contrast, etc., and are called next generation display devices, and in recent years, the popularity has continued to rise; there are a number of problems to overcome in the actual production process. For example, for a display panel manufactured by using Micro LED chips, in order to solve the cross color problem between adjacent Micro LED chips, it is currently practiced to manufacture a PR retaining wall between adjacent Micro LED chips by using a Photoresist (PR) material to form a light blocking structure, and the PR retaining wall is used to solve the cross color problem between adjacent Micro LED chips. The current light blocking structure is single, and is not beneficial to the application and development of Micro LEDs.
Therefore, how to solve the problem that the current light blocking structure is single is urgent to solve.
Disclosure of Invention
In view of the foregoing deficiencies of the prior art, the present application provides a light emitting device, a display panel and a method for manufacturing the light emitting device, which aims to solve the problem of a single light blocking structure in the related art.
A light emitting assembly comprising:
a circuit back plate is arranged on the back plate,
the light-emitting units are arranged on the circuit backboard;
the optical isolation unit is arranged on the circuit back plate and positioned between the adjacent light-emitting units;
the optical isolation unit comprises a liquid crystal unit insulated and isolated from the light emitting unit, the liquid crystal unit is electrically connected with the circuit backboard, and a liquid crystal layer included in the liquid crystal unit deflects under the power-on state to prevent light from the light emitting unit from passing through.
In the light emitting assembly, the optical isolation unit arranged between the adjacent light emitting units comprises the liquid crystal unit insulated and isolated from the light emitting units, the liquid crystal unit is electrically connected with the circuit back plate of the light emitting assembly, and the liquid crystal layer included in the liquid crystal unit deflects to prevent light from the light emitting units from passing through in a power-on state, so that crosstalk of the light between the adjacent light emitting units is prevented. The liquid crystal unit arranged between the adjacent light-emitting units can also block the light emitted by the adjacent light-emitting units, so that the light blocking structure between the adjacent light-emitting units is enriched, and the application and development of the micro light-emitting chip are facilitated.
Alternatively, in one embodiment of the present invention, the thickness of the insulating layer, the positive electrode layer, and the negative electrode layer of the optical isolation unit is 1 to 2 micrometers, and the interval between the positive electrode layer and the negative electrode layer of the optical isolation unit is 1 to 6 micrometers; therefore, the whole thickness of the optical isolation unit can be kept between 5 microns and 14 microns, the PR retaining wall thickness (limited by PR material and exposure capability thereof, and more than 15 microns at present) manufactured between adjacent Micro LED chips by using PR material is smaller, the distance between adjacent light-emitting units can be further reduced, and the PPI (Pixel Density) is improved.
Based on the same inventive concept, the present application further provides a display screen, which includes a frame and a display panel fixedly disposed on the frame, wherein the display panel includes the light emitting assembly as described above.
The optical isolation unit is arranged between the adjacent light emitting units on the display panel of the display screen, and the optical isolation unit comprises a liquid crystal unit insulated and isolated from the light emitting units, so that crosstalk of light between the adjacent light emitting units is realized, and a light blocking structure between the adjacent light emitting units is enriched.
Based on the same inventive concept, the present application further provides a method for manufacturing a light emitting assembly, comprising:
a plurality of light-emitting units are arranged on the circuit backboard;
on the circuit backplate, be located adjacently the region formation light isolation unit between the luminescence unit, the formation light isolation unit include with the liquid crystal cell of luminescence unit insulation isolation, the liquid crystal cell with the circuit backplate is connected electrically, the liquid crystal cell is under the on-state, and the liquid crystal layer that it includes deflects to the prevention comes from the light of luminescence unit passes through.
In the light emitting module manufactured by the light emitting module, the optical isolation unit formed between the adjacent light emitting units comprises the liquid crystal unit insulated and isolated from the light emitting units, the liquid crystal unit is electrically connected with the circuit back plate of the light emitting module, and the liquid crystal layer included in the liquid crystal unit deflects when the liquid crystal unit is in a power-on state so as to prevent the light from the light emitting units from passing through, thereby preventing the crosstalk of the light between the adjacent light emitting units. Namely, the manufactured light-emitting component is provided with a new light blocking structure.
Drawings
FIG. 1 is a schematic view of a PR retaining wall currently in use;
FIG. 2 is a first schematic view of a light emitting device according to an embodiment of the present invention;
FIG. 3 is a second schematic view of a light emitting device according to an embodiment of the present invention;
FIG. 4-1 is a schematic view of a first micro-groove on a first side of the negative electrode of FIG. 2;
FIG. 4-2 is a schematic view of a first polarized light molecule disposed in the first micro-groove of FIG. 4-1;
FIG. 5 is a third schematic view of a light-emitting device according to an embodiment of the present invention;
FIG. 6 is a fourth schematic view of a light emitting device according to an embodiment of the present invention;
FIG. 7 is a fifth schematic view of a light emitting device according to an embodiment of the present invention;
FIG. 8 is a sixth schematic view of a light emitting device according to an embodiment of the present invention;
FIG. 9 is a schematic flow chart illustrating a method for fabricating a light emitting device according to an embodiment of the present invention;
FIG. 10 is a schematic flow chart illustrating the formation of an optical isolation unit according to an embodiment of the present invention;
FIG. 11 is a schematic view of a process for fabricating a light emitting device according to an embodiment of the present invention;
description of reference numerals:
10-display back panel, 11-circuit back panel, 20-Micro LED chip, 21-light emitting chip, 30-QD film, 31-light conversion layer, 40-PR retaining wall, 41-insulating layer, 421-negative electrode layer, 4211-first Micro groove, 422-positive electrode layer, 43-liquid crystal layer, 51-first polarized light molecule, 52-first polarized light film layer, 53-second polarized light film layer, 61-heat insulation glue layer, 71-color resistance layer, 72-light shading layer and 81-color film substrate.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are given in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
In the related art, for a display panel manufactured by using Micro LED chips, in order to solve the problem of color crosstalk between adjacent Micro LED chips, a PR material is used to manufacture PR retaining walls between adjacent Micro LED chips to form a light blocking structure in the current practice. For example, referring to the display panel shown in fig. 1, the display panel includes a display backplane 10, a plurality of Micro LED chips 20 disposed on the circuit backplane, a QD (Quantum Dots) film 30 disposed on the Micro LED chips 20, and PR retaining walls 40 disposed between adjacent Micro LED chips 20, wherein the PR retaining walls 40 are used to solve the cross color problem between adjacent Micro LED chips 20; the current light blocking structure is single, and is not beneficial to the application and development of Micro LEDs.
In addition, due to the limitation of PR material and exposure capability, the thickness d1 of the PR retaining wall 40 cannot be made very small, so that the bottom exposure is easy to be insufficient in the process, and the film layer adhesion is insufficient, which is commonly called as undercut phenomenon. Therefore, the thickness d1 of the PR retaining wall 40 is more than 15 microns at present, which results in the PPI of the display panel being less than 300PPI, and greatly limits the development and application of the Micro LED.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
The present embodiment provides a light emitting device, which can be applied to the display field and also can be applied to the illumination field, wherein the light emitting device includes but is not limited to:
a circuit back plate is arranged on the back plate,
the light-emitting units are arranged on the circuit backboard; the number of the light emitting units is greater than or equal to 2, and it should be understood that each light emitting unit is electrically connected with the circuit backplane, and the specific distribution of each light emitting unit on the circuit backplane can be flexibly set according to application requirements. For example, when the display device is applied to the display field, the circuit back plate can be a display back plate, and the plurality of light emitting units can be distributed on the display back plate in a matrix or an array. It should be understood that the circuit backplane in this embodiment may be a flexible circuit backplane according to the application requirement, for example, but not limited to, a flexible circuit board may be used as the circuit backplane, and the flexible circuit board may be made of, but not limited to, mylar or polyimide as a substrate. The circuit back plate in the embodiment can also be a hard back plate made of a glass substrate or a PCB (printed Circuit Board) according to application requirements; that is, in this embodiment, there is no limitation on the material and the flexibility of the circuit backplane. When the circuit back plate is provided with the driving circuit, the driving mode of the driving circuit can be active or passive.
Locate on the circuit backplate to be located the optical isolation unit between the adjacent luminescence unit, this optical isolation unit can prevent that the condition of adjacent luminescence unit light cross color from taking place. The optical isolation unit in this embodiment includes a liquid crystal unit insulated and isolated from the light emitting unit, that is, the liquid crystal unit may be insulated and isolated from the light emitting unit around the liquid crystal unit, the liquid crystal unit is electrically connected to the circuit backplane, the liquid crystal unit includes a liquid crystal layer, and the liquid crystal layer of the liquid crystal unit deflects when the liquid crystal unit is in a power-on state, so as to prevent light from the light emitting unit from passing through the liquid crystal unit; therefore, when it is disposed between the adjacent light emitting units, it is possible to prevent the adjacent light emitting units from being color-cross-colored. It can be seen that the light-blocking structure on the light-emitting assembly provided by the present embodiment is completely different from the currently adopted PR retaining wall structure, and thus the light-blocking structure can be enriched, and the application and development of the light-emitting chip can be facilitated.
It should be understood that in this embodiment, the optical isolation unit may be disposed between only a part of the adjacent light emitting units on the circuit backplane, or may be disposed between all the adjacent light emitting units, as required. And in some examples, when the luminescence unit is at circuit backboard row matrix or array distribution, can set up light isolation unit according to the demand in the region between the adjacent luminescence unit on the row direction, and/or set up light isolation unit in the region between the adjacent luminescence unit on the column direction, specifically can select the setting according to the application demand is nimble.
In this embodiment, the light emitting unit includes a light emitting chip, and the light emitting chip may be a Micro light emitting chip, that is, a light emitting chip with a micron-sized size, and for example, may include but is not limited to at least one of a Micro-LED chip and a Mini LED chip, and may include but is not limited to at least one of a flip LED chip, a normal LED chip, and a vertical LED chip, and may be flexibly selected according to requirements. Of course, in some application scenarios, the micro light-emitting chip can be replaced by a light-emitting chip with a common size. In some application examples of the present embodiment, the light emitting unit may include only the light emitting chip, for example, when applied to illumination. In other application examples of the embodiment, the light emitting unit may further include a light conversion layer disposed above the light emitting surface of the light emitting chip to perform light conversion on the light emitted from the light emitting surface. It should be understood that the light conversion layer in this embodiment may or may not directly cover the light emitting surface of the light emitting chip, for example, a heat insulating layer with light transmittance may be disposed between the light conversion layer and the light emitting chip, or another layer structure with light transmittance may be disposed between the light conversion layer and the light emitting chip, and the layer structure may be a physical layer or an air layer. In this embodiment, the light conversion layer may include, but is not limited to, at least one of a QD layer and a phosphor paste layer.
In addition, in some examples, according to application requirements, the optical isolation unit provided by the embodiment may be further disposed between a part of the adjacent light emitting units, and a PR retaining wall is disposed between a part of the adjacent light emitting units, that is, two light blocking structures are used in combination, so that light blocking modes can be further enriched, the use is more flexible, and application scenes are wider.
In this embodiment, the optical isolation unit disposed between the adjacent light emitting units may specifically include an insulating layer disposed between the liquid crystal unit and the light emitting unit, that is, the liquid crystal unit is isolated from the corresponding adjacent light emitting unit by the insulating layer, and it should be understood that the material and the forming process of the insulating layer may be flexibly selected, for example, the material may be selected from but not limited to organic PLN type organic material or organic silicon insulating material, and the forming process may be selected from but not limited to spraying, coating, and the like. It should be understood that, in some examples, the insulating layer may be replaced by an air layer, that is, the liquid crystal cell and the corresponding adjacent light emitting cell are isolated by a reserved gap, and the gap forms an air layer for insulating the two cells.
In one example of the present embodiment, the liquid crystal cell provided between adjacent light emitting cells further includes an electrode layer and a polarizing layer, wherein:
the electrode layer is attached to the insulating layer and electrically connected with the circuit backboard, and the polarized light layer is positioned between the electrode layer and the liquid crystal layer; after the electrode layer is electrified, the lateral light emitted from the side surface of the light-emitting unit forms polarized light by utilizing the polarization effect of the polarized light layer, so that the liquid crystal layer is deflected, and the lateral light emitted from the side surface of the light-emitting unit cannot allow the light to pass through. In this embodiment, the front surface of the light emitting unit is a surface far away from the circuit backplane, and the side surfaces of the light emitting unit are surfaces surrounding the front surface of the light emitting unit.
In this embodiment, the polarized light layer of the liquid crystal cell can be flexibly arranged according to the requirement, for example, in an application example, the electrode layers of the liquid crystal cell are arranged by mutually insulating a positive electrode layer and a negative electrode layer;
the polarized light layer comprises at least one of a first polarized light molecular layer and a second polarized light molecular layer, wherein the first polarized light molecular layer is arranged on the negative electrode layer, and the second polarized light molecular layer is arranged on the positive electrode layer. For example, in an application scenario, a surface of the negative electrode layer facing the liquid crystal layer is a first side surface, the first side surface is provided with a plurality of first micro grooves, and a plurality of first polarized light molecules included in the first polarized light molecule layer are distributed in the first micro grooves. In another application scenario, a surface of the positive electrode layer facing the liquid crystal layer is a second side surface, the second side surface is provided with a plurality of second micro grooves, and a plurality of second polarized light molecules included in the second polarized light molecule layer are distributed in the second micro grooves. That is, in the present application example, the negative electrode layer and the positive electrode layer can function as carriers of the first polarized light molecule and the second polarized light molecule, respectively.
It should be understood that at least one of the material and the size of the first polarized light molecule and the second polarized light molecule in this application example may be the same or different. For example, at least one of the first polarized light molecule and the second polarized light molecule may be selected from, but not limited to, iodine molecules or dye molecules having a linear polarization. To facilitate understanding, the present embodiments are described below in connection with several examples of the drawings.
Referring to fig. 2, an exemplary light emitting assembly includes a circuit board 11, a plurality of light emitting units disposed on the circuit board 11, wherein the light emitting units include, but are not limited to, light emitting chips 21, and a light conversion layer 31 disposed on a light emitting surface of the light emitting chips 21 (in fig. 2, the light conversion layer 31 is directly on the light emitting surface of the light emitting chips 21), and the light conversion layer 31 in this example is a QD layer. In fig. 2, the optical isolation unit includes two insulating layers 41 respectively disposed on opposite sides of adjacent light emitting units, a negative electrode layer 421 and a positive electrode layer 422 respectively attached to the two insulating layers 41, the negative electrode layer 421 and the positive electrode layer 422 are insulated and isolated from each other, a first polarized light molecule layer formed on the negative electrode layer 421, and/or a second polarized light molecule layer formed on the positive electrode layer 422, and a liquid crystal layer 43 filled between the negative electrode layer 421 and the positive electrode layer 422.
In the example shown in fig. 2, the negative electrode layer 421 and the positive electrode layer 422 are respectively connected to corresponding circuits on the circuit backplane 11 through via holes provided on the circuit backplane 11. Of course, in some examples, a pad may also be reserved on the circuit backplane 11 on the surface between the adjacent light emitting chips 21, and the negative electrode layer 421 and the positive electrode layer 422 may be directly formed on or connected to the respective corresponding pads through wires.
In one application scenario, at least one of the two insulating layers 41 shown in fig. 2 may be replaced by an air layer, for example, as shown in fig. 3, with a gap reserved between both the negative electrode layer 421 and the positive electrode layer 422 and the light-emitting unit, which gap forms an air layer to insulate the liquid crystal unit from the light-emitting unit.
In one application scenario, assuming that a first polarized photo molecule layer is formed on the negative electrode layer 421, as shown in fig. 4-1 and 4-2, fig. 3 is an enlarged view of the negative electrode layer 421 in fig. 2 after being rotated 90 ° counterclockwise, and then being turned to face the liquid crystal layer with the first side facing upward. Referring to fig. 4-1, a plurality of first micro grooves 4211 are formed on a first side of the negative electrode layer 421, and the shape of the first micro grooves 4211 is not limited, and may be regular, such as triangular, rectangular, arc, etc., or irregular. Referring to fig. 4-2, the first polarized light molecule layer includes first polarized light molecules 51 distributed in each of the first micro grooves 4211. When it is desired to form a second polarized photo molecule layer on the positive electrode layer 422, a structure similar to that of fig. 4-1 and 4-2 may also be employed, and will not be described in detail.
In the light emitting module shown in fig. 2 and 3, an optical isolation unit is provided between each adjacent light emitting unit, but it should be understood that an optical isolation unit may be selectively provided between only a part of the adjacent light emitting units.
In the light emitting device shown in fig. 2 and 3, the light conversion layer 31 is directly disposed on the light emitting surface of the light emitting chip 21, but in some examples, the light conversion layer 31 may not be directly disposed on the light emitting surface, for example, as shown in fig. 5, a transparent heat insulation glue layer 61 is further disposed between the light conversion layer 31 and the light emitting surface of the light emitting chip 21, and the heat conduction performance of the heat insulation glue layer 61 may be set as the light conversion layer 31, so as to prevent a large amount of heat generated by the light emitting chip 21 from being transferred to the corresponding light conversion layer 31 to affect the light conversion efficiency of the light conversion layer 31. The thermal insulation glue layer 61 in this embodiment may be, but is not limited to, a transparent glue layer or a translucent glue layer.
In some examples of this embodiment, the light emitting assembly may further include a color resistance layer (also referred to as a filter) disposed over the light conversion layer, for example, as shown in fig. 6. The light emitting assembly can further include a color filter for further filtering the light of a certain color converted by the corresponding light conversion layer 31, so that the purity of the light of the color is higher, the color saturation is better, the color resistance layers 71 with the color display effect are improved, and the color resistance layers 71 are respectively arranged on the corresponding light conversion layers 31. The specific type of the color resist layer 71 in this example can be set according to the type of the light conversion layer 31. For ease of understanding, an application scenario is described below as an example.
In this application scenario, the light emitting chip 21 of the circuit backplane 11 is a blue light Micro-LED chip, and the light conversion layer 31 is implemented by a quantum dot color film, which includes a red quantum dot color film, a green quantum dot color film and a transparent resin color film, wherein a quantum dot in the red quantum dot color film can convert blue light emitted by the blue light Micro-LED chip into red light, a quantum dot in the green quantum dot color film can convert blue light emitted by the blue Micro-LED chip into green light, and the transparent resin color film is filled with scattering particles, so that blue light emitted by the blue light Micro-LED chip can be transmitted, thereby implementing color display. Correspondingly, the color resistance layer 71 comprises a red color resistance layer, a green color resistance layer element and a blue color resistance layer, and the red color resistance layer corresponds to the red quantum dot color film; the green color resistance layer corresponds to the green quantum dot color film; the blue color resistance layer corresponds to the transparent resin color film; the setting of colour hinders the layer, can further carry out the colour to the light of certain colour that the various membrane of quantum dot that corresponds each other converts out and filter to make the light purity of this colour higher, the color saturation is also better.
In this application example, referring to fig. 6, a first light shielding layer 72 may be further disposed between each color resist layer 71, wherein the light shielding layer 72 may be made of a non-light-transmissive adhesive material, so as to avoid light interference between adjacent color resist layers 71, and further improve the display effect. Of course, in some application examples, the light-shielding layer 72 may also be made of a light-permeable adhesive material with relatively poor light transmittance, which is not described herein again.
The light emitting devices shown in the above figures all include only the circuit back plate 11, that is, the light emitting devices shown in the above figures are single-substrate light emitting devices. However, the light emitting device provided by the present embodiment is also applicable to dual elements. For example, referring to fig. 7, an application example further includes a color filter substrate 81, wherein the color resist layer 71, the light shielding layer 72, and the light conversion layer 31 can be carried on the color filter substrate 81. The color filter substrate 81 in this application example has light transmittance, and of course, an encapsulation adhesive layer having light transmittance may be used for equivalent replacement. It should be understood that the material of the color filter substrate 81 in this example can be flexibly selected, and for example, but not limited to, a glass substrate, a resin substrate, a plastic substrate, and the like can be selected.
In another example of this embodiment, the polarizing layer of the liquid crystal cell may also adopt a structure as follows:
the polarizing layer includes at least one of a first polarizing film layer and a second polarizing film layer, wherein: the first polarized light film layer comprises a first polarized light film and a third polarized light molecule arranged on the first polarized light film, and the first polarized light film is attached to the first side surface of the negative electrode layer facing the liquid crystal layer;
the second polarized light film layer comprises a second polarized light film and a fourth polarized light molecule arranged on the second polarized light film, and the second polarized light film is attached to the second side surface of the positive electrode layer facing the liquid crystal layer.
For example, an application example is shown in fig. 8, which is different from the light emitting element shown in fig. 2 in that the liquid crystal cell includes a first polarized light film layer 52 attached to the first side of the negative electrode layer 421 and a second polarized light film layer 53 attached to the second side of the positive electrode layer 422, respectively. Of course, only one of the first polarizing film layer 52 and the second polarizing film layer 53 may be provided according to the requirement. In an embodiment, the first polarizing film layer 52 may include a first polarizing film that is a conductive film with light transmittance, and the third polarizing film may be distributed on the surface (but not limited to the structure shown in fig. 4-1 to 4-2) and/or inside the first polarizing film, and the third polarizing film may be the same as the first polarizing film in the above example. Similarly, the second polarizing film included in the second polarizing film layer 53 may be a conductive film material having light transmittance, and the fourth polarizing molecules may be distributed on the surface and/or inside of the second polarizing film, and may also be the same as the first polarizing molecules in the above examples. The second polarizing film and the first polarizing film in this embodiment may be the same or different.
In this embodiment, in order to increase the PPI and reduce the spacing between adjacent light emitting cells, the size of each layer in the optical isolation unit may be set according to the specific application requirement, for example, in one application scenario, the insulating layer, the positive electrode layer, and the negative electrode layer of the optical isolation unit may be set to have a thickness of 1 to 2 micrometers, a spacing between the positive electrode layer and the negative electrode layer of 1 to 6 micrometers, the spacing may determine the thickness of the liquid crystal layer, so that the total thickness of the optical isolation unit (see d2 in fig. 2) may be controlled to be between 5 microns and 14 microns, and the spacing between adjacent light emitting units may be further reduced to increase the pixel density of PPI (Pixels Per inc) compared to the thickness of PR barriers (limited by PR material and its exposure capability, currently above 15 microns) fabricated between adjacent Micro LED chips using PR material. And the PPI can reach more than 500PPI according to requirements. Of course, when the light emitting assembly includes at least one of the first polarized light film 52 and the second polarized light film 53 shown in fig. 8, the size thereof can be set similarly according to the requirement, and the description thereof is omitted.
For ease of understanding, the present embodiment will be described below with reference to a method of manufacturing the light emitting element shown in each of the above examples as an example. As shown with reference to fig. 9, including but not limited to:
s901: a plurality of light-emitting units are arranged on the circuit backboard.
In some examples of the present embodiments, several light emitting units may be disposed on the circuit backplane by, but not limited to, various chip bulk transfer techniques. And will not be described in detail herein.
S902: and an optical isolation unit is formed in the area between the adjacent light emitting units on the circuit backboard.
The optical isolation unit formed in the step comprises a liquid crystal unit insulated and isolated from the light emitting unit, the liquid crystal unit is electrically connected with the circuit backboard, the liquid crystal unit comprises a liquid crystal layer, and the liquid crystal layer of the liquid crystal unit deflects under the power-on state to prevent light from the light emitting unit from passing through.
In one example, the process of forming the optical isolation unit on the circuit backplane in S902 in the region between the adjacent light emitting units is shown in fig. 10, which may include but is not limited to:
s1001: on opposite side surfaces of adjacent light emitting cells, a first insulating layer and a second insulating layer are formed, respectively.
In some application examples, the step S1001 may be omitted, and the first insulating layer and the second insulating layer may be replaced by the voids in each of the above examples.
S1002: and forming a positive electrode layer and a negative electrode layer which are insulated and separated from each other on two opposite sides of the first insulating layer and the second insulating layer respectively.
In this embodiment, the process of forming the positive electrode layer and the negative electrode layer, and the material of the positive electrode layer and the negative electrode layer may be flexibly selected, which is not limited in this embodiment.
S1003: a polarizing layer is formed on at least one of opposite sides of the positive electrode layer and the negative electrode layer.
For example, in one example, a number of first micro grooves in which first polarized light molecules are arranged may be formed on a first side of the negative electrode layer opposite to the positive electrode layer; and/or a plurality of second micro grooves are formed on a second side surface of the positive electrode layer opposite to the negative electrode layer, and second polarized light molecules are arranged in the second micro grooves;
for another example, in another example, a first polarizing film is formed on a first side of the negative electrode layer opposite to the positive electrode layer, the first polarizing film being provided with a first polarized light molecule thereon; and/or a second polarized film is formed on a second side surface of the positive electrode layer opposite to the negative electrode layer, and a second polarized light molecule is arranged on the second polarized film.
S1004: and then filling liquid crystal between the positive electrode layer and the negative electrode layer to form a liquid crystal layer.
For ease of understanding, the following description will be made by taking as an example a process of fabricating the light emitting assembly shown in fig. 2, which is shown in fig. 11, and includes but is not limited to:
s1101: a number of light emitting chips 21 and corresponding light conversion layers 31 are provided on the circuit backplane 11.
In this example, the circuit backplane 11 is assumed to be a display backplane. The light emitting chip 21 is a Micro-LED chip, and the light conversion layer 31 is a QD film.
S1102: on opposite side surfaces of adjacent light emitting cells, a first insulating layer and a second insulating layer are formed, respectively.
Referring to fig. 11, insulating layers 41 are provided on opposite side surfaces of each adjacent light emitting cell, respectively, and the insulating layers 41 on the side surfaces constitute a first insulating layer and a second insulating layer. And the insulating layer covers both the light emitting chip 21 and the side surface of the light conversion layer 31.
In an example, the insulating layer 41 may be formed by, but not limited to, an organic PLN type organic material or an organic silicon insulating material, the insulating layer 41 may be formed by spraying or coating, and the thickness of the insulating layer 41 may be controlled to be 1 to 2 μm.
S1103: the negative electrode layer 421 and the positive electrode layer 422 are formed on the first insulating layer and the second insulating layer, respectively.
For example, in one example, the negative electrode layer 421 and the positive electrode layer 422 may be prepared on the first insulating layer and the second insulating layer, respectively, using a silver paste process or a spray coating process, and the thickness of the prepared negative electrode layer 421 and positive electrode layer 422 is controlled to be 1 to 2 micrometers.
S1104: first micro grooves 4211 and second micro grooves are formed on the first side of the negative electrode layer 421 and the second side of the positive electrode layer 422, respectively.
As described above, the micro-groove structure may be formed only on one of the negative electrode layer 421 and the positive electrode layer 422, and will not be described herein.
In some examples, the first micro grooves 4211 and the second micro grooves may be formed on the first side of the negative electrode layer 421 and the second side of the positive electrode layer 422 by, but not limited to, using a Mask patterning process.
S1105: the first polarizing molecules 51 and the second polarizing molecules are disposed at the first micro grooves 4211 of the negative electrode layer 421 and the second micro grooves of the positive electrode layer 422, respectively.
In this example, the first and second polarizing molecules 51 and 51 may be disposed in the first and second micro grooves 4211 and 4211, respectively, by a coating process, wherein the micro groove structure may realize the alignment of the polarizing molecules. The first polarizing molecule 51 and the second polarizing molecule in this example are iodine molecules or dye molecules.
S1106: liquid crystal is filled between the negative electrode layer 421 and the positive electrode layer 422 to form the liquid crystal layer 43.
In this embodiment, when the light emitting assembly shown in fig. 8 is manufactured, only the first polarized light film layer and the second polarized light film layer need to be manufactured by replacing the layers in steps S1104 and S1105 shown in fig. 11, and details are not repeated herein.
When the light-emitting component manufactured by the manufacturing method shown in fig. 11 is normally lighted, the positive electrode layer and the negative electrode layer which are arranged on two sides of the liquid crystal layer are electrified, the lateral light of the Micro-LED chip forms polarized light by utilizing the polarization effect of iodine molecules or dye molecules, the liquid crystal layer deflects, and the lateral light of the QD film and the Micro-LED chip cannot be allowed to pass through, so that the ingenious light blocking design is realized, the PPI (reaching more than 500 PPI) of a product can be greatly improved, and the application field of the quantum dot technology is greatly expanded.
The embodiment also provides a display screen, which comprises a frame and a display panel; the display panel is fixed on the frame; the display panel comprises the light emitting assembly, wherein the distance between the adjacent light emitting units in the light emitting assembly can be smaller, so that the PPI of the display screen is higher, and the display effect of the display screen can be improved. The display screen can be applied to but not limited to various intelligent mobile terminals, vehicle-mounted terminals, wearable equipment, PCs, displays, electronic billboards and the like.
The embodiment also provides a spliced display screen, which is formed by splicing at least two display screens shown above, and the PPI of a single display screen is higher, so that the PPI of the spliced display screen can be further ensured, and the visual effect is improved.
It is to be understood that the invention is not limited to the examples described above, but that modifications and variations may be effected thereto by those of ordinary skill in the art in light of the foregoing description, and that all such modifications and variations are intended to be within the scope of the invention as defined by the appended claims.

Claims (10)

1. A light emitting assembly, comprising:
a circuit back plate is arranged on the back plate,
the light-emitting units are arranged on the circuit backboard;
the optical isolation unit is arranged on the circuit back plate and positioned between the adjacent light-emitting units;
the optical isolation unit comprises a liquid crystal unit insulated and isolated from the light emitting unit, the liquid crystal unit is electrically connected with the circuit backboard, and a liquid crystal layer included in the liquid crystal unit deflects under the power-on state to prevent light from the light emitting unit from passing through.
2. The lighting assembly of claim 1, wherein the optical isolation unit further comprises an insulating layer between the liquid crystal cell and the lighting unit, the liquid crystal cell further comprising an electrode layer and a polarizing layer;
the electrode layer is attached to the insulating layer and electrically connected with the circuit backboard, and the polarized light layer is located between the electrode layer and the liquid crystal layer.
3. A light-emitting assembly according to claim 2, wherein the electrode layers include a positive electrode layer and a negative electrode layer provided insulated from each other;
the polarizing layer includes at least one of a first polarizing photo-molecular layer and a second polarizing photo-molecular layer;
the first polarized light molecule layer comprises a plurality of first polarized light molecules, the first polarized light molecules are distributed in a plurality of first micro grooves on a first side surface of the negative electrode layer, and the first side surface is the surface of the negative electrode layer facing the liquid crystal layer;
the second polarized light molecule layer comprises a plurality of second polarized light molecules, the second polarized light molecules are distributed in a plurality of second micro grooves on a second side surface of the positive electrode layer, and the second side surface is the surface of the positive electrode layer facing the liquid crystal layer;
or the like, or, alternatively,
the polarizing layer includes at least one of a first polarizing film layer and a second polarizing film layer;
the first polarized light film layer comprises a first polarized light film and a third polarized light molecule arranged on the first polarized light film, and the first polarized light film is attached to the first side surface, facing the liquid crystal layer, of the negative electrode layer;
the second polarized light film layer comprises a second polarized light film and a fourth polarized light molecule arranged on the second polarized light film, and the second polarized light film is attached to the second side surface, facing the liquid crystal layer, of the positive electrode layer.
4. The light emitting assembly according to claim 3, wherein the insulating layer, the positive electrode layer, and the negative electrode layer have a thickness of 1 to 2 micrometers, and a distance between the positive electrode layer and the negative electrode layer is 1 to 6 micrometers.
5. The light-emitting assembly according to any one of claims 1 to 4, wherein the light-emitting unit comprises a micro light-emitting chip, and a light-converting layer disposed over a light-emitting surface of the micro light-emitting chip.
6. A light-emitting assembly according to claim 3 or 4, wherein the first, second, third and fourth polarized light molecules are iodine molecules or dye molecules having a linear polarizing effect.
7. A display screen comprising a frame and a display panel secured to the frame, the display panel comprising the light emitting assembly of any one of claims 1-6.
8. A method of fabricating a light emitting device, comprising:
a plurality of light-emitting units are arranged on the circuit backboard;
on the circuit backplate, be located adjacently the region formation light isolation unit between the luminescence unit, the formation light isolation unit include with the liquid crystal cell of luminescence unit insulation isolation, the liquid crystal cell with the circuit backplate is connected electrically, the liquid crystal cell is under the on-state, and the liquid crystal layer that it includes deflects to the prevention comes from the light of luminescence unit passes through.
9. The method of claim 8, wherein forming an optical isolation unit on the circuit backplane in the area between adjacent light emitting units comprises:
forming a first insulating layer and a second insulating layer on two opposite sides of the adjacent light emitting units, respectively;
forming a positive electrode layer and a negative electrode layer which are insulated and separated from each other on two opposite sides of the first insulating layer and the second insulating layer respectively;
forming a polarizing layer on at least one of opposite sides of the positive electrode layer and the negative electrode layer;
and filling liquid crystal between the positive electrode layer and the negative electrode layer to form the liquid crystal layer.
10. The method of manufacturing a light emitting module according to claim 9, wherein the forming of a polarizing layer on at least one of opposite sides of the positive electrode layer and the negative electrode layer comprises:
forming a plurality of first micro grooves on a first side surface of the negative electrode layer opposite to the positive electrode layer, and arranging first polarized light molecules in the plurality of first micro grooves; and/or a plurality of second micro grooves are formed on a second side surface of the positive electrode layer opposite to the negative electrode layer, and second polarized light molecules are arranged in the second micro grooves;
or the like, or, alternatively,
forming a first polarized film on a first side surface of the negative electrode layer opposite to the positive electrode layer, the first polarized film being provided with a first polarized light molecule; and/or forming a second polarized film on a second side surface of the positive electrode layer opposite to the negative electrode layer, wherein a second polarized light molecule is arranged on the second polarized film.
CN202110666576.1A 2021-06-16 2021-06-16 Light-emitting component, display screen and manufacturing method of light-emitting component Pending CN114019713A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110666576.1A CN114019713A (en) 2021-06-16 2021-06-16 Light-emitting component, display screen and manufacturing method of light-emitting component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110666576.1A CN114019713A (en) 2021-06-16 2021-06-16 Light-emitting component, display screen and manufacturing method of light-emitting component

Publications (1)

Publication Number Publication Date
CN114019713A true CN114019713A (en) 2022-02-08

Family

ID=80054270

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110666576.1A Pending CN114019713A (en) 2021-06-16 2021-06-16 Light-emitting component, display screen and manufacturing method of light-emitting component

Country Status (1)

Country Link
CN (1) CN114019713A (en)

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07270765A (en) * 1994-03-31 1995-10-20 Toppan Printing Co Ltd Liquid crystal display device
TWI258184B (en) * 2001-04-19 2006-07-11 Sony Corp Device transfer method, and device array method and image display unit production method using the same
KR20080020309A (en) * 2006-08-31 2008-03-05 삼성전자주식회사 Liquid crystal display pannel and mehtod for manufacturing the same
CN204807880U (en) * 2015-06-02 2015-11-25 深圳超多维光电子有限公司 Liquid crystal lens and stereoscopic display device
CN107331763A (en) * 2017-08-14 2017-11-07 天津中环电子照明科技有限公司 Quantum dot LED packagings and light fixture
CN108828825A (en) * 2018-07-24 2018-11-16 深圳市华星光电技术有限公司 Side entrance back module and liquid crystal display device
CN208157412U (en) * 2018-05-09 2018-11-27 信利光电股份有限公司 The ultra-thin AMOLED display device of on-cell type
CN109116631A (en) * 2018-09-30 2019-01-01 厦门天马微电子有限公司 Backlight module, liquid crystal display die set and electronic equipment
CN109256452A (en) * 2018-11-19 2019-01-22 合肥惠科金扬科技有限公司 The production method and LED component of LED component
CN109782464A (en) * 2019-03-29 2019-05-21 云谷(固安)科技有限公司 Light path control structure, display panel and display device
CN110854256A (en) * 2019-11-27 2020-02-28 云谷(固安)科技有限公司 Display panel and display device
CN111029481A (en) * 2019-12-12 2020-04-17 京东方科技集团股份有限公司 Display panel, control method thereof and display device
CN212031895U (en) * 2018-09-13 2020-11-27 信利光电股份有限公司 Liquid crystal display and touch liquid crystal module
CN112310143A (en) * 2020-11-02 2021-02-02 广东省科学院半导体研究所 Quantum dot micro LED display device and preparation method thereof
CN212625583U (en) * 2020-07-30 2021-02-26 重庆康佳光电技术研究院有限公司 Display panel and display
CN112596304A (en) * 2020-12-30 2021-04-02 京东方科技集团股份有限公司 Backlight module of display device and display device
CN212934651U (en) * 2020-09-07 2021-04-09 东莞市中麒光电技术有限公司 Quantum dot LED display device
CN112885823A (en) * 2021-01-18 2021-06-01 深圳市华星光电半导体显示技术有限公司 Display panel, preparation method thereof and display device

Patent Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07270765A (en) * 1994-03-31 1995-10-20 Toppan Printing Co Ltd Liquid crystal display device
TWI258184B (en) * 2001-04-19 2006-07-11 Sony Corp Device transfer method, and device array method and image display unit production method using the same
KR20080020309A (en) * 2006-08-31 2008-03-05 삼성전자주식회사 Liquid crystal display pannel and mehtod for manufacturing the same
CN204807880U (en) * 2015-06-02 2015-11-25 深圳超多维光电子有限公司 Liquid crystal lens and stereoscopic display device
CN107331763A (en) * 2017-08-14 2017-11-07 天津中环电子照明科技有限公司 Quantum dot LED packagings and light fixture
CN208157412U (en) * 2018-05-09 2018-11-27 信利光电股份有限公司 The ultra-thin AMOLED display device of on-cell type
CN108828825A (en) * 2018-07-24 2018-11-16 深圳市华星光电技术有限公司 Side entrance back module and liquid crystal display device
CN212031895U (en) * 2018-09-13 2020-11-27 信利光电股份有限公司 Liquid crystal display and touch liquid crystal module
CN109116631A (en) * 2018-09-30 2019-01-01 厦门天马微电子有限公司 Backlight module, liquid crystal display die set and electronic equipment
CN109256452A (en) * 2018-11-19 2019-01-22 合肥惠科金扬科技有限公司 The production method and LED component of LED component
CN109782464A (en) * 2019-03-29 2019-05-21 云谷(固安)科技有限公司 Light path control structure, display panel and display device
CN110854256A (en) * 2019-11-27 2020-02-28 云谷(固安)科技有限公司 Display panel and display device
CN111029481A (en) * 2019-12-12 2020-04-17 京东方科技集团股份有限公司 Display panel, control method thereof and display device
CN212625583U (en) * 2020-07-30 2021-02-26 重庆康佳光电技术研究院有限公司 Display panel and display
CN212934651U (en) * 2020-09-07 2021-04-09 东莞市中麒光电技术有限公司 Quantum dot LED display device
CN112310143A (en) * 2020-11-02 2021-02-02 广东省科学院半导体研究所 Quantum dot micro LED display device and preparation method thereof
CN112596304A (en) * 2020-12-30 2021-04-02 京东方科技集团股份有限公司 Backlight module of display device and display device
CN112885823A (en) * 2021-01-18 2021-06-01 深圳市华星光电半导体显示技术有限公司 Display panel, preparation method thereof and display device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
张彤等, vol. 2, 南京:东南大学出版社, pages: 202 - 203 *

Similar Documents

Publication Publication Date Title
CN112241088B (en) Miniature light-emitting diode lamp panel, backlight module and preparation method thereof
CN108933153A (en) Display panel and preparation method thereof, display device
WO2020019421A1 (en) Led backlight device and led display device
JP5378124B2 (en) Electrode structure to support self-alignment of liquid deposition of materials
CN205016212U (en) Glass LED display element and intelligent full -color glass display screen
US20230236453A1 (en) Color filter substrate, display panel, and display device
WO2021243766A1 (en) Color film substrate and display panel
CN111261656A (en) Display panel and preparation method thereof
US20210366881A1 (en) Array substrate, method of manufacturing the same, and display device
CN105304016B (en) Intelligent full-color glass display screen
CN106292077A (en) Liquid crystal display
CN212276178U (en) Color film substrate, display panel and display device
WO2024000960A1 (en) Connecting film and display module
CN114019713A (en) Light-emitting component, display screen and manufacturing method of light-emitting component
CN215298729U (en) LED display module and electronic equipment comprising same
CN112133244B (en) Drive chip pin embedded LED display screen based on thin film circuit
CN111048655B (en) Light emitting diode chip, display panel, preparation method of light emitting diode chip and display device
CN113948620A (en) Integrated micro LED chip and manufacturing method thereof
CN112015004A (en) Display device and electronic apparatus
CN110568677B (en) Display panel, preparation method thereof and display device
CN217881555U (en) Mini LED insulation resistance welding structure
CN114995002B (en) Peep-proof display panel, preparation method and display device
CN220672603U (en) MiniLED lamp panel and display device
CN220154769U (en) Electrochromic transparent display screen
CN113346002B (en) Display panel

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination